WO2014139849A1 - Anzeigevorrichtung - Google Patents
Anzeigevorrichtung Download PDFInfo
- Publication number
- WO2014139849A1 WO2014139849A1 PCT/EP2014/054275 EP2014054275W WO2014139849A1 WO 2014139849 A1 WO2014139849 A1 WO 2014139849A1 EP 2014054275 W EP2014054275 W EP 2014054275W WO 2014139849 A1 WO2014139849 A1 WO 2014139849A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- display device
- pixels
- semiconductor
- metallization layer
- drive circuit
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 178
- 238000001465 metallisation Methods 0.000 claims abstract description 129
- 230000005855 radiation Effects 0.000 claims abstract description 72
- 239000000463 material Substances 0.000 claims description 32
- 238000006243 chemical reaction Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 238000000926 separation method Methods 0.000 description 9
- 230000003595 spectral effect Effects 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000001953 recrystallisation Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000002745 absorbent Effects 0.000 description 3
- 239000002250 absorbent Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000003044 adaptive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
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- 150000001875 compounds Chemical class 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/773,830 US9917077B2 (en) | 2013-03-15 | 2014-03-05 | Display device |
JP2015562025A JP6444901B2 (ja) | 2013-03-15 | 2014-03-05 | 表示装置 |
CN201480015898.8A CN105051901B (zh) | 2013-03-15 | 2014-03-05 | 显示设备 |
DE112014001400.1T DE112014001400A5 (de) | 2013-03-15 | 2014-03-05 | Anzeigevorrichtung |
KR1020157024787A KR102175404B1 (ko) | 2013-03-15 | 2014-03-05 | 디스플레이 장치 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013102667.2 | 2013-03-15 | ||
DE102013102667.2A DE102013102667A1 (de) | 2013-03-15 | 2013-03-15 | Anzeigevorrichtung |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014139849A1 true WO2014139849A1 (de) | 2014-09-18 |
Family
ID=50231173
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2014/054275 WO2014139849A1 (de) | 2013-03-15 | 2014-03-05 | Anzeigevorrichtung |
Country Status (6)
Country | Link |
---|---|
US (1) | US9917077B2 (de) |
JP (1) | JP6444901B2 (de) |
KR (1) | KR102175404B1 (de) |
CN (1) | CN105051901B (de) |
DE (2) | DE102013102667A1 (de) |
WO (1) | WO2014139849A1 (de) |
Cited By (9)
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CN105470359A (zh) * | 2015-12-31 | 2016-04-06 | 天津三安光电有限公司 | 具有内嵌式电极结构的高功率led结构及其制备方法 |
WO2016062464A1 (de) * | 2014-10-21 | 2016-04-28 | Osram Opto Semiconductors Gmbh | Elektronische vorrichtung und verfahren zur herstellung einer elektronischen vorrichtung |
WO2017046000A1 (de) * | 2015-09-18 | 2017-03-23 | Osram Opto Semiconductors Gmbh | Lichtemittierendes bauelement sowie verfahren zur herstellung eines lichtemittierenden bauelements |
KR20180013975A (ko) * | 2015-05-29 | 2018-02-07 | 오스람 옵토 세미컨덕터스 게엠베하 | 광전자 부품 및 광전자 부품을 제조하는 방법 |
DE102016220915A1 (de) * | 2016-10-25 | 2018-04-26 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil |
JP2018520504A (ja) * | 2015-05-29 | 2018-07-26 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 表示デバイス |
EP3345176B1 (de) * | 2015-09-04 | 2019-12-04 | Hong Kong Beida Jade Bird Display Limited | Leuchtdiodenanzeigetafel mit mikrolinsenarray |
EP3345051B1 (de) * | 2015-09-04 | 2020-02-26 | Hong Kong Beida Jade Bird Display Limited | Projektionsanzeigesystem |
WO2022167219A1 (de) * | 2021-02-08 | 2022-08-11 | Ams-Osram International Gmbh | Optoelektronisches halbleiterbauelement mit einer goldschicht im randbereich |
Families Citing this family (19)
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DE102012112302A1 (de) * | 2012-12-14 | 2014-06-18 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung |
DE102015111574A1 (de) * | 2015-07-16 | 2017-01-19 | Osram Opto Semiconductors Gmbh | Optoelektronische Anordnung sowie Verfahren zur Herstellung einer optoelektronischen Anordnung |
US10412369B2 (en) | 2015-07-31 | 2019-09-10 | Dell Products, Lp | Method and apparatus for compensating for camera error in a multi-camera stereo camera system |
DE102015119353B4 (de) * | 2015-11-10 | 2024-01-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
DE102016100351B4 (de) * | 2016-01-11 | 2023-07-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement, Leuchtvorrichtung und Autoscheinwerfer |
JP6428730B2 (ja) * | 2016-08-24 | 2018-11-28 | 日亜化学工業株式会社 | 発光装置 |
FR3055948B1 (fr) * | 2016-09-15 | 2018-09-07 | Valeo Vision | Procede de montage d'un composant electroluminescent matriciel sur un support |
US11094208B2 (en) * | 2016-09-30 | 2021-08-17 | The Boeing Company | Stereo camera system for collision avoidance during aircraft surface operations |
US10629577B2 (en) | 2017-03-16 | 2020-04-21 | Invensas Corporation | Direct-bonded LED arrays and applications |
CN107105141B (zh) * | 2017-04-28 | 2019-06-28 | Oppo广东移动通信有限公司 | 图像传感器、图像处理方法、成像装置和移动终端 |
