WO2018032913A1 - 隔垫物的制备方法和显示基板的制备方法 - Google Patents

隔垫物的制备方法和显示基板的制备方法 Download PDF

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Publication number
WO2018032913A1
WO2018032913A1 PCT/CN2017/092617 CN2017092617W WO2018032913A1 WO 2018032913 A1 WO2018032913 A1 WO 2018032913A1 CN 2017092617 W CN2017092617 W CN 2017092617W WO 2018032913 A1 WO2018032913 A1 WO 2018032913A1
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Prior art keywords
photoresist pattern
photoresist
seconds
substrate
photoresist layer
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PCT/CN2017/092617
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English (en)
French (fr)
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郑奉官
王伟杰
曾庆慧
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京东方科技集团股份有限公司
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Priority to US15/743,025 priority Critical patent/US10578927B2/en
Publication of WO2018032913A1 publication Critical patent/WO2018032913A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13396—Spacers having different sizes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13398—Spacer materials; Spacer properties

Definitions

  • the present invention relates to the field of display, and in particular to a method for preparing a spacer and a method for preparing the display substrate.
  • the liquid crystal display device includes a liquid crystal cell including two oppositely disposed glass substrates and a liquid crystal between the two glass substrates.
  • a plurality of spacers are supported between the two glass substrates so that a space for accommodating the liquid crystal is formed between the two glass substrates.
  • the current process for preparing spacers between the two glass substrates is complicated, resulting in high cost of preparing the spacers.
  • the embodiment of the invention provides a method for preparing the spacer.
  • the technical solution is as follows:
  • a method of making a spacer comprises:
  • the mask is composed of a fully transparent region and an opaque region.
  • the preparation method further includes:
  • the first photoresist pattern and the second photoresist pattern are subjected to a water washing treatment and after the water washing, the first photoresist pattern and the The second photoresist pattern is subjected to a blow drying process.
  • the method further comprises: over the exposed photoresist layer, the exposed photoresist The developer is sprayed on the layer to subject the exposed photoresist layer to an overdevelopment process by a developer.
  • the processing time of the overexposure treatment of the exposed photoresist layer is greater than or equal to 96 seconds and less than or equal to 144 seconds.
  • the processing time is 100 seconds, 110 seconds, 120 seconds, 130 seconds, or 140 seconds.
  • the overexposure processing on the exposed photoresist layer further comprising: immersing the substrate and the exposed photoresist layer on the substrate in a developer solution The over-developing treatment is performed on the exposed photoresist layer by the developer.
  • the method before the exposing the photoresist layer by using the mask, the method further includes:
  • the photoresist layer is pre-baked to make the photoresist layer viscous.
  • the first duration is greater than or equal to 50 seconds and less than or equal to 70 seconds.
  • the first duration is 55 seconds, 60 seconds, or 65 seconds.
  • the embodiment of the invention further provides a method for preparing a display substrate, and the method for preparing the display substrate comprises the method for preparing the spacer described above.
  • the first photoresist pattern and the second photoresist pattern are formed by overdeveloping the exposed photoresist layer. Further, a concave portion is formed at an outer edge of the lower portion of the first photoresist pattern near the substrate, and a concave portion is formed at an outer edge of the lower portion of the second photoresist pattern adjacent to the substrate. Waiting for the first duration, causing the photoresist on the surface of the first photoresist pattern to flow downward to fill the recess of the first photoresist pattern, and to make the photoresist on the surface of the second photoresist pattern Flowing downward to fill the recess of the second photoresist pattern.
  • the mask used in preparing the spacer may be a common mask including a completely transparent region and an opaque region, thereby simplifying the process and reducing the production. this.
  • FIG. 1 is a flow chart of a method for preparing a spacer according to Embodiment 1 of the present invention
  • FIG. 2a is a flow chart of a method for preparing a spacer provided by Embodiment 2 of the present invention.
  • FIG. 2b is a schematic view showing the formation of a photoresist layer according to Embodiment 2 of the present invention.
  • FIG. 2c is a schematic diagram of forming a first photoresist pattern and a second photoresist pattern according to Embodiment 2 of the present invention
  • FIG. 2d is a schematic view showing the flow of a photoresist provided in Embodiment 2 of the present invention.
  • 2e is a schematic view showing the formation of a first spacer and a second spacer provided by the second embodiment of the present invention.
  • an embodiment of the present invention provides a method for preparing a spacer.
  • the preparation method comprises:
  • Step 101 Form a photoresist layer on the substrate.
  • Step 102 Exposing the photoresist layer using a mask.
