TW201500858A - 含有具有羥基之芳基磺酸鹽的光阻下層膜形成組成物 - Google Patents
含有具有羥基之芳基磺酸鹽的光阻下層膜形成組成物 Download PDFInfo
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- TW201500858A TW201500858A TW103106265A TW103106265A TW201500858A TW 201500858 A TW201500858 A TW 201500858A TW 103106265 A TW103106265 A TW 103106265A TW 103106265 A TW103106265 A TW 103106265A TW 201500858 A TW201500858 A TW 201500858A
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- Prior art keywords
- underlayer film
- photoresist
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- photoresist underlayer
- methyl
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- 239000000203 mixture Substances 0.000 title claims abstract description 115
- 125000002887 hydroxy group Chemical group [H]O* 0.000 title claims abstract description 17
- 125000005228 aryl sulfonate group Chemical group 0.000 title description 7
- -1 aryl sulfonate salt compound Chemical class 0.000 claims abstract description 157
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 14
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims abstract 4
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- 239000000126 substance Substances 0.000 claims description 35
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- 238000011161 development Methods 0.000 claims description 6
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- 238000012545 processing Methods 0.000 claims description 6
- 125000003342 alkenyl group Chemical group 0.000 claims description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 5
- 238000009833 condensation Methods 0.000 claims description 4
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- 150000002148 esters Chemical class 0.000 description 4
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- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 4
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 3
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- 125000000636 p-nitrophenyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)[N+]([O-])=O 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- HKOOXMFOFWEVGF-UHFFFAOYSA-N phenylhydrazine Chemical group NNC1=CC=CC=C1 HKOOXMFOFWEVGF-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 125000001844 prenyl group Chemical group [H]C([*])([H])C([H])=C(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- ILVGAIQLOCKNQA-UHFFFAOYSA-N propyl 2-hydroxypropanoate Chemical compound CCCOC(=O)C(C)O ILVGAIQLOCKNQA-UHFFFAOYSA-N 0.000 description 1
- ILPVOWZUBFRIAX-UHFFFAOYSA-N propyl 2-oxopropanoate Chemical compound CCCOC(=O)C(C)=O ILPVOWZUBFRIAX-UHFFFAOYSA-N 0.000 description 1
- JCMFJIHDWDKYIL-UHFFFAOYSA-N propyl 3-methoxypropanoate Chemical compound CCCOC(=O)CCOC JCMFJIHDWDKYIL-UHFFFAOYSA-N 0.000 description 1
- FOWDZVNRQHPXDO-UHFFFAOYSA-N propyl hydrogen carbonate Chemical compound CCCOC(O)=O FOWDZVNRQHPXDO-UHFFFAOYSA-N 0.000 description 1
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- YGSDEFSMJLZEOE-UHFFFAOYSA-M salicylate Chemical compound OC1=CC=CC=C1C([O-])=O YGSDEFSMJLZEOE-UHFFFAOYSA-M 0.000 description 1
- 229960001860 salicylate Drugs 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 229940100515 sorbitan Drugs 0.000 description 1
- 229940035044 sorbitan monolaurate Drugs 0.000 description 1
- 239000001593 sorbitan monooleate Substances 0.000 description 1
- 235000011069 sorbitan monooleate Nutrition 0.000 description 1
- 229940035049 sorbitan monooleate Drugs 0.000 description 1
- 239000001587 sorbitan monostearate Substances 0.000 description 1
- 235000011076 sorbitan monostearate Nutrition 0.000 description 1
