WO2014171174A1 - エッチング液、補給液、及び配線形成方法 - Google Patents

エッチング液、補給液、及び配線形成方法 Download PDF

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Publication number
WO2014171174A1
WO2014171174A1 PCT/JP2014/053844 JP2014053844W WO2014171174A1 WO 2014171174 A1 WO2014171174 A1 WO 2014171174A1 JP 2014053844 W JP2014053844 W JP 2014053844W WO 2014171174 A1 WO2014171174 A1 WO 2014171174A1
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Prior art keywords
copper
layer
etching
etching solution
metal oxide
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PCT/JP2014/053844
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English (en)
French (fr)
Japanese (ja)
Inventor
優 福井
知志 斉藤
輝和 石田
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メック株式会社
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Application filed by メック株式会社 filed Critical メック株式会社
Priority to KR1020157030028A priority Critical patent/KR20150142695A/ko
Priority to CN201480021975.0A priority patent/CN105143515B/zh
Priority to JP2015512332A priority patent/JP6354084B2/ja
Publication of WO2014171174A1 publication Critical patent/WO2014171174A1/ja

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067—Etchants
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0338—Layered conductor, e.g. layered metal substrate, layered finish layer, layered thin film adhesion layer

Definitions

  • the present invention relates to a copper etching solution, a replenisher thereof, and a wiring formation method.
  • a touch panel display device or the like used in an electronic device has a display area and a frame area provided around the display area. In the frame area, a plurality of wirings drawn from the display area for connection to a circuit for detecting a touch position are formed.
  • Patent Document 1 As a method of forming the wiring in the frame area, for example, as disclosed in Patent Document 1 below, there is a method of forming a wiring by applying a silver paste on the upper surface of an electrode layer containing a metal oxide.
  • a silver paste on the upper surface of an electrode layer containing a metal oxide.
  • it is required to reduce the resistance value of the wiring material in order to cope with a display device of a terminal that is small and requires high performance such as a smartphone or a tablet terminal. Therefore, it has been studied to use copper, which has a lower resistance than silver paste, as a wiring material.
  • a method of forming the frame area wiring using copper as a wiring material there is a method in which a copper layer is formed on an electrode layer containing a metal oxide, and the patterning of the copper layer and the patterning of the electrode layer are sequentially performed. It is being considered.
  • a copper wiring pattern is formed by etching a copper layer on an electrode layer using an etching solution that dissolves copper, and then an etching solution that dissolves a metal oxide without dissolving copper is used.
  • the electrode layer (metal oxide layer) exposed between the copper wiring patterns is etched to form a laminated wiring pattern including the patterned electrode layer and the copper wiring pattern.
  • a copper layer is formed on an electrode layer containing a metal oxide, and an etching solution that can etch both copper and metal oxide is used to form a copper wiring pattern and to expose the metal oxide exposed between the copper wiring patterns.
  • a method of etching an object in the same etching tank (hereinafter also referred to as “collective etching”) has been studied.
  • collector etching A method of etching an object in the same etching tank
  • the present invention has been made in view of the above-described problems of the prior art, and provides a copper etching solution that can suppress side etching of a copper wiring pattern, a replenisher thereof, and a wiring forming method.
  • the copper etching solution of the present invention comprises an acidic aqueous solution containing cupric ions, halide ions, and a nonionic surfactant.
  • the nonionic surfactant has a cloud point of 15 to 55 ° C.
  • the replenisher of the present invention is a replenisher that is added to the etchant when the etchant of the present invention is used continuously or repeatedly, and consists of an acidic aqueous solution containing halide ions and a nonionic surfactant.
  • the replenisher of the present invention has a cloud point of 15 to 55 ° C. of the nonionic surfactant.
  • the etching solution of the present invention is brought into contact with a part of the copper layer of the laminated plate in which the metal oxide layer and the copper layer are laminated in this order on the base material, A step of forming a copper wiring pattern by etching a part of the metal oxide layer, and a portion of the metal oxide layer where the copper wiring pattern is not laminated; Etching the layer to form a laminated wiring pattern including a patterned metal oxide layer and the copper wiring pattern.
