WO2014129582A1 - 水酸基を有するアリールスルホン酸塩含有レジスト下層膜形成組成物 - Google Patents
水酸基を有するアリールスルホン酸塩含有レジスト下層膜形成組成物 Download PDFInfo
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- WO2014129582A1 WO2014129582A1 PCT/JP2014/054168 JP2014054168W WO2014129582A1 WO 2014129582 A1 WO2014129582 A1 WO 2014129582A1 JP 2014054168 W JP2014054168 W JP 2014054168W WO 2014129582 A1 WO2014129582 A1 WO 2014129582A1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0277—Electrolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
Definitions
- the present invention relates to a crosslinking catalyst for a resist underlayer film forming composition for lithography effective at the time of processing a semiconductor substrate, a resist underlayer film forming composition containing the same, a resist pattern forming method using the resist underlayer film forming composition, and
- the present invention relates to a method for manufacturing a semiconductor device.
- a thin film of a photoresist composition is formed on a substrate to be processed such as a silicon wafer, and irradiated with actinic rays such as ultraviolet rays through a mask pattern on which a semiconductor device pattern is drawn, and developed.
- actinic rays such as ultraviolet rays
- This is a processing method for etching a substrate to be processed such as a silicon wafer using the obtained photoresist pattern as a protective film.
- EUV lithography and EB lithography generally do not require a specific anti-reflection film because they do not cause diffuse reflection or standing wave from the substrate, but an auxiliary film for the purpose of improving the resolution and adhesion of the resist pattern As such, the resist underlayer film has begun to be widely studied.
- the resist underlayer film formed between the photoresist and the substrate to be processed is generally formed on the substrate to be processed in order to suppress mixing with the resist laminated on the upper layer. After the composition is applied, it is formed as a thermosetting cross-linked film that does not cause mixing with the resist through a baking process.
- a thermosetting film in a resist underlayer film forming composition in addition to a polymer resin as a main component, a crosslinking compound (crosslinking agent) and a catalyst for promoting a crosslinking reaction (crosslinking catalyst) ) Is blended.
- a crosslinking compound crosslinking agent
- a catalyst for promoting a crosslinking reaction crosslinking catalyst
- a thermal acid generator such as a sulfonic acid compound, a carboxylic acid compound, or a sulfonic acid ester is mainly used.
- arylsulfonates eg, pyridinium-p-toluenesulfonate
- thermal acid generators widely used as a crosslinking catalyst for resist underlayer film forming compositions.
- the film-forming composition is neutral or weakly acidic, and the generation of a strong acid necessary for the crosslinking reaction requires thermal decomposition. That is, such aryl sulfonates are low molecular weight compounds that do not proceed sufficiently when the generation efficiency of the acid acting as a catalyst for the crosslinking reaction is low at the film formation temperature (baking temperature) of the resist underlayer film. It is easy to invite sublimation.
- aryl sulfonic acids for example, p-toluene sulfonic acid
- aryl sulfonic acids widely used as a cross-linking catalyst in the same manner exhibit strong acidity in the resist underlayer film forming composition, and thus can effectively act as a cross-linking catalyst.
- these aryl sulfonic acids are strong acids, they are likely to interact with the polymer resin, the crosslinking agent, etc. in the resist underlayer film forming composition, and the quality deterioration (aging) of the resist underlayer film purification composition may occur. There is a concern to invite.
- the present invention has been made on the basis of solving such problems, and effectively suppresses sublimates generated when a conventional resist underlayer film is formed, and reduces the aging of the resist underlayer film forming composition.
- a crosslinking catalyst for resist underlayer film forming composition resist underlayer film forming composition containing the same, resist pattern forming method using the resist underlayer film forming composition, and semiconductor device manufacturing method For the purpose.
- each R 1 is a substituent of a hydrogen atom on the aromatic ring, and includes a nitro group, an amino group, a carboxyl group, and a halogen atom.
- An alkoxy group having 1 to 10 carbon atoms, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an aryl group having 6 to 40 carbon atoms, an organic group including an ether bond, and an organic group including a ketone bond Represents an organic group containing an ester bond, or a combination thereof, m1 is an integer from 0 to (2 + 2n), m2 and m3 are each an integer from 1 to (3 + 2n), and (m1 + m2 + m3) is from 2 to represents an integer of (4 + 2n).
- n represents the number of condensed benzene rings in the number or an aromatic hydrocarbon ring of the benzene ring, is 1 to 6 integer .
- X + is H 4 +, primary ammonium ion, a secondary ammonium ion, a tertiary ammonium ion, a quaternary ammonium ion, aryl sulfonate compound having a hydroxyl group represented by the sulfonium ion, or an iodonium cation.
- a resist underlayer film-forming composition comprising As a second aspect, the resist underlayer film forming composition according to the first aspect, wherein Ar is a benzene ring, As a third aspect, the resist underlayer film forming composition according to the first aspect, in which X + is an ammonium ion, As a fourth aspect, the resist underlayer film forming composition according to any one of the first to third aspects, in which R 1 represents a methyl group or a carb
- a step of forming a resist underlayer film on the semiconductor substrate with the resist underlayer film forming composition according to any one of the first to sixth aspects, a step of forming a resist film thereon, light Or a step of forming a resist pattern by electron beam irradiation and development, a step of etching the resist underlayer film with the formed resist pattern, and a step of processing a semiconductor substrate with the patterned resist underlayer film.
- a step of forming a resist underlayer film on the semiconductor substrate with the resist underlayer film forming composition according to any one of the first to sixth aspects, a step of forming a hard mask thereon, and further A step of forming a resist film thereon, a step of forming a resist pattern by light and electron beam irradiation and development, a step of etching a hard mask with the formed resist pattern, and forming the resist underlayer film with a patterned hard mask
- the crosslinking catalyst for resist underlayer film forming composition of the present invention is characterized in that a part of the hydrogen atoms of the aromatic ring of the aryl sulfonate is substituted with a hydroxyl group, and a resist underlayer film forming composition containing the same
- the product contains such a crosslinking catalyst, a polymer resin and a solvent, and may further contain a crosslinking agent.
- the crosslinking catalyst of the present invention has a hydroxyl group, thereby increasing the acidity of the generated aryl sulfonic acid and not only promoting the crosslinking reaction in the firing step, but also the hydroxyl group acts as a crosslinking site.
- Sublimates derived from low-molecular components in the resist underlayer film can be effectively suppressed.
- the resist underlayer film forming composition can be applied to the substrate to be processed, and the sublimate generated when the resist underlayer film is formed by baking can be suppressed, and further, the sublimate is reattached to the formed resist underlayer film. It is possible to reduce the occurrence of defects and the like caused by doing so.
- the crosslinking catalyst for resist underlayer film forming composition of the present invention is a thermal acid generator that forms ammonium, sulfonium, or iodonium salt and generates sulfonic acid by thermal decomposition only in the firing step, It exhibits neutrality or weak acidity in the resist underlayer film forming composition, hardly interacts with the polymer resin and the crosslinking agent, and can suppress deterioration of quality due to aging.
- the present invention is a resist underlayer film forming composition
- a resist underlayer film forming composition comprising an aryl sulfonate compound having a hydroxyl group represented by formula (1).
- the aryl sulfonate compound having a hydroxyl group represented by the formula (1) can be used as a crosslinking catalyst.
- the resist underlayer film forming composition contains a polymer, an aryl sulfonate compound having a hydroxyl group represented by the above formula (1), and a solvent.
- a crosslinking agent can be included and additives, such as an acid generator and surfactant, can be included as needed.
- the solid content of the composition is 0.1 to 70% by mass, or 0.1 to 60% by mass.
- the solid content is the content ratio of all components excluding the solvent from the resist underlayer film forming composition.
- the polymer can be contained in the solid content in a proportion of 1 to 99.9% by mass, or 50 to 99.9% by mass, or 50 to 95% by mass, or 50 to 90% by mass.
- the polymer used in the present invention has a weight average molecular weight of 600 to 1000000 or 600 to 200000.
- Ar represents a benzene ring or an aromatic hydrocarbon ring condensed with a benzene ring
- R 1 represents a hydrogen atom substituent on the aromatic ring.
- n represents the number of benzene rings or the number of benzene rings condensed in an aromatic hydrocarbon ring, and is an integer of 1 to 6.
- X + represents NH 4 + , a primary ammonium ion, a secondary ammonium ion, a tertiary ammonium ion, a quaternary ammonium ion, a sulfonium ion, or an iodonium cation.
- alkoxy group having 1 to 10 carbon atoms examples include methoxy group, ethoxy group, n-propoxy group, i-propoxy group, n-butoxy group, i-butoxy group, s-butoxy group, t-butoxy group, and n-pentyl group.