- 229940035048 sorbitan monostearate Drugs 0.000 description 1
- 239000001589 sorbitan tristearate Substances 0.000 description 1
- 235000011078 sorbitan tristearate Nutrition 0.000 description 1
- 229960004129 sorbitan tristearate Drugs 0.000 description 1
- 150000003459 sulfonic acid esters Chemical class 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- NXCGORFGROUVLU-UHFFFAOYSA-N triethyl(3-phenylpropyl)azanium Chemical compound CC[N+](CC)(CC)CCCC1=CC=CC=C1 NXCGORFGROUVLU-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- XYUGFPLAOGMREF-UHFFFAOYSA-N trimethyl(2-phenylethyl)azanium Chemical compound C[N+](C)(C)CCC1=CC=CC=C1 XYUGFPLAOGMREF-UHFFFAOYSA-N 0.000 description 1
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical class C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
- 210000002700 urine Anatomy 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
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- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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Abstract
本發明之課題為,提供焙燒過程中減少由光阻下層膜中所發生之昇華物量,且抑制老化之具有較高保存安定性的光阻下層膜形成組成物。
解決方法為,如請求項1之含有下述式(1):
□(式中,Ar表示苯環或苯環縮合所得之芳香族烴
環;m1為0至(2+2n)之整數,m2及m3各自為1至(3+2n)之整數,(m1+m2+m3)表示2至(4+2n)之整數。又,n表示苯環之數或芳香族烴環中縮合之苯環之數,為1至6之整數;X+表示NH4+、1級銨離子、2級銨離子、3級銨離子、4級銨離子、鋶離子、或碘鎓陽離子)所表示的具有羥基之芳基磺酸鹽化合物的光阻下層膜形成組成物。
Description
本發明係有關半導體基板加工時有效之平版印刷用光阻下層膜形成組成物用交聯觸媒,及含有其之光阻下層膜形成組成物,與使用該光阻下層膜形成組成物之光阻圖型形成法,及半導體裝置之製造方法。
目前為止製造半導體裝置時,係藉由使用光阻劑組成物之平版印刷進行微細加工。前述微細加工為,於矽晶圓等被加工基板上形成光阻劑組成物之薄膜後,於其上方介由描繪半導體裝置之圖型的遮罩圖型照射紫外線等活性光線,顯像後以光阻劑圖型作為保護膜蝕刻處理矽晶圓等之被加工基板的加工法。但近年來隨著半導體裝置之高積體度化發展,所使用之活性光線也由KrF準分子雷射(248nm)趨向短波長化之ArF準分子雷射(193nm)。因此會有活性光線深受來自基板之亂反射及駐波影響的問題,故廣泛地使用有於光阻劑與被加工基板
之間設置稱為防反射膜(BottomAnti-Reflective Coating,BARC)之光阻下層膜的方法。又,為了進行更微細之加工,也展開活性光線使用極端紫外線(EUV,13.5nm)及電子線(EB)之平版印刷技術的開發。EUV平版印刷及EB平版印刷中一般無需具有防止來自基板之亂反射及駐波用的特定防反射膜,但為了改善光阻圖型之解析度及密合性而開始廣泛檢討作為補助膜用之光阻下層膜。
該類形成於光阻劑與被加工基板之間的光阻下層膜,為了抑制與層合於上層之光阻混合,一般係將光阻下層膜形成組成物塗佈於被加工基板上後,經由焙燒步驟形成不會與光阻混合之熱硬化性交聯膜。通常光阻下層膜形成組成物為了形成該類熱硬化膜,除了主要成分之聚合物樹脂外,另添加交聯性化合物(交聯劑)及促進交聯反應用之觸媒(交聯觸媒)。特別是交聯觸媒主要係使用磺酸化合物、羧酸化合物、磺酸酯等之熱酸產生劑。
但近年來製造半導體裝置之平版印刷過程中會出現,使用前述光阻下層膜形成組成物形成光阻下層膜時,焙燒時會發生來自前述聚合物樹脂、交聯劑、交聯觸媒等之低分子化合物的昇華成分(昇華物)之新問題。該類昇華物於製造半導體裝置過程中,會因附著、蓄積於成膜裝置內而污染裝置內部,恐成為晶圓附著異物而發生缺陷(瑕疵)等之要因。因此需求可限制由該類光阻下層膜發生之昇華物般新穎之下層膜形成組成物的提案,同時展開檢討該類具有低昇華物性之光阻下層膜(例如參考專利
文獻1、專利文獻2)。
專利文獻1:特開2009-175436
專利文獻2:特開2010-237491
該類昇華物發生起因之一為,廣泛作為光阻下層膜形成組成物之交聯觸媒用的熱酸產生劑之芳基磺酸鹽類(例如吡啶鎓-p-甲苯磺酸鹽等)於光阻下層膜形成組成物中表現為中性或弱酸性,因此為了產生交聯反應所必需之強酸而需熱分解。即,該類芳基磺酸鹽類於光阻下層膜之成膜溫度(焙燒溫度)下,會降低作用為交聯反應之觸媒用的酸之發生效率,而無法充分進行交聯反應,易導致低分子化合物昇華。另外同樣廣泛作為交聯觸媒用之芳基磺酸類(例如P-甲苯磺酸等)於光阻下層膜形成組成物中表現為強酸性,因此可有效具有作為交聯觸媒用之作用。但該類芳基磺酸類為強酸,故易與光阻下層膜形成組成物中之聚合物樹脂及交聯劑等產生相互作用,恐發生光阻下層膜精製組成物之品質劣化(老化)。
本發明係基於解決該類課題之發明,其目的為提供可有效抑制以往光阻下層膜成膜時發生的昇華物,
且減少光阻下層膜形成組成物老化的光阻下層膜形成組成物用交聯觸媒,及含有其之光阻下層膜形成組成物,與使用該光阻下層膜形成組成物之光阻圖型形成法,及半導體裝置之製造方法。
本發明之第1觀點為一種光阻下層膜形成組成物,其為含有下述式(1):
(式中,Ar表示苯環或苯環縮合所得之芳香族烴環,R1各自表示芳香環上氫原子之取代基的硝基、胺基、羧基、鹵原子、碳數1至10之烷氧基、碳數1至10之烷基、碳數2至10之鏈烯基、碳數6至40之芳基、含有醚鍵之有機基、含有酮鍵之有機基、含有酯鍵之有機基,或組合該等之基;m1為0至(2+2n)之整數,m2及m3各自為1至(3+2n)之整數,(m1+m2+m3)表示2至(4+2n)之整數;又,n表示苯環之數或芳香族烴環中縮
合之苯環之數,為1至6之整數;X+表示NH4 +、1級銨離子、2級銨離子、3級銨離子、4級銨離子、鋶離子、或碘鎓陽離子)所表示之具有羥基的芳基磺酸鹽化合物,第2觀點如第1觀點之光阻下層膜形成組成物,其中Ar為苯環,第3觀點如第1觀點之光阻下層膜形成組成物,其中X+為銨離子,第4觀點如第1觀點至第3觀點中任一項之光阻下層膜形成組成物,其中R1表示甲基,或羧基,第5觀點如第1觀點至第4觀點中任一項之光阻下層膜形成組成物,其中m1為0,m2及m3各自為1,第6觀點如第1觀點至第5觀點中任一項之光阻下層膜形成組成物,其中另含有交聯劑,第7觀點為一種光阻下層膜,其為藉由將如第1觀點至第6觀點中任一項之光阻下層膜形成組成物塗佈於半導體基板上焙燒所得,第8觀點為一種製造半導體用之光阻圖型的形成方法,其為含有將如第1觀點至第6觀點中任一項之光阻下層膜形成組成物塗佈於半導體基板上焙燒形成光阻下層膜之步驟,第9觀點為一種半導體裝置之製造方法,其為包含,藉由如第1觀點至第6觀點中任一項之光阻下層膜形成組成物於半導體基板上形成光阻下層膜之步驟,其上方形成光阻膜之步驟,藉由照射光或電子線與顯像而形成光阻圖
