WO2015058632A1 - 一种用于高强度磁场的推挽桥式磁传感器 - Google Patents

一种用于高强度磁场的推挽桥式磁传感器 Download PDF

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WO2015058632A1
WO2015058632A1 PCT/CN2014/088503 CN2014088503W WO2015058632A1 WO 2015058632 A1 WO2015058632 A1 WO 2015058632A1 CN 2014088503 W CN2014088503 W CN 2014088503W WO 2015058632 A1 WO2015058632 A1 WO 2015058632A1
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arm
push
pull
magnetic field
substrate
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PCT/CN2014/088503
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English (en)
French (fr)
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迪克·詹姆斯·G
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江苏多维科技有限公司
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Priority to US15/031,148 priority Critical patent/US9857434B2/en
Priority to EP14855005.6A priority patent/EP3062119B1/en
Priority to JP2016525541A priority patent/JP6461946B2/ja
Publication of WO2015058632A1 publication Critical patent/WO2015058632A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0011—Arrangements or instruments for measuring magnetic variables comprising means, e.g. flux concentrators, flux guides, for guiding or concentrating the magnetic flux, e.g. to the magnetic sensor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors

Definitions

  • the present invention relates to the field of magnetic sensor technology, and in particular to a push-pull bridge type magnetic sensor used in a high-intensity magnetic field.
  • Magnetic sensors are widely used in modern industrial and electronic products to measure magnetic field strength to measure physical parameters such as current, position, and direction.
  • sensors for measuring magnetic fields and other parameters such as Hall elements, Anisotropic Magnetoresistance (AMR) components, or Giant Magnetoresistance (GMR).
  • AMR Anisotropic Magnetoresistance
  • GMR Giant Magnetoresistance
  • the component is a magnetic sensor of the sensitive component.
  • the Hall magnetic sensor can work in a high-intensity magnetic field, it has disadvantages such as low sensitivity, high power consumption, and poor linearity.
  • the sensitivity of the AMR sensor is higher than that of the Hall sensor, its manufacturing process is complicated, its power consumption is high, and it is not suitable for high-intensity magnetic fields.
  • GMR magnetic sensors have higher sensitivity than Hall magnetic sensors, but their linear range is low and they are not suitable for high-intensity magnetic fields.
  • TMR Tunnel MagnetoResistance
  • Hall magnetic sensor Hall magnetic sensor
  • AMR magnetic sensor AMR magnetic sensor
  • GMR magnetic sensor has higher sensitivity, lower power consumption, better linearity and a wider operating range.
  • existing TMR magnetic sensors are still not suitable for operation in high-intensity magnetic fields, and the linear range is not wide enough.
  • the present invention provides a push-pull bridge type magnetic sensor for a high-intensity magnetic field, the sensor comprising a push arm substrate and a pull arm substrate;
  • At least one push arm attenuator and at least one pull arm attenuator are At least one push arm attenuator and at least one pull arm attenuator;
  • the push arm and the push arm attenuator are deposited on the push arm substrate, and the pull arm and the pull arm attenuator are deposited on the pull arm substrate;
  • the long axis direction of the push arm attenuator and the arm attenuator is a Y-axis direction, and the short-axis direction is an X-axis direction;
  • the magnetoresistive sensing elements in the push arm are arranged in a row above or below the push arm attenuator, and the magnetoresistive sensing elements in the arm are arranged in a row above the arm attenuator or Below
  • the magnetization direction of the magnetic pinning layer of the magnetoresistive sensing element on the same substrate is the same, and the magnetizing direction of the magnetic pinning layer of the magnetoresistive sensing element on the arm substrate is opposite to that of the magnetic pinning layer;
  • the sensitive directions of the magneto-resistive sensing elements on the push arm substrate and the pull arm substrate are both in the X-axis direction.
  • each of the push arm attenuators and each of the pull arm attenuators respectively respectively correspond to a column of the magnetoresistive sensing elements, the push arm attenuator on the same substrate or the
  • the magnetoresistive sensing element is a GMR or TMR sensing element.
