WO2019184694A1 - 基板边缘处理方法、掩膜版 - Google Patents

基板边缘处理方法、掩膜版 Download PDF

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Publication number
WO2019184694A1
WO2019184694A1 PCT/CN2019/077717 CN2019077717W WO2019184694A1 WO 2019184694 A1 WO2019184694 A1 WO 2019184694A1 CN 2019077717 W CN2019077717 W CN 2019077717W WO 2019184694 A1 WO2019184694 A1 WO 2019184694A1
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Prior art keywords
substrate
mask
processed
processing method
edge processing
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PCT/CN2019/077717
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English (en)
French (fr)
Inventor
王威
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武汉华星光电技术有限公司
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Publication of WO2019184694A1 publication Critical patent/WO2019184694A1/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1316—Methods for cleaning the liquid crystal cells, or components thereof, during manufacture: Materials therefor

Definitions

  • the present application relates to the field of display, and in particular, to a substrate edge processing method and a mask.
  • the edge process of the conventional TFT array includes an edge exposure process.
  • the edge exposure process removes residues such as photoresist or metal layers around the substrate to avoid subsequent process contamination.
  • the edge exposure machine is not limited by the simple process, and the exposure accuracy is not high.
  • the present application provides a substrate edge processing method and a mask plate to solve the technical problem that the edge exposure accuracy of the prior substrate is not high.
  • the present application provides a substrate edge processing method, which includes the steps of:
  • the developed substrate to be processed is subjected to an etching process by using a third device.
  • the method further comprises the steps of:
  • Marking is performed on the mask using an alignment system.
  • the mask includes at least four of the indicia.
  • the mask includes a light transmitting region and a light blocking region
  • the area of the light shielding region is smaller than the area of the first photoresist layer.
  • the light shielding area is a regular rectangle.
  • a distance between a boundary of each of the light shielding regions and a boundary of each of the first photoresist regions is 9.5 mm to 10.5 mm.
  • the present application also proposes a mask in which the mask is applied to the substrate edge processing method described above.
  • the mask includes a light transmitting region and a light blocking region
  • the area of the light shielding area is smaller than the area of the first photoresist layer on the substrate to be processed.
  • the light shielding area is a regular rectangle
  • a distance between a boundary of each of the light shielding regions and a boundary of each of the first photoresist regions is 9.5 mm to 10.5 mm.
  • the present application also provides a substrate edge processing method, which includes:
  • Edge processing is performed on the substrate to be processed by using a second device.
  • the method further comprises the steps of:
  • Marking is performed on the mask using an alignment system.
  • the mask includes at least four of the indicia.
  • the mask includes a light transmissive area and a light blocking area, and an area of the light shielding area is smaller than an area of the first photoresist layer.
  • the light shielding area is a regular rectangle.
  • a distance between a boundary of each of the light shielding regions and a boundary of each of the first photoresist regions is 9.5 mm to 10.5 mm.
  • the application improves the edge cleaning precision of the substrate to be processed by using an exposure machine to perform an edge exposure process on a substrate to be processed in a mask process; the application also saves the use of the edger and saves the cost of the machine. Reduce process time and improve process efficiency.
  • FIG. 1 is a schematic diagram of steps of a method for processing an edge of a substrate of the present application
  • FIG. 2 is a layout view of a mask of the present application and a substrate to be processed
  • Figure 3 is a structural view of a mask of the present application.
  • FIG. 1 is a schematic diagram of steps of a method for processing an edge of a substrate of the present application.
  • FIG. 2 is a view showing the position of the mask and the substrate to be processed of the present application.
  • the substrate edge processing method includes:
  • the substrate to be processed 102 provided in this step is a substrate after passing through a mask process.
  • the reticle process may be to complete the fabrication of a film layer such as a gate layer, a source drain, or other metal layer.
  • Residues such as photoresist or metal layer may remain on the periphery of the substrate after the photomask process is completed, and subsequent process contamination is not avoided, so subsequent edge washing treatment is required.
  • the present application mainly performs edge processing on the substrate to be processed 102 by using an exposure machine.
  • the exposure machine mainly uses the ultraviolet light of the UVA wavelength to transmit the image information on the film or other transparent body to the machine equipment on the surface coated with the photosensitive material.