DE102018118079A1 (de) | 2017-10-09 | 2019-04-11 | Osram Opto Semiconductors Gmbh | Halbleiterlichtquelle, betriebsverfahren und spektrometer |
DE102017124307A1 (de) * | 2017-10-18 | 2019-04-18 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
KR102588293B1 (ko) * | 2017-12-14 | 2023-10-11 | 엘지디스플레이 주식회사 | 발광 소자, 마이크로 디스플레이 장치 |
US11749790B2 (en) * | 2017-12-20 | 2023-09-05 | Lumileds Llc | Segmented LED with embedded transistors |
US11169326B2 (en) | 2018-02-26 | 2021-11-09 | Invensas Bonding Technologies, Inc. | Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects |
DE102018107628B4 (de) * | 2018-03-29 | 2022-09-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierende vorrichtung |
DE102018118355A1 (de) * | 2018-07-30 | 2020-01-30 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und optoelektronisches Halbleiterbauteil |
US20220199879A1 (en) | 2019-04-23 | 2022-06-23 | Kyocera Corporation | Micro-led board and display device |
US11762200B2 (en) | 2019-12-17 | 2023-09-19 | Adeia Semiconductor Bonding Technologies Inc. | Bonded optical devices |
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WO2012039555A2 (en) * | 2010-09-24 | 2012-03-29 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
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DE102008011848A1 (de) | 2008-02-29 | 2009-09-03 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
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KR101039610B1 (ko) * | 2010-10-12 | 2011-06-09 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
US9019440B2 (en) | 2011-01-21 | 2015-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP5966412B2 (ja) | 2011-04-08 | 2016-08-10 | ソニー株式会社 | 画素チップ、表示パネル、照明パネル、表示装置および照明装置 |
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2013
- 2013-03-15 DE DE102013102667.2A patent/DE102013102667A1/de not_active Withdrawn
-
2014
- 2014-03-05 WO PCT/EP2014/054275 patent/WO2014139849A1/de active Application Filing
- 2014-03-05 DE DE112014001400.1T patent/DE112014001400A5/de active Pending
- 2014-03-05 US US14/773,830 patent/US9917077B2/en active Active
- 2014-03-05 JP JP2015562025A patent/JP6444901B2/ja active Active
- 2014-03-05 KR KR1020157024787A patent/KR102175404B1/ko active IP Right Grant
- 2014-03-05 CN CN201480015898.8A patent/CN105051901B/zh active Active
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Cited By (16)
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WO2016062464A1 (de) * | 2014-10-21 | 2016-04-28 | Osram Opto Semiconductors Gmbh | Elektronische vorrichtung und verfahren zur herstellung einer elektronischen vorrichtung |
US10147696B2 (en) | 2014-10-21 | 2018-12-04 | Osram Opto Semiconductors Gmbh | Electronic device and method for producing an electronic device |
KR102575338B1 (ko) * | 2015-05-29 | 2023-09-05 | 에이엠에스-오스람 인터내셔널 게엠베하 | 광전자 부품 및 광전자 부품을 제조하는 방법 |
KR20180013975A (ko) * | 2015-05-29 | 2018-02-07 | 오스람 옵토 세미컨덕터스 게엠베하 | 광전자 부품 및 광전자 부품을 제조하는 방법 |
JP2018520504A (ja) * | 2015-05-29 | 2018-07-26 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 表示デバイス |
US10361249B2 (en) | 2015-05-29 | 2019-07-23 | Osram Opto Semiconductors Gmbh | Display device having a plurality of pixels that can be operated separately from one another |
EP3345176B1 (de) * | 2015-09-04 | 2019-12-04 | Hong Kong Beida Jade Bird Display Limited | Leuchtdiodenanzeigetafel mit mikrolinsenarray |
EP3345051B1 (de) * | 2015-09-04 | 2020-02-26 | Hong Kong Beida Jade Bird Display Limited | Projektionsanzeigesystem |
WO2017046000A1 (de) * | 2015-09-18 | 2017-03-23 | Osram Opto Semiconductors Gmbh | Lichtemittierendes bauelement sowie verfahren zur herstellung eines lichtemittierenden bauelements |
CN108028261A (zh) * | 2015-09-18 | 2018-05-11 | 欧司朗光电半导体有限公司 | 发光器件以及用于制造发光器件的方法 |
US10504879B2 (en) | 2015-09-18 | 2019-12-10 | Osram Opto Semiconductors Gmbh | Light-emitting component and method for producing a light-emitting component |
CN105470359A (zh) * | 2015-12-31 | 2016-04-06 | 天津三安光电有限公司 | 具有内嵌式电极结构的高功率led结构及其制备方法 |
DE102016220915A1 (de) * | 2016-10-25 | 2018-04-26 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil |
US11557700B2 (en) | 2016-10-25 | 2023-01-17 | Osram Oled Gmbh | Method of producing optoelectronic semiconductor components and an optoelectronic semiconductor component |
US11018283B2 (en) | 2016-10-25 | 2021-05-25 | Osram Oled Gmbh | Method of producing optoelectronic semiconductor components and an optoelectronic semiconductor component |
WO2022167219A1 (de) * | 2021-02-08 | 2022-08-11 | Ams-Osram International Gmbh | Optoelektronisches halbleiterbauelement mit einer goldschicht im randbereich |
Also Published As
Publication number | Publication date |
---|---|
US20160027765A1 (en) | 2016-01-28 |
KR20150130293A (ko) | 2015-11-23 |
CN105051901A (zh) | 2015-11-11 |
US9917077B2 (en) | 2018-03-13 |
DE112014001400A5 (de) | 2015-12-03 |
JP6444901B2 (ja) | 2018-12-26 |
DE102013102667A1 (de) | 2014-10-02 |
KR102175404B1 (ko) | 2020-11-06 |
CN105051901B (zh) | 2018-08-31 |
JP2016513876A (ja) | 2016-05-16 |
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