WO2013179553A1 - 金属水酸化物の製造方法及びitoスパッタリングターゲットの製造方法 - Google Patents
金属水酸化物の製造方法及びitoスパッタリングターゲットの製造方法 Download PDFInfo
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- WO2013179553A1 WO2013179553A1 PCT/JP2013/002568 JP2013002568W WO2013179553A1 WO 2013179553 A1 WO2013179553 A1 WO 2013179553A1 JP 2013002568 W JP2013002568 W JP 2013002568W WO 2013179553 A1 WO2013179553 A1 WO 2013179553A1
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- gas diffusion
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- indium
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- metal hydroxide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
- C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B9/00—Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
- C25B9/17—Cells comprising dimensionally-stable non-movable electrodes; Assemblies of constructional parts thereof
- C25B9/19—Cells comprising dimensionally-stable non-movable electrodes; Assemblies of constructional parts thereof with diaphragms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3491—Manufacturing of targets
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
Definitions
- the present invention relates to a method for producing a metal hydroxide and a method for producing an ITO sputtering target, and more particularly, to a method for producing a metal hydroxide used for producing an ITO target.
- a transparent conductive film as an indium tin oxide (hereinafter referred to as “ITO”) film is used as an electrode.
- ITO indium tin oxide
- a sputtering apparatus is widely used in consideration of mass productivity, and as this kind of sputtering apparatus, there is an apparatus that forms an ITO film by applying high-frequency power to an ITO target (for example, , See Patent Document 1).
- Patent Document 2 A method for producing such an ITO target is known from Patent Document 2, for example.
- an electrolytic solution is stored in an electrolytic cell, indium as an anode and a cathode (for example, iron) are immersed in the electrolytic solution, and a voltage is applied between the electrodes to perform electrolysis.
- Indium hydroxide is deposited.
- the precipitated indium hydroxide is recovered, the recovered one is fired to obtain an indium oxide powder, the indium oxide powder is mixed with a tin oxide powder at a predetermined ratio, and the mixed powder is pulverized and granulated,
- An ITO target is obtained by pressure molding and sintering the pressure molded material.
- indium contained in the ITO target is a rare metal that is scarce and expensive in terms of resources, and it is important to reduce the manufacturing cost of the ITO target.
- the electrolytic solution after use does not contain impurities and the composition thereof does not change.
- ammonium nitrate is used as the electrolytic solution, it is necessary to maintain a constant concentration of nitrate ions and the like in the electrolytic solution before and after electrolysis.
- the standard electrode potential (+0.01 V) of the nitrate ion reduction reaction (NO 3 ⁇ + 2H + + 2e ⁇ ⁇ NO 2 ⁇ + H 2 O) is the standard electrode potential of the water reduction reaction (+0.01 V). Therefore, in the cathode of the above conventional example, the reduction reaction of nitrate ions is more likely to occur than the reduction reaction of water, and the concentration of nitrate ions is reduced during electrolysis and the concentration of nitrite ions is reduced. To increase. For this reason, the composition of the electrolytic solution changes, and the electrolytic solution after electrolysis contains nitrite ions as impurities. Such electrolytic solution cannot be reused and waste liquid treatment is performed, which requires cost for waste liquid treatment and cannot reduce the manufacturing cost, and also requires replacement work of the electrolytic solution for mass production. There is a problem that the performance is significantly impaired.
- the pH and temperature of the electrolytic solution become unstable.
- the particle size of the metal hydroxide is easily affected by the pH and temperature of the electrolytic solution.
- the pH of the electrolytic solution is low or the temperature is high, the particle size becomes large, and the metal hydroxide has a desired particle size. There is also a problem that it is difficult to obtain.
- the present invention eliminates the need for waste solution treatment of an electrolytic solution, and provides a mass-productive metal hydroxide production method capable of obtaining a metal hydroxide having a desired particle size and It is an object of the present invention to provide a method for manufacturing an ITO sputtering target.
- the metal hydroxide production method of the present invention includes a gas diffusion electrode configured by laminating a hydrophobic gas diffusion layer and a hydrophilic reaction layer in an electrolytic cell.
