WO2013046992A1 - チップの三次元実装方法 - Google Patents

チップの三次元実装方法 Download PDF

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Publication number
WO2013046992A1
WO2013046992A1 PCT/JP2012/070869 JP2012070869W WO2013046992A1 WO 2013046992 A1 WO2013046992 A1 WO 2013046992A1 JP 2012070869 W JP2012070869 W JP 2012070869W WO 2013046992 A1 WO2013046992 A1 WO 2013046992A1
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Prior art keywords
chip
chips
adhesive
mounting method
dimensional mounting
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PCT/JP2012/070869
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English (en)
French (fr)
Inventor
永司 山口
到 飯田
原田　宗生
中尾　賢
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東京エレクトロン株式会社
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Publication of WO2013046992A1 publication Critical patent/WO2013046992A1/ja

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Definitions

  • the present invention relates to a three-dimensional mounting method for a chip in which a plurality of chips are stacked.
  • a three-dimensional mounting method for manufacturing a semiconductor device by stacking a plurality of IC substrates (chips) has been developed.
  • a wiring made of a conductor that penetrates the chip in the thickness direction, for example, TSV (Through Silicon Via) is formed, and the end of the wiring of one chip is the wiring of another chip.
  • a circuit is formed three-dimensionally by being connected to the end (see, for example, Patent Document 1).
  • the lower layer chip is subjected to heat history many times, and as a result, the wiring, film, etc. in the chip may be deteriorated.
  • a heating apparatus since it is necessary to repeat stacking and heating of chips in one apparatus, for example, a heating apparatus, there is a problem that the time for occupying the heating apparatus becomes long and the manufacturing efficiency decreases.
  • An object of the present invention is to provide a chip three-dimensional mounting method capable of preventing thermal degradation of a chip in a semiconductor device and preventing reduction in manufacturing efficiency.
  • a chip three-dimensional mounting method in which a plurality of chips of an electronic integrated circuit having electrodes formed on the surface of a plate-like member are stacked.
  • the electrodes in one chip and the electrodes in the other chip are opposed to each other, and an adhesive that disappears by heating is interposed between the two chips.
  • At least one of the opposing electrodes is covered with a reducing agent that disappears by heating.
  • the pressure-sensitive adhesive contains the reducing agent, and the pressure-sensitive adhesive covers at least one surface of both the chips in the stacking step.
  • the adhesive in the laminating step, preferably covers at least one surface of both the chips so as to avoid the opposing electrodes.
  • the protruding amount of the adhesive from the surface of the chip is preferably larger than the protruding amount of the electrode and the reducing agent covering the electrode from the surface of the chip.
  • the two chips are adhered to each other by interposing an adhesive that disappears by heating between the two chips, and the plurality of stacked chips are heated. Since the pressure-sensitive adhesive disappears and the opposing electrodes are bonded together, the relative positions of the chips are not displaced, and a plurality of chips stacked in the course of manufacturing the semiconductor device can be moved. As a result, devices used for stacking and heating of chips can be separated. That is, it is not necessary to repeat the stacking and heating of the chips in one device. In addition, stacking and heating can be performed in one step by performing stacking and heating of chips in separate apparatuses. Thereby, the lower layer chip does not receive the heat history many times. As a result, it is possible to prevent thermal degradation of the chip in the semiconductor device and prevent a decrease in manufacturing efficiency.
  • FIG. 1 is a cross-sectional view schematically showing a configuration of a semiconductor device manufactured by a three-dimensional mounting method for chips according to a first embodiment of the present invention.
  • a semiconductor device 10 is configured by laminating a plurality of IC substrates (chips) 11.
  • Each chip 11 corresponds to a plate-like substrate 12 made of a semiconductor, for example, silicon, a plurality of wires 13 made of a conductor that penetrates the substrate 12 in the thickness direction, and one end of each wire 13 exposed on the surface of the substrate 12.
  • a thin-film electrode pad 14 made of a conductor covering one end of each wiring 13.
  • the end portion (electrode) of the wiring 13 in one chip 11 is joined to the electrode pad 14 (electrode) in another chip 11 arranged on the one chip 11.
  • FIGS. 4A and 4B are process diagrams for explaining a three-dimensional mounting method of the chip according to the present embodiment.
