JP2018520504A - 表示デバイス - Google Patents
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- JP2018520504A JP2018520504A JP2017559097A JP2017559097A JP2018520504A JP 2018520504 A JP2018520504 A JP 2018520504A JP 2017559097 A JP2017559097 A JP 2017559097A JP 2017559097 A JP2017559097 A JP 2017559097A JP 2018520504 A JP2018520504 A JP 2018520504A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 110
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 4
- 238000000926 separation method Methods 0.000 description 22
- 230000005855 radiation Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 238000002955 isolation Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- CFZXDJWFRVEWSR-BUHFOSPRSA-N indigo carmine (acid form) Chemical compound N/1C2=CC=C(S(O)(=O)=O)C=C2C(=O)C\1=C1/NC2=CC=C(S(=O)(=O)O)C=C2C1=O CFZXDJWFRVEWSR-BUHFOSPRSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
Abstract
Description
1a,1b,1c ピクセル
10a 第1の主要面
10b 第2の主要面
10c 縁部領域
3 半導体積層体
31 第1の半導体層
33 活性層
35 第2の半導体層
51 第1のコンタクト構造
51a,51b,51c 第1のコンタクト
53 分離構造
55 第2のコンタクト構造
55a,55b 第2のコンタクト
7a,7b 陥凹部
7x 分離ウェブ
9 キャリア
91 分離構造
93a,93b,93c スイッチ
100 格子
100x ノーダルポイント
Claims (13)
- 互いに別個に作動させることが可能な複数のピクセル(1a、1b、1c)を備えた表示デバイス(1)であって、
第1の半導体層(31)、活性層(33)および第2の半導体層(35)を含み、電磁放射を発生させる半導体積層体(3)と、
前記第1の半導体層(31)に接触し、第1のコンタクト(51a、51b、51c)を有する第1のコンタクト構造(51)と、
前記第2の半導体層(35)に接触し、第2のコンタクト(55a、55b)を有する第2のコンタクト構造(55)と、
を備え、
前記第1のコンタクトはそれぞれ、互いに別個に作動させることが可能であり、前記第1の半導体層(31)に沿って横方向に中断されずに延在し、当該第1のコンタクトの輪郭によって横方向でそれぞれのピクセル(1a、1b、1c)の境界を定め、
前記半導体積層体(3)および前記第1のコンタクト構造(51)は、それぞれのピクセル(1a、1b、1c)と横方向で隣接する少なくとも1つの陥凹部(7a、7b)を有し、
前記陥凹部は、前記第1のコンタクト構造(51)、前記第1の半導体層(31)および前記活性層(33)を通って、前記第2の半導体層(35)内へと延在し、
前記第2のコンタクト(55a、55b)は、前記半導体積層体(3)のうち前記第1のコンタクト構造(51)に面する側から前記少なくとも1つの陥凹部(7a、7b)を通って延在する、
表示デバイス(1)。 - 前記第1および第2のコンタクト(51a、51b、51c、55a、55b)はそれぞれ、前記第1および第2の半導体層(31、35)と直接接触している、
請求項1に記載の表示デバイス(1)。 - いくつかの第2のコンタクト(55a、55b)は、少なくとも1つのピクセル(1a、1b、1c)と関連付けられ、それぞれのピクセル(1a、1b、1c)に冗長に接触する、
請求項1または2に記載の表示デバイス(1)。 - 前記第2のコンタクト(55a、55b)の少なくとも1つは、いくつかの隣接したピクセル(1a、1b、1c)と横方向で隣接して配置され、前記いくつかの隣接したピクセル(1a、1b、1c)に接触するように構成される、
請求項1〜3のいずれか一項に記載の表示デバイス(1)。 - 前記ピクセル(1a、1b、1c)は、格子の形態で互いに横方向に分離して配置され、
前記第2のコンタクト(55a、55b)の少なくとも1つは、前記格子(100)のノーダルポイント(100x)に配置される、
請求項1〜4のいずれか一項に記載の表示デバイス(1)。 - 前記第2のコンタクト(55a、55b)の1つは、前記格子(100)の全てのノーダルポイント(100x)に配置される、
請求項5に記載の表示デバイス(1)。 - 前記第2のコンタクト(55a、55b)の1つは、前記格子(100)の横方向に連続したノーダルポイント(100x)の1つおきに配置される、
請求項5に記載の表示デバイス(1)。 - 前記第2のコンタクト(55a、55b)の少なくとも1つは、前記表示デバイス(1)の横縁部領域(10c)に隣接するピクセル(1a、1b、1c)と関連付けられ、前記横縁部領域(10c)に沿って平行に延在して構成される、
請求項1〜7のいずれか一項に記載の表示デバイス(1)。 - ピクセル(1a、1b、1c)と関連付けられた第2のコンタクト(55a、55b)の横方向延長部はそれぞれ、前記それぞれのピクセル(1a、1b、1c)と関連付けられた第2のコンタクト(55a、55b)の数に依存する、
請求項1〜8のいずれか一項に記載の表示デバイス(1)。 - 前記第2のコンタクト(55a、55b)の少なくとも1つは、前記表示デバイス(1)の横縁部領域(10c)と隣接するピクセル(1a、1b、1c)と関連付けられ、