  • a magnetization direction of the pinned layer of the magnetoresistive sensing element on one of the substrates is a positive X-axis direction
  • the other substrate is The magnetization direction of the pinned layer of the magnetoresistive sensing element is the X-axis negative direction.
  • the magnetoresistive sensing element may bias the magnetic free layer by a combination of an on-chip permanent magnet, an on-chip coil, a double exchange action, a shape anisotropy, or a combination of at least two The direction of magnetization, wherein the direction of the cross-bias field generated by the on-chip permanent magnet and the on-chip coil is the Y-axis direction.
  • the bridge formed by electrically connecting the push arm and the arm is a half bridge, a full bridge or a quasi bridge.
  • the number of magnetoresistive sensing elements on the push arm and the pull arm are the same and parallel to each other.
  • the number of the push arm attenuator and the pull arm attenuator are the same and parallel to each other.
  • the push arm attenuator and the pull arm attenuator are both elongated strip arrays, and the constituent material thereof is a soft ferromagnetic alloy containing one element or at least two elements of Ni, Fe, and Co. .
  • the gain coefficient of the magnetic field at the magneto-resistive sensing element on the push arm and the arm is Asns ⁇ 1.
  • the push arm substrate and the pull arm substrate comprise an integrated circuit or are connected to other substrates including integrated circuits.
  • the integrated circuit is CMOS, BiCMOS, Bipolar, BCDMOS or SOI
  • the push arm is directly deposited on an integrated circuit on the push arm substrate, and the pull arm is directly deposited on the pull arm substrate.
  • the substrate is an ASIC chip, which includes any one or several application circuits of an offset circuit, a gain circuit, a calibration circuit, a temperature compensation circuit, and a logic circuit.
  • the logic circuit is a digital switch circuit or a rotation angle calculation circuit.
  • the invention has the following beneficial effects: low power consumption, small offset, good linearity, wide working range and high magnetic field, and the sensitivity of the design can reach a single chip reference bridge. Designed with a maximum sensitivity of 2 times.
  • FIG. 1 is a schematic structural view of a push-pull bridge type magnetic sensor in the prior art.
  • FIG. 2 is a schematic structural view of a push-pull bridge type magnetic sensor in the present invention.
  • Figure 3 is a magnetic field distribution diagram around the magnetoresistive sensing element.
  • Figure 4 is a graph showing the relationship between the position of the magnetoresistive sensing element and the corresponding gain factor.
  • Figure 5 is a response curve of a magnetoresistive sensing element.
  • Fig. 6 is a graph showing the conversion characteristic of the push-pull bridge type magnetic sensor with or without an attenuator in the present invention.
  • FIG. 1 is a schematic structural view of a single-chip push-pull bridge type magnetic sensor disclosed in the prior art patent application 201310325337.5.
  • the sensor comprises a substrate 1, a pad 6-9 for input and output, a plurality of push arm flux concentrators 12 and a arm flux concentrator 13 which are disposed obliquely above the substrate 1, and are respectively located adjacent to the two
  • the magnetization directions of the pinned layers of the magnetoresistive sensing elements 10 and 11 are the same.
  • the sensor is easily saturated and cannot be used in high-intensity magnetic fields.
  • the sensor includes a push arm substrate 20, a pull arm substrate 21, a plurality of magnetoresistive sensing elements 22, 42, a plurality of push arm attenuators 23, a pull arm attenuator 41, and pads 24-39.
  • the magnetoresistive sensing element 22, the push arm attenuator 23, and the pads 24-31 are deposited on the push arm substrate 20, and the magnetoresistive sensing element 42, the arm fader 41, and the pads 32-39 are deposited on the pull On the arm substrate 21, the push arm substrate 20 and the arm substrate 21 are the same except for the direction.
  • the long axis direction of the push arm attenuator 23 and the arm attenuator 41 is the Y-axis direction, and the short-axis direction is the X-axis direction.
  • the pads 24, 25, 36, 37 serve as a power supply terminal V Bias , a ground terminal GND, a voltage output terminal V+, V-, and pads 26-29, respectively, which are electrically connected to the pads 34, 35, 38, 39, respectively.