  • the substrate to be processed 102 needs to be coated with a first photoresist in the first device to form a first photoresist layer.
  • the first device is a photoresist coater.
  • the traditional edge-washing method uses an edger to wash the substrate.
  • the traditional edger does not use a mask, and the substrate 102 to be processed is directly processed by the existing tooling.
  • the accuracy of the traditional edger can only reach about 0.5mm, and the precision of the edge exposure process using the exposure machine can reach the micron level.
  • the present application adds a mask 101 to the exposure machine.
  • the mask 101 performs edge exposure processing only on the substrate 102 to be processed.
  • the exposure machine (not shown) is mainly composed of an illumination system, an alignment system, a mask stage, a glass substrate stage, and an optical system. This step is mainly to use the alignment system in the exposure machine to align the mask 101 with the mask 103;
  • the mask includes a light transmissive region 106 and a light blocking region 104.
  • the light transmissive region 106 of the reticle 101 includes at least four of the indicia 103. In order to ensure a more precise alignment of the mask 101, the light transmissive region 106 of the mask 101 includes 21 of the marks 103.
  • This step is mainly performed in the exposure machine.
  • the first photoresist layer on the substrate to be processed 102 is edge-exposed by the mask 101.
  • the area of the light shielding region 104 in the mask 101 is smaller than the area of the first photoresist layer coated on the substrate 102 to be processed.
  • the light-shielding region to the peripheral region 105 of the substrate to be processed 102 is the region that needs to be processed in this step.
  • the reticle 101 and the opaque regions of the reticle 101 are all of a regular shape, such as a rectangle or a square.
  • the distance between each boundary of the light-shielding region and each boundary of the first photoresist layer is 10 ⁇ 0.5 mm, that is, the approximate range is 9.5 mm to 10.5 mm.
  • Step S50 performing a trimming process on the substrate to be processed by using a second device
  • This step is mainly for performing subsequent development and etching processes on the exposed substrate 102 to be processed.
  • the first photoresist layer on the substrate to be processed 102 is developed by a second device.
  • the first photoresist that has passed through the exposed portion is typically cleaned off with a developer leaving only the unexposed first photoresist.
  • the already dissolved first photoresist is then washed away with deionized water.
  • the substrate to be processed 102 is heated and baked, so that the unexposed first photoresist is more firmly attached to the substrate to be processed 102.
  • the step further includes processing the developed substrate 102 to be processed by the third device.
  • the third device may be an etch machine or the like.
  • the film structure not covered by the first photoresist is removed by an etching process or other edge washing process, the edge processing of the substrate 102 to be processed is completed, and the substrate 102 to be processed is transported to the next process.
  • the application improves the edge cleaning precision of the substrate to be processed by using an exposure machine to perform an edge exposure process on a substrate to be processed in a mask process; the application also saves the use of the edger and saves the cost of the machine. Reduce process time and improve process efficiency.
  • FIG. 3 is a structural diagram of a mask of the present application.
  • the mask 201 is applied to the edge processing method of the substrate 102 to be processed in the above embodiment.
  • the mask 201 includes a light transmissive region 206 and a light blocking region 204.
  • the area of the light shielding region 204 is smaller than the area of the first photoresist layer on the substrate 202 to be processed.
  • the light-shielding region to the peripheral region 205 of the substrate to be processed 202 is a region where the substrate to be processed 202 needs to be processed.
  • the mask 201 and the light shielding region 204 of the mask 201 are all regular shapes, such as a rectangle or a square.
  • the distance between each boundary of the light-shielding region 204 and each boundary of the first photoresist layer is 10 ⁇ 0.5 mm, that is, the approximate range is 9.5 mm to 10.5 mm.
  • the present application provides a method for masking a substrate edge, the mask edge method comprising: forming a first photoresist layer on a substrate to be processed by using a first device; and secondly, using a mask plate in the exposure machine A photoresist layer is exposed; finally, the substrate to be processed is processed by using the second device to complete the edge washing process of the substrate to be processed; and the present application improves the edge of the substrate to be processed by performing an edge exposure process on the substrate to be processed by using an exposure machine. Edge accuracy; this application also eliminates the use of the edger, saving the cost of the machine, shortening the process time, and improving the process efficiency.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

