WO2014129395A1 - 異方性導電接着剤、発光装置及び異方性導電接着剤の製造方法 - Google Patents

異方性導電接着剤、発光装置及び異方性導電接着剤の製造方法 Download PDF

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WO2014129395A1
WO2014129395A1 PCT/JP2014/053460 JP2014053460W WO2014129395A1 WO 2014129395 A1 WO2014129395 A1 WO 2014129395A1 JP 2014053460 W JP2014053460 W JP 2014053460W WO 2014129395 A1 WO2014129395 A1 WO 2014129395A1
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Prior art keywords
weight
conductive adhesive
light
anisotropic conductive
particles
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PCT/JP2014/053460
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English (en)
French (fr)
Inventor
秀次 波木
士行 蟹澤
英明 馬越
青木　正治
明 石神
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デクセリアルズ株式会社
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Application filed by デクセリアルズ株式会社 filed Critical デクセリアルズ株式会社
Priority to CN201480009458.1A priority Critical patent/CN105102567B/zh
Priority to KR1020157025480A priority patent/KR20150121076A/ko
Priority to EP14754233.6A priority patent/EP2960312B1/en
Publication of WO2014129395A1 publication Critical patent/WO2014129395A1/ja
Priority to US14/830,070 priority patent/US9487678B2/en

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    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C—CHEMISTRY; METALLURGY
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    • C09J9/02—Electrically-conducting adhesives
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/819—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
    • H01L2224/81901—Pressing the bump connector against the bonding areas by means of another connector
    • H01L2224/81903—Pressing the bump connector against the bonding areas by means of another connector by means of a layer connector
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83862—Heat curing
    • H—ELECTRICITY
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    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9211—Parallel connecting processes
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2924/0001—Technical content checked by a classifier
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    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to an anisotropic conductive adhesive used for anisotropic conductive connection of an LED element to an electrode substrate, and an LED light emitting device in which the LED element is mounted on the electrode substrate with the anisotropic conductive adhesive.
  • FIG. 7A shows a mounting method by wire bonding.
  • the LED chip 103 is placed on the wiring board 102 with the first and second electrodes 104 and 105 of the LED chip 103 facing upward (opposite side of the wiring board 102). It is fixed by die bond adhesives 110 and 111. Then, the first and second pattern electrodes 107 and 109 on the wiring substrate 102 and the first and second electrodes 104 and 105 of the LED chip 103 are electrically connected by bonding wires 106 and 108, respectively.
  • FIG. 7B shows a mounting method using a conductive paste.
  • the first and second electrodes 104 and 105 and the wiring are connected to the first and second electrodes 104 and 105 of the LED chip 103 facing the wiring substrate 102 side.
  • the first and second pattern electrodes 124 and 125 of the substrate 102 are electrically connected to each other by, for example, conductive pastes 122 and 123 such as copper paste, and the LED chip 103 is connected to the wiring substrate 102 by the sealing resins 126 and 127. Glue on top.
  • FIG. 7C shows a mounting method using an anisotropic conductive adhesive.
  • the first and second electrodes 104, 105 of the LED chip 103 are directed to the wiring substrate 102 side, and the first and second electrodes 104, 105,
  • the bumps 132 and 133 provided on the first and second pattern electrodes 124 and 125 of the wiring substrate 102 are electrically connected by the conductive particles 135 in the anisotropic conductive adhesive 134 and are anisotropic.
  • the LED chip 103 is bonded onto the wiring substrate 102 by the insulating adhesive resin 136 in the conductive adhesive 134.
  • the bonding wires 106 and 108 made of gold absorb light having a wavelength of, for example, 400 to 500 nm, so that the light emission efficiency is lowered.
  • the die bond adhesives 110 and 111 are cured using an oven, the curing time is long and it is difficult to improve the production efficiency.
  • the adhesive strength of only the conductive pastes 122 and 123 is weak, and reinforcement with the sealing resins 126 and 127 is required. Luminous efficiency is reduced by diffusion of light into the conductive pastes 122 and 123 or absorption of light within the conductive pastes 122 and 123.
  • the sealing resins 126 and 127 are cured using an oven, the curing time is long and it is difficult to improve the production efficiency.
  • the color of the conductive particles 135 in the anisotropic conductive adhesive 134 is brown, the color of the insulating adhesive resin 136 is also brown. Luminous efficiency is reduced by absorbing light in the conductive conductive adhesive 134.
  • an anisotropic layer that suppresses light absorption and does not reduce light emission efficiency by forming a conductive layer using silver (Ag) with high light reflectance and low electrical resistance. It has also been proposed to provide a conductive conductive adhesive.
  • an Ag-based thin film alloy excellent in reflectance, corrosion resistance, and migration resistance has also been proposed. If this Ag-based thin film alloy is coated on the surface of the conductive particles, the corrosion resistance and migration resistance will be improved, but if this Ag-based thin film alloy is used as the outermost layer and nickel is used for the underlayer, for example, the reflectance of nickel Is lower than Ag, there is a problem that the reflectivity of the entire conductive particle is lowered. Further, when Au or Ni is exposed on the surface of the conductive particles 135, the light emission efficiency is reduced due to light absorption.
  • An object of the present invention is to provide a light emitting device having high intensity of emitted light having a wavelength of 360 nm or more and 500 nm or less.
  • the present invention adheres an LED element containing an electrically conductive particle and an adhesive binder and having a peak which is the maximum intensity of emitted light within a wavelength range of 360 nm or more and 500 nm or less to an electrode substrate.
  • An anisotropic conductive adhesive for electrically connecting the electrode of the LED element and the electrode of the electrode substrate, wherein the conductive particles are formed by electrolytic plating on the resin particles and the resin particle surfaces.
  • a ground layer and a conductive light reflecting layer formed on the surface of the base layer by a sputtering method and containing Ag, Bi, and Nd. The light reflecting layer has a total weight of Ag, Bi, and Nd of 100.
  • An anisotropic conductive adhesive formed Te.
  • this invention is an anisotropic conductive adhesive whose reflectance of the hardened
  • this invention is an anisotropic conductive adhesive whose said base layer is a nickel thin film.
  • this invention is an anisotropic conductive adhesive which contains the said electrically-conductive particle in the range of 1 to 100 weight part with respect to 100 weight part of said heat-hardening insulation adhesive binders.
  • the present invention provides an anisotropic conductive adhesive in which a peak, which is the maximum intensity of emitted light, has a wavelength within a range of 360 nm or more and 500 nm or less, and a substrate, in which conductive particles are contained in an adhesive.
  • a light emitting device bonded with an agent, wherein the conductive particles include resin particles, an underlayer formed on the surface of the resin particles by an electrolytic plating method, and formed on the surface of the underlayer by a sputtering method.
  • the light-emitting device is formed by sputtering a sputtering target containing Ag, Bi, and Nd in a range of Nd of 0.1 wt% or more and 2.0 wt% or less.
  • the present invention also provides a method for producing an anisotropic conductive adhesive in which conductive particles are dispersed in an adhesive to produce an anisotropic conductive adhesive, wherein the anisotropic conductive adhesive comprises resin particles.
  • a base layer is formed on the surface by electrolytic plating, and the total weight of Ag, Bi, and Nd is 100% by weight, Bi is 0.1% by weight to 3.0% by weight, and Nd is 0.1% by weight to 2%.
  • Production of anisotropic conductive adhesive in which conductive particles are formed by sputtering a sputtering target containing Ag, Bi and Nd in a range of 0.0 wt% or less to form a light reflecting layer on the surface of the underlayer. Is the method.
  • the anisotropic conductive adhesive has high reflectivity for light with a wavelength of 360 nm or more and 500 nm or less, and the migration resistance of the conductive particles is high, so the intensity of emitted light with a wavelength of 360 nm or more and 500 nm or less is high.
  • a highly reliable light-emitting device can be obtained.
  • the light-emitting device 7 of this invention has the LED element 20 which has the peak which is the maximum value of emitted light intensity in the wavelength range of the range of 360 nm or more and 500 nm or less, and the electrode substrate 11. ing.
  • the LED element 20 has a semiconductor chip 9 made of a cut semiconductor substrate, and a pn bond is formed inside the semiconductor chip 9 by an introduced impurity (dopant).
  • the two electrodes 13 are provided apart from each other.
  • An insulating protective film 17 is formed on the surface of the semiconductor chip 9 provided with the electrode 13 so that at least a part of the electrode 13 is exposed.
  • the electrode substrate 11 has a substrate body 5 made of glass epoxy. On the substrate body 5, two connection terminals 15 made of a metal film are provided apart from each other. An insulating protective film 22 is formed on the surface of the substrate body 5 so that at least a part of the connection terminal 15 is exposed. The exposed portion of the connection terminal 15 has a bump whose top is flattened. 6 is provided.
  • the bump 6 may be formed on at least one of the surface of the connection terminal 15 of the electrode substrate 11 or the surface of the electrode 13 of the LED element 20. Even when formed, the upper portion of the bump 6 is desirably flat. Here, one bump 6 having a flat upper portion is provided on the surface of one connection terminal 15.
  • the distance between the two electrodes 13 provided on the LED element 20 is the same as the distance between the two bumps 6 provided on the electrode substrate 11, and the LED element 20 and the electrode substrate 11 are the same as the LED element 20 and the electrode.
  • uncured anisotropic conductive adhesive disposed between the substrate 11 and the electrodes 13 and the bumps 6 are pressed so as to be in a one-to-one contact with each other, uncured anisotropic conductive
  • the adhesive is cured and the LED element 20 is fixed to the electrode substrate 11.
  • symbol 21 of Fig.1 (a) has shown the anisotropic conductive adhesive before hardening.