  • the magnetoresistive sensing elements 22, 42 are electrically connected to each other to form a push arm and a pull arm, and are arranged in a row below the push arm attenuator 23 and the arm attenuator 41, but are not limited to the above positions.
  • Each of the push arm attenuators and each of the pull arm attenuators are respectively arranged with at least one column of magnetoresistive sensing elements.
  • Each column of magnetoresistive sensing elements may contain one or at least two magnetoresistive sensing elements, and each column of Figure 2 contains six magnetoresistive sensing elements.
  • more push arm attenuators and/or pull arm attenuators can be provided with non-arranged magnetoresistive sensing elements as needed.
  • the push arm attenuators and/or the arm faders of the lower non-arranged magnetoresistive sensing elements are located outside and in the middle of the push arm substrate 20 and the arm substrate 21, respectively.
  • the magnetoresistive sensing elements can also be arranged underneath these push arm attenuators and/or arm attenuators if desired.
  • the number of NS is the number of columns of the magnetoresistive sensing element, and i is a non-negative integer.
  • the magnetoresistive sensing elements 22, 42 may be arranged in a row above the push arm attenuator 23 and the arm attenuator 41, which is not shown in FIG.
  • the magnetization directions of the respective magnetoresistive sensing elements 22 on the same substrate and the pinned layers of the respective magnetoresistive sensing elements 42 are the same, but the magnetization direction of the magnetoresistive sensing element 22 and the pinned layer of the magnetoresistive sensing element 42 are opposite. , respectively, 100, 101, the magnetization direction 101 is the same as the X-axis direction, and the magnetization direction 100 is opposite to the X-axis direction.
  • the sensitive directions of the magnetoresistive sensing elements 22, 42 are all X-axis directions, which may be GMR or TMR sensing elements, the number of magnetoresistive sensing elements 22, 42 being the same and parallel to each other.
  • the magnetoresistive sensing element can bias the magnetization direction of the magnetic free layer by an on-chip permanent magnet, an on-chip coil, double-switching action, shape anisotropy, or any combination thereof.
  • the magnetization direction of the pinned layer is perpendicular, and the direction of the cross-bias field generated by the on-chip permanent magnet and the on-chip coil is the Y-axis direction.
  • the direction of the cross-bias field on the magnetoresistive sensing element 22 and the magnetoresistive sensing element 42 may be opposite, that is, one along the Y-axis and the other along the Y-axis, or the same, that is, both along the Y-axis. Negative to the Y or Y axis.
  • the number of the push arm attenuator 23 and the pull arm attenuator 41 are the same, and may be one or more, 12 in FIG. 2, which are parallel to each other and each are an elongated strip array, and the constituent material is selected from the group consisting of Ni, A soft ferromagnetic alloy composed of one or more elements of Fe and Co, but is not limited to the above materials.
  • An integrated circuit may also be printed on the push arm substrate 20 and the pull arm substrate 21, or may be connected to other substrates printed with integrated circuits.
  • the printed integrated circuit may be CMOS or BiCMOS.
  • the push arm and the pull arm can be directly deposited on the integrated circuit of the corresponding substrate.
  • the push arm substrate 20 and the pull arm substrate may be an ASIC chip, which may include any one or several application circuits of offset, gain, calibration, temperature compensation, and logic, wherein the logic circuit may also be a digital switch. Circuit or rotation angle calculation circuit, but is not limited to the above circuit.
  • pad wire bonding is used for input/output connection
  • semiconductor packaging methods such as flip chip, ball grid array package, wafer level package, and chip package are also available.
  • FIG. 3 is a magnetic field distribution diagram of the magnetoresistive sensing element 22 under the attenuator 23 in an applied magnetic field.
  • the direction of the applied magnetic field is 102.
  • the strength of the magnetic field passing through the attenuator 23 is greatly attenuated, so even if a high-intensity applied magnetic field is applied, the magnetic field can be detected as long as it is within the working magnetic field of the magnetoresistive sensing element 22.
  • the push-pull bridge type magnetic sensor of the present invention is placed in a high-intensity magnetic field, the magnetic sensed by the sensor
  • the field size is the attenuated magnetic field and the sensor will still function as long as it is within its saturation range.