前記それぞれの第2のコンタクト(55a、55b)は、所定の間隔を有して、前記表示デバイス(1)の横方向内部にずれて配置される、
請求項1〜9のいずれか一項に記載の表示デバイス(1)。 - 前記第2のコンタクト(55a、55b)の少なくとも1つの横方向延長部は、円形に構成される、
請求項1〜10のいずれか一項に記載の表示デバイス(1)。 - 前記第2のコンタクト(55a、55b)の少なくとも1つは、ピクセル(1a、1b、1c)を横方向で囲む、
請求項1〜11のいずれか一項に記載の表示デバイス(1)。 - 前記第2のコンタクト構造(55)は、格子の形態で構成される、
請求項1〜12のいずれか一項に記載の表示デバイス(1)。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102015108532.1A DE102015108532A1 (de) | 2015-05-29 | 2015-05-29 | Anzeigevorrichtung mit einer Mehrzahl getrennt voneinander betreibbarer Bildpunkte |
DE102015108532.1 | 2015-05-29 | ||
PCT/EP2016/060554 WO2016192939A1 (de) | 2015-05-29 | 2016-05-11 | Anzeigevorrichtung mit einer mehrzahl getrennt voneinander betreibbarer bildpunkte |
Publications (2)
Publication Number | Publication Date |
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JP2018520504A true JP2018520504A (ja) | 2018-07-26 |
JP6688320B2 JP6688320B2 (ja) | 2020-04-28 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017559097A Active JP6688320B2 (ja) | 2015-05-29 | 2016-05-11 | 表示デバイス |
Country Status (7)
Country | Link |
---|---|
US (1) | US10361249B2 (ja) |
JP (1) | JP6688320B2 (ja) |
KR (2) | KR20230070068A (ja) |
CN (1) | CN107636832A (ja) |
DE (2) | DE102015108532A1 (ja) |
TW (1) | TWI590435B (ja) |
WO (1) | WO2016192939A1 (ja) |
Cited By (2)
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JP2019204823A (ja) * | 2018-05-21 | 2019-11-28 | シャープ株式会社 | マイクロ発光素子、画像表示素子およびその形成方法 |
JP2022525958A (ja) * | 2019-03-19 | 2022-05-20 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 複数の画素と分離要素とを備えた光電子半導体デバイスおよび該光電子半導体デバイスを製造するための方法 |
Families Citing this family (21)
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DE102015108545A1 (de) * | 2015-05-29 | 2016-12-01 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
DE102015119353B4 (de) | 2015-11-10 | 2024-01-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
DE102016100351B4 (de) | 2016-01-11 | 2023-07-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement, Leuchtvorrichtung und Autoscheinwerfer |
DE102016106831A1 (de) | 2016-04-13 | 2017-10-19 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
DE102016123013A1 (de) | 2016-11-29 | 2018-05-30 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung mit einer Mehrzahl getrennt voneinander betreibbarer Bildpunkte |
DE102017102247A1 (de) | 2017-02-06 | 2018-08-09 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Herstellungsverfahren hierfür |
BR112020009088B1 (pt) | 2017-11-08 | 2023-12-12 | Seoul Viosys Co., Ltd | Unidade de led para exibição e aparelho de exibição utilizando a mesma |
US10892297B2 (en) | 2017-11-27 | 2021-01-12 | Seoul Viosys Co., Ltd. | Light emitting diode (LED) stack for a display |
