WO2014168039A1 - 成膜マスク - Google Patents

成膜マスク Download PDF

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Publication number
WO2014168039A1
WO2014168039A1 PCT/JP2014/059523 JP2014059523W WO2014168039A1 WO 2014168039 A1 WO2014168039 A1 WO 2014168039A1 JP 2014059523 W JP2014059523 W JP 2014059523W WO 2014168039 A1 WO2014168039 A1 WO 2014168039A1
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WO
WIPO (PCT)
Prior art keywords
film
metal member
magnetic metal
substrate
linear expansion
Prior art date
Application number
PCT/JP2014/059523
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English (en)
French (fr)
Japanese (ja)
Inventor
水村　通伸
修二 工藤
梶山　康一
Original Assignee
株式会社ブイ・テクノロジー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社ブイ・テクノロジー filed Critical 株式会社ブイ・テクノロジー
Priority to KR1020157024251A priority Critical patent/KR102109071B1/ko
Priority to CN201480020185.0A priority patent/CN105121692B/zh
Publication of WO2014168039A1 publication Critical patent/WO2014168039A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present invention relates to a composite film-formation mask having a structure in which a magnetic metal member and a resin film are in close contact, and in particular, a film-formation mask capable of achieving high definition of a thin film pattern formed while suppressing thermal deformation. It is related to.
  • a conventional film formation mask is a metal plate having a plate thickness of about 30 ⁇ m to 100 ⁇ m wet-etched using a resist mask to form a slit-shaped opening pattern (see, for example, Patent Document 1).
  • the metal plate is wet etched to form a plurality of opening patterns penetrating the metal plate, so that the resolution of the opening pattern is reduced by isotropic etching of the wet etching.
  • isotropic etching of the wet etching Unfortunately, only an opening width several times the plate thickness could be formed.
  • the invar when an invar having a linear expansion coefficient as small as about 1 ⁇ 10 ⁇ 6 / ° C. is used as a metal plate, the invar is difficult to wet-etch, so that the formed opening pattern has an electrode shape of the TFT substrate for organic EL. Together, it could not be formed into a rectangular shape. Therefore, when using Invar as a base material for a mask, generally, as described in Patent Document 1, the opening pattern is often formed in an elongated slit shape.
  • the metal film formation mask 1 is adsorbed by a magnet 15 disposed on the back surface of the substrate 17 as a film formation substrate, and is formed on the film formation surface of the substrate 17. Used in a state of being kept in close contact.
  • the magnetic field strength of the magnet 15 is increased in order to increase the adhesion. If the strength is increased, the portion 22a of the invar 22 may move in the direction intersecting the long axis (X-axis direction), and the opening pattern 6 may be deformed. Therefore, a magnetic field (for example, about 20 mT) whose intensity is weakened to such an extent that the portion 22a of the invar 22 does not move is usually applied.
  • the film formation mask 1 is formed in a direction (X-axis direction) in which the vapor deposition source 20 as a film formation source intersects the long axis (Y-axis) of the slit-shaped opening pattern 6.
  • a vapor deposition apparatus as a film deposition apparatus that performs vapor deposition while moving to
  • only the portion of the film formation mask 1 facing the vapor deposition source 20 is heated by the radiant heat of the vapor deposition source 20.
  • the invar 22 in this portion is thin and elongated, the heat capacity is smaller than that of the substrate 17. Accordingly, the elongated portion 22a between the adjacent opening patterns 6 of the invar 22 is thermally expanded and extends in the major axis direction (Y-axis direction).
  • the restraining force of the invar 22 by the magnet 15 is weak. Accordingly, the portion 22a of the invar 22 heated and extended by the vapor deposition source 20 is peeled off from the vapor deposition surface of the substrate 17 and hangs down as shown in FIG. A gap 23 is formed between the vapor deposition surface and the surface. Therefore, there is a problem that the edge of the thin film pattern 21 is blurred or the shape is enlarged by the wraparound of the vapor deposition material M evaporated from the vapor deposition source 20. In particular, this problem cannot be ignored as the thin film pattern 21 becomes higher in definition, and this is one factor that limits the increase in definition.
