WO2013031944A1 - 圧電装置 - Google Patents

圧電装置 Download PDF

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Publication number
WO2013031944A1
WO2013031944A1 PCT/JP2012/072152 JP2012072152W WO2013031944A1 WO 2013031944 A1 WO2013031944 A1 WO 2013031944A1 JP 2012072152 W JP2012072152 W JP 2012072152W WO 2013031944 A1 WO2013031944 A1 WO 2013031944A1
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WO
WIPO (PCT)
Prior art keywords
element mounting
region
metal pattern
piezoelectric device
integrated circuit
Prior art date
Application number
PCT/JP2012/072152
Other languages
English (en)
French (fr)
Inventor
高弘 新山
弘伸 新徳
亮磨 笹川
順平 小村
Original Assignee
京セラクリスタルデバイス株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2011188447A external-priority patent/JP5767061B2/ja
Priority claimed from JP2012102901A external-priority patent/JP5828480B2/ja
Application filed by 京セラクリスタルデバイス株式会社 filed Critical 京セラクリスタルデバイス株式会社
Priority to KR1020147001443A priority Critical patent/KR101955955B1/ko
Priority to US13/697,434 priority patent/US9006958B2/en
Priority to CN201280034749.7A priority patent/CN103650335B/zh
Publication of WO2013031944A1 publication Critical patent/WO2013031944A1/ja

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Definitions

  • the present invention relates to a piezoelectric device used in an electronic device or the like.
  • a conventional piezoelectric device includes an element mounting member, a piezoelectric element accommodated in a first recess of the element mounting member, and an integrated circuit element accommodated in a second recess of the element mounting member.
  • the element mounting member is provided with a metal pattern for mounting the integrated circuit element.
  • the integrated circuit element is bonded to the metal pattern by solder bumps.
  • the solder bumps are cooled and solidified after being melted in the heating process.
  • a heating process of about 250 ° C. such as reflow may be performed a plurality of times, and the solder bump may be remelted.
  • the re-melted solder bump spreads on the metal pattern, and the reliability related to the bonding between the integrated circuit element and the metal pattern may be reduced.
  • the piezoelectric device electrically connects an element mounting member, a piezoelectric element mounted on the element mounting member, a metal pattern formed on the surface of the element mounting member, and a metal pattern by solder bumps. Connected integrated circuit elements.
  • the metal pattern includes an element mounting area and a routing area.
  • the integrated circuit element is electrically connected to the element mounting area of the metal pattern.
  • the metal pattern has a convex portion provided between the element mounting region and the routing region, and at least the surface portion of the convex portion is made of a metal oxide.
  • the piezoelectric device is provided on an element mounting member, a piezoelectric element mounted on the element mounting member, and a surface of the element mounting member, and includes an element mounting region and a wiring region.
  • the metal pattern further includes a solder flow prevention region provided between the element mounting region and the wiring region. The solder flow prevention region is provided at a position overlapping the conductor pattern of the integrated circuit component or inside the conductor pattern in a plan view.
  • the spread of the melted solder bumps at the convex portion having at least a surface portion made of a metal oxide having low solder wettability such as nickel (Ni) can be suppressed.
  • a metal oxide having low solder wettability such as nickel (Ni)
  • the possibility that the solder contacts the conductor pattern is reduced, and the possibility that the plurality of electrode pads of the integrated circuit element is short-circuited is reduced.
  • FIG. 2 is a bottom view of an element mounting member of the piezoelectric device shown in FIG. 1.
  • FIG. 3 is an enlarged view of a portion indicated by a symbol B in FIG. 2.
  • FIG. 4 is a longitudinal sectional view taken along line YY in FIG. 3. It is a longitudinal cross-sectional view which shows the piezoelectric device in the 2nd Embodiment of this invention.
  • 6A is a plan view showing an integrated circuit element in the piezoelectric device shown in FIG. 5, and FIG. 6B is an example of electrical connection of the integrated circuit element in the piezoelectric device shown in FIG. FIG. It is a longitudinal cross-sectional view which shows the joining state of the connection part in the piezoelectric apparatus shown by FIG.
  • the piezoelectric device 100 As shown in FIG. 1, the piezoelectric device 100 according to the first embodiment of the present invention includes an element mounting member 110, a piezoelectric element 120 and an integrated circuit element 130 mounted on the element mounting member 110, and a lid member. 150.
  • FIG. 1 is a longitudinal sectional view taken along line AA of the piezoelectric device shown in FIG.
  • the element mounting member 110 includes a substrate portion 111, a first frame portion 112 provided on one main surface of the substrate portion 111, and a second frame portion 113 provided on the other main surface of the substrate portion 111. Is included.
  • the substrate portion 111, the first frame portion 112, and the second frame portion 113 constituting the element mounting member 110 are made of a ceramic material such as glass-ceramics or alumina ceramics.
  • the substrate 111 has a piezoelectric element mounting pattern 114 for mounting the piezoelectric element 120 on one main surface, and a metal pattern 118 for mounting the integrated circuit element 130 on the other main surface. ing.
  • the other main surface is also provided with a monitor terminal 123 for inspecting the piezoelectric element 120 in the manufacturing process of the piezoelectric device 100.
  • six metal patterns 118 on the other main surface of the substrate unit 111 are arranged in, for example, 3 rows and 2 columns. In FIG. 1, a cross-sectional view cut across one row of the metal pattern 118 is shown.