- the electrolytic cell is partitioned, the electrolytic solution is stored in a portion facing the reaction layer of the partitioned electrolytic cell, a metal material or a conductive metal oxide is immersed in the electrolytic solution, and the gas diffusion electrode A cathode, a metal material or a conductive metal oxide is used as an anode, a voltage is applied between both electrodes, and oxygen is supplied to the portion facing the gas diffusion layer of the partitioned electrolytic cell for electrolysis, in the electrolyte solution. It is characterized by depositing a metal hydroxide.
- the case where the metal material is indium, the electrolytic solution is ammonium nitrate, and indium hydroxide is deposited will be described as an example.
- Indium ions (In 3+ ) are eluted from the anode during electrolysis, The ions react with the hydroxide ions in the electrolytic solution to deposit indium hydroxide.
- oxygen is supplied to the reaction layer through the gas diffusion layer, and a gas-liquid interface between oxygen and the electrolyte is generated inside the reaction layer, and oxygen is reduced at this gas-liquid interface.
- hydroxide ions are formed (O 2 + 2H 2 O + 4e ⁇ ⁇ 4OH ⁇ ).
- the nitrate ion reduction reaction Since the standard electrode potential (+0.40 V) of this oxygen reduction reaction is higher than the standard electrode potential (+0.01 V) of nitrate ion reduction reaction, the nitrate ion reduction reaction hardly occurs at the cathode, and the electrolyte solution The composition does not change. For this reason, if the precipitated indium hydroxide is recovered, the electrolyte remaining after recovery can be reused for the next electrolysis, eliminating the need for waste solution treatment or replacement of the electrolyte after electrolysis. It can be reduced and high mass productivity can be achieved. In addition, since the hydroxide ions used for the synthesis of indium hydroxide are replenished from the cathode into the electrolyte, the composition of the electrolyte does not change.
- the pH and temperature can be stabilized, and a metal hydroxide having a desired particle size can be obtained.
- the standard electrode potential ( ⁇ 0.83 V) for the reduction reaction of water is further lower than the standard electrode potential for the reduction reaction of nitrate ions, hydrogen is not generated at the cathode due to the reduction of water.
- oxygen is supplied to the portion facing the gas diffusion layer not only when the oxygen-containing gas is positively supplied to the portion through the gas supply pipe but also the gas diffusion layer of the gas diffusion electrode is exposed to the atmosphere.
- oxygen is always supplied to the gas-liquid interface formed in the reaction layer upon exposure to water.
- the present invention is suitable when indium is used as the metal material and ammonium nitrate is used as the electrolytic solution.
- the manufacturing method of the ITO sputtering target of this invention manufactures an ITO sputtering target using the indium hydroxide obtained by the manufacturing method of the said metal hydroxide. According to this, a high-density ITO sputtering target can be produced.
- the gas diffusion layer is preferably composed of hydrophobic carbon and a base material
- the reaction layer is preferably composed of hydrophilic carbon carrying a catalyst, hydrophobic carbon and a base material.
- FIG. 3A and FIG. 3B are graphs showing experimental results of the present invention.
- EM is an electrolysis apparatus used in the present embodiment, and electrolysis apparatus EM includes an electrolytic cell 1.
- the electrolytic cell 1 is composed of an air tank 10 and a precipitation tank 11.
- the air tank 10 and the sedimentation tank 11 are open at the upper surface and one side surface, and flange portions 10a and 11a are formed around the one side surface.
- Packings 10b and 11b are fitted in the concave grooves formed in the flange portions 10a and 11a so that the electrolytic solution can be sealed with the holding plate 21 described later.
- a cathode 2 is installed in the electrolytic cell 1, and the inside of the electrolytic cell 1 is partitioned by the cathode 2.
- the cathode 2 includes a gas diffusion electrode 20 and two titanium holding plates 21 that sandwich the gas diffusion electrode 20.
- the holding plate 21 serves to efficiently energize the gas diffusion electrode 20.
- the gas diffusion electrode 20 is formed by laminating a hydrophobic gas diffusion layer 20a and a hydrophilic reaction layer 20b.