型之步驟,藉由所形成之光阻圖型蝕刻該光阻下層膜之步驟,及藉由圖型化之光阻下層膜加工半導體基板之步驟,第10觀點為一種半導體裝置之製造方法,其為包含,藉由如第1觀點至第6觀點中任一項之光阻下層膜形成組成物於半導體基板上形成光阻下層膜之步驟,其上方形成硬遮罩之步驟,再於其上方形成光阻膜之步驟,藉由照射光或電子線與顯像而形成光阻圖型之步驟,藉由所形成之光阻圖型蝕刻硬遮罩之步驟,藉由圖型化之硬遮罩蝕刻前述光阻下層膜之步驟,及藉由圖型化之光阻下層膜加工半導體基板之步驟,以及第11觀點如第10觀點之製造方法,其中硬遮罩為藉由塗佈無機物或蒸鍍無機物所形成之物。
本發明之光阻下層膜形成組成物用交聯觸媒為,特徵係芳基磺酸鹽之芳香族環的部分氫原子被羥基取代之物,含有其之光阻下層膜形成組成物為,含有該類交聯觸媒、聚合物樹脂及溶劑,另可含有交聯劑。本發明之交聯觸媒係藉由具有羥基,提高所發生之芳基磺酸的酸性度,除了可促進焙燒步驟之交聯反應,該羥基也具有作為交聯部位用之作用,故可有效抑制成膜時來自光阻下層膜中之低分子成分的昇華物。因此將光阻下層膜形成組成物塗佈於被加工基板上,焙燒形成光阻下層膜時可抑制發生的昇華物,且減少因昇華物再附著於所形成之光阻下層膜
而發生缺陷等。
另外本發明之光阻下層膜形成組成物用交聯觸媒係形成銨鹽、鋶或碘鎓鹽之物,故為可僅藉由焙燒步驟之熱分解而發生磺酸之熱酸產生劑,因此於光阻下層膜形成組成物中展現為中性或弱酸性,不易與聚合物樹脂及交聯劑發生相互作用,可抑制因老化而使品質劣化。
本發明為含有式(1)所表示之具有羥基的芳基磺酸鹽化合物之光阻下層膜形成組成物。
式(1)所表示之具有羥基的芳基磺酸鹽化合物可作為交聯觸媒用。
本發明中上述光阻下層膜形成組成物為含有聚合物與上述式(1)所表示之羥基的芳基磺酸鹽化合物與溶劑。又,可含有交聯劑,且必要時可含有酸產生劑、表面活性劑等之添加劑。該組成物之固體成分為0.1至70質量%,或0.1至60質量%。固體成分為由光阻下層膜形成組成物去除溶劑後全部成分之含有比例。固體成分中可以1至99.9質量%,或50至99.9質量%,或50至95質量%,或50至90質量%之比例含有聚合物。
本發明所使用之聚合物為,重量平均分子量為600至1000000,或600至200000。
式(1)所表示之具有羥基的芳基磺酸鹽化合物中,Ar表示苯環或苯環縮合所得之芳香族烴環,R1各
自表示芳香環上氫原子之取代基的硝基、胺基、羧基、鹵原子、碳數1至10之烷氧基、碳數1至10之烷基、碳數2至10之鏈烯基、碳數6至40之芳基、含有醚鍵之有機基、含有酮鍵之有機基、含有酯鍵之有機基,或該等組合之基。m1為0至(2+2n)之整數,m2及m3各自為1至(3+2n)之整數,(m1+m2+m3)表示2至(4+2n)之整數。又,n表示苯環之數或芳香族烴環上縮合之苯環之數,為1至6之整數。X+表示NH4 +、1級銨離子、2級銨離子、3級銨離子、4級銨離子、鋶離子、或碘鎓陽離子。
上述碳數1至10之烷氧基如,甲氧基、乙氧基、n-丙氧基、i-丙氧基、n-丁氧基、i-丁氧基、s-丁氧基、t-丁氧基、n-戊氧基、1-甲基-n-丁氧基、2-甲基-n-丁氧基、3-甲基-n-丁氧基、1,1-二甲基-n-丙氧基、1,2-二甲基-n-丙氧基、2,2-二甲基-n-丙氧基、1-乙基-n-丙氧基、n-己氧基、1-甲基-n-戊氧基、2-甲基-n-戊氧基、3-甲基-n-戊氧基、4-甲基-n-戊氧基、1,1-二甲基-n-丁氧基、1,2-二甲基-n-丁氧基、1,3-二甲基-n-丁氧基、2,2-二甲基-n-丁氧基、2,3-二甲基-n-丁氧基、3,3-二甲基-n-丁氧基、1-乙基-n-丁氧基、2-乙基-n-丁氧基、1,1,2-三甲基-n-丙氧基、1,2,2-三甲基-n-丙氧基、1-乙基-1-甲基-n-丙氧基、及1-乙基-2-甲基-n-丙氧基等。
上述碳數1至10之烷基如,甲基、乙基、n-丙基、i-丙基、環丙基、n-丁基、i-丁基、s-丁基、t-丁
基、環丁基、1-甲基-環丙基、2-甲基-環丙基、n-戊基、1-甲基-n-丁基、2-甲基-n-丁基、3-甲基-n-丁基、1,1-二甲基-n-丙基、1,2-二甲基-n-丙基、2,2-二甲基-n-丙基、1-乙基-n-丙基、環戊基、1-甲基-環丁基、2-甲基-環丁基、3-甲基-環丁基、1,2-二甲基-環丙基、2,3-二甲基-環丙基、1-乙基-環丙基、2-乙基-環丙基、n-己基、1-甲基-n-戊基、2-甲基-n-戊基、3-甲基-n-戊基、4-甲基-n-戊基、1,1-二甲基-n-丁基、1,2-二甲基-n-丁基、1,3-二甲基-n-丁基、2,2-二甲基-n-丁基、2,3-二甲基-n-丁基、3,3-二甲基-n-丁基、1-乙基-n-丁基、2-乙基-n-丁基、1,1,2-三甲基-n-丙基、1,2,2-三甲基-n-丙基、1-乙基-1-甲基-n-丙基、1-乙基-2-甲基-n-丙基、環己基、1-甲基-環戊基、2-甲基-環戊基、3-甲基-環戊基、1-乙基-環丁基、2-乙基-環丁基、3-乙基-環丁基、1,2-二甲基-環丁基、1,3-二甲基-環丁基、2,2-二甲基-環丁基、2,3-二甲基-環丁基、2,4-二甲基-環丁基、3,3-二甲基-環丁基、1-n-丙基-環丙基、2-n-丙基-環丙基、1-i-丙基-環丙基、2-i-丙基-環丙基、1,2,2-三甲基-環丙基、1,2,3-三甲基-環丙基、2,2,3-三甲基-環丙基、1-乙基-2-甲基-環丙基、2-乙基-1-甲基-環丙基、2-乙基-2-甲基-環丙基及2-乙基-3-甲基-環丙基等。
上述碳數2至10之鏈烯基如,乙烯基、1-丙烯基、2-丙烯基、1-甲基-1-乙烯基、1-丁烯基、2-丁烯基、3-丁烯基、2-甲基-1-丙烯基、2-甲基-2-丙烯基、1-乙基乙烯基、1-甲基-1-丙烯基、1-甲基-2-丙烯基、1-戊烯
基、2-戊烯基、3-戊烯基、4-戊烯基、1-n-丙基乙烯基、1-甲基-1-丁烯基、1-甲基-2-丁烯基、1-甲基-3-丁烯基、2-乙基-2-丙烯基、2-甲基-1-丁烯基、2-甲基-2-丁烯基、2-甲基-3-丁烯基、3-甲基-1-丁烯基、3-甲基-2-丁烯基、3-甲基-3-丁烯基、1,1-二甲基-2-丙烯基、1-i-丙基乙烯基、1,2-二甲基-1-丙烯基、1,2-二甲基-2-丙烯基、1-環戊烯基、2-環戊烯基、3-環戊烯基、1-己烯基、2-己烯基、3-己烯基、4-己烯基、5-己烯基、1-甲基-1-戊烯基、1-甲基-2-戊烯基、1-甲基-3-戊烯基、1-甲基-4-戊烯基、1-n-丁基乙烯基、2-甲基-1-戊烯基、2-甲基-2-戊烯基、2-甲基-3-戊烯基、2-甲基-4-戊烯基、2-n-丙基-2-丙烯基、3-甲基-1-戊烯基、3-甲基-2-戊烯基、3-甲基-3-戊烯基、3-甲基-4-戊烯基、3-乙基-3-丁烯基、4-甲基-1-戊烯基、4-甲基-2-戊烯基、4-甲基-3-戊烯基、4-甲基-4-戊烯基、1,1-二甲基-2-丁烯基、1,1-二甲基-3-丁烯基、1,2-二甲基-1-丁烯基、1,2-二甲基-2-丁烯基、1,2-二甲基-3-丁烯基、1-甲基-2-乙基-2-丙烯基、1-s-丁基乙烯基、1,3-二甲基-1-丁烯基、1,3-二甲基-2-丁烯基、1,3-二甲基-3-丁烯基、1-i-丁基乙烯基、2,2-二甲基-3-丁烯基、2,3-二甲基-1-丁烯基、2,3-二甲基-2-丁烯基、2,3-二甲基-3-丁烯基、2-i-丙基-2-丙烯基、3,3-二甲基-1-丁烯基、1-乙基-1-丁烯基、1-乙基-2-丁烯基、1-乙基-3-丁烯基、1-n-丙基-1-丙烯基、1-n-丙基-2-丙烯基、2-乙基-1-丁烯基、2-乙基-2-丁烯基、2-乙基-3-丁烯基、1,1,2-三甲基-2-丙烯基、1-t-丁基乙烯基、
1-甲基-1-乙基-2-丙烯基、1-乙基-2-甲基-1-丙烯基、1-乙基-2-甲基-2-丙烯基、1-i-丙基-1-丙烯基、1-i-丙基-2-丙烯基、1-甲基-2-環戊烯基、1-甲基-3-環戊烯基、2-甲基-1-環戊烯基、2-甲基-2-環戊烯基、2-甲基-3-環戊烯基、2-甲基-4-環戊烯基、2-甲基-5-環戊烯基、2-伸甲基-環戊基、3-甲基-1-環戊烯基、3-甲基-2-環戊烯基、3-甲基-3-環戊烯基、3-甲基-4-環戊烯基、3-甲基-5-環戊烯基、3-伸甲基-環戊基、1-環己烯基、2-環己烯基及3-環己烯基等。
上述碳數6至40之芳基如,苯基、o-甲基苯基、m-甲基苯基、p-甲基苯基、o-氯苯基、m-氯苯基、p-氯苯基、o-氟苯基、p-氟苯基、o-甲氧基苯基、p-甲氧基苯基、p-硝基苯基、p-氰基苯基、α-萘基、β-萘基、o-聯苯基、m-聯苯基、p-聯苯基、1-蒽基、2-蒽基、9-蒽基、1-菲基、2-菲基、3-菲基、4-菲基及9-菲基等。
含有醚鍵之有機基可以R11-O-R11(R11各自獨立表示甲基、乙基等之碳數1至6之烷基、伸烷基、或苯基、伸苯基)表示,例如含有含有甲氧基、乙氧基、苯氧基之醚鍵的有機基。
