WO2018161432A1 - 显示面板的制造方法、线栅偏光片及其制造方法 - Google Patents

显示面板的制造方法、线栅偏光片及其制造方法 Download PDF

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Publication number
WO2018161432A1
WO2018161432A1 PCT/CN2017/084113 CN2017084113W WO2018161432A1 WO 2018161432 A1 WO2018161432 A1 WO 2018161432A1 CN 2017084113 W CN2017084113 W CN 2017084113W WO 2018161432 A1 WO2018161432 A1 WO 2018161432A1
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WO
WIPO (PCT)
Prior art keywords
wire grid
substrate
wire
manufacturing
photoresist layer
Prior art date
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PCT/CN2017/084113
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English (en)
French (fr)
Inventor
李明辉
陈孝贤
陈黎暄
Original Assignee
深圳市华星光电技术有限公司
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Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US15/541,334 priority Critical patent/US10509258B2/en
Publication of WO2018161432A1 publication Critical patent/WO2018161432A1/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G02F1/133548—Wire-grid polarisers

Definitions

  • the present invention relates to the field of field display technology, and in particular, to a method of manufacturing a display panel, a wire grid polarizer, and a method of fabricating the same.
  • BM black matrix
  • the existing black matrix needs to be purchased or fabricated in a mask to make a black matrix, and the black matrix is an independent manufacturing process, which makes the entire display panel process complicated, which is not conducive to cost saving and process simplification. Moreover, the black matrix alone occupies the thickness of the panel, which is disadvantageous for the slimness of the display panel.
  • the technical problem to be solved by the present invention is to provide a method for manufacturing a display panel, a wire grid polarizer, and a method for fabricating the same, which can save cost, simplify the process, and facilitate thinning and thinning of the display panel.
  • the present invention adopts a technical solution to provide a method for manufacturing a wire grid polarizer, which comprises: preparing a plurality of spaced-apart wire grid structures on a first substrate, wherein Defining a plurality of transparent regions of the first substrate between the wire grid structures; forming a black matrix in the transparent region by using the wire grid structure as a mask; wherein preparing a plurality of spaced-apart wire grid structures on the first substrate comprises: Forming a wire grid material layer on a substrate; coating a photoresist material on the wire gate material layer to form a photoresist layer; embossing the photoresist layer to partially expose the wire gate material layer; etching the exposed portion of the wire gate material layer The photoresist layer is removed; the wire grid structure includes a plurality of spaced-apart wire grids, the spacing between the wire grid structures is 50-1000 ⁇ m, and the spacing between the wire grids is 50-1000 nm.
  • another technical solution adopted by the present invention is to provide a manufacturing method of a display panel, which comprises: preparing a plurality of spaced-apart wire grid structures on a first substrate, wherein a plurality of lines Defining a plurality of transparent regions of the first substrate between the gate structures; forming a black matrix in the transparent regions by using the wire grid structure as a mask; providing a second substrate and a liquid crystal layer; and performing the first substrate, the second substrate, and the liquid crystal layer The group forms a display panel.
  • another technical solution adopted by the present invention is to provide a wire grid polarizer including a wire grid polarizer including a plurality of spaced-apart wire grid structures and a plurality of wire grid structures Between the black matrix.
  • the present invention prepares a plurality of spaced-apart wire grid structures on a first substrate, wherein a plurality of transparent portions of the first substrate are defined between the plurality of wire grid structures a region; then forming a black matrix in the transparent region with the wire grid structure as a mask; providing a second substrate and a liquid crystal layer; forming the display panel by forming the first substrate, the second substrate, and the liquid crystal layer;
  • the mask forms a black matrix on the first substrate, so there is no need to separately fabricate or purchase a mask to make a black matrix, which can save cost; since the separate matrix is not required to make a black matrix, the process of the display panel can be simplified. Since the thickness of the display panel is shared by the wire grid structure of the wire grid polarizer, the display panel is light and thin.