- alkyl group having 1 to 10 carbon atoms examples include methyl, ethyl, n-propyl, i-propyl, cyclopropyl, n-butyl, i-butyl, s-butyl, t- Butyl, cyclobutyl, 1-methyl-cyclopropyl, 2-methyl-cyclopropyl, n-pentyl, 1-methyl-n-butyl, 2-methyl-n-butyl, 3-methyl-n -Butyl group, 1,1-dimethyl-n-propyl group, 1,2-dimethyl-n-propyl group, 2,2-dimethyl-n-propyl group, 1-ethyl-n-propyl group, cyclopentyl group, 1 -Methyl-cyclobutyl group, 2-methyl-cyclobutyl group, 3-methyl-cyclobutyl group, 1,2-dimethyl-cyclopropyl group, 2,3-dimethyl-cyclopropy
- alkenyl group having 2 to 10 carbon atoms examples include ethenyl group, 1-propenyl group, 2-propenyl group, 1-methyl-1-ethenyl group, 1-butenyl group, 2-butenyl group, 3-butenyl group, 2- Methyl-1-propenyl group, 2-methyl-2-propenyl group, 1-ethylethenyl group, 1-methyl-1-propenyl group, 1-methyl-2-propenyl group, 1-pentenyl group, 2-pentenyl group, 3 -Pentenyl group, 4-pentenyl group, 1-n-propylethenyl group, 1-methyl-1-butenyl group, 1-methyl-2-butenyl group, 1-methyl-3-butenyl group, 2-ethyl-2 -Propenyl group, 2-methyl-1-butenyl group, 2-methyl-2-butenyl group, 2-methyl-3-butenyl group, 3-methyl-1-butenyl group, 3-methyl-2-buten
- aryl group having 6 to 40 carbon atoms examples include phenyl group, o-methylphenyl group, m-methylphenyl group, p-methylphenyl group, o-chlorophenyl group, m-chlorophenyl group, p-chlorophenyl group, o -Fluorophenyl group, p-fluorophenyl group, o-methoxyphenyl group, p-methoxyphenyl group, p-nitrophenyl group, p-cyanophenyl group, ⁇ -naphthyl group, ⁇ -naphthyl group, o-biphenylyl group, m-biphenylyl group, p-biphenylyl group, 1-anthryl group, 2-anthryl group, 9-anthryl group, 1-phenanthryl group, 2-phenanthryl group, 3-phenanthryl group, 4-phenanthryl group and 9-pheny
- the organic group containing an ether bond is R 11 —O—R 11 (R 11 is each independently an alkyl group having 1 to 6 carbon atoms such as a methyl group or an ethyl group, an alkylene group, a phenyl group, or a phenylene group.)
- R 11 is each independently an alkyl group having 1 to 6 carbon atoms such as a methyl group or an ethyl group, an alkylene group, a phenyl group, or a phenylene group.
- an organic group including an ether bond including a methoxy group, an ethoxy group, and a phenoxy group can be given.
- the organic group containing a ketone bond is R 21 —C ( ⁇ O) —R 21 (R 21 is independently an alkyl group having 1 to 6 carbon atoms such as a methyl group or an ethyl group, an alkylene group, a phenyl group, or a phenylene group. And an organic group containing a ketone bond containing an acetoxy group or a benzoyl group.
- the organic group containing an ester bond is R 31 —C ( ⁇ O) O—R 31 (wherein R 31 is each independently an alkyl group having 1 to 6 carbon atoms such as a methyl group or an ethyl group, an alkylene group, a phenyl group, a phenylene group). And an organic group containing an ester bond such as methyl ester, ethyl ester, and phenyl ester.
- halogen atom examples include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
- Examples of the sulfonic acid compound serving as the anion site of the crosslinking catalyst represented by the formula (1) include p-phenolsulfonic acid, o-cresol-4-sulfonic acid, p-cresol-2-sulfonic acid, and 2-chloro-p.
- the cationic site X + of the crosslinking catalyst represented by the formula (1) is NH 4 + , primary ammonium ion, secondary ammonium ion, tertiary ammonium ion, quaternary ammonium ion, sulfonium ion, or iodonium. It is a cation. Primary ammonium ions, secondary ammonium ions, tertiary ammonium ions, and quaternary ammonium ions are preferable, and secondary ammonium ions and tertiary ammonium ions are particularly preferable.
- primary ammonium ions examples include primary ammonium ions derived from methylamine, ethylamine, n-propylamine, n-butylamine, aniline, dimethylaniline and the like.
- Secondary ammonium ions include dimethylamine, diethylamine, n-dipropylamine, diisopropylamine, n-dibutylamine, pyrrolidine, piperidine, morpholine, 3,5-dimethylmorpholine, 2,6-dimethylpiperidine, methylaminoethanol And secondary ammonium ions derived from the above.
- the tertiary ammonium ions include trimethylamine, triethylamine, n-tripropylamine, diisopropylethylamine, n-tributylamine, 1-methylpyrrolidine, 1-methylpiperidine, 1-ethylpiperidine, 4-methylmorpholine, 4-ethylmorpholine.
- quaternary ammonium ion examples include quaternary ammonium ions such as tetramethylammonium, tetraethylammonium, tetra-n-propylammonium, tetra-n-butylammonium, benzyltetramethylammonium, and benzyltetraethylammonium.
- sulfonium ion examples include sulfonium ions such as trimethylsulfonium, triethylsulfonium, phenyldimethylsulfonium, diphenylmethylsulfonium, and triphenylsulfonium.
- iodonium cation examples include iodonium cations such as diphenyliodonium and bis (4-tert-butylphenyl) iodonium.
- cation derived from pyridine, 4-methylpyridine, n-tripropylamine, morpholine, 4-methylmorpholine is used.
- Examples of the crosslinking catalyst represented by the formula (1) include the following formulas (2-1) to (2-27).
- p-toluenesulfonic acid in addition to the crosslinking catalyst of the formula (1), p-toluenesulfonic acid, trifluoromethanesulfonic acid, pyridinium p-toluenesulfonic acid, salicylic acid, 5-sulfosalicylic acid, 4 -Acidic compounds such as phenolsulfonic acid, camphorsulfonic acid, 4-chlorobenzenesulfonic acid, benzenedisulfonic acid, 1-naphthalenesulfonic acid, citric acid, benzoic acid, hydroxybenzoic acid, naphthalenecarboxylic acid and / or 2,4,4 , 6-tetrabromocyclohexadienone, benzoin tosylate, 2-nitrobenzyl tosylate, other thermal acid generators such as organic sulfonic acid alkyl esters, or bis (4-t-butylphenyl)
- the amount of the crosslinking catalyst is 0.0001 to 20% by mass, preferably 0.0005 to 10% by mass, and more preferably 0.01 to 3% by mass with respect to the total solid content.
- Examples of the polymer resin contained in the resist underlayer film forming composition of the present invention include a novolak resin, a polyester resin, a polyimide resin, an acrylic resin, and the like, or a polymer resin made of a combination thereof.
- the resist underlayer film forming composition of the present invention can contain a crosslinking agent component.
- the cross-linking agent include melamine type, substituted urea type, or polymer type thereof.
- a cross-linking agent having at least two cross-linking substituents methoxymethylated glycoluril, butoxymethylated glycoluril, methoxymethylated melamine, butoxymethylated melamine, methoxymethylated benzogwanamine, butoxymethylated benzogwanamine, Compounds such as methoxymethylated urea, butoxymethylated urea, methoxymethylated thiourea, or methoxymethylated thiourea.
- the condensate of these compounds can also be used.
- a crosslinking agent having high heat resistance can be used as the crosslinking agent.
- a compound containing a crosslinking-forming substituent having an aromatic ring for example, a benzene ring or a naphthalene ring
- this compound include a compound having a partial structure of the following formula (3) and a polymer or oligomer having a repeating unit of the following formula (4).
- R 2 , R 3 , R 4 , and R 5 are a hydrogen atom or an alkyl group having 1 to 10 carbon atoms, and the above examples are used for these alkyl groups. Can do.
- n1 is an integer of 1 to 5
- n2 is an integer of 1 to 5
- (n1 + n2) is an integer of 2 to 6
- n3 is an integer of 1 to 3
- n4 represents an integer of 1 to 3
- (n3 + n4) represents an integer of 2 to 4.
- the above compounds can be obtained as products of Asahi Organic Materials Co., Ltd. and Honshu Chemical Industry Co., Ltd.
- the compound of the formula (5-24) can be obtained as Asahi Organic Materials Co., Ltd., trade name TM-BIP-A.
- the amount of the crosslinking agent to be added varies depending on the coating solvent used, the base substrate used, the required solution viscosity, the required film shape, etc., but is 0.001 to 80% by mass with respect to the total solid content, preferably The amount is 0.01 to 50% by mass, more preferably 0.05 to 40% by mass.
- These cross-linking agents may cause a cross-linking reaction by self-condensation, but when a cross-linkable substituent is present in the above-mentioned polymer of the present invention, it can cause a cross-linking reaction with those cross-linkable substituents.