  • the magnetic field distribution around the magnetoresistive sensing element 42 is the same as in FIG. 3 and will not be described here.
  • Figure 4 is a graph showing the relationship between the position of the magnetoresistive sensing elements 22, 42 and the corresponding gain factor. As can be seen from the curve 40 in the figure, the gain coefficient of the magnetic field at the position of the magnetoresistive sensing elements 22, 42 is Asns ⁇ 1. From this curve, it is also possible to conclude that the magnetic field strength passing through the attenuator 23 is greatly attenuated.
  • Figure 5 is a response curve of the magnetoresistive sensing elements 22,42.
  • the direction of the applied magnetic field 102 is parallel to the magnetization direction 47 of the pinned layer, and the intensity of the applied magnetic field is greater than -Bs+Bo 51
  • the magnetization direction 46 of the magnetic free layer is parallel to the direction of the applied magnetic field 102, and thus with the pinned layer.
  • the magnetization direction 47 is parallel, and the magnetoresistive sensing element has the smallest magnetic resistance, that is, R L 48.
  • the magnetization direction 46 of the magnetic free layer is parallel to the direction of the applied magnetic field 102, and thus with the pinned layer.
  • the magnetization direction 47 is anti-parallel, and the magnetoresistive element has the largest reluctance, i.e., R H 49.
  • the intensity of the applied magnetic field 102 is Bo 50
  • the magnetization direction 46 of the magnetic free layer is perpendicular to the magnetization direction 47 of the pinned layer.
  • the reluctance of the magnetoresistive sensing element is the intermediate value of R L 48 and R H 49 .
  • the magnetic field between -Bs+Bo 51 and Bs+Bo 52 is the measurement range of the sensor.
  • the curve 53 is linear between -Bs+Bo 25 and Bs+Bo 26, and the rate of change of resistance is