US11282981B2 (en) | 2017-11-27 | 2022-03-22 | Seoul Viosys Co., Ltd. | Passivation covered light emitting unit stack |
US11527519B2 (en) | 2017-11-27 | 2022-12-13 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
US10892296B2 (en) * | 2017-11-27 | 2021-01-12 | Seoul Viosys Co., Ltd. | Light emitting device having commonly connected LED sub-units |
US10748881B2 (en) | 2017-12-05 | 2020-08-18 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
US10886327B2 (en) | 2017-12-14 | 2021-01-05 | Seoul Viosys Co., Ltd. | Light emitting stacked structure and display device having the same |
US11552057B2 (en) | 2017-12-20 | 2023-01-10 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
US11522006B2 (en) | 2017-12-21 | 2022-12-06 | Seoul Viosys Co., Ltd. | Light emitting stacked structure and display device having the same |
US11552061B2 (en) | 2017-12-22 | 2023-01-10 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
US11114499B2 (en) | 2018-01-02 | 2021-09-07 | Seoul Viosys Co., Ltd. | Display device having light emitting stacked structure |
US10784240B2 (en) | 2018-01-03 | 2020-09-22 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
DE102018106970A1 (de) | 2018-03-23 | 2019-09-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
CN110676280A (zh) * | 2018-05-30 | 2020-01-10 | 鸿富锦精密工业(深圳)有限公司 | 显示面板及显示面板制作方法 |
KR102469704B1 (ko) * | 2020-04-23 | 2022-11-22 | 주식회사 썬다이오드코리아 | 경사진 측면을 가지는 마이크로 디스플레이의 화소 |
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- 2016-05-11 DE DE112016002412.6T patent/DE112016002412B4/de active Active
- 2016-05-11 US US15/578,239 patent/US10361249B2/en active Active
- 2016-05-11 JP JP2017559097A patent/JP6688320B2/ja active Active
- 2016-05-11 CN CN201680027611.2A patent/CN107636832A/zh active Pending
- 2016-05-11 KR KR1020237015584A patent/KR20230070068A/ko not_active Application Discontinuation
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019204823A (ja) * | 2018-05-21 | 2019-11-28 | シャープ株式会社 | マイクロ発光素子、画像表示素子およびその形成方法 |
JP7105612B2 (ja) | 2018-05-21 | 2022-07-25 | シャープ株式会社 | 画像表示素子およびその形成方法 |
JP2022525958A (ja) * | 2019-03-19 | 2022-05-20 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 複数の画素と分離要素とを備えた光電子半導体デバイスおよび該光電子半導体デバイスを製造するための方法 |
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CN107636832A (zh) | 2018-01-26 |
WO2016192939A1 (de) | 2016-12-08 |
DE112016002412B4 (de) | 2021-09-09 |
KR20180013904A (ko) | 2018-02-07 |
KR20230070068A (ko) | 2023-05-19 |
US10361249B2 (en) | 2019-07-23 |
TWI590435B (zh) | 2017-07-01 |
JP6688320B2 (ja) | 2020-04-28 |
US20180166499A1 (en) | 2018-06-14 |
DE112016002412A5 (de) | 2018-03-08 |
TW201703246A (zh) | 2017-01-16 |
KR102531660B1 (ko) | 2023-05-12 |
DE102015108532A1 (de) | 2016-12-01 |
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