  • the anisotropic conductive adhesive 21 has a binder resin 8 having adhesiveness in an uncured state and conductive particles 1 dispersed in the binder resin 8.
  • the type of the binder resin 8 is not particularly limited, but from the viewpoint of excellent transparency, adhesiveness, heat resistance, mechanical strength, and electrical insulation, a composition containing an epoxy resin and its curing agent. A thing can be used conveniently.
  • the epoxy resin is specifically an alicyclic epoxy compound, a heterocyclic epoxy compound, a hydrogenated epoxy compound, or the like.
  • Preferred examples of the alicyclic epoxy compound include those having two or more epoxy groups in the molecule. These may be liquid or solid. Specific examples include glycidyl hexahydrobisphenol A, 3,4-epoxycyclohexenylmethyl-3 ′, 4′-epoxycyclohexene carboxylate, and the like. Among them, glycidyl hexahydrobisphenol A, 3,4-epoxycyclohexenylmethyl-3 ′, 4 can be used because it is possible to ensure light transmission suitable for mounting LED elements on the cured product and excellent quick curing properties. '-Epoxycyclohexenecarboxylate can be preferably used.
  • heterocyclic epoxy compound examples include an epoxy compound having a triazine ring, and 1,3,5-tris (2,3-epoxypropyl) -1,3,5-triazine-2,4 is particularly preferable. , 6- (1H, 3H, 5H) -trione.
  • hydrogenated epoxy compound hydrogenated products of the above-described alicyclic epoxy compounds and heterocyclic epoxy compounds, and other known hydrogenated epoxy resins can be used.
  • epoxy resins may be used in combination as long as the effects of the present invention are not impaired.
  • examples of the curing agent include acid anhydrides, imidazole compounds, and dicyan.
  • acid anhydrides that are difficult to discolor the curing agent particularly alicyclic acid anhydride curing agents, can be used.
  • methylhexahydrophthalic anhydride and the like are suitable.
  • the amount of each used increases the amount of uncured epoxy compound if there is too little alicyclic acid anhydride type curing agent. If the amount is too large, the corrosion of the adherend material tends to be accelerated by the influence of the excess curing agent, so that 80 to 120 parts by mass can be used with respect to 100 parts by mass of the alicyclic epoxy compound. It is more suitable to use at a ratio of 105 parts by mass.
  • the binder resin 8 is a resin having thermosetting properties and insulating properties.
  • the anisotropic conductive adhesive 21 is heated while being bonded to the object to be bonded.
  • the anisotropic conductive adhesive 21 is cured in a state where it is adhered to the object to be bonded.
  • Reference numeral 12 in FIG. 2B indicates a cured anisotropic conductive adhesive. Even in the cured anisotropic conductive adhesive 12, the state in which the conductive particles 1 are dispersed is maintained, and a plurality of conductive particles 1 are located between the electrodes 13 and the bumps 6.
  • the uncured anisotropic conductive adhesive 21 is disposed on the substrate body 5, and the LED element 20 is disposed on the uncured anisotropic conductive adhesive 21, and the LED element 20 is uncured.
  • the bottom surface of the uncured anisotropic conductive adhesive 21 on the substrate body 5 side contacts the protective film 22 and the bump 6 of the substrate body 5, and the LED element 20 side.
  • the surface of is in contact with the protective film 17 of the LED element 20 and the electrode 13.
  • the uncured anisotropic conductive adhesive 21 is such that when the LED element 20 is pressed against the electrode substrate 11, the conductive particles 1 come into contact with both the electrode 13 and the bump 6, and the electrode 13 and the bump 6. Are securely connected electrically.
  • the cured binder resin 19 has an insulating property, and the conductive particles 1 located outside the electrodes 13 and the bumps 6 are not in contact with the other conductive particles 1, and between the electrodes 13 and the bumps. 6 is not short-circuited.
  • the LED element 20 has a pn junction formed therein.
  • connection terminal 15 When the connection terminal 15 is connected to the output terminal of the power source and a voltage is applied between the two connection terminals 15 so that the pn junction is forward-biased, the connection terminals 15, the bumps 6, the conductive particles 1, and the electrodes 13 are applied. Current flows through the pn junction, and the pn junction emits light.
  • the surface facing the electrode substrate 11 and facing outward is an emission light emitting surface. If a transparent package is provided, the surface is protected by the transparent package in the atmosphere. To emit light.
  • the semiconductor chip 9 and the protective film 17 on the semiconductor chip 9 have transparency through which the emitted light is transmitted.
  • the emitted light generated by the pn junction the emitted light that has traveled to the emission surface side is the semiconductor chip 9. Then, the light passes through the protective film 17 and the transparent package and is emitted to the outside of the light emitting device 7.
  • the cured binder resin 19 is also transparent to the emitted light, proceeds to the surface facing the electrode substrate 11, and the emitted light incident on the cured anisotropic conductive adhesive 12 is partly in the conductive particles 1. Irradiated.
  • the conductive particles 1 contained in the anisotropic conductive adhesives 12 and 21 are composed of resin particles 2 and a metal thin film formed on the surface of the resin particles 2 by electrolytic plating.
  • the underlayer 3 and the light reflecting layer 4 formed on the surface of the underlayer 3 by a sputtering method are included.
  • the resin particles 2 are not particularly limited, but from the viewpoint of obtaining high conduction reliability, for example, resin particles made of a crosslinked polystyrene type, a benzoguanamine type, a nylon type, a PMMA (polymethacrylate) type, or the like are used. Can do.
  • the size of the resin particles 2 is not particularly limited, but those having an average particle diameter of 3 ⁇ m to 5 ⁇ m can be used from the viewpoint of obtaining high conduction reliability.
  • the resin particles 2 are formed by forming an acrylic resin into a spherical shape
  • the base layer 3 is a nickel thin film formed on the surface of the resin particles 2 by an electrolytic plating method.
  • the light reflecting layer 4 is constituted by a thin film formed by sputtering a sputtering target containing Ag, Bi, and Nd with a sputtering gas (rare gas) within the range of the content rate described later.
  • Sputtering is one of the methods for forming a thin film on an object, and is performed in a vacuum.
  • a glow discharge is generated by applying a voltage between the film formation target and the sputtering target in a state where the inside of the container is evacuated. Electrons and ions generated thereby collide with the target at a high speed, so that particles of the target material are blown off, and the particles (sputtered particles) adhere to the surface of the film formation target to form a thin film.
  • fine particles dispersed up to primary particles are set in a container in the apparatus, and the fine particles are flowed by rotating the container. That is, by sputtering the fine particles in such a fluid state, the entire surface of each fine particle becomes a film formation surface, the sputtered particles of the target material collide with the film formation surface, and a thin film is formed on the entire surface of each fine particle. Can be formed.
  • a known sputtering method including a bipolar sputtering method, a magnetron sputtering method, a high frequency sputtering method, and a reactive sputtering method can be employed.
  • the base layer 3 is exposed on the film formation surface where the sputtered particles reach, and the surface of the resin particles 2 is not exposed. Since the sputtered particles arrive at the surface of the base layer 3, the surface of the resin particles 2 is not damaged by the sputtered particles, and the light reflecting layer 4 having a flat surface is formed on the conductive particles 1. Therefore, the emitted light incident on the conductive particles 1 is reflected by the light reflecting layer 4 formed on the surface of the base layer 3 and returned in the direction in which the LED element 20 is located.
  • the sputtering target on which the light reflecting layer 4 is formed is an alloy containing Ag, Bi, and Nd, and the content of Ag, Bi, and Nd in the target is 100% by weight of the total of Ag, Bi, and Nd.
  • the Bi content is in the range of 0.1 wt% to 3.0 wt%
  • the Nd content is in the range of 0.1 wt% to 2.0 wt%.
  • the Ag content is a value obtained by subtracting the Bi content and the Nd content from the value of 100% by weight.
  • a silver alloy thin film containing Ag, Bi, and Nd at this content rate is higher than the light reflectance of a thin film not containing silver, such as a gold thin film or Ni thin film, for light in the wavelength range of 360 nm to 740 nm. ing.
  • the LED element 20 included in the light emitting device 7 of the present invention is an LED element having a peak with the highest intensity within a wavelength range of 360 nm or more and 500 nm or less. Is reflected with high reflectivity by the conductive particles 1 and returned to the LED element 20 side, and reflected light that is stronger than that reflected by the gold thin film, Ni thin film, or the like passes through the LED element 20 and passes through the LED chip 20. The light is emitted from the emission surface to the outside of the light emitting device 7.
  • the content of the conductive particles 1 with respect to the heat-curing insulating binder resin 8 is not particularly limited. However, in consideration of securing light reflectance, migration resistance, and insulating properties, the binder resin 8 It is preferable to contain 1 part by weight or more and 100 parts by weight or less of the conductive particles 1 with respect to 100 parts by weight.
  • a light-reflective insulating filler (not shown) is dispersed inside the binder resin 8.
  • the light-reflective insulating filler of this example is white SiO 2 , for example, and does not enter the conductive particles 1, and the emitted light incident on the light-reflective insulating filler is reflected with a lower reflectance than the conductive particles 1. Then, the reflected light is returned to the LED element 20 side.
  • the surface of the substrate body 5 is colored white, and the emitted light incident on the surface of the substrate body 5 is reflected with a lower reflectance than the conductive particles 1 and returned to the LED element 20 side. Reflected light reflected by the light-reflective insulating filler and the surface of the substrate body 5 is also emitted to the outside from the emission surface through the LED element 20. The light emitted from the LED element 20 does not pass through the electrodes 13, the bumps 6, and the connection terminals 15.