  • electrode pads 134 of an integrated circuit element 130 to be described later are bonded via solder bumps 132.
  • an inner layer wiring (not shown) is provided inside the substrate portion 111, and the piezoelectric element mounting pattern 114 and the metal pattern 118 are electrically connected via the inner layer wiring (not shown). .
  • the element mounting member 110 has a first concave portion K1 surrounded by the substrate portion 111 and the first frame portion 112.
  • the piezoelectric element 120 is accommodated in the first recess K1.
  • the first recess K1 in which the piezoelectric element 120 is accommodated is hermetically sealed by the lid member 150.
  • the element mounting member 110 has a second concave portion K2 surrounded by the substrate portion 111 and the second frame portion 113.
  • the integrated circuit element 130 is accommodated in the second recess K2.
  • a plurality of external connection terminals 116 are provided at the four corners of the second frame portion 113.
  • the plurality of external connection terminals 116 function as a VCC terminal, a VCON terminal, an OUT terminal, and a ground terminal, respectively.
  • the power supply voltage is applied to the VCC terminal.
  • a signal (that is, a control signal) for controlling the output state of the integrated circuit element 130 is applied to the VCON terminal.
  • a signal output from the integrated circuit element 130 is applied to the OUT terminal.
  • a ground voltage is applied to the ground terminal.
  • the piezoelectric element 120 has a structure including excitation electrodes (not shown) and connection electrodes (not shown) on both main surfaces of the piezoelectric element plate.
  • the connection electrode (not shown) of the piezoelectric element 120 is connected to the piezoelectric element mounting pattern 114 disposed on the element mounting member 110 via the conductive adhesive 121.
  • the piezoelectric element 120 is excited by thickness shear vibration having a predetermined frequency.
  • quartz is used as the piezoelectric element plate.
  • the integrated circuit element 130 includes at least an oscillation circuit.
  • an electrode pad 134 is formed on a surface on which a circuit is formed.
  • the electrode pad 134 is bonded to the metal pattern 118 disposed on the element mounting member 110 via the solder bump 132.
  • a resin 140 is filled between the electrode pads 134 of the integrated circuit element 130 and the metal pattern 118 disposed on the element mounting member 110.
  • the solder bump 132 is formed by screen printing on the electrode pad 134 on the surface of the integrated circuit element 130 where the circuit is formed, and the bump diameter is about 80 to 100 ⁇ m and the height is about 60 to 100 ⁇ m, for example. Is formed.
  • the solder bumps 132 used in this embodiment are, for example, lead-free solder having a Sn—Cu—Ni based composition. *
  • the lid member 150 hermetically seals the first concave portion K1 formed by the substrate portion 111 and the first frame portion 112.
  • the material of the lid member 150 is made of 42 alloy, Kovar, phosphor bronze, or the like.
  • the metal pattern 118 arranged on the element mounting member 110 of the piezoelectric device 100 includes an element mounting area 118a and a routing area 118b. Solder bumps 132 are electrically connected to the element mounting region 118a.
  • the routing area 118b is connected to an inner layer wiring (not shown) of the element mounting member 110.
  • the routing region 118b connected to the piezoelectric element mounting pattern 114 is also connected to the monitor terminal 123 via an inner layer wiring (not shown) or the like.
  • the metal pattern 118 has a convex portion 119 provided between the element mounting region 118a and the routing region 118b, and at least the surface portion of the convex portion 119 is made of metal. Made of oxide.
  • FIG. 4 shows an enlarged view of a cross section of the metal pattern 118 of the piezoelectric device 100 according to this embodiment.
  • the metal pattern 118 in the present embodiment is configured to include a convex portion 119 provided between the element mounting region 118a and the routing region 118b.
  • the metal pattern 118 has a three-layer structure, for example, molybdenum (Mo) is formed in the lower layer, nickel (Ni) is formed in the intermediate layer, and gold (Au) is formed in the upper layer, for example.
  • Mo molybdenum
  • Ni nickel
  • Au gold
  • the convex portion 119 of the piezoelectric device 100 in this embodiment irradiates the metal pattern 118 with a laser to cut, for example, nickel (Ni) as an intermediate layer of the metal pattern 118 and gold (Au) as an upper layer.
  • the metal pattern 118 is formed by providing the groove 117.
  • nickel (Ni) in the intermediate layer of the metal pattern 118 is scraped with a laser, and the metal oxide of the convex portion 119 reacts with air by generating heat.
  • the convex portion 119 in the present embodiment has a structure having an element mounting area side surface 119a on the element mounting area 118a side of the metal pattern 118 and a routing area side surface 119b on the routing area 118b side.
  • FIG. 3 is an enlarged view of the upper surface of the metal pattern 118 of the piezoelectric device 100 according to this embodiment.
  • the metal pattern 118 according to the present embodiment includes a convex portion 119 provided between the element mounting region 118a and the routing region 118b, and a groove portion 117 formed on the routing region 118b side of the convex portion 119.
  • the convex part 119 of the piezoelectric device 100 in this embodiment the element mounting area side surface 119a formed on the element mounting area 118a side has a plurality of recesses 119c, and each of the plurality of recesses 119c is a flat surface.
  • the groove 117 has a structure that is recessed so as to narrow toward the direction of the lead-out region 118b when viewed.
  • the groove 117 is formed with a pattern having a plurality of minute irregularities.
