WO2013047321A1 - Alliage utilisé dans une couche en film mince de matériau magnétique doux sur un support d'enregistrement magnétique perpendiculaire, matériau de cible de pulvérisation et support d'enregistrement magnétique perpendiculaire comprenant une couche en film mince de matériau magnétique doux - Google Patents

Alliage utilisé dans une couche en film mince de matériau magnétique doux sur un support d'enregistrement magnétique perpendiculaire, matériau de cible de pulvérisation et support d'enregistrement magnétique perpendiculaire comprenant une couche en film mince de matériau magnétique doux Download PDF

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WO2013047321A1
WO2013047321A1 PCT/JP2012/074065 JP2012074065W WO2013047321A1 WO 2013047321 A1 WO2013047321 A1 WO 2013047321A1 JP 2012074065 W JP2012074065 W JP 2012074065W WO 2013047321 A1 WO2013047321 A1 WO 2013047321A1
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Prior art keywords
alloy
recording medium
tla
film layer
magnetic recording
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PCT/JP2012/074065
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English (en)
Japanese (ja)
Inventor
澤田　俊之
慶明 松原
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山陽特殊製鋼株式会社
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Priority to SG11201400805SA priority Critical patent/SG11201400805SA/en
Priority to CN201280046629.9A priority patent/CN103875035B/zh
Publication of WO2013047321A1 publication Critical patent/WO2013047321A1/fr

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
    • G11B5/667—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers including a soft magnetic layer
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/005—Ferrous alloys, e.g. steel alloys containing rare earths, i.e. Sc, Y, Lanthanides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/10—Ferrous alloys, e.g. steel alloys containing cobalt
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/14—Ferrous alloys, e.g. steel alloys containing titanium or zirconium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/126—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing rare earth metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H01F41/183—Sputtering targets therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering

Definitions

  • the present invention relates to a (Co, Fe) -lanthanoid alloy and a sputtering target material for a soft magnetic thin film layer in a perpendicular magnetic recording medium.
  • the progress of magnetic recording technology has been remarkable, and in order to increase the capacity of the drive, the recording density of the magnetic recording medium has been increased, and a higher recording density can be realized than the in-plane magnetic recording medium that has been popular in the past.
  • a perpendicular magnetic recording system has been put into practical use.
  • the perpendicular magnetic recording system is a method suitable for high recording density, in which the easy magnetization axis is oriented in the perpendicular direction with respect to the medium surface in the magnetic film of the perpendicular magnetic recording medium.
  • a two-layer recording medium having a magnetic recording film layer and a soft magnetic film layer with improved recording sensitivity has been developed.
  • a CoCrPt—SiO 2 alloy is used for the magnetic recording film layer.
  • a conventional soft magnetic film layer needs to have a high saturation magnetic flux density (hereinafter referred to as Bs) and an amorphous property. Further, depending on the application and use environment of the perpendicular magnetic recording medium, it has high corrosion resistance and high hardness. Various characteristics have been additionally required. For example, in Japanese Patent Application Laid-Open No. 2008-299905 (Patent Document 1), high Bs is obtained by adding Fe, and high hardness is obtained by adding B. In JP 2011-68985 (Patent Document 2), the corrosion resistance (weather resistance) is improved by adding Y or Ti.
  • an amorphous alloy having a low Bs is used for the soft magnetic layer of the perpendicular magnetic recording medium as described above. That is, an amorphous alloy having low Bs has a large decrease range of Bs as the temperature rises, and Bs under a temperature environment (for example, about 70 to 150 ° C.) higher than room temperature to which the drive is exposed becomes remarkably low. The function as the soft magnetic layer of the perpendicular magnetic recording medium cannot be sufficiently performed.
  • the present inventors have examined various additive elements in detail for Bs and temperature characteristics of the soft magnetic film alloy of the perpendicular magnetic recording medium. It was found that there is an inverse correlation between the Bs of B and the decrease in Bs from room temperature to 150 ° C. However, the addition of an element belonging to the lanthanoid deviates from this inverse correlation, and the present inventors found that the Bs reduction range up to 150 ° C. can be significantly reduced compared with an alloy having the same Bs at room temperature. .
  • an object of the present invention is to provide a soft magnetic alloy for perpendicular magnetic recording media having a high saturation magnetic flux density at a high temperature relative to a saturation magnetic flux density at room temperature, and a sputtering target material for producing a thin film of this alloy. is there.
  • a soft magnetic thin film layer made of the above alloy is provided.
  • a perpendicular magnetic recording medium having the soft magnetic thin film layer is provided.
  • a sputtering target material comprising the above alloy is provided.
  • the soft magnetic alloy for perpendicular magnetic recording media has a small decrease in Bs at a high temperature relative to Bs at room temperature, that is, a high temperature of about 70 to 150 ° C. at which the drive is exposed during use. , And a sputtering target material for producing a thin film of this alloy.
  • the alloy of the present invention in a perpendicular magnetic recording medium, the magnetic properties of the soft magnetic alloy can be fully exhibited, and the function of the soft magnetic thin film layer can be sufficiently enhanced. This can lead to an improvement in the performance of the magnetic recording medium.
  • FIG. 3 is a diagram showing an X-ray diffraction pattern of a 39% Co-39% Fe-8% Zr-6% B-8% (additive element) alloy made of a quenched ribbon. It is the figure which plotted Bs and Bs ratio of room temperature in Table 1. It is the figure which plotted Bs and Bs ratio of room temperature in Table 2.
  • Bs at room temperature and its temperature characteristics of the soft magnetic film alloy of the perpendicular magnetic recording medium were examined in detail for various additive elements. As a result, Bs at room temperature and Bs from room temperature to 150 ° C. It was found that there was an inverse correlation between the drop widths. However, when an element belonging to a lanthanoid was added, it was found that the inverse correlation relationship was removed, and the Bs decrease width up to 150 ° C. was significantly reduced as compared with an alloy having an equivalent Bs at room temperature.
  • the characteristics and operation of the amorphous soft magnetic alloy found by the present invention based on the above findings and having a small Bs decrease width at high temperatures relative to Bs at room temperature will be described below.
  • the elements belonging to the lanthanoids having atomic numbers 57 to 71 are La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.
  • TLA 0.5 ⁇ TLA ⁇ 15 (TLA is the total amount of elements added to the lanthanoids having atomic numbers 57 to 71)
  • TAM Y + Ti + Zr + Hf + V + Nb + Ta + B / 2) Total amount of addition amount, B alone being 1/2 times the value.
  • TLA + TAM + TNM ⁇ 30 C + Al + Si + P + Cr + Mn + Ni + Cu + Zn + Ga + Ge + Mo + Sn + W total%)
  • the element belonging to the lanthanoids having atomic numbers of 57 to 71 is an essential element for reducing Bs at room temperature and suppressing the decrease of Bs at high temperature, and also has an amorphous promoting effect.
  • the material of the alloy composition of the present invention when crystalline it is also an element that forms brittle intermetallic compounds with Co and / or Fe.
  • Y, Ti, Zr, Hf, V, Nb, Ta, and B are elements that lower Bs at room temperature and have an amorphous promoting effect.
  • C, Al, Si, P, Cr, Mn, Ni, Cu, Zn, Ga, Ge, Mo, Sn, and W are elements added to lower Bs at room temperature. Therefore, if the TLA is less than 0.5, the effect of suppressing the decrease in Bs at high temperatures is not sufficient, and if it exceeds 15, a large amount of brittle intermetallic compounds are produced. Processing becomes difficult. Further, if TLA + TAM is less than 5, the amorphous promoting effect is not sufficient. Further, when TLA + TAM + TNM exceeds 30, Bs at room temperature becomes excessively low.
  • the preferable range of each formula is as follows.
  • formula (1) preferably 1 ⁇ TLA ⁇ 13, more preferably 2 ⁇ TLA ⁇ 11.
  • formula (2) preferably 6 ⁇ TLA + TAM, more preferably 7 ⁇ TLA + TAM.
  • the range of the ratio of the Fe content and the total content of Fe and Co (hereinafter referred to as “Fe% / (Fe% + Co%)”) is not particularly limited, but the softness of the perpendicular magnetic recording medium is not limited.
  • the magnetic film those more than 0 and 0.90 or less are often used, and those having a value of 0.30 or more and 0.65 or less are more used.
  • a soft magnetic film layer in a perpendicular magnetic recording medium can be formed on a glass substrate or the like by sputtering a sputtering target material having the same component as that component.
  • the thin film formed by sputtering is rapidly cooled.
  • a quenching ribbon manufactured by a single roll type liquid quenching apparatus is used as a specimen. This is a simple evaluation of the influence of the components on various properties of a thin film formed by quenching by sputtering in a simple manner using a liquid quenching ribbon.
  • Experiment C a sputtering target material was actually produced, and a thin film produced by sputtering was evaluated.
  • 30 g of raw material weighed to a predetermined component was arc-melted in reduced-pressure Ar using a water-cooled copper mold having a diameter of about 10 mm and a depth of about 40 mm, to obtain a molten preform for the quenched ribbon. .
  • the conditions for preparing the quenched ribbon are a single roll method, set in this molten base material in a quartz tube having a diameter of 15 mm, the diameter of the hot water nozzle is 1 mm, the atmospheric pressure is 61 kPa, the spray differential pressure is 69 kPa, the copper roll (diameter is 300 mm). ) was set at 3000 rpm and the gap between the copper roll and the hot water nozzle was set to 0.3 mm, and the hot water was discharged.
  • the hot water temperature is not particularly limited, and the hot water is discharged immediately after each molten base material is completely melted.
  • the quenched ribbon thus prepared was used as a test material, and Bs and amorphous properties at room temperature and high temperature were evaluated.
  • Bs ratio the closer this Bs ratio is to 100%, the smaller the decrease in Bs from 30 ° C to 150 ° C.
  • amorphous property of the quenched ribbon usually, when an X-ray diffraction pattern of an amorphous material is measured, a diffraction peak is not seen and a halo pattern peculiar to an amorphous state is obtained. Moreover, when it is not completely amorphous, although a diffraction peak is seen, a peak height becomes low compared with a crystalline material, and a halo pattern is also seen. Therefore, amorphousness was evaluated by the following method. The test material was attached to a glass plate with a double-sided tape, and a diffraction pattern was obtained with an X-ray diffractometer.
  • the test material was affixed on the glass plate so that the measurement surface was a copper roll contact surface of a quenched ribbon.
  • the X-ray source was Cu-k ⁇ ray, and the scan speed was 4 ° / min.
  • the evaluation of the amorphous property was evaluated as ⁇ when the halo pattern could be confirmed, and x when no halo pattern was observed.
  • machinability For the evaluation of the machinability of the sputtering target material, 5 kg of a base material weighed to a predetermined component was induction-melted in a refractory crucible under a reduced Ar atmosphere and then solidified. The size of the crucible is 120 mm in diameter and 150 mm in height. From the lower part of the ingot, a sputtering target material having a diameter of 95 mm and a thickness of 2 mm was produced by lathe processing, wire cutting processing, and plane polishing processing. Machinability was evaluated by the occurrence of chips and cracks during these processes.
  • the atmospheric pressure in the chamber was evacuated to 1 ⁇ 10 ⁇ 4 Pa or less, and Ar gas having a purity of 99.9% was added until the pressure reached 0.6 Pa to perform sputtering.
  • the thin film was formed on the glass substrate so as to have a thickness of 1.5 ⁇ m.
  • Bs and Bs ratio, and the crystal structure were evaluated similarly to the quenched ribbon.
  • two basic compositions were selected, a certain amount of additive element was added to each, and changes in Bs and Bs ratio at room temperature depending on the type of additive element were evaluated. The results are shown as Experiment A and Experiment B.
  • Table 1 shows various properties of the quenched ribbon with various elements added.
  • No. Nos. 1 to 10 are examples of the present invention.
  • Reference numerals 11 to 31 are comparative examples.
  • FIG. 2 shows a plot of room temperature Bs and Bs ratio in Table 1.
  • FIG. 2 shows that the composition added with an element other than the element belonging to the lanthanoid shows a correlation in which the Bs ratio also decreases with a decrease in Bs at room temperature, whereas the composition added with the element belonging to the lanthanoid clearly It can be seen that the Bs ratio is high despite the low Bs at room temperature.
  • Experiment B is an alloy in which Co is 39.6%, Fe is 48.4%, Ti is 3%, Zr is 2%, Nb is 3%, Ta is 2%, and the balance is 2%. And the effect of the type of additive element under a constant addition amount was evaluated.
  • No. 11 is an alloy containing no additive elements and blended so that Co, Fe, Ti, Zr, Nb, and Ta are 40.5 to 49.5 to 3 to 2 to 3 to 2.
  • Table 2 shows various properties of the quenched ribbon with various elements added.
  • No. 1-4 are examples of the present invention.
  • Reference numerals 5 to 14 are comparative examples.
  • FIG. 3 shows a plot of room temperature Bs and Bs ratio in Table 2.
  • FIG. 3 shows that the composition in which an element other than the element belonging to the lanthanoid is added has a correlation in which the Bs ratio also decreases with a decrease in Bs at room temperature. It can be seen that the Bs ratio is high despite the low Bs at room temperature.
  • Table 3 shows various properties of the sputtered thin film.
  • a to J are examples of the present invention, and a to j are comparative examples.
  • Comparative Example a is an example in which 5% Zr is added in place of 2% Nd and 3% Gd added in Invention Example A.
  • TLA the element belonging to the lanthanoid of the present invention example
  • the difference in Bs at room temperature is as small as 0.08 T or less.
  • the Bs ratio is 0.2% or less in the composition containing 0.5% or more of the element belonging to the lanthanoid in the pair other than J and j (samples from A to I) than in the composition (samples from a to i). 1 to 10% higher.
  • all of the sputtering target materials A to I and a to i could be processed without chipping.
  • the sample of J was not chipped during machining, but the sample of j was made of three sputtering target materials, but two of them were broken and could not be made, and the other one was made but chipped. There has occurred. Furthermore, since the sample of j has a large TLA + TAM + TNM of 31, Bs at room temperature is excessively low.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
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Abstract