含有酮鍵之有機基可以R21-C(=O)-R21(R21各自獨立表示甲基、乙基等之碳數1至6之烷基、伸烷基、或苯基、伸苯基)表示,例如含有含有乙醯氧基、苯醯基之酮鍵的有機基。
含有酯鍵之有機基可以R31-C(=O)O-R31(R31各自獨立表示甲基、乙基等之碳數1至6之烷基、伸烷基、或苯
基、伸苯基)表示,例如含有甲基酯、乙基酯、苯基酯等之酯鍵的有機基。
上述鹵原子如,氟原子、氯原子、溴原子、碘原子。
式(1)所表示之交聯觸媒中成為陰離子部位之磺酸化合物如,p-苯酚磺酸、o-甲酚-4-磺酸、p-甲酚-2-磺酸、2-氯-p-苯酚磺酸、2-氰基-p-苯酚磺酸、5-磺基水楊酸、1,2-二羥基苯-4-磺酸、1,2-二羥基苯-4,5-二磺酸、2-甲氧基-p-苯酚磺酸、2-甲氧基羰基-p-苯酚磺酸、1-甲氧基苯-4-磺酸、1-萘酚-4-磺酸、1-萘酚-5-磺酸、2-萘酚-6-磺酸、2-萘酚-7-磺酸、2,3-二羥基萘-6-磺酸、2-羥基萘-3,6-二磺酸、2,7-二羥基萘-3,6-二磺酸、2-羥基蒽-7-磺酸等,較佳為p-萘酚磺酸、o-甲酚-4-磺酸、5-磺基水楊酸。
又,式(1)所表示之交聯觸媒中陽離子部位X+為NH4 +、1級銨離子、2級銨離子、3級銨離子、4級銨離子、鋶離子、或碘鎓陽離子。較佳為1級銨離子、2級銨離子、3級銨離子、及4級銨離子,特佳為2級銨離子及3級銨離子。
1級銨離子如,由甲基銨、乙基銨、n-丙基銨、n-丁基銨、苯胺、二甲基苯胺等所衍生之1級銨離子。
2級銨離子如,由二甲基胺、二乙基胺、n-二丙基胺、二異丙基胺、n-二丁基胺、吡咯啶、哌啶、嗎啉、3,5-二甲基嗎啉、2,6-二甲基哌啶、甲基胺基乙醇等
所衍生之2級銨離子。
3級銨離子如,由三甲基胺、三乙基胺、n-三丙基胺、二異丙基乙基胺、n-三丁基胺、1-甲基吡咯啶、1-甲基哌啶、1-乙基哌啶、4-甲基嗎啉、4-乙基嗎啉、二甲基胺基乙醇、二乙基胺基乙醇、甲基二乙醇胺、乙基二乙醇胺、吡啶、4-甲基吡啶、2,6-二甲基吡啶、2,4,6-三甲基吡啶、喹啉等所衍生之3級銨離子。
4級銨離子如,四甲基銨、四乙基銨、四-n-丙基銨、四-n-丁基銨、苄基四甲基銨、苄基四乙基銨等之4級銨離子。
鋶離子如,三甲基鋶、三乙基鋶、苯基二甲基鋶、二苯基甲基鋶、三苯基鋶等之鋶離子。
碘鎓陽離子如,二苯基碘鎓、雙(4-tert-丁基苯基)碘鎓等之碘鎓陽離子。
較佳如,由吡啶、4-甲基吡啶n-三丙基胺、嗎啉、4-甲基嗎啉所衍生之陽離子。
式(1)所表示之交聯觸媒如下述式(2-1)至(2-27)。
本發明中促進上述交聯反應用之觸媒中除了式(1)之交聯觸媒外,可組合添加p-甲苯磺酸、三氟甲烷磺酸、吡啶鎓p-甲苯磺酸、水楊酸、5-磺基水楊酸、4-苯基磺酸、莰磺酸、4-氯苯磺酸、苯二磺酸、1-萘磺酸、檸檬酸、苯甲酸、羥基苯甲酸、萘羧酸等之酸性化合物及或2,4,4,6-四溴環己二烯酮、苯偶因甲苯磺酸鹽、2-硝基苄基甲苯磺酸鹽、其他有機磺酸烷基酯等之熱酸產生劑、或雙(4-t-丁基苯基)碘鎓三氟甲烷磺酸鹽、三苯基鋶三氟甲烷磺酸鹽等之鎓鹽系光酸產生劑類、苯基-雙(三氯甲基)-s-三嗪等之含有鹵素之化合物系光酸產生劑類、苯
偶因甲苯磺酸鹽、N-羥基琥珀醯亞胺三氟甲烷磺酸鹽等之磺酸系光酸產生劑類等。交聯觸媒量相對於全固體成分為0.0001至20質量%,較佳為0.0005至10質量%,更佳為0.01至3質量%。
本發明之光阻下層膜形成組成物所含有之聚合物樹脂如,酚醛清漆樹脂、聚酯樹脂、聚醯亞胺樹脂、丙烯酸樹脂等之任一種,或為該組合所形成之聚合物樹脂。
本發明之光阻下層膜形成組成物為可含有交聯劑成分。該交聯劑如,三聚氰胺系、取代尿素系、或該等之聚合物系等。較佳為具有至少2個交聯形成取代基之交聯劑,例如甲氧基甲基化甘脲、丁氧基甲基化甘脲、甲氧基甲基化三聚氰胺、丁氧基甲基化三聚氰胺、甲氧基甲基化苯胍胺、丁氧基甲基化苯胍胺、甲氧基甲基化尿素、丁氧基甲基化尿素、甲氧基甲基化硫尿素、或甲氧基甲基化硫尿素等之化合物。又,可使用該等化合物之縮合物。
又,上述交聯劑可使用高耐熱性之交聯劑。高耐熱性之交聯劑較佳為使用分子內具有芳香族環(例如苯環、萘環)之含有交聯形成取代基的化合物。
該化合物如,具有下述式(3)之部分構造的化合物,或具有下述式(4)之重覆單位的聚合物或低聚物。
上述式(3)、式(4)中R2、R3、R4及R5為氫原子或碳數1至10之烷基,該等烷基可使用上述例示。又,上述式(3)、式(4)中n1表示1至5之整數,n2表示1至5之整數,(n1+n2)表示2至6之整數,n3表示1至3之整數,n4表示1至3之整數,(n3+n4)表示2至4之整數。
式(3)及式(4)之化合物、聚合物、低聚合物如下述。
上述化合物可由旭有機材工業(股)、本州
化學工業(股)之製品取得。例如上述交聯劑中式(5-24)之化合物可由旭有機材工業(股)商品名TM-BIP-A取得。
交聯劑之添加量會因所使用之塗佈溶劑,所使用之底層基板、所要求之溶液黏度,所要求之膜形狀等而變動,但相對於全固體成分為0.001至80質量%,較佳為0.01至50質量%,更佳為0.05至40質量%。該等交聯劑也可藉由自己縮合而發生交聯反應,但本發明之上述聚合物中存在交聯性取代基時,可與該等交聯性取代基發生交聯反應。
本發明之平版印刷用光阻下層膜材料中,除了上述以外必要時可另添加吸光劑、液流調整劑、接著補助劑、表面活性劑等。
又,吸光劑如「工業用色素之技術與市場」(CMC出版)及「染料便覽」(有機合成化學協會編)所記載之市售的吸光劑,例如適用C.I.DisperseYellow 1,3,4,5,7,8,13,23,31,49,50,51,54,60,64,66,68,79,82,88,90,93,102,114及124;C.I.D isperseOrange 1,5,13,25,29,30,31,44,57,72及73;C.I.DisperseRed 1,5,7,13,17,19,43,50,54,58,65,72,73,88,117,137,143,199及210;C.I.DisperseViolet 43;C.I.DisperseBlue 96;C.I.Fluorescent Brightening Agent 112,135及163;C.I.SolventOrange 2及45;C.I.SolventRed1,3,8,23,24,25,27及49;C.I.PigmentGreen 10;C.I.PigmentBrown 2
等。上述吸光劑一般相對於平版印刷用光阻下層膜材料之全固體成分的添加比例為10質量%以下,較佳為5質量%以下。
液流調整劑之添加目的主要為,提升光阻下層膜形成組成物之流動性,特別是烘烤步驟中提高光阻下層膜之膜厚均勻性、對於孔內部之光阻下層膜形成組成物的填充性。具體例如,二甲基酞酸酯、二乙基酞酸酯、二異丁基酞酸酯、三己基酞酸酯、丁基異癸基酞酸酯等之酞酸衍生物、二正丁基己二酸酯、二異丁基己二酸酯、二異辛基己二酸酯、辛基癸基己二酸酯等之己二酸衍生物、二正丁基馬來酸酯、二乙基馬來酸酯、二壬基馬來酸酯等之馬來酸衍生物、甲基油酸酯、丁基油酸酯、四氫糠基油酸酯等之油酸衍生物,或正丁基硬脂酸酯、縮水甘油基硬脂酸酯等之硬脂酸衍生物。該等液流調整劑相對於平版印刷用光阻下層膜材料之全固體成分的添加比例一般為未達30質量%。
接著補助劑之添加目的主要為,提升基板或光阻與光阻下層膜形成組成物之密合性,特別是顯像時不會使光阻剝離。具體例如,三甲基氯矽烷、二甲基乙烯基氯矽烷、甲基二苯基氯矽烷、氯甲基二甲基氯矽烷等之氯矽烷類、三甲基甲氧基矽烷、二甲基二乙氧基矽烷、甲基二甲氧基矽烷、二甲基乙烯基乙氧基矽烷、二苯基二甲氧基矽烷、苯基三乙氧基矽烷等之烷氧基矽烷類、六甲基二矽氮烷、N,N’-雙(三甲基矽烷基)脲、二甲基三甲基矽
烷基胺、三甲基矽烷基咪唑等之矽氮烷類、乙烯基三氯矽烷、γ-氯丙基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、γ-環氧丙氧基丙基三甲氧基矽烷等之矽烷類、苯并三唑、苯并咪唑、吲唑、咪唑、2-巰基苯并咪唑、2-巰基苯并噻唑、2-巰基苯并噁唑、尿唑、硫尿唑、巰基咪唑、巰基嘧啶等之雜環式化合物,或1,1-二甲基脲、1,3-二甲基脲等之尿素,或硫尿素化合物。該等接著補助劑相對於平版印刷用光阻下層膜材料之全固體成分的添加比例一般為未達5質量%,較佳為未達2質量%。