  • the plurality of minute irregularities of the groove 117 has a curved pattern that prevents the flow of solder when the solder flows out from the element mounting region 118a toward the region 118b in plan view.
  • the convex portion 119 of the piezoelectric device 100 has a height of, for example, about 1 to 2 ⁇ m, a depth of the groove portion 117, for example, about 0.5 to 1 ⁇ m, and a width of the groove portion 117, for example, about 30 to 50 ⁇ m. It is.
  • the convex portion 119 of the piezoelectric device 100 in the present embodiment is formed by, for example, laser irradiation
  • the height or inclination is adjusted by changing the spot diameter or output intensity of the laser.
  • the shape of the plurality of recesses 119c and the width or depth of the groove 117 can be adjusted by changing the laser spot diameter or output intensity.
  • the laser for example, a carbon dioxide laser, a YAG laser, a YVO4 laser, a semiconductor laser, an excimer laser, or the like is used.
  • the metal pattern 118 disposed on the element mounting member 110 of the piezoelectric device 100 according to the present embodiment has the convex portion 119 provided between the element mounting area 118a and the routing area 118b. At least a surface portion of the portion 119 is made of a metal oxide.
  • the metal oxide of the convex portion 119 is made of an oxidized metal having low solder wettability such as nickel (Ni). Can be suppressed at the convex portion 119.
  • the piezoelectric device 100 according to the present embodiment can secure the area of the joint portion between the electrode pad 134 of the integrated circuit element 130 and the solder bump 132, and can suppress a decrease in the joint strength of the solder bump 132.
  • the convex portion 119 of the piezoelectric device 100 in the present embodiment has an element mounting region side surface 119a, and the element mounting region side surface 119a has a plurality of concave portions 119c, and each of the plurality of concave portions 119c is in plan view. It is recessed so as to narrow in the direction of the routing region 118b. Thereby, when the solder bump 132 melts in the heating process and expands from the element mounting region 118a, the spread of the solder can be suppressed by the surface tension of the solder.
  • the convex portion 119 of the piezoelectric device 100 in this embodiment has an element mounting region side surface 119a and a routing region side surface 119b, and the element mounting region side surface 119a is routed and steeper than the side surface 119b.
  • the convex part 119 of the piezoelectric device 100 in this embodiment can suppress the expansion of the solder bump 132.
  • the metal pattern 118 of the piezoelectric device 100 according to the present embodiment has a groove portion 117 provided on the side of the routing region 118b with respect to the convex portion 119.
  • the metal pattern 118 of the piezoelectric device 100 according to the embodiment of the present invention forms the solder bump 132 at the groove 117 even if the solder forming the solder bump 132 does not stop at the element mounting region side surface 119a of the convex portion 119. Therefore, it is possible to prevent the solder from spreading to the lead-out region 118b.
  • the groove 117 of the piezoelectric device 100 has a plurality of minute irregularities, so that even if the solder bump 132 extends beyond the element mounting region side surface 119a.
  • the spread of the solder bumps 132 can be suppressed by a plurality of minute irregularities in the groove 117.
  • the groove 117 in the present embodiment is formed such that a plurality of minute irregularities are formed in a direction to suppress the flow of solder, and the solder flow is stopped by the plurality of minute irregularities.
  • FIG. 5 is a cross-sectional view similar to FIG. 1 showing a piezoelectric device 201 according to the second embodiment. Note that in the second embodiment, configurations that are the same as or similar to the configurations of the first embodiment may be assigned the same reference numerals as in the first embodiment, and descriptions thereof may be omitted.
  • the piezoelectric device 201 is different from the piezoelectric device 100 of the first embodiment only in having a conductor pattern 124.
  • the piezoelectric device 201 is not provided with the resin 140, but the piezoelectric device 201 may also be provided with the resin 140.
  • the conductor pattern 124 is provided on the edge of the lower surface of the integrated circuit element 130 (the surface on the side joined by the solder bumps 132).
  • the combination of the integrated circuit element 130 and the conductor pattern 124 may be referred to as an integrated circuit component 131.
  • the plurality of electrode pads 134 and the conductor pattern 124 are indicated by broken lines in a state where a part of the integrated circuit element 130 is transmitted.
  • the conductor pattern 124 contributes to a reduction in deflection of the wafer.
  • the conductor pattern 124 is grounded or electrically floated.
  • the positional relationship between the plurality of electrode pads 134 and the conductor pattern 124 of the integrated circuit element 130 in the piezoelectric device 201 of the present embodiment, and the convex portions 119 of the metal pattern 118 provided on the upper surface of the substrate 111 is illustrated. This will be described with reference to FIG.
  • the convex portion 119, the metal oxide or the groove portion 117 having relatively low wettability with the solder, or a combination thereof may be referred to as a solder flow prevention region 151.
  • the integrated circuit component 131 is provided in the second recess K2. Further, the plurality of electrode pads 134 of the integrated circuit element 130 are located in a region near the long side of the second recess K2. The conductor pattern 124 provided on the edge of the lower surface of the integrated circuit element 130 is provided outside the plurality of electrode pads 134 so as to surround the plurality of electrode pads 134.
  • the solder flow prevention region 151 is formed at a position overlapping the conductor pattern 124 or inside the conductor pattern 124. For example, at least an edge of the solder flow prevention region 151 facing the inside of the element mounting member 110 is formed inside the conductor pattern 124.