  • a chip stacking apparatus 20 including a chamber 16, a stage 17 disposed in the chamber 16, a nozzle-like dispenser 18 that supplies an adhesive 15, and an arm 19 that holds and moves each chip 11.
  • the chip 11 is placed on the stage 17 by the arm 19, and the adhesive 15 is applied by the dispenser 18 so as to cover the entire upper surface of the placed chip 11 in the figure.
  • the dispenser 18 is configured to be movable in the chamber 16 and applies the adhesive 15 to the upper surface of the chip 11 by moving in parallel with the upper surface of the chip 11.
  • the adhesive 11 may be applied to the upper surface of the chip 11 by performing parallel movement of the chip 11 using the stage 17 to move the chip 11 relative to the dispenser 18.
  • the pressure-sensitive adhesive 15 includes a reducing agent, and the components are adjusted so that the pressure-sensitive adhesive 15 and the reducing agent are vaporized by heating and disappear.
  • the plurality of stacked chips 11 are adjusted from the chip stacking apparatus 20 to the chamber 21, the stage 22 disposed in the chamber 21, the inner lid 23 facing the stage 22, and the pressure in the chamber 21. It moves to the chip
  • FIG. At this time, since the adhesive 15 adheres the two chips 11 to each other by the adhesive force, the relative position of each chip 11 with respect to the other chip 11 is not shifted in the plurality of stacked chips 11, and the lower chip 11. The state where the end of each wiring 13 is opposed to each electrode pad 14 of the upper chip 11 is maintained.
  • the inner lid 23 is configured to be movable toward the stage 22, and the stage 22 and the inner lid 23 each incorporate a heater (not shown). Thereafter, as shown in FIG. 3B, the stacked chips 11 are placed on the stage 22, and the inner lid 23 is brought into contact with the upper surface of the uppermost chip 11 of the stacked chips 11.
  • the plurality of stacked chips 11 are pressed toward the stage 22 by the inner lid 23, and an inert gas such as N 2 gas is supplied into the chamber 21 from a gas supply device (not shown). Supplying at a flow rate of 3 l / min or more, the oxygen concentration in the chamber 21 is reduced to about 10 to 100 ppm. Further, the heaters of the stage 22 and the inner lid 23 are heated to heat the plurality of stacked chips 11 to 140 ° C. to 200 ° C. to reduce the metal surface in each chip 11.
  • an inert gas such as N 2 gas
  • the reducing agent starts to vaporize at about 100 ° C. to 160 ° C., but at the time of the vaporization, the end of each wiring 13 exposed to the upper surface of the chip 11 is reduced and the The end surface is cleaned. Thereafter, the pressure-sensitive adhesive 15 also starts to vaporize at about 150 ° C., and the pressure-sensitive adhesive 15 between the chips 11 gradually decreases. When all the pressure-sensitive adhesives 15 are eventually lost, the pressure-sensitive adhesive 15 is exposed on the upper surface of the lower chip 11. The end of each wiring 13 to be in contact with each electrode pad 14 disposed on the lower surface of the upper chip 11.
  • each wiring 13 is cleaned, and the chamber 21 is filled with N 2 gas and the O 2 gas is reduced. Therefore, the end of each wiring 13 is not immediately oxidized. Thereby, the contact failure with the edge part of each wiring 13 and each electrode pad 14 can be prevented, and conduction
  • the pressure in the chamber 21 is reduced to, for example, about 25 to 200 Pa, and as shown in FIG. 4B, even after all the adhesives 15 disappear.
  • the plurality of chips 11 are continuously pressed toward the stage 22 by the inner lid 23, and the plurality of chips 11 stacked by the heaters of the stage 22 and the inner lid 23 are further heated to a high temperature, for example, 280 ° C.
  • a high temperature for example, 280 ° C.
  • the end of each wiring 13 is melted by heat and joined to each electrode pad 14.
  • this process is terminated.
  • the adhesive is vaporized and disappears by heating between the two chips 11. 15, the two chips 11 are adhered to each other, the plurality of stacked chips 11 are heated to eliminate the adhesive 15, and the ends of the respective wirings 13 and the electrode pads 14 are bonded to each other.
  • the relative positions of the chips 11 are not shifted, and the plurality of chips 11 stacked in the course of manufacturing the semiconductor device 10 can be moved. As a result, devices used for stacking and heating can be separated. That is, it is not necessary to repeat the stacking and heating of the chips 11 in one device.
  • stacking and heating the chips 11 with the chip stacking device 20 and the chip heating device 24, respectively stacking and heating can be performed in one step.
  • the lower layer chip 11 does not receive the heat history many times.
  • thermal degradation of the chip 11 in the semiconductor device 10 can be prevented, and a decrease in manufacturing efficiency of the semiconductor device 10 can be prevented.
