JP6444901B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP6444901B2 JP6444901B2 JP2015562025A JP2015562025A JP6444901B2 JP 6444901 B2 JP6444901 B2 JP 6444901B2 JP 2015562025 A JP2015562025 A JP 2015562025A JP 2015562025 A JP2015562025 A JP 2015562025A JP 6444901 B2 JP6444901 B2 JP 6444901B2
- Authority
- JP
- Japan
- Prior art keywords
- display device
- semiconductor
- metallization layer
- pixels
- driver circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims description 179
- 238000001465 metallisation Methods 0.000 claims description 126
- 230000005855 radiation Effects 0.000 claims description 70
- 239000000463 material Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 7
- 239000000969 carrier Substances 0.000 claims description 5
- 238000002310 reflectometry Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 180
- 238000006243 chemical reaction Methods 0.000 description 18
- 230000003595 spectral effect Effects 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000001427 coherent effect Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
本特許出願は、独国特許出願第102013102667.2号の優先権を主張し、この文書の開示内容は参照によって本明細書に組み込まれている。
Claims (19)
- 半導体積層体(2)を備えた少なくとも1つの半導体ボディと、ドライバ回路(54)とを有する表示装置(1)であって、前記半導体積層体(2)が、放射を生成する目的で設けられている活性領域(20)と、複数のピクセル(2a,2b)を備えており、
− 前記ドライバ回路(54)が、それぞれが少なくとも1つのピクセル(2a,2b)を制御する目的で設けられている複数のスイッチ(55)、を備えており、
− 前記ドライバ回路と前記半導体ボディとの間に、第1のメタライゼーション層(31)と、前記第1のメタライゼーション層から電気的に絶縁されている第2のメタライゼーション層(32)とが配置されており、
− 前記第1のメタライゼーション層および前記第2のメタライゼーション層の少なくとも1つが、前記ピクセルの少なくとも1つに導電接続されており、
− 前記第1のメタライゼーション層および前記第2のメタライゼーション層が、前記表示装置の平面視において、(i)前記ピクセルの1つと重なるすべての領域、および(ii)2つの隣り合うピクセルの間に配置されているすべての領域において、前記ドライバ回路が前記メタライゼーション層のうちの少なくとも一方によって覆われるように、互いに重なり合うように配置されており、
前記第2のメタライゼーション層が、前記半導体積層体に隣接しており、2つの隣り合うピクセルの間で分割されており、
前記第1のメタライゼーション層が、各ピクセルごとに切取り部を備えており、前記切取り部において、前記第2のメタライゼーション層が、関連付けられる前記ドライバ回路のスイッチに導電接続されている、
表示装置(1)。 - 前記第1のメタライゼーション層および前記第2のメタライゼーション層が、前記ピクセルの少なくとも1つに導電接続されている、
請求項1に記載の表示装置。 - 前記第1のメタライゼーション層および前記第2のメタライゼーション層は、活性領域において生成される放射に対する少なくとも70%の反射率を有する、請求項1または請求項2に記載の表示装置。
- 前記第1のメタライゼーション層が、複数のピクセルの共通のコンタクトを形成している、
請求項1から請求項3のいずれかに記載の表示装置。 - 前記第2のメタライゼーション層が、前記表示装置の平面視において、前記少なくとも1つの半導体ボディによって完全に覆われている、
請求項1から請求項4のいずれかに記載の表示装置。 - 前記切取り部が、リング形状の輪郭を備えている、
請求項5に記載の表示装置。 - 前記表示装置がキャリア(5)を備えており、前記キャリア(5)の上に少なくとも1つの半導体ボディが配置されている、
請求項1から請求項6のいずれかに記載の表示装置。 - 前記ドライバ回路が前記キャリアに組み込まれている、
請求項7に記載の表示装置。 - 前記ドライバ回路が、前記少なくとも1つの半導体ボディと前記キャリアとの間に配置されている、
請求項7に記載の表示装置。 - 前記ドライバ回路が、前記半導体ボディの上に堆積されている、
請求項9に記載の表示装置。 - 前記ドライバ回路が、多結晶半導体材料を含む、
請求項9または請求項10に記載の表示装置。 - それぞれが複数のピクセル(2a,2b)を有する複数の半導体ボディ(2)が、前記キャリアの上に配置されている、
請求項7から請求項11のいずれかに記載の表示装置。 - 前記表示装置の平面視において、前記メタライゼーション層のうちの少なくとも一方が前記半導体ボディの1つと重なる任意の点、または2つの隣り合う半導体ボディの間に配置されている任意の点において、前記キャリアが前記メタライゼーション層のうちの少なくとも一方によって覆われるように、前記第1のメタライゼーション層と前記第2のメタライゼーション層が互いに重なり合うように配置されている、
請求項12に記載の表示装置。 - 前記半導体積層体の成長基板(28)が除去されており、前記キャリアが前記半導体積層体を機械的に安定化させている、
請求項7から請求項13のいずれかに記載の表示装置。 - − 前記活性領域(20)が、第1の半導体層(21)と第2の半導体層(22)との間に配置されており、
− 前記半導体積層体(2)が少なくとも1つの凹部(25)を備えており、前記少なくとも1つの凹部(25)が、前記ドライバ回路の側の前記半導体積層体(2)の裏面(27)から前記活性領域(20)を貫いて前記第1の半導体層(21)の中まで達しており、前記第1の半導体層(21)に電気的に接触する目的で設けられており、
前記第2のメタライゼーション層が、前記半導体積層体に隣接しており、前記表示装置の平面視において、前記少なくとも1つの半導体ボディによって完全に覆われており、