  • a silver alloy thin film containing Bi and Nd at a weight% value in the above range is less likely to cause migration than a pure silver thin film. Therefore, disconnection due to migration does not occur in the light emitting device 7 of the present invention.
  • FIG. 6 is a graph showing the relationship of the reflectance with respect to the wavelength of incident light.
  • the curve f in the graph shows that the light reflecting layer 4 of the conductive particles 1 is 100% by weight of the total weight of Ag, Bi, and Nd.
  • the anisotropic conductive adhesion when formed by sputtering a sputtering target containing 0.7% by weight of Bi and 0.3% by weight of Nd (Ag is 99% by weight).
  • the reflectance of the agent is a graph showing the relationship of the reflectance with respect to the wavelength of incident light.
  • the curve f in the graph shows that the light reflecting layer 4 of the conductive particles 1 is 100% by weight of the total weight of Ag, Bi, and Nd.
  • the reflectance of the agent is 99% by weight.
  • a curve g in the graph of FIG. 6 shows the reflectance of the anisotropic conductive adhesive in which conductive particles that expose the light reflecting layer made of the Au layer are dispersed on the surface.
  • the anisotropic conductive adhesives of the curves f and g are the same except for the configuration of the light reflecting layer on the surface of the conductive particles.
  • the anisotropic conductive adhesive of the present invention has a large reflectance of 30% or more even in the range of 360 nm or more and 500 nm or less, compared with the conductive particles of the Au layer.
  • the light-emitting device 7 of the above embodiment has LED elements other than the blue LED element having the emission intensity distribution shown in FIG.
  • LED elements having peaks outside the range of 360 nm or more and 500 nm or less are arranged together, and blue and other than blue A light-emitting device that emits emitted light together is also included in the present invention.
  • FIG. 5 is an example of the relative intensity distribution of the emitted light of the light emitting device that is lit in white, and is an example in which LED elements whose emitted light is blue, green, and red are arranged inside the emitted light.
  • This light-emitting device is also included in the present invention as long as the blue LED element is attached to the substrate with the anisotropic conductive adhesive of the present invention.
  • the emitted light is shown in FIG. Intensity distribution as shown, and lights up in white.
  • This light-emitting device is also included in the present invention if the blue LED element is attached to the substrate with the anisotropic conductive adhesive of the present invention.
  • the base layer of the electroconductive particle used for this invention is a thin film of metals other than nickel, it should just be formed by the electroplating method.
  • a paste-like anisotropic conductive adhesive is preferable.
  • resin particles having an average particle diameter of 5 ⁇ m are immersed in a nickel plating solution, and a nickel thin film having a thickness of 0.03 ⁇ m or more and 3.0 ⁇ m or less is formed as an underlayer by electrolytic plating. Form on the surface of the particles.
  • the surface of the resin particle is covered with the base layer, and the surface of the resin particle is not exposed.
  • Bi is 0.1 wt% or more and 3.0 wt% or less
  • Nd is A sputtering target containing Ag, Bi, and Nd is disposed in a range of 0.1 wt% to 2.0 wt%, and resin particles having a base layer formed on the surface are provided inside the sputtering apparatus. Placed in a rotating container.
  • Sputtering gas is introduced into the inside of the sputtering apparatus, a sputtering gas is introduced, a voltage is applied to the sputtering target, sputtering is performed, sputtering particles reach the surface of the underlayer, and a light reflecting layer made of a silver alloy having the same composition as the sputtering target Is formed on the surface of the underlayer.
  • the rotating container is rotated, and while the resin particles on which the base layer is formed are rolled inside the rotating container, the sputtering particles are allowed to reach the entire surface of the base layer to form a light reflecting layer having a uniform film thickness on the surface of the base layer. Then, conductive particles in which the underlayer is not exposed are obtained. Since the surface of the resin particles is not exposed, the surface roughness of the resin particles due to the impact of the sputtering particles does not occur.
  • FIG. 1B is a cross-sectional view of the conductive particles 1.
  • the conductive particles carried out of the sputtering apparatus are mixed and dispersed in the range of 1 part by weight to 100 parts by weight, and the anisotropic conductive adhesive is create.
  • an uncured anisotropic conductive adhesive 10 having adhesiveness is disposed on the bump 6 of the electrode substrate 11, and then, as shown in FIG. 2 (b), the LED The element 20 is placed on the anisotropic conductive adhesive 10 and is heated and cured while being pressed.
  • the electrode 13 of the LED element 20 is directed to the surface of the electrode substrate 11 and heated while pressing with the conductive particles 1 positioned between the electrode 13 and the bump 6 to cure the anisotropic conductive adhesive 10.
  • Reference numeral 12 in FIG. 2B indicates a cured anisotropic conductive adhesive.
  • the conductive particle 1 is sandwiched between and in contact with the electrode 13 and the bump 6, the electrode 13 and the bump 6 are electrically connected by the conductive particle 1, and the LED element 20 is fixed to the electrode substrate 11, The light emitting device 7 described above is obtained.
  • it can seal with transparent mold resin so that the whole LED element 20 may be covered.
  • a sample used for measurement will be described.
  • a nickel thin film was formed as an underlayer on the acrylic resin particles by electrolytic plating.
  • Bi is 0.1 wt% or more and 3.0 wt% or less
  • Nd is 0.1 wt% or more and 2.0 wt% or less.
  • Four kinds of sputtering targets containing Ag, Bi, and Nd in a range were sputtered to form a light reflection layer on the surface of the underlayer, thereby producing four kinds of conductive particles.
  • the produced conductive particles were each dispersed in a binder resin to obtain anisotropic conductive adhesives of Examples 1 to 4.
  • the thickness of the nickel thin film is 0.10 ⁇ m
  • the thickness of the light reflecting layer is 0.2 ⁇ m.
  • composition of the sputtering target in which each light reflecting layer of the conductive particles dispersed in the anisotropic conductive adhesives of Examples 1 to 4 and Comparative Examples 3 to 5 to be described later was formed is shown in Table 1. It is shown in the “composition ratio” column in the column.
  • Comparative Examples 3, 4, and 5 using a sputtering target having a different content from that of the present invention, conductive particles having the same configuration except that the composition of the light reflecting layer is different in the same process as in Examples 1 to 4 were prepared.
  • the anisotropic conductive adhesives of Comparative Examples 3 to 5 were obtained by dispersing in a resin.
  • conductive particles were formed by forming a light reflecting layer made of a gold (Au) thin film to a thickness of 0.2 ⁇ m by electrolytic plating on the surface of the resin particles where the acrylic resin is exposed.
  • a light reflecting layer made of a nickel thin film having a thickness of 0.2 ⁇ m formed by electrolytic plating was formed on the surface of the resin particles where the acrylic resin was exposed to produce conductive particles.
  • the produced conductive particles were each dispersed in a binder resin to prepare an anisotropic conductive adhesive.
  • Examples 1 to 4 and Comparative Examples 1 to 5 20 parts by weight of conductive particles were dispersed with respect to 100 parts by weight of the binder resin (excluding the solvent). Moreover, the binder resin of each anisotropic conductive adhesive is the same type of resin, and has the same configuration except for the conductive particles. As the binder resin, an epoxy curable adhesive (CEL2021P-MeHHPA manufactured by Daicel) was used as a main component.
  • an epoxy curable adhesive (CEL2021P-MeHHPA manufactured by Daicel) was used as a main component.
  • the resin particle which exposes the acrylic resin surface which formed the gold thin film the resin particle which exposes the acrylic resin which formed the nickel thin film on the outermost surface as the light reflection layer, and the silver alloy (including pure silver) thin film as the reflection layer
  • the diameter of the nickel thin film particles formed on the surface is 5 ⁇ m.
  • ⁇ Reflectance measurement> The anisotropic conductive adhesives of Examples 1 to 4 and Comparative Examples 1 to 5 were applied to a white plate with a thickness of 100 ⁇ m, carried into a heat curing device and cured by heating, and then the reflectance was measured by spectrophotometry. It was measured by a meter (CM-3600d manufactured by Konica Minolta). Curing was performed under heating conditions of 200 ° C. for 1 minute. The measurement results are shown in the column of “Reflectance” in Table 1.
  • LED elements are mounted by applying the anisotropic conductive adhesives of Examples 1 to 4 and Comparative Examples 1 to 5 to the surface of an electrode substrate (glass epoxy substrate) provided with Au electrodes for mounting LEDs with Au bumps. Then, light emitting devices of Examples 1 to 4 and Comparative Examples 1 to 5 were produced. The LED element was mounted under the conditions of 200 ° C., 1 kg / element pressing pressure, and 20 seconds of thermocompression bonding.
  • a voltage of 3.2 V was applied to the obtained light emitting device to cause a 20 mA current to flow through the LED element to emit light.
  • the light emitted from the light emitting device is emitted from each of the light emitting devices of Examples 1 to 4 and Comparative Examples 1 to 5 using a total light amount measuring device (total light flux measuring system (integrating sphere) LE-2100 manufactured by Otsuka Electronics Co., Ltd.).
  • the total luminous flux was measured.
  • the measurement conditions are normal temperature and humidity.
  • the measurement results are shown in the “initial” column of “optical characteristics” in Table 1.
  • the light emitting devices of Examples 1 to 4 and Comparative Examples 1 to 5 were placed in an environment of 85 ° C. and 85% RH for 500 hours and then measured for the total luminous flux with the same measuring device.
  • the total luminous flux change rate which is the ratio between the total luminous flux and the difference between the total luminous flux after 500 hours of lighting, was calculated. The calculation results are shown in the column of “total luminous flux change rate” in Table 1. Comparative Examples 3 and 4 having a high Ag content rate have a high reflectivity, but have a high rate of change in the total luminous flux and are inferior in temporal variability.