  • Step 103 performing overexposure processing on the exposed photoresist layer to form a first photoresist pattern and a second photoresist pattern on the substrate; a height perpendicular to a direction of the substrate a direction in which the area of the cross section of the first photoresist pattern is larger than the area of the cross section of the second photoresist pattern at a position of the same height; the first photoresist pattern is adjacent to the substrate a concave portion is formed on an outer edge of the lower portion, and a concave portion is formed on an outer edge of the lower portion of the second photoresist pattern adjacent to the substrate;
  • Step 104 Waiting for the first duration, causing the photoresist on the surface of the first photoresist pattern to flow downward to fill the recess of the first photoresist pattern, and to make the surface of the second photoresist pattern a photoresist flowing downward to fill the recess of the second photoresist pattern;
  • Step 105 post-baking the first photoresist pattern and the second photoresist pattern to form a first spacer and a second spacer, the height of the first spacer being greater than the second The height of the spacer.
  • the mask is composed of a fully transparent region and an opaque region.
  • the first duration is greater than or equal to 50 seconds and less than or equal to 70 seconds.
  • the first duration is 55 seconds, 60 seconds, or 65 seconds, and the like.
  • the preparing method further includes: performing a water washing process on the first photoresist pattern and the second photoresist pattern in the step of waiting for the first duration to clean the first photoresist pattern and the second light
  • the developer of the surface of the glue pattern is engraved, and after the water washing, the first photoresist pattern and the second photoresist pattern are subjected to a blow-drying treatment using an air knife.
  • the preparation method further comprises: spraying the developer on the exposed photoresist layer over the exposed photoresist layer to pass the developer solution;
  • the exposed photoresist layer is subjected to an overdevelopment process.
  • the processing time of the overexposure treatment of the exposed photoresist layer is greater than or equal to 96 seconds and less than or equal to 144 seconds.
  • the processing time is 100 seconds, 110 seconds, 120 seconds, 130 seconds, or 140 seconds, and the like.
  • the preparing method further comprises: immersing the substrate and the exposed photoresist layer on the substrate in a developing solution, and performing the lithography through the exposure process by the developing solution.
  • the glue layer is subjected to an overdevelopment process.
  • the preparing method further comprises: pre-baking the photoresist layer to make the photoresist layer viscous.
  • the first photoresist pattern and the second photoresist pattern are formed by overdeveloping the exposed photoresist layer. Further, a concave portion is formed at an outer edge of the lower portion of the first photoresist pattern near the substrate, and a concave portion is formed at an outer edge of the lower portion of the second photoresist pattern adjacent to the substrate. Waiting for the first duration, causing the photoresist on the surface of the first photoresist pattern to flow downward to fill the recess of the first photoresist pattern, and to make the photoresist on the surface of the second photoresist pattern Flowing downward to fill the recess of the second photoresist pattern.
  • the mask used in the preparation of the spacer may be a conventional mask including a completely transparent region and an opaque region, thereby simplifying the process and reducing the production cost.
  • the engraved layer is pre-baked prior to exposure to evaporate a portion of the solvent contained in the photoresist layer to make the photoresist thick and viscous, thereby facilitating the shaping of the photoresist layer.
  • an embodiment of the present invention provides a method for preparing a spacer.
  • the method includes:
  • Step 201 forming a photoresist layer on the substrate.
  • the substrate may be a glass substrate.
  • a photoresist is first coated on the substrate, and stops when the thickness of the photoresist layer on the substrate reaches a preset thickness threshold, that is, a photoresist layer is formed on the substrate.
  • the preset thickness threshold may be greater than or equal to 3 microns and less than or equal to 4 microns.
  • the preset thickness threshold is 3 micrometers, 3.3 micrometers, 3.5 micrometers, 3.7 micrometers, or 4 micrometers.
  • Step 202 pre-baking the photoresist layer on the substrate, so that the photoresist in the photoresist layer becomes viscous.
  • the photoresist is a viscous liquid containing a large amount of solvent. After the photoresist layer is formed on the substrate, the photoresist can easily deform the photoresist layer by gravity. At the edge of the photoresist layer, the photoresist is more susceptible to deformation of the edges of the photoresist layer by gravity. To this end, in this step, the engraved layer is pre-baked to evaporate a portion of the solvent contained in the photoresist in the photoresist layer to make the photoresist thick and viscous, which is advantageous for shaping the photoresist layer.
  • Step 203 The photoresist layer is exposed to light using a mask.
  • the mask used in this step is a conventional mask comprising a completely transparent region and an opaque region.
  • the production cost of the common mask is lower than the production cost of the special mask, and the preparation process is also simpler than the preparation process of the special mask.
  • the special mask includes a completely transparent region, a semi-transmissive region and an opaque region. . Therefore, the embodiment can reduce the preparation cost and process difficulty of the spacer.