前記第1のメタライゼーション層は、前記表示装置の平面視において、前記ピクセルの間の中間領域を完全に覆っている、
請求項1から請求項14のいずれかに記載の表示装置。 - 前記ピクセルが、前記ドライバ回路とは反対側の放射出口面(29)から電気的に接触されている、
請求項1から請求項14のいずれかに記載の表示装置。 - 前記活性領域が複数のピクセルにわたり連続的に延在している、
請求項1から請求項16のいずれかに記載の表示装置。 - 前記活性領域が、それぞれがピクセルを形成している複数のセグメント(20a,20b)に分割されており、前記セグメントが、共通の半導体積層体から形成されている、
請求項1から請求項16のいずれかに記載の表示装置。 - 放射変換要素(6)が、前記ドライバ回路とは反対側の前記半導体積層体の面に配置されている、
請求項1から請求項18のいずれかに記載の表示装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013102667.2 | 2013-03-15 | ||
DE102013102667.2A DE102013102667A1 (de) | 2013-03-15 | 2013-03-15 | Anzeigevorrichtung |
PCT/EP2014/054275 WO2014139849A1 (de) | 2013-03-15 | 2014-03-05 | Anzeigevorrichtung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016513876A JP2016513876A (ja) | 2016-05-16 |
JP6444901B2 true JP6444901B2 (ja) | 2018-12-26 |
Family
ID=50231173
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015562025A Active JP6444901B2 (ja) | 2013-03-15 | 2014-03-05 | 表示装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9917077B2 (ja) |
JP (1) | JP6444901B2 (ja) |
KR (1) | KR102175404B1 (ja) |
CN (1) | CN105051901B (ja) |
DE (2) | DE102013102667A1 (ja) |
WO (1) | WO2014139849A1 (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012112302A1 (de) * | 2012-12-14 | 2014-06-18 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung |
DE102014115319A1 (de) * | 2014-10-21 | 2016-04-21 | Osram Opto Semiconductors Gmbh | Elektronische Vorrichtung und Verfahren zur Herstellung einer elektronischen Vorrichtung |
DE102015108532A1 (de) | 2015-05-29 | 2016-12-01 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung mit einer Mehrzahl getrennt voneinander betreibbarer Bildpunkte |
DE102015108545A1 (de) * | 2015-05-29 | 2016-12-01 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
DE102015111574A1 (de) * | 2015-07-16 | 2017-01-19 | Osram Opto Semiconductors Gmbh | Optoelektronische Anordnung sowie Verfahren zur Herstellung einer optoelektronischen Anordnung |
US10412369B2 (en) | 2015-07-31 | 2019-09-10 | Dell Products, Lp | Method and apparatus for compensating for camera error in a multi-camera stereo camera system |
US10032757B2 (en) * | 2015-09-04 | 2018-07-24 | Hong Kong Beida Jade Bird Display Limited | Projection display system |
US10304811B2 (en) * | 2015-09-04 | 2019-05-28 | Hong Kong Beida Jade Bird Display Limited | Light-emitting diode display panel with micro lens array |
DE102015115812A1 (de) * | 2015-09-18 | 2017-03-23 | Osram Opto Semiconductors Gmbh | Bauelement sowie Verfahren zur Herstellung eines Bauelements |
DE102015119353B4 (de) * | 2015-11-10 | 2024-01-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
CN105470359B (zh) * | 2015-12-31 | 2018-05-08 | 天津三安光电有限公司 | 具有内嵌式电极结构的高功率led结构及其制备方法 |
DE102016100351B4 (de) * | 2016-01-11 | 2023-07-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement, Leuchtvorrichtung und Autoscheinwerfer |
JP6428730B2 (ja) * | 2016-08-24 | 2018-11-28 | 日亜化学工業株式会社 | 発光装置 |
FR3055948B1 (fr) * | 2016-09-15 | 2018-09-07 | Valeo Vision | Procede de montage d'un composant electroluminescent matriciel sur un support |
US11094208B2 (en) * | 2016-09-30 | 2021-08-17 | The Boeing Company | Stereo camera system for collision avoidance during aircraft surface operations |