  • an object of the present invention is to provide a film formation mask capable of addressing such problems and achieving high definition of a thin film pattern formed while suppressing thermal deformation.
  • a vapor deposition mask according to the present invention has a structure in which a resin film is in close contact with one surface of a sheet-like magnetic metal member having a plurality of slit-like through holes arranged in parallel.
  • a film forming mask provided with a plurality of opening patterns penetrating the film portion in each through-hole, wherein the film has anisotropy different in linear expansion coefficient in two orthogonal axes, and the magnetic metal member
  • the axis having a small linear expansion coefficient of the film is aligned with the direction intersecting the long axis of the through hole.
  • the elongated portions between the adjacent through holes of the magnetic metal member are connected to each other via the film in the direction intersecting the long axis, and the movement in the same direction is restricted. Even if the magnetic field strength of the magnet disposed on the back surface of the substrate is increased to attract the member and bring the mask into close contact with the substrate, the portion of the magnetic metal member does not move. Therefore, by increasing the magnetic field strength of the magnet and increasing the attractive force to the magnetic metal member, even if the magnetic metal member is partially heated and extended by the radiant heat of the film forming source, the above-mentioned portion of the magnetic metal member is not removed from the substrate surface. It can prevent peeling off and sagging.
  • the film since the film has anisotropy in the linear expansion coefficient and the axis having a small linear expansion coefficient of the film is aligned with the direction intersecting the long axis of the through hole of the magnetic metal member, the film in the same direction is aligned. Elongation (thermal deformation) is suppressed, and displacement of the opening pattern in the same direction and shape expansion are suppressed. Therefore, this can also cope with high definition of the thin film pattern.
  • FIG. 1 It is a figure which shows one Embodiment of the film-forming mask by this invention, (a) is a top view, (b) is a principal part expanded sectional view of (a). It is a figure shown about manufacture of the film-forming mask by this invention, and is sectional drawing explaining the manufacturing process of the member for masks. It is a figure shown about manufacture of the film-forming mask by this invention, and is sectional drawing explaining a flame
  • FIG. 1A and 1B are views showing an embodiment of a film-forming mask according to the present invention.
  • FIG. 1A is a plan view
  • FIG. 1B is an enlarged cross-sectional view of a main part of FIG.
  • the film formation mask 1 has a structure in which a magnetic metal member and a resin film are in close contact with each other, and includes a magnetic metal member 2, a resin film 3, and a frame 4.
  • the magnetic metal member 2 holds a film 3 to be described later, and is adsorbed by a magnet (for example, an electromagnet) disposed on the back surface of a deposition target substrate (hereinafter simply referred to as “substrate”).
  • a linear expansion coefficient approximate to the linear expansion coefficient (for example, 5 ⁇ 10 ⁇ 6 / ° C.) of a glass substrate as a substrate, for adhering the film 3 to the film formation surface of the substrate with the film 3 interposed therebetween.
  • a sheet-like member such as an Fe—Ni alloy or an Fe—Ni—Co alloy.
  • a plurality of elongated slit-shaped through holes 5 are arranged in parallel at predetermined intervals.
  • a resin film 3 that transmits visible light is provided in close contact with one surface of the magnetic metal member 2.
  • This film 3 constitutes the main body of the mask, has anisotropy with different linear expansion coefficients in two orthogonal axes (X axis, Y axis), and the long axis of the through hole 5 of the magnetic metal member 2
  • An axis having a small linear expansion coefficient (X axis) is aligned in the intersecting direction.
  • the linear expansion coefficient in the direction of the small linear expansion coefficient (X-axis) is 4 ⁇ 10 ⁇ 6 / ° C. in a temperature range of 50 ° C. to 200 ° C., for example, in accordance with the linear expansion coefficient of the magnetic metal member 2.