- Examples of further light absorbers include commercially available light absorbers described in “Technical dye technology and market” (published by CMC) and “Dye Handbook” (edited by the Society of Synthetic Organic Chemistry), such as C.I. I. Disperse Yellow 1, 3, 4, 5, 7, 8, 13, 23, 31, 49, 50, 51, 54, 60, 64, 66, 68, 79, 82, 88, 90, 93, 102, 114 and 124; C. I. D isprange Orange 1, 5, 13, 25, 29, 30, 31, 44, 57, 72 and 73; I. Disperse Red 1, 5, 7, 13, 17, 19, 43, 50, 54, 58, 65, 72, 73, 88, 117, 137, 143, 199 and 210; I.
- DisperseViolet 43; C.I. I. DisperseBlue 96; C.I. I. FluorescentesBrightening Agent 112, 135 and 163; I. Solvent Orange 2 and 45; C.I. I. Solvent Red 1, 3, 8, 23, 24, 25, 27 and 49; I. PigmentGreen 10; C.I. I. Pigment Brown 2 etc. can be used suitably.
- the above light-absorbing agent is usually blended at a ratio of 10% by mass or less, preferably 5% by mass or less, based on the total solid content of the resist underlayer film material for lithography.
- the rheology modifier mainly improves the fluidity of the resist underlayer film forming composition, and improves the film thickness uniformity of the resist underlayer film and the fillability of the resist underlayer film forming composition inside the hole, particularly in the baking process. It is added for the purpose of enhancing.
- phthalic acid derivatives such as dimethyl phthalate, diethyl phthalate, diisobutyl phthalate, dihexyl phthalate, butyl isodecyl phthalate, adipic acid derivatives such as dinormal butyl adipate, diisobutyl adipate, diisooctyl adipate, octyl decyl adipate
- maleic acid derivatives such as normal butyl maleate, diethyl maleate and dinonyl maleate
- oleic acid derivatives such as methyl oleate, butyl oleate and tetrahydrofurfuryl oleate
- stearic acid derivatives such as normal butyl stearate and glyceryl stearate. it can.
- These rheology modifiers are usually blended at a ratio of less than 30% by mass with respect to the total solid content of the resist underlayer film material for
- the adhesion assistant is added mainly for the purpose of improving the adhesion between the substrate or the resist and the resist underlayer film forming composition, and preventing the resist from peeling particularly during development.
- Specific examples include chlorosilanes such as trimethylchlorosilane, dimethylvinylchlorosilane, methyldiphenylchlorosilane, chloromethyldimethylchlorosilane, trimethylmethoxysilane, dimethyldiethoxysilane, methyldimethoxysilane, dimethylvinylethoxysilane, diphenyldimethoxysilane, Alkoxysilanes such as enyltriethoxysilane, hexamethyldisilazane, N, N'-bis (trimethylsilyl) urea, silazanes such as dimethyltrimethylsilylamine, trimethylsilylimidazole, vinyltrichlorosilane, ⁇ -chloropropyltrimethoxy
- a surfactant can be blended in order to further improve the applicability to surface unevenness without generating pinholes or installations.
- the surfactant include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, polyoxyethylene alkyl ethers such as polyoxyethylene oleyl ether, polyoxyethylene octylphenol ether, polyoxyethylene nonyl Polyoxyethylene alkyl allyl ethers such as phenol ether, polyoxyethylene / polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, sorbitan tristearate Sorbitan fatty acid esters such as rate, polyoxyethylene sorbitan monolaurate, polyoxyethylene sol
- Nonionic surfactants such as polyoxyethylene sorbitan fatty acid esters such as rate, polyoxyethylene sorbitan mono
- the blending amount of these surfactants is usually 2.0% by mass or less, preferably 1.0% by mass or less, based on the total solid content of the resist underlayer film material for lithography of the present invention.
- These surfactants may be added alone or in combination of two or more.
- the solvent for dissolving the polymer and the crosslinking agent component, the crosslinking catalyst and the like include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, Propylene glycol, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether, propylene glycol monoethyl ether acetate, propylene glycol propyl ether acetate, toluene, xylene, methyl ethyl ketone, cyclopentanone, cyclohexanone, 2-hydroxypropionic acid Ethyl, 2-hydroxy-2 Ethyl methyl propionate, ethyl ethoxyacetate, ethyl hydroxyacetate, methyl 2-hydroxypropionic acid
- high boiling point solvents such as propylene glycol monobutyl ether and propylene glycol monobutyl ether acetate can be mixed and used.
- solvents propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, ethyl lactate, butyl lactate, cyclohexanone and the like are preferable for improving the leveling property.
- the resist used in the present invention is a photoresist or an electron beam resist.
- the photoresist applied on the upper part of the resist underlayer film for lithography in the present invention either negative type or positive type can be used, and a positive type photoresist composed of a novolak resin and 1,2-naphthoquinonediazide sulfonic acid ester, depending on the acid.
- Chemically amplified photoresist comprising a binder having a group that decomposes to increase the alkali dissolution rate and a photoacid generator, a low molecular weight compound and photoacid that increases the alkali dissolution rate of the photoresist by decomposition with an alkali-soluble binder and acid
- Chemically amplified photoresist comprising a generator, comprising a binder having a group that decomposes with acid to increase the alkali dissolution rate, a low-molecular compound that decomposes with acid to increase the alkali dissolution rate of the photoresist, and a photoacid generator Chemically amplified photoresist with Si atoms in the skeleton That there is a photoresist or the like, for example, Rohm & Haas Co., and a trade name APEX-E.
- an acid is generated by irradiation of a resin containing an Si-Si bond in the main chain and an aromatic ring at the terminal and an electron beam.
- examples include a composition comprising an acid generator, or a composition comprising a poly (p-hydroxystyrene) having a hydroxyl group substituted with an organic group containing N-carboxyamine and an acid generator that generates an acid upon irradiation with an electron beam. It is done.
- the acid generated from the acid generator by electron beam irradiation reacts with the N-carboxyaminoxy group of the polymer side chain, and the polymer side chain decomposes into a hydroxyl group and exhibits alkali solubility, thereby exhibiting alkali solubility.
- the acid generated from the acid generator by electron beam irradiation reacts with the N-carboxyaminoxy group of the polymer side chain, and the polymer side chain decomposes into a hydroxyl group and exhibits alkali solubility, thereby exhibiting alkali solubility.
- Acid generators that generate an acid upon irradiation with this electron beam are 1,1-bis [p-chlorophenyl] -2,2,2-trichloroethane, 1,1-bis [p-methoxyphenyl] -2,2,2 -Halogenated organic compounds such as trichloroethane, 1,1-bis [p-chlorophenyl] -2,2-dichloroethane, 2-chloro-6- (trichloromethyl) pyridine, and onium salts such as triphenylsulfonium salt and diphenyliodonium salt Sulfonic acid esters such as nitrobenzyl tosylate and dinitrobenzyl tosylate.
- Alcohol aqueous solutions such as alcohol amines, quaternary ammonium salts such as tetramethylammonium hydroxide, tetraethylammonium hydroxide and choline, and cyclic amines such as pyrrole and piperidine can be used.
- an appropriate amount of an alcohol such as isopropyl alcohol or a nonionic surfactant may be added to the alkaline aqueous solution.
- preferred developers are quaternary ammonium salts, more preferably tetramethylammonium hydroxide and choline.
- an organic solvent can be used as a developer. After the exposure, development is performed with a developer (solvent). As a result, for example, when a positive photoresist is used, the unexposed portion of the photoresist is removed, and a photoresist pattern is formed.
- Developers include, for example, methyl acetate, butyl acetate, ethyl acetate, isopropyl acetate, amyl acetate, isoamyl acetate, ethyl methoxyacetate, ethyl ethoxy acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monopropyl Ether acetate, ethylene glycol monobutyl ether acetate, ethylene glycol monophenyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monopropyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monophenyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol No ethyl ether acetate, 2-methoxybutyl acetate, 3-methoxybutyl acetate
- a spinner, a coater, etc. are suitably used on a substrate (for example, a transparent substrate such as a silicon / silicon dioxide coating, a glass substrate, an ITO substrate) used for manufacturing a precision integrated circuit device.
- a substrate for example, a transparent substrate such as a silicon / silicon dioxide coating, a glass substrate, an ITO substrate
- the resist underlayer film forming composition After applying the resist underlayer film forming composition by a simple coating method, it is baked and cured to form a coating type underlayer film.
- the thickness of the resist underlayer film is preferably 0.01 to 3.0 ⁇ m.
- the conditions for baking after coating are 80 to 350 ° C. and 0.5 to 120 minutes.
- a resist is applied and irradiated with light or an electron beam through a predetermined mask.
- a good resist pattern can be obtained by performing, developing, rinsing and drying. If necessary, post-irradiation heating (PEB: Post Exposure Bake) can be performed. Then, the resist underlayer film where the resist has been developed and removed by the above process is removed by dry etching, and a desired pattern can be formed on the substrate.
- PEB Post Exposure Bake
- the exposure light in the photoresist is actinic radiation such as near ultraviolet, far ultraviolet, or extreme ultraviolet (for example, EUV, wavelength 13.5 nm), for example, 248 nm (KrF laser light), 193 nm (ArF laser light), Light having a wavelength such as 157 nm (F 2 laser light) is used.