  • the piezoelectric device 201 of this embodiment can stop the solder flow by the solder flow prevention region 151 of the metal pattern 118 on the inner side of the conductor pattern 124 of the integrated circuit element 130, the integrated circuit element 130 is formed by the conductor pattern 124. The possibility that the plurality of electrode pads 134 are short-circuited is reduced.
  • the metal pattern 118 has a three-layer structure, but may have a multilayer structure having a four-layer structure, for example.
  • the composition of the three-layer structure of the metal pattern 118 is, for example, a structure in which molybdenum (Mo) is formed in the lower layer, nickel (Ni) is formed in the intermediate layer, and gold (Au) is formed in the upper layer, but is not limited thereto.
  • Mo molybdenum
  • Ni nickel
  • Au gold
  • the metal pattern 118 may be a combination of tungsten (W) as a lower layer, copper (Cu) as an intermediate layer, and silver (Ag) as an upper layer.
  • the piezoelectric element 120 mounted in the first recess K1 of the piezoelectric device 100 or 201 shown in the embodiment includes excitation electrodes and connection electrodes on both main surfaces of a rectangular piezoelectric element plate in plan view.
  • the present invention is not limited to this.
  • a piezoelectric element having a circular shape in plan view or a piezoelectric element in which various electrodes are provided on a tuning fork-shaped piezoelectric element plate may be used.
  • An element may be used.
  • solder flow prevention region 151 may be formed by forming an insulating layer or a metal layer on the metal pattern 118 and providing a convex portion, for example, in addition to being formed by laser irradiation.
  • the insulating layer examples include a ceramic coat (for example, alumina coat) or a resin.
  • the ceramic coat or resin is provided on the metal pattern 118 by screen printing.
  • the ceramic coat or the resin can be formed simultaneously by screen printing with a plurality of insulating layers, so that the manufacturing cost can be reduced. Since the insulating layer has lower wettability with the solder than the metal pattern, it is possible to further reduce the flow of solder.
  • the metal layer is formed of, for example, an Al film or a Cr film by a vacuum printing method such as sputtering. Since an Al film, a Cr film, or the like can be formed by sputtering a plurality of metal layers at the same time, the manufacturing cost can be reduced.
