WO2012136158A2 - 单片双轴桥式磁场传感器 - Google Patents

单片双轴桥式磁场传感器 Download PDF

Info

Publication number
WO2012136158A2
WO2012136158A2 PCT/CN2012/075956 CN2012075956W WO2012136158A2 WO 2012136158 A2 WO2012136158 A2 WO 2012136158A2 CN 2012075956 W CN2012075956 W CN 2012075956W WO 2012136158 A2 WO2012136158 A2 WO 2012136158A2
Authority
WO
WIPO (PCT)
Prior art keywords
bridge
sensor
magnetic field
magnetic
sensing element
Prior art date
Application number
PCT/CN2012/075956
Other languages
English (en)
French (fr)
Other versions
WO2012136158A3 (zh
Inventor
迪克⋅詹姆斯·G
金英西
沈卫锋
雷啸锋
薛松生
Original Assignee
江苏多维科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201110315913.9A external-priority patent/CN102435963B/zh
Application filed by 江苏多维科技有限公司 filed Critical 江苏多维科技有限公司
Priority to JP2014502982A priority Critical patent/JP6193212B2/ja
Priority to EP12767837.3A priority patent/EP2696210B1/en
Priority to US14/110,106 priority patent/US9575143B2/en
Publication of WO2012136158A2 publication Critical patent/WO2012136158A2/zh
Publication of WO2012136158A3 publication Critical patent/WO2012136158A3/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors

Definitions

  • the invention relates to the design and preparation of a bridge sensor, in particular to a single chip biaxial bridge type magnetic field sensor.
  • Magnetic sensors are widely used in modern systems to measure or induce physical parameters such as magnetic field strength, current, position, motion, and direction.
  • sensors for measuring magnetic fields and other parameters.
  • they are subject to various well-known limitations in the prior art, such as; oversize, low sensitivity, narrow dynamic range, high cost, low reliability, and other factors. Therefore, it is necessary to continuously improve the magnetic sensor, particularly a sensor that is easily integrated with a semiconductor device or an integrated circuit, and a method of manufacturing the same.
  • the tunnel junction magnetoresistive sensor (MTJ, Magnetic Tu dish d Juiictioi has the advantages of high sensitivity, small size, low cost and low power consumption.
  • the germanium sensor is compatible with the semiconductor standard manufacturing process, the high sensitivity MTJ sensor is not realized low.
  • the cost is large-scale production.
  • the yield of the sensor depends on the offset value of the magnetoresistive output of the MTJ component. It is difficult to achieve high matching of the magnetic resistance of the MTJ of the bridge, and the orthogonal magnetic field sensor is integrated on the same semiconductor substrate. The process is very complicated.
  • the present invention provides a method of fabricating a dual-axis magnetoresistive sensor chip for mass production using standard semiconductor fabrication processes.
  • the dual axis sensor uses a ramp junction magnetoresistive element or a giant magnetoresistance (GMR) component to fabricate two different bridge magnetic sensors on the same semiconductor substrate to induce quadrature magnetic field components.
  • the ability of the two-axis magnetic sensor to sense the orthogonal magnetic field component depends on the geometry of the sensing element.
  • the bridge sensor is more stable by providing a permanent magnet bias layer, and the permanent magnet layer is initialized in a strong magnetic field at the wafer level or after packaging through the same process.
  • the permanent magnet bias layer and the reference layer of the bridge sensor are initialized in the same direction without special treatment, local heating or deposition of different magnetic materials in different processes.
  • the present invention provides a monolithic 3 ⁇ 4 axis bridge type magnetic field sensor comprising: a reference bridge sensor sensitive along the axis direction and a push-pull bridge sensor sensitive along the "X" axis direction, the reference bridge sensor including the reference component And the sensing element, the push-pull bridge sensor includes a sensing element, wherein the "X" axis and the "Y" axis are orthogonal.
  • the reference bridge sensor is a reference full bridge sensor
  • the reference full bridge sensor comprises a reference component and a sensing component
  • the push-pull bridge sensor is a push-pull full bridge sensor
  • the monolithic biaxial bridge magnetic field sensor further includes a permanent magnet for biasing to set a sensitivity difference between the reference component and the sensing component of the reference full bridge sensor and the push-pull full bridge sensor The free layer magnetization direction of the sensing element.
  • the reference element and the sensing element of the reference full bridge sensor have a magnetic anisotropic shape to set them The sensitivity is poor, and the sensing element of the push-pull full-bridge sensor has a magnetic anisotropic shape to set its free layer magnetization direction.
  • the reference bridge sensor is a reference half bridge sensor and the push-pull bridge sensor is a push-pull half bridge sensor.
  • the monolithic dual-axis bridge magnetic field sensor further includes a permanent magnet for biasing to set a sensitivity difference between the reference component and the sensing component of the reference half-bridge sensor and the pass-pull half-bridge sensor The self-layer magnetization direction of the sensing element.
  • the reference element and the sensing element of the reference half-bridge sensor have a shape of magnetic anisotropy to set a sensitivity difference between the gates thereof, and the sensing element of the push-pull half-bridge sensor has a magnetic anisotropic shape to Set the direction of magnetization of its free layer.
  • the reference bridge sensor comprises a reference arm and a sensing arm.
  • the reference bridge sensor includes a shield layer for covering the magnetoresistive elements constituting the reference arm to reduce the sensitivity of the reference arm, and the shield layer is made of a ferromagnetic material having a high magnetic permeability.
  • the sensing element of the reference bridge sensor is provided with a ferromagnetic material of high magnetic permeability to increase the sensitivity of the sensing element.
  • the present invention adopts the above structure, and can realize integrated damage on the same semiconductor substrate at a low cost and on a large scale.
  • Figure 1 is a schematic diagram of a tunnel junction magnetoresistance.
  • Fig. 2 is a schematic diagram showing the output of a spin- ⁇ magnetoresistive element whose reference layer magnetization direction is a difficult axis.
  • FIG 3 is a connection diagram of combining a plurality of magnetic tunnel junction elements into one equivalent magnetoresistive element.
  • Figure 4 is a schematic diagram of a linear reference full-bridge magnetoresistive sensor.
  • Figure 5 is a layout diagram of a reference full bridge sensor that uses a permanent magnet bias to generate a cross-bias field.
  • Figure 6 is a response diagram of the reference full-bridge sensor in the direction of sensitivity of the applied magnetic field.
  • Figure 7 is a response diagram of the reference full-bridge sensor under the action of an applied magnetic field perpendicular to the sensitive direction.
  • Figure 8 is a simulation result of the output curve of the reference full-bridge magnetoresistive sensor.
  • Figure 9 is a schematic diagram of a linear push-pull full-bridge magnetoresistive sensor.
  • Figure 10 is a conceptual diagram of a tapered-pull full-bridge sensor using shape-differentiation and permanent-magnet bias.
  • the permanent magnet structure uses dry to generate a biasing magnetic field, and the rotating self-elastic layer magnetization direction is used to generate a push-pull output curve.
  • Figure ⁇ is the response diagram of the component of the push-pull full-bridge magnetoresistive sensor rotating in the magnetization direction of the free layer in the direction of sensitivity in the external field.
  • Figure 12 is a response diagram of a push-pull full-bridge magnetoresistive sensor that rotates in the magnetization direction of the free layer in the direction of the external field perpendicular to the sensitivity direction.
  • Figure 3 is the output diagram of the push-pull full-bridge magnetoresistive sensor.
  • Fig. 14 is a first effect diagram of generating a magnetic bias by providing a permanent magnet.
  • Fig. 15 is a second effect diagram of generating a magnetic bias by providing a permanent magnet.
  • Figure 16 is a conceptual diagram of the layout of a single-plate, two-axis bridge magnetic field sensor with a push-pull full-bridge and a reference full-bridge design.
  • FIG. 1 is a simplified conceptual diagram of a MTJ multilayer membrane element.
  • An MTJ component 1 generally includes an upper ferromagnetic layer or a Synthetic Antifei Toniagnetic (SAF) layer 10, a lower ferromagnetic layer (or SAF layer) 11, and a tunnel barrier layer 12 between the two magnetic layers.
  • the upper ferromagnetic layer (SAF layer) 0 constitutes a magnetic free layer whose magnetization direction changes as the external magnetic field changes.
  • the lower magnetic layer (SAF layer) 11 is a fixed magnetic layer whose magnetization direction is pinned in one direction and does not change under normal conditions.
  • the pinned layer is typically deposited with a ferromagnetic layer or a SAF layer above or below the antiferromagnetic layer 13.
  • the MTJ structure is typically deposited over the conductive seed layer 14, while the top of the ⁇ , ⁇ structure is the electrode layer 15.
  • the measured resistance value 16 between the seed layer 14 of the MTJ and the protective layer 15 is the relative magnetization direction representing the free layer and the ft layer.
  • the resistance 16 of the entire element is in a low resistance state.
  • the resistance 16 of the entire element is in a high resistance state. It is found by known techniques that the resistance of the MTJ element 1 can vary linearly between a high resistance state and a low resistance state with an applied magnetic field.
  • FIG. 2 is a schematic diagram of an output curve of a GMR or MTJ magnetoresistive element suitable for linear magnetic field measurement.
  • the output curve saturates at the resistance of the low-resistance state 21 and the high-impedance state 22, and RL and R H represent the resistance values of the low-resistance state and the high-resistance state, respectively.
  • the output curve is linearly dependent on the applied magnetic field.
  • the output curve is usually not symmetric with the point of H:::0.
  • H. 25 is a typical offset between the saturation fields 26, 27, and the saturation region is closer to the point of H::0.
  • the value of 25 is often referred to as "Orange Peel” or “Ned Coupling", which is typically between 1 and 25 Oe, and the structure of ferromagnetic thin films in GMR or MTJ components. It is related to flatness and depends on materials and manufacturing processes. In the unsaturated region, the output curve equation can be approximated;
  • the ⁇ , ⁇ elements 1 are equivalent to each other in series to be a ⁇ , ⁇ magnetoresistance to form a Wheatstone bridge.
  • the MTJ magnetoresistors connected in series can reduce noise and improve the stability of the sensor.
  • the bias voltage of each MTJ component follows The number of knots decreases and decreases. The reduction in current requires a large voltage output, which reduces the shot noise and enhances the ESD stability of the sensor. Each sensor is used to reduce the voltage.
  • the noise of the MTJ string decreases correspondingly because the uncorrelated random behavior of each individual MTJ element 1 is averaged out.
  • full-bridge sensors that compensate for the nano-coupling, with the sensitive directions being parallel and perpendicular to the magnetization direction of the pinning layer, respectively.
  • These two sensor designs are called reference bridge sensors and push-pull bridge sensors, respectively.
  • the present invention first describes the implementation of a reference bridge sensor and a push-pull bridge sensor. Next, a method of implementing a dual-axis sensor in which two sensors are integrated on a single chip will be described.
  • Figure 4 is a schematic diagram of a reference bridge sensor.
  • the output curves of one of the two sensing elements are strongly dependent on the applied magnetic field, and the other output curve is weakly dependent on the applied magnetic field.
  • the sensing elements 40, 41 corresponding to the output curve strongly dependent on the applied magnetic field are referred to as sensing arms; the other two sensing elements 42, 43 corresponding to the output curve weakly dependent on the applied magnetic field are referred to as reference arms.
  • the sensor needs to be connected to the bias voltage Vbias44 and the ground GND45 solder joint, and also to the center point of the two half bridges and V 2 47. The voltage at the center point is - Re '
  • the output voltage is linear when H satisfies the following conditions: " ⁇ ""order" big ⁇
  • the linear region is wide enough as a good linear sensor.
  • AR/R « 150%
  • the range of the linear region of the sensor follows the equation:
  • the device will operate in a linear output with no calibration and provide a ⁇ of 2.5 letters larger than the expected linear operating range.
  • the sensitivity of a magnetoresistive element is defined as the resistance function of the resistance as a function of the applied magnetic field: It is not practical to reduce the reluctance of the reference arm and the sensor arm associated with it, so the best way to change the sensitivity is to change