  • a resin film of ⁇ 5 ⁇ 10 ⁇ 6 / ° C. is selected.
  • a specific example of such a resin film is a polyimide film manufactured by Toray DuPont Co., Ltd. and Kapton (registered trademark of DuPont, USA) 150EN-A.
  • each of the through holes 5 of the magnetic metal member 2 a plurality of opening patterns 6 that are arranged in the major axis direction of the through holes 5 and penetrate the film 3 are provided.
  • the opening pattern 6 is for selectively passing a film forming material evaporated from, for example, a vapor deposition source as a film forming source to form a thin film pattern having a fixed shape on the substrate.
  • the TFT substrate for organic EL Are formed in the same shape and size as the anode electrode. Alternatively, it may be formed in a size across a plurality of anode electrodes corresponding to the same color.
  • a frame 4 is provided to be joined to the peripheral edge of the magnetic metal member 2.
  • the frame 4 supports the composite sheet of the magnetic metal member 2 and the film 3 in a stretched state, and is a frame-like member having an opening 7 having a size including the plurality of through holes 5.
  • the metal member 2 is formed of the same metal material or a metal material having an approximate linear expansion coefficient.
  • the magnetic metal member 2 and the frame 4 may be joined using an adhesive, but the thin film pattern may be contaminated by the outgas generated by heat during film formation. Is desirable.
  • the film formation mask 1 configured as described above will be described.
  • the film formation mask 1 according to the present invention is generally manufactured through a mask member forming process, a frame bonding process, and an opening pattern forming process.
  • the mask member forming process will be described with reference to FIG.
  • a film 3 having a certain area is obtained by cutting a long polyimide film, for example, having a linear expansion coefficient that is biaxially different and anisotropy and has a thickness of about 10 ⁇ m to 30 ⁇ m. Make it.
  • the polyimide film is, for example, Kapton (registered trademark) 150EN-A manufactured by Toray DuPont.
  • This polyimide film has a linear expansion coefficient of 12 ⁇ 10 ⁇ 6 / ° C. in the longitudinal direction (corresponding to the Y-axis direction in FIG. 1 in the machine conveyance direction) and a linear expansion coefficient in the width direction (corresponding to the X-axis direction in FIG. 1). Is 5 ⁇ 10 ⁇ 6 / ° C., and is produced by stretching in the width direction while applying a predetermined temperature.
  • a seed layer 8 made of a highly conductive metal film is deposited on one surface of the film 3 by a known film formation technique such as vapor deposition, sputtering, or electroless plating. Form with.
  • a known film formation technique such as vapor deposition, sputtering, or electroless plating.
  • the film 3 is polyimide as described above, nickel or the like is preferably used as the seed layer 8. Since copper diffuses into the polyimide, it is not preferable as the seed layer 8 for the polyimide.
  • a photoresist is applied on the seed layer 8 of the film 3 to a thickness of 30 ⁇ m to 50 ⁇ m, for example, and then dried to form a resist layer 9.
  • the resist layer 9 is exposed and developed using a photomask, and the shape of the through holes 5 and the shapes corresponding to the positions where the plurality of elongated slits 5 are formed.
  • a plurality of island patterns 10 having the same dimensions are formed.
  • the island pattern 10 since the slit-shaped through-hole 5 has a long axis in a direction (Y-axis direction) intersecting with an axis (X-axis) direction in which the thermal expansion coefficient of the film 3 is small, the island pattern 10 has a Y-axis. It is elongated in the direction.
  • an island pattern for alignment marks (not shown) is also formed at a predetermined position in a portion outside the effective film formation region including the plurality of island patterns 10.
  • the film 3 is immersed in a plating bath, and as shown in FIG. 2E, the linear expansion coefficient is, for example, 5 ⁇ 10 ⁇ as the magnetic metal member 2 on the seed layer 8 outside the island pattern 10.
  • the linear expansion coefficient is, for example, 5 ⁇ 10 ⁇ as the magnetic metal member 2 on the seed layer 8 outside the island pattern 10.