  • the electrode substrate used for measuring the total luminous flux has a space of 100 ⁇ m wide and electrodes are provided in parallel.
  • the anisotropic conductive adhesives of Examples 1 to 4 and Comparative Examples 1 to 5 They are applied in contact with each other, and the gaps between the electrodes and the bumps are filled with an anisotropic conductive adhesive.

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Abstract

　放射光の強度が高い発光装置を提供する。３６０ｎｍ以上５００ｎｍ以下の範囲内に発光光のピークを有する青色ＬＥＤチップ２０は、異方性導電接着剤１２によって、電極基板１１に接着されている。異方性導電接着剤１２に含有される導電粒子１の表面には、銀合金の光反射層が形成されており、青色の光に対する反射率が高い。光反射層は、Ａｇ、Ｂｉ、Ｎｄの合計を１００重量％としたとき、Ｂｉを０．１重量％以上３．０重量％以下の値、Ｎｄを０．１重量％以上２．０重量％以下の値で含有するスパッタリングターゲットをスパッタして形成されており、マイグレーションに対する耐性も高い。

Description

異方性導電接着剤、発光装置及び異方性導電接着剤の製造方法
　本発明は、ＬＥＤ素子を電極基板に異方性導電接続するために使用する異方性導電接着剤およびその異方性導電接着剤でＬＥＤ素子を電極基板に実装してなるＬＥＤ発光装置に関する。
　近年、ＬＥＤを用いた光機能素子が注目されている。
　このような光機能素子としては、小型化等のため、ＬＥＤチップを配線基板上に直接実装するフリップチップ実装が行われている。
　配線基板上にＬＥＤチップをフリップチップ実装する方法としては、図７(ａ)～(ｃ)に示すように、従来、種々のものが知られている。
　図７(ａ)は、ワイヤボンディングによる実装方法である。
　図７(ａ)に示す発光装置１０１では、ＬＥＤチップ１０３の第１及び第２の電極１０４、１０５を上側(配線基板１０２と反対側)にした状態で、ＬＥＤチップ１０３を配線基板１０２上にダイボンド接着剤１１０、１１１によって固定する。
　そして、ボンディングワイヤ１０６、１０８によって配線基板１０２上の第１及び第２のパターン電極１０７、１０９とＬＥＤチップ１０３の第１及び第２の電極１０４、１０５をそれぞれ電気的に接続する。
　図７(ｂ)は、導電性ペーストによる実装方法である。
　図７(ｂ)に示す発光装置１２１では、ＬＥＤチップ１０３の第１及び第２の電極１０４、１０５を配線基板１０２側に向けた状態で、これら第１及び第２の電極１０４、１０５と配線基板１０２の第１及び第２のパターン電極１２４、１２５とを、例えば銅ペースト等の導電性ペースト１２２、１２３によって電気的に接続するとともに、封止樹脂１２６、１２７によってＬＥＤチップ１０３を配線基板１０２上に接着する。
　図７(ｃ)は、異方性導電接着剤による実装方法である。
　図７(ｃ)に示す発光装置１３１では、ＬＥＤチップ１０３の第１及び第２の電極１０４、１０５を配線基板１０２側に向けた状態で、これら第１及び第２の電極１０４、１０５と、配線基板１０２の第１及び第２のパターン電極１２４、１２５上に設けたバンプ１３２、１３３とを、異方性導電接着剤１３４中の導電性粒子１３５によって電気的に接続するとともに、異方性導電接着剤１３４中の絶縁性接着剤樹脂１３６によってＬＥＤチップ１０３を配線基板１０２上に接着する。
　しかしながら、上述した従来技術には、種々の課題がある。
　まず、ワイヤボンディングによる実装方法においては、金からなるボンディングワイヤ１０６、１０８が例えば波長が４００～５００ｎｍの光を吸収するため、発光効率が低下してしまう。
　また、この方法の場合、オーブンを用いてダイボンド接着剤１１０、１１１を硬化させるため、硬化時間が長く、生産効率を向上させることが困難である。
  一方、導電性ペースト１２２、１２３を用いる実装方法では、導電性ペースト１２２、１２３のみの接着力は弱く、封止樹脂１２６、１２７による補強が必要となるが、この封止樹脂１２６、１２７により、導電性ペースト１２２、１２３内へ光が拡散したり、導電性ペースト１２２、１２３内において光が吸収されることにより、発光効率が低下してしまう。
　また、この方法の場合、オーブンを用いて封止樹脂１２６、１２７を硬化させるため、硬化時間が長く、生産効率を向上させることが困難である。
　他方、異方性導電接着剤１３４を用いる実装方法では、異方性導電接着剤１３４中の導電性粒子１３５の色が茶色であるため絶縁性接着剤樹脂１３６の色も茶色になり、異方性導電接着剤１３４内において光が吸収されることにより、発光効率が低下してしまう。
　このような問題を解決するため、光の反射率が高く、電気抵抗が低い銀(Ａｇ)を用いて導電層を形成することによって光の吸収を抑え、発光効率を低下させることのない異方性導電接着剤を提供することも提案されている。
　しかし、銀は化学的に不安定な材料であるため、酸化や硫化しやすいという問題があり、また、熱圧着後において、通電を行うことによってマイグレーションが発生し、これにより配線部分の断線や接着剤の劣化による接着強度の低下を引き起こすという問題がある。
　かかる問題を解決するため、例えば特許文献４に記載されているように、反射率、耐食性、耐マイグレーション性に優れたＡｇ系薄膜合金も提案されている。
　このＡｇ系薄膜合金を導電性粒子の表面に被覆すれば、耐食性、耐マイグレーション性は向上するが、このＡｇ系薄膜合金を最表層に用い、下地層に例えばニッケルを用いると、ニッケルの反射率がＡｇより低いため、導電性粒子全体の反射率が低下してしまうという問題がある。
　また、導電性粒子１３５の表面に、ＡｕやＮｉが露出すると、光の吸収によって、発光効率が低下する。
特開２００５－１２０３７５号公報 特開平５－１５２４６４号公報 特開２００３－２６７６３号公報 特開２００８－２６６６７１号公報
　本発明の課題は、３６０ｎｍ以上５００ｎｍ以下の波長の放出光の強度が高い発光装置を提供することにある。
　上記課題を解決するため本発明は、導電粒子と、接着バインダーとを含有し、発光光の最大強度であるピークが、波長が３６０ｎｍ以上５００ｎｍ以下の範囲内に位置するＬＥＤ素子を電極基板に接着させ、前記ＬＥＤ素子の電極と前記電極基板の電極とを電気接続させる異方性導電接着剤であって、前記導電粒子は、樹脂粒子と、前記樹脂粒子表面に電解メッキ法で形成された下地層と、前記下地層表面にスパッタリング法で形成され、Ａｇ、Ｂｉ、Ｎｄとを含有する導電性の光反射層とを有し、前記光反射層は、Ａｇ、Ｂｉ、Ｎｄの合計重量を１００重量％として、Ｂｉが０．１重量％以上３．０重量％以下、Ｎｄが０．１重量％以上２．０重量％以下の範囲でＡｇとＢｉとＮｄとを含有するスパッタリングターゲットをスパッタリングして形成された異方性導電接着剤である。
　また、本発明は、前記異方性導電接着剤の硬化物の反射率が、３６０ｎｍ以上７４０ｎｍ以下の波長領域において、３０％以上である異方性導電接着剤である。
　また、本発明は、前記下地層はニッケル薄膜である異方性導電接着剤である。
　また、本発明は、加熱硬化絶縁性の前記接着バインダー１００重量部に対して、前記導電粒子を１重量部以上１００重量部以下の範囲で含有する異方性導電接着剤である。
　また、本発明は、発光光の最大強度であるピークが、波長が３６０ｎｍ以上５００ｎｍ以下の範囲内に位置するＬＥＤ素子と、基板とが、接着剤に導電粒子が含有された異方性導電接着剤で接着された発光装置であって、前記導電粒子は、樹脂粒子と、前記樹脂粒子表面に電解メッキ法で形成された下地層と、前記下地層表面にスパッタリング法で形成され、Ａｇ、Ｂｉ、Ｎｄとを含有する導電性の光反射層とを有し、前記光反射層は、Ａｇ、Ｂｉ、Ｎｄの合計重量を１００重量％として、Ｂｉが０．１重量％以上３．０重量％以下、Ｎｄが０．１重量％以上２．０重量％以下の範囲でＡｇとＢｉとＮｄとを含有するスパッタリングターゲットをスパッタリングして形成された発光装置である。
　また、本発明は、導電性粒子を接着剤に分散させて異方性導電接着剤を製造する異方性導電接着剤の製造方法であって、前記異方性導電接着剤は、樹脂粒子の表面に電解メッキ法によって下地層を形成し、Ａｇ、Ｂｉ、Ｎｄの合計重量を１００重量％として、Ｂｉが０．１重量％以上３．０重量％以下、Ｎｄが０．１重量％以上２．０重量％以下の範囲でＡｇとＢｉとＮｄとを含有するスパッタリングターゲットをスパッタリングして前記下地層の表面に光反射層を形成して前記導電粒子を形成する異方性導電接着剤の製造方法である。
　本発明によれば、異方性導電接着剤の３６０ｎｍ以上５００ｎｍ以下の波長の光に対する反射率が高く、導電粒子の耐マイグレーション性も高いので、３６０ｎｍ以上５００ｎｍ以下の波長の発光光の強度が高く、信頼性も高い発光装置が得られる。