  • the metal pattern 118 can be formed by cutting with a laser, so that it is not necessary to separately prepare a material for forming the protrusion, and productivity can be improved by reducing the number of members. Become. Further, in the laser forming method, since the convex portion is formed by post-processing on the element mounting member 110 on which the metal pattern 118 is formed, the solder flow prevention region 151 is formed corresponding to the size of the integrated circuit element 130, for example. The degree of freedom in manufacturing increases, such as being able to determine the position.

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Abstract

　圧電装置１００は、素子搭載部材１１０と、素子搭載部材１１０に搭載されている圧電素子１２０と、素子搭載部材１１０の表面に形成されており、素子搭載領域１１８ａおよび引き回し領域１１８ｂを含んでいる金属パターン１１８と、半田バンプ１３２によって金属パターン１１８の素子搭載領域１１８ａに電気的に接続されている集積回路素子１３０とを備え、金属パターン１１８が素子搭載領域１１８ａと引き回し領域１１８ｂとの間に設けられた凸部１１９を有しており、凸部１１９の少なくとも表面部分が金属酸化物から成る。

Description

圧電装置
　本発明は、電子機器等に用いられる圧電装置に関するものである。
　従来より、例えば携帯用の電子機器には、各種圧電装置が用いられている。従来の圧電装置は、素子搭載部材と、素子搭載部材の第１の凹部に収容された圧電素子と、素子搭載部材の第２の凹部に収容された集積回路素子とを含んでいる。
　素子搭載部材には、集積回路素子を搭載するための金属パターンが設けられている。集積回路素子は、半田バンプによって金属パターンに接合されている。半田バンプは、加熱工程で溶融された後に、冷却固化される。
特開２００９－２６７８６６号公報
　しかしながら、従来の圧電装置は、例えば、半田バンプによる集積回路素子と金属パターンとの接合後にリフロー等の２５０℃程度の加熱工程を複数回行う場合があり半田バンプが再溶融することがあった。その結果、再溶融した半田バンプが金属パターン上に拡がり、集積回路素子と金属パターンとの接合に関する信頼性が低下する場合があった。
　本発明の第１の態様による圧電装置は素子搭載部材と、素子搭載部材に搭載されている圧電素子と、素子搭載部材の表面に形成された金属パターンと、半田バンプによって金属パターンに電気的に接続されている集積回路素子とを含んでいる。金属パターンは、素子搭載領域および引き回し領域を含んでいる。集積回路素子は、金属パターンの素子搭載領域に電気的に接続されている。金属パターンは、素子搭載領域と引き回し領域との間に設けられた凸部を有しており、凸部の少なくとも表面部分が金属酸化物から成る。
　本発明の第２の態様による圧電装置は、素子搭載部材と、素子搭載部材に搭載されている圧電素子と、素子搭載部材の表面に設けられており、素子搭載領域および配線領域を含んでいる金属パターンと、金属パターンの素子搭載領域に半田バンプによって電気的に接続されており、集積回路素子と集積回路素子の下面の縁部に設けられた導体パターンとを含む集積回路部品とを含んでいる。金属パターンは、素子搭載領域と配線領域との間に設けられた半田流れ防止領域をさらに含んでいる。半田流れ防止領域は、平面視において集積回路部品の導体パターンに重なる位置かまたは導体パターンよりも内側に設けられている。
　本発明の第１の態様による圧電装置では、例えばニッケル（Ｎｉ）などの半田濡れ性の低い金属酸化物から成る少なくとも表面部分を有する凸部において溶融された半田バンプの拡がりが抑えられる。その結果、集積回路素子と金属パターンとの接合に関する信頼性が向上する。
　本発明の第２の態様による圧電装置では、半田が導体パターンに接触する可能性が低減されており、集積回路素子の複数の電極パッドが短絡する可能性が低減されている。
本発明の第１の実施形態における圧電装置の一例を示した断面図である。 図１に示された圧電装置の素子搭載部材の下面図である。 図２において符号Ｂによって示された部分の拡大図である。 図３のＹ－Ｙ線縦断面図である。 本発明の第２の実施形態における圧電装置を示す縦断面図である。 図６（ａ）は図５に示された圧電装置における集積回路素子を示す平面図であり、図６（ｂ）は図５に示された圧電装置における集積回路素子の電気的な接続の例を示す平面図である。 図５に示された圧電装置における接続部の接合状態を示す縦断面図である。
　以下、本発明の例示的な実施形態について図面を参照して説明する。
（第１の実施形態）
　図１に示されているように、本発明の第１の実施形態における圧電装置１００は、素子搭載部材１１０と、素子搭載部材１１０に搭載された圧電素子１２０および集積回路素子１３０と、蓋部材１５０とを含んでいる。なお、図１は、図２に示された圧電装置のＡ―Ａにおける縦断面図を示している。
　素子搭載部材１１０は、基板部１１１と、基板部１１１の一方の主面に設けられた第一の枠部１１２と、基板部１１１の他方の主面に設けられた第二の枠部１１３とを含んでいる。素子搭載部材１１０を構成する基板部１１１と、第一の枠部１１２および第二の枠部１１３は、例えば、ガラス－セラミックス、アルミナセラミックス等のセラミック材料からなる。