- the light irradiation can be used without particular limitation as long as it can generate an acid from a photoacid generator, and the exposure dose is 1 to 2000 mJ / cm 2 , or 10 to 1500 mJ / cm 2 , or 50. To 1000 mJ / cm 2 .
- the electron beam irradiation of an electron beam resist can be performed using an electron beam irradiation apparatus, for example.
- a step of forming the resist underlayer film on the semiconductor substrate with the resist underlayer film forming composition a step of forming a resist film thereon, a step of forming a resist pattern by light or electron beam irradiation and development, a resist pattern
- a semiconductor device can be manufactured through a step of etching the resist underlayer film and a step of processing the semiconductor substrate with the patterned resist underlayer film.
- Example 1 1.02 g of novolak resin for resist underlayer film forming composition represented by the following formula (6-1), 3,3 ′, 5,5′-tetramethoxymethyl-4,4′-bisphenol (trade name) as a crosslinking agent : TMOM-BP, manufactured by Honshu Chemical Industry Co., Ltd.) 0.20 g, 0.03 g of the crosslinking catalyst obtained in Synthesis Example 1 was 4.75 g of propylene glycol monomethyl ether, 14.25 g of propylene glycol monomethyl ether acetate, 4.75 g of cyclohexanone. And a solution of a resist underlayer film forming composition for lithography was prepared.
- Example 2 1.02 g of novolak resin for resist underlayer film forming composition represented by the above formula (6-1), 3,3 ′, 5,5′-tetramethoxymethyl-4,4′-bisphenol (trade name) as a crosslinking agent : TMOM-BP, manufactured by Honshu Chemical Industry Co., Ltd. And a solution of a resist underlayer film forming composition for lithography was prepared.
- Example 3 1.02 g of novolak resin for resist underlayer film forming composition represented by the above formula (6-1), 3,3 ′, 5,5′-tetramethoxymethyl-4,4′-bisphenol (trade name) as a crosslinking agent : TMOM-BP, manufactured by Honshu Chemical Industry Co., Ltd.) 0.20 g, 0.03 g of the crosslinking catalyst obtained in Synthesis Example 3 was 4.75 g of propylene glycol monomethyl ether, 14.25 g of propylene glycol monomethyl ether acetate, 4.75 g of cyclohexanone. And a solution of a resist underlayer film forming composition for lithography was prepared.
- Example 4 1.02 g of novolak resin for resist underlayer film forming composition represented by the above formula (6-1), 3,3 ′, 5,5′-tetramethoxymethyl-4,4′-bisphenol (trade name) as a crosslinking agent : TMOM-BP, manufactured by Honshu Chemical Industries, Ltd. And a solution of a resist underlayer film forming composition for lithography was prepared.
- Example 5 1.02 g of novolak resin for resist underlayer film forming composition represented by the above formula (6-1), 3,3 ′, 5,5′-tetramethoxymethyl-4,4′-bisphenol (trade name) as a crosslinking agent : TMOM-BP, manufactured by Honshu Chemical Industry Co., Ltd.) 0.20 g, 0.03 g of the crosslinking catalyst obtained in Synthesis Example 5 was 4.75 g of propylene glycol monomethyl ether, 14.25 g of propylene glycol monomethyl ether acetate, 4.75 g of cyclohexanone. And a solution of a resist underlayer film forming composition for lithography was prepared.
- Example 6 1.02 g of novolak resin for resist underlayer film forming composition represented by the above formula (6-1), 3,3 ′, 5,5′-tetramethoxymethyl-4,4′-bisphenol (trade name) as a crosslinking agent : TMOM-BP, manufactured by Honshu Chemical Industry Co., Ltd.) 0.20 g, 0.03 g of the crosslinking catalyst obtained in Synthesis Example 6 was 4.75 g of propylene glycol monomethyl ether, 14.25 g of propylene glycol monomethyl ether acetate, 4.75 g of cyclohexanone. And a solution of a resist underlayer film forming composition for lithography was prepared.
- Example 7 1.02 g of novolak resin for resist underlayer film forming composition represented by the above formula (6-1), 3,3 ′, 5,5′-tetramethoxymethyl-4,4′-bisphenol (trade name) as a crosslinking agent : TMOM-BP, manufactured by Honshu Chemical Industry Co., Ltd.) 0.20 g, 0.03 g of the crosslinking catalyst obtained in Synthesis Example 7 was 4.75 g of propylene glycol monomethyl ether, 14.25 g of propylene glycol monomethyl ether acetate, 4.75 g of cyclohexanone. And a solution of a resist underlayer film forming composition for lithography was prepared.
- Example 8 1.02 g of novolak resin for resist underlayer film forming composition represented by the above formula (6-1), 3,3 ′, 5,5′-tetramethoxymethyl-4,4′-bisphenol (trade name) as a crosslinking agent : TMOM-BP, manufactured by Honshu Chemical Industry Co., Ltd.) 0.20 g, 0.03 g of the crosslinking catalyst obtained in Synthesis Example 8 was 4.75 g of propylene glycol monomethyl ether, 14.25 g of propylene glycol monomethyl ether acetate, 4.75 g of cyclohexanone. And a solution of a resist underlayer film forming composition for lithography was prepared.
- Example 9 1.25 g of the novolak resin for the resist underlayer film forming composition represented by the formula (6-1), 0.04 g of the crosslinking catalyst obtained in Synthesis Example 1, 4.75 g of propylene glycol monomethyl ether, and propylene glycol monomethyl ether acetate 14 0.25 g and 4.75 g of cyclohexanone were dissolved to prepare a resist underlayer film forming composition solution for lithography.
- the resist underlayer film forming composition of this example does not contain a crosslinking agent.
- Example 10 1.02 g of novolak resin for resist underlayer film forming composition represented by the following formula (6-2), 3,3 ′, 5,5′-tetramethoxymethyl-4,4′-bisphenol (trade name) as a crosslinking agent : TMOM-BP, manufactured by Honshu Chemical Industry Co., Ltd.) 0.20 g, 0.03 g of the crosslinking catalyst obtained in Synthesis Example 1, 2.38 g of propylene glycol monomethyl ether, 7.13 g of propylene glycol monomethyl ether acetate, 14.25 g of cyclohexanone And a solution of a resist underlayer film forming composition for lithography was prepared.
- TMOM-BP 5,5′-tetramethoxymethyl-4,4′-bisphenol
- Example 11 0.98 g of polyimide resin for resist underlayer film forming composition represented by the following formula (6-3), tetramethoxymethylglycoluril (trade name: POWDERLINK [registered trademark] 1174, manufactured by Nippon Cytec Industries Co., Ltd.) ) 0.25 g, 0.02 g of the crosslinking catalyst obtained in Synthesis Example 1 was dissolved in 16.63 g of propylene glycol monomethyl ether and 7.13 g of propylene glycol monomethyl ether acetate to prepare a solution of a resist underlayer film forming composition for lithography. .
- Example 12 0.98 g of polyester resin for resist underlayer film forming composition represented by the following formula (6-4), tetramethoxymethylglycoluril (trade name: POWDERLINK [registered trademark] 1174, manufactured by Nippon Cytec Industries, Ltd.) ) 0.25 g, 0.02 g of the crosslinking catalyst obtained in Synthesis Example 1 was dissolved in 16.63 g of propylene glycol monomethyl ether and 7.13 g of propylene glycol monoethyl ether to prepare a solution of a resist underlayer film forming composition for lithography. .
- 6-4 tetramethoxymethylglycoluril
- Example 13 0.98 g of acrylic resin for resist underlayer film forming composition represented by the following formula (6-5), tetramethoxymethylglycoluril (trade name: POWDERLINK [registered trademark] 1174, manufactured by Nippon Cytec Industries Co., Ltd.) ) 0.25 g, 0.02 g of the crosslinking catalyst obtained in Synthesis Example 1 was dissolved in 21.38 g of propylene glycol monomethyl ether and 2.38 g of propylene glycol monomethyl ether acetate to prepare a resist underlayer film forming composition solution for lithography. .
- ⁇ Comparative Example 1> 1.02 g of novolak resin for resist underlayer film forming composition represented by the formula (6-1), 3,3 ′, 5,5′-tetramethoxymethyl-4,4′-bisphenol (trade name: TMOM-BP (produced by Honshu Chemical Industry Co., Ltd.) (0.20 g) and pyridinium-p-toluenesulfonate (produced by Tokyo Chemical Industry Co., Ltd.) represented by the formula (7-1) as a crosslinking catalyst (0.03 g) were mixed with propylene glycol monomethyl.
- TMOM-BP produced by Honshu Chemical Industry Co., Ltd.
- pyridinium-p-toluenesulfonate produced by Tokyo Chemical Industry Co., Ltd.
- ⁇ Comparative example 2> 1.25 g of novolak resin for resist underlayer film forming composition represented by formula (6-1), pyridinium-p-toluenesulfonate represented by formula (7-1) as a crosslinking catalyst (Tokyo Chemical Industry Co., Ltd.) (0.04 g) was dissolved in 4.75 g of propylene glycol monomethyl ether, 14.25 g of propylene glycol monomethyl ether acetate, and 4.75 g of cyclohexanone to prepare a resist underlayer film forming composition solution for lithography.