  • the fully transparent region of the mask includes at least one first fully transparent region corresponding to the first spacer and at least one second fully transparent region corresponding to the second spacer.
  • the area of the first completely transparent region is larger than the area of the second completely transparent region.
  • the photoresist layer After exposing the photoresist layer, the photoresist layer includes at least one first illumination region corresponding to the first spacer and at least one second illumination region corresponding to the second spacer.
  • the exposed photoresist has a molecular density and hardness much greater than other unexposed photoresists after the exposure process.
  • Step 204 Perform an overdevelopment process on the exposed photoresist layer to form a first photoresist pattern and a second photoresist pattern on the substrate; a height direction in a direction perpendicular to the substrate, in the same The area of the cross section of the first photoresist pattern at the height position is larger than the area of the cross section of the second photoresist pattern; a recess is formed at an outer edge of the lower portion of the first photoresist pattern near the substrate, A recess is formed in an outer edge of the lower portion of the second photoresist pattern adjacent to the substrate.
  • the manner in which the exposure-treated photoresist layer is subjected to an overdevelopment process includes a method of spraying a developer and a method of immersing in a developer.
  • the specific implementation may be: lithography after exposure processing Above the adhesive layer, a developing solution is sprayed onto the exposed photoresist layer to over-develop the exposed photoresist layer by the developer
  • the specific implementation manner may be: immersing the exposed photoresist layer on the substrate and the substrate in the developing solution to perform over-development processing on the exposed photoresist layer by the developing solution.
  • the processing time of the overdevelopment processing is larger than the processing time of the normal development processing.
  • the processing time of the usual overdevelopment is usually 10% to 30% longer than the processing time of the normal development processing.
  • the processing time for overdevelopment may be 10%, 15%, 20%, 25%, or 30% longer than the processing time of the normal development processing.
  • the processing time of the overdevelopment processing is 20% longer than the processing time of the normal development processing.
  • the processing time required for the normal developing treatment is greater than or equal to 80 seconds and less than or equal to 120 seconds, and the processing time of the overdevelopment processing is greater than or equal to 96 seconds and less than or equal to 144 seconds.
  • the processing time of the overdevelopment processing is 100 seconds, 110 seconds, 120 seconds, 130 seconds, or 140 seconds.
  • the processing time required for the normal development process is greater than or equal to 60 seconds and less than or equal to 100 seconds, and the processing time of the overdevelopment processing is greater than or equal to 72 seconds and less than or equal to 120 seconds.
  • the processing time of the overdevelopment processing is 75 seconds, 80 seconds, 90 seconds, 100 seconds, or 110 seconds, and the like.
  • This embodiment uses a negative photoresist, that is, the developer has a slower etching rate to the exposed photoresist than the photoresist which is not exposed. In fact, positive photoresist can also be used.
  • the developer is corrosive and can etch the photoresist in the exposed photoresist layer. Since the photoresist in the first exposed region and the photoresist in the second exposed region in the exposed photoresist layer have higher molecular density and hardness, the developer is The photoresist in an exposed region and the photoresist in the second exposed region are etched at a slower rate. Referring to FIG. 2c, the developer etches the photoresist around the first exposed region to form a first photoresist pattern during the development process, and etches the photoresist around the second exposed region to A second photoresist pattern is formed.
  • the outer edge of the first photoresist pattern near the lower portion of the substrate has a recess
  • the outer edge of the second photoresist pattern near the lower portion of the substrate has a recess
  • the volume of the photoresist of the second photoresist pattern from the first height A to the top B is less than or equal to the volume of the recess of the lower outer edge of the second photoresist pattern.
  • the volume of the photoresist from the first height A to the top B is less than or equal to the volume of the recess of the lower outer edge of the second photoresist pattern.
  • the distance from the first height A to the top B is 0.5 micrometers.
  • Step 205 Waiting for the first duration, causing the photoresist on the surface of the first photoresist pattern to flow downward to fill the recess of the first photoresist pattern, and to cause the photoresist on the surface of the second photoresist pattern to flow downward To fill the recess of the second photoresist pattern.
  • the photoresist on the surface of the first photoresist pattern flows downward to fill the recess of the lower outer edge of the first photoresist pattern under gravity; It should be noted that if the lower outer edge of the first photoresist pattern has no recess, the photoresist on the surface of the first photoresist pattern may not flow downward.
  • the photoresist on the surface of the second photoresist pattern flows downward to fill the concave portion of the outer edge of the lower portion of the second photoresist pattern under gravity; It should be noted that if the lower outer edge of the second photoresist pattern has no recess, the photoresist on the surface of the second photoresist pattern may not flow downward.