　また、基板部１１１は、一方の主面に圧電素子１２０を搭載するための圧電素子搭載用パターン１１４が配置され、他方の主面に集積回路素子１３０を搭載するための金属パターン１１８が配置されている。なお、他方の主面には、圧電装置１００の製造工程において圧電素子１２０の検査を行うためのモニター用端子１２３も設けられている。また、図２に示されているように、基板部１１１の他方の主面の金属パターン１１８は、例えば３行２列に６個配置されている。図１では、金属パターン１１８の１列を横切って切断した断面図を示している。素子搭載部材１１０に配置された金属パターン１１８は、後述する集積回路素子１３０の電極パッド１３４が半田バンプ１３２を介して接合されている。また、基板部１１１の内部には、内層配線（図示せず）が設けられ、圧電素子搭載用パターン１１４と金属パターン１１８とが内層配線（図示せず）を介して電気的に接続されている。
　また、素子搭載部材１１０は、基板部１１１および第一の枠部１１２によって囲まれた第一の凹部Ｋ１を有している。第一の凹部Ｋ１には、圧電素子１２０が収容されている。圧電素子１２０が収容されている第一の凹部Ｋ１は、蓋部材１５０によって気密封止されている。
　また、素子搭載部材１１０は、基板部１１１および第二の枠部１１３によって囲まれた第二の凹部Ｋ２を有している。第二の凹部Ｋ２には、集積回路素子１３０が収容されている。第二の枠部１１３の四隅には、複数の外部接続端子１１６が設けられている。複数の外部接続端子１１６は、それぞれＶＣＣ端子、ＶＣＯＮ端子、ＯＵＴ端子、グランド端子として機能する。
　ＶＣＣ端子は、電源電圧が印加される。ＶＣＯＮ端子は、集積回路素子１３０の出力状態を制御するための信号（すなわち、制御信号）が印加される。ＯＵＴ端子は、集積回路素子１３０から出力された信号が印加される。グランド端子は、接地電圧が印加される。
　圧電素子１２０は、圧電素板の両主面に励振用電極（図示せず）と接続用電極（図示せず）を備える構造となっている。また、圧電素子１２０の接続用電極（図示せず）は、導電性接着剤１２１を介して素子搭載部材１１０に配置された圧電素子搭載用パターン１１４に接続されている。また、圧電素子１２０は、所定の結晶軸でカットした圧電素板に外部からの変動電圧が印加されると、所定の周波数の厚みすべり振動が励振される。圧電素板としては、例えば水晶が用いられる。
　集積回路素子１３０は、少なくとも発振回路を備える構成となっている。集積回路素子１３０は、回路が形成された面に電極パッド１３４が形成される。電極パッド１３４は、素子搭載部材１１０に配置された金属パターン１１８に、半田バンプ１３２を介して接合されている。また、集積回路素子１３０の電極パッド１３４と、素子搭載部材１１０に配置された金属パターン１１８との間には、樹脂１４０が充填されている。
　半田バンプ１３２は、集積回路素子１３０の回路の形成された面の電極パッド１３４上にスクリーン印刷により形成され、バンプ径が例えば８０～１００μｍ程度で、高さが例えば６０～１００μｍ程度の大きさで形成されている。また、本実施形態に用いられる半田バンプ１３２は、例えばＳｎ―Ｃｕ－Ｎｉ系の組成を持つ鉛フリー半田が用いられる。　
　蓋部材１５０は、基板部１１１と第一の枠部１１２で形成された第一の凹部Ｋ１を気密封止している。蓋部材１５０の材質は、４２アロイまたはコバール、リン青銅等からなる。
　ここで、図１、図２に示すように、圧電装置１００の素子搭載部材１１０に配置された金属パターン１１８は、素子搭載領域１１８ａおよび引き回し領域１１８ｂを備えている。素子搭載領域１１８ａには、半田バンプ１３２が電気的に接続されている。
　引き回し領域１１８ｂは、素子搭載部材１１０の内層配線（図示せず）に接続されている。そして、例えば、６つの引き回し領域１１８ｂのうち４つは、内層配線（図示せず）等を介して４つの外部接続端子１１６に接続され、残りの２つは、内層配線（図示せず）等を介して圧電素子搭載用パターン１１４に接続されている。なお、圧電素子搭載用パターン１１４に接続されている引き回し領域１１８ｂは、内層配線（図示せず）等を介してモニター用端子１２３とも接続されている。
　また、金属パターン１１８は、図３、図４に示すように、素子搭載領域１１８ａと引き回し領域１１８ｂとの間に設けられた凸部１１９を有しており、凸部１１９の少なくとも表面部分が金属酸化物から成っている。これにより、本実施形態における圧電装置１００は、凸部１１９がダムとなる物理的作用と金属酸化物が濡れにくい化学的作用により半田バンプ１３２を形成する半田の拡がりを抑えることができる。
　また、図４は、本実施形態における圧電装置１００の金属パターン１１８の断面の拡大図を示す。本実施形態における金属パターン１１８は、素子搭載領域１１８ａと引き回し領域１１８ｂとの間に設けられた凸部１１９を備える構成となっている。金属パターン１１８は、３層構造になっており、例えば下層にモリブデン（Ｍｏ）が形成され、例えば中間層にニッケル（Ｎｉ）が形成され、例えば上層に金（Ａｕ）が形成されている。
　このような本実施形態における圧電装置１００の凸部１１９は、金属パターン１１８にレーザを照射して、金属パターン１１８の中間層の例えばニッケル（Ｎｉ）と上層の例えば金（Ａｕ）をカットして、金属パターン１１８に溝部１１７を設けることで形成される。凸部１１９の金属酸化物は、金属パターン１１８の中間層の例えばニッケル（Ｎｉ）がレーザで削られ、また発熱することにより空気と反応し生成される。また、本実施形態における凸部１１９は、金属パターン１１８の素子搭載領域１１８ａ側に素子搭載領域側面１１９ａを有し、引き回し領域１１８ｂ側に引き回し領域側面１１９ｂを有する構造になっている。
　また、図３は、本実施形態における圧電装置１００の金属パターン１１８の上面の拡大図を示す。本実施形態における金属パターン１１８は、素子搭載領域１１８ａと引き回し領域１１８ｂとの間に設けられた凸部１１９と、凸部１１９よりも引き回し領域１１８ｂ側に形成された溝部１１７を備える構成となっている。ここで、本実施形態における圧電装置１００の凸部１１９は、素子搭載領域１１８ａ側に形成された素子搭載領域側面１１９ａが、複数の凹部１１９ｃを有しており、複数の凹部１１９ｃのそれぞれが平面視において引き回し領域１１８ｂの方向へ向かって狭まるように凹んでいる構造となっている。また、溝部１１７は、複数の微少な凹凸による模様が形成されている。溝部１１７の複数の微小な凹凸は、平面視において、仮に半田が素子搭載領域１１８ａから引き回し領域１１８ｂの方向へ流れ出した場合にその流れが妨げられるような曲線模様を有している。