  • FIG. 1 is a schematic flow chart of an embodiment of a method for fabricating a display panel of the present invention
  • step S11 in FIG. 1 is a schematic flow chart of step S11 in FIG. 1;
  • FIG. 3 is a schematic diagram of a process corresponding to the flow in FIG. 2;
  • step S12 in FIG. 1 is a schematic flow chart of step S12 in FIG. 1;
  • Figure 5 is a schematic diagram of a process corresponding to the flow in Figure 4.
  • FIG. 6 is a schematic diagram of processes corresponding to steps S13 and S14
  • FIG. 7 is a schematic flow chart of an embodiment of a method for manufacturing a wire grid polarizer according to the present invention.
  • Figure 8 is a schematic view showing the structure of an embodiment of a wire grid polarizer of the present invention.
  • FIG. 1 is a schematic flow chart of an embodiment of a method for fabricating a display panel of the present invention.
  • the method for manufacturing the display panel includes the following steps:
  • Step S11 preparing a plurality of spaced-apart wire grid structures on the first substrate, wherein a plurality of transparent regions of the first substrate are defined between the plurality of wire grid structures.
  • a plurality of spaced-apart wire grid structures are prepared on the first substrate, and the wire grid structure may include a plurality of spaced-apart wire grids, as described in detail below.
  • Forming the wire grid structure on the first substrate is to form a wire grid polarizer, and the wire grid structure can function as a polarizing light, and the liquid crystal layer is used to realize different display effects of the display panel.
  • the first substrate may be a color filter substrate or a thin film transistor array substrate.
  • step S11 please refer to FIG. 2 and FIG. 3.
  • FIG. 2 is a schematic flowchart of step S11 in FIG.
  • FIG. 3 is a schematic diagram of a process corresponding to the flow in FIG. 2.
  • the preparing a plurality of spaced-apart wire grid structures on the first substrate may specifically include the following steps:
  • Step S111 forming a wire grid material layer on the first substrate.
  • a wire grid material layer 12 is formed, for example, on the first substrate 11.
  • the material of the wire grid material layer 12 may be a metal.
  • the material of the wire grid material layer 12 may specifically be a metal material such as aluminum (Al), chromium (Cr), gold (Au), silver (Ag), or nickel (Ni).
  • Step S112 coating a photoresist material on the wire gate material layer to form a photoresist layer.
  • step S112 a photoresist material is applied, for example, on the gate material layer 12 to form the photoresist layer 13.
  • Step S113 imprinting the photoresist layer to partially expose the wire gate material layer.
  • the photoresist layer 13 is embossed to partially expose the wire gate material layer 12, and the photoresist layer 13 may be embossed by a nanoimprint process.
  • the imprinting of the photoresist layer 13 by using a nanoimprint process may specifically include the following steps: a. baking the photoresist layer 13; b. imprinting the photoresist layer 13 by using the nano imprint mold 14; The nanoimprinting mold 14 is detached from the photoresist layer 13; d.
  • the photoresist material of the recess 13a of the embossed photoresist layer 13 is etched away to partially expose the wire grid material layer 12.
  • the photoresist layer 13 and the nanoimprinting mold 14 are subjected to a temperature lowering treatment before the nanoimprinting mold 14 is detached from the photoresist layer 13.
  • Step d can be performed by reactive ion etching.
  • Step S114 etching the exposed portion of the wire grid material layer.
  • step S114 for example, the exposed portion of the wire grid material layer 12 is etched.
  • Step S115 removing the photoresist layer.
  • step S115 the remaining portions of the photoresist layer are removed to obtain a plurality of wire grid structures 15, and a plurality of transparent regions 16 of the first substrate 11 are defined between the plurality of wire grid structures 15, only two phases are shown in the figure.
  • the adjacent wire grid structure 15 and a transparent region 16 therebetween can be readily understood by those skilled in the art of the transparent region 16 between the plurality of wire grid structures 15 and two adjacent wire grid structures 15.
  • the wire grid structure 15 may include a plurality of spaced-apart wire grids 151.