- the resist underlayer film forming composition of this example does not contain a crosslinking agent.
- ⁇ Comparative Example 3> 1.02 g of novolak resin for the resist underlayer film forming composition represented by the formula (6-2), 3,3 ′, 5,5′-tetramethoxymethyl-4,4′-bisphenol (trade name) as a crosslinking agent : TMOM-BP (produced by Honshu Chemical Industry Co., Ltd.) 0.20 g, and 0.03 g of pyridinium-p-toluenesulfonate (produced by Tokyo Chemical Industry Co., Ltd.) represented by the formula (7-1) as a crosslinking catalyst It was dissolved in 2.38 g of glycol monomethyl ether, 7.13 g of propylene glycol monomethyl ether acetate, and 14.25 g of cyclohexanone to prepare a resist underlayer film forming composition solution for lithography.
- TMOM-BP produced by Honshu Chemical Industry Co., Ltd.
- pyridinium-p-toluenesulfonate produced by Tokyo Chemical Industry Co., Ltd
- ⁇ Comparative Example 7> 1.02 g of novolak resin for resist underlayer film forming composition represented by the above formula (6-1), 3,3 ′, 5,5′-tetramethoxymethyl-4,4′-bisphenol (trade name) as a crosslinking agent : TMOM-BP (produced by Honshu Chemical Industry Co., Ltd.) 0.20 g, p-phenolsulfonic acid hydrate (manufactured by Tokyo Chemical Industry Co., Ltd.) 0.03 g represented by the formula (7-2) as a crosslinking catalyst
- a solution of a resist underlayer film forming composition for lithography was prepared by dissolving in 4.75 g of glycol monomethyl ether, 14.25 g of propylene glycol monomethyl ether acetate, and 4.75 g of cyclohexanone.
- the amount of sublimation was measured using a sublimation amount measuring device described in International Publication No. 2007/111147 pamphlet.
- the resist underlayer film forming compositions prepared in Examples 1 to 13 and Comparative Examples 1 to 6 were applied to a silicon wafer substrate having a diameter of 4 inches with a spin coater so as to have a film thickness of 100 nm. .
- the wafer coated with the resist underlayer film is set in the sublimation amount measuring apparatus in which the hot plate is integrated, baked for 120 seconds, and the sublimation is placed on a QCM (Quartz Crystal Microbalance) sensor, that is, a crystal resonator on which an electrode is formed. I collected it.
- the QCM sensor can measure a small amount of mass change by utilizing the property that when a sublimate adheres to the surface (electrode) of the crystal unit, the frequency of the crystal unit changes (decreases) according to the mass. .
- the detailed measurement procedure is as follows.
- the hot plate of the sublimation amount measuring device was heated to the measurement temperatures shown in Tables 1 to 6, the pump flow rate was set to 1 m 3 / s, and the first 60 seconds was left for device stabilization.
- the wafer coated with the resist underlayer film was quickly placed on the hot plate from the slide opening, and the sublimates were collected from 60 seconds to 180 seconds (120 seconds).
- the flow attachment (detection part) that connects the QCM sensor and the collection funnel part of the sublimation quantity measuring device is used without a nozzle, so that the chamber with a distance of 30 mm from the sensor (quartz crystal unit) is used.
- the airflow flows from the unit flow path (caliber: 32 mm) without being restricted.
- the QCM sensor uses a material mainly composed of silicon and aluminum (AlSi) as an electrode, the diameter of the crystal unit (sensor diameter) is 14 mm, the electrode diameter on the surface of the crystal unit is 5 mm, and the resonance frequency is 9 MHz.
- the thing of was used.
- the obtained frequency change was converted into grams from the eigenvalue of the quartz crystal used for the measurement, and the relationship between the amount of sublimation of one wafer coated with the resist underlayer film and the passage of time was clarified.
- the first 60 seconds is a time zone in which the wafer is left to stabilize the apparatus (no wafer is set), and the measured values from the time of 60 seconds to 180 seconds when the wafer is placed on the hot plate are the wafers.
- Tables 1 to 6 show the amount of sublimation of the resist underlayer film determined from the apparatus as the sublimation amount ratio.
- the sublimation amount ratio is represented by a value normalized with the amount of sublimation generated from the resist underlayer film of Comparative Examples 1 to 6 as 1.
- the sublimate amount ratio generated from the resist underlayer film forming compositions of Examples 1 to 8 is smaller than the sublimate amount ratio generated from the resist underlayer film forming composition of Comparative Example 1. That is, the crosslinking catalyst applied in Examples 1 to 8 can effectively suppress the generation amount of the sublimate.
- Example 9 has a sublimation amount ratio smaller than that of the resist underlayer film forming composition of Comparative Example 2. That is, even when the crosslinking agent is not included, the crosslinking catalyst applied in Example 9 can be effective in reducing the amount of sublimation.
- Examples 10 to 13 are less than the ratio of the amount of sublimates generated from the resist underlayer film forming compositions of Comparative Examples 3 to 6, respectively.
- the crosslinking catalyst applied in Examples 10 to 13 can exhibit an effective sublimation reduction effect regardless of the type of polymer resin of the resist underlayer film forming composition. Therefore, the aryl sulfonate having a hydroxyl group according to the present invention can more effectively suppress the amount of sublimate generated from the resist underlayer film than the aryl sulfonate having no hydroxyl group.
- the resist underlayer film forming composition of Example 1 and Comparative Example 7 was applied to a silicon wafer so as to have a film thickness of 100 nm, and the resist underlayer film was baked at 240 ° C. for 60 seconds using the sublimation amount measuring device. The amount of sublimation generated from the was measured. The amount of sublimation generated at this time is represented by a value normalized with the amount of sublimation generated from the resist underlayer film of Comparative Example 1 as 1 (S A ). Next, this resist underlayer film forming composition was subjected to a storage test at 35 ° C. for 2 weeks, and the amount of sublimation was measured again using the apparatus.
- Sublimation amount generated at this time is represented by the normalized value of the amount of sublimation product generated from the resist underlayer film of Comparative Example 1 of the measured before the storage test as 1 (S B).
- the degree of aging (deterioration) of the resist underlayer film was evaluated from the sublimation amount measurement by calculating the increase / decrease rate (S B / S A ) of the sublimation amount ratio before and after the storage test. That is, as the increase / decrease rate (S B / S A ) of the sublimate amount ratio before and after the storage test increases, the amount of sublimate from the resist underlayer film increases and aging is likely to occur in the storage test.
- Table 7 shows the amount of sublimation before the storage test (S A ), the amount of sublimation after the storage test (S B ), and the increase / decrease rate of the amount of sublimation (S B / S A ).
- the aryl sulfonate having a hydroxyl group according to the present invention can suppress deterioration in quality due to aging, compared to an aryl sulfonic acid having a hydroxyl group that does not form a salt.
- the resist underlayer film forming composition of the present invention reduces the amount of sublimation components (sublimation products) generated from the resist underlayer film forming composition that is generated when the underlayer film is formed by baking the resist underlayer film forming composition. Further, the aging (deterioration) of the resist underlayer film forming composition can be suppressed, and the storage stability of quality can be improved.