  • H s H s . This can be achieved by one of the following methods or a combination of several different methods - magnetic shielding deposits a high permeability ferromagnetic layer on the reference arm to attenuate the applied magnetic field.
  • Shape Anisotropy Energy Since the reference element and the MTJ sensing element have different sizes, they have different shape anisotropy properties. The most common practice is to make the long axis length of the reference element larger than the long axis length of the MTJ sensing element, and the short axis length is smaller than the short axis length of the sensing element, so the demagnetization effect of the reference element parallel to the sensitive direction is much larger than the sensing element. .
  • Exchange Bias This technique creates an effective external field perpendicular to the sensitive direction through the exchange coupling of the MTJ component free layer and the adjacent antiferromagnetic or permanent magnetic layer.
  • a Cii or Ta isolation layer can be placed between the free layer and the exchange bias layer to reduce the exchange bias strength.
  • the multilayer film structure is described as follows;
  • antiferromagnetic layer 1 AF1
  • antiferromagnetic layer 2 AF2
  • antiferromagnetic layer 2 AF2
  • the ferromagnetic layer employs some representative ferromagnetic films or multilayer films composed of ferromagnetic alloys including, but not limited to, NiFe, CoFeB, CoFe, and Ni:FeCo.
  • the insulating layer may be any insulating material capable of spin polarization, such as aluminum oxide or magnesium oxide.
  • the barrier layer is typically a thin film of non-ferromagnetic material such as Ru or Cu.
  • the antiferromagnetic layer AFi has an antiferromagnetic barrier temperature (Bloddng Temperature) lower than that of the AF2, so that the bias field of the ferromagnetic layer/Ru/ferromagnetic layer junction layer and the bias field of the free layer are orthogonal to each other. .
  • permanent magnet alloy sensing elements such as Fe, Co, Cr, and Pt or magnetic tunnel junctions are used to provide a diffuse magnetic field to bias the output curve of the ⁇ component.
  • permanent magnet bias is that the permanent magnet can be initialized using a large magnetic field after the bridge is constructed.
  • the bias field can eliminate the magnetic domain of the MTJ component to stabilize and linearize the output of the MTJ component.
  • the great advantage of this design is its great flexibility in design adjustments. The following is a achievable multilayer film structure - seed layer / antiferromagnetic layer 1 / ferromagnetic layer ferromagnetic layer / insulating layer / antiferromagnetic layer / thick isolation layer / permanent magnet layer / protective layer.
  • the above techniques for adjusting the sensitivity can be used alone or in combination. When combining these available technologies, it can be extremely high, thus reducing the bridge sensor reference arm's & ⁇ , providing a very stable ⁇ when using the cross-bias field to set the sensitivity of the MTJ component, the cross-bias field Hcross and Hs has the following relationship:
  • the preferred method of providing Hcross is shown in Figure 5.
  • the reference magnetoresistive 50 is located in a narrow gap between the two wide magnets 51. This placement creates a strong bias field 52 that makes the reference arm relatively insensitive to external magnetic fields.
  • the MTJ sensing element 53 is located in a wide gap between two relatively narrow permanent magnets 54, which will create a weak bias field 55.
  • the weak bias field 55 results in high sensitivity of the MTJ sensing element, and the MTJ reference element and the MTJ sensing element are similar
  • the way in Figure 4 is arranged in a Wheatstone bridge.
  • the magnetization direction of the permanent magnet is 56, and the magnetization direction of the pinned layer is 57, which is perpendicular to the magnetization direction of the permanent magnet.
  • the MTJ sensing element 60 is placed in a first magnetic field 61 parallel to the magnetization direction 57 of the pinned layer. Since the first applied magnetic field 61 has a component perpendicular to the magnetization direction of the free layer, the magnetization direction 64 of the ff1 layer is rotated to the first applied magnetic field 61, so that the resistance of the MTJ sensing element 60 is related to the direction and pinning of the free layer magnetization. The angle of the magnetization direction 57 of the layer changes with a change in the angle.
  • the second applied magnetic field 65 is parallel to the long-axis direction 66 of the MTJ element 67
  • the same free-layer magnetization direction 68 as the long-axis direction 66 has no torque because the second applied magnetic field 65 is magnetized along the free layer.
  • ⁇ 68 has no vertical component.
  • the resistance of the sensing element 67 therefore does not change with changes in the external field parallel to the X-axis 66 and perpendicular to the magnetization direction 57 of the staple layer. Therefore, this reference bridge sensor is designed to be sensitive only to the external field parallel to the magnetization direction 57 of the T-layer. If the permanent magnet 69 is used for biasing, the magnetization direction of the permanent magnet 69 is mainly in the direction indicated by the arrow 56 in Fig. 7, parallel to the magnetization direction 62 of the pinned layer.
  • Figure 8 is a standard output curve 70 of a reference bridge sensor.
  • the external field H Y 71 is along the magnetization direction of the pinned layer, and its output curve is a negative to positive slope curve, passing the peak of the lowest negative value 73 and the highest positive value 72.
  • the output curve 70 of the outer field 71 is linear over a wide range between 72 and 73.
  • Push-Pull Bridge Sensor can bias the free layer magnetization by a combination of the following or the following :
  • Shape anisotropy energy ⁇ The magnetization direction of the magnetic free layer is biased by the anisotropy energy of the MTJ element, and the long axis of the MTJ element is an easy magnetization axis, and the shape anisotropy can be set by setting the length to the axial ratio of the element;
  • the permanent magnet bias is placed around the MTJ element to bias the magnetization direction of the free layer - current line offset.
  • the metal wire is deposited on the upper layer or the T layer of the MTJ element to generate a magnetic field, thereby achieving a bias to the magnetization direction of the magnetic free layer.
  • FIG. 9 is a schematic diagram of a push-pull bridge sensor.
  • the two sensor elements R12 80, R21 81 are tilted relative to the free layer magnetization directions of the other two sensing elements R11 82, R22 83, so that the field will cause two sensing resistors RI 2 and R21
  • the resistance increases, while the other two sense resistors!
  • the resistance values of 122 and R2 are correspondingly reduced, which doubles the bridge output.
  • Changing the direction of the applied magnetic field will increase the resistance of R22 and R1 1 and decrease the resistance of ⁇ R21 and R 12 accordingly.
  • the response is doubled, but the polarity of the output has changed.
  • Using a combination of two pairs of sensors to measure the external field has the opposite response. A pair of resistance increases and the other pair decreases. This increases the response of the bridge circuit and is therefore referred to as a "push-pull" bridge circuit.
  • the output of the R2l ⁇ H R22 ⁇ H bridge sensor is defined as;
  • FIG. 10 shows a conceptual block diagram of a push-pull bridge sensor. As shown, the direction of the magnetic field between the strip-shaped permanent magnets 90 is parallel to the magnetization direction 91 of the pinned layer, thus providing biasing fields to the MTJ elements 92 and 93, resulting in a free layer magnetization direction of the MTJ elements 92 and 93. There is a component along the magnetization direction 91 of the nail layer.
  • the MTJ element 92 is rotated about +45 n along the magnetization direction 91 of the nail layer, and the MTJ element 93 is rotated about -45 ° along the magnetization direction 91 of the nail layer.
  • FIG. 11 and Figure 12 are schematic diagrams showing the working principle of the push-pull bridge sensor.
  • the magnetization directions 101 and 102 of the free layers of the sensing elements 92 and 93 are both parallel or anti-parallel around the magnetization direction of the pin 3 ⁇ 4 layer.
  • the direction is rotated, but the amount of change is the same.
  • the response causes the resistance values of sensing elements 92 and 93 to vary, which is a common mode where the output of the bridge sensor does not change. Therefore, the bridge sensor is insensitive to external field components that are parallel or anti-parallel to the magnetization direction 57 of the pinned layer.
  • the resistance values of the sensing elements 92 and 93 change accordingly.
  • the magnetization directions of the free layer, 04 and 105 rotate with it, causing its magnetization component to be parallel to the second applied magnetic field 65.
  • This causes the free layer magnetization direction of the sensing element 93 to be away from the magnetization direction 57 of the pinned layer and the magnetization direction of the free layer of the sensing element 92 near the magnetization direction 57 of the pinned layer. Therefore, the resistance of the sensing element 93 will increase, and the resistance of the sensing element 92 will decrease.
  • the change of the resistance is no longer a common mode, and the output of the bridge circuit will increase.
  • Changing the second applied magnetic field 65 to the vertical direction causes the resistance of the element 93 to decrease and the resistance of the element 92 to increase, thereby changing the polarity of the bridge output.
  • Equation (18) is the sensitivity equation for a reference bridge sensor integrated on the same substrate.
  • Figure 13 is a typical output curve of a push-pull bridge sensor that is a sloped curve in the range of the external field H x lli perpendicular to the magnetization direction of the ft layer of the nail, passing the negative value 112 and the peak value of the positive value U3.
  • the output curve 110 is linear with the outer field 111 over a wide range, and its output curve is the same as the reference bridge. Therefore, a single-plate dual-axis bridge magnetic sensor using a combination of a reference bridge of a GMR or MTJ sensing element and a push-pull bridge is feasible.
  • the two-axis design without the bias field is simple because the pinning directions are common to the reference bridge and the push-pull bridge, so the following description focuses on the case where the permanent magnet is biased.
  • the field in which the permanent magnet is formed can be considered to be formed at the edge of the permanent magnet due to the virtual magnetic charge, as shown in Figs. 14 and 15, which is caused by the edge effect of magnetization.
  • the magnetic charge changes with the magnitude and direction of the remanence magnet Mr, while the magnitude and direction of remanence
  • the orientation of the edge of the permanent magnet is related.
  • the direction of the magnetic field between the permanent magnets 120 and 122 is determined by the position of the magnetic charge, rather than the direction of the permanent magnet, and the magnitudes of the bias fields 121 and 123 are determined by the magnetization directions of the permanent magnets 120 and 122. This approach makes it possible to build a permanent magnet biased biaxial magnetic field sensor.
  • Figure 16 is a layout conceptual view of a permanent magnet biased biaxial magnetic field bridge sensor.
  • the push-pull bridge sensor 130 and the reference bridge sensor 13 can be placed side by side on the same substrate and fabricated using the same process.
  • the biasing permanent magnet 133 of the reference bridge sensor 30 and the biasing permanent magnet 132 of the push-pull bridge sensor 31 are arranged at 90°.
  • the push-pull bridge sensor 130 and the reference bridge sensor 13 can obtain an appropriate permanent magnet bias, wherein the push-pull bridge
  • the sensor 30 and the reference bridge sensor 131 are sensitive to the components of the external field 134 along the X-axis and the x-axis, respectively.
  • the present invention adopts the above structure, and enables fabrication at a low cost and large scale integration on the same semiconductor substrate.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)