  • the spacing d1 between the wire grid structures 15 may be 50 to 1000 ⁇ m, that is, the transparent region 16 may have a width of 50 to 1000 ⁇ m.
  • the spacing d2 between the wire grids 151 may be 50 to 1000 nm.
  • the width d3 of the wire grid 151 may be 50 to 200 nm
  • the height d4 of the wire grid 151 may be 50 to 500 nm
  • the period d5 of the wire grid 151 may be 100 to 300 nm.
  • the period d5 of the wire grid 151 refers to a distance d5 in which the adjacent two wire grids 151 of the same wire grid structure 15 are staggered, that is, a distance d5 between the side faces of the adjacent two wire grids 151 on the same side, for example, two adjacent wire grids.
  • the wire grid structure is fabricated by nanoimprint technology to form a periodically arranged wire grid.
  • the wire grid structure formed by the nano imprint technology can achieve nanometer order period, and the wire grid period is smaller than the incident light wavelength, thereby generating sub-wavelength.
  • the polarizing effect of the wire grid makes the wire grid structure have high transmittance in the pixel opening area.
  • Step S12 forming a black matrix in the transparent region by using the wire grid structure as a mask.
  • FIG. 4 is a schematic flowchart of step S12 in FIG. 1
  • FIG. 5 is a schematic diagram of a process corresponding to the flow in FIG.
  • Forming a black matrix in the transparent region by using the wire grid structure as a mask may specifically include the following steps:
  • Step S121 forming a black matrix material layer on the wire grid structure and the transparent region.
  • a black matrix material layer 17 is formed, for example, on the wire grid structure 15 and the transparent region 16.
  • Step S122 Illuminating from a side of the first substrate away from the wire grid structure to cure the black matrix material on the transparent region.
  • step S122 illumination is performed, for example, from the side of the first substrate 11 away from the wire grid structure 15 to cure the black matrix material on the transparent region 16.
  • the bottom exposure is reverse exposure, and the exposure may be an ultraviolet exposure light source and linearly polarized light whose polarization direction is perpendicular to the polarization direction of the wire grid formed by the first substrate, so that there is no ultraviolet light in the portion of the wire grid structure during exposure.
  • the black matrix material of the corresponding region is not cured, and the black matrix material 17a on the transparent region 16 is cured by ultraviolet light.
  • Step S123 cleaning the black matrix material in the region where the light grid is blocked by the wire grid structure.
  • step S123 for example, the black matrix material in the region where the light grid structure 15 is blocked by the wire grid structure 15 is cleaned.
  • Step S13 providing a second substrate and a liquid crystal layer.
  • FIG. 6 is a schematic diagram of processes corresponding to steps S13 and S14.
  • the second substrate 21 may be a color filter substrate or a thin film transistor array substrate.
  • a color resist layer may be formed on the wire grid structure 15 and the black matrix 17a.
  • the color resist layer includes a red, green and blue color resist.
  • the red, green and blue color resists are the first color resist 41 and the second color resist 42 respectively.
  • the black matrix 17a may be located on a region of the first substrate 11 corresponding to a gap between adjacent color resists.
  • Step S14 forming a display panel by grouping the first substrate, the second substrate, and the liquid crystal layer.
  • step S14 the liquid crystal layer 31 is packaged between the second substrate 11 and the first substrate 21 for the group.
  • a wired gate structure 25 may also be formed on the second substrate 21, and the structure is similar to the wire grid structure 15 on the first substrate 11 and will not be described herein.
  • the black matrix can be formed either on a color filter substrate or on a thin film transistor array substrate.
  • the figure shows a flat display panel, and the present invention is equally applicable to a curved display panel. If it is a curved display panel, a black matrix can be fabricated on the thin film transistor array substrate, thereby avoiding the thin film transistor array substrate and the The offset of the color filter substrate can further reduce light leakage.
  • the black matrix setting can improve the contrast of the display panel, avoid adjacent color matching of red (R), green (G), blue (B), reduce external light reflection, and prevent external light from illuminating the thin film transistor array substrate.