  • an Fe—Ni alloy, an Fe—Ni—Co alloy or the like of about 6 / ° C. is formed to a thickness of 30 ⁇ m to 50 ⁇ m.
  • the plating bath to be used is appropriately selected from known plating baths according to the magnetic metal member 2 to be formed.
  • the island pattern 10 is peeled off using an organic solvent or a resist-dedicated release agent for the resist, and an opening 11 is formed at a position corresponding to the island pattern 10.
  • the film 3 is passed through the etching solution for the seed layer 8, and the seed layer 8 in the opening 11 is removed by etching as shown in FIG. Further, the film 3 is washed to obtain the mask member 12.
  • the mask member 12 is stretched on a frame-like frame 4 with a constant tension applied in the X-axis and Y-axis directions, and shown in FIG. 3 (b).
  • the magnetic metal member 2 and the frame 4 are welded by irradiating the peripheral edge of the mask member 12 with the laser beam L.
  • the mask member 12 is placed on the XY stage 13 of the laser processing apparatus with the film 3 facing downward.
  • the XY stage 13 has a structure in which the surface of the glass plate 14 is a mounting surface, and a magnet 15 (for example, an electromagnet) is disposed on the back side of the glass plate 14, and is configured to be movable in the X-axis and Y-axis directions. ing. Therefore, the mask member 12 is firmly fixed to the glass plate 14 with the magnetic metal member 2 adsorbed by the magnet 15.
  • a liquid 16 such as ethanol is applied onto the glass plate 14 and the film 3 is preferably brought into close contact with the glass plate 14 by the surface tension of the liquid 16.
  • an opening pattern 6 is formed.
  • the aperture pattern 6 is formed by stepping the XY stage 13 in a predetermined pitch at a predetermined pitch in the XY direction, and using a laser irradiation device (not shown), for example, a laser beam L having a wavelength of 355 nm is applied to the magnetic metal member 2.
  • the light is condensed on the film 3 in the through hole 5 and the film 3 is formed by laser ablation.
  • the cross-sectional shape at the focal point of the focused laser beam L is shaped to have the same shape and size as the opening pattern 6.
  • the focal height position is appropriately controlled so that the focal position of the laser beam L matches the position of the lower surface of the film 3, the shape of the opening end of the opening pattern 6 opposite to the magnetic metal member 2 is designed. Can finish on the street. Therefore, as shown in FIG. 5, if the surface 3a of the film 3 opposite to the magnetic metal member 2 is used as the contact surface with the substrate 17, the thin film pattern 21 having the designed size can be formed by vapor deposition. .
  • the wavelength of the laser beam L is not limited to 355 nm, and may be 266 nm, 254 nm or less as long as the resin film 3 can be ablated.
  • the opening pattern 6 is formed by a plurality of shots while gradually decreasing the focal position of the laser beam L from the surface on the magnetic metal member 2 side of the film 3 toward the opposite surface 3a, FIG. As shown in (b), the opening pattern 6 is formed by tapering the side wall 18 so that the opening area becomes narrower for a while from the surface 3b on the magnetic metal member 2 side of the film 3 toward the surface 3a on the opposite side. can do.
  • the taper angle of the side wall 18 of the opening pattern 6 is adjusted to the maximum incident angle with respect to the mask surface of the molecules of the film forming material (angle formed with the normal line of the mask surface), for example, 20 ° to 50 °, It can prevent more effectively that the opening edge part 6a of the opening pattern 6 in the magnetic metal member 2 side of the film 3 becomes a shadow of film-forming.
  • the alignment mark through-hole of the magnetic metal member 2 is a predetermined coordinate position with respect to the coordinate position of any one of the plurality of opening patterns 6.
  • An alignment mark (not shown) penetrating the inner film 3 for alignment with the substrate 17 is also formed.
  • the film forming apparatus is a vapor deposition apparatus
  • a magnet 15 for example, an electromagnet