  • the adhesive 15 includes a reducing agent, and the adhesive 15 covers the entire upper surface of the chip 11, so that it is ensured between the lower chip 11 and the upper chip 11. Both chips 11 can be reliably adhered with the adhesive 15 interposed therebetween, and it is not necessary to apply the reducing agent and the adhesive 15 separately, so that the efficiency of stacking the chips 11 can be improved.
  • the pressure in the chamber 21 is reduced to 25 Pa to 200 Pa.
  • the manufacturing efficiency of the semiconductor device 10 can be further improved.
  • the ends of the wirings 13 exposed on the upper surface of the lower chip 11 and the electrode pads 14 disposed on the lower surface of the upper chip 11 are melted by melting the wirings 13. Bonded, solder balls and solder bumps are provided at the ends of the wires 13 exposed on the upper surface of the lower chip 11, and the ends of the wires 13 and the electrode pads 14 are bonded by melting the solder. Also good.
  • the adhesive 15 is first removed and the ends of the wirings 13 and the electrode pads 14 are joined. However, the ends of the wirings 13 and the electrode pads 14 are joined first. After that, the pressure-sensitive adhesive 15 may be lost. In this case, the adhesive 15 applied to the upper surface of each chip 11 is applied avoiding the end portions of the respective wirings 13, and when the end portions of the respective wirings 13 and the respective electrode pads 14 are joined, The pressure is increased to suppress vaporization of the adhesive 15.
  • FIGS. 6A and 6B and FIGS. 7A and 7B are process diagrams for explaining the three-dimensional mounting method of the chip according to the present embodiment.
  • the chip 11 is placed on the stage 17 by the arm 19, and the end of each wiring 13 is covered on the upper surface of the placed chip 11 in the figure.
  • the reducing agent 26 is applied, and the adhesive 27 is applied so as to avoid the ends of the wirings 13.
  • the protruding amount of the adhesive 27 from the upper surface of the chip 11 is adjusted to be larger than the protruding amount of the end portion of each wiring 13 and the reducing agent 26 covering the end portion from the upper surface of the chip 11.
  • the components of the reducing agent 26 and the adhesive 27 are adjusted so that they are vaporized by heating and disappear.
  • the plurality of stacked chips 11 are moved from the chip stacking device 20 to the chip heating device 24.
  • the adhesive 27 adheres the two chips 11 to each other by the adhesive force, the relative position of each chip 11 with respect to the other chip 11 is not shifted in the plurality of stacked chips 11, and the lower chip 11.
  • the state where the end of each wiring 13 is opposed to each electrode pad 14 of the upper chip 11 is maintained.
  • the stacked chips 11 are placed on the stage 22, and the inner lid 23 is brought into contact with the upper surface of the uppermost chip 11 of the stacked chips 11.
  • the plurality of stacked chips 11 are pressed toward the stage 22 by the inner lid 23, the supply amount of N 2 gas, the temperature of the stacked plurality of chips 11, and the inside of the chamber 21 Are set to the same conditions as in the first embodiment.
  • the reducing agent 26 starts to vaporize at about 100 to 160 ° C., and reduces the end of each wiring 13 to clean the surface of the end.
  • the adhesive 27 also starts to vaporize at about 150 ° C., and when all the reducing agent 26 and the adhesive 27 disappear, the end of each wiring 13 exposed on the upper surface of the lower chip 11 becomes the upper chip 11. It contacts with each electrode pad 14 arranged on the lower surface.
  • the adhesive is vaporized and disappears by heating between the two chips 11. 27, the two chips 11 are adhered to each other, and the plurality of stacked chips 11 are heated to cause the adhesive 27 to disappear, so that, similarly to the chip three-dimensional mounting method according to the first embodiment, In addition to preventing thermal degradation of the chip 11 in the semiconductor device 10, it is possible to prevent a decrease in manufacturing efficiency of the semiconductor device 10.
  • the adhesive 27 is applied to the upper surface of the chip 11 so as to avoid the end portions of the respective wirings 13, so that the amount of the adhesive 27 used is reduced. In addition, the reduction of the surface of the end portion of each wiring 13 by the reducing agent 26 can be prevented.
  • the protruding amount of the adhesive 27 from the upper surface of the chip 11 is the end of each wiring 13 and the chip 11 of the reducing agent 26 covering the end. Since it is larger than the protruding amount from the upper surface, a gap is formed above the reducing agent 26 between the chips 11 when the plurality of chips 11 are stacked. As a result, it is possible to prevent the reducing agent 26 vaporized by heating from being smoothly discharged from between the chips 11 and the residue of the reducing agent 26 remaining between the chips 11.