(ａ)：本発明の異方性導電接着剤を説明するための図　(ｂ)：異方性導電接着剤に分散される導電粒子の断面図 (ａ)：電極基板上に異方性導電接着剤を塗布した状態を示す断面図　(ｂ)：ＬＥＤ発光装置を説明するための断面図 本発明に用いられる青色ＬＥＤ素子の発光光のピークを説明するためのグラフ 青色ＬＥＤ素子と蛍光体を用いた本発明の発光装置の放出光の波長分布を示すグラフ 赤、緑、青のＬＥＤ素子の発光光のピークを説明するためのグラフ 本発明に用いられる導電粒子と比較例の金薄膜が形成された導電粒子の反射率と波長の関係を示すグラフ (ａ)：ワイヤボンディングによる実装方法を説明するための断面図　(ｂ)：導電性ペーストを用いる工法を説明するための断面図　(ｃ)：異方性導電接着剤を用いる工法を説明するための断面図
　まず、本発明の発光装置について説明する。
　図２（ｂ）を参照し、本発明の発光装置７は、３６０ｎｍ以上５００ｎｍ以下の範囲の波長領域に発光光強度の最大値であるピークを有するＬＥＤ素子２０と、電極基板１１とを有している。
　ＬＥＤ素子２０は切断された半導体基板から成る半導体チップ９を有しており、半導体チップ９の内部には導入された不純物（ドーパント）によってｐｎ結合が形成されており、半導体チップ９の一表面上には、２つの電極１３が離間して設けられている。
　電極１３が設けられた半導体チップ９の表面上には、電極１３の少なくとも一部が露出するように、絶縁性の保護膜１７が形成されている。
　電極基板１１は、ガラスエポキシ製の基板本体５を有しており、基板本体５上には、金属膜によって構成された２つの接続端子１５が離間して設けられている。
　基板本体５の表面上には、接続端子１５の少なくとも一部が露出するように、絶縁性の保護膜２２が形成されており、接続端子１５の露出部分には、上部が平坦にされたバンプ６が設けられている。
　なお、バンプ６は、電極基板１１の接続端子１５の表面上、または、ＬＥＤ素子２０の電極１３の表面上の、少なくともいずれか一方に形成されていれば良く、ＬＥＤ素子２０の電極１３上に形成されている場合でも、バンプ６の上部は、平坦であることが望ましい。ここでは、一個の接続端子１５の表面上に、上部が平坦なバンプ６は一個設けられている。
　ＬＥＤ素子２０に設けられた２つの電極１３間の距離は、電極基板１１に設けられた２つのバンプ６間の距離と同じであり、ＬＥＤ素子２０と電極基板１１とは、ＬＥＤ素子２０と電極基板１１との間に未硬化の異方性導電接着剤が配置された状態で、電極１３とバンプ６とが一対一に対面して接触するように押圧されて、未硬化の異方性導電接着剤が硬化されてＬＥＤ素子２０が電極基板１１に固定されている。
　図１(ａ)の符号２１は、硬化前の異方性導電接着剤を示している。
　この異方性導電接着剤２１は、未硬化の状態では接着性を有するバインダー樹脂８と、バインダー樹脂８中に分散された導電粒子１とを有している。
　バインダー樹脂８の種類は、特に限定されることはないが、透明性、接着性、耐熱性、機械的強度、電気絶縁性に優れる観点からは、エポキシ系樹脂と、その硬化剤とを含む組成物を好適に用いることができる。
　エポキシ系樹脂は、具体的には、脂環式エポキシ化合物や複素環式エポキシ化合物や水素添加エポキシ化合物などである。脂環式エポキシ化合物としては、分子内に２つ以上のエポキシ基を有するものが好ましく挙げられる。これらは液状であっても、固体状であってもよい。具体的には、グリシジルヘキサヒドロビスフェノールＡ、３，４－エポキシシクロヘキセニルメチル－３'，４'－エポキシシクロヘキセンカルボキシレート等を挙げることができる。中でも、硬化物にＬＥＤ素子の実装等に適した光透過性を確保でき、速硬化性にも優れている点から、グリシジルヘキサヒドロビスフェノールＡ、３，４－エポキシシクロヘキセニルメチル－３'，４'－エポキシシクロヘキセンカルボキシレートを好ましく使用することができる。
　複素環系エポキシ化合物としては、トリアジン環を有するエポキシ化合物を挙げることができ、特に好ましくは１，３，５－トリス（２，３－エポキシプロピル）－１，３，５－トリアジン－２，４，６－（１Ｈ，３Ｈ，５Ｈ）－トリオンを挙げることができる。
　水素添加エポキシ化合物としては、先述の脂環式エポキシ化合物や複素環式エポキシ化合物の水素添加物や、その他公知の水素添加エポキシ樹脂を使用することができる。
　また、これらのエポキシ化合物に加えて本発明の効果を損なわない限り、他のエポキシ樹脂を併用してもよい。例えば、ビスフェノールＡ、ビスフェノールＦ、ビスフェノールＳ、テトラメチルビスフェノールＡ、ジアリールビスフェノールＡ、ハイドロキノン、カテコール、レゾルシン、クレゾール、テトラブロモビスフェノールＡ、トリヒドロキシビフェニル、ベンゾフェノン、ビスレゾルシノール、ビスフェノールヘキサフルオロアセトン、テトラメチルビスフェノールＡ、テトラメチルビスフェノールＦ、トリス（ヒドロキシフェニル）メタン、ビキシレノール、フェノールノボラック、クレゾールノボラックなどの多価フェノールとエピクロルヒドリンとを反応させて得られるグリシジルエーテル１グリセリン、ネオペンチルグリコール、エチレングリコール、プロピレングリコール、チレングリコール、ヘキシレングリコール、ポリエチレングリコール、ポリプロピレングリコールなどの脂肪族多価アルコールとエピクロルヒドリンとを反応させて得られるポリグリシジルエーテルｌｐ－オキシ安息香酸、β－オキシナフトエ酸のようなヒドロキシカルボン酸とエピクロルヒドリンとを反応させて得られるグリシジルエーテルエステル１フタル酸、メチルフタル酸、イソフタル酸、テレフタル酸、テトラハイドロフタル酸、エンドメチレンテトラハイドロフタル酸、エンドメチレンヘキサハイドロフタル酸、トリメリット酸、重合脂肪酸のようなポリカルボン酸から得られるポリグリシジルエステル１アミノフェノール、アミノアルキルフェノールから得られるグリシジルアミノグリシジルエーテル１アミノ安息香酸から得られるグリシジルアミノグリシジルエステル１アニリン、トルイジン、トリブロムアニリン、キシリレンジアミン、ジアミノシクロヘキサン、ビスアミノメチルシクロヘキサン、４，４'－ジアミノジフェニルメタン、４，４'－ジアミノジフェニルスルホンなどから得られるグリシジルアミン１エポキシ化ポリオレフィン等の公知のエポキシ樹脂類が挙げられる。
　また、硬化剤としては、酸無水物、イミダゾール化合物、ジシアンなどを挙げることができる。中でも、硬化剤を変色させ難い酸無水物、特に脂環式酸無水物系硬化剤を使用することができる。具体的には、メチルヘキサヒドロフタル酸無水物等が適している。
　なお、脂環式のエポキシ化合物と脂環式酸無水物系硬化剤とを使用する場合、それぞれの使用量は、脂環式酸無水物形硬化剤が少なすぎると未硬化エポキシ化合物が多くなり、多すぎると余剰の硬化剤の影響で被着体材料の腐食が促進される傾向があるので、脂環式エポキシ化合物１００質量部に対し、８０～１２０質量部を用いることができ、９５～１０５質量部の割合で使用することがより適している。
　バインダー樹脂８は、熱硬化性と、絶縁性とを有する樹脂であり、接着対象物にバインダー樹脂８が接触し、異方性導電接着剤２１が接着対象物に接着した状態で加熱されると、異方性導電接着剤２１は接着対象物に対して接着した状態で硬化される。
　図２（ｂ）の符号１２は、硬化した異方性導電接着剤を示している。
　硬化した状態の異方性導電接着剤１２でも導電粒子１が分散された状態が維持されており、電極１３とバンプ６との間には複数の導電粒子１が位置している。
　未硬化の異方性導電接着剤２１は、基板本体５上に配置され、更に、その未硬化の異方性導電接着剤２１上にＬＥＤ素子２０が配置され、ＬＥＤ素子２０が未硬化の異方性導電接着剤２１に押圧されると、未硬化の異方性導電接着剤２１の基板本体５側の底面は、基板本体５の保護膜２２とバンプ６とに接触し、ＬＥＤ素子２０側の表面は、ＬＥＤ素子２０の保護膜１７と電極１３とに接触する。
　そして、未硬化の異方性導電接着剤２１は、ＬＥＤ素子２０が電極基板１１に押圧されることで、導電粒子１は、電極１３とバンプ６との両方に接触し、電極１３とバンプ６とが電気的に確実に接続される。なお、硬化したバインダー樹脂１９は、絶縁性を有しており、電極１３とバンプ６の間の外側に位置する導電粒子１は、他の導電粒子１と非接触であり、電極１３間やバンプ６間は短絡しないようになっている。
　ＬＥＤ素子２０には、内部にｐｎ接合が形成されている。
　接続端子１５を電源の出力端子に接続し、ｐｎ接合が順バイアスされるように、２つの接続端子１５間に電圧を印加する場合には、接続端子１５、バンプ６、導電粒子１、電極１３を通過してｐｎ接合部に電流が流れ、ｐｎ接合の部分が発光する。
　ＬＥＤ素子２０の表面のうち、電極基板１１と対面せず、外方に向けられた表面は発光光の放出面であり、透明パッケージを設ければ、透明パッケージで保護された状態で、大気中に発光光を放出するようにされている。
　半導体チップ９や半導体チップ９上の保護膜１７は、発光光が透過する透明性を有しており、ｐｎ接合で生成された発光光のうち、放出面側に進行した発光光は半導体チップ９と保護膜１７と透明パッケージ等を通過し、発光装置７の外部に放出される。
　硬化したバインダー樹脂１９も発光光に対して透明であり、電極基板１１と対向する面側に進行し、硬化した異方性導電接着剤１２に入射した発光光は、一部が導電粒子１に照射される。
　図１(ｂ)に示すように、異方性導電接着剤１２、２１に含有された導電粒子１は、樹脂粒子２と、樹脂粒子２の表面に電解メッキ法によって形成された金属薄膜から成る下地層３と、下地層３の表面にスパッタリング法によって形成された光反射層４とを有している。