本發明之平版印刷用光阻下層膜材料中,為了不發生針孔或條紋等,及進一步提升相對於表面斑點之塗佈性,可添加表面活性劑。表面活性劑如,聚環氧乙烷月桂醚、聚環氧乙烷硬脂醚、聚環氧乙烷十六烷醚、聚環氧乙烷油醚等之聚環氧乙烷烷基醚類、聚環氧乙烷辛基苯酚醚、聚環氧乙烷壬基苯酚醚等之聚環氧乙烷烷基芳基醚類、聚環氧乙烷-聚環氧丙烷嵌段共聚物類、山梨糖醇酐單月桂酸酯、山梨糖醇酐單棕櫚酸酯、山梨糖醇酐單硬脂酸酯、山梨糖醇酐單油酸酯、山梨糖醇酐三油酸酯、山梨糖醇酐三硬脂酸酯等之山梨糖醇酐脂肪酸酯類、聚環氧乙烷山梨糖醇酐單月桂酸酯、聚環氧乙烷山梨糖醇酐單棕櫚酸酯、聚環氧乙烷山梨糖醇酐單硬脂酸酯、聚環氧乙烷山梨糖醇酐三油酸酯、聚環氧乙烷山梨糖醇酐三硬脂酸酯等之聚環氧乙烷山梨糖醇酐脂肪酸酯類等之非離子系表面活性劑,或耶佛特(EFTOP)EF301、EF303、EF352(現三
菱材料電子化成)(特肯姆(股)製商品名)、美佳凡(MEGAFAC)F171、F173、R-30(大日本油墨(股)製商品名)、佛洛拉(Fluorad)FC430、FC431(住友3M(股)製商品名)、艾隆西(Asahiguard)AG710、薩佛隆(Surflon)S-382、SC101、SC102、SC103、SC104、SC105、SC106(旭硝子(股)製商品名)等之氟系表面活性劑,或有機矽氧烷聚合物KP341(信越化學工業(股)製)等。該等表面活性劑相對於本發明之平版印刷用光阻下層膜材料之全固體成分的添加量一般為2.0質量%以下,較佳為1.0質量%以下。該等表面活性劑可單獨添加,或2種以上組合添加。
本發明中溶解上述聚合物、交聯劑成分、交聯觸媒等用之溶劑可使用乙二醇單甲基醚、乙二醇單乙基醚、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯、二乙二醇單甲基醚、二乙二醇單乙基醚、丙二醇、丙二醇單甲基醚、丙二醇單甲基醚乙酸酯、丙二醇單乙基醚、丙二醇單乙基醚乙酸酯、丙二醇丙基醚乙酸酯、甲苯、二甲苯、甲基乙基酮、環戊酮、環己酮、2-羥基丙酸乙酯、2-羥基-2-甲基丙酸乙酯、乙氧基乙酸乙酯、羥基乙酸乙酯、2-羥基-3-甲基丁酸甲酯、3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸乙酯、3-乙氧基丙酸甲酯、丙酮酸甲酯、丙酮酸乙酯、乙酸乙酯、乙酸丁酯、乳酸乙酯、乳酸丁酯等。該等有機溶劑可單獨或2種以上組合使用。
另外可混合使用丙二醇單丁基醚、丙二醇單
丁基醚乙酸酯等之高沸點溶劑。該等溶劑中又以丙二醇單甲基醚、丙二醇單甲基醚乙酸酯、乳酸乙酯、乳酸丁酯及環己酮等相對於提升塗平性較佳。
本發明所使用之光阻係指光阻劑或電子線光阻。
本發明中塗佈於平版印刷用光阻下層膜上方之光阻劑可使用負型或正型中任一種,例如由酚醛清漆樹脂與1,2-萘醌二疊氮基磺酸酯所形成之正型光阻劑、由具有藉由酸分解而提升鹼溶解速度之基的黏合劑與光酸產生劑所形成之化學加強型光阻劑、由鹼可溶性黏合劑與藉由酸分解而提升光阻劑之鹼溶解速度的低分子化合物與光酸產生劑所形成之化學加強型光阻劑,由具有藉由酸分解而提升鹼溶解速度之基的黏合劑與藉由酸分解而提升光阻劑之鹼溶解速度的低分子化合物與光酸產生劑所形成之化學加強型光阻劑、骨架具有Si原子之光阻劑等,例如羅門哈斯公司製商品名APEX-E。
又本發明中塗佈於平版印刷用光阻下層膜上方之電子線光阻如,由主鏈含有Si-Si鏈且末端含有芳香族環之樹脂與藉由照射電子線而產生酸之酸產生劑所形成的組成物,或由被羥基含有N-羧基胺之有機基所取代的聚(p-羥基苯乙烯)與藉由照射電子線而產生酸之酸產生劑所形成的組成物等。後者之電子線光阻組成物中,藉由照射電子線而由酸產生劑所產生之酸會與聚合物支鏈之N-羧基胺氧基反應,使聚合物支鏈被羥基分解而具有鹼可
溶性而溶解於鹼顯像液中,形成光阻圖型之物。該藉由照射電子線而產生酸之酸產生劑如1,1-雙[p-氯苯基]-2,2,2-三氯乙烷、1,1-雙[p-甲氧基苯基]-2,2,2-三氯乙烷、1,1-雙[p-氯苯基]-2,2-二氯乙烷、2-氯-6-(三氯甲基)吡啶等之鹵化有機化合物、三苯基鋶鹽、二苯基碘鎓鹽等之鎓鹽、硝基苄基甲苯磺酸酯、二硝基苄基甲苯磺酸酯等之磺酸酯。
具有使用本發明之平版印刷用光阻下層膜材料所形成的光阻下層膜之光阻的顯像液可使用氫氧化鈉、氫氧化鉀、碳酸鈉、矽酸鈉、偏矽酸鈉、氨水等之無機鹼類、乙基胺、n-丙基胺等之伯胺類、二乙基胺、二-n-丁基胺等之仲胺類、三乙基胺、甲基二乙基胺等之叔胺類、二甲基乙醇胺、三乙醇胺等之醇胺類、四甲基銨羥化物、四乙基銨羥化物、膽鹼等之4級銨鹽、吡咯、哌啶等之環狀胺類等之鹼類的水溶液。另外上述鹼類之水溶液可適當添加異丙基醇等之醇類、非離子系等之表面活性劑再使用。其中較佳之顯像液為4級銨鹽,更佳為四甲基銨羥化物及膽鹼。
又,本發明中顯像液可使用有機溶劑。曝光後可藉由顯像液(溶劑)進行顯像。藉此,例如使用正型光阻劑時可去除未曝光部分之光阻劑,形成光阻劑之圖型。
顯像液如,乙酸甲酯、乙酸丁酯、乙酸乙酯、乙酸異丙酯、乙酸戊酯、乙酸異戊酯、甲氧基乙酸乙
酯、乙氧基乙酸乙酯、丙二醇單甲基醚乙酸酯、乙二醇單乙基醚乙酸酯、乙二醇單丙基醚乙酸酯、乙二醇單丁基醚乙酸酯、乙二醇單苯基醚乙酸酯、二乙二醇單甲基醚乙酸酯、二乙二醇單丙基醚乙酸酯、二乙二醇單乙基醚乙酸酯、二乙二醇單苯基醚乙酸酯、二乙二醇單丁基醚乙酸酯、二乙二醇單乙基醚乙酸酯、2-甲氧基丁基乙酸酯、3-甲氧基丁基乙酸酯、4-甲氧基丁基乙酸酯、3-甲基-3-甲氧基丁基乙酸酯、3-乙基-3-甲氧基丁基乙酸酯、丙二醇單甲基醚乙酸酯、丙二醇單乙基醚乙酸酯、丙二醇單丙基醚乙酸酯、2-乙氧基丁基乙酸酯、4-乙氧基丁基乙酸酯、4-丙氧基丁基乙酸酯、2-甲氧基戊基乙酸酯、3-甲氧基戊基乙酸酯、4-甲氧基戊基乙酸酯、2-甲基-3-甲氧基戊基乙酸酯、3-甲基-3-甲氧基戊基乙酸酯、3-甲基-4-甲氧基戊基乙酸酯、4-甲基-4-甲氧基戊基乙酸酯、丙二醇二乙酸酯、甲酸甲酯、甲酸乙酯、甲酸丁酯、甲酸丙酯、乳酸乙酯、乳酸丁酯、乳酸丙酯、碳酸乙酯、碳酸丙酯、碳酸丁酯、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙酯、丙酮酸丁酯、乙醯乙酸甲酯、乙醯乙酸乙酯、丙酸甲酯、丙酸乙酯、丙酸丙酯、丙酸異丙酯、2-羥基丙酸甲酯、2-羥基丙酸乙酯、甲基-3-甲氧基丙酸酯、乙基-3-甲氧基丙酸酯、乙基-3-乙氧基丙酸酯、丙基-3-甲氧基丙酸酯等。另外該等顯像液可添加表面活性劑等。顯像之條件可適當由溫度5至50℃、時間10至600秒中選擇。
其次將說明本發明之光阻圖型形成法,藉由
旋轉塗佈機、塗料器等之適當塗佈方法將光阻下層膜形成組成物塗佈於製造精密積體電路元件用之基板(例如被覆矽/二氧化矽之玻璃基板、ITO基板等之透明基板)後,烘烤進行硬化而得塗佈型下層膜。此時之光阻下層膜的膜厚較佳為0.01至3.0μm。又塗佈後烘烤之條件為80至350℃下0.5至120分鐘。其後於光阻下層膜上直接,或必要時於塗佈型下層膜上使1層至數層之塗膜材料成膜後,塗佈光阻,再通過一定之遮罩照射光或電子線,其次藉由顯像、漂洗、乾燥可得良好之光阻圖型。必要時可進行照射光或電子線後之加熱(PEB:Post Exposure Bake)。其後藉由乾蝕去除藉由前述步驟顯像去除光阻部分之光阻下層膜,可於基板上形成所希望之圖型。
上述光阻劑之曝光光線為近紫外線、遠紫外線,或極端紫外線(例如EUV,波長13.5nm)等之化學線,例如使用248nm(KrF雷射光)、193nm(ArF雷射光)、157nm(F2雷射光)等之波長的光線。照射光時可使用能由光酸產生劑產生酸之方法,無特別限制,曝光量為1至2000mJ/cm2,或10至1500mJ/cm2,或50至1000mJ/cm2。
又電子線光阻之電子線照射,例如可使用電子線照射裝置進行照射。
本發明可經由,使用光阻下層膜形成組成物於半導體基板上形成該光阻下層膜之步驟,於其上方形成光阻膜之步驟,藉由照射光或電子線與顯像而形成光阻圖
型之步驟,藉由光阻圖型蝕刻該光阻下層膜之步驟,及藉由圖型化之光阻下層膜加工半導體基板之步驟,而製造半導體裝置。
將丙二醇單甲基醚9.04g加入p-苯酚磺酸(東京化成工業(股)製)2.26g中溶解後,冰冷下加入吡啶1.03g。將其加入2-丁酮50.00g中,靜置於室溫下。過濾所析出之結晶後減壓乾燥,得白色結晶狀之式(2-1)所表示之交聯觸媒(2.12g)。又,由1H-NMR之積分比所算出的p-苯酚磺酸與吡啶之組成比例為1:0.95。