  • the metal oxide layer contains one or more metal oxides selected from the group consisting of zinc, tin, aluminum, indium, and gallium.
  • the “copper layer” in the present invention may be a layer made only of copper or a layer made of a copper alloy containing copper and other metals.
  • “copper” refers to copper or a copper alloy.
  • the “cloud point” in the present invention is a physical property value measured using a 1% by weight aqueous solution of a nonionic surfactant as a sample according to JIS K 2269.
  • a nonionic surfactant having a cloud point of 49 ° C. or higher the sample was measured according to JIS K 2269 with the sample kept at a temperature 2 to 3 ° C. higher than the expected cloud point.
  • the present invention it is possible to provide a copper etching solution that can suppress side etching of a copper wiring pattern, a replenisher thereof, and a wiring forming method.
  • (A)-(c) is sectional drawing according to process which shows typically one Embodiment of the wiring formation method of this invention.
  • the etching solution of the present invention can etch not only copper but also cap metal, metal oxide, and the like used for copper rust prevention.
  • cupric ion used in the etching solution of the present invention is blended as a component that oxidizes metallic copper.
  • the cupric ion can be contained in the etching solution by blending a cupric ion source.
  • the cupric ion source include one or more selected from cupric chloride, cupric sulfate, cupric bromide, cupric salts of organic acids, and cupric hydroxide.
  • the concentration of the cupric ion is preferably 0.01 to 5% by weight, more preferably 0.1 to 1% by weight, and still more preferably 0.2 to 0.7% by weight.
  • concentration is 0.01% by weight or more, the etching rate increases, so that copper can be etched quickly.
  • the concentration is 5 weight% or less, the melt stability of copper is maintained.
  • the concentration is preferably 0.2 to 0.7% by weight.
  • the halide ions used in the etching solution of the present invention are blended as a component that promotes copper etching.
  • the halide ions also function as a component for removing the metal oxide when etching an etching object in which copper and the metal oxide coexist.
  • Examples of the halide ion include one or more selected from fluoride ion, chloride ion, bromide ion, and iodide ion, and chloride ion and bromide ion are preferred from the viewpoint of copper etching property and handleability. Chloride ions are more preferred.
  • Halide ions include, for example, acids such as hydrochloric acid and hydrobromic acid, sodium chloride, ammonium chloride, calcium chloride, potassium chloride, potassium bromide, sodium fluoride, potassium iodide, cupric chloride, and bromide. It can be made to contain in etching liquid by mix
  • cupric chloride and cupric bromide can be used as having both functions of a halide ion source and a cupric ion source.
  • the concentration of halide ions in the etching solution is preferably 1 to 36% by weight, more preferably 5 to 25% by weight, and still more preferably 10 to 20% by weight.
  • concentration is 1% by weight or more, the etching property of copper is improved.
  • concentration is 36 weight% or less, precipitation of the halide in an etching liquid can be prevented.
  • the concentration is preferably 10 to 20% by weight.
  • the metal oxide etching property tends to improve in addition to the copper etching property. There is.
  • Nonionic surfactant In the etching solution of the present invention, in order to suppress side etching of the copper wiring pattern, at least one nonionic surfactant having a cloud point of 15 to 55 ° C. is blended.
  • the nonionic surfactant that can be used is not particularly limited as long as the cloud point is 15 to 55 ° C., but polyalkylene glycol derivatives, polyoxyalkylene alkyl ethers, polyoxyalkylene alkyl phenyl ethers, polyoxyethylene polyoxypropylene blocks Among nonionic surfactants such as polymers, polyoxyethylene polyoxypropylene glyceryl ether, polyoxyalkylene fatty acid monoester, polyoxyalkylene fatty acid diester, sorbitol higher fatty acid ester, glycerin higher fatty acid ester, sucrose higher fatty acid ester, etc. Those having a point of 15 to 55 ° C. can be appropriately selected.
  • nonionic surfactant having a cloud point of 17 to 38 ° C.
  • a nonionic surfactant having a cloud point of 17 to 30 ° C.
  • the concentration of the nonionic surfactant in the etching solution is preferably 0.01 to 20% by weight, more preferably 0.05 to 10% by weight, still more preferably 0.1 to 5% by weight. is there.
  • concentration is in the range of 0.01 to 20% by weight, side etching of the copper wiring pattern can be more effectively suppressed.