一种基板边缘处理的方法、掩模版，其中基板边缘处理方法包括利用第一装置在待处理基板上形成第一光阻层（S20）；在曝光机中利用掩膜版对第一光阻层进行曝光（S40）；通过利用第二装置对待处理基板进行处理，完成待处理基板的洗边工艺（S50）。

Description

基板边缘处理方法、掩膜版 技术领域
本申请涉及显示领域，特别涉及一种基板边缘处理方法、掩膜版。
 背景技术
近年来，中小尺寸液晶显示器发展迅猛。而在制备过程中，除了必要的精密光学仪器曝光机，还需要使用到洗边的曝边机对基板进行洗边。通常对于特殊的金属层会需要使用到曝边机进行洗边，以去除基板边缘的金属层和光刻胶等；
传统的TFT阵列的工艺流程中包括边缘曝光工艺。边缘曝光工艺为将基板周边的光刻胶或金属层等残留物去除，以避免后续工艺污染。但是，曝边机由于受限于简单的工艺，曝边精度不高。
 技术问题
本申请提供了一种基板边缘处理方法、掩膜版，以解决现有基板边缘曝光精度不高的技术问题。
 技术解决方案
本申请提供了一种基板边缘处理方法，其中，包括步骤：
提供一待处理基板；
利用第一装置在所述待处理基板上形成第一光阻层；
在曝光机中利用掩膜版对所述第一光阻层进行曝光；
利用第二装置对所述待处理基板上的所述第一光阻层进行显影工艺；
利用第三装置对经过显影后的所述待处理基板进行蚀刻工艺。
在本申请的基板边缘处理方法中，
在所述曝光机中利用所述掩膜版对所述第一光阻层进行曝光之前，还包括步骤：
利用对准系统在所述掩膜版上进行标记。
在本申请的基板边缘处理方法中，
所述掩膜版上包括至少四个所述标记。
在本申请的基板边缘处理方法中，
所述掩膜版包括透光区域和遮光区域；
所述遮光区域的面积小于所述第一光阻层的面积。
在本申请的基板边缘处理方法中，
所述遮光区域为规则的长方形。
在本申请的基板边缘处理方法中，
每一所述遮光区域的边界与每一所述第一光阻区域的边界的间距为9.5mm~10.5mm。
本申请还提出了一种掩膜版，其中，所述掩膜版应用于上述的基板边缘处理方法。
在本申请的掩膜版中，
所述掩膜版包括透光区域和遮光区域；
所述遮光区域的面积小于待处理基板上第一光阻层的面积。
在本申请的掩膜版中，
所述遮光区域为规则的长方形；
在本申请的掩膜版中，
每一所述遮光区域的边界与每一所述第一光阻区域的边界的间距为9.5mm~10.5mm。
本申请还提出了一种基板边缘处理方法，其包括：
提供一待处理基板；
利用第一装置在所述待处理基板上形成第一光阻层；
在曝光机中利用掩膜版对所述第一光阻层进行曝光；
利用第二装置对所述待处理基板进行边缘处理。
在本申请的基板边缘处理方法中，
在所述曝光机中利用所述掩膜版对所述第一光阻层进行曝光之前，还包括步骤：
利用对准系统在所述掩膜版上进行标记。
在本申请的基板边缘处理方法中，
所述掩膜版上包括至少四个所述标记。
在本申请的基板边缘处理方法中，
所述掩膜版包括透光区域和遮光区域，所述遮光区域的面积小于所述第一光阻层的面积。
在本申请的基板边缘处理方法中，
所述遮光区域为规则的长方形。
在本申请的基板边缘处理方法中，
每一所述遮光区域的边界与每一所述第一光阻区域的边界的间距为9.5mm~10.5mm。
 有益效果
本申请通过利用曝光机对完成一道光罩制程工艺的待处理基板进行边缘曝光工艺，提高了待处理基板的洗边精度；本申请还省去了曝边机的使用，节省了机台的成本，缩短制程时间，提高了制程效率。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请基板边缘处理方法的步骤示意图；
图2为本申请掩膜版与待处理基板位置摆放图；
图3为本申请掩膜版的结构图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
请参阅图1，图1为本申请基板边缘处理方法的步骤示意图。
请参阅图2，图2为本申请掩膜版与待处理基板位置摆放图。
所述基板边缘处理方法包括：
S10、提供一待处理基板；
本步骤中所提供的所述待处理基板102为经过一道光罩制程工艺后的基板。
在一种实施例中，所述光罩制程工艺可以是完成栅极层、源漏极或其他金属层等膜层的制备。
而完成上述光罩制程工艺后的基板周边会残留光刻胶或金属层等残留物，未避免后续工艺污染，因此需要进行后续洗边处理。