Description

单片双轴桥式磁场传感器 技术领域
本发明涉及桥式传感器的设计和制备， 特别是一种单一芯片双轴桥式磁场传感器。
背景技术
磁性传感器广泛用于现代系统中以测量或感应磁场强度、 电流、 位置、 运动、 方向等物理参 数。 在现有技术中， 有许多不同类型的传感器用于测量磁场和其他参数。 但是， 他们都受到 了现有技术中的各种众所周知的限制， 例如； 尺寸过大， 灵敏度低， 动态范围窄， 成本高， 可靠性低以及其他因素。 因此， 持续地改进磁传感器， 特别是改迸易与半导体器件或集成电 路整合的传感器及其制造方法是有必要的。
隧道结磁电阻传感器 （MTJ, Magnetic Tu皿 d Juiictioi 具有高灵敏度， 尺寸小， 成本低以及 功耗低等优点。 尽管 ΜΤΠ传感器与半导体标准制造工艺相兼容， 但是高灵敏度的 MTJ传感 器并没有实现低成本大规模生产。 传感器的成品率取决于 MTJ 元件磁阻输出的偏移值， 组 成电桥的 MTJ 的磁阻很难达到高的匹配度， 同时正交磁场传感器在同一半导体基片上集成 的制造工艺非常复杂。
发明内容
本发明提供了一种采用标准半导体制造工艺、 用于大规模生产的双轴线性磁电阻传感器芯片 的制备方法。 双轴传感器采用璲道结磁电阻元件或巨磁电阻 （GMR) 元件在同一半导体基 片上制备两个不同的桥式磁传感器以感应正交磁场分量。 双轴磁传感器能够感应正交磁场分 量依赖于传感元件的几何形状。 桥式传感器通过设置永磁偏置层后能更稳定， 永磁层在晶圆 级别或在封装之后通过同一工序在强磁场中初始化。 桥式传感器的永磁偏置层和参考层沿同 一方向初始化， 没有通过特殊处理、 局部加热或者在不同的工序中沉积不同的磁性材料。 本发明提供了一种单片¾轴桥式磁场传感器， 它包括 ·沿 轴方向敏感的参考桥式传感 器和一沿 " X "轴方向敏感的推挽桥式传感器， 参考桥式传感器包括参考元件和传感元件， 推挽桥式传感器包括传感元件， 其中 "X"轴和 "Y"轴相正交。
优选地， 参考桥式传感器为参考全桥传感器， 该参考全桥传感器包括参考元件和传感元件， 推挽桥式传感器为推挽全桥传感器，》
迸一歩优选地， 该单片双轴桥式磁场传感器还包括一用于偏置的永磁体， 以设置参考全桥传 感器的参考元件和传感元件之间的灵敏度差和推挽全桥传感器的传感元件的自由层磁化方 向。
迸一步优选地， 参考全桥传感器的参考元件和传感元件具有磁各向异性的形状以设置它们之 间的灵敏度差， 推挽全桥传感器的传感元件具有磁各向异性的形状以设置其自由层磁化方 向。
优选地， 参考桥式传感器为参考半桥传感器， 推挽桥式传感器为推挽半桥传感器。
迸一歩优选地， 该单片双轴桥式磁场传感器还包括一用于偏置的永磁体以设置参考半桥传感 器的参考元件和传感元件之间的灵敏度差和推挽半桥传感器的传感元件的自 层磁化方向。 进一步优选地， 参考半桥传感器的参考元件和传感元件具有磁各向异性的形状以设置它 ί门之 间的灵敏度差， 推挽半桥传感器的传感元件具有磁各向异性的形状以设置其自由层磁化方 向。
优选地， 参考桥式传感器包括参考臂和感应臂。
进一步优选地， 参考桥式传感器包括一用于包覆住构成参考臂的磁电阻元件的屏蔽层以降低 参考臂的灵敏度， 屏蔽层为高磁导率的铁磁材料构成。
优选地， 参考桥式传感器的传感元件周边设置有高磁导率的铁磁材料， 以增加传感元件的灵 敏度。
本发明采用以上结构， 能够实现低成本大规模的在同一半导体基片上集成制伤。
附图说明
图 1 是隧道结磁电阻的示意图。
图 2 是参考层磁化方向为难轴的自旋闽磁电阻元件的输出示意图。
图 3是将多个磁隧道结元件合并为一个等效磁电阻元件的连接示意图。
图 4是线性参考全桥磁电阻传感器的原理图。
图 5是一种采用永磁偏置产生交叉偏置场的参考全桥传感器的布局图。
图 6是参考全桥传感器在外加磁场沿灵敏度方向的分量作 ¾Τ的响应图。
图 7是参考全桥传感器在外加磁场垂直于灵敏方向的分量作用下的响应图。
图 8 是参考全桥磁电阻传感器的输出曲线的模拟结果。
图 9为线性推挽全桥磁电阻传感器的原理图。
图 10 利用形状各项异性能和永磁体偏置的一种锥挽全桥传感器的概念图， 永磁体结构用干 产生偏置磁场， 旋转的自 ώ层磁化方向用于产生推挽输出曲线。
图 Π 是自由层磁化方向旋转的推挽全桥磁电阻传感器在外场沿灵敏度方向的分量作用 Τ的 响应图。
图 12 是是自由层磁化方向旋转的推挽全桥磁电阻传感器在外场垂直于灵敏度方向的分量作 用下的响应图。 图】3是推挽全桥磁电阻传感器的输出图。
图 14是通过设置永磁体产生磁偏置的第一效果图。
图 15是通过设置永磁体产生磁偏置的第二效果图。
图 16是采 ]¾推挽全桥和参考全桥设†的单片双轴桥式磁场传感器的布局概念图。
具体实施方式
磁性隧道结概述；
图 1是一个 MTJ多层膜元件的功能概念简图。 一个 MTJ元件 1一般包括上层的铁磁层或人 工反铁磁 (Synthetic AntifeiToniagnetic, SAF) 层 10、 下层的铁磁层 （或 SAF层） 11、 两个 磁性层之间的隧道势垒层 12。 在这种结构中， 上层的铁磁层 （SAF层） 0组成了磁性自由 层， 其磁化方向隨外部磁场的改变而变化。 下层的磁性层 （SAF 层） 11 是一个固定的磁性 层， 其磁化方向钉扎在一个方向， 在一般条件下是不会改变的。 钉扎层通常是在反铁磁性层 13 的上方或下方沉积铁磁层或 SAF层。 MTJ结构通常是沉积在导电的种子层 14的上方， 同时 ΜΤ、ί结构的上方为电极层 15。 MTJ的种子层 14和保护层 15之间的测量电阻值 16是 代表自由层和钉 ft层的相对磁化方向。 当上层的铁磁层 （SAF 层） 10 的磁化方向与下层的 铁磁层 1 1 的磁化方向平行时， 整个元件的电阻 16在低阻态。 当上层的铁磁层 10的磁化方 向与下层的磁性层 12的磁化方向反平行时， 整个元件的电阻 16在高阻态。 通过已知的技术 发现， MTJ元件 1的电阻可随着外加磁场在高阻态和低阻态间线性变化。
图 2是适用于线性磁场测量的 GMR或 MTJ磁电阻元件的输出曲线示意图。 输出曲线在低 阻态 21和高阻态 22的阻值时饱和， RL和 RH分别代表低阻态和高阻态的阻值。 在阻值为 钉¾层和自由层磁化方向平行， 如图 2中箭头 28所指示的； 在阻值为 : R_H时, 钉扎 层和自由层磁化方向反平行， 如图 2 中箭头 29所指示的。 在达到饱和之前， 输出曲线是线 性依赖于外加磁场《；。 输出曲线通常不与 H:::0的点对称。 H。25是饱和场 26、 27之间的典型 偏移， 的饱和区域更接近 H::0 的点。 25 的值通常被称为 "桔子皮效应 （Orange Peel) "或 "奈尔耦合 (Ned Coupling) ", 其典型值通常在 1到 25 Oe之间， 与 GMR或 MTJ 元件中铁磁性薄膜的结构和平整度有关， 依赖于材料和制造工艺。 在不饱和区域， 输出曲线 方程可以近似为；
如图 3所示， ΜΤ、ί元件 1相互串联等效为一个 ΜΤ,ί磁电阻以组成惠斯通电桥。 串联起来的 MTJ磁电阻能降低噪声， 提高传感器的稳定性。 在 MTJ串中， 每个 MTJ元件的偏置电压随 ；道结数量的增加而降低。 电流的降低需要产生一个大的电压输出， 丛而降低了散粒噪 声， 增强了传感器的 ESD 稳定性， 每个传感器是用于降低电压。 此外， 随着磁隧道结数量 的增多 MTJ串的噪声相应地降低， 这是因为每一个独立的 MTJ元件 1的互不相关的隨机行 为被平均掉。
现有两种不同类型的全桥传感器补偿奈尔耦合， 敏感方向分别平行和垂直于钉扎层磁化方 向。 这两种传感器设计分别称为参考桥式传感器和推挽桥式传感器。 本发明首先阐述参考桥 式传感器和推挽桥式传感器的实现， 接下来会阐述将两种传感器在单一芯片上集成的双轴传 感器的实现方法。
图 4是参考桥式传感器的原理图， 图中所示两种传感元件， 其中一种的输出曲线强烈依赖于 外加磁场， 另外一种的输出曲线弱依赖于外加磁场。 与强烈依赖于外加磁场的输出曲线相对 应的传感元件 40、 41 被称为感应臂； 弱依赖于外加磁场的输出曲线对应的另外两个传感元 件 42、 43, 被称为参考臂。 此外， 在基片上时， 传感器需要和偏置电压 Vbias44 以及地线 GND45 的焊点相连， 同时还要和两个半桥的中心点 以及 V247 相连。 中心点的电压 为-
Figure imgf000006_0001
re '
Figure imgf000006_0002
R2^ (H) + R2ref (H) 桥式传感器的输出电压为;
Figure imgf000006_0003
s c j j re f
在理想情况下， R « R f ; « /C H 0 , 且当 H < ΗΓ , 桥式传感器的输出 为-
Figure imgf000006_0004
当 H满足下列条件时， 输出电压为线性的:
Figure imgf000007_0001
"<<" "阶" 的大 ^
Figure imgf000007_0002
在实际情况下， 线性区域作为一个良好的线性传感器是足够宽的。 对于磁电阻的磁传感器来 说， 要满足 A R/ R« 150%, H - 130 Oe » H 。 传感器的线性区域的范圈遵守以下方 程：
I ;」≤().4/ '" (8) 利用这些典型值， 器件将在无校准的情况 Τ线性输出工作， 并提供一个比预期的线性工作范 围大 2.5信的 Γ。
对于构建参考桥式传感器来说， 很重要的一点是设置参考臂的灵敏度。 磁阻元件的灵敏度被 定义为电阻随外加磁场的作用变化的电阻函数：
Figure imgf000007_0003
减少参考臂和与之相关的感应臂的磁阻是不实际的， 所以改变灵敏度的最佳方式是改变
Hs。 这可以是由下面一种方法或几种不同方法的组合来实现- 磁屏蔽 将高磁导率铁磁层沉积在参考臂上以削弱外加磁场的作 )¾。
形状各向异性能——由于参考元件和 MTJ传感元件有不同的尺寸因此具有不同的形状各向 异性能。 最普遍的做法是使参考元件的长轴长度大于 MTJ传感元件的长轴长度， 短轴长度 小于传感元件的短轴长度， 因此参考元件平行于敏感方向的退磁效应要远大于传感元件。 交换偏置 ·该技术是通过 MTJ 元件自由层和相邻的反铁磁层或永磁层的交换耦合创建一 个有效的垂直于敏感方向的外场。 可以在自由层和交换偏置层间设置 Cii或 Ta的隔离层来降 低交换偏置强度。 多层膜结构分述如下；