  • the photoresist located on the top of the second photoresist may flow downward so that the height of the second photoresist is more significantly reduced.
  • the height of the finally formed second spacer is less than the height of the first spacer.
  • the first photoresist pattern and the second photoresist pattern may be subjected to a water washing process to clean the surface of the first photoresist pattern and the second photoresist pattern.
  • the liquid can prevent the first photoresist pattern and the developer on the surface of the second photoresist pattern from continuing to etch the first photoresist pattern and the second photoresist pattern.
  • the first photoresist pattern and the second photoresist pattern are subjected to a blow-drying treatment using an air knife after water washing.
  • the first duration is greater than or equal to 50 seconds and less than or equal to 70 seconds.
  • the first duration is 55 seconds, 60 seconds, or 65 seconds, and the like.
  • Step 206 post-baking the first photoresist pattern and the second photoresist pattern to form a first spacer and a second spacer, the height of the first spacer being greater than the second The height of the spacer.
  • the two substrates can be supported by the first spacer and the second spacer.
  • the embodiment of the invention further provides a method for preparing a display substrate, and the method for preparing the display substrate comprises the method for preparing the spacer described above.
  • the method for preparing the display substrate comprises the method for preparing the spacer described above.
  • the first photoresist pattern and the second photoresist pattern are formed. Further, a concave portion is formed at an outer edge of the lower portion of the first photoresist pattern near the substrate, and a concave portion is formed at an outer edge of the lower portion of the second photoresist pattern adjacent to the substrate. Waiting for the first duration, causing the photoresist on the surface of the first photoresist pattern to flow downward to fill the recess of the first photoresist pattern, and to make the photoresist on the surface of the second photoresist pattern Flowing downward to fill the recess of the second photoresist pattern.