  • the film formation mask 1 is disposed with the surface 3a of the film 3 facing the vapor deposition surface of the substrate 17, and both are aligned using alignment marks provided in advance on the substrate 17 and the film formation mask 1. Then, in a state where both are aligned, the magnetic metal member 2 of the film formation mask 1 is attracted by the magnetic force of the magnet 15, and the film formation mask 1 is adhered and fixed to the vapor deposition surface of the substrate 17. At this time, as shown in FIG. 1 (a), the elongated portions 2a located between the adjacent through holes 5 of the magnetic metal member 2 are connected to each other in the X-axis direction via the film 3 and are in the same direction.
  • the magnetic field strength of the magnet 15 is set to 200 mT, which is 10 times stronger than the conventional one.
  • the substrate holder 19 that integrally holds the substrate 17 and the film formation mask 1 is attached to the substrate attachment portion in the vacuum chamber of the vapor deposition apparatus with the vapor deposition surface side of the substrate 17 facing down. It is done.
  • the vapor deposition apparatus used here includes a vapor deposition source 20 having a crucible long in the major axis (Y-axis) direction corresponding to the slit-like through-hole 5 of the film formation mask 1, and the vapor deposition source 20 is connected to the through-hole. It is configured to be movable in a direction (X-axis direction) intersecting the long axis (Y-axis) of the hole 5.
  • vapor deposition on the substrate 17 is performed while the vapor deposition source 20 is moved at a constant speed in the X-axis direction and is positioned immediately above the vapor deposition source 20 at each moving point. This is performed through the opening pattern 6 of the film mask 1. Therefore, as in the prior art, a part of the film-forming mask 1 positioned immediately above the vapor deposition source 20 at each moving time is heated by the radiant heat of the vapor deposition source 20.
  • the magnetic field strength of the magnet 15 is set to 200 mT, which is 10 times stronger than the conventional one, so that the vapor deposition mask 1 is attracted to the substrate 17 by the strong magnetic force of the magnet 15.
  • the elongated portion 2a located between the adjacent through holes 5 of the magnetic metal member 2 extends and peels off from the substrate 17 and hangs down. Therefore, no gap is formed between the film formation mask 1 and the substrate 17, and the wraparound of the vapor deposition material M evaporated from the vapor deposition source 20 to the back side of the mask is suppressed, and the edge of the thin film pattern 21 is blurred or the shape is enlarged. There is no fear of doing it.
  • the film 3 to be used has anisotropy with different linear expansion coefficients in two orthogonal axes, and the film 3 is in a direction (X-axis direction) intersecting the major axis of the through hole 5 of the magnetic metal member 2. Since the axis
  • the linear expansion coefficient of the magnetic metal member 2 and the linear expansion coefficient of the film 3 in the X-axis direction are matched to the linear expansion coefficient of the substrate 17, the X-axis direction of the substrate 17, the magnetic metal member 2 and the film 3 is adjusted. Therefore, the displacement of the thin film pattern 21 formed on the substrate 17 in the X-axis direction can be suppressed.
  • the positional deviation in the Y-axis direction is not a problem because it is a positional deviation between the same colors in the case of an organic EL TFT substrate, for example.
  • the film formation mask 1 includes the frame 4
  • the present invention is not limited to this, and the frame 4 may be omitted.
  • the sheet-shaped film-forming mask 1 is placed on the substrate 17 in a state where the sheet-shaped film-forming mask 1 is stretched at a constant tension on the four sides.
  • the magnet 15 uses the magnetic metal member.
  • the film formation mask 1 may be adhered to the substrate 17 by adsorbing 2.
  • the film 3 has anisotropy in a linear expansion coefficient
  • the linear expansion coefficient with a small coefficient among them is As long as it approximates the linear expansion coefficient of the magnetic metal member 2, it may be another resin film or a multilayer laminated film.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
PCT/JP2014/059523 2013-04-11 2014-03-31 成膜マスク WO2014168039A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020157024251A KR102109071B1 (ko) 2013-04-11 2014-03-31 성막 마스크
CN201480020185.0A CN105121692B (zh) 2013-04-11 2014-03-31 成膜掩模