- the gas diffusion layer 20a is composed of hydrophobic carbon and PTFE (fluorine resin) as a base material
- the reaction layer 20b is hydrophilic carbon and hydrophobic carbon carrying a catalyst made of platinum or silver.
- PTFE as a base material can be used.
- Each holding plate 21 is formed with a recess 21a having an outer shape substantially matching the contour of the gas diffusion electrode 20 and having a depth approximately half the thickness of the entire gas diffusion electrode 20.
- the diffusion electrode 20 is fitted. Referring also to FIG. 2, through-holes 10 c formed in the flange portion 10 a of the air tank 10, the holding plate 21, and the flange portion 11 a of the sedimentation tank 11, with the gas diffusion electrode 20 held between both holding plates 21, The gas diffusion electrode 20 is positioned and held in the electrolytic cell 1 by aligning 21c and 11c, inserting bolts into these through holes 10c, 21c, and 11c and tightening them with nuts.
- Each holding plate 21 is provided with an opening 21b that communicates with the recess 21a and is slightly smaller than the recess 21a.
- the gas diffusion layer 20a faces the air tank 10 through each opening 21b
- the reaction layer 20b faces the precipitation tank 11.
- the tip of the gas supply pipe 3 is inserted into the air tank 10, and air (oxygen-containing gas) pressurized to a predetermined pressure can be introduced into the air tank 10, and this air is further introduced into the gas diffusion layer of the gas diffusion electrode 20. 20a can be supplied.
- the electrolytic solution S is collected in the precipitation tank 11, and the metal material 4 as an anode is immersed in the electrolytic solution S.
- the metal material 4 at least one metal selected from indium, tin, copper, gallium, zinc, aluminum, iron, nickel, manganese and lithium, or an alloy containing at least one selected from these metals is used. Can be used.
- the electrolytic solution S at least one selected from ammonium nitrate, ammonium chloride, ammonium sulfate, ammonium acetate, sodium sulfate, sodium chloride, potassium chloride, potassium nitrate, and potassium sulfate can be used.
- the amount of impurities (nitrogen) contained in the deposited metal hydroxide can be reduced, and that the impurities can be easily removed by heat treatment at a relatively low temperature, it is possible to use ammonium nitrate.
- the pH and temperature (electrolysis temperature) of the electrolytic solution S can be set as appropriate so that the metal hydroxide precipitates efficiently. If the electrolysis temperature is set to room temperature, the temperature control means for the electrolyte S is not necessary, which is preferable from the viewpoint of apparatus cost.
- the electrolyzer EM further includes a DC power source 5 so that a predetermined voltage can be applied between the gas diffusion electrode 20 as a cathode and the metal material 4 as an anode.
- the applied voltage can be appropriately set so as to have a predetermined current density (for example, 2.5 A / dm 2 ).
- a predetermined current density for example, 2.5 A / dm 2 .
- the applied voltage can be set within a range of 2.5 to 3.0V.
- ammonium chloride or ammonium sulfate is used as the electrolyte S
- the applied voltage can be set within the range of 1.5 to 2.0V.
- ammonium acetate is used as the electrolyte solution S
- the applied voltage can be set within the range of 4.5 to 5.0V.
- the electrolytic device EM is used, the electrolytic solution S is ammonium nitrate, the metal material 4 is indium, and air is supplied from the gas supply pipe 3 into the air tank 10. An example in which indium hydroxide is precipitated by electrolysis will be described.
- the gas diffusion electrode 20 is installed in the electrolytic cell 1 by assembling the air tank 10, the cathode 2, and the precipitation tank 11 using a plurality of bolts as described above.
- the electrolytic solution S is accommodated in the precipitation tank 11 partitioned by the gas diffusion electrode 20 (cathode 2), and indium 4 is immersed in the electrolytic solution S.
- the gas diffusion electrode 20 is a cathode and the indium 4 is a positive electrode, and a voltage is applied from the power source 5 between both electrodes, indium ions (In 3+ ) are eluted from the indium 4 into the electrolyte solution S.
- the eluted indium ions react with hydroxide ions in the electrolytic solution S to deposit indium hydroxide (In (OH) 3 ), and the precipitated indium hydroxide precipitates at the bottom of the precipitation tank 11.