將丙二醇單甲基醚8.28g加入p-苯酚磺酸(東京化成工業(股)製)2.07g中溶解後,冰冷下加入4-甲基吡啶1.10g。將其加入乙酸乙酯50.00g中,靜置於室溫下。過濾析出物後減壓乾燥,得淡橙色結晶狀之式(2-17)所表示之交聯觸媒(2.32g)。又,由1H-NMR之積分比所算出的p-苯酚磺酸與4-甲基吡啶之組成比例為1:0.98。
將丙二醇單甲基醚8.16g加入5-磺基水楊酸(東京化
成工業(股)製)2.04g中溶解後,冰冷下加入4-甲基吡啶0.87g。將其加入2-丁酮50.00g中,靜置於室溫下。過濾析出物後減壓乾燥,得白色結晶狀之式(2-22)所表示之交聯觸媒(2.13g)。又,由1H-NMR之積分比所算出的5-磺基水楊酸與4-甲基吡啶之組成比例為1:0.99。
將2-丁酮20.00g加入5-磺基水楊酸(東京化成工業(股)製)2.03g中溶解後,冰冷下加入n-三丙基胺1.33g,靜置於室溫下。過濾析出物後減壓乾燥,得白色粉末狀之式(2-23)所表示之交聯觸媒(2.00g)。又,由1H-NMR之積分比所算出的5-磺基水楊酸與n-三丙基胺之組成比例為1:0.99。
將2-丁酮20.00g加入5-磺基水楊酸(東京化成工業(股)製)2.06g中溶解後,冰冷下加入1-乙基哌啶1.07g,靜置於室溫下。過濾析出物後減壓乾燥,得白色粉末狀之式(2-24)所表示之交聯觸媒(1.99g)。又,由1H-NMR之積分比所算出的5-磺基水楊酸與1-乙基哌啶之組成比例為1:0.99。
將2-丁酮20.00g加入5-磺基水楊酸(東京化成工業
(股)製)2.01g中溶解後,冰冷下加入嗎啉0.80g,靜置於室溫下。過濾析出物後減壓乾燥,得淡黃色粉末狀之式(2-25)所表示之交聯觸媒(2.25g)。又,由1H-NMR之積分比所算出的5-磺基水楊酸與嗎啉之組成比例為1:1.22。
將2-丁酮20.00g加入5-磺基水楊酸(東京化成工業(股)製)2.03g中溶解後,冰冷下加入4-甲基嗎啉0.94g或少量甲醇,靜置於室溫下。過濾析出物後減壓乾燥,得淡黃色粉末狀之式(2-26)所表示之交聯觸媒(1.72g)。又,由1H-NMR之積分比所算出的5-磺基水楊酸與4-甲基嗎啉之組成比例為1:1.00。
冰冷下將吡啶8.83g加入o-甲酚-4-磺酸溶液(關東化學工業(股)製)20.00g中。將2-丁酮130.00g加入其中後,靜置於室溫下。過濾析出物後減壓乾燥,得白色結晶狀之式(2-27)所表示之交聯觸媒(16.24g)。又,由1H-NMR之積分比所算出的o-甲酚-4-磺酸與吡啶之組成比例為1:1.05。
將下述式(6-1)所表示之光阻下層膜形成組成物用之酚
醛清漆樹脂1.02g、交聯劑用之3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-BP,本州化學工業(股)製)0.20g、合成例1所得之交聯觸媒0.03g溶解於丙二醇單甲基醚4.75g、丙二醇單甲基醚乙酸酯14.25g、環己酮4.75g中,調製平版印刷用光阻下層膜形成組成物之溶液。
將前述式(6-1)所表示之光阻下層膜形成組成物用之酚醛清漆樹脂1.02g、交聯劑用之3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-BP,本州化學工業(股)製)0.20g、合成例2所得之交聯觸媒0.03g溶解於丙二醇單甲基醚4.75g、丙二醇單甲基醚乙酸酯14.25g、環己酮4.75g中,調製平版印刷用光阻下層膜形成組成物之溶液。
將前述式(6-1)所表示之光阻下層膜形成組成物用酚醛清漆樹脂1.02g、交聯劑用3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-BP,本州化學工業(股)製)0.20g、合成例3所得之交聯觸媒0.03g溶解於丙二醇單甲基醚4.75g、丙二醇單甲基醚乙酸酯14.25g、環己酮4.75g中,調製平版印刷用光阻下層膜形成組成物之溶液。
將前述式(6-1)所表示之光阻下層膜形成組成物用酚醛清漆樹脂1.02g、交聯劑用3,3’,5,5’-四甲氧基甲基-4,4’-聯苯(商品名:TMOM-BP,本州化學工業(股)製)0.20g、合成例4所得之交聯觸媒0.03g加入丙二醇單甲基醚4.75g、丙二醇單甲基醚乙酸酯14.25g、環己酮4.75g中,調製平版印刷用光阻下層膜形成組成物之溶液。
將前述式(6-1)所表示之光阻下層膜形成組成物用酚醛清漆樹脂1.02g、交聯劑用3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-BP,本州化學工業(股)製)0.20g、合成例5所得之交聯觸媒0.03g溶解於丙二醇單甲基醚4.75g、丙二醇單甲基醚乙酸酯14.25g、環己酮
4.75g中,調製平版印刷用光阻下層膜形成組成物之溶液。
將前述式(6-1)所表示之光阻下層膜形成組成物用酚醛清漆樹脂1.02g、交聯劑用3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-BP,本州化學工業(股)製)0.20g、合成例6所得之交聯觸媒0.03g溶解於丙二醇單甲基醚4.75g、丙二醇單甲基醚乙酸酯14.25g、環己酮4.75g中,調製平版印刷用光阻下層膜形成組成物之溶液。
將前述式(6-1)所表示之光阻下層膜形成組成物用酚醛清漆樹脂1.02g、交聯劑用3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-BP,本州化學工業(股)製)0.20g、合成例7所得之交聯觸媒0.03g溶解於丙二醇單甲基醚4.75g、丙二醇單甲基醚乙酸酯14.25g、環己酮4.75g中,調製平版印刷用光阻下層膜形成組成物之溶液。
將前述式(6-1)所表示之光阻下層膜形成組成物用酚醛清漆樹脂1.02g、交聯劑用3,3’,5,5’-四甲氧基甲基-
4,4’-雙酚(商品名:TMOM-BP,本州化學工業(股)製)0.20g、合成例8所得之交聯觸媒0.03g溶解於丙二醇單甲基醚4.75g、丙二醇單甲基醚乙酸酯14.25g、環己酮4.75g中,調製平版印刷用光阻下層膜形成組成物之溶液。
將前述式(6-1)所表示之光阻下層膜形成組成物用酚醛清漆樹脂1.25g、合成例1所得之交聯觸媒0.04g溶解於丙二醇單甲基醚4.75g、丙二醇單甲基醚乙酸酯14.25g、環己酮4.75g中,調製平版印刷用光阻下層膜形成組成物之溶液。又,本實施例之光阻下層膜形成組成物不含交聯劑。
將下述式(6-2)所表示之光阻下層膜形成組成物用酚醛清漆樹脂1.02g、交聯劑用3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-BP,本州化學工業(股)製)0.20g、合成例1所得之交聯觸媒0.03g溶解於丙二醇單甲基醚2.38g、丙二醇單甲基醚乙酸酯7.13g、環己酮14.25g中,調製平版印刷用光阻下層膜形成組成物之溶液。
將下述式(6-3)所表示之光阻下層膜形成組成物用之聚醯亞胺樹脂0.98g、交聯劑用四甲氧基甲基甘脲(商品名:POWDERLINK[登記商標]1174,日本氰特工業(股)製)0.25g、合成例1所得之交聯觸媒0.02g溶解於丙二醇單甲基醚16.63g、丙二醇單甲基醚乙酸酯7.13g中,調製平版印刷用光阻下層膜形成組成物之溶液。
將下述式(6-4)所表示之光阻下層膜形成組成物用聚酯樹脂0.98g、交聯劑用四甲氧基甲基甘脲(商品名:POWDERLINK[登記商標]1174,日本氰特工業(股)製)0.25g、合成例1所得之交聯觸媒0.02g溶解於丙二醇單甲基醚16.63g、丙二醇單乙基醚7.13g中,調製平版印刷用光阻下層膜形成組成物之溶液。
將下述式(6-5)所表示之光阻下層膜形成組成物用丙烯酸樹脂0.98g、交聯劑用四甲氧基甲基甘脲(商品名:POWDERLINK[登記商標]1174,日本氰特工業(股)製)0.25g、合成例1所得之交聯觸媒0.02g溶解於丙二醇單甲基醚21.38g、丙二醇單甲基醚乙酸酯2.38g中,調製平版印刷用光阻下層膜形成組成物之溶液。
將前述式(6-1)所表示之光阻下層膜形成組成物用酚醛清漆樹脂1.02g、交聯劑用3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-BP,本州化學工業(股)製)0.20g、交聯觸媒用之式(7-1)所表示之吡啶鎓-p-甲苯磺酸鹽(東京化成工業(股)製)0.03g溶解於丙二醇單甲基醚4.75g、丙二醇單甲基醚乙酸酯14.25g、環己酮4.75g中,調製平版印刷用光阻下層膜形成組成物之溶液。