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013082687A JP6035548B2 (ja) 2013-04-11 2013-04-11 蒸着マスク
JP2013-082687 2013-04-11

Publications (1)

Publication Number Publication Date
WO2014168039A1 true WO2014168039A1 (ja) 2014-10-16

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2014/059523 WO2014168039A1 (ja) 2013-04-11 2014-03-31 成膜マスク

Country Status (5)

Country Link
JP (1) JP6035548B2 (ko)
KR (1) KR102109071B1 (ko)
CN (1) CN105121692B (ko)
TW (1) TWI614354B (ko)
WO (1) WO2014168039A1 (ko)

Cited By (1)

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WO2017168774A1 (ja) * 2016-03-28 2017-10-05 鴻海精密工業股▲ふん▼有限公司 蒸着マスクの製造方法及び製造装置

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JP6769692B2 (ja) * 2015-01-14 2020-10-14 大日本印刷株式会社 蒸着マスクの製造方法、及び有機半導体素子の製造方法
JP6509630B2 (ja) * 2015-05-13 2019-05-08 株式会社アルバック シート状のマスク
KR102466211B1 (ko) * 2016-01-12 2022-11-14 (주)포인트엔지니어링 유기발광다이오드용 마스크 및 유기발광다이오드용 증착장비 및 유기발광다이오드의 제조방법
WO2017138166A1 (ja) 2016-02-10 2017-08-17 鴻海精密工業股▲ふん▼有限公司 蒸着マスクの製造方法、蒸着マスク、および有機半導体素子の製造方法
CN108779549B (zh) * 2016-03-18 2021-04-06 鸿海精密工业股份有限公司 蒸镀遮罩、蒸镀遮罩的制造方法及有机半导体元件的制造方法
WO2017163443A1 (ja) * 2016-03-23 2017-09-28 鴻海精密工業股▲ふん▼有限公司 蒸着マスク、蒸着マスクの製造方法および有機半導体素子の製造方法
JP6341434B2 (ja) * 2016-03-29 2018-06-13 株式会社ブイ・テクノロジー 成膜マスク、その製造方法及び成膜マスクのリペア方法
TWI678824B (zh) * 2016-07-29 2019-12-01 鴻海精密工業股份有限公司 掩膜及其製備方法
CN107686962A (zh) * 2016-08-05 2018-02-13 新日铁住金化学株式会社 蒸镀掩模及其制造方法以及蒸镀掩模用层叠体及其制造方法
JP6949507B2 (ja) * 2016-08-05 2021-10-13 日鉄ケミカル＆マテリアル株式会社 蒸着マスク及びその製造方法並びに蒸着マスク用積層体及びその製造方法
KR102424309B1 (ko) * 2016-10-07 2022-07-25 다이니폰 인사츠 가부시키가이샤 증착 마스크의 제조 방법, 증착 마스크가 배치된 중간 제품 및 증착 마스크
CN108004501A (zh) * 2016-10-27 2018-05-08 鸿富锦精密工业（深圳）有限公司 蒸镀遮罩
CN113737128A (zh) 2017-01-31 2021-12-03 堺显示器制品株式会社 蒸镀掩模、蒸镀掩模及有机半导体元件的制造方法
KR102348212B1 (ko) * 2017-06-23 2022-01-07 주식회사 아모그린텍 박막 기재 제조 방법
CN111511957A (zh) 2017-12-25 2020-08-07 堺显示器制品株式会社 蒸镀掩模、蒸镀方法以及有机el显示装置的制造方法
WO2019130387A1 (ja) 2017-12-25 2019-07-04 堺ディスプレイプロダクト株式会社 蒸着マスク、蒸着方法及び有機ｅｌ表示装置の製造方法
CN111492089A (zh) 2017-12-25 2020-08-04 堺显示器制品株式会社 蒸镀掩模、蒸镀方法以及有机el显示设备的制造方法
JP6645534B2 (ja) * 2018-04-18 2020-02-14 大日本印刷株式会社 フレーム付き蒸着マスク
CN112543817A (zh) * 2018-08-08 2021-03-23 堺显示器制品株式会社 蒸镀掩模、蒸镀掩模的制造方法以及有机半导体元件的制造方法
JP6876172B2 (ja) * 2020-03-03 2021-05-26 堺ディスプレイプロダクト株式会社 蒸着マスクおよび蒸着マスクの製造方法
JP2021155763A (ja) * 2020-03-25 2021-10-07 株式会社ジャパンディスプレイ 蒸着マスクの製造方法

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