  • the mask used in the preparation of the spacer may be a conventional mask including a completely transparent region and an opaque region, thereby simplifying the process and reducing the production cost.
  • the first photoresist pattern and the second photoresist pattern may be subjected to a water washing process to prevent the developer from continuing to engrave the first photoresist pattern and the second photoresist pattern. eclipse.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

一种隔垫物的制备方法和显示基板的制备方法。该隔垫物的制备方法包括：对经过曝光处理的光刻胶层进行过度显影处理，以在基板上形成第一光刻胶图案和第二光刻胶图案（103，204）；在第一光刻胶图案靠近基板的下部的外边缘形成有凹部，在第二光刻胶图案靠近基板的下部的外边缘形成有凹部；等待第一时长，使第一光刻胶图案表面的光刻胶向下流动以填充第一光刻胶图案的凹部，并使第二光刻胶图案表面的光刻胶向下流动以填充第二光刻胶图案的凹部（104，205）。该方法能够简化制备隔垫物的工艺，降低制备隔垫物的成本。

Description

隔垫物的制备方法和显示基板的制备方法
相关申请
本申请要求保护在2016年8月17日提交的申请号为201610681530.6的中国专利申请的优先权，该申请的全部内容以引用的方式结合到本文中。
技术领域
本发明涉及显示领域，特别涉及一种隔垫物的制备方法和显示基板的制备方法。
背景技术
液晶显示设备因其具有功耗低、轻薄化的特点，目前得到广泛使用。液晶显示设备包括液晶盒，液晶盒包括两块相对设置的玻璃基板以及位于该两块玻璃基板之间的液晶。
在目前该两块玻璃基板之间用多个隔垫物来支撑，以使该两块玻璃基板之间形成有容纳液晶的空间。然而，目前在该两块玻璃基板之间制备隔垫物的工艺较复杂，导致制备隔垫物的成本很高。
发明内容
为了简化制备隔垫物的工艺，降低制备隔垫物的成本，本发明实施例提供了一种隔垫物的制备方法。所述技术方案如下：
一方面，提供了一种隔垫物的制备方法。所述制备方法包括：
在基板上形成光刻胶层；
使用掩膜板对所述光刻胶层进行曝光处理；
对经过曝光处理的所述光刻胶层进行过度显影处理，以在所述基板上形成第一光刻胶图案和第二光刻胶图案；以垂直于所述基板的方向为高度方向，在相同高度的位置处所述第一光刻胶图案的横截面的面积大于所述第二光刻胶图案的横截面的面积；在所述第一光刻胶图案靠近所述基板的下部的外边缘形成有凹部，在所述第二光刻胶图案靠近所述基板的下部外边缘形成有凹部；等待第一时长，使所述第一光刻胶图案表面的光刻胶向下流动以填充所述第一光刻胶图案的凹部，并使所述第二光刻胶图案表面的光刻胶向下流动以填充所述第二光刻胶图案的凹部形；
后烘(postbaking)所述第一光刻胶图案和所述第二光刻胶图案以形成第一隔垫物和第二隔垫物，所述第一隔垫物的高度大于所述第二隔垫物的高度。
可选的，所述掩膜板由全透光区域和不透光区域组成。
可选的，所述制备方法还包括：
在所述等待第一时长的步骤中，对所述第一光刻胶图案和所述第二光刻胶图案进行水洗处理且在水洗后使用风刀对所述第一光刻胶图案和所述第二光刻胶图案进行吹干处理。
可选的，在对经过曝光处理的所述光刻胶层进行过度显影处理的步骤之前，还包括：在经过曝光处理的所述光刻胶层上方，向经过曝光处理的所述光刻胶层喷洒显影液，以通过显影液对经过曝光处理的所述光刻胶层进行过度显影处理。
可选的，对经过曝光处理的所述光刻胶层进行过度显影处理的处理时间大于或等于96秒且小于或等于144秒。
可选的，所述处理时间为100秒、110秒、120秒、130秒或140秒。
可选的，在所述对经过曝光处理的所述光刻胶层进行过度显影处理之前，还包括：将所述基板以及所述基板上经过曝光处理的所述光刻胶层浸泡在显影液中，以通过所述显影液对经过曝光处理的所述光刻胶层进行过度显影处理。
可选的，在所述使用掩膜板对所述光刻胶层进行曝光处理之前，还包括：
