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Definitions

• the present invention concerns polymeric precursors for producing graphene nanoribbons, methods for preparing them, and oligophenylene monomers for the synthesis of polymeric precursors, as well as methods for preparing the graphene nanoribbons from the polymeric precursors and the oligophenylene monomers.
• Graphene an atomically thin layer from graphite, has received considerable interest in physics, material science and chemistry since the recent discovery of its appealing electronic properties. These involve superior charge carrier mobility and the quantum Hall effect. Moreover, its chemical robustness and material strength make graphene an ideal candidate for applications ranging from transparent conductive electrodes to devices for charge and energy storage.
• Graphene nanoribbons are linear structures that are derived from the parent graphene lattice. Their characteristic feature is high shape-anisotropy due to the increased ratio of length over width. Currently, their usage in yet smaller, flatter and faster carbon-based devices and integrated circuits is being widely discussed in material science.
• armchair-type GNRs exhibit a band gap that can be adjusted by their width. Their length becomes relevant when GNRs are to be used in devices such as field-effect transistors (FETs) for which a minimum channel width has to be bridged. The same holds for the potential replacement of copper or gold in nanoscale conducting pathways. At the same time the edge structure of the GNRs will have a strong impact. Computational simulations and experimental results on smaller nanographenes suggest that GNRs exhibiting nonbonding 7T-electron states at zigzag edges could be used as active component in spintronic devices.
• FETs field-effect transistors
• Suzuki-Miyaura polymerization of the b/s-boronic ester with diiodobenzene furnished polyphenylenes in a strongly sterically hindered reaction.
• Intramolecular Scholl reaction of the polyphenylene with FeCI 3 as oxidative reagent provides graphene nanoribbons.
• the resulting graphene nanoribbons are ill-defined due to the statistically arranged "kinks" in their backbone. Furthermore the molecular weight is limited due to the sensitivity of the A2B2-type polymerization approach to aberrations fromstoichiometry. No lateral solubilizing alkyl chains have been introduced into the graphene nanoribbons.
• the second case suffers also from the stoichiometry issue due to the underlying A2B2- stoichiometry of the A2B2-type Suzuki protocol and the sterical hindrance of 1 ,4-diiodo- 2,3,5,6-tetraphenylbenzene.
• the third case makes use of a step-wise synthesis which provides very defined cutouts from graphene nanoribbons but is impracticable for the fabrication of high- molecular weight species.
• R 1 and R 2 are independently of each other H, halogene, -OH, -NH 2 , -CN, -N0 2 or a linear or branched, saturated or unsaturated Ci-C 40 hydrocarbon residue, which can be substituted 1 - to 5-fold with halogene (F, CI, Br, I), -OR 3 , -NR 3 2 , -CN and/or -N0 2 , and wherein one or more CH 2 -groups can be replaced by -0-, -S-, -NR 4 -, -OC(O)- or - C(O)-, or an optionally substituted aryl, alkylaryl or alkoxyaryl residue;
• each R 3 is independently of each other H , C1-C30 akyl, C 2 -C 3 o alkenyl, C 2 -C 3 o alkynyl, C1-C30 haloalkyl, C 2 -C 30 haloalkenyl, C 2 -C 30 haloalkynyl or C 2 -C 30 acyl; each R 4 is independently of each other H , Ci-C 30 alkyl, C 2 -C 30 alkenyl, C 2 -C 30 alkynyl, CrC 30 haloalkyl, C 2 -C 30 haloalkenyl, C 2 -C 30 haloalkynyl or C 2 -C 30 acyl; and m represents 0, 1 or 2.
• R 1 and R 2 are independently of each other H, Ci-C 30 alkyl, CrC 30 alkoxy, Ci-C 30 alkylthio, C 2 -C 30 alkenyl, C 2 -C 30 alkynyl, CrC 30 haloalkyl, C 2 -C 30 haloalkenyl or haloalkynyl, e.g. CrC 30 perfluoroalkyl. More preferably R 1 and R 2 are independently of each other H, CrC 30 alkyl or CrC 30 alkoxy. Most preferably R 1 and R 2 and are independently of each other H or CrC 30 alkyl.
• Ci-C 30 alkyl can be linear or branched, where possible. Examples are methyl, ethyl, n-propyl, isopropyl, n-butyl, sec. -butyl, isobutyl, tert.