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Abstract

　半導体デバイスにおけるチップの熱劣化を防止するとともに、製造効率の低下を防止することができるチップの三次元実装方法を提供する。下のチップ（１１）に上のチップ（１１）を積層する際、下のチップ（１１）の上側表面における各配線（１３）の端部と上のチップ（１１）の下側表面に配された各電極パッド（１４）とを対向させ、且つ両チップ（１１）の間に加熱によって消失する還元剤を含む粘着剤（１５）を介在させて両チップ（１１）同士を粘着させる。積層された複数のチップ（１１）を加熱して粘着剤（１５）を消失させ、さらに加熱を継続して対向する各配線（１３）の端部と各電極パッド（１４）とを接合させる。

Description

チップの三次元実装方法
　本発明は、複数のチップを積層するチップの三次元実装方法に関する。
　近年、半導体デバイスのフットプリントを低減するために、複数のＩＣ基板（チップ）を積層して半導体デバイスを製造する三次元実装方法が開発されている。この三次元実装方法では、各チップにおいて当該チップを厚み方向に貫通する導体からなる配線、例えば、ＴＳＶ（Ｔｈｒｏｕｇｈ　Ｓｉｌｉｃｏｎ　Ｖｉａ）が形成され、一のチップの配線の端部が他のチップの配線の端部と接続されて三次元的に回路が形成される（例えば、特許文献１参照。）。
　この三次元実装方法では、半導体デバイスにおいて各チップの相対位置がずれるのを防止するために、新たなチップが積層される毎に加熱によって新たなチップの配線の端部と、他のチップの配線の端部とが配線自身の溶融接合や半田接合によって接続される。すなわち、チップの積層及び加熱が繰り返される。
特開２０１０−１９８８６９号公報
　上述した三次元実装方法では、チップの積層及び加熱が繰り返されるため、下層のチップは何度も熱履歴を受け、その結果、当該チップにおける配線、膜等が劣化するおそれがある。また、１つの装置、例えば、加熱装置においてチップの積層及び加熱を繰り返す必要があるため、当該加熱装置を占有する時間が長くなり、製造効率が低下するという問題もある。
　本発明の課題は、半導体デバイスにおけるチップの熱劣化を防止するとともに、製造効率の低下を防止することができるチップの三次元実装方法を提供することにある。
　上記課題を解決するために、本発明によれば、板状部材の表面に電極が形成された電子集積回路の複数のチップを積層するチップの三次元実装方法であって、一の前記チップに他の前記チップを積層する際、一の前記チップにおける前記電極と他の前記チップにおける前記電極とを対向させ、且つ両前記チップの間に加熱によって消失する粘着剤を介在させて両前記チップ同士を粘着させる積層ステップと、積層された複数の前記チップを加熱して前記粘着剤を消失させ、さらに前記対向する電極同士を接合させる接合ステップとを有することを特徴とするチップの三次元実装方法が提供される。
　本発明において、前記対向する電極の少なくとも一方は加熱によって消失する還元剤で覆われることが好ましい。
　本発明において、前記粘着剤は前記還元剤を含み、前記積層ステップにおいて前記粘着剤は両前記チップの少なくとも一方の表面を覆うことが好ましい。
　本発明において、前記積層ステップにおいて、前記粘着剤は前記対向する電極を避けるように両前記チップの少なくとも一方の表面を覆うことが好ましい。
　本発明において、前記粘着剤の前記チップの表面からの突出量は、前記電極及び当該電極を覆う前記還元剤の前記チップの表面からの突出量より大きいことが好ましい。
　本発明によれば、一のチップに他のチップを積層する際、両チップの間に加熱によって消失する粘着剤を介在させて両チップ同士を粘着させ、積層された複数のチップを加熱して粘着剤を消失させ、さらに対向する電極同士を接合させるので、各チップの相対位置がずれることがなく、半導体デバイスの製造途中に積層された複数のチップを移動させることができる。その結果、チップの積層及び加熱に用いる装置を分けることができる。すなわち、１つの装置でチップの積層及び加熱を繰り返す必要がない。また、チップの積層及び加熱をそれぞれ別の装置で実施することにより、積層及び加熱をそれぞれ１工程で行うことができる。これにより、下層のチップは何度も熱履歴を受けることがない。その結果、半導体デバイスにおけるチップの熱劣化を防止するとともに、製造効率の低下を防止することができる。