  • the polysilicon layer of the thin film transistor array layer increases leakage current, prevents light leakage, etc., and the display panel generally uses a black matrix (Black Matrix, BM) for shading.
  • FIG. 7 is a schematic flow chart of an embodiment of a method for manufacturing a wire grid polarizer according to the present invention.
  • the method of manufacturing the wire grid polarizer includes the following steps:
  • Step S21 preparing a plurality of spaced-apart wire grid structures on the first substrate, wherein a plurality of transparent regions of the first substrate are defined between the plurality of wire grid structures.
  • Step S22 forming a black matrix in the transparent region with the wire grid structure as a mask.
  • the step S21 is similar to the step S11 described in the foregoing, and is not described here.
  • the step S22 is similar to the step S12 described in the foregoing, and is not described here. For details, refer to the foregoing description.
  • FIG. 8 is a schematic structural diagram of an embodiment of a wire grid polarizer according to the present invention.
  • the wire grid polarizer includes a plurality of spaced-apart wire grid structures 15 and a black matrix 17a between the plurality of wire grid structures 15.
  • the wire grid structure 15 may include a plurality of spaced-apart wire grids 151.
  • the pitch d1 between the wire grid structures 15 may be 50 to 1000 ⁇ m, that is, the width of the black matrix 17a may be 50 to 1000 ⁇ m.
  • the spacing d2 between the wire grids 151 may be 50 to 1000 nm.
  • the width d3 of the wire grid 151 may be 50 to 200 nm
  • the height d4 of the wire grid 151 may be 50 to 500 nm
  • the period d5 of the wire grid 151 may be 100 to 300 nm.
  • the period d5 of the wire grid 151 refers to a distance d5 in which the adjacent two wire grids 151 of the same wire grid structure 15 are staggered, that is, a distance d5 between the side faces of the adjacent two wire grids 151 on the same side, for example, two adjacent wire grids.