　樹脂粒子２については、特に限定されることはないが、高い導通信頼性を得る観点からは、例えば架橋ポリスチレン系、ベンゾグアナミン系、ナイロン系、ＰＭＭＡ（ポリメタクリレート）系などからなる樹脂粒子を用いることができる。
　樹脂粒子２の大きさは、特に限定されることはないが、高い導通信頼性を得る観点からは、平均粒径で３μｍ～５μｍのものを用いることができる。
　ここでは、樹脂粒子２は、アクリル樹脂が球状に成形されて構成されており、下地層３は、樹脂粒子２の表面に、電解メッキ法によって形成されたニッケル薄膜である。
　光反射層４は、後述の含有率の範囲内で、Ａｇ、Ｂｉ、Ｎｄを含有するスパッタリングターゲットが、スパッタリングガス(希ガス)によってスパッタされて形成された薄膜によって構成されている。
　スパッタリング法は、物体に薄膜を形成する方法の一つであり、真空中で行うものである。スパッタリング法では、容器内を真空にした状態で、成膜対象物とスパッタリングターゲットとの間に電圧を印加してグロー放電を生じさせる。これにより発生した電子やイオンが高速でターゲットに衝突することにより、ターゲット材料の粒子が弾き飛ばされ、その粒子（スパッタ粒子）が成膜対象物の表面に付着して薄膜が形成される。
　ここで、本発明のような微小な粒子にスパッタリングによって薄膜を形成する方法としては、一次粒子まで分散させた微粒子を装置内の容器にセットし、容器を回転させて微粒子を流動させるとよい。すなわち、このような流動状態の微粒子に対してスパッタリングを行うことにより、各微粒子の全面が成膜面となって、成膜面にターゲット材料のスパッタ粒子が衝突し、各微粒子の全面に薄膜を形成させることができる。
　また、本発明に適用するスパッタリング法としては、二極スパッタリング法、マグネトロンスパッタリング法、高周波スパッタリング法、反応性スパッタリング法を含む公知のスパッタリング法を採用することが可能である。
　スパッタリングの際、スパッタリング粒子が到達する成膜面には下地層３が露出しており、樹脂粒子２の表面は露出していない。スパッタリング粒子は、下地層３の表面に到着するから、樹脂粒子２の表面はスパッタリング粒子によるダメージは受けず、導電粒子１には、表面が平坦な光反射層４が形成されている。
　従って、導電粒子１に入射した発光光は、下地層３の表面に形成された光反射層４によって反射され、ＬＥＤ素子２０が位置する方向に返光される。
　光反射層４を形成したスパッタリングターゲットは、Ａｇ、Ｂｉ、Ｎｄを含有する合金であり、ターゲット中のＡｇ、Ｂｉ、Ｎｄの含有率は、Ａｇ、Ｂｉ、Ｎｄの合計を１００重量％としたときに、Ｂｉの含有率は０．１重量％以上３．０重量％以下の値であり、Ｎｄの含有率は０．１重量％以上２．０重量％以下の値にされている。Ａｇの含有率は、１００重量％の値からＢｉの含有率とＮｄの含有率とを差し引いた値である。
　この含有率でＡｇ、Ｂｉ、Ｎｄとを含有する銀合金薄膜は、波長３６０ｎｍ以上７４０ｎｍ以下の範囲の光に対し、金薄膜やＮｉ薄膜等の銀を含有しない薄膜の光反射率よりも高くなっている。
　他方、本発明の発光装置７が有するＬＥＤ素子２０は、図３に示すように、波長３６０ｎｍ以上５００ｎｍ以下の範囲内に強度が最も大きいピークが存在するＬＥＤ素子であり、ＬＥＤ素子２０の発光光は、導電粒子１によって高反射率で反射されてＬＥＤ素子２０側に返光され、金薄膜やＮｉ薄膜等で反射された場合よりも強い反射光がＬＥＤ素子２０を通って、半導体チップ９の放出面から発光装置７の外部に放出される。
　本発明の場合、加熱硬化絶縁性のバインダー樹脂８に対する導電性粒子１の含有量は特に限定されることはないが、光反射率、耐マイグレーション性、絶縁性の確保を考慮すると、バインダー樹脂８を１００重量部に対し、導電性粒子１を１重量部以上１００重量部以下含有させることが好ましい。
　バインダー樹脂８の内部には、導電粒子１の他、光反射性絶縁充填物（不図示）が分散されている。本例の光反射性絶縁充填物は、例えば、白色のＳｉＯ2であり、導電粒子１に入射せず、光反射性絶縁充填物に入射した発光光は、導電粒子１より低い反射率で反射され、反射光がＬＥＤ素子２０側に返光される。
　また、基板本体５の表面は白色に着色されており、基板本体５表面に入射した発光光は、導電粒子１より低い反射率で反射され、ＬＥＤ素子２０側に返光される。
　光反射性絶縁充填物や基板本体５の表面で反射された反射光も、ＬＥＤ素子２０を通って、放出面から外部に放出される。
　なお、ＬＥＤ素子２０の発光光は、電極１３とバンプ６と接続端子１５は透過しない。
　発光装置７の発光時間が長くなると、導電粒子１に電流が流れる時間が長くなり、Ａｇ薄膜では、(エレクトロ)マイグレーションによる断線を生じる。上記範囲の重量％の値でＢｉとＮｄを含有する銀合金薄膜は、純銀の薄膜に比べてマイグレーションが発生しにくい。従って、本発明の発光装置７では、マイグレーションによる断線が生じない。
　金属薄膜の反射率の値は、入射光の波長によって変化する。
　図６は、入射光の波長に対する反射率の関係を示すグラフであり、同図グラフの曲線ｆは、上記導電粒子１の光反射層４が、Ａｇ、Ｂｉ、Ｎｄの合計重量を１００重量％としたときに、Ｂｉが０．７重量％、Ｎｄが０．３重量％(Ａｇは９９重量％)の含有率で含有するスパッタリングターゲットをスパッタリングして形成されたときの、異方性導電接着剤の反射率である。
　同図のグラフの曲線ｇは、表面にＡｕ層からなる光反射層が露出する導電粒子が分散された異方性導電接着剤の反射率を示している。
　曲線ｆ、ｇの異方性導電接着剤は、導電粒子表面の光反射層の構成を除いて、他の構成は同一である。
　図６から分かるように、本発明の異方性導電接着剤は、Ａｕ層の導電粒子と比較して、３６０ｎｍ以上５００ｎｍ以下の範囲でも、反射率が３０％以上と大きな値になっている。
　以下、３６０ｎｍ以上５００ｎｍ以下の範囲にピークを有するＬＥＤ素子を青色ＬＥＤ素子と称すると、上記実施例の発光装置７は、図３に示した発光強度分布の青色ＬＥＤ素子以外のＬＥＤ素子を有していなかったが、本発明の異方性導電接着剤によって基板に貼付した青色ＬＥＤ素子に加え、３６０ｎｍ以上５００ｎｍ以下の範囲外にピークを有するＬＥＤ素子を一緒に配置し、青色と、青色以外の発光光を一緒に放出する発光装置も本発明に含まれる。
　図５は、白色で点灯する発光装置の発光光の相対強度分布の一例であり、発光光の内部に、発光光が青色、緑色、赤色のＬＥＤ素子が配置された場合である。この発光装置でも、青色ＬＥＤ素子が、本発明の異方性導電接着剤によって基板に貼付されていれば、本発明に含まれる。
　また、本発明の異方性導電接着剤によって基板に貼付された青色ＬＥＤ素子と、青色ＬＥＤ素子の放出光が照射される蛍光体とを配置した発光装置については、放出光が図４に示されたような強度分布になり、白色に点灯する。この発光装置についても、青色ＬＥＤ素子が、本発明の異方性導電接着剤によって基板に貼付されていれば、本発明に含まれる。
　なお、本発明に用いられる導電粒子の下地層は、ニッケル以外の金属の薄膜であっても、電解メッキ法で形成されていればよい。
　本発明の異方性導電接着剤については、ペースト状の異方性導電接着剤が好ましい。
 ＜導電粒子、異方性導電接着剤及び発光装置の製造工程＞
　本発明の異方性導電接着剤の製造工程を説明する。
　まず、平均粒径５μｍの樹脂粒子(ここではアクリル樹脂の粒子)をニッケルメッキ液内に浸漬させ、電解メッキ法によって、０．０３μｍ以上３．０μｍ以下の膜厚のニッケル薄膜を下地層として樹脂粒子の表面に形成する。樹脂粒子の表面は下地層で覆われ、樹脂粒子の表面は露出しない。
　予め、スパッタリング装置(共立社製　粉体スパッタリング装置)の内部に、Ａｇ、Ｂｉ、Ｎｄの合計重量を１００重量％としたときに、Ｂｉが０．１重量％以上３．０重量％以下、Ｎｄが０．１重量％以上２．０重量％以下の範囲でＡｇとＢｉとＮｄとを含有するスパッタリングターゲットを配置しておき、表面に下地層が形成された樹脂粒子を、スパッタリング装置の内部に設けられた回転容器内に配置する。
　スパッタリング装置の内部を真空雰囲気にしてスパッタリングガスを導入し、スパッタリングターゲットに電圧を印加してスパッタリングし、下地層の表面にスパッタリング粒子を到達させ、スパッタリングターゲットと同じ組成の銀合金から成る光反射層を下地層の表面に形成する。
　このとき回転容器を回転させ、下地層が形成された樹脂粒子を回転容器内部で転がしながらスパッタリング粒子を下地層の表面に満遍なく到達させ、下地層表面に均一な膜厚の光反射層を形成し、下地層が露出しない導電粒子を得る。
　樹脂粒子表面は露出していないので、スパッタリング粒子の衝撃による樹脂粒子の表面荒れは発生しない。
　光反射層が所定の厚みに形成された後、スパッタリングを終了して、スパッタリング装置から導電粒子を搬出する。図１（ｂ）は、導電粒子１の断面図である。
　次に、熱硬化性樹脂から成るバインダー樹脂１００重量部に対して、スパッタリング装置から搬出した導電粒子を１重量部以上１００重量部以下の範囲で混合して分散させ、異方性導電接着剤を作成する。
　図２（ａ）に示すように、未硬化で接着性を有する異方性導電接着剤１０を、電極基板１１のバンプ６上に配置し、次いで、同図(ｂ)に示すように、ＬＥＤ素子２０を異方性導電接着剤１０上に乗せ、押圧しながら加熱して硬化させる。
　ＬＥＤ素子２０の電極１３は、電極基板１１の表面に向けられ、電極１３とバンプ６との間に導電粒子１が位置した状態で押圧しながら加熱し、異方性導電接着剤１０を硬化させる。
