JP5474902B2 - 垂直磁気記録媒体における軟磁性薄膜層に用いる合金およびスパッタリングターゲット材並びに軟磁性薄膜層を有する垂直磁気記録媒体。 - Google Patents
垂直磁気記録媒体における軟磁性薄膜層に用いる合金およびスパッタリングターゲット材並びに軟磁性薄膜層を有する垂直磁気記録媒体。 Download PDFInfo
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/667—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers including a soft magnetic layer
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/07—Alloys based on nickel or cobalt based on cobalt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/005—Ferrous alloys, e.g. steel alloys containing rare earths, i.e. Sc, Y, Lanthanides
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/10—Ferrous alloys, e.g. steel alloys containing cobalt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/14—Ferrous alloys, e.g. steel alloys containing titanium or zirconium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/126—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing rare earth metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Description
(1)at%で、原子番号が57〜71のランタノイドに属する元素を1種以上と、Y,Ti,Zr,Hf,V,Nb,Ta,Bの1種もしくは2種以上または/およびC,Al,Si,P,Cr,Mn,Ni,Cu,Zn,Ga,Ge,Mo,Sn,Wの1種もしくは2種以上を含み残部Co,Feおよび不可避的不純物からなり、下記の式(1)〜(3)を全て満たすことを特徴とした垂直磁気記録媒体における軟磁性薄膜層に用いる合金。(1)0.5≦TLA≦15
(2)5≦TLA+TAM
(3)TLA+TAM+TNM≦30
ただし、TLAは原子番号57〜71のランタノイドに属する元素の添加量の合計%
TAM=Y+Ti+Zr+Hf+V+Nb+Ta+B/2の添加量の合計%
なお、Bのみ1/2倍の値。
TNM=C+Al+Si+P+Cr+Mn+Ni+Cu+Zn+Ga+Ge+Mo+Sn+Wの添加量の合計%
(3)前記(2)に記載の軟磁性薄膜層を有する垂直磁気記録媒体。
(4)前記(1)に記載の合金からなるスパッタリングターゲット材。
(5)前記(4)に記載のスパッタリングターゲット材から成膜された軟磁性薄膜層。
(6)前記(5)に記載の軟磁性薄膜層を有する垂直磁気記録媒体にある。
上述したように、垂直磁気記録媒体の軟磁性膜用合金の室温でのBsとその温度特性について、様々な添加元素を詳細に検討した結果、室温でのBsと室温から150℃までのBsの低下幅には逆の相関があることがわかった。しかしながら、ランタノイドに属する元素を添加すると、この逆相関の関係から外れ、室温で同等のBsを有する合金と比較し、著しく150℃までのBs低下幅が小さく抑えられることが分かった。
式(1)0.5≦TLA≦15(TLAは原子番号57〜71のランタノイドに属する元素の添加量の合計%)
式(2)5≦TLA+TAM(TAM=Y+Ti+Zr+Hf+V+Nb+Ta+B/2の添加量の合計%、なお、Bのみ1/2倍の値。
式(3)TLA+TAM+TNM≦30(TNM=C+Al+Si+P+Cr+Mn+Ni+Cu+Zn+Ga+Ge+Mo+Sn+Wの添加量の合計%)
通常、垂直磁気記録媒体における軟磁性膜層は、その成分と同じ成分のスパッタリングターゲット材をスパッタし、ガラス基板などの上に成膜し得られる。ここでスパッタにより成膜された薄膜は急冷されている。これに対し、以下に示す実験AおよびBでは、供試材として、単ロール式の液体急冷装置にて作製した急冷薄帯を用いている。これは実際にスパッタにより急冷され成膜された薄膜の、成分による諸特性への影響を、簡易的に液体急冷薄帯により評価したものである。
急冷薄帯の作製条件については、所定の成分に秤量した原料30gを径が10mmで深さが40mm程度の水冷銅鋳型にて減圧Ar中でアーク溶解し、急冷薄帯の溶解母材とした。急冷薄帯の作製条件は、単ロール方式で、径15mmの石英管中にこの溶解母材にセットし、出湯ノズルの径を1mmとし、雰囲気圧61kPa、噴霧差圧69kPa、銅ロール(径300mm)の回転数は3000rpmで、銅ロールと出湯ノズルのギャップ0.3mmに設定して出湯した。出湯温度は特に限定せず、出湯するタイミングは各溶解母材が完全に溶け落ちた直後とした。このようにして作製した急冷薄帯を供試材とし、室温と高温でのBsと非晶質性を評価した。
ガラス板に両面テープで供試材を貼り付け、X線回折装置にて回折パターンを得た。このとき、測定面は急冷薄帯の銅ロール接触面となるように供試材をガラス板に貼り付けた。X線源はCu−kα線で、スキャンスピードを4°/minとして測定した。この回折パターンにハローパターンが確認できるものを○、全くハローパターンが見られないものを×として非晶質性の評価とした。
実験Bは、Coが39.6%で、Feが48.4%、Tiが3%、Zrが2%、Nbが3%、Taが2%で、残部の2%が添加元素となる合金を作成し、添加量が一定の下での添加元素種類の影響を評価した。なお、No.11は添加元素がなく、CoとFe、Ti、Zr、Nb、Taが40.5対49.5対3対2対3対2になるように配合した合金である。
Claims (6)
- at%で、原子番号が57〜71のランタノイドに属する元素を1種以上と、Y,Ti,Zr,Hf,V,Nb,Ta,Bの1種もしくは2種以上または/およびC,Al,Si,P,Cr,Mn,Ni,Cu,Zn,Ga,Ge,Mo,Sn,Wの1種もしくは2種以上を含み、残部Co,Feおよび不可避的不純物からなり、下記の式(1)〜(3)を全て満たすことを特徴とした垂直磁気記録媒体における軟磁性薄膜層に用いる合金。
(1)0.5≦TLA≦15
(2)5≦TLA+TAM
(3)TLA+TAM+TNM≦30
ただし、TLAは原子番号57〜71のランタノイドに属する元素の添加量の合計%
TAM=Y+Ti+Zr+Hf+V+Nb+Ta+B/2の添加量の合計%、なお、Bのみ1/2倍の値。
TNM=C+Al+Si+P+Cr+Mn+Ni+Cu+Zn+Ga+Ge+Mo+Sn+Wの添加量の合計% - 請求項1に記載の合金からなる軟磁性薄膜層。
- 請求項2に記載の軟磁性薄膜層を有する垂直磁気記録媒体。