- oxygen is supplied to the reaction layer 20b through the gas diffusion layer 20a by introducing air from the gas supply pipe 3 into the air tank 10.
- a gas-liquid interface is formed inside the reaction layer 20 b, an oxygen reduction reaction occurs at the gas-liquid interface, and hydroxide ions are supplied into the electrolytic solution S.
- the standard electrode potential of the oxygen reduction reaction is higher than the standard electrode potential of the nitrate ion reduction reaction, the nitrate ion reduction reaction hardly occurs at the cathode, so the composition of the electrolyte solution (nitrate ion or ammonium ion (Concentration) is substantially constant, and nitrite ions are not included as impurities.
- the electrolyte remaining after recovery can be reused for the next electrolysis, eliminating the need for waste liquid treatment of used electrolyte and replacement of electrolyte. Cost can be reduced and high mass productivity can be achieved.
- hydroxide ions are consumed by the synthesis of indium hydroxide, since the consumed hydroxide ions are replenished by the reduction reaction of oxygen, coupled with the fact that the composition does not change, The pH and temperature of the electrolytic solution S during electrolysis can be stabilized, and indium hydroxide having a desired particle size (for example, 100 nm) can be obtained.
- the obtained indium hydroxide is used as a material, a high-density ITO sputtering target can be produced.
- the indium hydroxide obtained above is baked to form indium oxide, this indium oxide is pulverized and mixed with the tin oxide powder, and the mixed powder is molded and then sintered, whereby an ITO sputtering target is manufactured.
- various conditions such as firing, mixed molding, and sintering can be used, detailed description is omitted.
- the following experiment was performed using the electrolyzer EM. That is, in the inventive experiment, a gas diffusion electrode (permelec electrode Co., Ltd.) having a size of 10 cm ⁇ 10 cm and a thickness of 0.5 mm was used as the cathode, and ammonium nitrate having a concentration of 1 mol / l and pH 5 was used as the electrolyte S.
- the temperature of the electrolytic solution S is 20 ° C.
- a voltage of 2.5 V is applied from the power source 5 (current density is 2.5 A / dm 2 at this time)
- electrolysis is performed for 5 hours
- indium hydroxide is used.
- the concentrations of nitrate ion, nitrite ion, and ammonium ion contained in the electrolyte solution S were measured.
- the measurement results are shown in FIG. “C” on the horizontal axis in FIG. 3A is current (A) ⁇ time (sec).
- the concentration of each ion is substantially constant, the composition of the electrolytic solution S is not changed, and no nitrite ions that are impurities are generated, so that the electrolytic solution S after electrolysis can be reused.
- the composition of the electrolytic solution S did not change even when the electrolytic solution S was reused 10 times of electrolysis (once for 5 hours).
- the temperature of the electrolytic solution S is set to 25 ° C. and 30 ° C.
- electrolysis is performed under the same conditions as described above, and the concentration of the ions is measured. As a result, there is no change in the composition of the electrolytic solution S. Was confirmed.
- the present invention is not limited to the above embodiment.
- the case where air is supplied from the gas supply pipe 3 to the air tank 10 has been described.
- oxygen can be supplied to the reaction layer 20b of the gas diffusion electrode 20.
- ammonium nitrate was used as the electrolyte solution S
- the particle size of a metal hydroxide may be large, for example, ammonium chloride illustrated above, ammonium sulfate, ammonium acetate, etc. are used. Can be used.
- chlorine, sulfur, carbon, etc. are mixed as impurities in the deposited metal hydroxide, and in order to remove these impurities, it is necessary to perform a heat treatment at a higher temperature than in the case of removing nitrogen.
- the electrolyte solution can be reused.
- the present invention can naturally be applied to the case where a metal or an alloy capable of forming the metal hydroxide exemplified above is used.
- a conductive metal oxide was immersed in the electrolyte solution S, and this immersed conductive metal oxide was used as an anode. Also good.
- a diaphragm may be provided between the anode and the cathode so that desired ions eluted from the conductive metal oxide can pass through the diaphragm to the cathode side.