对所述光刻胶层进行预烘烤处理，以使所述光刻胶层变的粘稠。
可选的，所述第一时长大于或等于50秒且小于或等于70秒。
可选的，所述第一时长为55秒、60秒或65秒。
本发明实施例还提供了一种显示基板的制备方法，所述显示基板的制备方法包括以上描述的隔垫物的制备方法。
通过对经过曝光处理的光刻胶层进行过度显影，形成了第一光刻胶图案和第二光刻胶图案。并且，在第一光刻胶图案靠近基板的下部的外边缘形成有凹部，在第二光刻胶图案靠近基板的下部的外边缘形成有凹部。等待第一时长，使所述第一光刻胶图案表面的光刻胶向下流动以填充所述第一光刻胶图案的凹部，并使所述第二光刻胶图案表面的光刻胶向下流动以填充所述第二光刻胶图案的凹部。如此，在制备隔垫物时采用的掩膜板可以是包括完全透光区域和不透光区域的普通掩膜板就可，从而可以简化工艺，降低生产成 本。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例一提供的一种隔垫物的制备方法的流程图；
图2a是本发明实施例二提供的一种隔垫物的制备方法的流程图；
图2b是本发明实施例二提供的形成光刻胶层的示意图；
图2c是本发明实施例二提供的形成第一光刻胶图案和第二光刻胶图案的示意图；
图2d是本发明实施例二提供的光刻胶流动的示意图；以及
图2e是本发明实施例二提供的形成第一隔垫物和第二隔垫物的示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明实施方式作进一步地详细描述。
实施例一
参见图1，本发明实施例提供了一种隔垫物的制备方法。所述制备方法包括：
步骤101：在基板上形成光刻胶层。
步骤102：使用掩膜板对该光刻胶层进行曝光处理。
步骤103：对经过曝光处理的所述光刻胶层进行过度显影处理，以在所述基板上形成第一光刻胶图案和第二光刻胶图案；以垂直于所述基板的方向为高度方向，在相同高度的位置处所述第一光刻胶图案的横截面的面积大于所述第二光刻胶图案的横截面的面积；在所述第一光刻胶图案靠近所述基板的下部的外边缘形成有凹部，在所述第二光刻胶图案靠近所述基板的下部的外边缘形成有凹部；
步骤104：等待第一时长，使所述第一光刻胶图案表面的光刻胶向下流动以填充所述第一光刻胶图案的凹部，并使所述第二光刻胶图案表面的光刻胶向下流动以填充所述第二光刻胶图案的凹部；
步骤105：后烘所述第一光刻胶图案和所述第二光刻胶图案以形成第一隔垫物和第二隔垫物，所述第一隔垫物的高度大于所述第二隔垫物的高度。
可选的，所述掩膜板由全透光区域和不透光区域组成。第一时长大于或等于50秒且小于或等于70秒。例如，第一时长为55秒、60秒或65秒等。
可选的，所述制备方法还包括：在等待第一时长的步骤中，对第一光刻胶图案和第二光刻胶图案进行水洗处理，以清洗第一光刻胶图案和第二光刻胶图案表面的显影液，且在水洗后使用风刀对第一光刻胶图案和第二光刻胶图案进行吹干处理。
可选的，在上述步骤103之前，所述制备方法还包括：在经过曝光处理的该光刻胶层上方，向经过曝光处理的该光刻胶层喷洒显影液，以通过该显影液对经过曝光处理的该光刻胶层进行过度显影处理。
可选的，对经过曝光处理的该光刻胶层进行过度显影处理的处理时间大于或等于96秒且小于或等于144秒。例如，该处理时间为100秒、110秒、120秒、130秒或140秒等。
可选的，在上述步骤103之前，所述制备方法还包括：将基板以及基板上经过曝光处理的该光刻胶层浸泡在显影液中，以通过该显影液对经过曝光处理的该光刻胶层进行过度显影处理。
可选的，在上述步骤102之前，所述制备方法还包括：对光刻胶层进行预烘烤处理，以使光刻胶层变的粘稠。
在本发明实施例中，通过对经过曝光处理的光刻胶层进行过度显影，形成了第一光刻胶图案和第二光刻胶图案。并且，在第一光刻胶图案靠近基板的下部的外边缘形成有凹部，在第二光刻胶图案靠近基板的下部的外边缘形成有凹部。等待第一时长，使所述第一光刻胶图案表面的光刻胶向下流动以填充所述第一光刻胶图案的凹部，并使所述第二光刻胶图案表面的光刻胶向下流动以填充所述第二光刻胶图案的凹部。如此，在制备隔垫物时采用的掩膜板可以是包括完全透光区域和不透光区域的普通掩膜板就可，从而可以简化工艺，降低生产成本。另外，在曝光之前对刻胶层进行预烘烤处理，以蒸发光刻胶层中的光刻胶含有的部分溶剂，使光刻胶变的粘稠，有利于光刻胶层定形。
实施例二
参见图2a，本发明实施例提供了一种隔垫物的制备方法。该方法包括：
步骤201：在基板上形成光刻胶层。
该基板可以为玻璃基板。参见图2b，首先在基板上涂光刻胶，当该基板上的光刻胶层的厚度达到预设厚度阈值时停止，即在该基板上形成光刻胶层。
可选的，预设厚度阈值可以大于或等于3微米且小于或等于4微米。可选的，预设厚度阈值为3微米、3.3微米、3.5微米、3.7微米或4微米等。
步骤202：对基板上的光刻胶层进行预烘烤处理，使得光刻胶层中的光刻胶变的粘稠。