  • the rate of change of resistance can be up to 200%, and for GMR components, the rate of change of resistance is only 10%.
  • Fig. 6 is a graph showing the conversion characteristic of the push-pull bridge type magnetic sensor of the present invention with or without an attenuator when the magnetoresistive sensor element is a TMR sensor element.
  • Curve 43 corresponds to the absence of an attenuator and curve 44 corresponds to the case of an attenuator.
  • the horizontal axis represents the magnitude of the applied magnetic field
  • the vertical axis represents the ratio between the sensor output voltage and the power supply voltage. Comparing the two curves, it can be seen that after using the attenuator, the linear working range of the sensor is obviously wider, the linearity is better, and the symmetry of the curve origin is better, that is, the offset is smaller.

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Abstract

一种用于高强度磁场的推挽桥式磁传感器，该传感器包括两个基片（20，21）、磁电阻传感元件（22，42）以及推臂衰减器（23）和挽臂衰减器（41）。同一基片（20，21）上磁电阻传感元件（22，42）的钉扎层的磁化方向（100）相同，不同基片上（20，21）的磁电阻传感元件（22，42）的钉扎层的磁化方向（101）相反，其中一个基片（20）上的磁电阻传感元件（22）相互电连接构成推挽电桥的推臂，另一个基片（21）上的磁电阻传感元件（42）相互电连接构成推挽电桥的挽臂。推、挽臂上磁电阻传感元件（22，42）成列排布于推臂衰减器（23）和挽臂衰减器（41）的上方或下方。此传感器可在准桥、半桥、全桥三种电桥结构上得到实现。其具有以下优点：功耗低、偏移量小、线性度好、工作范围宽以及能在高强度磁场中工作等，并且其灵敏度能达到单芯片参考桥式磁传感器的最大灵敏度的2倍。

Description

一种用于高强度磁场的推挽桥式磁传感器 技术领域
本发明涉及磁传感器技术领域，特别涉及一种用于高强度磁场中的推挽桥式磁传感器。
背景技术
磁传感器广泛用于现代工业和电子产品中以感应磁场强度来测量电流、位置、方向等物理参数。在现有技术中，有许多不同类型的传感器用于测量磁场及其他参数，例如霍尔(Hall)元件，各向异性磁电阻(Anisotropic Magnetoresistance,AMR)元件或巨磁电阻(Giant Magnetoresistance,GMR)元件为敏感元件的磁传感器。
霍尔磁传感器虽然能在高强度磁场中工作，但灵敏度很低、功耗大、线性度差等缺点。AMR磁感器虽然灵敏度比霍尔传感器高，但其制造工艺复杂，功耗高，并且不适用于高强度磁场。GMR磁传感器相比霍尔磁传感器有更高的灵敏度，但其线性范围偏低，并且也不适用于高强度磁场。
TMR(Tunnel MagnetoResistance)磁传感器是近年来开始工业应用的新型磁电阻效应传感器，其利用的是磁性多层膜材料的隧道磁电阻效应对磁场进行感应，其相对于霍尔磁传感器、AMR磁传感器以及GMR磁传感器具有更高的灵敏度、更低的功耗、更好的线性度以及更宽的工作范围。但现有的TMR磁传感器仍然不适用于高强度磁场中工作，并且线性范围也不够宽。
发明内容
本发明的目的在于克服现有技术中存在的以上问题，提供一种适用于高强度磁场中的推挽桥式磁传感器。
为实现上述技术目的，达到上述技术效果，本发明提供了一种用于高强度磁场的推挽桥式磁传感器，该传感器包括推臂基片和挽臂基片；