S20、利用第一装置在所述待处理基板上形成第一光阻层；
本申请主要利用曝光机对所述待处理基板102进行边缘处理。而曝光机主要是利用灯光发出UVA波长的紫外线，将胶片或其他透明体上的图像信息转移到涂有感光物质的表面上的机器设备。
在使用曝光机之前，所述待处理基板102需要在第一装置中涂覆一第一光阻，形成第一光阻层。
在一种实施例中，所述第一装置为光阻涂布机。
传统的洗边方式利用曝边机对基板进行洗边处理。传统的曝边机不要使用掩膜版，直接采用已有工装对待处理基板102进行洗边处理。传统的曝边机的精度只能到达0.5mm左右，而采用曝光机进行边缘曝光工艺的精度能达到微米级别。
因此，本申请在曝光机中增加了一掩膜版101。所述掩膜版101仅对待处理基板102进行边缘曝光处理。
S30、利用对准系统在所述掩膜版上进行标记；
曝光机(未画出)主要由照明系统、对准系统、掩膜版载台、玻璃基板载台和光学系统组成。本步骤主要是利用所述曝光机中的对准系统对掩膜版101进行对位标记103；
所述掩膜版包括透光区域106和遮光区域104。
所述掩膜版101的透光区域106包括至少四个所述标记103。为了保证所述掩膜版101更加精确的对位，所述掩膜版101的透光区域106包括21个所述标记103。
S40、在曝光机中利用掩膜版对第一光阻层进行曝光；
本步骤主要在曝光机中进行。
利用所述掩膜版101对所述待处理基板102上的第一光阻层进行边缘曝光。
在一种实施例中，所述掩膜版101中遮光区域104的面积小于所述待处理基板102上所涂布的第一光阻层的面积。
所述遮光区域至所述待处理基板102的外围区域105为本步骤中需要进行处理的区域。
在一种实施例中，所述掩膜版101以及所述掩膜版101的遮光区域均为规则的形状，比如长方形或者正方形等。
所述遮光区域的每一边界与所述第一光阻层的每一边界的间距为10±0.5mm，即大致范围为9.5mm~10.5mm。
步骤S50、利用第二装置对所述待处理基板进行洗边处理；
本步骤主要为对经过曝光的待处理基板102进行后续的显影以及蚀刻工艺。
首先，利用第二装置对所述待处理基板102上的所述第一光阻层进行显影。一般利用显影剂将经过曝光部分的第一光阻清洗掉，只剩下未曝光的第一光阻。然后用去离子水将已经溶解的第一光阻冲走。
而显影之后对所述待处理基板102进行加热烘烤，让未曝光的第一光阻更加坚固的依附在所述待处理基板102上。
其次，本步骤还包括利用第三装置对经过显影后的所述待处理基板102进行处理。
在一种实施例中，所述第三装置可以为蚀刻机等。
利用蚀刻工艺或其他洗边工艺，将未被第一光阻覆盖的膜层结构去除，完成所述待处理基板102的边缘处理，并将所述待处理基板102输送至下一道工艺中。
本申请通过利用曝光机对完成一道光罩制程工艺的待处理基板进行边缘曝光工艺，提高了待处理基板的洗边精度；本申请还省去了曝边机的使用，节省了机台的成本，缩短制程时间，提高了制程效率。
请参阅图3，图3为本申请掩膜版的结构图。
所述掩膜版201应用于上述实施例中所述待处理基板102的边缘处理方法。
所述掩膜版201包括透光区域206和遮光区域204。
在一种实施例中，所述遮光区域204的面积小于待处理基板202上第一光阻层的面积。
所述遮光区域至所述待处理基板202的外围区域205为所述待处理基板202需要进行处理的区域。
在一种实施例中，所述掩膜版201以及所述掩膜版201的遮光区域204均为规则的形状，比如长方形或者正方形等.
所述遮光区域204的每一边界与所述第一光阻层的每一边界的间距为10±0.5mm，即大致范围为9.5mm~10.5mm。
本申请提出了一种基板边缘处理的方法、掩模版，所述基板边缘处理方法包括利用第一装置在待处理基板上形成第一光阻层；其次，在曝光机中利用掩膜版对第一光阻层进行曝光；最后，通过利用第二装置对待处理基板进行处理，完成待处理基板的洗边工艺；本申请通过利用曝光机对待处理基板进行边缘曝光工艺，提高了待处理基板的洗边精度；本申请还省去了曝边机的使用，节省了机台的成本，缩短制程时间，提高了制程效率。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (16)