DE102016220915A1 (de) * | 2016-10-25 | 2018-04-26 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil |
US10629577B2 (en) | 2017-03-16 | 2020-04-21 | Invensas Corporation | Direct-bonded LED arrays and applications |
CN107105141B (zh) * | 2017-04-28 | 2019-06-28 | Oppo广东移动通信有限公司 | 图像传感器、图像处理方法、成像装置和移动终端 |
DE102018118079A1 (de) | 2017-10-09 | 2019-04-11 | Osram Opto Semiconductors Gmbh | Halbleiterlichtquelle, betriebsverfahren und spektrometer |
DE102017124307A1 (de) * | 2017-10-18 | 2019-04-18 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
KR102588293B1 (ko) * | 2017-12-14 | 2023-10-11 | 엘지디스플레이 주식회사 | 발광 소자, 마이크로 디스플레이 장치 |
US11749790B2 (en) * | 2017-12-20 | 2023-09-05 | Lumileds Llc | Segmented LED with embedded transistors |
US11169326B2 (en) | 2018-02-26 | 2021-11-09 | Invensas Bonding Technologies, Inc. | Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects |
DE102018107628B4 (de) * | 2018-03-29 | 2022-09-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierende vorrichtung |
DE102018118355A1 (de) * | 2018-07-30 | 2020-01-30 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und optoelektronisches Halbleiterbauteil |
US20220199879A1 (en) | 2019-04-23 | 2022-06-23 | Kyocera Corporation | Micro-led board and display device |
US11762200B2 (en) | 2019-12-17 | 2023-09-19 | Adeia Semiconductor Bonding Technologies Inc. | Bonded optical devices |
DE102021201131A1 (de) * | 2021-02-08 | 2022-08-11 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches halbleiterbauelement mit einer goldschicht im randbereich |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5893721A (en) | 1997-03-24 | 1999-04-13 | Motorola, Inc. | Method of manufacture of active matrix LED array |
JP2002141492A (ja) * | 2000-10-31 | 2002-05-17 | Canon Inc | 発光ダイオードディスプレイパネル及びその製造方法 |
CA2418387C (en) * | 2003-02-04 | 2008-06-03 | Magneto-Inductive Systems Limited | Passive inductive switch |
JP2009175198A (ja) | 2008-01-21 | 2009-08-06 | Sony Corp | El表示パネル及び電子機器 |
US8643034B2 (en) * | 2008-02-29 | 2014-02-04 | Osram Opto Semiconductors Gmbh | Monolithic, optoelectronic semiconductor body and method for the production thereof |
DE102008011848A1 (de) | 2008-02-29 | 2009-09-03 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
US8008683B2 (en) * | 2008-10-22 | 2011-08-30 | Samsung Led Co., Ltd. | Semiconductor light emitting device |
DE102008062933B4 (de) * | 2008-12-23 | 2021-05-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische Projektionsvorrichtung |
KR20120038539A (ko) * | 2009-07-30 | 2012-04-23 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 픽셀화된 led |
DE102009047788A1 (de) | 2009-09-30 | 2011-03-31 | Osram Opto Semiconductors Gmbh | Beleuchtungseinrichtung für eine Kamera sowie Verfahren zum Betrieb derselben |
KR101106151B1 (ko) * | 2009-12-31 | 2012-01-20 | 서울옵토디바이스주식회사 | 발광 소자 및 그것을 제조하는 방법 |
KR101142965B1 (ko) * | 2010-09-24 | 2012-05-08 | 서울반도체 주식회사 | 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
KR101039610B1 (ko) * | 2010-10-12 | 2011-06-09 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