至少一个由一个或多个磁电阻传感元件电连接构成的推臂和至少一个由一个或多个磁电阻传感元件电连接构成的挽臂；
至少一个推臂衰减器和至少一个挽臂衰减器；
所述推臂和所述推臂衰减器沉积在所述推臂基片上，所述挽臂和所述挽臂衰减器沉积在所述挽臂基片上；
所述推臂衰减器和所述挽臂衰减器的长轴方向为Y轴方向，短轴方向为X轴方向；
所述推臂中的磁电阻传感元件成列排布于所述推臂衰减器的上方或下方，所述挽臂中的磁电阻传感元件成列排布于挽臂衰减器的上方或下方；
同一基片上的磁电阻传感元件的磁性钉扎层的磁化方向相同，所述推臂基片与所述挽臂基片上的磁电阻传感元件的磁性钉扎层的磁化方向相反；
所述推臂基片和所述挽臂基片上的磁电阻传感元件的敏感方向均为X轴方向。
优选的，每个所述推臂衰减器和每个所述挽臂衰减器的上方或下方各自分别最多对应一列所述磁电阻传感元件，同一基片上的所述推臂衰减器或所述挽臂衰减器的个数与所述磁电阻传感元件的列数之间的关系如下：NA>＝NS+2i，其中NA为推臂衰减器或挽臂衰减器的个数，NS为磁电阻传感元件的列数，i为非负整数。
优选的，所述磁电阻传感元件为GMR或者TMR传感元件。
优选的，对于所述推臂基片和所述挽臂基片，其中一个基片上的所述磁电阻传感元件的钉扎层的磁化方向为X轴正方向，另一个基片上的所述磁电阻传感元件的钉扎层的磁化方向为X轴负方向。
优选的，在没有外加磁场时，所述磁电阻传感元件可以通过片上永磁体、片上线圈、双交换作用、形状各向异性中的任意一种或者至少两种的结合来偏置磁性自由层的磁化方向，其中，所述片上永磁体和片上线圈所产生的交叉偏置场的方向为Y轴方向。
优选的，所述推臂和所述挽臂电连接构成的电桥为半桥、全桥或准桥。
优选的，所述推臂和所述挽臂上的磁电阻传感元件的数量相同并且相互平行。
优选的，所述推臂衰减器和所述挽臂衰减器的数量相同并且相互平行。
优选的，所述推臂衰减器和所述挽臂衰减器均为细长条形阵列，其组成材料为软铁磁合金，含有Ni、Fe、和Co中的一种元素或至少两种元素。
优选的，所述推臂和所述挽臂上磁电阻传感元件处的磁场的增益系数Asns<1。
优选的，所述推臂基片和所述挽臂基片包括了集成电路，或与包括了集成电路的其它基片相连接。
优选的，所述集成电路为CMOS、BiCMOS、Bipolar、BCDMOS或者SOI，所述推臂直接沉积在所述推臂基片上的集成电路上，所述挽臂直接沉积在所述挽臂基片上的集成电路上。优选的，所述基片为ASIC芯片，其包含有偏移电路、增益(gain)电路、校准电路、温度补偿电路和逻辑(logic)电路中的任一种或几种应用电路。
优选的，所述逻辑电路为数字开关电路或者旋转角度计算电路。
与现有技术相比，本发明具有以下有益效果：功耗低、偏移量小、线性度好、工作范围宽以及适用于高强度磁场，此外，该设计的灵敏度能达到单芯片参考桥式设计的最大灵敏度的2倍。
附图说明
为了更清楚地说明本发明实施例技术中的技术方案，下面将对实施例技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术中推挽桥式磁传感器的结构示意图。
图2为本发明中的推挽桥式磁传感器的结构示意图。
图3为磁电阻传感元件周围的磁场分布图。
图4为磁电阻传感元件所在位置与相对应的增益系数之间的关系曲线。
图5为磁电阻传感元件的响应曲线。
图6为本发明中推挽桥式磁传感器有无衰减器的转换特性曲线。
具体实施方式
下面结合附图及实施例对本发明的发明内容作进一步的描述。
图1为现有技术中专利申请201310325337.5所公开的单芯片推挽桥式磁传感器的结构示意图。该传感器包括基片1，用于输入输出的焊盘6-9，多个倾斜设置在基片1上面的推臂通量集中器12和挽臂通量集中器13，以及分别位于相邻两个推臂通量集中器之间的间隙14和相邻两个挽臂通量集中器之间的间隙15处的磁电阻传感元件10和11。磁电阻传感元件10和11的钉扎层的磁化方向相同。该传感器容易饱和，不能用于高强度的磁场当中。
实施例