• Ci-C 30 alkoxy groups are straight-chain or branched alkoxy groups, e.g. methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, sec-butoxy, tert-butoxy, amyloxy, isoamyloxy, tert-amyloxy, heptyloxy, octyloxy, isooctyloxy, nonyloxy, decyloxy, undecyloxy, dode- cyloxy, tetradecyloxy, pentadecyloxy, hexadecyloxy, heptadecyloxy or octadecyloxy.
• alkylthio group means the same groups as the alkoxy groups, except that the oxygen atom of the ether linkage is replaced by a sulfur atom.
• C 2 -C 30 alkenyl groups are straight-chain or branched alkenyl groups, such as e.g.
• C 2 -30 alkynyl is straight-chain or branched and may be unsubstituted or substituted, such as, for example, ethynyl, 1-propyn-3-yl, 1 -butyn-4-yl, 1 -pentyn-5-yl, 2-methyl-3- butyn-2-yl, 1 ,4-pentadiyn-3-yl, 1 ,3-pentadiyn-5-yl, 1 -hexyn-6-yl, cis-3-methyl-2-penten- 4-yn-1 l-yl, trans-3-methyl-2-penten-4-yn-1 -yl, 1 ,3-hexadiyn-5-yl, 1 -octyn-8-yl, 1 -nonyn- 9-yl, 1 -decyn-10-yl, or 1 -tetracosyn-24-yl.
• Ci-C 3 o-perfluoroalkyl is a branched or unbranched radical such as for example -CF 3 , -CF 2 CF 3 , -CF 2 CF 2 CF 3 , -CF(CF 3 ) 2 , -(CF 2 ) 3 CF 3 or -C(CF 3 ) 3 .
• haloalkyi, haloalkenyl and haloalkynyl mean groups given by partially or wholly substituting the abovementioned alkyl group, alkenyl group and alkynyl group with halogen.
• C 2 -C 30 acyl is straight-chain or branched and may be saturated or unsaturated, such as, for example, ethanoyl, propanoyl, isobutanoyl, n-butanoyl, pentanoyl, hexanoyl, heptanoyl, octanoyl, nonanoyl, decanoyl or dodecanoyl.
• Aryl is usually C 6 -C 30 aryl, which optionally can be substituted, such as, for example, phenyl, 4-methylphenyl, 4-methoxyphenyl, naphthyl, biphenylyl, terphenylyl, pyrenyl, fluorenyl, phenanthryl, anthryl, tetracyl, pentacyl or hexacyl.
• R 1 is a linear or branched Ci-C 30 alkyl and R 2 is H.
• the problem is further solved by a polymeric precursor for producing graphene nanoribbons having repeating units of general formula (II),
• R 1 and R 2 are independently of each other H, halogene, -OH, -NH 2 , -CN, -N0 2 or a linear or branched, saturated or unsaturated Ci-C 40 hydrocarbon residue, which can be substituted 1 - to 5-fold with halogene (F, CI, Br, I), -OR 3 , -NR 3 2 , -CN and/or -N0 2 , and wherein one or more CH 2 -groups can be replaced by -0-, -S-, -NR 4 -, -OC(O)- or - C(O)-, or an optionally substituted aryl, alkylaryl or alkoxyaryl residue; each R 3 is independently of each other H, C1-C30 akyl, C 2 -C 3 o alkenyl, C 2 -C 3 o alkynyl, C1-C30 haloalkyl, C 2 -C 30 haloalkenyl, C
• R 1 and R 2 are independently of each other H, Ci-C 30 alkyl, CrC 30 alkoxy, Ci-C 30 alkylthio, C 2 -C 30 alkenyl, C 2 -C 30 alkynyl, CrC 30 haloalkyl, C 2 -C 30 haloalkenyl or haloalkynyl, e.g. CrC 30 perfluoroalkyl. More preferably R 1 and R 2 are independently of each other H, Ci-C 30 alkyl or CrC 30 alkoxy. Most preferably R 1 and R 2 are independently of each other H or CrC 30 alkyl.
• R 2 in formulae (I) and (II) is H.
• m in formulae (I) and (I I) represents 0 or 1 . More preferably, m in formulae (I) and (II) represents 0.
• R 1 is a linear or branched CrC 30 alkyl and R 2 is H.
• the oligophenylene monomer of general formula (I) is used for the preparation of the polymeric precursor for producing graphene nanoribbons having repeating units of general formula (II) by reacting it via Diels-Alder-Reaction according to Scheme 1 .
• the Diels-Alder reaction represents a well-established protocol which has been used for the build-up of functional molecules and polymers.
• the Diels-Alder-Reaction of oligophenylene monomer of general formula (I) to the polymeric precursor having repeating units of general formula (II) can be achieved under different conditions.