Abstract
Description
(式中、Arはベンゼン環又はベンゼン環が縮合した芳香族炭化水素環を示し、R1はそれぞれ芳香環上の水素原子の置換基であって、ニトロ基、アミノ基、カルボキシル基、ハロゲン原子、炭素数1乃至10のアルコキシ基、炭素数1乃至10のアルキル基、炭素数2乃至10のアルケニル基、炭素数6乃至40のアリール基、エーテル結合を含む有機基、ケトン結合を含む有機基、エステル結合を含む有機基、又はそれらを組み合わせた基を表す。m1は0乃至(2+2n)の整数であり、m2及びm3はそれぞれ1乃至(3+2n)の整数であり、(m1+m2+m3)は2乃至(4+2n)の整数を示す。ただし、nはベンゼン環の数又は芳香族炭化水素環において縮合したベンゼン環の数を表し、1乃至6の整数である。X+はNH4 +、第1級アンモニウムイオン、第2級アンモニウムイオン、第3級アンモニウムイオン、第4級アンモニウムイオン、スルホニウムイオン、又はヨードニウムカチオンを示す。)で表される水酸基を有するアリールスルホン酸塩化合物を含むレジスト下層膜形成組成物、
第2観点として、Arがベンゼン環である第1観点に記載のレジスト下層膜形成組成物、
第3観点として、X+がアンモニウムイオンである第1観点に記載のレジスト下層膜形成組成物、
第4観点として、R1がメチル基、又はカルボキシル基を表す第1観点乃至第3観点のいずれか一つに記載のレジスト下層膜形成組成物、
第5観点として、m1が0であり、m2及びm3がそれぞれ1である第1観点乃至第4観点のいずれか一つに記載のレジスト下層膜形成組成物、
第6観点として、更に架橋剤を含む第1観点乃至第5観点のいずれか一つに記載のレジスト下層膜形成組成物、
第7観点として、第1観点乃至第6観点のいずれか一つに記載のレジスト下層膜形成組成物を半導体基板上に塗布し焼成することによって得られるレジスト下層膜、
第8観点として、第1観点乃至第6観点のいずれか一つに記載のレジスト下層膜形成組成物を半導体基板上に塗布し焼成してレジスト下層膜を形成する工程を含む半導体の製造に用いられるレジストパターンの形成方法、
第9観点として、半導体基板上に第1観点乃至第6観点のいずれか一つに記載のレジスト下層膜形成組成物によりレジスト下層膜を形成する工程、その上にレジスト膜を形成する工程、光又は電子線の照射と現像によりレジストパターンを形成する工程、形成されたレジストパターンにより該レジスト下層膜をエッチングする工程、及びパターン化されたレジスト下層膜により半導体基板を加工する工程を含む半導体装置の製造方法、
第10観点として、半導体基板に第1観点乃至第6観点のいずれか一つに記載のレジスト下層膜形成組成物によりレジスト下層膜を形成する工程、その上にハードマスクを形成する工程、更にその上にレジスト膜を形成する工程、光又は電子線の照射と現像によりレジストパターンを形成する工程、形成されたレジストパターンによりハードマスクをエッチングする工程、パターン化されたハードマスクにより前記レジスト下層膜をエッチングする工程、及びパターン化されたレジスト下層膜により半導体基板を加工する工程を含む半導体装置の製造方法、及び
第11観点として、ハードマスクが無機物の塗布又は無機物の蒸着により形成されたものである第10観点に記載の製造方法である。
式(1)で表される水酸基を有するアリールスルホン酸塩化合物は架橋触媒として用いることができる。
本発明において上記レジスト下層膜形成組成物はポリマーと上記式(1)で表される水酸基を有するアリールスルホン酸塩化合物と溶剤とを含む。そして、架橋剤を含むことができ、必要に応じて酸発生剤、界面活性剤等の添加剤を含むことができる。この組成物の固形分は0.1乃至70質量%、または0.1乃至60質量%である。固形分はレジスト下層膜形成組成物から溶剤を除いた全成分の含有割合である。固形分中にポリマーを1乃至99.9質量%、または50乃至99.9質量%、または50乃至95質量%、または50乃至90質量%の割合で含有することができる。
本発明に用いられるポリマーは、重量平均分子量が600乃至1000000、又は600乃至200000である。
エーテル結合を含む有機基はR11-O-R11(R11は各々独立にメチル基、エチル基等の炭素数1乃至6のアルキル基、アルキレン基や、フェニル基、フェニレン基を示す。)で示すことができ、例えば、メトキシ基、エトキシ基、フェノキシ基を含むエーテル結合を含む有機基が挙げられる。
ケトン結合を含む有機基はR21-C(=O)-R21(R21は各々独立にメチル基、エチル基等の炭素数1乃至6のアルキル基、アルキレン基や、フェニル基、フェニレン基を示す。)で示すことができ、例えばアセトキシ基やベンゾイル基を含むケトン結合を含む有機基が挙げられる。
エステル結合を含む有機基はR31-C(=O)O-R31(R31は各々独立にメチル基、エチル基等の炭素数1乃至6のアルキル基、アルキレン基や、フェニル基、フェニレン基を示す。)で示すことができ、例えばメチルエステルやエチルエステル、フェニルエステルなどのエステル結合を含む有機基が挙げられる。
この化合物は下記式(3)の部分構造を有する化合物や、下記式(4)の繰り返し単位を有するポリマー又はオリゴマーが挙げられる。
上記式(3)、式(4)中、R2、R3、R4、及びR5は水素原子又は炭素数1乃至10のアルキル基であり、これらのアルキル基は上述の例示を用いることができる。また、上記式(3)、式(4)中、n1は1乃至5の整数、n2は1乃至5の整数、(n1+n2)は2乃至6の整数を示し、n3は1乃至3の整数、n4は1乃至3の整数、(n3+n4)は2乃至4の整数を示す。
本発明におけるリソグラフィー用レジスト下層膜の上部に塗布されるフォトレジストとしてはネガ型、ポジ型いずれも使用でき、ノボラック樹脂と1,2-ナフトキノンジアジドスルホン酸エステルとからなるポジ型フォトレジスト、酸により分解してアルカリ溶解速度を上昇させる基を有するバインダーと光酸発生剤からなる化学増幅型フォトレジスト、アルカリ可溶性バインダーと酸により分解してフォトレジストのアルカリ溶解速度を上昇させる低分子化合物と光酸発生剤からなる化学増幅型フォトレジスト、酸により分解してアルカリ溶解速度を上昇させる基を有するバインダーと酸により分解してフォトレジストのアルカリ溶解速度を上昇させる低分子化合物と光酸発生剤からなる化学増幅型フォトレジスト、骨格にSi原子を有するフォトレジスト等があり、例えば、ロームアンドハース社製、商品名APEX-Eが挙げられる。
また電子線レジストの電子線照射は、例えば電子線照射装置を用い照射することができる。
p-フェノールスルホン酸(東京化成工業(株)製)2.26gにプロピレングリコールモノメチルエーテル9.04gを加えて溶解させた後、氷冷下、ピリジン1.03gを加えた。これを2-ブタノン50.00g中に加え、室温にて静置した。析出した結晶をろ過し、減圧乾燥することで、式(2-1)で表される架橋触媒を白色結晶として得た(2.12g)。尚、1H-NMRの積分比から算出したp-フェノールスルホン酸とピリジンの組成比率は1:0.95であった。
<合成例2>
p-フェノールスルホン酸(東京化成工業(株)製)2.07gにプロピレングリコールモノメチルエーテル8.28gを加えて溶解させた後、氷冷下、4-メチルピリジン1.10gを加えた。これを酢酸エチル50.00g中に加え、室温にて静置した。析出物をろ過し、減圧乾燥することで、式(2-17)で表される架橋触媒を淡橙色結晶として得た(2.32g)。尚、1H-NMRの積分比から算出したp-フェノールスルホン酸と4-メチルピリジンの組成比率は1:0.98であった。
<合成例3>
5-スルホサリチル酸(東京化成工業(株)製)2.04gにプロピレングリコールモノメチルエーテル8.16gを加えて溶解させた後、氷冷下、4-メチルピリジン0.87gを加えた。これを2-ブタノン50.00g中に加え、室温にて静置した。析出物をろ過し、減圧乾燥することで、式(2-22)で表される架橋触媒を白色結晶として得た(2.13g)。尚、1H-NMRの積分比から算出した5-スルホサリチル酸と4-メチルピリジンの組成比率は1:0.99であった。
<合成例4>
5-スルホサリチル酸(東京化成工業(株)製)2.03gに2-ブタノン20.00gを加えて溶解させた後、氷冷下、n-トリプロピルアミン1.33gを加え、室温にて静置した。析出物をろ過し、減圧乾燥することで、式(2-23)で表される架橋触媒を白色粉末として得た(2.00g)。尚、1H-NMRの積分比から算出した5-スルホサリチル酸とn-トリプロピルアミンの組成比率は1:0.99であった。
5-スルホサリチル酸(東京化成工業(株)製)2.06gに2-ブタノン20.00gを加えて溶解させた後、氷冷下、1-エチルピペリジン1.07gを加え、室温にて静置した。析出物をろ過し、減圧乾燥することで、式(2-24)で表される架橋触媒を白色粉末として得た(1.99g)。尚、1H-NMRの積分比から算出した5-スルホサリチル酸と1-エチルピペリジンの組成比率は1:0.99であった。
<合成例6>
5-スルホサリチル酸(東京化成工業(株)製)2.01gに2-ブタノン20.00gを加えて溶解させた後、氷冷下、モルホリン0.80gを加え、室温にて静置した。析出物をろ過し、減圧乾燥することで、式(2-25)で表される架橋触媒を淡黄色粉末として得た(2.25g)。尚、1H-NMRの積分比から算出した5-スルホサリチル酸とモルホリンの組成比率は1:1.22であった。