本発明の第１の実施の形態に係るチップの三次元実装方法によって製造される半導体デバイスの構成を概略的に示す断面図である。 本実施の形態に係るチップの三次元実装方法における粘着剤の塗布形態を説明するための断面図である。 本実施の形態に係るチップの三次元実装方法を説明するための工程図である。 本実施の形態に係るチップの三次元実装方法を説明するための工程図である。 本実施の形態に係るチップの三次元実装方法を説明するための工程図である。 本実施の形態に係るチップの三次元実装方法を説明するための工程図である。 本発明の第２の実施の形態に係るチップの三次元実装方法における粘着剤及び還元剤の塗布形態を説明するための断面図である。 本実施の形態に係るチップの三次元実装方法を説明するための工程図である。 本実施の形態に係るチップの三次元実装方法を説明するための工程図である。 本実施の形態に係るチップの三次元実装方法を説明するための工程図である。 本実施の形態に係るチップの三次元実装方法を説明するための工程図である。
　以下、本発明の実施の形態について図面を参照しながら説明する。
　まず、本発明の第１の実施の形態に係るチップの三次元実装方法について説明する。
　図１は、本発明の第１の実施の形態に係るチップの三次元実装方法によって製造される半導体デバイスの構成を概略的に示す断面図である。
　図１において、半導体デバイス１０は複数のＩＣ基板（チップ）１１が積層されて構成される。各チップ１１は、半導体、例えばシリコンからなる板状の基板１２と、該基板１２を厚み方向に貫通する導体からなる複数の配線１３と、基板１２の表面に露出する各配線１３の一端に対応して配置され、各配線１３の一端を覆う導体からなる薄膜状の電極パッド１４とを備える。半導体デバイス１０において、一のチップ１１における配線１３の端部（電極）は、該一のチップ１１の上に配された他のチップ１１における電極パッド１４（電極）と接合される。
　次に、本実施の形態に係るチップの三次元実装方法について説明する。この三次元実装方法では、図２に示すように、各チップ１１の間に粘着剤１５が充填されて各チップ１１同士が粘着される。
　図３Ａ及び図３Ｂ並びに図４Ａ及び図４Ｂは、本実施の形態に係るチップの三次元実装方法を説明するための工程図である。
　まず、チャンバ１６と、該チャンバ１６内に配置されたステージ１７と、粘着剤１５を供給するノズル状のディスペンサ１８と、各チップ１１を把持して移動させるアーム１９とを備えるチップ積層装置２０において、図３Ａに示すように、チップ１１をアーム１９によってステージ１７に載置し、該載置されたチップ１１の図中上側表面を全面的に覆うようにディスペンサ１８によって粘着剤１５を塗布する。ディスペンサ１８はチャンバ１６内を移動自在に構成されており、チップ１１の上側表面と平行に移動することによって粘着剤１５を当該チップ１１の上側表面へ塗布する。または、チップ１１の平行移動をステージ１７を用いて行うことにより、当該チップ１１をディスペンサ１８に対して相対的に移動させて粘着剤１５をチップ１１の上側表面へ塗布してもよい。本実施の形態では、粘着剤１５は還元剤を含み、粘着剤１５及び還元剤は加熱によって気化して消失するように成分が調整されている。
　次いで、上側表面が粘着剤１５で覆われたチップ１１へアーム１９によって他のチップ１１を重ねる。このとき、下のチップ１１の各配線１３の端部が上のチップ１１の下側表面に配された各電極パッド１４と対向するように、両チップ１１は積層されるが、両チップ１１の間には粘着剤１５が介在するため、下のチップ１１の各配線１３の端部と、上のチップ１１の各電極パッド１４とは直接接触しない。
　次いで、積層された複数のチップ１１をチップ積層装置２０からチャンバ２１と、該チャンバ２１内に配置されたステージ２２と、該ステージ２２と対向する内蓋２３と、チャンバ２１内の圧力を調整する排気装置２５とを備えるチップ加熱装置２４へ移動させる。このとき、粘着剤１５が粘着力によって両チップ１１同士を粘着しているので、積層された複数のチップ１１において各チップ１１の他のチップ１１に対する相対位置がずれることがなく、下のチップ１１の各配線１３の端部が上のチップ１１の各電極パッド１４と対向した状態が維持される。また、チップ加熱装置２４では、内蓋２３はステージ２２へ向けて移動自在に構成され、ステージ２２及び内蓋２３はそれぞれ不図示のヒータを内蔵する。その後、図３Ｂに示すように、積層された複数のチップ１１をステージ２２に載置し、該積層された複数のチップ１１の最上部のチップ１１の上側表面に内蓋２３を当接させる。