將前述式(6-1)所表示之光阻下層膜形成組成物用之酚醛清漆樹脂1.25g、交聯觸媒用之前述式(7-1)所表
示之吡啶鎓-p-甲苯磺酸鹽(東京化成工業(股)製)0.04g溶解於丙二醇單甲基醚4.75g、丙二醇單甲基醚乙酸酯14.25g、環己酮4.75g中,調製平版印刷用光阻下層膜形成組成物之溶液。又,本實施例之光阻下層膜形成組成物不含交聯劑。
將前述式(6-2)所表示之光阻下層膜形成組成物用之酚醛清漆樹脂1.02g、交聯劑用之3,3’,5,5’-四甲氧基甲基-4,4’-雙酚(商品名:TMOM-BP,本州化學工業(股)製)0.20g、交聯觸媒用之前述式(7-1)所表示之吡啶鎓-p-甲苯磺酸鹽(東京化成工業(股)製)0.03g溶解於丙二醇單甲基醚2.38g、丙二醇單甲基醚乙酸酯7.13g、環己酮14.25g中,調製平版印刷用光阻下層膜形成組成物之溶液。
將前述式(6-3)所表示之光阻下層膜形成組成物用之聚醯亞胺樹脂0.98g、交聯劑用之四甲氧基甲基甘脲(商品名:POWDERLINK[登記商標]1174,日本氰特工業(股)製)0.25g、交聯觸媒用之前述式(7-1)所表示之吡啶鎓-p-甲苯磺酸鹽(東京化成工業(股)製)0.02g溶解於丙二醇單甲基醚16.63g、丙二醇單甲基醚乙酸酯7.13g中,調製平版印刷用光阻下層膜形成組成物之溶
液。
將前述式(6-4)所表示之光阻下層膜形成組成物用之聚酯樹脂0.98g、交聯劑用之四甲氧基甲基甘脲(商品名:POWDERLINK[登記商標]1174,日本氰特工業(股)製)0.25g、交聯觸媒用之前述式(7-1)所表示之吡啶鎓-p-甲苯磺酸鹽(東京化成工業(股)製)0.02g溶解於丙二醇單甲基醚16.63g、丙二醇單乙基醚7.13g中,調製平版印刷用光阻下層膜形成組成物之溶液。
將前述式(6-5)所表示之光阻下層膜形成組成物用之丙烯酸樹脂0.98g、交聯劑用之四甲氧基甲基甘脲(商品名:POWDERLINK[登記商標]1174,日本氰特工業(股)製)0.25g、交聯觸媒用之前述式(7-1)所表示之吡啶鎓-p-甲苯磺酸鹽(東京化成工業(股)製)0.02g溶解於丙二醇單甲基醚21.38g、丙二醇單甲基醚乙酸酯2.38g中,調製平版印刷用光阻下層膜形成組成物之溶液。
將前述式(6-1)所表示之光阻下層膜形成組成物用酚醛清漆樹脂1.02g、交聯劑用3,3’,5,5’-四甲氧基甲基-
4,4’-雙酚(商品名:TMOM-BP,本州化學工業(股)製)0.20g、交聯觸媒用之式(7-2)所表示之p-苯酚磺酸水合物(東京化成工業(股)製)0.03g溶解於丙二醇單甲基醚4.75g、丙二醇單甲基醚乙酸酯14.25g、環己酮4.75g中,調製平版印刷用光阻下層膜形成組成物之溶液。
測定昇華物量係使用國際公開第2007/111147號報告所記載之昇華物量測定裝置實施。首先使用旋轉塗佈機將實施例1至實施例13、比較例1至比較例6所調製之光阻下層膜形成組成物,以使膜厚為100nm之方式塗佈於直徑4英寸之矽晶圓基板上。使塗佈有光阻下層膜之晶圓與熱板一體化後安裝於前述昇華物量測定裝置,烘烤120秒後,以QCM(Quartz Crystal Microbalance)傳感器,即形成電極後之水晶振動子捕集昇華物。QCM傳感器可利用水晶振動子之表面(電極)上附著昇華物時會因應其質量而改變水晶振動子之周波數(降低)的性質,測定微量之質量變化。
詳細之測定步驟如下所述。將昇華物量測定裝置之熱板升溫為表1至表6所記載之測定溫度,且將泵浦流量設定為1m3/s,又,最初之60秒間係放置使裝置安定化。其後由滑動口快速將被覆光阻下層膜之晶圓載置於熱板上,由60秒起至180秒之間(120秒間)進行昇華物捕集。又,所使用的由前述昇華物量測定裝置之QCM傳感器與捕集漏斗部分之接連處所形成的液流配件(檢驗部分)未設置噴嘴,因此可於與傳感器(水晶振動子)之距離為30mm之空間單元的流路(口徑:32mm)不會發生氣流絞動下而流入。又,QCM傳感器中,電極係使用主要成分為矽與鋁之材料(AlSi),水晶振動子之直徑(傳感器直徑)為14mm,水晶振動子表面之電極直徑為5mm,共振周波數為9MHz。
將所得之周波數變化由測定用之水晶振動子的固有值換算為公克後,可確認塗佈有光阻下層膜之1片晶圓的昇華物量與時間經過之關係。又,最初60秒間為裝置安定化用之放置(未安裝晶圓)時間帶,將晶圓載置於熱板後60秒起至180秒為止的測定值係為有關晶圓之昇華物量的測定值。以該裝置定量之光阻下層膜的昇華物量作為昇華物量比,如表1至表6所示。又,昇華物量比係以由比較例1至比較例6之光阻下層膜所發生的昇華物量為1而規格化之值表示。
由表1得知,由實施例1至實施例8之光阻下層膜形成組成物所發生之昇華物量比為,少於由比較例1之光阻下層膜形成組成物所發生之昇華物量比。即,實施例1至實施例8適用之交聯觸媒可有效抑制昇華物發生量。又,由表2得知,實施例9之昇華物量比為,少於比較例2之光阻下層膜形成組成物。即,既使不含交聯劑,實施例9適用之交聯觸媒也可有效減少昇華物量。另外由表3至表6得知,實施例10至實施例13之昇華物量比各
自少於由比較例3至比較例6之光阻下層膜形成組成物所發生者。即,實施例10至實施例13適用之交聯觸媒為,不拘於光阻下層膜形成組成物之聚合物樹脂種類,均可展現有效之昇華物減少效果。因此本發明該具有羥基之芳基磺酸鹽比未持有羥基之芳基磺酸鹽可更有效抑制由光阻下層膜所發生之昇華物量。
將實施例1及比較例7之光阻下層膜形成組成物使膜厚為100nm之方式塗佈於矽晶圓上,使用前述之昇華物量測定裝置測定以240℃焙燒60秒後由光阻下層膜所發生之昇華物量。此時所發生之昇華物量係以由前述比較例1之光阻下層膜所發生的昇華物量為1而規格化之值表示(SA)。其次以35℃下2周之條件對該光阻下層膜形成組成物進行保存試驗,再使用該裝置測定昇華物量,此時所發生之昇華物量係以由保存試驗前測定之前述比較例1的光阻下層膜所發生之昇華物量為1而規格化之值表示(SB)。藉由算出保存試驗前後之昇華物量比的增減率(SB/SA),由測定昇華物量評估光阻下層膜之老化(劣化)程度。即,保存試驗前後之昇華物量比的增減率(SB/SA)較大時,會因來自光阻下層膜之昇華物量的增加,而易使保存試驗發生老化。又,保存試驗前之昇華物量(SA)、保存試驗後之昇華物量(SB)及昇華物量之增減率(SB/SA)如表7所示。
由表7得知,實施例1之光阻下層膜形成組成物比較比較例7之光阻下層膜形成組成物時,保存試驗前所測定之昇華物量較多,於保存試驗後所測定之昇華物量較少。即,實施例1之光阻下層膜形成組成物相對於保存試驗前後之昇華物量的增減率較少。即,實施例1適用之交聯觸媒不易發生老化,可長期間抑制昇華物量。因此本發明之該具有羥基的芳基磺酸鹽比未形成鹽之具有羥基的芳基磺酸可抑制因老化而降低品質。
由此得知,本發明之光阻下層膜形成組成物可減少將光阻下層膜形成組成物焙燒形成下層膜時來自光阻下層膜形成組成物的昇華成分(昇華物)發生量,且可抑制光阻下層膜形成組成物老化(劣化),提高品質之保存安定性。
Claims (11)
- 一種光阻下層膜形成組成物,其為含有下述式(1):
- 如請求項1之光阻下層膜形成組成物,其中Ar為苯環。
- 如請求項1之光阻下層膜形成組成物,其中X+為銨離子。
- 如請求項1至3中任一項之光阻下層膜形成組成物,其中R1表示甲基或羧基。
- 如請求項1至4中任一項之光阻下層膜形成組成物,其中m1為0,m2及m3各自為1。
- 如請求項1至5中任一項之光阻下層膜形成組成物,其中另含有交聯劑。
- 一種光阻下層膜,其為藉由,將如請求項1至6中任一項之光阻下層膜形成組成物塗佈於半導體基板上培燒所得。
- 一種製造半導體用之光阻圖型的形成方法,其為包含,將如請求項1至6中任一項之光阻下層膜形成組成物塗佈於半導體基板上焙燒形成光阻下層膜之步驟。
- 一種半導體裝置之製造方法,其為包含,藉由如請求項1至6中任一項之光阻下層膜形成組成物於半導體基板上形成光阻下層膜之步驟,於其上方形成光阻膜之步驟,藉由照射光或電子線與顯像而形成光阻圖型之步驟,藉由所形成之光阻圖型蝕刻該光阻下層膜之步驟,及藉由圖型化之光阻下層膜加工半導體基板之步驟。
- 一種半導體裝置之製造方法,其為包含,藉由如請求項1至6中任一項之光阻下層膜形成組成物於半導體基板上形成光阻下層膜之步驟,於其上方形成硬遮罩之步驟,再於其上方形成光阻膜之步驟,藉由照射光或電子線 與顯像而形成光阻圖型之步驟,藉由所形成之光阻圖型蝕刻硬遮罩之步驟,藉由圖型化之硬遮罩蝕刻前述光阻下層膜之步驟,及藉由圖型化之光阻下層膜加工半導體基板之步驟。