<合成例7>
5-スルホサリチル酸(東京化成工業(株)製)2.03gに2-ブタノン20.00gを加えて溶解させた後、氷冷下、4-メチルモルホリン0.94gと少量のメタノールを加え、室温にて静置した。析出物をろ過し、減圧乾燥することで、式(2-26)で表される架橋触媒を淡黄色粉末として得た(1.72g)。尚、1H-NMRの積分比から算出した5-スルホサリチル酸と4-メチルモルホリンの組成比率は1:1.00であった。
<合成例8>
o-クレゾール-4-スルホン酸溶液(関東化学(株)製)20.00gに氷冷下、ピリジン8.83gを加えた。これを2-ブタノン130.00g中に加え、室温にて静置した。析出物をろ過し、減圧乾燥することで、式(2-27)で表される架橋触媒を白色結晶として得た(16.24g)。尚、1H-NMRの積分比から算出したo-クレゾール-4-スルホン酸とピリジンの組成比率は1:1.05であった。
下記式(6-1)で示されるレジスト下層膜形成組成物用のノボラック樹脂1.02g、架橋剤として3,3’,5,5’-テトラメトキシメチルー4,4’-ビスフェノール(商品名:TMOM-BP、本州化学工業(株)製)0.20g、合成例1で得た架橋触媒0.03gをプロピレングリコールモノメチルエーテル4.75g、プロピレングリコールモノメチルエーテルアセテート14.25g、シクロヘキサノン4.75gに溶解させ、リソグラフィー用レジスト下層膜形成組成物の溶液を調製した。
前記式(6-1)で示されるレジスト下層膜形成組成物用のノボラック樹脂1.02g、架橋剤として3,3’,5,5’-テトラメトキシメチルー4,4’-ビスフェノール(商品名:TMOM-BP、本州化学工業(株)製)0.20g、合成例2で得た架橋触媒0.03gをプロピレングリコールモノメチルエーテル4.75g、プロピレングリコールモノメチルエーテルアセテート14.25g、シクロヘキサノン4.75gに溶解させ、リソグラフィー用レジスト下層膜形成組成物の溶液を調製した。
<実施例3>
前記式(6-1)で示されるレジスト下層膜形成組成物用のノボラック樹脂1.02g、架橋剤として3,3’,5,5’-テトラメトキシメチルー4,4’-ビスフェノール(商品名:TMOM-BP、本州化学工業(株)製)0.20g、合成例3で得た架橋触媒0.03gをプロピレングリコールモノメチルエーテル4.75g、プロピレングリコールモノメチルエーテルアセテート14.25g、シクロヘキサノン4.75gに溶解させ、リソグラフィー用レジスト下層膜形成組成物の溶液を調製した。
<実施例4>
前記式(6-1)で示されるレジスト下層膜形成組成物用のノボラック樹脂1.02g、架橋剤として3,3’,5,5’-テトラメトキシメチルー4,4’-ビスフェノール(商品名:TMOM-BP、本州化学工業(株)製)0.20g、合成例4で得た架橋触媒0.03gをプロピレングリコールモノメチルエーテル4.75g、プロピレングリコールモノメチルエーテルアセテート14.25g、シクロヘキサノン4.75gに溶解させ、リソグラフィー用レジスト下層膜形成組成物の溶液を調製した。
<実施例5>
前記式(6-1)で示されるレジスト下層膜形成組成物用のノボラック樹脂1.02g、架橋剤として3,3’,5,5’-テトラメトキシメチルー4,4’-ビスフェノール(商品名:TMOM-BP、本州化学工業(株)製)0.20g、合成例5で得た架橋触媒0.03gをプロピレングリコールモノメチルエーテル4.75g、プロピレングリコールモノメチルエーテルアセテート14.25g、シクロヘキサノン4.75gに溶解させ、リソグラフィー用レジスト下層膜形成組成物の溶液を調製した。
前記式(6-1)で示されるレジスト下層膜形成組成物用のノボラック樹脂1.02g、架橋剤として3,3’,5,5’-テトラメトキシメチルー4,4’-ビスフェノール(商品名:TMOM-BP、本州化学工業(株)製)0.20g、合成例6で得た架橋触媒0.03gをプロピレングリコールモノメチルエーテル4.75g、プロピレングリコールモノメチルエーテルアセテート14.25g、シクロヘキサノン4.75gに溶解させ、リソグラフィー用レジスト下層膜形成組成物の溶液を調製した。
<実施例7>
前記式(6-1)で示されるレジスト下層膜形成組成物用のノボラック樹脂1.02g、架橋剤として3,3’,5,5’-テトラメトキシメチルー4,4’-ビスフェノール(商品名:TMOM-BP、本州化学工業(株)製)0.20g、合成例7で得た架橋触媒0.03gをプロピレングリコールモノメチルエーテル4.75g、プロピレングリコールモノメチルエーテルアセテート14.25g、シクロヘキサノン4.75gに溶解させ、リソグラフィー用レジスト下層膜形成組成物の溶液を調製した。
<実施例8>
前記式(6-1)で示されるレジスト下層膜形成組成物用のノボラック樹脂1.02g、架橋剤として3,3’,5,5’-テトラメトキシメチルー4,4’-ビスフェノール(商品名:TMOM-BP、本州化学工業(株)製)0.20g、合成例8で得た架橋触媒0.03gをプロピレングリコールモノメチルエーテル4.75g、プロピレングリコールモノメチルエーテルアセテート14.25g、シクロヘキサノン4.75gに溶解させ、リソグラフィー用レジスト下層膜形成組成物の溶液を調製した。
<実施例9>
前記式(6-1)で示されるレジスト下層膜形成組成物用のノボラック樹脂1.25g、合成例1で得た架橋触媒0.04gをプロピレングリコールモノメチルエーテル4.75g、プロピレングリコールモノメチルエーテルアセテート14.25g、シクロヘキサノン4.75gに溶解させ、リソグラフィー用レジスト下層膜形成組成物の溶液を調製した。尚、本実施例のレジスト下層膜形成組成物には架橋剤を含有していない。
下記式(6-2)で示されるレジスト下層膜形成組成物用のノボラック樹脂1.02g、架橋剤として3,3’,5,5’-テトラメトキシメチルー4,4’-ビスフェノール(商品名:TMOM-BP、本州化学工業(株)製)0.20g、合成例1で得た架橋触媒0.03gをプロピレングリコールモノメチルエーテル2.38g、プロピレングリコールモノメチルエーテルアセテート7.13g、シクロヘキサノン14.25gに溶解させ、リソグラフィー用レジスト下層膜形成組成物の溶液を調製した。
下記式(6-3)で示されるレジスト下層膜形成組成物用のポリイミド樹脂0.98g、架橋剤としてテトラメトキシメチルグリコールウリル(商品名:POWDERLINK〔登録商標〕1174、日本サイテックインダストリーズ(株)製)0.25g、合成例1で得た架橋触媒0.02gをプロピレングリコールモノメチルエーテル16.63g、プロピレングリコールモノメチルエーテルアセテート7.13gに溶解させ、リソグラフィー用レジスト下層膜形成組成物の溶液を調製した。
下記式(6-4)で示されるレジスト下層膜形成組成物用のポリエステル樹脂0.98g、架橋剤としてテトラメトキシメチルグリコールウリル(商品名:POWDERLINK〔登録商標〕1174、日本サイテックインダストリーズ(株)製)0.25g、合成例1で得た架橋触媒0.02gをプロピレングリコールモノメチルエーテル16.63g、プロピレングリコールモノエチルエーテル7.13gに溶解させ、リソグラフィー用レジスト下層膜形成組成物の溶液を調製した。
下記式(6-5)で示されるレジスト下層膜形成組成物用のアクリル樹脂0.98g、架橋剤としてテトラメトキシメチルグリコールウリル(商品名:POWDERLINK〔登録商標〕1174、日本サイテックインダストリーズ(株)製)0.25g、合成例1で得た架橋触媒0.02gをプロピレングリコールモノメチルエーテル21.38g、プロピレングリコールモノメチルエーテルアセテート2.38gに溶解させ、リソグラフィー用レジスト下層膜形成組成物の溶液を調製した。
前記式(6-1)で示されるレジスト下層膜形成組成物用ノボラック樹脂1.02g、架橋剤として3,3’,5,5’-テトラメトキシメチルー4,4’-ビスフェノール(商品名:TMOM-BP、本州化学工業(株)製)0.20g、架橋触媒として式(7-1)で示すピリジニウム-p-トルエンスルホナート(東京化成工業(株)製)0.03gをプロピレングリコールモノメチルエーテル4.75g、プロピレングリコールモノメチルエーテルアセテート14.25g、シクロヘキサノン4.75gに溶解させ、リソグラフィー用レジスト下層膜形成組成物の溶液を調製した。
<比較例2>
前記式(6-1)で示されるレジスト下層膜形成組成物用のノボラック樹脂1.25g、架橋触媒として前記式(7-1)で示すピリジニウム-p-トルエンスルホナート(東京化成工業(株)製)0.04gをプロピレングリコールモノメチルエーテル4.75g、プロピレングリコールモノメチルエーテルアセテート14.25g、シクロヘキサノン4.75gに溶解させ、リソグラフィー用レジスト下層膜形成組成物の溶液を調製した。尚、本実施例のレジスト下層膜形成組成物には架橋剤を含有していない。
<比較例3>
前記式(6-2)で示されるレジスト下層膜形成組成物用のノボラック樹脂1.02g、架橋剤として3,3’,5,5’-テトラメトキシメチルー4,4’-ビスフェノール(商品名:TMOM-BP、本州化学工業(株)製)0.20g、架橋触媒として前記式(7-1)で示すピリジニウム-p-トルエンスルホナート(東京化成工業(株)製)0.03gをプロピレングリコールモノメチルエーテル2.38g、プロピレングリコールモノメチルエーテルアセテート7.13g、シクロヘキサノン14.25gに溶解させ、リソグラフィー用レジスト下層膜形成組成物の溶液を調製した。