  1. 一种基板边缘处理方法，其中，包括步骤：
    提供一待处理基板；
    利用第一装置在所述待处理基板上形成第一光阻层；
    在曝光机中利用掩膜版对所述第一光阻层进行曝光；
    利用第二装置对所述待处理基板上的所述第一光阻层进行显影工艺；
    利用第三装置对经过显影后的所述待处理基板进行蚀刻工艺。
  2. 根据权利要求1所述的基板边缘处理方法，其中，
    在所述曝光机中利用所述掩膜版对所述第一光阻层进行曝光之前，还包括步骤：
    利用对准系统在所述掩膜版上进行标记。
  3. 根据权利要求2所述的基板边缘处理方法，其中，
    所述掩膜版上包括至少四个所述标记。
  4. 根据权利要求1所述的基板边缘处理方法，其中，
    所述掩膜版包括透光区域和遮光区域；
    所述遮光区域的面积小于所述第一光阻层的面积。
  5. 根据权利要求4所述的基板边缘处理方法，其中，
    所述遮光区域为规则的长方形。
  6. 根据权利要求5所述的基板边缘处理方法，其中，
    每一所述遮光区域的边界与每一所述第一光阻区域的边界的间距为9.5mm~10.5mm。
  7. 一种掩膜版，其中，所述掩膜版应用于如权利要求1所述的一种基板边缘处理方法。
  8. 根据权利要求7所述的掩膜版，其中，
    所述掩膜版包括透光区域和遮光区域；
    所述遮光区域的面积小于待处理基板上第一光阻层的面积。
  9. 根据权利要求8所述的掩膜版，其中，
    所述遮光区域为规则的长方形；
  10. 根据权利要求8所述的掩膜版，其中，
    每一所述遮光区域的边界与每一所述第一光阻区域的边界的间距为9.5mm~10.5mm。
  11. 一种基板边缘处理方法，其包括步骤：
    提供一待处理基板；
    利用第一装置在所述待处理基板上形成第一光阻层；
    在曝光机中利用掩膜版对所述第一光阻层进行曝光；
    利用第二装置对所述待处理基板进行边缘处理。
  12. 根据权利要求11所述的基板边缘处理方法，其中，
    在所述曝光机中利用所述掩膜版对所述第一光阻层进行曝光之前，还包括步骤：
    利用对准系统在所述掩膜版上进行标记。
  13. 根据权利要求12所述的基板边缘处理方法，其中，
    所述掩膜版上包括至少四个所述标记。
  14. 根据权利要求11所述的基板边缘处理方法，其中，
    所述掩膜版包括透光区域和遮光区域，所述遮光区域的面积小于所述第一光阻层的面积。
  15. 根据权利要求14所述的基板边缘处理方法，其中，
    所述遮光区域为规则的长方形。
  16. 根据权利要求15所述的基板边缘处理方法，其中，
    每一所述遮光区域的边界与每一所述第一光阻区域的边界的间距为9.5mm~10.5mm。
PCT/CN2019/077717 2018-03-29 2019-03-11 基板边缘处理方法、掩膜版 WO2019184694A1 (zh)

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