a. 种子层 /反铁磁层 1/铁磁层 /:R_u/铁磁层 /绝缘层 /铁磁层 /隔离层 /反铁磁层 2/保护层 . . . b. 种子层 /反铁磁层 1/铁磁层 Rxi/铁磁层 /绝缘层 /铁磁层 /隔离层 /永磁层 /保护层 . . . c. 种子层 /反铁磁层 1/铁磁层 /Ru/铁磁层 /绝缘层 /铁磁层 /反铁磁层 2/保护层 . . . d, 种子层 /反铁磁层 /铁磁层 /Ru/铁磁层 /绝缘层 /铁磁层 /永磁层 /保护层 ，， 其中， 反铁磁层 1 ( AF1 ) 和反铁磁层 2 (AF2 ) 是反铁磁材料， 如 PtMn IrM FeMn。 铁 磁层 （FM ) 采用一些具有代表性的由铁磁合金构成的铁磁薄膜或多层膜， 包括但不限于 NiFe , CoFeB、 CoFe和 Ni:FeCo。 绝缘层可能是任何能够自旋极化的绝缘材料， 如氧化铝或 氧化镁。 隔离层通常是 、 Ru 或 Cu这些非铁磁材料的薄膜。 反铁磁层 AFi的反铁磁阻隔 温度 （Bloddng Temperature ) 要低于 AF2的， 使铁磁层 /Ru/铁磁层结钩的 ] 层的偏置场和 自由层的偏置场正交垂直。
散场偏置——在该项技术中， Fe、 Co、 Cr和 Pt等永磁合金 感元件表面或 磁隧道结上， 用于提供散磁场以偏置 ΜΉ 元件的输出曲线。 永磁偏置的一个优势是可以在 电桥构成以后的使用一个大的磁场初始化永磁体。 另夕卜一个非常重要的优势是偏置场可以消 除 MTJ元件的磁畴以稳定和线性化 MTJ元件的输出。 该设 的巨大优点在于其在设计调整 上具有很大的灵活性。 下面是可以实现的多层膜结构- 种子层 /反铁磁层 1/铁磁层 铁磁层 /绝缘层 /反铁磁层 /厚隔离层 /永磁层 /保护层. . .
其他技术涉及到在 MTJ元件两側设置偏置磁体。
以上调整灵敏度的技术可以单独使 ]¾或将儿种技术结合起来使用。 当将这些可用的儿种技术 结合起来可以使 极高， 从而减少桥式传感器参考臂的 &ίΏ, 提供一个非常稳定〖 当使用交叉偏置场设置 MTJ元件的灵敏度时， 交叉偏置场 Hcross和 Hs存在以下关系:
Η -. (10) 其中 Ks 是自由层的形状各向异性能， Ms 是自由层的饱和磁化强度。 因此， 灵敏度与 Hcross
Figure imgf000008_0001
提供 Hcross的首选方法如图 5所示。 在这里， 参考磁电阻 50位于两个宽磁铁 51之间的狭 小间隙内。 这种摆放方式会产生一强偏置场 52 , 使得参考臂对外加磁场相对不敏感。 MTJ 感应元件 53 位于两个相对窄小的永磁体 54 之间的宽地间隙内， 这将产生一个弱偏置场 55。 弱偏置场 55导致了 MTJ感应元件的高灵敏度， MTJ参考元件和 MTJ感应元件以类似 于图 4 中的方式被排列在一个惠斯通电桥中。 永磁体初始化充磁方向为 56, 钉扎层的磁化 方向为 57, 垂直于永磁体磁化方向。
对参考桥式传感器的快速分析表明， 传感器对沿着平行于 ΜΤ,ί元件了 层磁化方向 57的外 加场的灵敏度更高， 其机理如图 6和图 7所示。
如图 6所示， MTJ传感元件 60置于平行于钉扎层磁化方向 57的第一夕卜加磁场 61中。 因为 第一外加磁场 61有一个垂直于自由层磁化方向的分量， 自 ffl层磁化方向 64旋转至第一外加 磁场 61 , 因此 MTJ传感元件 60的阻值随着其自由层磁化方向和钉扎层的磁化方向 57的夹 角的改变而改变。
如图 7所示， 第二外加磁场 65平行于 MTJ元件 67的长轴方向 66时， 和长轴方向 66相同 的自由层磁化方向 68没有扭矩， 因为第二外加磁场 65沿着自由层磁化方^ 68没有垂直分 量。 传感元件 67的电阻因此不会随着平行于 X轴 66且垂直于钉礼层的磁化方向 57的外场 的改变而改变。 因此这种参考桥式传感器的设计只对沿平行于 T扎层磁化方向 57 的外场敏 感。 如果采用永磁体 69进行偏置， 永磁体 69的磁化方向主要沿着图 7中的箭头 56所指示 的方向， 与钉扎层的磁化方向 62平行。
图 8是参考桥式传感器的标准输出曲线 70。 外场 HY71是沿着钉扎层的磁化方向， 其输出曲 线是从负到正的倾斜曲线， 通过最低负值 73和最高正值 72的峰。 外场 71的输出曲线 70在 72和 73之间的大范围内是线性的。
推挽桥式传感器- 推挽桥式传感器可由以下方式或以下方式的结合偏置自由层磁化方^ :
形状各向异性能 ·利用 MTJ元件的各向异性能对磁性自由层磁化方向进行偏置， MTJ元 件的长轴是易磁化轴， 通过设置元件的长短轴比可以设置其形状各项异性；
永磁体偏置 在 MTJ元件周围设置永磁体对此性自由层磁化方向进行偏置- 电流线偏置 ·在 MTJ 元件上层或 T层沉积金属导线产生磁场， 从而实现对磁性自由层磁 化方向的偏置；
奈尔耦合 利用磁性 T扎层和磁性自由层间的奈尔耦合场对磁性自由层磁化方向进行偏 置；
交换偏置——该技术是通过 MTJ 元件自由层和相邻的弱反铁磁层的交换耦合作用创建一个 有效的垂直于敏感方向的外场。 可以在自由层和交换偏置层间设置 Cu或 Ta的隔离层来降低 交换偏置强度。
具体方法可参见专利； 单一芯片桥式传感器 （申请号： 201 120097042.3 )。 图 9是推挽桥式传感器的原理图。 如图所示， 两个传感器元件 R12 80、 R21 81与另外两个 传感元件 R11 82、 R22 83 的自由层磁化方向相对倾斜， 这样夕卜场将会导致两个传感电阻 RI 2和 R21 阻值的增加， 同时另外两个传感电阻！122和 R2〗 的阻值相应地降低， 这使得电 桥输出加倍。 改变外加磁场的方向会使得 R22和 R1 1阻值增加， 同^ R21和 R 12阻值相应 地降低。 其响应扔然是一倍， 但是输出的极性发生了改变。 使用两对传感器的组合测量外场 有相反的响应 一对阻值增加另一对阻值降低 这样可以增加桥式电路的响应， 因此 被称为 "推挽式"桥式电路。
(12)
+環 /-/
R22(H)
V2(H) 03)
R2l{ H R22{ H 桥式传感器的输出被定义为;
V2{ (14) 在推挽式桥式电路中， 不同的 MTJ元件的响应为
Ra— It Κ 、H1 + Rr
i?l 1(1/) = R22(H {- H ~ H ) + (15)
2HS 2
R2l{H、)， RH - R,
(16)
2H ^ 2
!TO
RH RL、H、 V.. ( 17)
为了描述推挽桥式传感器的主要特征， 采用旋转设置的 MTJ 元件永磁体偏置的结构的两种 实施飼以下将会讨论。 而不带偏置场的传感器结构相对来说更容易集成为双轴传感器。 图 10给出了一种推挽桥式传感器的概念结构图。 如图所示， 条形永磁体 90之间的磁场方向 与钉扎层的磁化方向 91平行， 因此提供给 MTJ元件 92和 93—偏置场， 从而导致 MTJ元 件 92和 93的自由层磁化方向都有一个沿着钉 层的磁化方向 91 的分量。 除了使用偏置场 磁化外， MTJ元件 92顺着钉钆层磁化方向 91 旋转约 +45 n , MTJ元件 93顺着钉钆层磁化 方向 91旋转约 -45 ° 。
图 11和图 12是推挽桥式传感器的工作方式原理示意图。
如图 11所示， 当第一外加磁场 61平行于钉扎层的磁化方向 57时， 传感元件 92和 93的自 由层的磁化方向 101 和 102 都围绕钉 ¾层磁化方向平行或反平行的方向旋转， 但变化量相 同。 响应导致传感元件 92和 93的阻值变化量相同， 这是一种常见的模式旦桥式传感器的输 出没有发生变化。 因此， 桥式传感器对平行或反平行于钉扎层磁化方向 57 的外场分量是不 敏感的。
然而， 如图 12所示， 当第二外加磁场 65垂直于 T扎层的磁化方向 57, 传感元件 92和 93 的阻值会相应发生变化。 在这种情况下， 自由层的磁化方向〗 04和 105会随之旋转 而导致 其磁化分量平行于第二外加磁场 65。 这会导致传感元件 93 的自由层磁化方向远离钉扎层的 磁化方向 57而传感元件 92的自由层的磁化方向靠近钉扎层的磁化方向 57。 因此， 传感元 件 93 的阻值会随之增加， 传感元件 92 的阻值会随之减小， 阻值的变化不再是常见的模 式， 桥式电路的输出会随之增加。 第二外加磁场 65改变为垂直方向会导致元件 93的阻值减 小而元件 92的阻值增加， 从而改变电桥输出的极性。
推挽桥式传感器的灵敏度输出随平行或垂直于钉扎层磁化方向来调整， 这取决于因子 « ½， 自 ώ层磁化范围隨钉 ft层磁化方向的相对旋转而减小， 从而导致最大输出电压的降低。
Figure imgf000011_0001
式 （18 ) 是在同一基板上集成的参考桥式传感器的灵敏度方程。
图 13 是推挽桥式传感器的典型输出曲线， 该输出曲线为在垂直于钉 ft层的磁化方向的外场 Hxl l i范围內的倾斜曲线， 其通过负值 112和正值 U3的峰值。 在 112和 113之间， 输出曲 线 1 10随外场 111在大范围内是线性的， 其输出曲线和参考桥相同。 因此单片双轴桥磁传感 器使用 GMR或 MTJ 传感元件的参考电桥和推挽电桥的组合是可行的。 不使用偏置场的双 轴设计很简单， 因为对于参考电桥和推挽电桥， 钉扎方向是共同的， 所以下面着重描述使 ^ 了永磁偏置的情况。
单片双轴传感器的设计：
形成永磁体的场可以被认为是由于虚拟磁荷而在永磁体的边缘形成的， 如图 14和图 15， 这 是磁化的边缘效应产生的。 磁荷随着剩磁 Mr 的大小和方向改变， 同时剩磁的大小和方向与 永磁体边缘的指向相关。
A - Λ/Γ cos(^M¾
∞^Mag ) (19) 这些虚拟磁荷产生了一个磁场 -
Hif) - 4π J Α一, 2 dS' (20)
Surface V "' Γ )
永磁体 120和 122之间磁场的方向是由磁荷的位置决定的， 而不是由永磁体的方向决定的， 而偏置场 121和 123的大小是由永磁体 120和 122磁化方向决定的。 这种方法使得构建永磁 偏置双轴磁场传感器成为可能。
图 16是永磁体偏置双轴磁场桥式传感器的布局概念图。 推挽桥式传感器 130和参考桥式传 感器 13 : 可以并排放置在同一个基片上， 旦采用相同的工艺制备。 在该设 ^中， 参考桥式传 感器】30的偏置永磁体 133和推挽桥式传感器】31 的偏置永磁体 132呈 90° 排列。 那么， 如果永磁体磁化方向和钉扎层磁化方向呈 45 ϋ ， 则推挽桥式传感器 130 和参考桥式传感器 13 : 两个桥式传感器能获得适当的永磁偏置， 其中， 推挽桥式传感器 30和参考桥式传感器 131分别敏感于外场 134沿 X轴和 Υ轴方 ^的分量。
本发明采用以上结构， 能够实现低成本大规模地在同一半导体基片上集成的制作。
以上对本发明的特定实施例结合图示进行了说明， 很明显， 在不离幵本发明的范围和精神的 基础上， 可以对现有技术和工艺进行很多修改。 在本发明的所属技术领域中， 只要掌握通常 知识， 就可以在本发明的技术要旨范围内， 进行多种多样的变更。