L'invention porte sur un alliage magnétique doux destiné à être utilisé dans un support d'enregistrement magnétique perpendiculaire, ledit alliage ayant une densité de flux de saturation élevée à des températures élevées par rapport à sa densité de flux de saturation à température ambiante. Ledit alliage contient les éléments suivants : un ou plusieurs éléments lanthanides, qui ont des numéros atomiques allant de 57 à 71 ; et un ou plusieurs éléments choisis parmi l'yttrium, le titane, le zirconium, l'hafnium, le vanadium, le niobium, le tantale et le bore et/ou un ou plusieurs éléments choisis parmi le carbone, l'aluminium, le silicium, le phosphore, le chrome, le manganèse, le nickel, le cuivre, le zinc, le gallium, le germanium, le molybdène, l'étain et le tungstène. Le reste dudit alliage comprend du cobalt, du fer et des impuretés inévitables. Les pourcentages atomiques des éléments constituant satisfont chacune des relations suivantes : (1) 0,5 ≤ TLA ≤ 15, (2) 5 ≤ TLA+TAM et (3) TLA+TAM+TNM ≤ 30, TLA représentant la somme des pourcentages atomiques des éléments lanthanides, TAM représentant Y+Ti+Zr+Hf+V+Nb+Ta+B/2 (seul le pourcentage atomique du bore étant divisé par deux), et TNM représentant C+Al+Si+P+Cr+Mn+Ni+Cu+Zn+Ga+Ge+Mo+Sn+W.
PCT/JP2012/074065 2011-09-26 2012-09-20 Alliage utilisé dans une couche en film mince de matériau magnétique doux sur un support d'enregistrement magnétique perpendiculaire, matériau de cible de pulvérisation et support d'enregistrement magnétique perpendiculaire comprenant une couche en film mince de matériau magnétique doux WO2013047321A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
SG11201400805SA SG11201400805SA (en) 2011-09-26 2012-09-20 Alloy used in soft-magnetic thin-film layer on perpendicular magnetic recording medium, sputtering-target material, and perpendicular magnetic recording medium having soft-magnetic thin-film layer
CN201280046629.9A CN103875035B (zh) 2011-09-26 2012-09-20 在垂直磁记录介质上的软磁性薄膜层中使用的合金，溅射靶材，以及具有软磁性薄膜层的垂直磁记录介质