  • the present invention forms a plurality of spaced-apart wire grid structures on a first substrate, wherein a plurality of transparent regions of the first substrate are defined between the plurality of wire grid structures; and then the wire grid structure is used as a mask to form the transparent regions a black matrix; providing a second substrate and a liquid crystal layer; forming the first substrate, the second substrate, and the liquid crystal layer into a display panel; since the black matrix is formed on the first substrate by using the wire grid structure as a mask, it is not required
  • making or purchasing a mask to make a black matrix can save cost; since a separate process is not required to make a black matrix, the process of the display panel can be simplified; since the display panel is shared with the wire grid structure of the wire grid polarizer The thickness is therefore advantageous for the thinness of the display panel.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Polarising Elements (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种显示面板的制造方法，包括：在第一基板（11）上制备多个间隔排列的线栅结构（15），其中，多个线栅结构（15）之间定义第一基板（11）的多个透明区域（16）；以线栅结构（15）为掩膜版在透明区域（16）形成黑色矩阵（17a）；提供第二基板（21）和液晶层（31）；将第一基板（11）、第二基板（21）、液晶层（31）进行对组形成显示面板，从而能够节约成本、简化制程。

Description

显示面板的制造方法、线栅偏光片及其制造方法
【技术领域】
本发明涉及领域显示技术领域，特别是涉及一种显示面板的制造方法、线栅偏光片及其制造方法。
【背景技术】
为了提高对比度，避免相连红（R）、绿（G）、蓝（B）等色层混色，减少外界光反射，防止外界光线照射TFT（Thin Film Transistor，薄膜晶体管）器件的a-Si层而增加漏电流等，一般都会使用黑色矩阵（Black matrix，BM）进行遮光。
现有的黑色矩阵在制作时需要预先购买或者制作的掩膜版来制作黑色矩阵且黑色矩阵是一个独立的制作工艺过程，使得整个显示面板的制作过程复杂，不利于成本的节约和制程简化，且黑色矩阵单独占用面板厚度，不利于显示面板的轻薄化。
【发明内容】
本发明主要解决的技术问题是提供一种显示面板的制造方法、线栅偏光片及其制造方法，能够节约成本、简化制程、利于显示面板的轻薄化。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种线栅偏光片的制造方法，该制造方法包括：在第一基板上制备多个间隔排列的线栅结构，其中，多个线栅结构之间定义第一基板的多个透明区域；以线栅结构为掩膜版在透明区域形成黑色矩阵;其中，在第一基板上制备多个间隔排列的线栅结构包括：在第一基板上形成线栅材料层；在线栅材料层上涂布光阻材料以形成光阻层；对光阻层进行压印以使线栅材料层部分外露；将线栅材料层外露的部分蚀刻；将光阻层去除；线栅结构包括多个间隔排列的线栅，线栅结构之间的间距为50~1000μm，线栅之间的间距为50~1000nm。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种显示面板的制造方法，该制造方法包括：在第一基板上制备多个间隔排列的线栅结构，其中，多个线栅结构之间定义第一基板的多个透明区域；以线栅结构为掩膜版在透明区域形成黑色矩阵；提供第二基板和液晶层；将第一基板、第二基板、液晶层进行对组形成显示面板。