　次いで、図４Ａに示すように、積層された複数のチップ１１を内蓋２３によってステージ２２へ向けて押圧し、チャンバ２１内へ不図示のガス供給装置から不活性ガス、例えば、Ｎ２ガスを流量３ｌ／分以上で供給し、チャンバ２１内の酸素濃度を１０~１００ｐｐｍ程度まで低下させる。さらに、ステージ２２や内蓋２３のヒータを発熱させて積層された複数のチップ１１を１４０℃~２００℃へ加熱し、各チップ１１における金属表面を還元させる。
　チップ加熱装置２４のチャンバ２１内において、還元剤は約１００℃~１６０℃前後で気化し始めるが、該気化の際、チップ１１の上側表面へ露出する各配線１３の端部が還元されて該端部表面が清浄される。その後、粘着剤１５も約１５０℃前後で気化し始め、各チップ１１間の粘着剤１５が徐々に減少していき、やがて全ての粘着剤１５が消失すると、下のチップ１１の上側表面に露出する各配線１３の端部が上のチップ１１の下側表面に配された各電極パッド１４と接触する。このとき、各配線１３の端部は清浄されており、また、チャンバ２１内にはＮ２ガスが充填されてＯ２ガスが減少しているため、各配線１３の端部は直ちに酸化しない。これにより、各配線１３の端部と各電極パッド１４との接触不良を防止し、導通を確実に確保することができる。
　次いで、各チップ１１における金属表面が還元された後、チャンバ２１内の圧力を、例えば、２５~２００Ｐａ程度まで低下させ、図４Ｂに示すように、全ての粘着剤１５が消失した後も、積層された複数のチップ１１を内蓋２３によってステージ２２へ向けて押圧し続け、ステージ２２や内蓋２３のヒータによって積層された複数のチップ１１をさらに高温、例えば、２８０℃へ加熱する。このとき、各配線１３の端部が熱によって溶融して各電極パッド１４と接合される。その結果、半導体デバイス１０が構成される。その後、本処理を終了する。
　本実施の形態に係るチップの三次元実装方法によれば、チップ積層装置２０において、下のチップ１１に上のチップ１１を重ねる際、両チップ１１の間に加熱によって気化して消失する粘着剤１５を介在させて両チップ１１同士を粘着させ、積層された複数のチップ１１を加熱して粘着剤１５を消失させ、さらに相対する各配線１３の端部と各電極パッド１４とを接合させるので、各チップ１１の相対位置がずれることがなく、半導体デバイス１０の製造途中に積層された複数のチップ１１を移動させることができる。その結果、積層、加熱に用いる装置を分けることができる。すなわち、１つの装置でチップ１１の積層及び加熱を繰り返す必要がない。また、チップ１１の積層及び加熱をそれぞれチップ積層装置２０及びチップ加熱装置２４で実施することにより、積層及び加熱をそれぞれ１工程で行うことができる。これにより、下層のチップ１１は何度も熱履歴を受けることがない。その結果、半導体デバイス１０におけるチップ１１の熱劣化を防止するとともに、半導体デバイス１０の製造効率の低下を防止することができる。
　また、上述した三次元実装方法では、粘着剤１５が還元剤を含み、該粘着剤１５がチップ１１の上側表面を全面的に覆うので、下のチップ１１及び上のチップ１１の間に確実に粘着剤１５を介在させて両チップ１１を確実に粘着できるとともに、還元剤と粘着剤１５を分けて塗布する必要がないので、チップ１１の積層の効率を向上することができる。
　さらに、上述した三次元実装方法では、粘着剤１５や還元剤を加熱して気化させる際、チャンバ２１内の圧力を２５Ｐａ~２００Ｐａまで低下させるので、粘着剤１５や還元剤の気化を促進することができ、半導体デバイス１０の製造効率をより向上することができる。
　上述した三次元実装方法では、下のチップ１１の上側表面に露出する各配線１３の端部と上のチップ１１の下側表面に配された各電極パッド１４とを、各配線１３の溶融によって接合したが、下のチップ１１の上側表面に露出する各配線１３の端部に半田ボールや半田バンプを設け、半田を溶融することによって各配線１３の端部と各電極パッド１４を接合させてもよい。
　また、上述した三次元実装方法では、先に粘着剤１５を消失させて各配線１３の端部と各電極パッド１４を接合したが、先に各配線１３の端部と各電極パッド１４を接合した後、粘着剤１５を消失させてもよい。この場合、各チップ１１の上側表面へ塗布される粘着剤１５は各配線１３の端部を避けて塗布され、各配線１３の端部と各電極パッド１４との接合の際、チャンバ２１内の圧力が上昇されて粘着剤１５の気化を抑制する。
　次に、本発明の第２の実施の形態に係るチップの三次元実装方法について説明する。
　本実施の形態は、その構成、作用が上述した第１の実施の形態と基本的に同じであるので、重複した構成、作用については説明を省略し、以下に異なる構成、作用についての説明を行う。具体的には、図５に示すように、各チップ１１の間において各配線１３の端部は還元剤２６のみによって覆われ、粘着剤２７は各配線１３の端部を避けるように配される点において第１の実施の形態と異なる。