　同図(ｂ)の符号１２は、硬化した異方性導電接着剤を示している。
　導電粒子１は、電極１３とバンプ６とで挟まれて両方に接触しており、導電粒子１によって電極１３とバンプ６とが電気的に接続され、ＬＥＤ素子２０が電極基板１１に固定され、上述した発光装置７が得られる。
　ＬＥＤ素子２０に電流が流れて発光すると、ＬＥＤ素子２０の半導体チップ９と電極基板１１とが対面する部分に位置する導電粒子１が発光光を反射させ、発光装置７の外部に放出させる。
　なお、発光装置７の製造において、ＬＥＤ素子２０の全体を覆うように透明モールド樹脂で封止することができる。
　測定に用いるサンプルを説明する。
　まず、アクリル樹脂粒子に電解メッキ法によってニッケル薄膜を下地層として形成した。次に、Ａｇ、Ｂｉ、Ｎｄの合計重量を１００重量％としたときに、Ｂｉが０．１重量％以上３．０重量％以下、Ｎｄが０．１重量％以上２．０重量％以下の範囲でＡｇとＢｉとＮｄとを含有する４種類のスパッタリングターゲットをスパッタリングして下地層の表面に光反射層をそれぞれ形成し、４種類の導電粒子を作成した。
　作成した導電粒子はバインダー樹脂にそれぞれ分散させ、実施例１～４の異方性導電接着剤を得た。ニッケル薄膜の膜厚は０．１０μｍ、光反射層の膜厚は、０．２μｍである。
　実施例１～４、及び後述する比較例３～５の異方性導電接着剤に分散された導電粒子の、各光反射層を形成したスパッタリングターゲットの組成を、表１の「最表面金属」の欄中の「組成比」の欄に示す。
Figure JPOXMLDOC01-appb-T000001
　実施例１は、Ａｇ：Ｂｉ：Ｎｄ＝９９：０．７：０．３、実施例２はＡｇ：Ｂｉ：Ｎｄ＝９９．８：０．１：０．１、実施例３はＡｇ：Ｂｉ：Ｎｄ＝９５：３：２、実施例４はＡｇ：Ｂｉ：Ｎｄ＝９９：０．７：０．３である。
　比較例３、４、５では、本発明とは含有率が異なるスパッタリングターゲットを用い、実施例１～４と同じ工程で光反射層の組成が異なる他は同じ構成の導電粒子を作成し、バインダー樹脂に分散させ、比較例３～５の異方性導電接着剤を得た。
　比較例３～５のスパッタリングターゲットの組成比は、それぞれ、純Ａｇ、Ａｇ：Ｂｉ：Ｎｄ＝９９．９：０．０５：０．０５、Ａｇ：Ｂｉ：Ｎｄ＝９４：３：３である。
　比較例１では、樹脂粒子のアクリル樹脂が露出する表面に金(Ａｕ)薄膜から成る光反射層を電解メッキ法によって０．２μｍの膜厚に形成して導電粒子を作成し、比較例２では、樹脂粒子のアクリル樹脂が露出する表面に電解メッキ法によって形成した膜厚０．２μｍのニッケル薄膜から成る光反射層を形成して導電粒子を作成した。作成した導電粒子をそれぞれバインダー樹脂に分散させて異方性導電接着剤を作成した。
　実施例１～４と比較例１～５は、バインダー樹脂１００重量部(溶剤を除く)に対して２０重量部の導電粒子を分散させた。また、各異方性導電接着剤のバインダー樹脂は同一種類の樹脂であり、導電粒子以外は同じ構成である。
　バインダー樹脂には、エポキシ硬化系接着剤(ダイセル社製CEL2021P-MeHHPA)を主成分に用いた。
　なお、金薄膜を形成したアクリル樹脂表面が露出する樹脂粒子と、最表面のニッケル薄膜を光反射層として形成したアクリル樹脂が露出する樹脂粒子と、及び銀合金（純銀を含む）薄膜を反射層として形成した表面がニッケル薄膜の粒子の直径は、それぞれ５μｍである。
＜樹脂粒子の色＞
　実施例１～４、比較例１～５の各異方性導電接着剤に含有させる樹脂粒子の色を観察した。観察結果を表１の「粒子外観」の欄に示す。比較例１、２の導電粒子は着色されており、発光素子の反射光は着色されて返光されることが分かる。
＜反射率測定＞
　実施例１～４、比較例１～５の各異方性導電接着剤を、白色板に厚み１００μｍで塗布し、加熱硬化装置内に搬入して加熱硬化させた後、反射率を分光測色計(コニカミノルタ社製ＣＭ－３６００ｄ)によって測定した。硬化は、２００℃、一分間の加熱条件で行った。
　測定結果を表１の「反射率」の欄に示す。
＜光学特性＞
　Ａｕバンプ付きＬＥＤ実装用Ａｕ電極が設けられた電極基板(ガラスエポキシ基板)の表面に、実施例１～４、比較例１～５の各異方性導電接着剤を塗布してＬＥＤ素子を搭載し、実施例１～４、比較例１～５の発光装置を作成した。
　ＬＥＤ素子の搭載は、２００℃、１ｋｇ／素子の押圧圧力、２０秒間の加熱圧着条件で行った。
　得られた発光装置には、３．２Ｖの電圧を印加してＬＥＤ素子に２０ｍＡの電流を流して発光させた。発光装置からの放出光は、全光量測定装置（大塚電子株式会社製の全光束測定システム（積分球）ＬＥ－２１００）を用いて、実施例１～４、比較例１～５の各発光装置について、全光束量を測定した。測定条件は、常温常湿度である。
　測定結果は、表１の「光学特性」の「初期」の欄に示す。
　また、実施例１～４、比較例１～５の各発光装置を、８５℃、８５％ＲＨの環境下に置いて５００時間点灯させた後、同じ測定装置によって全光束量を測定し、初期の全光束量と、５００時間点灯後の全光束量の差との比である全光束量変化率を算出した。
　算出結果は、表１の「全光束量変化率」の欄に示す。
　Ａｇの含有率が高い比較例３、４は、反射率が高いものの、全光束量変化率が高く、経時変化性に劣る。
＜信頼性試験＞
　全光束量の測定に用いた電極基板は、幅１００μｍのスペースを開けて電極が平行に設けられており、実施例１～４、比較例１～５の異方性導電接着剤は、電極と接触して塗布され、電極間や、バンプ間は異方性導電接着剤によって充填されている。
　８５℃、８５％ＲＨの環境下に置いて５００時間点灯させた結果、Ａｇの含有率が高い比較例３、４の電極間にリーク電流が検出された。表１の導通信頼性の欄には、比較例３、４に「×」を記載しておく。
　比較例３、４では導電粒子の変色が観察され、マイグレーションの発生が確認された。
　１……導電粒子
　２……樹脂粒子
　３……下地層
　４……光反射層
　７……発光装置
　９……半導体チップ
１１……電極基板
１０、１２、２１……異方性導電接着剤
２０……ＬＥＤ素子
 

Claims (6)

  1. 　導電粒子と、接着バインダーとを含有し、
    　発光光の最大強度であるピークが、波長が３６０ｎｍ以上５００ｎｍ以下の範囲内に位置するＬＥＤ素子を電極基板に接着させ、前記ＬＥＤ素子の電極と前記電極基板の電極とを電気接続させる異方性導電接着剤であって、
    　前記導電粒子は、樹脂粒子と、前記樹脂粒子表面に電解メッキ法で形成された下地層と、前記下地層表面にスパッタリング法で形成され、Ａｇ、Ｂｉ、Ｎｄとを含有する導電性の光反射層とを有し、
    　前記光反射層は、Ａｇ、Ｂｉ、Ｎｄの合計重量を１００重量％として、Ｂｉが０．１重量％以上３．０重量％以下、Ｎｄが０．１重量％以上２．０重量％以下の範囲でＡｇとＢｉとＮｄとを含有するスパッタリングターゲットをスパッタリングして形成された異方性導電接着剤。
  2. 　前記異方性導電接着剤の硬化物の反射率が、３６０ｎｍ以上７４０ｎｍ以下の波長領域において、３０％以上である請求項１記載の異方性導電接着剤。
  3. 　前記下地層はニッケル薄膜である請求項１記載の異方性導電接着剤。
  4. 　加熱硬化絶縁性の前記接着バインダー１００重量部に対して、
    　前記導電粒子を１重量部以上１００重量部以下の範囲で含有する請求項１記載の異方性導電接着剤。
  5. 　発光光の最大強度であるピークが、波長が３６０ｎｍ以上５００ｎｍ以下の範囲内に位置するＬＥＤ素子と、基板とが、接着剤に導電粒子が含有された異方性導電接着剤で接着された発光装置であって、
    　前記導電粒子は、樹脂粒子と、前記樹脂粒子表面に電解メッキ法で形成された下地層と、前記下地層表面にスパッタリング法で形成され、Ａｇ、Ｂｉ、Ｎｄとを含有する導電性の光反射層とを有し、
    　前記光反射層は、Ａｇ、Ｂｉ、Ｎｄの合計重量を１００重量％として、Ｂｉが０．１重量％以上３．０重量％以下、Ｎｄが０．１重量％以上２．０重量％以下の範囲でＡｇとＢｉとＮｄとを含有するスパッタリングターゲットをスパッタリングして形成された発光装置。
  6. 　導電性粒子を接着剤に分散させて異方性導電接着剤を製造する異方性導電接着剤の製造方法であって、
    　前記異方性導電接着剤は、
    　樹脂粒子の表面に電解メッキ法によって下地層を形成し、
    　Ａｇ、Ｂｉ、Ｎｄの合計重量を１００重量％として、Ｂｉが０．１重量％以上３．０重量％以下、Ｎｄが０．１重量％以上２．０重量％以下の範囲でＡｇとＢｉとＮｄとを含有するスパッタリングターゲットをスパッタリングして前記下地層の表面に光反射層を形成して前記導電粒子を形成する異方性導電接着剤の製造方法。
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Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5617210B2 (ja) * 2009-09-14 2014-11-05 デクセリアルズ株式会社 光反射性異方性導電接着剤及び発光装置
JP6084592B2 (ja) * 2014-08-05 2017-02-22 株式会社アイエスシーＩｓｃ Ｃｏ．， Ｌｔｄ． ポゴピン用プローブ部材
KR20160046977A (ko) * 2014-10-20 2016-05-02 삼성디스플레이 주식회사 이방성 도전입자