- ITO, IGZO, etc. can be used as a conductive metal oxide.
- SYMBOLS 1 Electrolytic cell, 2 ... Cathode, 20 ... Gas diffusion electrode, 20a ... Gas diffusion layer, 20b ... Reaction layer, S ... Electrolyte solution, 4 ... Indium (anode, metal material).
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Abstract
Description
Claims (3)
- 電解槽内に、疎水性のガス拡散層と親水性の反応層とを積層して構成されるガス拡散電極を設置してこの電解槽内を区画し、この区画された電解槽の反応層に面する部分に電解液を収納し、この電解液中に金属材料又は導電性金属酸化物を浸漬し、
ガス拡散電極を陰極、金属材料又は導電性金属酸化物を陽極として両電極間に電圧を印加すると共に、区画された電解槽のガス拡散層に面する部分に酸素を供給して電解し、電解液中に金属水酸化物を析出させることを特徴とする金属水酸化物の製造方法。 - 前記金属材料としてインジウムを用い、前記電解液として硝酸アンモニウムを用いることを特徴とする請求項1記載の金属水酸化物の製造方法。
- 請求項2記載の金属水酸化物の製造方法により製造された水酸化インジウムを用いてITOスパッタリングターゲットを製造することを特徴とするITOスパッタリングターゲットの製造方法。
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JP2014518242A JPWO2013179553A1 (ja) | 2012-05-31 | 2013-04-16 | 金属水酸化物の製造方法及びitoスパッタリングターゲットの製造方法 |
US14/394,662 US20150200082A1 (en) | 2012-05-31 | 2013-04-16 | Method of manufacturing metal hydroxides and method of manufacturing ito sputtering target |
KR1020147034107A KR20150013244A (ko) | 2012-05-31 | 2013-04-16 | 금속 수산화물의 제조방법 및 ito 스퍼터링 타깃의 제조방법 |
CN201380026827.3A CN104334771A (zh) | 2012-05-31 | 2013-04-16 | 金属氢氧化物的制造方法及ito溅射靶的制造方法 |
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Cited By (5)
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WO2015114886A1 (ja) * | 2014-01-29 | 2015-08-06 | 住友金属鉱山株式会社 | 水酸化インジウム粉の製造方法及び陰極 |
JP2016113690A (ja) * | 2014-12-17 | 2016-06-23 | 住友金属鉱山株式会社 | 電解装置、水酸化インジウム粉の製造方法、及びスパッタリングターゲットの製造方法 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60221326A (ja) * | 1984-04-13 | 1985-11-06 | Japan Metals & Chem Co Ltd | 金属酸化物の製造法 |
JPH0692711A (ja) * | 1992-09-10 | 1994-04-05 | Tanaka Kikinzoku Kogyo Kk | セラミックス体の製造方法 |
JPH10204669A (ja) * | 1997-01-16 | 1998-08-04 | Mitsubishi Materials Corp | 酸化インジウム粉末の製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4067788A (en) * | 1976-09-20 | 1978-01-10 | Electromedia, Inc. | Electrochemical production of finely divided metal oxides, metal hydroxides and metals |
US4597957A (en) * | 1984-03-06 | 1986-07-01 | Japan Metals And Chemicals Co., Ltd. | Process for electrolytically producing metallic oxide for ferrite |
US4615954A (en) * | 1984-09-27 | 1986-10-07 | Eltech Systems Corporation | Fast response, high rate, gas diffusion electrode and method of making same |
US5234768A (en) * | 1988-02-10 | 1993-08-10 | Tanaka Kikinzoku Kogyo K.K. | Gas permeable member |
US5246551A (en) * | 1992-02-11 | 1993-09-21 | Chemetics International Company Ltd. | Electrochemical methods for production of alkali metal hydroxides without the co-production of chlorine |
JP2829556B2 (ja) * | 1992-12-09 | 1998-11-25 | 株式会社ジャパンエナジー | 酸化インジウム粉末の製造方法 |