　図６Ａ及び図６Ｂ並びに図７Ａ及び図７Ｂは、本実施の形態に係るチップの三次元実装方法を説明するための工程図である。
　まず、チップ積層装置２０において、図６Ａに示すように、チップ１１をアーム１９によってステージ１７に載置し、該載置されたチップ１１の図中上側表面において、各配線１３の端部を覆うように還元剤２６を塗布し、且つ各配線１３の端部を避けるように粘着剤２７を塗布する。このとき、粘着剤２７のチップ１１の上側表面からの突出量は、各配線１３の端部及び該端部を覆う還元剤２６のチップ１１の上側表面からの突出量より大きくなるように調整される。なお、本実施の形態でも、還元剤２６及び粘着剤２７は加熱によって気化して消失するように成分が調整されている。
　次いで、上側表面に還元剤２６及び粘着剤２７が塗布されたチップ１１へアーム１９によって他のチップ１１を重ねる。このとき、下のチップ１１の各配線１３の端部が上のチップ１１の下側表面に配された各電極パッド１４と対向するように、両チップ１１は積層されるが、両チップ１１の間には還元剤２６及び粘着剤２７が介在するため、下のチップ１１の各配線１３の端部と、上のチップ１１の各電極パッド１４とは直接接触しない。
　次いで、積層された複数のチップ１１をチップ積層装置２０からチップ加熱装置２４へ移動させる。このとき、粘着剤２７が粘着力によって両チップ１１同士を粘着しているので、積層された複数のチップ１１において各チップ１１の他のチップ１１に対する相対位置がずれることがなく、下のチップ１１の各配線１３の端部が上のチップ１１の各電極パッド１４と対向した状態が維持される。その後、図６Ｂに示すように、積層された複数のチップ１１をステージ２２に載置し、該積層された複数のチップ１１の最上部のチップ１１の上側表面に内蓋２３を当接させる。
　次いで、図７Ａに示すように、積層された複数のチップ１１を内蓋２３によってステージ２２へ向けて押圧し、Ｎ２ガスの供給量、積層された複数のチップ１１の温度、及びチャンバ２１内の圧力を第１の実施の形態と同じ条件に設定する。このとき、還元剤２６は約１００~１６０℃前後で気化し始め、各配線１３の端部を還元して該端部の表面を清浄する。その後、粘着剤２７も約１５０℃前後で気化し始め、やがて全ての還元剤２６及び粘着剤２７が消失すると、下のチップ１１の上側表面に露出する各配線１３の端部が上のチップ１１の下側表面に配された各電極パッド１４と接触する。
　次いで、図７Ｂに示すように、全ての還元剤２６及び粘着剤２７が消失した後も、積層された複数のチップ１１を内蓋２３によってステージ２２へ向けて押圧し続け、ステージ２２や内蓋２３のヒータによって積層された複数のチップ１１をさらに高温、例えば、２８０℃へ加熱する。このとき、各配線１３の端部が熱によって溶融して各電極パッド１４と接合される。その結果、半導体デバイス１０が構成される。その後、本処理を終了する。
　本実施の形態に係るチップの三次元実装方法によれば、チップ積層装置２０において、下のチップ１１に上のチップ１１を重ねる際、両チップ１１の間に加熱によって気化して消失する粘着剤２７を介在させて両チップ１１同士を粘着させ、積層された複数のチップ１１を加熱して粘着剤２７を消失させるので、第１の実施の形態に係るチップの三次元実装方法と同様に、半導体デバイス１０におけるチップ１１の熱劣化を防止するとともに、半導体デバイス１０の製造効率の低下を防止することができる。
　また、本実施の形態に係るチップの三次元実装方法では、粘着剤２７は各配線１３の端部を避けるようにチップ１１の上側表面に塗布されるので、粘着剤２７の使用量を削減することができるとともに、還元剤２６による各配線１３の端部の表面の還元を阻害するのを無くすことができる。
　さらに、本実施の形態に係るチップの三次元実装方法では、粘着剤２７のチップ１１の上側表面からの突出量は、各配線１３の端部及び該端部を覆う還元剤２６のチップ１１の上側表面からの突出量より大きいので、複数のチップ１１を積層した際に、各チップ１１の間において還元剤２６の上方に隙間が生じる。その結果、加熱によって気化した還元剤２６が円滑に各チップ１１間から排出されて各チップ１１間に還元剤２６の残渣が残るのを防止することができる。
　以上、本発明について、上記各実施の形態を用いて説明したが、本発明は上記各実施の形態に限定されるものではない。
１０　半導体デバイス
１１　チップ
１３　配線
１４　電極パッド
１５，２７　粘着剤
２６　還元剤