• the Diels-Alder-Reaction can be performed in high boiling solvents at elevated temperatures. Suitable high boiling solvents are diphenyl ether, 1 ,1 ,2,2- tetrachloroethane, 1 ,2-dichlorobenzene, 1 ,2,4-trichlorobenzene, nitrobenzene and benzophenone.
• the Diels-Alder-Reaction can be performed without using solvents at temperatures between 200 °C and 300 °C.
• the polymeric precursor having repeating units of general formula (II) contains from 2 to 900 repeating units and has a molecular weight of from 1 000 to 600 000 g/mol.
• the invention also concerns a process for the preparation of the polymeric precursor having repeating units of general formula (II) by Diels-Alder polymerization of the oligophenylene monomer of general formula (I).
• the invention also concerns a process for the preparation of graphene nanoribbons by cyclodehydrogenation of the polymeric precursor having repeating units of general formula (II) according to Scheme 2.
• the preparation of graphene nanoribbons of general formula (III) from the polymeric precursor having repeating units of general formula (II) can be performed e.g.
• reaction time is from 2 h to 10 d. If the reaction is carried out at around 20 °C, the reaction time is usually between two and four days. Preferably, a stream of an inert gas is passed through the reaction mixture during the reaction to avoid side reactions.
• the preparation of graphene nanoribbons of general formula (III) can be carried out using phenyliodine(lll)bis(trifluoroacetate) (PIFA) and boron trifluoride etherate in anhydrous DCM or molybdenum(V) pentachloride in anhydrous DCM.
• PIFA phenyliodine(lll)bis(trifluoroacetate)
• boron trifluoride etherate in anhydrous DCM or molybdenum(V) pentachloride in anhydrous DCM.
• the molecular weight of the graphene nanoribbons of general formula (III) varies from 1 000 to 600 000 g/mol.
• the oligophenylene monomer of general formula (I) can be synthesized according to Schemes 3 to 7 below, involving the two intermediates 3-bromobenzil 4 and substituted 1 ,3-bis(oligophenylenyl)propan-2-one 8, as summarized below in Scheme 7.
• the reaction conditions and solvents used are purely illustrative, of course other conditions and solvents can also be used and will be determined by the skilled in the art.
• the intermediate 3-bromobenzil 4 can be synthesized via a two-step route from commercially available 1 -bromo-3-iodobenzene 1 and ethynylbenzene 2 (Scheme 3). Sonogashira-type coupling of 1 and 2 can be used for the build-up of 3-bromodiphenylacetylene 3.
• the reaction can be achieved in a mixture of THF and triethylamine at room temperature in the presence of copper(l) iodide and a palladium(ll) catalyst.
• the second step consists in the oxidation of the acetylene group of 3- bromodiphenylacetylene 3 to yield the 3-bromobenzil 4.
• This step can be realized by stirring bromodiphenylacetylene 3 in the presence of iodine in dimethyl sulfoxide at elevated temperatures.
• Scheme 4 illustrates the synthetic route to substituted 1 ,3-bis(oligophenylenyl)propan- 2-one 8-0 starting from literature known halogenated toluene 5, wherein X and Y are independently selected from CI, Br, I or H.
• the first step consists in the bromination of the benzylic position of halogenated toluene 5 to yield the halogenated benzyl bromide 6.
• This step can be realized by heating halogenated toluene 5 under reflux in carbon tetrachloride in the presence of N-bromosuccinimide (NBS) and benzoyl peroxide.
• NBS N-bromosuccinimide
• the halogenated benzyl bromide 6 can be further reacted to the halogenated 1 ,3- bis(phenyl)propan-2-one 7. This is achieved by heating the halogenated benzyl bromide 6 under reflux in a reaction mixture of dichloromethane and water using iron(0) pentacarbonyl, potassium hydroxide and benzyltriethylammonium chloride.
• the last reaction step of this reaction sequence can be carried out with any desired substituted or non-substituted halide R 1 X' or R 2 X', wherein X' is selected from CI, Br or I and R 1 and R 2 are as defined above.
• substituted 1 ,3-bis(oligophenylenyl)propan- 2-one 8-0 is accessible using zinc(ll) iodide and a palladium(O) catalyst at room temperature. If both X and Y are H, this reaction step is omitted.
• the reaction can be achieved at an elevated temperature in a reaction mixture of toluene, ethanol and water in the presence of potassium carbonate and catalytic amounts of tetrakis(triphenylphosphine)palladium(0). Due to the higher reactivity of the iodine carbon bond, the coupling mainly proceeds at the iodine atom in the desired 1 -position.