- 請求項1に記載の合金からなるスパッタリングターゲット材。
- 請求項4に記載のスパッタリングターゲット材から成膜された軟磁性薄膜層。
- 請求項5に記載の軟磁性薄膜層を有する垂直磁気記録媒体。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011209856A JP5474902B2 (ja) | 2011-09-26 | 2011-09-26 | 垂直磁気記録媒体における軟磁性薄膜層に用いる合金およびスパッタリングターゲット材並びに軟磁性薄膜層を有する垂直磁気記録媒体。 |
PCT/JP2012/074065 WO2013047321A1 (ja) | 2011-09-26 | 2012-09-20 | 垂直磁気記録媒体における軟磁性薄膜層に用いる合金およびスパッタリングターゲット材並びに軟磁性薄膜層を有する垂直磁気記録媒体 |
MYPI2014700683A MY166858A (en) | 2011-09-26 | 2012-09-20 | Alloy used in soft-magnetic thin-film layer on perpendicular magnetic recording medium, sputtering-target material, and perpendicular magnetic recording medium having soft-magnetic thin-film layer |
SG11201400805SA SG11201400805SA (en) | 2011-09-26 | 2012-09-20 | Alloy used in soft-magnetic thin-film layer on perpendicular magnetic recording medium, sputtering-target material, and perpendicular magnetic recording medium having soft-magnetic thin-film layer |
CN201280046629.9A CN103875035B (zh) | 2011-09-26 | 2012-09-20 | 在垂直磁记录介质上的软磁性薄膜层中使用的合金,溅射靶材,以及具有软磁性薄膜层的垂直磁记录介质 |
TW101135292A TWI604078B (zh) | 2011-09-26 | 2012-09-26 | Perpendicular magnetic recording medium, soft magnetic film layer alloy, sputtering target, and perpendicular magnetic recording medium having a soft magnetic film layer |
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JP2011209856A JP5474902B2 (ja) | 2011-09-26 | 2011-09-26 | 垂直磁気記録媒体における軟磁性薄膜層に用いる合金およびスパッタリングターゲット材並びに軟磁性薄膜層を有する垂直磁気記録媒体。 |
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JP2013073635A JP2013073635A (ja) | 2013-04-22 |
JP5474902B2 true JP5474902B2 (ja) | 2014-04-16 |
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JP2011209856A Expired - Fee Related JP5474902B2 (ja) | 2011-09-26 | 2011-09-26 | 垂直磁気記録媒体における軟磁性薄膜層に用いる合金およびスパッタリングターゲット材並びに軟磁性薄膜層を有する垂直磁気記録媒体。 |
Country Status (5)
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JP (1) | JP5474902B2 (ja) |
MY (1) | MY166858A (ja) |
SG (1) | SG11201400805SA (ja) |
TW (1) | TWI604078B (ja) |
WO (1) | WO2013047321A1 (ja) |
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JP6405261B2 (ja) * | 2014-05-01 | 2018-10-17 | 山陽特殊製鋼株式会社 | 磁気記録用軟磁性合金及びスパッタリングターゲット材並びに磁気記録媒体 |
CN104538144B (zh) * | 2015-01-17 | 2017-06-09 | 东莞市久星磁性材料有限公司 | 一种钆掺杂铁镍基软磁材料的制备方法 |
JP2020135907A (ja) * | 2019-02-18 | 2020-08-31 | 山陽特殊製鋼株式会社 | 垂直磁気記録媒体の軟磁性層形成用スパッタリングターゲット、並びに、垂直磁気記録媒体及びその軟磁性層 |
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JPH10214718A (ja) * | 1997-01-30 | 1998-08-11 | Minebea Co Ltd | 磁気記録媒体 |
JP2002074639A (ja) * | 2000-08-24 | 2002-03-15 | Hitachi Ltd | 垂直磁気記録媒体及び磁気記憶装置 |
JP2002133635A (ja) * | 2000-10-25 | 2002-05-10 | Hitachi Maxell Ltd | 情報記録媒体及び情報記録装置 |
JP2002216333A (ja) * | 2001-01-22 | 2002-08-02 | Hitachi Maxell Ltd | 磁気記録媒体及び磁気記録装置 |
JP2003317222A (ja) * | 2002-04-19 | 2003-11-07 | Hitachi Ltd | 記録媒体 |
JP2004118977A (ja) * | 2002-09-27 | 2004-04-15 | Toshiba Corp | 垂直磁気記録媒体及び磁気記録再生装置 |
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CN103875035A (zh) | 2014-06-18 |
TW201339342A (zh) | 2013-10-01 |
TWI604078B (zh) | 2017-11-01 |
MY166858A (en) | 2018-07-24 |
SG11201400805SA (en) | 2014-08-28 |
WO2013047321A1 (ja) | 2013-04-04 |
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