US5417816A (en) * | 1992-12-09 | 1995-05-23 | Nikko Kyodo, Ltd. | Process for preparation of indium oxide-tin oxide powder |
JP2736498B2 (ja) * | 1993-05-26 | 1998-04-02 | 株式会社ジャパンエナジー | 酸化インジウム−酸化スズ粉末の製造方法 |
US6733639B2 (en) * | 2000-11-13 | 2004-05-11 | Akzo Nobel N.V. | Electrode |
JP2003145161A (ja) * | 2001-06-25 | 2003-05-20 | Kurita Water Ind Ltd | 水処理装置及び水処理方法 |
JP5043027B2 (ja) * | 2006-10-24 | 2012-10-10 | Jx日鉱日石金属株式会社 | Itoスクラップからの有価金属の回収方法 |
JP4210713B2 (ja) * | 2007-02-16 | 2009-01-21 | 日鉱金属株式会社 | 導電性のある酸化物を含有するスクラップからの有価金属の回収方法 |
-
2013
- 2013-04-16 WO PCT/JP2013/002568 patent/WO2013179553A1/ja active Application Filing
- 2013-04-16 CN CN201380026827.3A patent/CN104334771A/zh active Pending
- 2013-04-16 US US14/394,662 patent/US20150200082A1/en not_active Abandoned
- 2013-04-16 JP JP2014518242A patent/JPWO2013179553A1/ja active Pending
- 2013-04-16 KR KR1020147034107A patent/KR20150013244A/ko not_active Application Discontinuation
- 2013-05-02 TW TW102115696A patent/TWI507361B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60221326A (ja) * | 1984-04-13 | 1985-11-06 | Japan Metals & Chem Co Ltd | 金属酸化物の製造法 |
JPH0692711A (ja) * | 1992-09-10 | 1994-04-05 | Tanaka Kikinzoku Kogyo Kk | セラミックス体の製造方法 |
JPH10204669A (ja) * | 1997-01-16 | 1998-08-04 | Mitsubishi Materials Corp | 酸化インジウム粉末の製造方法 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015114886A1 (ja) * | 2014-01-29 | 2015-08-06 | 住友金属鉱山株式会社 | 水酸化インジウム粉の製造方法及び陰極 |
JP2016113690A (ja) * | 2014-12-17 | 2016-06-23 | 住友金属鉱山株式会社 | 電解装置、水酸化インジウム粉の製造方法、及びスパッタリングターゲットの製造方法 |
EP3042981A1 (en) * | 2015-01-09 | 2016-07-13 | Vito NV | An electrochemical process for preparing a compound comprising a metal or metalloid and a peroxide, ionic or radical species |
WO2016110597A1 (en) * | 2015-01-09 | 2016-07-14 | Vito Nv | An electrochemical process for preparing a compound comprising a metal or metalloid and a peroxide, ionic or radical species |
CN107532309A (zh) * | 2015-01-09 | 2018-01-02 | 威拓股份有限公司 | 用于制备含金属离子或准金属的化合物和过氧根、离子或自由基物质的电化学方法 |
JP2018508659A (ja) * | 2015-01-09 | 2018-03-29 | フィト エヌフェー | 金属又は半金属及び過酸化物、イオン種又はラジカル種を含む化合物を調製するための電気化学的方法 |
JP2020041209A (ja) * | 2018-09-13 | 2020-03-19 | 株式会社アルバック | 金属水酸化物の製造装置及び製造方法 |
JP7152228B2 (ja) | 2018-09-13 | 2022-10-12 | 株式会社アルバック | 金属水酸化物の製造装置及び製造方法 |
JP2020059872A (ja) * | 2018-10-05 | 2020-04-16 | 株式会社アルバック | 金属水酸化物の製造装置及び製造方法 |
JP7128075B2 (ja) | 2018-10-05 | 2022-08-30 | 株式会社アルバック | 金属水酸化物の製造装置及び製造方法 |
Also Published As
Publication number | Publication date |
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US20150200082A1 (en) | 2015-07-16 |
CN104334771A (zh) | 2015-02-04 |
TWI507361B (zh) | 2015-11-11 |
JPWO2013179553A1 (ja) | 2016-01-18 |
KR20150013244A (ko) | 2015-02-04 |
TW201406660A (zh) | 2014-02-16 |
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