Claims

权利要求-
1. ·种单片双轴桥式磁场传感器， 其特征在于： 它包括一沿 Y 轴方向敏感的参考桥式传感 器和一沿 X 轴方向敏感的推挽桥式传感器， 所述参考桥式传感器包括参考元件和传感元 件， 所述推挽桥式传感器包括传感元件， 其中 X轴和 Y轴相正交。
2. 根据权利要求 1 所述的单片双轴桥式磁场传感器， 其特征在于： 参考桥式传感器为参考 全桥传感器， 推挽桥式传感器为推挽全桥传感器。
3. 根据权利要求 2 所述的单片双轴桥式磁场传感器， 其特征在于： 它还包括一用于偏置的 永磁体以设置参考全桥传感器的参考元件和传感元件之间的灵敏度差和推挽全桥传感器的传 感元件的自 层磁化方向。
4. 根据权利要求 2 所述的单片双轴桥式磁场传感器， 其特征在于： 参考全桥传感器的参考 元件和传感元件具有磁各向异性的形状以设置它们之间的灵敏度差， 推挽全桥传感器的传感 元件具有磁各向异性的形状以设置其自由层磁化方向。
5. 根据权利要求 2 所述的单片双轴桥式磁场传感器， 其特征在于： 它还包括一用于偏置的 永磁体， 参考全桥传感器的参考元件和传感元件以及推挽全桥传感器的传感元件具有磁各向 异性的形状， 永磁体产生的磁偏置场和磁各向异性的形状的磁各向异性能相结合以设置参考 全桥传感器的参考元件和传感元件之间的灵敏度差和推挽全桥传感器的传感元件的自由层磁 化方向。
6. 根据权利要求 i 所述的单片双轴桥式磁场传感器， 其特征在于： 参考桥式传感器为参考 半桥传感器， 推挽桥式传感器为推挽半桥传感器。
7. 根据权利要求 6 所述的单片双轴桥式磁场传感器， 其特征在于： 它还包括一用于偏置的 永磁体以设置参考半桥传感器的参考元件和传感元件之间的灵敏度差和推挽半桥传感器的传 感元件的自 ffl层磁化方向。
8. 根据权利要求 6 所述的单片双轴桥式磁场传感器， 其特征在于： 参考半桥传感器的参考 元件和传感元件具有磁各向异性的形状以设置它们之间的灵敏度差， 推挽半桥传感器的传感 元件具有磁各向异性的形状以设置其自由层磁化方向。
9. 根据权利要求 6 所述的单片双轴桥式磁场传感器， 其特征在于： 它还包括一用于偏置的 永磁体， 参考半桥的参考元件和传感元件以及推挽半桥传感器的传感元件具有磁各向异性的 形状， 永磁体产生的磁偏置场和磁各向异性的形状的磁各向异性能相结合以设置参考半桥传 感器的参考元件和传感元件之间的灵敏度差和推挽半桥传感器的传感元件的自由层磁化方 向。
10. 根据权利要求 1 所述的单片双轴桥式磁场传感器， 其特征在于： 参考桥式传感器包括一 用于包覆住参考元件的屏蔽层以降低参考元件的灵敏度， 屏齩层为高磁导率的铁磁材料。 l 根据权利要求 1 所述的单片双轴桥式磁场传感器， 其特征在于： 参考桥式传感器的传感 元件周边设置有高磁导率的铁磁 料以增加传感元件的灵敏度。
PCT/CN2012/075956 2011-04-06 2012-05-23 单片双轴桥式磁场传感器 WO2012136158A2 (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014502982A JP6193212B2 (ja) 2011-04-06 2012-05-23 シングルチップ２軸ブリッジ型磁界センサ
EP12767837.3A EP2696210B1 (en) 2011-04-06 2012-05-23 Single-chip two-axis bridge-type magnetic field sensor
US14/110,106 US9575143B2 (en) 2011-04-06 2012-05-23 Single-chip two-axis magnetic field sensor