  • concentration is preferably 0.1 to 5% by weight.
  • the etching solution of the present invention is an acidic aqueous solution.
  • the acid compounded to make the etching solution acidic is not particularly limited.
  • sulfonic acid compounds such as methanesulfonic acid, benzenesulfonic acid, p-toluenesulfonic acid, taurine, hydrochloric acid, bromide
  • Mention may be made of inorganic acids such as hydroacid, sulfuric acid, nitric acid, borohydrofluoric acid and phosphoric acid, and carboxylic acids such as formic acid, acetic acid, propionic acid and butyric acid.
  • carboxylic acids such as formic acid, acetic acid, propionic acid and butyric acid.
  • One or more of these acids can be added to the etching solution of the present invention.
  • a preferable concentration of the acid is 0.01 to 1% by weight as H + concentration, more preferably 0.1 to 0.7% by weight, and still more preferably 0.15 to 0.55% by weight.
  • concentration is 0.01% by weight or more, the etching rate increases, so that copper can be etched quickly. Further, when the concentration is 1% by weight or less, the dissolution stability of copper is maintained. Further, when etching an etching object in which copper and a metal oxide coexist, if the acid concentration is within the above range, the etching rate of the metal oxide can be improved. Further, from the viewpoint of improving the linearity of the copper wiring pattern, the acid concentration is preferably within the above range.
  • an inorganic acid is preferably used as the acid.
  • hydrochloric acid or hydrobromic acid it is preferable because the etching solution is adjusted to be acidic and at the same time the halide ion source is used.
  • the etching solution of the present invention can be easily prepared by dissolving the above components in water.
  • water water from which ionic substances and impurities have been removed is preferable.
  • ion-exchanged water, pure water, ultrapure water, and the like are preferable.
  • additives such as a stabilizer, to the etching liquid of this invention as needed.
  • the use of the etching solution of the present invention is not particularly limited.
  • it is applied to an etching solution for forming a wiring pattern composed only of a copper wiring pattern, a laminated wiring pattern including a metal oxide wiring pattern and a copper wiring pattern, or the like. can do.
  • the copper wiring pattern of the metal oxide wiring pattern is formed. Side etching can be effectively suppressed.
  • the replenisher of the present invention is a replenisher that is added to the above-mentioned etching solution when the above-described etching solution of the present invention is used continuously or repeatedly, and consists of an acidic aqueous solution containing halide ions and a nonionic surfactant. .
  • the halide ion, the nonionic surfactant, and the acid compounded to make the etching solution acidic in the replenisher of the present invention are the same as those compounded in the above-described etching solution of the present invention.
  • the replenisher of the present invention may further contain a cupric ion source such as cupric chloride in a range not exceeding the concentration of 0.7% by weight of the cupric ion.
  • the replenisher of the present invention may contain components added to the etching solution.
  • the concentration of each component in the replenisher is appropriately set according to the concentration of each component in the etching solution. From the viewpoint of stably maintaining the effect of the etching solution of the present invention described above, halide ions
  • concentration of the nonionic surfactant is preferably 0.01 to 40% by weight, and the acid concentration is preferably 0.01 to 1% by weight as the H + concentration.
  • FIGS. 1 (a) to 1 (c) are cross-sectional views by process schematically showing an embodiment of a wiring forming method of the present invention.
  • a laminate 100 including a base material 1, a metal oxide layer 2, a copper layer 3 and a cap metal layer 4 sequentially formed on the base material 1 is prepared.
  • a resist pattern 5 is formed on the cap metal layer 4 of the laminated plate 100.
  • the laminated plate may not have a cap metal layer on the copper layer. When the cap metal layer is not formed on the copper layer, a resist pattern is formed on the copper layer.
  • the substrate 1 a resin substrate such as a polyethylene terephthalate film (PET film), a glass substrate, or the like can be used.
  • the metal oxide layer 2 is a layer containing an oxide of one or more metals selected from the group consisting of zinc, tin, aluminum, indium and gallium, and is an undercoat made of SiO 2 or the like directly on the substrate 1. It is provided via a layer or the like.
  • a method of providing the metal oxide layer 2 on the substrate for example, a known method such as vacuum deposition or sputtering can be employed.