　本実施形態における圧電装置１００の凸部１１９は、高さが例えば１～２μｍ程度であり、溝部１１７の深さが例えば０．５～１μｍ程度であり、溝部１１７の幅が例えば３０～５０μｍ程度である。また、本実施形態における圧電装置１００の凸部１１９は、例えばレーザー照射によって形成される場合には、レーザのスポット径または出力強度などを変えることで高さまたは傾きについて調整される。同様に、複数の凹部１１９ｃの形状、溝部１１７の幅または深さについても、レーザのスポット径または出力強度などを変えることで調整することができる。ここで、レーザとしては、例えば、炭酸ガスレーザ、ＹＡＧレーザ、ＹＶＯ４レーザ、半導体レーザ、またはエキシマレーザ等が用いられる。
　このように、本実施形態における圧電装置１００の素子搭載部材１１０に配置された金属パターン１１８は、素子搭載領域１１８ａと引き回し領域１１８ｂとの間に設けられた凸部１１９を有しており、凸部１１９の少なくとも表面部分が金属酸化物から成っている。これにより、本発明の実施形態における圧電装置１００は、凸部１１９の金属酸化物が例えばニッケル（Ｎｉ）などの半田濡れ性の低い酸化された金属からなることから、溶融した半田バンプ１３２の拡がりを凸部１１９において抑えることができる。その結果、本実施形態における圧電装置１００は、集積回路素子１３０の電極パッド１３４と半田バンプ１３２との接合部分の面積を確保でき、半田バンプ１３２の接合強度の低下を抑えることができる。
　また、本実施形態における圧電装置１００の凸部１１９は、素子搭載領域側面１１９ａを有し、素子搭載領域側面１１９ａに複数の凹部１１９ｃを有しており、複数の凹部１１９ｃのそれぞれが平面視において引き回し領域１１８ｂの方向へ向かって狭まるように凹んでいる。これにより、半田バンプ１３２が加熱工程で溶融して素子搭載領域１１８ａから拡がるときに、半田の表面張力により半田の拡がりを抑えることができる。
　更に、本実施形態における圧電装置１００の凸部１１９は、素子搭載領域側面１１９ａと引き回し領域側面１１９ｂとを有しており、素子搭載領域側面１１９ａが引き回し側面１１９ｂよりも急傾斜となっている。これにより、本施形態における圧電装置１００の凸部１１９は、半田バンプ１３２の拡がりを抑えることができる。
　また、本実施形態における圧電装置１００の金属パターン１１８は、凸部１１９よりも引き回し領域１１８ｂ側に設けられた溝部１１７を有している。これにより、本発明の実施形態における圧電装置１００の金属パターン１１８は、凸部１１９の素子搭載領域側面１１９ａで半田バンプ１３２を形成する半田が止まらなかったとしても、溝部１１７で半田バンプ１３２を形成する半田の拡がりを止め、引き回し領域１１８ｂへの半田の拡がりを抑えることができる。
　更に、本実施形態における圧電装置１００の溝部１１７は、図３に示すように、複数の微少な凹凸が形成されていることで、素子搭載領域側面１１９ａを超えて半田バンプ１３２が拡がったとしても、溝部１１７の複数の微少な凹凸で半田バンプ１３２の拡がりを抑えることができる。また、本実施形態における溝部１１７は、複数の微少な凹凸が半田の流れを抑える方向に形成されており、半田の流れが複数の微少な凹凸で止まるように形成されている。
（第２の実施形態）
　図５は、第２の実施形態に係る圧電装置２０１を示す図１と同様の断面図である。なお、第２の実施形態において、第１の実施形態の構成と同一又は類似する構成については、第１の実施形態と同一の符号を付すことがあり、また、説明を省略することがある。
　圧電装置２０１は、導体パターン１２４を有している点のみが第１の実施形態の圧電装置１００と相違する。なお、圧電装置２０１では、樹脂１４０が設けられていないが、圧電装置２０１においても樹脂１４０が設けられてよい。
　図６に示されているように、導体パターン１２４は、集積回路素子１３０の下面（半田バンプ１３２によって接合される側の面）の縁部に設けられている。なお、以下では、集積回路素子１３０及び導体パターン１２４の組み合わせを集積回路部品１３１ということがある。図６において、複数の電極パッド１３４と導体パターン１２４は、集積回路素子１３０の一部を透過した状態で破線によって示されている。導体パターン１２４は、例えば、集積回路素子１３０がウェハから切り出されて作製される場合において、ウェハの撓みの低減に寄与する。導体パターン１２４は、接地され又は電気的に浮遊状態とされている。
　ここで、本実施形態の圧電装置２０１における集積回路素子１３０の複数の電極パッド１３４と導体パターン１２４と、基板部１１１の上面に設けられた金属パターン１１８の凸部１１９等との位置関係について図６（ｂ）、図７を参照して説明する。なお、以下では、凸部１１９、半田との濡れ性が比較的低い金属酸化物若しくは溝部１１７又はこれらの組み合わせを半田流れ防止領域１５１ということがある。
　集積回路部品１３１は、図６（ｂ）に示されているように、第２の凹部Ｋ２に設けられている。また、集積回路素子１３０の複数の電極パッド１３４は、第２の凹部Ｋ２の長辺に近い領域に位置している。集積回路素子１３０の下面の縁部に設けられた導体パターン１２４は、複数の電極パッド１３４の外側に複数の電極パッド１３４を囲むように設けられている。
　ここで、半田流れ防止領域１５１は、導体パターン１２４に重なる位置かまたは導体パターン１２４よりも内側に形成されている。例えば、半田流れ防止領域１５１の少なくとも素子搭載部材１１０の内側を向く縁が導体パターン１２４よりも内側に形成されている。
　よって、本実施形態の圧電装置２０１は、集積回路素子１３０の導体パターン１２４よりも内側において、金属パターン１１８の半田流れ防止領域１５１により、半田流れを止められるため、導体パターン１２４によって集積回路素子１３０の複数の電極パッド１３４が短絡する可能性が低減される。