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN 201110084594 CN102226835A (zh) 2011-04-06 2011-04-06 单一芯片双轴磁场传感器及其制备方法
CN201110084594.5 2011-04-06
CN201110315913.9A CN102435963B (zh) 2011-04-06 2011-10-18 单片双轴桥式磁场传感器
CN201110315913.9 2011-10-18

Publications (2)

Publication Number Publication Date
WO2012136158A2 true WO2012136158A2 (zh) 2012-10-11
WO2012136158A3 WO2012136158A3 (zh) 2012-11-29

Family

ID=44807819

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2012/075956 WO2012136158A2 (zh) 2011-04-06 2012-05-23 单片双轴桥式磁场传感器

Country Status (5)

Country Link
US (1) US9575143B2 (zh)
EP (1) EP2696210B1 (zh)
JP (1) JP6193212B2 (zh)
CN (1) CN102226835A (zh)
WO (1) WO2012136158A2 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103076578A (zh) * 2013-02-01 2013-05-01 上海宏力半导体制造有限公司 各向异性磁阻结构磁场强度检测装置
EP2700968A4 (en) * 2011-04-21 2015-06-10 Jiangsu Multidimension Tech Co COMPLETE BRIDGE MAGNETIC FIELD SENSOR WITH MONOPUCE REFERENCE
US9575143B2 (en) 2011-04-06 2017-02-21 MultiDimension Technology Co., Ltd. Single-chip two-axis magnetic field sensor

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202013413U (zh) * 2011-04-06 2011-10-19 江苏多维科技有限公司 单一芯片桥式磁场传感器
CN102226836A (zh) 2011-04-06 2011-10-26 江苏多维科技有限公司 单一芯片桥式磁场传感器及其制备方法
CN102565727B (zh) * 2012-02-20 2016-01-20 江苏多维科技有限公司 用于测量磁场的磁电阻传感器
CN102590768B (zh) * 2012-03-14 2014-04-16 江苏多维科技有限公司 一种磁电阻磁场梯度传感器
US9411024B2 (en) 2012-04-20 2016-08-09 Infineon Technologies Ag Magnetic field sensor having XMR elements in a full bridge circuit having diagonal elements sharing a same shape anisotropy
CN102809665B (zh) 2012-06-04 2016-08-03 江苏多维科技有限公司 一种磁电阻齿轮传感器
CN103076577B (zh) * 2012-08-03 2016-12-21 陈磊 一种检测磁场和加速度的磁阻传感器芯片
CN203133257U (zh) * 2013-03-18 2013-08-14 江苏多维科技有限公司 用于验钞机磁头的tmr半桥磁场梯度传感器芯片
CN104104376B (zh) * 2013-04-01 2018-01-02 江苏多维科技有限公司 推挽式芯片翻转半桥磁阻开关
CN103592608B (zh) 2013-10-21 2015-12-23 江苏多维科技有限公司 一种用于高强度磁场的推挽桥式磁传感器
JP2015133377A (ja) * 2014-01-10 2015-07-23 Tdk株式会社 磁気検出素子および回転検出装置
WO2015116601A1 (en) 2014-01-28 2015-08-06 Crocus Technology Inc. Analog circuits incorporating magnetic logic units
WO2015116600A1 (en) 2014-01-28 2015-08-06 Crocus Technology Inc. Mlu configured as analog circuit building blocks
CN103954920B (zh) * 2014-04-17 2016-09-14 江苏多维科技有限公司 一种单芯片三轴线性磁传感器及其制备方法
US10317480B2 (en) * 2014-10-15 2019-06-11 Infineon Technologies Ag Magneto resistive device
JP6352195B2 (ja) * 2015-01-14 2018-07-04 Tdk株式会社 磁気センサ
CN104677266B (zh) * 2015-01-20 2017-11-10 江苏多维科技有限公司 强磁场误差校准的磁电阻角度传感器及其校准方法
CN104596605B (zh) * 2015-02-04 2019-04-26 江苏多维科技有限公司 一种磁自动化流量记录器
JP2016186476A (ja) * 2015-03-27 2016-10-27 Tdk株式会社 磁気センサ及び磁気式エンコーダ
TWI633321B (zh) 2015-03-30 2018-08-21 財團法人工業技術研究院 用於磁場感測之穿隧磁阻裝置
CN105044631B (zh) * 2015-08-28 2018-08-07 江苏多维科技有限公司 一种半翻转两轴线性磁电阻传感器
CN105136349B (zh) * 2015-09-01 2017-10-13 宁波希磁电子科技有限公司 一种磁性压力传感器
US9739842B2 (en) 2016-01-26 2017-08-22 Nxp Usa, Inc. Magnetic field sensor with skewed sense magnetization of sense layer
US9841469B2 (en) 2016-01-26 2017-12-12 Nxp Usa, Inc. Magnetic field sensor with multiple sense layer magnetization orientations
US9897667B2 (en) 2016-01-26 2018-02-20 Nxp Usa, Inc. Magnetic field sensor with permanent magnet biasing
JP6747836B2 (ja) * 2016-03-23 2020-08-26 アルプスアルパイン株式会社 磁気センサおよびその製造方法
US10545196B2 (en) * 2016-03-24 2020-01-28 Nxp Usa, Inc. Multiple axis magnetic sensor
US10145907B2 (en) 2016-04-07 2018-12-04 Nxp Usa, Inc. Magnetic field sensor with permanent magnet biasing
US9933496B2 (en) 2016-04-21 2018-04-03 Nxp Usa, Inc. Magnetic field sensor with multiple axis sense capability
WO2017212752A1 (ja) * 2016-06-06 2017-12-14 株式会社村田製作所 磁気センサ、電流センサ、および磁気センサの製造方法
CN108983125A (zh) * 2017-06-01 2018-12-11 深迪半导体(上海)有限公司 一种磁阻传感器
US10794968B2 (en) * 2017-08-24 2020-10-06 Everspin Technologies, Inc. Magnetic field sensor and method of manufacture
JP6597820B2 (ja) * 2018-03-12 2019-10-30 Ｔｄｋ株式会社 磁気センサおよび位置検出装置
CN108267632A (zh) * 2018-04-13 2018-07-10 贵州雅光电子科技股份有限公司 一种基于线圈偏置的amr线性传感器及其设计方法
CN108717169B (zh) * 2018-06-22 2020-10-09 钱正洪 一种二维磁场传感器
CN109342978B (zh) * 2018-11-06 2021-03-30 中国石油天然气集团有限公司 大地电磁各向异性采集系统、方法及设备
CN109471051B (zh) * 2018-12-24 2023-12-12 珠海多创科技有限公司 一种tmr全桥磁传感器及其制备方法
CN109633496A (zh) * 2018-12-27 2019-04-16 北京航空航天大学青岛研究院 单、双轴磁场传感器与其制备方法以及设备
CN109883456A (zh) 2019-04-02 2019-06-14 江苏多维科技有限公司 一种磁电阻惯性传感器芯片
US11428758B2 (en) 2019-08-27 2022-08-30 Western Digital Technologies, Inc. High sensitivity TMR magnetic sensor
CN112363097B (zh) * 2020-11-02 2021-09-21 珠海多创科技有限公司 磁电阻传感器芯片
CN113466759B (zh) * 2021-06-30 2023-06-13 山东大学 单、双轴磁阻磁场传感器和制作方法
CN113866690B (zh) * 2021-12-01 2022-10-11 北京芯可鉴科技有限公司 三轴隧穿磁电阻传感器及其制备方法、使用方法
CN114609559B (zh) * 2022-02-22 2023-06-02 电子科技大学 一种三轴霍尔角度传感器
CN116930833B (zh) * 2023-09-18 2024-01-12 江苏多维科技有限公司 磁传感器及其制备方法