• the next step consists in the bromination of the benzylic position of 2-bromo-5-methyl- biphenyl 11 to yield the functionalized biphenyl 12. This step can be realized by heating bromo-5-methyl-biphenyl 11 under reflux in carbon tetrachloride using N- bromosuccinimide (NBS) and benzoyl peroxide.
• the functionalized biphenyl 12 can be further reacted to 1 ,3-bis(bromobiphenyl)propan- 2-one 13. This is achieved by boiling the functionalized biphenyl 12 in a reaction mixture of dichloromethane and water in the presence of iron(0) pentacarbonyl, potassium hydroxide and benzyltriethylammonium chloride.
• the synthesis of the substituted 1 ,3-bis(oligophenylenyl)propan-2-one 8- 2 starts from commercially available 2-bromo-4-chloro-1 -iodobenzene 16 and the afore mentioned substituted phenylboronic acid pinacol ester 14. Suzuki cross coupling can be used for the build-up of the substituted 2-bromo-4-chlorobiphenyl 17.
• the reaction can be performed e.g. at an elevated temperature in a reaction mixture of toluene, ethanol and water in the presence of potassium carbonate and of tetrakis(triphenylphosphine)palladium(0).
• the substituted trisphenylenylboronic acid pinacol ester 19 can be prepared from chlorotrisphenylene 18 and bis(pinacol) ester of 1 ,4-phenyldiboronic acid under reflux in 1 ,4-dioxane in the presence of potassium acetate as a base and catalytic amounts of both tris(dibenzylideneacetone)dipalladium (0) (Pd 2 (dba) 3 ) and 2-dicyclohexyl- phosphino-2',4',6'-triisopropylbiphenyl (XPhos).
• Various articles of manufacture including electronic devices, optical devices, and optoelectronic devices, such as field effect transistors (e.g., thin film transistors), photovoltaics, organic light emitting diodes (OLEDs), complementary metal oxide semiconductors (CMOSs), complementary inverters, D flip-flops, rectifiers, and ring oscillators, that make use of the graphene nanoribbons disclosed herein also are within the scope of the present invention as are methods of making the same.
• field effect transistors e.g., thin film transistors
• OLEDs organic light emitting diodes
• CMOSs complementary metal oxide semiconductors
• CMOSs complementary inverters
• D flip-flops D flip-flops
• rectifiers and ring oscillators
• the present invention therefore, further provides methods of preparing a semiconductor material.
• the methods can include preparing a composition that includes one or more of the graphene nanoribbons of the invention disclosed herein dissolved or dispersed in a liquid medium such as a solvent or a mixture of solvents, depositing the composition on a substrate to provide a semiconductor material precursor, and processing (e.g., heating) the semiconductor precursor to provide a semiconductor material (e.g., a thin film semiconductor) that includes one or more of the graphene nanoribbons disclosed herein.
• the liquid medium can be an organic solvent, an inorganic solvent such as water, or combinations thereof.
• the composition can further include one or more additives independently selected from detergents, dispersants, binding agents, compatibilizing agents, curing agents, initiators, humectants, antifoaming agents, wetting agents, pH modifiers, biocides, and bacteriostats.
• additives independently selected from detergents, dispersants, binding agents, compatibilizing agents, curing agents, initiators, humectants, antifoaming agents, wetting agents, pH modifiers, biocides, and bacteriostats.
• surfactants and/or polymers e.g., polystyrene, polyethylene, poly-alpha-methylstyrene, polyisobutene, polypropylene, polymethylmethacrylate, and the like
• a dispersant e.g., polystyrene, polyethylene, poly-alpha-methylstyrene, polyisobutene, polypropylene, polymethylmethacrylate, and the like
• an antifoaming agent
• the depositing step can be carried out by printing, including inkjet printing and various contact printing techniques (e.g., screen-printing, gravure printing, offset printing, pad printing, lithographic printing, flexographic printing, and microcontact printing).
• the depositing step can be carried out by spin coating, drop-casting, zone casting, dip coating, blade coating, spraying or vacuum filtration.
• the present invention further provides articles of manufacture such as the various devices described herein that include a composite having a semiconductor material of the present invention and a substrate component and/or a dielectric component.
• the substrate component can be selected from doped silicon, an indium tin oxide (ITO), ITO-coated glass, ITO-coated polyimide or other plastics, aluminum or other metals alone or coated on a polymer or other substrate, a doped polythiophene, and the like.