　前記した第１及び第２実施形態以外にも、本発明の要旨を逸脱しない範囲において種々の変更、改良等が可能である。例えば、金属パターン１１８は、３層構造を示したが例えば４層構造の多層構造でも構わない。また、金属パターン１１８の３層構造の組成も、例えば、下層にモリブデン（Ｍｏ）、中間層にニッケル（Ｎｉ）、上層に金（Ａｕ）が形成された構造を示したがこれに限定されず、他の金属の組み合わせでも構わない。例えば、金属パターン１１８は、下層にタングステン（Ｗ）、中間層に銅（Ｃｕ）、上層に銀（Ａｇ）などの組み合わせでも構わない。また、前記実施形態に示した圧電装置１００又は２０１の第一の凹部Ｋ１に搭載される圧電素子１２０は、平面視矩形状の圧電素板の両主面に励振用電極と接続用電極を備える構造を示したが、これに限定することなく、例えば、平面視形状が円形や、音叉形の圧電素板に各種電極を設けた形態の圧電素子でもよく、又圧電素子に変えて弾性表面波素子を用いても構わない。
　また、半田流れ防止領域１５１は、レーザ照射で形成される以外に、例えば、金属パターン１１８上に絶縁層または金属層を形成し、凸部を設けることなどにより構成されてもよい。
　絶縁層としては、例えば、セラミックコート（例えばアルミナコート）または樹脂など挙げられる。セラミックコートまたは樹脂は、金属パターン１１８上にスクリーン印刷で設けられる。セラミックコートまたは樹脂等は、複数個の絶縁層をスクリーン印刷により同時に形成され得るため、製造コストの低減を図ることが可能となる。尚、絶縁層は金属パターンに比べて半田との濡れ性が低いため、半田の流れだしをより低減させることができる。
　また、金属層は、例えば、Ａｌ膜またはＣｒ膜等で、スパッタなどの真空印刷法で形成される。Ａｌ膜またはＣｒ膜等は、複数個の金属層をスパッタなどにより同時に形成され得るため、製造コストの低減を図ることが可能となる。
　尚、レーザによる形成方法においては、金属パターン１１８をレーザで削ることで凸部を形成できるので、凸部形成のための材料を別途準備する必要がなく、部材低減による生産性の向上が可能となる。また、レーザによる形成方法においては、金属パターン１１８が形成された素子搭載部材１１０に対する後加工で凸部が形成されるため、例えば集積回路素子１３０のサイズに対応させて半田流れ防止領域１５１の形成位置を決定することができるなど製造における自由度が高まる。
　１００，２０１・・・圧電装置
　１１０・・・素子搭載部材
　１１１・・・基板部
　１１２・・・第一の枠部
　１１３・・・第二の枠部
　１１４・・・圧電素子搭載用パターン
　１１６・・・外部接続端子
　１１７・・・溝部
　１１８・・・金属パターン
　１１８ａ・・・素子搭載領域
　１１８ｂ・・・引き回し領域
　１１９・・・凸部
　１１９ａ・・・素子搭載領域側面
　１１９ｂ・・・引き回し領域側面
　１１９ｃ・・・凹部
　１２０・・・圧電素子
　１２１・・・導電性接着剤
　１２４・・・導体パターン
　１３０・・・集積回路素子
　１３２・・・半田バンプ
　１３４・・・電極パッド
　１４０・・・樹脂
　１５０・・・蓋部材
　１５１・・・半田流れ防止領域
　Ｋ１・・・第一の凹部
　Ｋ２・・・第二の凹部

Claims (7)

  1. 　素子搭載部材と、
    　前記素子搭載部材に搭載されている圧電素子と、
    　前記素子搭載部材の表面に形成されており、素子搭載領域および引き回し領域を含んでいる金属パターンと、
    　半田バンプによって前記金属パターンの前記素子搭載領域に電気的に接続されている集積回路素子と、
    　を備え、
    　前記金属パターンが前記素子搭載領域と前記引き回し領域との間に設けられた凸部を有しており、前記凸部の少なくとも表面部分が金属酸化物から成る
    　圧電装置。
  2. 　前記凸部が素子搭載領域側面を有しており、前記素子搭載領域側面が平面視において複数の凹部を有しており、複数の凹部のそれぞれが平面視において前記引き回し領域の方向へ向かって狭まるように凹んでいる
    　請求項１記載の圧電装置。
  3. 　前記凸部が素子搭載領域側面と引き回し領域側面とを有しており、前記素子搭載領域側面が前記引き回し側面よりも急傾斜である
    　請求項１記載の圧電装置。
  4. 　前記金属パターンは、前記凸部よりも前記引き回し領域側に設けられた溝部を有している
    　請求項１記載の圧電装置。
  5. 　前記集積回路素子の、前記半田バンプによって前記金属パターンに接続される側の面の縁部に設けられた導体パターンを更に有し、
    　前記凸部は、前記導体パターンに重なる位置かまたは前記導体パターンよりも内側に設けられている
    　請求項１記載の圧電装置。
  6. 　前記凸部は、レーザを照射することにより形成されている
    　請求項１記載の圧電装置。
  7. 　素子搭載部材と、
    　前記素子搭載部材に搭載されている圧電素子と、
    　前記素子搭載部材の表面に設けられており、素子搭載領域および引き回し領域を含んでいる金属パターンと、
    　前記金属パターンの前記素子搭載領域に半田バンプによって電気的に接続されている集積回路素子と、前記集積回路素子の、前記半田バンプによって前記金属パターンに接続されている側の面の縁部に設けられた導体パターンとを含む集積回路部品と、
    　を備え、
    　前記金属パターンが、前記素子搭載領域と前記引き回し領域との間に設けられた半田流れ防止領域をさらに含んでおり、
    　前記半田流れ防止領域が、平面視において前記集積回路部品の前記導体パターンに重なる位置かまたは前記導体パターンよりも内側に設けられている
    　圧電装置。
PCT/JP2012/072152 2011-08-31 2012-08-31 圧電装置 WO2013031944A1 (ja)

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TW201320420A (zh) 2013-05-16
CN103650335A (zh) 2014-03-19
TWI563699B (ja) 2016-12-21
US9006958B2 (en) 2015-04-14
KR20140096256A (ko) 2014-08-05
CN103650335B (zh) 2016-08-17
US20130140947A1 (en) 2013-06-06

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