  • a preferable thickness of the metal oxide layer 2 is about 5 to 200 nm.
  • the metal oxide constituting the metal oxide layer 2 may be a single metal oxide or a complex metal oxide.
  • ZnO, SnO 2 , Al 2 O 3 , indium tin oxide (ITO), indium zinc oxide (IZO), or a composite metal oxide in which a different metal is doped into ZnO can be used.
  • the composite metal oxide in which a different metal is doped in ZnO include AZO doped with aluminum and GZO doped with gallium.
  • one or more metal oxides selected from the group consisting of zinc, tin, and aluminum are preferable from the viewpoint of pattern formation, and one or more metal oxides selected from ITO, IZO, AZO, and GZO are more preferable.
  • the metal oxide may be either an amorphous or crystalline metal oxide.
  • the crystalline metal oxide is preferable because conductivity and durability are improved.
  • copper is more easily etched than the metal oxide in the conventional etching solution. Therefore, when the metal oxide is etched, the copper wiring pattern 7 (see FIG. 1B). ) Side etching was difficult to suppress.
  • the etching solution of the present invention described above since the etching solution of the present invention described above is used, side etching of the copper wiring pattern 7 can be suppressed even if the metal oxide is crystalline.
  • the metal oxide is crystalline can be determined by, for example, observing the surface of the metal oxide with a field emission transmission electron microscope (FE-TEM).
  • FE-TEM field emission transmission electron microscope
  • the metal oxide is crystalline, it can be observed as, for example, polygonal or oval crystal grains.
  • the crystalline metal oxide means that the proportion of the area occupied by the crystal grains exceeds 50% when the surface of the metal oxide is observed with the field emission transmission electron microscope (FE-TEM).
  • FE-TEM field emission transmission electron microscope
  • a metal oxide in which the area ratio occupied by the crystal grains is 70% to 100% is preferable.
  • the copper layer 3 can be formed on the metal oxide layer 2 by a known method such as vacuum deposition or sputtering.
  • the preferred thickness of the copper layer 3 is about 20 to 1000 nm.
  • a cap metal layer 4 is provided on the copper layer 3 as necessary for rust prevention of the copper layer 3 or the like.
  • the material of the cap metal layer 4 include aluminum, titanium, chromium, cobalt, nickel, zinc, molybdenum, silver, and alloys of these metals and copper.
  • the cap metal layer 4 is preferably made of a copper alloy different from the material of the copper layer 3 or a metal other than copper.
  • nickel, molybdenum, and alloys of these metals and copper are preferable.
  • a nickel-copper alloy having a nickel / copper weight ratio of 30/70 to 70/30 is preferable.
  • the cap metal layer 4 may be composed of a single layer or a plurality of layers.
  • the thickness of the cap metal layer 4 is preferably about 5 to 200 nm.
  • Examples of the method for forming the cap metal layer 4 include known methods such as vacuum deposition and sputtering.
  • the copper layer 3 shown in FIG. 1B is formed by bringing the etching solution of the present invention into contact with the copper layer 3. Furthermore, the etching solution of the present invention is brought into contact with a portion of the metal oxide layer 2 where the copper wiring pattern 7 is not laminated (exposed portion 8 in FIG. 1B), and the metal oxidation shown in FIG. By forming the object wiring pattern 9, the laminated wiring pattern 10 including the metal oxide wiring pattern 9 and the copper wiring pattern 7 is obtained.
  • the cap metal layer 4 is formed on the copper layer 3, before bringing the etching solution of the present invention into contact with the copper layer 3, the etching solution is brought into contact with the cap metal layer 4, as shown in FIG.
  • the cap metal wiring pattern 6 shown is formed.
  • the laminated wiring pattern 10 has a cap metal wiring pattern 6 on the copper wiring pattern 7 as shown in FIG.
  • a laminated wiring pattern 10 having a predetermined shape is obtained by bringing the etching solution of the present invention into contact with a region where the resist pattern 5 on the surface of the laminated plate 100 is not laminated.
  • side etching of the cap metal wiring pattern 6 when forming the copper wiring pattern 7 can be suppressed by forming the copper wiring pattern 7 using the etching solution of the present invention. Further, by forming the metal oxide wiring pattern 9 using the etching solution of the present invention, side etching of the cap metal wiring pattern 6 and the copper wiring pattern 7 when forming the metal oxide wiring pattern 9 can be suppressed. . Thereby, thinning of the line width W1 of the cap metal wiring pattern 6 and the line width W2 of the copper wiring pattern 7 can be suppressed.