CN107408616A (zh) * 2015-03-18 2017-11-28 迪睿合株式会社 发光装置制造方法
DE102015112967A1 (de) * 2015-08-06 2017-02-09 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
US10823355B2 (en) * 2016-01-27 2020-11-03 Lite-On Electronics (Guangzhou) Limited Light-emitting module for vehicle lamp
TWM521008U (zh) * 2016-01-27 2016-05-01 Lite On Technology Corp 車燈裝置及其發光模組
JP6332330B2 (ja) * 2016-05-20 2018-05-30 日亜化学工業株式会社 配線基体の製造方法及びそれを用いた発光装置の製造方法並びに配線基体及びそれを用いた発光装置。
KR102593532B1 (ko) * 2016-06-03 2023-10-26 삼성디스플레이 주식회사 이방성 도전 필름 및 이를 이용한 디스플레이 장치
KR102555383B1 (ko) * 2016-12-07 2023-07-12 엘지디스플레이 주식회사 유기발광소자를 이용한 조명장치 및 그 제조방법
CN111048656B (zh) * 2017-09-04 2024-06-14 首尔半导体株式会社 显示装置及该显示装置的制造方法
EP3460861B1 (en) * 2017-09-21 2023-03-01 InnoLux Corporation Display device
US11257987B2 (en) * 2017-10-16 2022-02-22 PlayNitride Inc. Structure with micro light-emitting device
TWI650854B (zh) * 2017-10-31 2019-02-11 英屬開曼群島商錼創科技股份有限公司 微型發光二極體顯示面板及其製造方法
CN109728022B (zh) * 2017-10-31 2023-06-20 英属开曼群岛商錼创科技股份有限公司 微型发光二极管显示面板及其制造方法
TWI706554B (zh) * 2017-12-13 2020-10-01 友達光電股份有限公司 畫素陣列基板及其製造方法
JP7185252B2 (ja) 2018-01-31 2022-12-07 三国電子有限会社 接続構造体の作製方法
JP7046351B2 (ja) 2018-01-31 2022-04-04 三国電子有限会社 接続構造体の作製方法
JP7160302B2 (ja) 2018-01-31 2022-10-25 三国電子有限会社 接続構造体および接続構造体の作製方法
TWI671921B (zh) 2018-09-14 2019-09-11 頎邦科技股份有限公司 晶片封裝構造及其晶片
CN111048499B (zh) * 2019-12-16 2022-05-13 业成科技（成都）有限公司 微发光二极管显示面板及其制备方法
JP7425618B2 (ja) 2020-02-10 2024-01-31 アオイ電子株式会社 発光装置の製造方法、および発光装置
JP7432470B2 (ja) * 2020-08-27 2024-02-16 太陽誘電株式会社 電子部品、回路基板および電子部品の製造方法
CN112838079B (zh) * 2020-12-31 2022-06-10 湖北长江新型显示产业创新中心有限公司 显示模组及其制作方法
EP4099807A1 (en) * 2021-06-01 2022-12-07 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Component carrier interconnection and manufacturing method
KR102448823B1 (ko) * 2022-01-12 2022-09-29 주식회사 엠시스 프리코팅된 COF(Chip on film) 제조방법 및 이 제조 방법에 의하여 제조된 COF 구조

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152464A (ja) 1991-11-25 1993-06-18 Sumitomo Bakelite Co Ltd 光半導体封止用エポキシ樹脂組成物
JP2003013021A (ja) * 2001-04-27 2003-01-15 Asahi Kasei Corp 異方性を有する導電性接着シートおよびその製造方法
JP2003026763A (ja) 2001-07-13 2003-01-29 New Japan Chem Co Ltd エポキシ樹脂組成物
JP2005120375A (ja) 2003-10-14 2005-05-12 Bayer Ag 精製されたエラストマーの製造方法、及び精製されたエラストマー、及び前記のエラストマーから得られる製品
JP2008266671A (ja) 2007-04-16 2008-11-06 Sony Corp 銀系薄膜合金
JP2010129472A (ja) * 2008-11-28 2010-06-10 Fujitsu Ltd 導電性粒子、異方性導電性接着剤、導電性粒子の製造方法
JP2011065958A (ja) * 2009-09-18 2011-03-31 Sharp Corp 異方性導電膜、およびその製造方法
JP2012178400A (ja) * 2011-02-25 2012-09-13 Toyoda Gosei Co Ltd Ｌｅｄランプ

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3541777B2 (ja) * 2000-03-15 2004-07-14 ソニーケミカル株式会社 異方性導電接続材料
JP4922916B2 (ja) * 2005-02-09 2012-04-25 積水化学工業株式会社 導電性微粒子、異方性導電材料、及び導電接続方法
JP5046890B2 (ja) * 2007-11-29 2012-10-10 株式会社コベルコ科研 Ａｇ系スパッタリングターゲット
JP5430093B2 (ja) * 2008-07-24 2014-02-26 デクセリアルズ株式会社 導電性粒子、異方性導電フィルム、及び接合体、並びに、接続方法
JP2010225572A (ja) * 2008-11-10 2010-10-07 Kobe Steel Ltd 有機ｅｌディスプレイ用の反射アノード電極および配線膜
CN101760147A (zh) * 2009-08-22 2010-06-30 漳立冰 一种溶剂型各向异性纳米导电胶及其制造方法
JP5682165B2 (ja) * 2010-07-23 2015-03-11 セイコーエプソン株式会社 干渉フィルター、光モジュール、及び分析装置
JP2012174800A (ja) 2011-02-18 2012-09-10 Sony Corp 半導体装置、製造装置、及び製造方法
JP2012209148A (ja) * 2011-03-30 2012-10-25 Sony Corp 導電性粒子、導電性ペースト、及び、回路基板
JP5916334B2 (ja) * 2011-10-07 2016-05-11 デクセリアルズ株式会社 異方性導電接着剤及びその製造方法、発光装置及びその製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152464A (ja) 1991-11-25 1993-06-18 Sumitomo Bakelite Co Ltd 光半導体封止用エポキシ樹脂組成物
JP2003013021A (ja) * 2001-04-27 2003-01-15 Asahi Kasei Corp 異方性を有する導電性接着シートおよびその製造方法
JP2003026763A (ja) 2001-07-13 2003-01-29 New Japan Chem Co Ltd エポキシ樹脂組成物
JP2005120375A (ja) 2003-10-14 2005-05-12 Bayer Ag 精製されたエラストマーの製造方法、及び精製されたエラストマー、及び前記のエラストマーから得られる製品
JP2008266671A (ja) 2007-04-16 2008-11-06 Sony Corp 銀系薄膜合金
JP2010129472A (ja) * 2008-11-28 2010-06-10 Fujitsu Ltd 導電性粒子、異方性導電性接着剤、導電性粒子の製造方法
JP2011065958A (ja) * 2009-09-18 2011-03-31 Sharp Corp 異方性導電膜、およびその製造方法
JP2012178400A (ja) * 2011-02-25 2012-09-13 Toyoda Gosei Co Ltd Ｌｅｄランプ

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US20150353781A1 (en) 2015-12-10
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