Applications Claiming Priority (2)

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JP2011209856A JP5474902B2 (ja) 2011-09-26 2011-09-26 垂直磁気記録媒体における軟磁性薄膜層に用いる合金およびスパッタリングターゲット材並びに軟磁性薄膜層を有する垂直磁気記録媒体。
JP2011-209856 2011-09-26

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WO2013047321A1 true WO2013047321A1 (fr) 2013-04-04

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Cited By (1)

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CN104538144A (zh) * 2015-01-17 2015-04-22 徐文萍 一种钆掺杂铁镍基软磁材料的制备方法

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Publication number Priority date Publication date Assignee Title
JP6405261B2 (ja) * 2014-05-01 2018-10-17 山陽特殊製鋼株式会社 磁気記録用軟磁性合金及びスパッタリングターゲット材並びに磁気記録媒体
JP2020135907A (ja) * 2019-02-18 2020-08-31 山陽特殊製鋼株式会社 垂直磁気記録媒体の軟磁性層形成用スパッタリングターゲット、並びに、垂直磁気記録媒体及びその軟磁性層

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JP2002074639A (ja) * 2000-08-24 2002-03-15 Hitachi Ltd 垂直磁気記録媒体及び磁気記憶装置
JP2002133635A (ja) * 2000-10-25 2002-05-10 Hitachi Maxell Ltd 情報記録媒体及び情報記録装置
JP2002216333A (ja) * 2001-01-22 2002-08-02 Hitachi Maxell Ltd 磁気記録媒体及び磁気記録装置
JP2003317222A (ja) * 2002-04-19 2003-11-07 Hitachi Ltd 記録媒体
JP2004118977A (ja) * 2002-09-27 2004-04-15 Toshiba Corp 垂直磁気記録媒体及び磁気記録再生装置

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CN104538144A (zh) * 2015-01-17 2015-04-22 徐文萍 一种钆掺杂铁镍基软磁材料的制备方法

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MY166858A (en) 2018-07-24
SG11201400805SA (en) 2014-08-28

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