- 如請求項10之製造方法,其中硬遮罩為藉由塗佈無機物或蒸鍍無機物而形成之物。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI660245B (zh) * | 2016-05-23 | 2019-05-21 | 南韓商羅門哈斯電子材料韓國公司 | 與外塗佈光致抗蝕劑一起使用的塗料組合物 |
TWI731406B (zh) * | 2018-09-06 | 2021-06-21 | 南韓商三星Sdi股份有限公司 | 抗蝕劑墊層組合物和使用所述組合物形成圖案的方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI601792B (zh) * | 2013-01-30 | 2017-10-11 | 湛新智財有限公司 | 單份低溫固化塗布組成物、其製備方法及其使用方法 |
TWI754619B (zh) * | 2015-09-30 | 2022-02-11 | 日商日產化學工業股份有限公司 | 樹脂薄膜形成用組成物 |
TWI615383B (zh) | 2015-10-31 | 2018-02-21 | 羅門哈斯電子材料有限公司 | 熱酸產生劑以及光阻劑圖案修整組合物及方法 |
TWI628159B (zh) * | 2015-10-31 | 2018-07-01 | 羅門哈斯電子材料有限公司 | 熱酸產生劑以及光阻劑圖案修整組合物及方法 |
US10429737B2 (en) * | 2017-09-21 | 2019-10-01 | Rohm And Haas Electronic Materials Korea Ltd. | Antireflective compositions with thermal acid generators |
CN113196452A (zh) * | 2019-01-18 | 2021-07-30 | 应用材料公司 | 用于电场引导的光刻胶图案化工艺的膜结构 |
WO2022065374A1 (ja) | 2020-09-28 | 2022-03-31 | 日産化学株式会社 | フルオロアルキル基を有する有機酸またはその塩を含むレジスト下層膜形成組成物 |
TW202405042A (zh) * | 2022-03-28 | 2024-02-01 | 日商日產化學股份有限公司 | 阻劑下層膜形成組成物 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007017162A2 (en) * | 2005-08-05 | 2007-02-15 | Kodak Graphic Communications Gmbh | Dual-layer heat- sensitive imageable elements with a polyvinyl acetal top layer |
JP2009047754A (ja) | 2007-08-14 | 2009-03-05 | Fujifilm Corp | 平版印刷版原版 |
KR100959190B1 (ko) * | 2007-12-21 | 2010-05-24 | 제일모직주식회사 | 현상액에 용해 가능한 근자외선 바닥 반사방지막 조성물 및이를 이용한 패턴화된 재료 형성 방법 |
US8323874B2 (en) * | 2008-01-22 | 2012-12-04 | Eastman Kodak Company | Method of making lithographic printing plates |
JP5141882B2 (ja) | 2008-01-24 | 2013-02-13 | 日産化学工業株式会社 | バリア性を示すレジスト下層膜の形成用組成物及びレジスト下層膜のバリア性評価方法 |
JP2009265262A (ja) * | 2008-04-23 | 2009-11-12 | Eastman Kodak Co | 平版印刷原版 |
KR20110086812A (ko) * | 2008-10-10 | 2011-08-01 | 닛산 가가쿠 고교 가부시키 가이샤 | 플루오렌을 함유하는 수지를 포함하는 리소그래피용 레지스트 하층막 형성 조성물 |
JP5382321B2 (ja) | 2009-03-31 | 2014-01-08 | 日産化学工業株式会社 | レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
CN102472973B (zh) * | 2009-08-19 | 2015-03-04 | 日产化学工业株式会社 | 含有带脂肪族环和芳香族环的树脂的光刻用抗蚀剂下层膜形成用组合物 |
JP5388908B2 (ja) * | 2010-03-08 | 2014-01-15 | 富士フイルム株式会社 | 赤外線レーザー用ポジ型平版印刷版原版、及び、平版印刷版の製版方法 |
EP2365389B1 (en) * | 2010-03-08 | 2013-01-16 | Fujifilm Corporation | Positive-working lithographic printing plate precursor for infrared laser and process for making lithographic printing plate |
KR20130108302A (ko) * | 2010-09-16 | 2013-10-02 | 후지필름 가부시키가이샤 | 패턴 형성 방법, 화학증폭형 레지스트 조성물, 및 레지스트 막 |
JP2014157169A (ja) | 2011-06-24 | 2014-08-28 | Nissan Chem Ind Ltd | ポリヒドロキシベンゼンノボラック樹脂を含むレジスト下層膜形成組成物 |
US20130157463A1 (en) * | 2011-12-14 | 2013-06-20 | Shin-Etsu Chemical Co., Ltd. | Near-infrared absorbing film composition for lithographic application |
US9260602B2 (en) * | 2012-10-11 | 2016-02-16 | Sabic Global Technologies B.V. | Antistatic flame retardant resin compositions and methods and uses thereof |
-
2014
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI660245B (zh) * | 2016-05-23 | 2019-05-21 | 南韓商羅門哈斯電子材料韓國公司 | 與外塗佈光致抗蝕劑一起使用的塗料組合物 |
US11448964B2 (en) | 2016-05-23 | 2022-09-20 | Rohm And Haas Electronic Materials Korea Ltd. | Coating compositions for use with an overcoated photoresist |
TWI731406B (zh) * | 2018-09-06 | 2021-06-21 | 南韓商三星Sdi股份有限公司 | 抗蝕劑墊層組合物和使用所述組合物形成圖案的方法 |
US11385545B2 (en) | 2018-09-06 | 2022-07-12 | Samsung Sdi Co., Ltd. | Resist underlayer composition, and method of forming patterns using the composition |
US11982943B2 (en) | 2018-09-06 | 2024-05-14 | Samsung Sdi Co., Ltd. | Method of forming patterns using resist underlayer composition |
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