• the dielectric component can be prepared from inorganic dielectric materials such as various oxides (e.g., Si0 2 , Al 2 0 3 , Hf0 2 ), organic dielectric materials such as various polymeric materials (e.g., polycarbonate, polyester, polystyrene, polyhaloethylene, polyacrylate), and self-assembled superlattice/self-assembled nanodielectric (SAS/SAND) materials (e.g., described in Yoon, M-H. et al., PNAS, 102 (13): 4678- 4682 (2005)), as well as hybrid organic/inorganic dielectric materials (e.g., described in US 2007/0181961 A1 ).
• the composite also can include one or more electrical contacts.
• Suitable materials for the source, drain, and gate electrodes include metals (e.g., Au, Al, Ni, Cu), transparent conducting oxides (e.g., ITO, IZO, ZITO, GZO, GIO, GITO), and conducting polymers (e.g., poly(3,4-ethylenedioxythiophene) poly(styrene- sulfonate) (PEDOT:PSS), polyaniline (PANI), polypyrrole (PPy).
• metals e.g., Au, Al, Ni, Cu
• transparent conducting oxides e.g., ITO, IZO, ZITO, GZO, GIO, GITO
• conducting polymers e.g., poly(3,4-ethylenedioxythiophene) poly(styrene- sulfonate) (PEDOT:PSS), polyaniline (PANI), polypyrrole (PPy).
• One or more of the composites described herein can be embodied within various organic electronic, optical, and optoelectronic devices such as organic thin film transistors (OTFTs), specifically, organic field effect transistors (OFETs), as well as sensors, capacitors, unipolar circuits, complementary circuits (e.g., inverter circuits), and the like.
• OFTs organic thin film transistors
• OFETs organic field effect transistors
• sensors capacitors
• unipolar circuits e.g., unipolar circuits
• complementary circuits e.g., inverter circuits
• graphene nanoribbons of the present invention are photovoltaics or solar cells.
• Compounds of the present invention can exhibit broad optical absorption and/or a very positively shifted reduction potential, making them desirable for such applications.
• the graphene nanoribbons described herein can be used as a n-type semiconductor in a photovoltaic design, which includes an adjacent p-type semiconductor material that forms a p-n junction.
• the compounds can be in the form of a thin film semiconductor, which can be deposited on a substrate to form a composite. Exploitation of compounds of the present invention in such devices is within the knowledge of a skilled artisan.
• another aspect of the present invention relates to methods of fabricating an organic field effect transistor that incorporates a semiconductor material of the present invention.
• the semiconductor materials of the present invention can be used to fabricate various types of organic field effect transistors including top-gate top-contact capacitor structures, top-gate bottom-contact capacitor structures, bottom-gate top- contact capacitor structures, and bottom-gate bottom-contact capacitor structures.
• OTFT devices can be fabricated with the present graphene nanoribbons on doped silicon substrates, using Si0 2 as the dielectric, in top-contact geometries.
• the active semiconductor layer which incorporates at least a graphene nanoribbon of the present invention can be deposited at room temperature or at an elevated temperature.
• the active semiconductor layer which incorporates at least a graphene nanoribbon of the present invention can be applied by spin-coating or printing as described herein.
• metallic contacts can be patterned on top of the films using shadow masks. The invention is illustrated in more detail by the following examples. Examples
• Figure 3 Chemical formulae, exact masses and molecular weights of tetrameric, pentameric, hexameric and heptameric polymeric precursor Ha.
• Figure 4 Molecular weight distribution of polymeric precursor Ha after fractionation by GPC (Table 1 , entry 2, THF, PSS).
• Figure 5 Raman spectrum of graphene nanoribbons Ilia (powder).
• THF 14 ⁇ g mL
• graphene nanoribbons Ilia as a film on a glass substrate drop-casted from dispersion in THF.
• Figure 7 UV-vis absorption spectrum of graphene nanoribbons Ilia in an exfoliated solution in NMP.
• Figure 8 Output characteristics of graphene nanoribbons Ilia at various gate biases
• a purple powder of 2,5-bis(4-dodecylphenyl)-3-(3-ethynylphenyl)-4-phenyl-2,4- cyclopentadienone la in a 25-mL Schlenk tube was heated to 260 °C using a heating mantle. The powder at first melted and then lost its purple color to be pale yellow. After cooling down to room temperature, the resulting polymer was sonicated in THF for 30 min, and the insoluble polymer was filtered off. The filtrate was concentrated in vacuo and fractionated by gel permeation chromatography (eluent: dichloromethane).

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