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05281319A (ja) * 1992-04-02 1993-10-29 Fujitsu Ltd 磁気センサ
DE4335826A1 (de) * 1993-10-20 1995-04-27 Siemens Ag Meßvorrichtung mit magnetoresistiven Sensoreinrichtungen in einer Brückenschaltung
US6822443B1 (en) * 2000-09-11 2004-11-23 Albany Instruments, Inc. Sensors and probes for mapping electromagnetic fields
JPH11354860A (ja) * 1998-06-10 1999-12-24 Read Rite Smi Kk スピンバルブ磁気変換素子及び磁気ヘッド
US6252796B1 (en) * 1998-08-14 2001-06-26 U.S. Philips Corporation Device comprising a first and a second ferromagnetic layer separated by a non-magnetic spacer layer
DE10009944A1 (de) * 2000-03-02 2001-09-13 Forschungszentrum Juelich Gmbh Anordnung zum Messen eines Magnetfeldes und Verfahren zum Herstellen einer Anordnung zum Messen eines Magnetfeldes
JP3596600B2 (ja) * 2000-06-02 2004-12-02 ヤマハ株式会社 磁気センサ及び同磁気センサの製造方法
JP2002071775A (ja) * 2000-08-31 2002-03-12 Yamaha Corp 磁気センサ
JP3498737B2 (ja) * 2001-01-24 2004-02-16 ヤマハ株式会社 磁気センサの製造方法
US6946834B2 (en) * 2001-06-01 2005-09-20 Koninklijke Philips Electronics N.V. Method of orienting an axis of magnetization of a first magnetic element with respect to a second magnetic element, semimanufacture for obtaining a sensor, sensor for measuring a magnetic field
US6756782B2 (en) * 2001-06-01 2004-06-29 Koninklijke Philips Electronics N.V. Magnetic field measuring sensor having a shunt resistor and method of regulating the sensor
JP2003215222A (ja) * 2002-01-23 2003-07-30 Denso Corp 磁気抵抗効果素子センサ
JP4016857B2 (ja) * 2002-10-18 2007-12-05 ヤマハ株式会社 磁気センサ及びその製造方法
JP3835447B2 (ja) * 2002-10-23 2006-10-18 ヤマハ株式会社 磁気センサ、同磁気センサの製造方法及び同製造方法に適したマグネットアレイ
CN101308200A (zh) 2002-11-29 2008-11-19 雅马哈株式会社 磁传感器及补偿磁传感器的温度相关特性的方法
JP4557134B2 (ja) * 2004-03-12 2010-10-06 ヤマハ株式会社 磁気センサの製造方法、同磁気センサの製造方法に使用されるマグネットアレイ及び同マグネットアレイの製造方法
US7075818B2 (en) * 2004-08-23 2006-07-11 Maglabs, Inc. Magnetic random access memory with stacked memory layers having access lines for writing and reading
JP4329745B2 (ja) * 2005-08-29 2009-09-09 ヤマハ株式会社 巨大磁気抵抗効果素子を用いた磁気センサ及び同磁気センサの製造方法
JP2006098320A (ja) 2004-09-30 2006-04-13 Matsushita Electric Ind Co Ltd 磁気式姿勢検知センサおよびこれを用いた電子機器
EP1834188A1 (en) * 2004-12-28 2007-09-19 Koninklijke Philips Electronics N.V. Bridge type magnetic sensor with tunable characteristic
JP4668818B2 (ja) * 2006-03-13 2011-04-13 アルプス電気株式会社 磁気センサ
JP2008134181A (ja) * 2006-11-29 2008-06-12 Alps Electric Co Ltd 磁気検出装置及びその製造方法
US7635974B2 (en) * 2007-05-02 2009-12-22 Magic Technologies, Inc. Magnetic tunnel junction (MTJ) based magnetic field angle sensor
EP2003462B1 (en) 2007-06-13 2010-03-17 Ricoh Company, Ltd. Magnetic sensor and production method thereof
JP5157611B2 (ja) 2007-06-13 2013-03-06 株式会社リコー 磁気センサ及びその製造方法
WO2009084433A1 (ja) * 2007-12-28 2009-07-09 Alps Electric Co., Ltd. 磁気センサ及び磁気センサモジュール
US7965077B2 (en) 2008-05-08 2011-06-21 Everspin Technologies, Inc. Two-axis magnetic field sensor with multiple pinning directions
JP5174911B2 (ja) * 2008-07-22 2013-04-03 アルプス電気株式会社 磁気センサ及び磁気センサモジュール
JP2010112881A (ja) * 2008-11-07 2010-05-20 Hitachi Metals Ltd 磁気エンコーダ
DE112010000848B4 (de) * 2009-02-17 2018-04-05 Allegro Microsystems, Llc Schaltungen und Verfahren zum Erzeugen eines Selbsttests eines Magnetfeldsensors
US7999337B2 (en) * 2009-07-13 2011-08-16 Seagate Technology Llc Static magnetic field assisted resistive sense element
JP5353536B2 (ja) * 2009-07-31 2013-11-27 大同特殊鋼株式会社 磁気センサ信号処理プログラム及び磁気センサモジュール
US8390283B2 (en) * 2009-09-25 2013-03-05 Everspin Technologies, Inc. Three axis magnetic field sensor
CN102812376B (zh) * 2010-03-12 2016-02-10 阿尔卑斯电气株式会社 磁性传感器和使用磁性传感器的磁性平衡式电流传感器
US8648401B2 (en) * 2010-09-17 2014-02-11 Taiwan Semiconductor Manufacturing Company, Ltd. Domain wall assisted spin torque transfer magnetresistive random access memory structure
US9304151B2 (en) * 2010-10-14 2016-04-05 Hydra-Electric Company Bridge sensor compensation and isolated output
CN102129053B (zh) 2011-01-20 2012-10-10 清华大学 一种基于巨磁电阻效应的测量磁场方向和强度的传感器
US8901924B2 (en) * 2011-02-21 2014-12-02 Everspin Technologies, Inc. Apparatus and method for sequentially resetting elements of a magnetic sensor array
CN102298124B (zh) * 2011-03-03 2013-10-02 江苏多维科技有限公司 一种独立封装的桥式磁场角度传感器
CN202259452U (zh) * 2011-03-03 2012-05-30 江苏多维科技有限公司 单一芯片磁性传感器及其激光加热辅助退火装置
CN102226835A (zh) * 2011-04-06 2011-10-26 江苏多维科技有限公司 单一芯片双轴磁场传感器及其制备方法
CN202305777U (zh) 2011-04-06 2012-07-04 江苏多维科技有限公司 单片双轴桥式磁场传感器
CN102385043B (zh) 2011-08-30 2013-08-21 江苏多维科技有限公司 Mtj三轴磁场传感器及其封装方法
CN102426344B (zh) 2011-08-30 2013-08-21 江苏多维科技有限公司 三轴磁场传感器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2696210A4

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9575143B2 (en) 2011-04-06 2017-02-21 MultiDimension Technology Co., Ltd. Single-chip two-axis magnetic field sensor
EP2700968A4 (en) * 2011-04-21 2015-06-10 Jiangsu Multidimension Tech Co COMPLETE BRIDGE MAGNETIC FIELD SENSOR WITH MONOPUCE REFERENCE
CN103076578A (zh) * 2013-02-01 2013-05-01 上海宏力半导体制造有限公司 各向异性磁阻结构磁场强度检测装置

Also Published As

Publication number Publication date
EP2696210A4 (en) 2015-06-10
US9575143B2 (en) 2017-02-21
US20140035573A1 (en) 2014-02-06
EP2696210B1 (en) 2018-07-25
EP2696210A2 (en) 2014-02-12
CN102226835A (zh) 2011-10-26
WO2012136158A3 (zh) 2012-11-29
JP6193212B2 (ja) 2017-09-06
JP2014515470A (ja) 2014-06-30

Similar Documents

Publication Publication Date Title
WO2012136158A2 (zh) 单片双轴桥式磁场传感器
EP2752675B1 (en) Mtj three-axis magnetic field sensor and encapsulation method thereof
US10060941B2 (en) Magnetoresistive gear tooth sensor
US9722175B2 (en) Single-chip bridge-type magnetic field sensor and preparation method thereof
JP6403326B2 (ja) 電流センサ
US10718830B2 (en) Magnetoresistive sensor
CN102435963B (zh) 单片双轴桥式磁场传感器
WO2012092831A1 (zh) 薄膜磁电阻传感元件和其组合及与该组合耦合的电子装置
WO2012136134A1 (zh) 单一芯片推挽桥式磁场传感器
WO2014190907A1 (zh) 单芯片桥式磁场传感器
WO2013029510A1 (zh) 三轴磁场传感器
WO2015058632A1 (zh) 一种用于高强度磁场的推挽桥式磁传感器
JP7136340B2 (ja) 磁気抵抗素子および磁気センサ
JP2008286739A (ja) 磁界検出器及び回転角度検出装置
JP2008306112A (ja) 磁気抵抗効果膜、磁気センサ及び回転角度検出装置
CN105954692A (zh) 具有改善的灵敏度和线性度的磁传感器
US11199594B2 (en) TMR sensor with magnetic tunnel junctions with a free layer having an intrinsic anisotropy
JP6116694B2 (ja) 磁気抵抗効果素子を備えた磁界検出器、および電流検出器
TW201243874A (en) A stacked spin-valve magnetic sensor and fabrication method thereof

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12767837

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase in:

Ref document number: 2014502982

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 14110106

Country of ref document: US

NENP Non-entry into the national phase in:

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2012767837

Country of ref document: EP