为解决上述技术问题，本发明采用的又一个技术方案是：提供一种线栅偏光片，该线栅偏光片包括线栅偏光片包括多个间隔排列的线栅结构和位于多个线栅结构之间的黑色矩阵。
本发明的有益效果是：区别于现有技术的情况，本发明通过在第一基板上制备多个间隔排列的线栅结构，其中，多个线栅结构之间定义第一基板的多个透明区域；然后以线栅结构为掩膜版在透明区域形成黑色矩阵；提供第二基板和液晶层；将第一基板、第二基板、液晶层进行对组形成显示面板；由于以线栅结构作为掩膜版在第一基板上形成黑色矩阵，因此不需要另外制作或者购买掩膜版来制作黑色矩阵，可以节约成本；由于不需要另外的单独的制程来制作黑色矩阵，可以简化显示面板的制程；由于与线栅偏光片的线栅结构共用部分显示面板的厚度，因此利于显示面板的轻薄化。
【附图说明】
图1是本发明显示面板的制作方法实施例的流程示意图；
图2是图1中的步骤S11的流程示意图；
图3是图2中流程对应的制程示意图；
图4是图1中步骤S12的流程示意图；
图5是图4中流程对应的制程示意图；
图6是步骤S13和S14对应的制程示意图
图7是本发明线栅偏光片的制造方法实施例的流程示意图；
图8是本发明线栅偏光片实施例的结构示意图。
【具体实施方式】
下面结合附图和实施例对本发明进行详细的说明。
请参阅图1，图1是本发明显示面板的制作方法实施例的流程示意图。
在本实施例中，显示面板的制作方法包括以下步骤：
步骤S11：在第一基板上制备多个间隔排列的线栅结构，其中，多个线栅结构之间定义第一基板的多个透明区域。
在步骤S11中，在第一基板上制备多个间隔排列的线栅结构，线栅结构可以包括多个间隔设置的线栅，具体请参见下文的描述。在第一基板上形成线栅结构的是形成线栅偏光片，线栅结构可以起到偏光的作用，配合液晶层实现显示面板的不同显示效果。第一基板可以为彩色滤光片基板或者薄膜晶体管阵列基板。
在步骤S11中，请参阅图2和图3，图2是图1中的步骤S11的流程示意图。图3是图2中流程对应的制程示意图。在第一基板上制备多个间隔排列的线栅结构具体可以包括以下步骤：
步骤S111：在第一基板上形成线栅材料层。
在步骤S111中，例如在第一基板11上形成线栅材料层12。线栅材料层12的材料可以为金属。线栅材料层12的材料具体可以为铝（Al）、铬(Cr)、金（Au）、银（Ａｇ）、镍（Ｎｉ）等金属材料。
步骤S112：在线栅材料层上涂布光阻材料以形成光阻层。
在步骤S112中，例如在线栅材料层12上涂布光阻材料以形成光阻层13。
步骤S113：对光阻层进行压印以使线栅材料层部分外露。
在步骤S113中，对光阻层13进行压印以使线栅材料层12部分外露具体可以为对光阻层13采用纳米压印工艺进行压印。对光阻层13采用纳米压印工艺进行压印具体可以包括以下步骤：a.对光阻层13进行烘烤；b.利用纳米压印模具14对光阻层13进行压印；c.将纳米压印模具14从光阻层13脱离；d.将经过压印后的光阻层13的凹处13a的光阻材料蚀刻去除以使线栅材料层12部分外露。在将纳米压印模具14从光阻层13脱离之前对光阻层13和纳米压印模具14进行降温处理。步骤d可以采用反应性离子蚀刻。
步骤S114：将线栅材料层外露的部分蚀刻。
在步骤S114中，例如将线栅材料层12外露的部分蚀刻。
步骤S115：将光阻层去除。
在步骤S115中，将光阻层剩余的部分去除，得到多个线栅结构15，多个线栅结构15之间定义第一基板11的多个透明区域16，图中仅画出两个相邻的线栅结构15和二者之间的一个透明区域16，本领域技术人员不难理解多个线栅结构15和两相邻线栅结构15之间透明区域16的情形。
线栅结构15可以包括多个间隔排列的线栅151。线栅结构15之间的间距d1可以为50~1000μm，也即透明区域16的宽度可以为50~1000μm。线栅151之间的间距d2可以为50~1000nm。
线栅151的宽度d3可以为50~200nm，线栅151的高度d4可以为50~500nm，线栅151的周期d5可以为100~300nm。线栅151的周期d5是指同一线栅结构15中相邻两线栅151错开的距离d5，也就是相邻两线栅151位于同一侧的侧面之间的间距d5，例如相邻两线栅151的左侧面和左侧面之间的间距d5或者右侧面与右侧面之间的间距d5。