  • the copper wiring pattern 7 is etched by galvanic corrosion when the copper layer 3 or the metal oxide layer 2 is etched with a conventional etching solution. There was a possibility that side etching of the film progressed. However, when the etching solution of the present invention is used, side etching of the copper wiring pattern 7 can be suppressed even when the cap metal layer 4, which is a dissimilar metal, is formed on the copper layer 3.
  • the method of using the etching solution of the present invention is not particularly limited. For example, a method of spraying the etching solution on a region where the resist pattern 5 on the surface of the laminated plate 100 is not laminated, or a laminate in which the resist pattern 5 is provided. The method etc. which immerse the board
  • etching solution When etching is performed by spraying, it is preferable that the etching solution is kept at a temperature of 30 to 60 ° C. and is processed at a spray pressure of 0.03 to 0.3 MPa. When etching is performed by dipping, it is preferable to perform the treatment while maintaining the temperature of the etching solution at 30 to 60 ° C.
  • the cap metal layer 4 is etched to form the cap metal wiring pattern 6 by bringing the etching solution into contact with the region where the resist pattern 5 on the surface of the laminated plate 100 is not laminated.
  • Etching solution comes into contact with the exposed portion of the copper layer 3 formed by etching 4 to etch the copper layer 3, thereby forming a copper wiring pattern 7.
  • the etching solution comes into contact with the exposed portion 8 of the metal oxide layer 2 formed by etching the copper layer 3 to etch the metal oxide layer 2, thereby forming a metal oxide wiring pattern 9.
  • the etching solution of the present invention has an etching property with respect to both copper and metal oxide.
  • the metal oxide layer 2 may be subsequently etched. That is, in this embodiment, the contact of the etching solution of the present invention with the copper layer 3 and the contact of the etching solution of the present invention with the metal oxide layer 2 can be performed as a series of steps.
  • the cap metal layer 4 etching process, the copper layer 3 etching process, and the metal oxide layer 2 etching process may be performed in the same etching tank or in different etching tanks. Also good. It is preferable to treat the cap metal layer 4, the copper layer 3, and the metal oxide layer 2 in the same etching tank because the number of etching steps can be reduced and the management of the etching solution is simplified.
  • each of the plurality of etching tanks need not correspond to the etching process of the cap metal layer 4, the copper layer 3, and the metal oxide layer 2.
  • the first etching tank in addition to the cap metal layer 4 and the copper layer 3, a part of the metal oxide layer 2 in the depth direction is etched, and then the metal oxide in the second etching tank.
  • the layer 2 may be further etched to form the metal oxide wiring pattern 9.
  • the cap metal layer is etched with the etching solution of the present invention, but may be etched with an etching solution different from the etching solution of the present invention.
  • the said embodiment demonstrated centering on the example which provided the cap metal layer, in the wiring formation method of this invention, you may use the laminated board in which the cap metal layer is not provided.
  • the laminate was immersed in each etching solution (temperature 45 ° C.) described in Tables 1 and 2 for 90 seconds, and then washed and dried.
  • each etching liquid of Table 1 made the cupric ion and halide ion density
  • Each etching solution in Table 2 uses the same nonionic surfactant as in Example 5 in Table 1, and changes the type and concentration of cupric halide and acid, and the type and concentration of nonionic surfactant. Is. In Table 2, the composition of the etching solution of Example 5 shown in Table 1 and the evaluation results are also shown.
  • each example had good side etching amount and linearity, and the overall evaluation was A, B, or C.
  • each comparative example was inferior to the Examples in terms of both side etching amount and linearity, and the overall evaluation was D.
  • a laminate including a laminated wiring pattern was obtained in the same procedure as described above [Evaluation of laminate comprising PET film / ITO layer / copper layer / nickel-copper alloy layer]. A part of each of the obtained laminates was sampled, and the surface was observed with a scanning electron microscope (model JSM-7000F, manufactured by JEOL Ltd.). As a result, the metal oxidation shown in FIG. The IZO layer between the IZO wiring patterns corresponding to the object wiring pattern 9 has been removed.