Claims (5)

  1. 　板状部材の表面に電極が形成された電子集積回路の複数のチップを積層するチップの三次元実装方法であって、
    　一の前記チップに他の前記チップを積層する際、一の前記チップにおける前記電極と他の前記チップにおける前記電極とを対向させ、且つ両前記チップの間に加熱によって消失する粘着剤を介在させて両前記チップ同士を粘着させる積層ステップと、
    　積層された複数の前記チップを加熱して前記粘着剤を消失させ、さらに前記対向する電極同士を接合させる接合ステップとを有することを特徴とするチップの三次元実装方法。
  2. 　前記対向する電極の少なくとも一方は加熱によって消失する還元剤で覆われることを特徴とする請求項１記載のチップの三次元実装方法。
  3. 　前記粘着剤は前記還元剤を含み、前記積層ステップにおいて前記粘着剤は両前記チップの少なくとも一方の表面を覆うことを特徴とする請求項２記載のチップの三次元実装方法。
  4. 　前記積層ステップにおいて、前記粘着剤は前記対向する電極を避けるように両前記チップの少なくとも一方の表面を覆うことを特徴とする請求項２記載のチップの三次元実装方法。
  5. 　前記粘着剤の前記チップの表面からの突出量は、前記電極及び当該電極を覆う前記還元剤の前記チップの表面からの突出量より大きいことを特徴とする請求項４記載のチップの三次元実装方法。
PCT/JP2012/070869 2011-09-27 2012-08-10 チップの三次元実装方法 WO2013046992A1 (ja)

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CN113169121A (zh) * 2018-08-27 2021-07-23 欧米克 将板分离成单个部件的方法

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JPH02235367A (ja) * 1989-01-26 1990-09-18 Siemens Ag 半導体デバイス
JP2003282819A (ja) * 2002-03-27 2003-10-03 Seiko Epson Corp 半導体装置の製造方法
JP2004039667A (ja) * 2002-06-28 2004-02-05 Sekisui Chem Co Ltd スルーホールが形成された半導体素子の製造方法、及び、半導体パッケージの製造方法
JP2010199207A (ja) * 2009-02-24 2010-09-09 Panasonic Corp 半導体装置の組み立て方法

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JPH02235367A (ja) * 1989-01-26 1990-09-18 Siemens Ag 半導体デバイス
JP2003282819A (ja) * 2002-03-27 2003-10-03 Seiko Epson Corp 半導体装置の製造方法
JP2004039667A (ja) * 2002-06-28 2004-02-05 Sekisui Chem Co Ltd スルーホールが形成された半導体素子の製造方法、及び、半導体パッケージの製造方法
JP2010199207A (ja) * 2009-02-24 2010-09-09 Panasonic Corp 半導体装置の組み立て方法

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Publication number Priority date Publication date Assignee Title
CN113169121A (zh) * 2018-08-27 2021-07-23 欧米克 将板分离成单个部件的方法

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