线栅结构是通过纳米压印技术制作，形成周期性排列的线栅，采用纳米压印技术形成的线栅结构中线栅周期可以达到纳米数量级，线栅周期小于入射光波长，从而能够产生亚波长线栅的偏光效果，使得线栅结构在像素开口区具有高透过率。
步骤S12：以线栅结构为掩膜版在透明区域形成黑色矩阵。
在步骤S12中，请参阅图4和图5，图4是图1中步骤S12的流程示意图，图5是图4中流程对应的制程示意图。以线栅结构为掩膜版在透明区域形成黑色矩阵具体可以包括以下步骤：
步骤S121：在线栅结构和透明区域上形成黑色矩阵材料层。
在步骤S121中，例如在线栅结构15和透明区域16上形成黑色矩阵材料层17。
步骤S122：从第一基板远离线栅结构的一侧进行光照以使透明区域上的黑色矩阵材料固化。
在步骤S122中，例如从第一基板11远离线栅结构15的一侧进行光照以使透明区域16上的黑色矩阵材料固化。例如由下至上的进行反向曝光，曝光可以采用紫外曝光光源且为线性偏振光，其偏振方向与第一基板形成的线栅偏振方向垂直，从而在曝光时线栅结构所在区域部分无紫外光照射，对应区域的黑色矩阵材料没有被固化，透明区域16上的黑色矩阵材料17a有紫外光照射被固化。
步骤S123：将光线被线栅结构遮挡的线栅结构所在区域的黑色矩阵材料清洗。
在步骤S123中，例如将光线被线栅结构15遮挡的线栅结构15所在区域的黑色矩阵材料清洗。
步骤S13：提供第二基板和液晶层。
在步骤S13，请参阅图6，图6是步骤S13和S14对应的制程示意图。第二基板21可以为彩色滤光片基板或者薄膜晶体管阵列基板。在步骤S123之后可以在线栅结构15和黑色矩阵17a上形成色阻层，色阻层包括红绿蓝三色色阻，例如红绿蓝三色色阻分别为第一色阻41、第二色阻42、第三色阻43。黑色矩阵17a可以位于第一基板11上与相邻色阻之间间隙对应的区域。
步骤S14：将第一基板、第二基板、液晶层进行对组形成显示面板。
在步骤S14中，对组将液晶层31封装在第二基板11和第一基板21之间。
第二基板21上也可以形成有线栅结构25，结构与第一基板11上的线栅结构15类似此处不再赘述。
黑色矩阵既可以形成于彩色滤光片基板也可以在薄膜晶体管阵列基板制作。图中所示的为平板显示面板，本发明同样适用于曲面显示面板，若为曲面显示面板则可以将黑色矩阵制作在薄膜晶体管阵列基板，从而可以避免由于对组时发生的薄膜晶体管阵列基板和彩色滤光片基板的偏移，进而可以减少漏光。
黑色矩阵的设置可以提高显示面板显示的对比度，避免相邻的红（R）、绿（G）、蓝（B）等色阻混色，减少外界光反射，防止外界光线照射薄膜晶体管阵列基板上的薄膜晶体管阵列层的多晶硅层而增加漏电流，防止漏光等，显示面板一般都会使用黑色矩阵（Black matrix，BM）进行遮光。
请参阅图7，图7是本发明线栅偏光片的制造方法实施例的流程示意图。在本实施例中，线栅偏光片的制造方法包括以下步骤：
步骤S21：在第一基板上制备多个间隔排列的线栅结构，其中，多个线栅结构之间定义第一基板的多个透明区域。
步骤S22：以线栅结构为掩膜版在透明区域形成黑色矩阵。
步骤S21与前文描述的步骤S11类似，此处不再赘述，步骤S22与前文描述的步骤S12类似，此处不再赘述，具体请参见前文的描述。
请参阅图8，图8是本发明线栅偏光片实施例的结构示意图。在本实施例中，线栅偏光片包括多个间隔排列的线栅结构15和位于多个线栅结构15之间的黑色矩阵17a。
线栅结构15可以包括多个间隔排列的线栅151。线栅结构15之间的间距d1可以为50~1000μm，也即黑色矩阵17a的宽度可以为50~1000μm。线栅151之间的间距d2可以为50~1000nm。
线栅151的宽度d3可以为50~200nm，线栅151的高度d4可以为50~500nm，线栅151的周期d5可以为100~300nm。线栅151的周期d5是指同一线栅结构15中相邻两线栅151错开的距离d5，也就是相邻两线栅151位于同一侧的侧面之间的间距d5，例如相邻两线栅151的左侧面和左侧面之间的间距d5或者右侧面与右侧面之间的间距d5。
更多关于线栅结构和黑色矩阵的描述请参见前文的描述，此处不再赘述。
本发明通过在第一基板上制备多个间隔排列的线栅结构，其中，多个线栅结构之间定义第一基板的多个透明区域；然后以线栅结构为掩膜版在透明区域形成黑色矩阵；提供第二基板和液晶层；将第一基板、第二基板、液晶层进行对组形成显示面板；由于以线栅结构作为掩膜版在第一基板上形成黑色矩阵，因此不需要另外制作或者购买掩膜版来制作黑色矩阵，可以节约成本；由于不需要另外的单独的制程来制作黑色矩阵，可以简化显示面板的制程；由于与线栅偏光片的线栅结构共用部分显示面板的厚度，因此利于显示面板的轻薄化。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (15)