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  • Chemical & Material Sciences (AREA)
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  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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PCT/JP2014/053844 2013-04-16 2014-02-19 エッチング液、補給液、及び配線形成方法 WO2014171174A1 (ja)

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KR1020157030028A KR20150142695A (ko) 2013-04-16 2014-02-19 에칭액, 보급액, 및 배선 형성 방법
CN201480021975.0A CN105143515B (zh) 2013-04-16 2014-02-19 蚀刻液及线路形成方法
JP2015512332A JP6354084B2 (ja) 2013-04-16 2014-02-19 エッチング液、補給液、及び配線形成方法

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JP2013085592 2013-04-16

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WO2015146250A1 (ja) * 2014-03-28 2015-10-01 メック株式会社 配線形成方法及びエッチング液
JP2015219336A (ja) * 2014-05-16 2015-12-07 旭化成イーマテリアルズ株式会社 レジスト材料用感光性樹脂組成物及び感光性樹脂積層体
JP2017048462A (ja) * 2016-08-30 2017-03-09 メック株式会社 エッチング液、補給液及び銅配線の形成方法
JP2017048463A (ja) * 2016-08-30 2017-03-09 メック株式会社 エッチング液、補給液及び銅配線の形成方法
US10174428B2 (en) 2015-08-31 2019-01-08 Mec Company Ltd. Etchant, replenishment solution and method for forming copper wiring
CN111809183A (zh) * 2020-07-14 2020-10-23 北京航空航天大学宁波创新研究院 一种铜镓合金的金相腐蚀液以及金相显示方法
JP2022047473A (ja) * 2020-09-11 2022-03-24 カンブリオス フィルム ソリューションズ（シアメン） コーポレーション スタック構造及びタッチセンサ

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CN106521502A (zh) * 2016-10-27 2017-03-22 宜昌南玻显示器件有限公司 用于制作精细铜引线柔性触摸屏的蚀刻液及其制备方法
CN106675185A (zh) * 2017-02-28 2017-05-17 江世妹 一种水性蚀刻油墨
CN107747094B (zh) * 2017-09-28 2020-04-21 侯延辉 一种酸性蚀刻液添加剂及酸性蚀刻液
CN108998795A (zh) * 2018-09-19 2018-12-14 珠海特普力高精细化工有限公司 一种有机酸蚀刻液及其在线路板制造中的使用方法
TW202100452A (zh) * 2019-06-28 2021-01-01 日商Ｆｌｏｓｆｉａ股份有限公司 蝕刻處理方法
KR20210086842A (ko) 2019-12-31 2021-07-09 (주) 케이엠씨 구리 또는 구리 합금용 에칭액
CN112064032B (zh) * 2020-09-11 2022-04-01 武汉迪赛新材料有限公司 一种能提高过氧化氢系蚀刻液使用寿命的补充液
KR20230039882A (ko) 2021-09-14 2023-03-22 (주) 케이엠씨 구리 또는 구리 합금용 에칭액
CN117144366A (zh) * 2023-10-30 2023-12-01 苏州博洋化学股份有限公司 一种铜蚀刻液及其制备方法

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