JP5220206B2 - 光電変換装置 - Google Patents
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
本発明の一の実施形態に係る光電変換装置20は、基板1の上に複数の光電変換セル10を並設している。すなわち、このような複数の光電変換セル10は、互いに離間しつつ所定の配列方向に配列されている。図1においては図示の都合上、2つの光電変換セル10のみを示しているが、実際の光電変換装置20においては、図面左右方向、あるいはさらにこれに垂直な方向に、多数の光電変換セル10が平面的に(二次元的に)配設される。また、図1には、光電変換セル10の配列方向(図面視左右方向)をx軸方向とする右手系のxyz座標系を付している。
図3は、第1溝部P1が形成されるxy平面に、第2溝部P2と第3溝部P3との形成位置を破線にて投影した図である。また、図3には、個々の下部電極層2を区別するためのハッチングを付している。図4は、下部電極層2の形状および配置の詳細を示す図である。図5は、本実施の形態に係る光電変換装置20の上面図である。ただし、図5においては、破線にて第1溝部P1の形成位置も示している。また、図5においては5つの集電部7aを備える場合を示している。なお、集電部7aの数は、図1および図5に示された数に限定されない。
D1+D4=D2+D3 ・・・(1)
かつ
D1>D2≧D3>D4 ・・・(2)
という関係式が満たされるように、第1下部電極層2αおよび第2下部電極層2βを配置すればよい。このとき、個々の光電変換セル10のx軸方向における一方端部10aから第1溝部P1までの最大距離がD1、最小距離がD2である。また、個々の光電変換セル10のx軸方向における光電変換セル10の他方端部10bから第1溝部P1までの最大距離がD3、最小距離がD4である。なお、式(1)は、x軸方向における光電変換セル10の幅および第1溝部P1の幅が一定であることを示す要件である。
次に、上述のような構成を有する光電変換装置20の製造プロセスの一例について説明する。以降においては、I-III-VI族化合物半導体からなる光吸収層3を塗布法あるいは印刷法を用いて形成し、さらにバッファ層4を形成する場合を例として説明する。図7ないし図12は、光電変換装置20の製造途中の様子を示す斜視図である。
上述の実施の形態は、主として、光電変換を担う層が、カルコパイライト系のI-III-VI族化合物を含む場合を対象に説明しているが、これに限られない。上述した溝部や接続部の配置態様を採用することによる発電寄与面積の増大は、Si多結晶基板や単結晶基板やその他の材料を用いた光電変換セルにおいても、同様に実現可能である。例えば、本発明の他の実施形態に係る光電変換装置は、陽極と負極とをともに被受光面側に設けたバックコンタクト型の光電変換装置などであってもよい。
D1’+D4’=D2’+D3’ ・・・(1’)
かつ
D1’>D2’≧D3’>D4’ ・・・(2’)
Claims (11)
- 互いに離間しつつ所定の配列方向に配列された複数の光電変換セルを有する光電変換装置であって、
前記光電変換セルは、
互いに対向するように平面的に隙間を空けて位置し、前記配列方向の一方端部の側に配置された第1の下部電極層および他方端部の側に配置された第2の下部電極層と、
前記第1の下部電極層上から前記第2の下部電極層上にかけて設けられた一方導電型の層と、前記一方導電型の層の上に設けられた他方導電型の層と、
前記第2の下部電極層および前記他方導電型の層を電気的に接続する接続導体と、
を備え、
一の前記光電変換セルに備わる前記第1の下部電極層と、前記一の光電変換セルと隣り合う前記光電変換セルの前記第2の下部電極層とが連続しているとともに、
前記光電変換セルにおいて、前記配列方向における前記一方端部から前記隙間までの最大距離および最小距離をそれぞれD1、D2とし、前記配列方向における前記他方端部から前記隙間までの最大距離および最小距離をそれぞれD3、D4とするとき、前記D1、前記D2、前記D3および前記D4が、
D1+D4=D2+D3かつD1>D2≧D3>D4の関係を有する、光電変換装置。 - 請求項1に記載の光電変換装置であって、
前記第1の下部電極層および前記第2の下部電極層は、前記配列方向に突出する凸部および前記配列方向に窪む凹部をそれぞれ有し、
前記第1の下部電極層の凸部と前記第2の下部電極層の凹部とが対向するとともに前記第1の下部電極層の凹部と前記第2の下部電極層の凸部とが対向している、光電変換装置。 - 請求項2に記載の光電変換装置であって、
前記第1の下部電極層および前記第2の下部電極層を平面視して、前記第1の下部電極層の凸部の面積が、前記第2の下部電極層の凸部の面積よりも大きい、光電変換装置。 - 請求項2または請求項3に記載の光電変換装置であって、
前記接続導体が前記第2の下部電極層の凸部の上に設けられる、光電変換装置。 - 請求項1ないし請求項4のいずれかに記載の光電変換装置であって、
前記他方導電型の層の上に上部電極をさらに備え、前記接続導体が、前記上部電極を介して前記他方導電型の層および前記第2の下部電極層を電気的に接続することを特徴とする光電変換装置。 - 請求項5に記載の光電変換装置であって、
前記上部電極が、前記他方導電型の層の上に設けられた複数の集電部と、該複数の集電部を連結する連結部とを含み、前記接続導体が前記第2の下部電極層と前記連結部とを接続する、光電変換装置。 - 請求項6に記載の光電変換装置であって、
前記連結部が前記隙間に沿って位置する部分を有する、光電変換装置。 - 請求項6に記載の光電変換装置であって、
前記連結部が前記隙間の上方に位置する部分を有する、光電変換装置。 - 請求項5ないし請求項8のいずれかに記載の光電変換装置であって、
前記上部電極が、前記他方導電型の層の上に全面に形成された電極層を含む、光電変換装置。 - 請求項9に記載の光電変換装置であって、
前記電極層が透明導電層を含む、光電変換装置。 - 請求項1ないし請求項10のいずれかに記載の光電変換装置であって、
前記接続導体が前記一方導電型の層を貫通している、光電変換装置。
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JP2000299486A (ja) * | 1999-04-12 | 2000-10-24 | Honda Motor Co Ltd | 太陽電池 |
JP2002373995A (ja) * | 2001-06-15 | 2002-12-26 | Honda Motor Co Ltd | 太陽電池の製造方法 |
JP2004119953A (ja) * | 2002-09-26 | 2004-04-15 | Honda Motor Co Ltd | 薄膜太陽電池およびその製造方法 |
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JP2000299486A (ja) * | 1999-04-12 | 2000-10-24 | Honda Motor Co Ltd | 太陽電池 |
JP2002373995A (ja) * | 2001-06-15 | 2002-12-26 | Honda Motor Co Ltd | 太陽電池の製造方法 |
JP2004119953A (ja) * | 2002-09-26 | 2004-04-15 | Honda Motor Co Ltd | 薄膜太陽電池およびその製造方法 |
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US11588061B2 (en) * | 2017-09-15 | 2023-02-21 | Idemitsu Kosan Co., Ltd. | Photoelectric conversion module and method for manufacturing photoelectric conversion module |
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