光刻胶是一种粘稠液体，含有大量的溶剂，在基板上形成光刻胶层后，光刻胶在重力的作用很容易使光刻胶层变形。在光刻胶层的边缘，光刻胶在重力的作用下更容易使光刻胶层的边缘变形。为此，在本步骤中对刻胶层进行预烘烤处理，以蒸发光刻胶层中的光刻胶含有的部分溶剂，使光刻胶变的粘稠，有利于光刻胶层定形。
步骤203：使用掩膜板对该光刻胶层进行曝光处理。
在执行本步骤之前需要先生成该掩膜板。在本步骤中使用的该掩膜板是一种普通掩膜板，该掩膜板包括完全透光区域和不透光区域。该普通掩膜板的生产成本比特殊掩膜板的生产成本低，制备工艺也比特殊掩膜板的制备工艺简单，特殊掩膜板包括完全透光区域、半透光区域和不透光区域。所以本实施例可以降低隔垫物的制备成本和工艺难度。
该掩膜板的完全透光区域包括至少一个对应于第一隔垫物的第一完全透光区域和至少一个对应于第二隔垫物的第二完全透光区域。所述第一完全透光区域的面积大于所述第二完全透光区域的面积。
在对该光刻胶层经过曝光处理后，该光刻胶层上包括至少一个对应于第一隔垫物的第一照射区域和至少一个对应于第二隔垫物的第二照射区域。当采用负性光刻胶时，在曝光处理之后，收到曝光的光刻胶的分子密度和坚硬度远大于其他未经过曝光的光刻胶。
步骤204：对经过曝光处理的光刻胶层进行过度显影处理，以在该基板上形成第一光刻胶图案和第二光刻胶图案；以垂直于该基板的方向为高度方向，在相同高度的位置处第一光刻胶图案的横截面的面积大于第二光刻胶图案的横截面的面积；在所述第一光刻胶图案靠近所述基板的下部的外边缘形成有凹部，在所述第二光刻胶图案靠近所述基板的下部的外边缘形成有凹部。
对经过曝光处理的光刻胶层进行过度显影处理的方式包括喷洒显影液方式和浸泡在显影液方式。
对于喷洒显影液方式，其具体实现方式可以为：在经过曝光处理的光刻 胶层上方，向经过曝光处理的光刻胶层喷洒显影液，以通过该显影液对经过曝光处理的光刻胶层进行过度显影处理
对于浸泡显影液方式，其具体实现方式可以为：将基板以及基板上经过曝光处理的光刻胶层浸泡在显影液中，以通过该显影液对经过曝光处理的光刻胶层进行过度显影处理。
其中，过度显影处理的处理时间大于正常显影处理的处理时间。通常过度显影的处理时间比正常显影处理的处理时间长10％至30％。例如，过度显影的处理时间可以比正常显影处理的处理时间长10％、15％、20％、25％或者30％等。
假设过度显影处理的处理时间比正常显影处理的处理时间长20％。对于采用喷洒显影液方式，正常显影处理所需要的处理时间大于或等于80秒且小于或等于120秒，则过度显影处理的处理时间大于或等于96秒且小于或等于144秒。可选的，过度显影处理的处理时间为100秒、110秒、120秒、130秒或140秒等。
对于浸泡显影液方式，正常显影处理所需要的处理时间大于或等于60秒且小于或等于100秒，则过度显影处理的处理时间大于或等于72秒且小于或等于120秒。可选的，过度显影处理的处理时间为75秒、80秒、90秒、100秒或110秒等。
其中，需要说明的是：(1)本实施例采用负性光刻胶，即与未被曝光处理的光刻胶相比，显影液对经过曝光处理的光刻胶的腐蚀速度较慢。实际上，也可以采用正性光刻胶。(2)显影液具有腐蚀性，能够对经过曝光处理的光刻胶层中的光刻胶进行刻蚀。由于经过曝光处理的光刻胶层中的所述第一曝光区域内的光刻胶和所述第二曝光区域内的光刻胶的分子密度和坚硬度都较高，显影液对所述第一曝光区域内的光刻胶和所述第二曝光区域内的光刻胶刻蚀的速度较慢。参见图2c，在显影处理时显影液会刻蚀掉所述第一曝光区域周围的光刻胶以形成第一光刻胶图案，并刻蚀掉所述第二曝光区域周围的光刻胶以形成第二光刻胶图案。
由于对光刻胶采用过度显影处理，所以使得第一光刻胶图案靠近基板的下部的外边缘具有一图凹部，第二光刻胶图案靠近该基板的下部的外边缘具有一图凹部。
其中，第二光刻胶图案从第一高度A到顶部B的光刻胶体积小于或等于第二光刻胶图案下部外边缘的凹部体积。例如，参见图2c，对于第二光刻 胶图案来说，从第一高度A到顶部B的光刻胶体积小于或等于第二光刻胶图案下部外边缘的凹部体积。
可选的，从所述第一高度A到顶部B的距离为0.5微米。
步骤205：等待第一时长，使第一光刻胶图案表面的光刻胶向下流动以填充第一光刻胶图案的凹部，并使第二光刻胶图案表面的光刻胶向下流动以填充第二光刻胶图案的凹部。
参见图2d，由于第一光刻胶图案下部外边缘具有凹部，这样第一光刻胶图案表面的光刻胶在重力作用下会向下流动填充第一光刻胶图案下部外边缘的凹部；其中，需要说明的是：如果第一光刻胶图案的下部外边缘没有凹部，第一光刻胶图案表面的光刻胶可能不会往下流动。并且，由于第二光刻胶图案下部外边缘具有凹部，这样第二光刻胶图案表面的光刻胶在重力作用下会向下流动填充第二光刻胶图案下部外边缘的凹部；其中，需要说明的是：如果第二光刻胶图案的下部外边缘没有凹部，第二光刻胶图案表面的光刻胶可能不会往下流动。
如图2d所示，由于第二光刻胶图案顶部表面的面积较小，所以位于第二光刻胶顶部的光刻胶会向下流动使得第二光刻胶的高度降低更为显著，使得最终形成的第二隔垫物的高度小于第一隔垫物的高度。