  1. 一种线栅偏光片的制造方法，其中，所述制造方法包括：
    在第一基板上制备多个间隔排列的线栅结构，其中，所述多个线栅结构之间定义所述第一基板的多个透明区域；
    以所述线栅结构为掩膜版在所述透明区域形成黑色矩阵;
    其中，所述在第一基板上制备多个间隔排列的线栅结构包括：
    在第一基板上形成线栅材料层；
    在所述线栅材料层上涂布光阻材料以形成光阻层；
    对所述光阻层进行压印以使所述线栅材料层部分外露；
    将所述线栅材料层外露的部分蚀刻；
    将所述光阻层去除；
    所述线栅结构包括多个间隔排列的线栅，所述线栅结构之间的间距为50~1000μm，所述线栅之间的间距为50~1000nm。
  2. 根据权利要求1所述的制造方法，其中，所述对所述光阻层进行压印以使所述线栅材料层部分外露包括：
    对所述光阻层采用纳米压印工艺进行压印。
  3. 根据权利要求2所述的制造方法，其中，对所述光阻层采用纳米压印工艺进行压印包括：
    对所述光阻层进行烘烤；
    利用纳米压印模具对所述光阻层进行压印；
    将所述纳米压印模具从所述光阻层脱离；
    将经过压印后的所述光阻层的凹处的光阻材料蚀刻去除以使所述线栅材料层部分外露。
  4. 根据权利要求1所述的制造方法，其中，所述线栅的宽度为50~200nm，所述线栅的高度为50~500nm，所述线栅的周期100~300nm。
  5. 根据权利要求1所述的制造方法，其中，所述以所述线栅结构为掩膜版在所述透明区域形成黑色矩阵包括：
    在所述线栅结构和所述透明区域上形成黑色矩阵材料层；
    从所述第一基板远离所述线栅结构的一侧进行光照以使所述透明区域上的黑色矩阵材料固化；
    将光线被所述线栅结构遮挡的所述线栅结构所在区域的黑色矩阵材料清洗。
  6. 一种显示面板的制造方法，其中，所述制造方法包括：
    在第一基板上制备多个间隔排列的线栅结构，其中，所述多个线栅结构之间定义所述第一基板的多个透明区域；
    以所述线栅结构为掩膜版在所述透明区域形成黑色矩阵；
    提供第二基板和液晶层；
    将所述第一基板、所述第二基板、所述液晶层进行对组形成所述显示面板。
  7. 根据权利要求6所述的制造方法，其中，所述在第一基板上制备多个间隔排列的线栅结构包括：
    在第一基板上形成线栅材料层；
    在所述线栅材料层上涂布光阻材料以形成光阻层；
    对所述光阻层进行压印以使所述线栅材料层部分外露；
    将所述线栅材料层外露的部分蚀刻；
    将所述光阻层去除。
  8. 根据权利要求7所述的制造方法，其中，所述对所述光阻层进行压印以使所述线栅材料层部分外露包括：
    对所述光阻层采用纳米压印工艺进行压印。
  9. 根据权利要求8所述的制造方法，其中，对所述光阻层采用纳米压印工艺进行压印包括：
    对所述光阻层进行烘烤；
    利用纳米压印模具对所述光阻层进行压印；
    将所述纳米压印模具从所述光阻层脱离；
    将经过压印后的所述光阻层的凹处的光阻材料蚀刻去除以使所述线栅材料层部分外露。
  10. 根据权利要求6所述的制造方法，其中，所述线栅结构包括多个间隔排列的线栅，所述线栅结构之间的间距为50~1000μm，所述线栅之间的间距为50~1000nm。
  11. 根据权利要求10所述的制造方法，其中，所述线栅的宽度为50~200nm，所述线栅的高度为50~500nm，所述线栅的周期100~300nm。
  12. 根据权利要求6所述的制造方法，其中，所述以所述线栅结构为掩膜版在所述透明区域形成黑色矩阵包括：
    在所述线栅结构和所述透明区域上形成黑色矩阵材料层；
    从所述第一基板远离所述线栅结构的一侧进行光照以使所述透明区域上的黑色矩阵材料固化；
    将光线被所述线栅结构遮挡的所述线栅结构所在区域的黑色矩阵材料清洗。
  13. 一种线栅偏光片，其中，所述线栅偏光片包括多个间隔排列的线栅结构和位于所述多个线栅结构之间的黑色矩阵。
  14. 根据权利要求13所述的线栅偏光片，其中，所述线栅结构包括多个间隔排列的线栅，所述线栅结构之间的间距为50~1000μm，所述线栅之间的间距为50~1000nm。
  15. 根据权利要求14所述的线栅偏光片，其中，所述线栅的宽度为50~200nm，所述线栅的高度为50~500nm，所述线栅的周期100~300nm。
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