前記式(6-3)で示されるレジスト下層膜形成組成物用のポリイミド樹脂0.98g、架橋剤としてテトラメトキシメチルグリコールウリル(商品名:POWDERLINK〔登録商標〕1174、日本サイテックインダストリーズ(株)製)0.25g、架橋触媒として前記式(7-1)で示すピリジニウム-p-トルエンスルホナート(東京化成工業(株)製)0.02gをプロピレングリコールモノメチルエーテル16.63g、プロピレングリコールモノメチルエーテルアセテート7.13gに溶解させ、リソグラフィー用レジスト下層膜形成組成物の溶液を調製した。
<比較例5>
前記式(6-4)で示されるレジスト下層膜形成組成物用のポリエステル樹脂0.98g、架橋剤としてテトラメトキシメチルグリコールウリル(商品名:POWDERLINK〔登録商標〕1174、日本サイテックインダストリーズ(株)製)0.25g、架橋触媒として前記式(7-1)で示すピリジニウム-p-トルエンスルホナート(東京化成工業(株)製)0.02gをプロピレングリコールモノメチルエーテル16.63g、プロピレングリコールモノエチルエーテル7.13gに溶解させ、リソグラフィー用レジスト下層膜形成組成物の溶液を調製した。
<比較例6>
前記式(6-5)で示されるレジスト下層膜形成組成物用のアクリル樹脂0.98g、架橋剤としてテトラメトキシメチルグリコールウリル(商品名:POWDERLINK〔登録商標〕1174、日本サイテックインダストリーズ(株)製)0.25g、架橋触媒として前記式(7-1)で示すピリジニウム-p-トルエンスルホナート(東京化成工業(株)製)0.02gをプロピレングリコールモノメチルエーテル21.38g、プロピレングリコールモノメチルエーテルアセテート2.38gに溶解させ、リソグラフィー用レジスト下層膜形成組成物の溶液を調製した。
前記式(6-1)で示されるレジスト下層膜形成組成物用のノボラック樹脂1.02g、架橋剤として3,3’,5,5’-テトラメトキシメチルー4,4’-ビスフェノール(商品名:TMOM-BP、本州化学工業(株)製)0.20g、架橋触媒として式(7-2)で示すp-フェノールスルホン酸水和物(東京化成工業(株)製)0.03gをプロピレングリコールモノメチルエーテル4.75g、プロピレングリコールモノメチルエーテルアセテート14.25g、シクロヘキサノン4.75gに溶解させ、リソグラフィー用レジスト下層膜形成組成物の溶液を調製した。
昇華物量の測定は国際公開第2007/111147号パンフレットに記載されている昇華物量測定装置を用いて実施した。まず、直径4インチのシリコンウェハー基板に、実施例1乃至実施例13、比較例1乃至比較例6で調製したレジスト下層膜形成組成物をスピンコーターにて、膜厚100nmとなるように塗布した。レジスト下層膜が塗布されたウェハーをホットプレートが一体化した前記昇華物量測定装置にセットし、120秒間ベークし、昇華物をQCM(Quartz Crystal Microbalance)センサー、すなわち電極が形成された水晶振動子に捕集した。QCMセンサーは、水晶振動子の表面(電極)に昇華物が付着するとその質量に応じて水晶振動子の周波数が変化する(下がる)性質を利用して、微量の質量変化を測定することができる。
得られた周波数変化を、測定に使用した水晶振動子の固有値からグラムに換算し、レジスト下層膜が塗布されたウェハー1枚の昇華物量と時間経過との関係を明らかにした。尚、最初の60秒間は装置安定化のために放置した(ウェハーをセットしていない)時間帯であり、ウェハーをホットプレートに載せた60秒の時点から180秒の時点までの測定値がウェハーの昇華物量に関する測定値である。当該装置から定量したレジスト下層膜の昇華物量を昇華物量比として表1乃至表6に示す。尚、昇華物量比とは比較例1乃至比較例6のレジスト下層膜から発生した昇華物量を1として規格化した値で表す。
実施例1及び比較例7のレジスト下層膜形成組成物をシリコンウエハーに膜厚100nmとなるように塗布し、前記の昇華物量測定装置を用いて、240℃、60秒間焼成した際にレジスト下層膜から発生する昇華物量を測定した。この時に発生した昇華物量は前記の比較例1のレジスト下層膜から発生した昇華物量を1として規格化した値で表す(SA)。次に、このレジスト下層膜形成組成物を35℃2週間の条件で保存試験を行い、再び当該装置を用いて昇華物量を測定した。この時に発生した昇華物量は保存試験前に測定した前記の比較例1のレジスト下層膜から発生した昇華物量を1として規格化した値で表す(SB)。保存試験前後の昇華物量比の増減率(SB/SA)を算出することによって、レジスト下層膜のエイジング(劣化)の度合いを昇華物量測定から評価した。すなわち、保存試験前後の昇華物量比の増減率(SB/SA)が大きいほど、レジスト下層膜からの昇華物量が増加し、保存試験によってエイジングが生じやすい。尚、保存試験前の昇華物量(SA)、保存試験後の昇華物量(SB)及び昇華物量の増減率(SB/SA)を表7に示す。
Claims (11)
- 下記式(1):
(式中、Arはベンゼン環又はベンゼン環が縮合した芳香族炭化水素環を示し、R1はそれぞれ芳香環上の水素原子の置換基であって、ニトロ基、アミノ基、カルボキシル基、ハロゲン原子、炭素数1乃至10のアルコキシ基、炭素数1乃至10のアルキル基、炭素数2乃至10のアルケニル基、炭素数6乃至40のアリール基、エーテル結合を含む有機基、ケトン結合を含む有機基、エステル結合を含む有機基、又はそれらを組み合わせた基を表す。m1は0乃至(2+2n)の整数であり、m2及びm3はそれぞれ1乃至(3+2n)の整数であり、(m1+m2+m3)は2乃至(4+2n)の整数を示す。ただし、nはベンゼン環の数又は芳香族炭化水素環において縮合したベンゼン環の数を表し、1乃至6の整数である。X+はNH4 +、第1級アンモニウムイオン、第2級アンモニウムイオン、第3級アンモニウムイオン、第4級アンモニウムイオン、スルホニウムイオン、又はヨードニウムカチオンを示す。)で表される水酸基を有するアリールスルホン酸塩化合物を含むレジスト下層膜形成組成物。 - Arがベンゼン環である請求項1に記載のレジスト下層膜形成組成物。
- X+がアンモニウムイオンである請求項1に記載のレジスト下層膜形成組成物。
- R1がメチル基、又はカルボキシル基を表す請求項1乃至請求項3のいずれか1項に記載のレジスト下層膜形成組成物。
- m1が0であり、m2及びm3がそれぞれ1である請求項1乃至請求項4のいずれか1項に記載のレジスト下層膜形成組成物。
- 更に架橋剤を含む請求項1乃至請求項5のいずれか1項に記載のレジスト下層膜形成組成物。
- 請求項1乃至請求項6のいずれか1項に記載のレジスト下層膜形成組成物を半導体基板上に塗布し焼成することによって得られるレジスト下層膜。
- 請求項1乃至請求項6のいずれか1項に記載のレジスト下層膜形成組成物を半導体基板上に塗布し焼成してレジスト下層膜を形成する工程を含む半導体の製造に用いられるレジストパターンの形成方法。
- 半導体基板上に請求項1乃至請求項6のいずれか1項に記載のレジスト下層膜形成組成物によりレジスト下層膜を形成する工程、その上にレジスト膜を形成する工程、光又は電子線の照射と現像によりレジストパターンを形成する工程、形成されたレジストパターンにより該レジスト下層膜をエッチングする工程、及びパターン化されたレジスト下層膜により半導体基板を加工する工程を含む半導体装置の製造方法。
- 半導体基板に請求項1乃至請求項6のいずれか1項に記載のレジスト下層膜形成組成物によりレジスト下層膜を形成する工程、その上にハードマスクを形成する工程、更にその上にレジスト膜を形成する工程、光又は電子線の照射と現像によりレジストパターンを形成する工程、形成されたレジストパターンによりハードマスクをエッチングする工程、パターン化されたハードマスクにより前記レジスト下層膜をエッチングする工程、及びパターン化されたレジスト下層膜により半導体基板を加工する工程を含む半導体装置の製造方法。
- ハードマスクが無機物の塗布又は無機物の蒸着により形成されたものである請求項10に記載の製造方法。
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JP6256719B2 (ja) | 2018-01-10 |
JPWO2014129582A1 (ja) | 2017-02-02 |
TWI637239B (zh) | 2018-10-01 |
US20150378260A1 (en) | 2015-12-31 |
KR102206511B1 (ko) | 2021-01-22 |
CN105027005B (zh) | 2020-02-07 |
US9395628B2 (en) | 2016-07-19 |
KR20150123221A (ko) | 2015-11-03 |
CN105027005A (zh) | 2015-11-04 |
TW201500858A (zh) | 2015-01-01 |
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