可选的，在等待第一时长的步骤中，可以对第一光刻胶图案和第二光刻胶图案进行水洗处理，以清洗第一光刻胶图案和第二光刻胶图案表面的显影液，这样可以防止第一光刻胶图案和第二光刻胶图案表面的显影液继续对第一光刻胶图案和第二光刻胶图案进行刻蚀。在水洗后使用风刀对第一光刻胶图案和第二光刻胶图案进行吹干处理。
可选的，第一时长大于或等于50秒且小于或等于70秒。例如，第一时长为55秒、60秒或65秒等。
步骤206：后烘所述第一光刻胶图案和所述第二光刻胶图案以形成第一隔垫物和第二隔垫物，所述第一隔垫物的高度大于所述第二隔垫物的高度。
后烘后形成固态的第一隔垫物和第二隔垫物后，就可以用第一隔垫物和第二隔垫物支撑两块基板。
本发明实施例还提供了一种显示基板的制备方法，所述显示基板的制备方法包括以上描述的隔垫物的制备方法。该显示基板的制备方法的实施可以参见上述隔垫物的制备方法的实施例，重复之处不再赘述。
在本发明实施例中，通过对经过曝光处理的光刻胶层进行过度显影，形 成了第一光刻胶图案和第二光刻胶图案。并且，在第一光刻胶图案靠近基板的下部的外边缘形成有凹部，在第二光刻胶图案靠近基板的下部的外边缘形成有凹部。等待第一时长，使所述第一光刻胶图案表面的光刻胶向下流动以填充所述第一光刻胶图案的凹部，并使所述第二光刻胶图案表面的光刻胶向下流动以填充所述第二光刻胶图案的凹部。如此，在制备隔垫物时采用的掩膜板可以是包括完全透光区域和不透光区域的普通掩膜板就可，从而可以简化工艺，降低生产成本。另外，在等待第一时长的步骤中，可以对第一光刻胶图案和第二光刻胶图案进行水洗处理，防止显影液继续对第一光刻胶图案和第二光刻胶图案进行刻蚀。
上述本发明实施例序号仅仅为了描述，不代表实施例的优劣。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此。任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。

Claims (11)

  1. 一种隔垫物的制备方法，包括：
    在基板上形成光刻胶层；
    使用掩膜板对所述光刻胶层进行曝光处理；
    对经过曝光处理的所述光刻胶层进行过度显影处理，以在所述基板上形成第一光刻胶图案和第二光刻胶图案；以垂直于所述基板的方向为高度方向，在相同高度的位置处所述第一光刻胶图案的横截面的面积大于所述第二光刻胶图案的横截面的面积；在所述第一光刻胶图案靠近所述基板的下部的外边缘形成有凹部，在所述第二光刻胶图案靠近所述基板的下部的外边缘形成有凹部；
    等待第一时长，使所述第一光刻胶图案表面的光刻胶向下流动以填充所述第一光刻胶图案的凹部，并使所述第二光刻胶图案表面的光刻胶向下流动以填充所述第二光刻胶图案的凹部；
    后烘所述第一光刻胶图案和所述第二光刻胶图案以形成第一隔垫物和第二隔垫物，所述第一隔垫物的高度大于所述第二隔垫物的高度。
  2. 如权利要求1所述的制备方法，其中所述掩膜板由全透光区域和不透光区域组成。
  3. 如权利要求2所述的制备方法，还包括：
    在所述等待第一时长的步骤中，对所述第一光刻胶图案和所述第二光刻胶图案进行水洗处理，且在水洗后使用风刀对所述第一光刻胶图案和所述第二光刻胶图案进行吹干处理。
  4. 如权利要求1所述的制备方法，其中在对经过曝光处理的所述光刻胶层进行过度显影处理的步骤之前，还包括：
    在经过曝光处理的所述光刻胶层上方，向经过曝光处理的所述光刻胶层喷洒显影液，以通过显影液对经过曝光处理的所述光刻胶层进行过度显影处理。
  5. 如权利要求4所述的制备方法，其中对经过曝光处理的所述光刻胶层进行过度显影处理的处理时间大于或等于96秒且小于或等于144秒。
  6. 如权利要求5所述的制备方法，其中所述处理时间为100秒、110秒、120秒、130秒或140秒。
  7. 如权利要求1所述的制备方法，其中在所述对经过曝光处理的所述 光刻胶层进行过度显影处理之前，还包括：
    将所述基板以及所述基板上经过曝光处理的所述光刻胶层浸泡在显影液中，以通过所述显影液对经过曝光处理的所述光刻胶层进行过度显影处理。
  8. 如权利要求1至7任一项权利要求所述的制备方法，其中在所述使用掩膜板对所述光刻胶层进行曝光处理之前，还包括：
    对所述光刻胶层进行预烘烤处理，以使所述光刻胶层变的粘稠。
  9. 如权利要求1至7任一项权利要求所述的制备方法，其中所述第一时长大于或等于50秒且小于或等于70秒。
  10. 如权利要求9所述的制备方法，其中所述第一时长为55秒、60秒或65秒。
  11. 一种显示基板的制备方法，包括如权利要求1-10所述的隔垫物的制备方法。
PCT/CN2017/092617 2016-08-17 2017-07-12 隔垫物的制备方法和显示基板的制备方法 WO2018032913A1 (zh)

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