US9019440B2 (en) | 2011-01-21 | 2015-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP5966412B2 (ja) | 2011-04-08 | 2016-08-10 | ソニー株式会社 | 画素チップ、表示パネル、照明パネル、表示装置および照明装置 |
US8497146B2 (en) * | 2011-08-25 | 2013-07-30 | Micron Technology, Inc. | Vertical solid-state transducers having backside terminals and associated systems and methods |
DE102011056888A1 (de) | 2011-12-22 | 2013-06-27 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung |
DE102012112302A1 (de) | 2012-12-14 | 2014-06-18 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung |
-
2013
- 2013-03-15 DE DE102013102667.2A patent/DE102013102667A1/de not_active Withdrawn
-
2014
- 2014-03-05 WO PCT/EP2014/054275 patent/WO2014139849A1/de active Application Filing
- 2014-03-05 DE DE112014001400.1T patent/DE112014001400A5/de active Pending
- 2014-03-05 US US14/773,830 patent/US9917077B2/en active Active
- 2014-03-05 JP JP2015562025A patent/JP6444901B2/ja active Active
- 2014-03-05 KR KR1020157024787A patent/KR102175404B1/ko active IP Right Grant
- 2014-03-05 CN CN201480015898.8A patent/CN105051901B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20160027765A1 (en) | 2016-01-28 |
KR20150130293A (ko) | 2015-11-23 |
CN105051901A (zh) | 2015-11-11 |
US9917077B2 (en) | 2018-03-13 |
DE112014001400A5 (de) | 2015-12-03 |
WO2014139849A1 (de) | 2014-09-18 |
DE102013102667A1 (de) | 2014-10-02 |
KR102175404B1 (ko) | 2020-11-06 |
CN105051901B (zh) | 2018-08-31 |
JP2016513876A (ja) | 2016-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6444901B2 (ja) | 表示装置 | |
US10461120B2 (en) | Display device and method for producing a display device | |
KR102112113B1 (ko) | 디스플레이 장치 및 디스플레이 장치의 제조 방법 | |
TWI385823B (zh) | 光電組件及製造複數個光電組件之方法 | |
JP5591487B2 (ja) | 発光装置、これを含むパッケージとシステム、およびその製造方法 | |
TWI433309B (zh) | 發出輻射之半導體晶片 | |
TWI379439B (en) | Method of manufacturing a plurality of optoelectronic components and optoelectronic component | |
TWI505493B (zh) | 光電半導體晶片及製造光電半導體晶片之方法 | |
KR101989212B1 (ko) | 광전자 반도체 칩, 그리고 광전자 반도체 칩의 제조 방법 | |
KR20150097556A (ko) | 광전 반도체 칩을 제조하기 위한 방법 및 광전 반도체 칩 | |
JP2011049600A (ja) | 光電素子および光電素子の製造方法 | |
KR101548442B1 (ko) | 캐리어 기판 및 반도체칩 제조 방법 | |
KR20160025456A (ko) | 발광 다이오드 및 그 제조 방법 | |
US20130236997A1 (en) | Method of fabricating light emitting device | |
US20180145225A1 (en) | Optoelectronic semiconductor chip and optoelectronic module | |
KR101601995B1 (ko) | 복사 방출 박막 반도체칩 및 그 제조 방법 | |
KR20150035111A (ko) | 주변 발광부를 구비하는 발광다이오드 칩 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160831 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160927 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161222 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170425 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20170919 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171227 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20180110 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20180330 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180926 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181128 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6444901 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |