WO2013099947A1 - Appareil de conversion photoélectrique - Google Patents

Appareil de conversion photoélectrique Download PDF

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Publication number
WO2013099947A1
WO2013099947A1 PCT/JP2012/083656 JP2012083656W WO2013099947A1 WO 2013099947 A1 WO2013099947 A1 WO 2013099947A1 JP 2012083656 W JP2012083656 W JP 2012083656W WO 2013099947 A1 WO2013099947 A1 WO 2013099947A1
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photoelectric conversion
layer
electrode layer
concentration
sodium
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PCT/JP2012/083656
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English (en)
Japanese (ja)
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誠司 小栗
塁 鎌田
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京セラ株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Definitions

  • the present invention relates to a photoelectric conversion device.
  • a photoelectric conversion device used for solar power generation or the like there is one in which a plurality of photoelectric conversion elements are provided on a glass substrate.
  • a lower electrode layer, a semiconductor layer, and a transparent electrode layer are laminated in this order.
  • the light transmitted through the transparent electrode layer is irradiated to the semiconductor layer, and thereby the electric charges generated by the photoelectric conversion in the semiconductor layer are taken out by the lower electrode layer and the transparent electrode layer.
  • a chalcopyrite compound semiconductor of the I-III-VI group is used for such a semiconductor layer.
  • One of the objects of the present invention is to provide a photoelectric conversion device with high photoelectric conversion efficiency by reducing the contact resistance between the semiconductor layer and the lower electrode layer.
  • a photoelectric conversion device includes an electrode layer, a first semiconductor layer including a group I-III-VI chalcopyrite compound semiconductor, potassium and sodium, disposed on the electrode layer, And a second semiconductor layer disposed on the first semiconductor layer and forming a pn junction with the first semiconductor layer.
  • the concentration of potassium in the contact portion with the electrode layer is higher than the concentration of sodium in the contact portion with the electrode layer.
  • the action of sodium that affects the ohmic contact between the first semiconductor layer and the electrode layer is alleviated by potassium.
  • the contact resistance between the first semiconductor layer and the electrode layer is reduced.
  • the photoelectric conversion efficiency is improved.
  • FIG. 2 is a diagram showing an XZ cross section at a position indicated by a one-dot chain line II-II in FIG. It is a figure which expands and shows the vicinity of the light absorption layer of FIG. 2 partially. It is a flowchart which shows the manufacturing flow of a photoelectric conversion apparatus.
  • 1 to 3 have a right-handed XYZ coordinate system in which the arrangement direction of photoelectric conversion cells 10 (the horizontal direction in the drawing in FIG. 1) is the X-axis direction.
  • the photoelectric conversion device 100 includes a substrate 1 and a plurality of photoelectric conversion cells 10 arranged in a plane on the substrate 1. Adjacent photoelectric conversion cells 10 are separated by a groove P3. In FIG. 1 and FIG. 2, only a part of the two photoelectric conversion cells 10 is shown for convenience of illustration.
  • a predetermined number of photoelectric conversion cells 10 can be arranged in a plane in the left-right direction of the drawing. Here, the predetermined number may be 8, for example.
  • electrodes for obtaining a voltage and a current by power generation can be arranged at both ends in the X-axis direction of the photoelectric conversion device 100.
  • a large number of photoelectric conversion cells 10 may be arranged in a matrix.
  • the conversion efficiency indicates a rate at which sunlight energy is converted into electric energy in the photoelectric conversion device 100.
  • the conversion efficiency can be derived by dividing the value of the electric energy output from the photoelectric conversion device 100 by the value of the energy of sunlight incident on the photoelectric conversion device 100 and multiplying by 100.
  • Each photoelectric conversion cell 10 includes a lower electrode layer 2 as a first electrode layer, a photoelectric conversion layer 3 including a first semiconductor layer and a second semiconductor layer, an upper electrode layer 4 as a second electrode layer, and a linear conductive portion 5. It has.
  • Each photoelectric conversion cell 10 is provided with a groove part P1 and a groove part P2.
  • the main surface on the side where the upper electrode layer 4 is disposed is a light receiving surface.
  • the substrate 1 supports a plurality of photoelectric conversion cells 10.
  • a material of the substrate for example, glass, ceramics, resin, metal and the like can be adopted.
  • the substrate 1 is blue plate glass (soda lime glass) is shown.
  • substrate 1 should just be 1 mm or more and about 3 mm or less.
  • the shape of the substrate 1 may be a flat plate shape, and the main surface (also referred to as an upper surface) on the + Z side of the substrate 1 may be substantially flat.
  • the lower electrode layer 2 is a conductive layer disposed on the upper surface of the substrate 1.
  • various conductive metals such as molybdenum, aluminum, titanium, tantalum, and gold can be employed.
  • the thickness of the lower electrode layer 2 should just be 0.1 micrometer or more and about 1 micrometer or less, for example.
  • the lower electrode layer 2 can be formed by, for example, a sputtering method or an evaporation method.
  • the photoelectric conversion layer 3 is disposed on the lower electrode layer 2.
  • the photoelectric conversion layer 3 includes a light absorption layer 31 as a first semiconductor layer and a buffer layer 32 as a second semiconductor layer.
  • the light absorption layer 31 and the buffer layer 32 are laminated on the lower electrode layer 2 in this order.
  • the light absorption layer 31 is disposed on the main surface (also referred to as the upper surface) on the + Z side of the lower electrode layer 2.
  • the light absorption layer 31 mainly includes a group I-III-VI chalcopyrite compound semiconductor having the first conductivity type, and absorbs light to generate excitons.
  • the first conductivity type may be, for example, a p-type conductivity type.
  • the I-III-VI group chalcopyrite compound semiconductor is a semiconductor mainly containing an I-III-VI group compound.
  • a semiconductor mainly containing an I-III-VI group compound means that the semiconductor contains 70 mol% or more of an I-III-VI group compound.
  • “mainly included” means “70 mol% or more included”.
  • Group I-III-VI compounds mainly consist of Group IB elements (also referred to as Group 11 elements), Group III-B elements (also referred to as Group 13 elements), and Group VI-B elements (also referred to as Group 16 elements). It is a compound contained in.
  • Examples of the chalcopyrite compounds of the I-III-VI group include Cu (In, Ga) Se 2 (also referred to as CIGS), Cu (In, Ga) (Se, S) 2 (also referred to as CIGSS), and CuInSe. 2 (also referred to as CIS) or the like can be adopted.
  • Cu (In, Ga) Se 2 is a compound mainly containing Cu, In, Ga, and Se.
  • Cu (In, Ga) (Se, S) 2 is a compound mainly containing Cu, In, Ga, Se, and S.
  • the light absorption layer 31 shall mainly contain CIGS.
  • the photoelectric conversion efficiency of the photoelectric conversion cell 10 is improved even if the thickness of the light absorption layer 31 is 10 ⁇ m or less. Can be enhanced. For this reason, the thickness of the light absorption layer 31 should just be about 1 micrometer or more and about 3 micrometers or less, for example.
  • the light absorption layer 31 can be formed by a vacuum process such as sputtering or vapor deposition.
  • the light absorption layer 31 can also be formed by a process called a coating method or a printing method.
  • a coating method or a printing method for example, a solution containing a metal element mainly contained in the light absorption layer 31 is applied on the lower electrode layer 2, and then drying and heat treatment are performed.
  • a coating method or a printing method the cost required for manufacturing the photoelectric conversion device 100 can be reduced.
  • the buffer layer 32 is disposed on the main surface (also referred to as the upper surface) on the + Z side of the light absorption layer 31.
  • the buffer layer 32 mainly includes a semiconductor having a second conductivity type different from the first conductivity type of the light absorption layer 31.
  • semiconductors having different conductivity types are semiconductors having different conductive carriers.
  • the second conductivity type may be an n-type conductivity type, for example.
  • the light absorption layer 31 may be n-type and the buffer layer 32 may be p-type.
  • a heterojunction region is formed between the light absorption layer 31 and the buffer layer 32. That is, it can be said that the buffer layer 32 forms a pn junction together with the light absorption layer 31. For this reason, in the photoelectric conversion cell 10, photoelectric conversion can occur in the light absorption layer 31 and the buffer layer 32 that form the heterojunction region.
  • the buffer layer 32 mainly includes a compound semiconductor.
  • compound semiconductors included in the buffer layer 32 include CdS, In 2 S 3 , ZnS, ZnO, In 2 Se 3 , In (OH, S), (Zn, In) (Se, OH), and (Zn, Mg) O or the like can be employed. If the buffer layer 32 has a resistivity of 1 ⁇ ⁇ cm or more, the generation of leakage current can be suppressed.
  • the buffer layer 32 can be formed by, for example, a chemical bath deposition (CBD) method.
  • the buffer layer 32 has a thickness in the normal direction of the upper surface of the light absorption layer 31.
  • the thickness of the buffer layer 32 may be, for example, 10 nm or more and 200 nm or less. If the thickness of the buffer layer 32 is not less than 100 nm and not more than 200 nm, the buffer layer 32 and the light absorption layer 31 are damaged when the upper electrode layer 4 is formed on the buffer layer 32 by sputtering or the like. It becomes difficult.
  • the upper electrode layer 4 is provided on the + Z side main surface (also referred to as the upper surface) of the photoelectric conversion layer 3.
  • the upper electrode layer 4 is, for example, a transparent conductive layer (also referred to as a transparent conductive layer) having an n-type conductivity type.
  • the upper electrode layer 4 serves as an electrode for extracting charges generated in the photoelectric conversion layer 3.
  • the upper electrode layer 4 only needs to mainly contain a material having a lower resistivity than the buffer layer 32.
  • the upper electrode layer 4 may include what is called a window layer, and may include a window layer and a transparent conductive layer.
  • the upper electrode layer 4 mainly includes a transparent and low resistance material having a wide forbidden band width.
  • a transparent and low resistance material having a wide forbidden band width.
  • a material for example, ZnO, a compound of ZnO, a metal oxide semiconductor such as ITO containing Sn and SnO 2 can be adopted.
  • the ZnO compound only needs to contain any one element of Al, B, Ga, In, and F.
  • the upper electrode layer 4 can be formed by sputtering, vapor deposition, spraying, chemical vapor deposition (CVD), or the like.
  • the thickness of the upper electrode layer 4 may be about 0.1 ⁇ m or more and about 2 ⁇ m or less, for example.
  • the upper electrode layer 4 has a resistivity of less than 1 ⁇ ⁇ cm and a sheet resistance of 50 ⁇ / ⁇ or less, electric charges are favorably extracted from the photoelectric conversion layer 3 through the upper electrode layer 4. Can be.
  • the buffer layer 32 and the upper electrode layer 4 have a property of easily transmitting light with respect to light in a wavelength band that can be absorbed by the light absorption layer 31 (also referred to as light transmittance), A decrease in light absorption in the absorption layer 31 can be suppressed.
  • the thickness of the upper electrode layer 4 is 0.05 ⁇ m or more and 0.5 ⁇ m or less, the light transmittance in the upper electrode layer 4 is enhanced, and the current generated by photoelectric conversion is improved by the upper electrode layer 4. Can be transmitted.
  • the absolute refractive index of the upper electrode layer 4 and the absolute refractive index of the buffer layer 32 are substantially the same, the incident light loss caused by the reflection of light at the interface between the upper electrode layer 4 and the buffer layer 32 is reduced. Can be reduced.
  • the linear conductive portion 5 is disposed on the upper surface of the upper electrode layer 4. When a plurality of linear conductive parts 5 are provided, each linear conductive part 5 is separated in the Y-axis direction and extends in the X-axis direction.
  • the linear conductive portion 5 can be formed by, for example, applying a metal paste on the upper surface of the upper electrode layer 4 and then drying and solidifying the metal paste.
  • the metal paste can be produced, for example, by adding particles having high light reflectivity and conductivity to a binder such as a light-transmitting resin.
  • a binder such as a light-transmitting resin.
  • the resin having translucency for example, an epoxy resin or the like may be employed.
  • the linear conductive portion 5 includes a large number of conductive particles, and the large number of particles are in contact with each other, thereby ensuring good conductivity in the linear conductive portion 5. obtain.
  • the linear conductive portion 5 plays a role of collecting charges generated in the photoelectric conversion layer 3 and taken out in the upper electrode layer 4. Since the linear conductive portion 5 is arranged, the conductivity of the upper electrode layer 4 is supplemented, so that the upper electrode layer 4 can be thinned. As a result, it is possible to achieve both the securing of charge extraction efficiency and the improvement of light transmittance in the upper electrode layer 4. In addition, when the width of the linear conductive portion 5 is 50 ⁇ m or more and 400 ⁇ m or less, good conduction between the adjacent photoelectric conversion cells 10 is ensured, and a decrease in the amount of light incident on the light absorption layer 31 is suppressed. Can be done.
  • the interval in the Y direction of the plurality of linear conductive parts 5 arranged in one photoelectric conversion cell 10 may be about 2.5 mm, for example.
  • the current collector 6 includes a connecting part 6a and a hanging part 6b.
  • the connecting portion 6a extends in the Y-axis direction.
  • each linear conductive part 5 is electrically connected to the connection part 6a.
  • the drooping portion 6b is connected to the lower surface of the connecting portion 6a, and can be connected to the upper surface of the lower electrode layer 2 extending from the adjacent photoelectric conversion cell 10 through the groove portion P2.
  • the charges collected by the upper electrode layer 4 and the plurality of linear conductive portions 5 are transmitted to the adjacent photoelectric conversion cell 10 through the hanging portion 6b. Thereby, in the photoelectric conversion apparatus 100, the adjacent photoelectric conversion cells 10 are electrically connected in series.
  • the groove part P1 extends in the Y-axis direction.
  • the groove part P1 extends substantially linearly in the Y-axis direction. Since the one or more grooves P1 are arranged, the lower electrode layer 2 is separated into a plurality in the X-axis direction. In FIG. 2, two lower electrode layers 2 are shown.
  • the extending part of the light absorption layer 31 arranged immediately above is embedded in the groove part P1. Thereby, in the adjacent photoelectric conversion cell 10, the lower electrode layer 2 of one photoelectric conversion cell 10 and the lower electrode layer 2 of the other photoelectric conversion cell 10 are electrically separated.
  • the width of the groove portion P1 may be, for example, about 50 ⁇ m or more and about 400 ⁇ m or less, which is about the same as the width of the linear conductive portion 5.
  • the groove part P2 extends in the Y-axis direction.
  • the groove part P2 extends substantially linearly in the Y-axis direction.
  • the groove portion P ⁇ b> 2 is arranged from the upper surface of the upper electrode layer 4 to the upper surface of the lower electrode layer 2. For this reason, the groove part P ⁇ b> 2 separates, in one photoelectric conversion cell 10, a stacked part in which the photoelectric conversion layer 3 and the upper electrode layer 4 are stacked in the X-axis direction.
  • the groove part P3 extends in the Y-axis direction between the adjacent photoelectric conversion cells 10.
  • the groove P3 extends substantially linearly in the Y-axis direction.
  • the groove portion P3 is arranged from the main surface (also referred to as the upper surface) on the + Z side of the photoelectric conversion cell 10 to the upper surface of the lower electrode layer 2. That is, the groove part P3 is an area that separates adjacent photoelectric conversion cells 10.
  • the width of the groove P3 may be, for example, about 40 ⁇ m or more and about 1000 ⁇ m or less.
  • an insulating material such as resin can enter each groove P3.
  • each photoelectric conversion cell 10 when each photoelectric conversion cell 10 is seen through from above the light receiving surface (here, + Z side), each photoelectric conversion cell 10 is provided with a groove portion P1, a groove portion P2, and a groove portion P3 in this order in the + X direction. ing. For this reason, in each photoelectric conversion cell 10, the photoelectric conversion layer 3 is disposed from above the lower electrode layer 2 to the upper part of the adjacent lower electrode layer 2 over the groove P ⁇ b> 1.
  • the adjacent lower electrode layer 2 is the lower electrode layer 2 extending from the adjacent photoelectric conversion cell 10.
  • each photoelectric conversion cell 10 when seen through from above the light receiving surface (here, + Z side), each photoelectric conversion cell 10 includes a groove portion P2 and is sandwiched between the groove portion P1 and the groove portion P3. And a region where the groove portion P1 is disposed and a remaining region. The remaining area is an area contributing to power generation.
  • the photoelectric conversion layer 3 is disposed from the lower electrode layer 2 to the adjacent lower electrode layer 2, but the present invention is limited to this structure. Absent.
  • the photoelectric conversion layer 3 should just be distribute
  • the light absorption layer 31 of the photoelectric conversion layer 3 contains potassium (K) and sodium (Na) in addition to the above-described group I-III-VI chalcopyrite compound semiconductor. Potassium and sodium have a function of increasing the carrier concentration of the chalcopyrite compound semiconductor of the I-III-VI group.
  • the potassium concentration in the vicinity of the contact portion with the lower electrode layer 2 (hereinafter referred to as the first contact portion 31a) is higher than the sodium concentration in the first contact portion 31a.
  • Potassium plays a role in reducing the deterioration of the ohmic contact due to sodium in the vicinity of the surface of the lower electrode layer 2. Thereby, the fall of photoelectric conversion efficiency is reduced.
  • a method of measuring by an energy dispersive X-ray analysis (EDS: Energy Dispersive X-ray Spectroscopy) while observing the cross section with an electron microscope can be used.
  • the concentration may be measured by X-ray photoelectron spectroscopy (XPS) while the light absorption layer 31 is shaved in the depth direction by sputtering or the like.
  • XPS X-ray photoelectron spectroscopy
  • measurement may be performed by Auger Electron Spectroscopy (AES) or secondary ion mass spectrometry (SIMS) while scraping the light absorption layer 31 in the depth direction by sputtering or the like.
  • AES Auger Electron Spectroscopy
  • SIMS secondary ion mass spectrometry
  • the average sodium concentration of the light absorption layer 31 may be 1 ⁇ 10 19 atoms / cm 3 or more and 1 ⁇ 10 20 atoms / cm 3 or less.
  • the average potassium concentration of the light absorption layer 31 may be 5 ⁇ 10 19 atoms / cm 3 or more and 5 ⁇ 10 20 atoms / cm 3 or less.
  • the average sodium and potassium concentrations of the light absorption layer 31 are obtained by measuring at any 10 locations in the position where the crystals of the light absorption layer 31 exist by the above-described measurement method, and obtaining the average value.
  • the crystal refers to a chalcopyrite compound semiconductor crystal.
  • the concentration of sodium and potassium in the first contact portion 31a is obtained as an average value by measuring at any 10 locations in the first contact portion 31a by the measurement method described above.
  • the 1st contact part 31a points out the contact surface which the lower electrode layer 2 and the light absorption layer 31 are contacting, and the site
  • the vicinity portion is a region where the distance from the contact surface with the lower electrode layer 2 is 10% or less with respect to the entire thickness of the light absorption layer 31.
  • the concentration of sodium in the first contact portion 31a may be 1 ⁇ 10 19 atoms / cm 3 or more and 1 ⁇ 10 20 atoms / cm 3 or less.
  • the concentration of potassium in the first contact portion 31a may be 2 ⁇ 10 19 atoms / cm 3 or more and 5 ⁇ 10 20 atoms / cm 3 or less.
  • concentration of potassium in the 1st contact part 31a should just be 1.1 times or more and about 20 times or less of the density
  • the concentration of potassium in the vicinity of the contact portion with the buffer layer 32 (hereinafter referred to as the second contact portion 31b) may be higher than the concentration of sodium in the second contact portion 31b.
  • the concentration of potassium in the second contact portion 31b On the surface of the light absorption layer 31 corresponding to the second contact portion 31 b on the buffer layer 32 side, sodium is more easily lost than potassium during the production of the light absorption layer 31. Therefore, if the potassium concentration in the second contact portion 31b is increased, the decrease in sodium can be reduced. Thereby, quality degradation of the pn junction is reduced. As a result, a decrease in photoelectric conversion efficiency is reduced.
  • the concentration of sodium in the second contact portion 31b may be 1 ⁇ 10 18 atoms / cm 3 or more and 1 ⁇ 10 20 atoms / cm 3 or less.
  • the concentration of potassium in the second contact portion 31b may be 1 ⁇ 10 19 atoms / cm 3 or more and 5 ⁇ 10 20 atoms / cm 3 or less.
  • concentration of potassium in the 2nd contact part 31b should just be 1.1 times or more and about 50 times or less than the density
  • the concentration of potassium and sodium in the second contact portion 31b is obtained as an average value by performing measurement at any 10 positions in the position where the crystal of the second contact portion 31b exists by the above-described measurement method.
  • the crystal refers to a chalcopyrite compound semiconductor crystal.
  • the second contact portion 31b refers to the contact surface where the light absorption layer 31 and the buffer layer 32 are in contact and the vicinity of the contact surface.
  • the vicinity portion is a region where the distance from the contact surface with the buffer layer 32 is 15% or less with respect to the total thickness of the light absorption layer 31.
  • the concentration of potassium in the second contact portion 31b may be smaller than the average concentration of potassium in the light absorption layer 31.
  • the concentration of potassium in the second contact portion 31b may be about 0.05 times or more and about 0.91 times or less of the average concentration of potassium in the light absorption layer 31.
  • the concentration of sodium in the second contact portion 31 b may be smaller than the average concentration of sodium in the light absorption layer 31.
  • the concentration of sodium in the second contact portion 31b may be not less than 0.05 times and not more than 0.91 times the average concentration of sodium in the light absorption layer 31.
  • FIG. 4 is a flowchart illustrating the manufacturing flow of the photoelectric conversion apparatus 100.
  • step Sp1 a substantially rectangular flat substrate 1 is prepared.
  • the lower electrode layer 2 is formed on substantially the entire main surface of the cleaned substrate 1 by using a sputtering method or a vapor deposition method.
  • a substantially straight line is formed in one direction (here, the Y-axis direction shown in FIG. 1 and the like) from a predetermined formation target position on the upper surface of the lower electrode layer 2 to the upper surface of the substrate 1 immediately below it.
  • An extending groove P1 is formed.
  • the groove part P1 can be formed by, for example, scanning a predetermined position to be formed with a YAG laser or other laser light.
  • a film containing a metal element mainly contained in the light absorption layer 31 is formed on the lower electrode layer 2.
  • the film can be formed, for example, by applying a solution containing a metal element mainly contained in the light absorption layer 31 on the lower electrode layer 2 and then drying it.
  • Step Sp4 a raw material obtained by dissolving IB group element, III-B group element, VI-B group element, NaClO 4 as a sodium source and KClO 4 as a potassium source with pyridine on the lower electrode layer 2. After applying the solution, it is dried to form a film. Further, this step Sp4 is performed a plurality of times to form a plurality of layers of the film. In Step Sp4, the amount of sodium and potassium in the film that is in direct contact with the lower electrode layer 2 is controlled by containing more potassium than sodium in the raw material solution first applied on the lower electrode layer 2. . Thereby, as for the light absorption layer 31 formed through step Sp5, the density
  • the amount of each element in the stacking direction of the light absorption layer 31 can be controlled by adjusting the amount of the element contained in the raw material solution in accordance with the film to be stacked. Therefore, when the amount of potassium in the second contact portion 31b is increased, the amount of the potassium source in the raw material solution of the film formed on the side opposite to the lower electrode layer 2 (the + Z direction side in FIG. 2) may be increased.
  • Step Sp5 the heat treatment is performed on the film, so that the crystallization of the compound semiconductor in the film proceeds and the light absorption layer 31 is formed.
  • the buffer layer 32 is formed on the light absorption layer 31.
  • the photoelectric conversion layer 3 in which the light absorption layer 31 and the buffer layer 32 are laminated is formed.
  • the buffer layer 32 can be formed by, for example, a chemical bath deposition (CBD) method.
  • CBD chemical bath deposition
  • the buffer layer 32 mainly containing CdS is formed by immersing the light absorption layer 31 in a solution prepared by dissolving cadmium acetate and thiourea in aqueous ammonia.
  • the upper electrode layer 4 is formed on the photoelectric conversion layer 3.
  • the upper electrode layer 4 can be formed by, for example, a sputtering method, a vapor deposition method, a chemical vapor deposition (CVD) method, or the like.
  • the transparent upper electrode layer 4 mainly including ZnO added with Al is formed on the buffer layer 32.
  • step Sp8 in a region extending from a predetermined formation target position to the upper surface of the lower electrode layer 2 on the upper surface of the upper electrode layer 4, a substantially straight line in one direction (here, the Y-axis direction shown in FIG. 1 and the like).
  • a groove portion P2 extending in a shape is formed.
  • the groove part P2 can be formed by mechanical scribing using a scribe needle.
  • the linear conductive portion 5 and the current collecting portion 6 are formed from a predetermined formation target position on the upper surface of the upper electrode layer 4 to the inside of the groove portion P2.
  • the linear conductive portion 5 can be formed by, for example, printing so that the metal paste has a predetermined pattern, and solidifying the printed metal paste by drying.
  • a substantially straight line extends in one direction (here, the Y-axis direction shown in FIG. 1 and the like) from the predetermined formation target position to the upper surface of the lower electrode layer 2 in the upper surface of the upper electrode layer 4.
  • a groove portion P3 extending in a shape is formed.
  • the groove part P3 can be formed, for example, by mechanical scribing using a scribe needle or the like, similarly to the groove part P2.
  • the photoelectric conversion device 100 includes the plurality of photoelectric conversion cells 10 connected in series.
  • the present invention is not limited to this.
  • the photoelectric conversion device 100 only needs to include one or more photoelectric conversion cells 10.

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'objet de la présente invention est de fournir un appareil de conversion photoélectrique doté d'un rendement de conversion photoélectrique élevé. La présente invention a trait à un appareil de conversion photoélectrique qui est équipé : d'une couche d'électrode; d'une première couche semi-conductrice, qui est disposée sur la couche d'électrode et qui contient un semi-conducteur composé de chalcopyrite I-III-VI, du potassium et du sodium; et d'une seconde couche semi-conductrice, qui est disposée sur la première couche semi-conductrice et qui forme une jonction PN avec la première couche semi-conductrice. D'autre part, dans la première couche semi-conductrice, la concentration du potassium à proximité d'une partie de contact avec la couche d'électrode est supérieure à la concentration de sodium à proximité de la partie de contact avec la couche d'électrode.
PCT/JP2012/083656 2011-12-27 2012-12-26 Appareil de conversion photoélectrique WO2013099947A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150136230A1 (en) * 2013-11-20 2015-05-21 Samsung Sdi Co., Ltd. Solar cell
WO2017043596A1 (fr) * 2015-09-11 2017-03-16 ソーラーフロンティア株式会社 Élément de conversion photoélectrique

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08222750A (ja) * 1994-12-01 1996-08-30 Siemens Ag 基板上に太陽電池を製造する方法及びカルコパイライト吸収層を有する太陽電池
JP2000058893A (ja) * 1998-07-02 2000-02-25 Internatl Solar Electric Technol Inc 酸化物に基づき、化合物半導体膜を製造し、更に関連する電子デバイスを製造する方法
JP2006147759A (ja) * 2004-11-18 2006-06-08 Honda Motor Co Ltd カルコパイライト型薄膜太陽電池の製造方法
JP2011514004A (ja) * 2008-03-11 2011-04-28 サン−ゴバン グラス フランス エス アー ソーラモジュール

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08222750A (ja) * 1994-12-01 1996-08-30 Siemens Ag 基板上に太陽電池を製造する方法及びカルコパイライト吸収層を有する太陽電池
JP2000058893A (ja) * 1998-07-02 2000-02-25 Internatl Solar Electric Technol Inc 酸化物に基づき、化合物半導体膜を製造し、更に関連する電子デバイスを製造する方法
JP2006147759A (ja) * 2004-11-18 2006-06-08 Honda Motor Co Ltd カルコパイライト型薄膜太陽電池の製造方法
JP2011514004A (ja) * 2008-03-11 2011-04-28 サン−ゴバン グラス フランス エス アー ソーラモジュール

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150136230A1 (en) * 2013-11-20 2015-05-21 Samsung Sdi Co., Ltd. Solar cell
WO2017043596A1 (fr) * 2015-09-11 2017-03-16 ソーラーフロンティア株式会社 Élément de conversion photoélectrique

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