图2为本发明中的推挽桥式磁传感器的一种结构示意图。该传感器包括推臂基片20，挽臂基片21，多个磁电阻传感元件22,42，多个推臂衰减器23、挽臂衰减器41，焊盘24-39。其中，磁电阻传感元件22、推臂衰减器23、焊盘24-31沉积于推臂基片20上，磁电阻传感元件42、挽臂衰减器41、焊盘32-39沉积于挽臂基片21上，推臂基片20和挽臂基片21除了方向不同之外，其它都相同。推臂衰减器23和挽臂衰减器41的长轴方向为Y轴方向，短轴方向为X轴方向。焊盘24,25,36,37分别作为电源供应端VBias，接地端GND，电压输出端V+，V-，焊盘26-29分别与焊盘34、35、38、39电连接。磁电阻传感元件22,42分别相互电连接形成推臂和挽臂，并成列排布于推臂衰减器23、挽臂衰减器41的下方，但并不限于以上位置。每个推臂衰减器和每个挽臂衰减器的下方各自分别至多排布有一列磁电阻传感元件。每一列磁电阻传感元件可以含有一个或至少两个磁电阻传感元件，图2中每一列含有6个磁电阻传感元件。推臂基片20和挽臂基片21的两侧各自分别有两个推臂衰减器23和挽臂衰减器41下方没有排布磁电阻传感元件22,42，这是为了使磁电阻传感元件22,42处的磁场分布更加均匀。当然根据需要，可以设置更多的推臂衰减器和/或挽臂衰减器的下方不排 布磁电阻传感元件。优选的，这些下方不排布磁电阻传感元件的推臂衰减器和/或挽臂衰减器分别位于推臂基片20和挽臂基片21的外侧以及最中间。如果有需要，这些推臂衰减器和/或挽臂衰减器的下方也可以排布磁电阻传感元件。同一基片上的推臂衰减器或挽臂衰减器的个数与磁电阻传感元件的列数之间的关系如下：NA>＝NS+2i，其中NA为推臂衰减器或挽臂衰减器的个数，NS为磁电阻传感元件的列数，i为非负整数。此外，磁电阻传感元件22,42也可以成列排布于推臂衰减器23、挽臂衰减器41的上方，图2中未显示出此种情形。
同一基片上的各磁电阻传感元件22以及各磁电阻传感元件42的钉扎层的磁化方向相同，但磁电阻传感元件22与磁电阻传感元件42的钉扎层的磁化方向相反，分别为100,101，磁化方向101与X轴方向相同，磁化方向100与X轴方向相反。磁电阻传感元件22,42的敏感方向均为X轴方向，其可以为GMR或者TMR传感元件，磁电阻传感元件22,42的数量相同并且相互平行。此外，在没有外加磁场时，所述磁电阻传感元件可以通过片上永磁体、片上线圈、双交换作用、形状各向异性或者它们的任意结合来偏置磁性自由层的磁化方向，使其与钉扎层的磁化方向垂直，片上永磁体和片上线圈所产生的交叉偏置场的方向为Y轴方向。磁电阻传感元件22与磁电阻传感元件42上的交叉偏置场的方向可以相反，即一个沿Y轴正向，另一个沿Y轴负向，也可以相同，即均沿Y轴正向或Y轴负向。
推臂衰减器23和挽臂衰减器41的数量相同，可以为一个或多个，在图2中为12个，它们相互平行并且均为细长条形阵列，其组成材料为选自Ni、Fe和Co中的一种或几种元素组成的软铁磁合金，但并不限于以上材料。在推臂基片20和挽臂基片21上也还可以印制有集成电路，或与印制有集成电路的其他基片相连接，优选地，所印制的集成电路可以为CMOS、BiCMOS、Bipolar、BCDMOS或者SOI，当推臂基片20和挽臂基片21上印制有集成电路时，推臂与挽臂便可直接沉积在对应基片的集成电路上面。此外，推臂基片20和挽臂基片可为ASIC芯片，其可含有偏移、增益、校准、温度补偿和逻辑中的任一种或几种应用电路，其中逻辑电路还可以为数字开关电路或者旋转角度计算电路，但并不限于以上电路。
本实施例中是采用焊盘引线键合来进行输入输出连接，也可以采用倒装芯片、球栅阵列封装、晶圆级封装以及板上芯片封装等半导体封装方法。
图3为在衰减器23下方的磁电阻传感元件22在外加磁场中的磁场分布图。图中，外加磁场的方向为102。从图中可以看出，通过衰减器23的磁场强度会大幅衰减，所以即使施加高强度的外加磁场，只要在磁电阻传感元件22的工作磁场范围内，便能检测到此磁场。由此可见，即使把本发明中的推挽桥式磁传感器放置于高强度的磁场中，该传感器所感测到的磁 场大小是衰减后的磁场，只要在其饱和范围之内，此传感器仍然可以正常工作。磁电阻传感元件42周围的磁场分布与图3中相同，在此就不再赘叙。
图4为磁电阻传感元件22,42所在位置与相对应的增益系数之间的关系曲线。从图中曲线40可以看出，磁电阻传感元件22,42所在位置处磁场的增益系数Asns<1。从该曲线也可以得到通过衰减器23的磁场强度会大幅衰减的结论。
图5为磁电阻传感元件22,42的响应曲线。当外加磁场102的方向与钉扎层的磁化方向47平行，同时外加磁场的强度大于-Bs+Bo 51时，磁性自由层的磁化方向46与外加磁场102的方向平行，进而与钉扎层的磁化方向47平行，此时磁电阻传感元件的磁阻最小，即为RL48。当外加磁场102的方向与钉扎层的磁化方向47反平行，同时外加磁场的强度大于Bs+Bo 52时，磁性自由层的磁化方向46与外加磁场102的方向平行，进而与钉扎层的磁化方向47反平行，此时磁电阻传感元件的磁阻最大，即为RH49。当外加磁场102的强度为Bo 50时，磁性自由层的磁化方向46与钉扎层的磁化方向47垂直，此时，磁电阻传感元件的磁阻为RL 48和RH49的中间值，即(RL+RH)/2。-Bs+Bo 51与Bs+Bo 52之间的磁场便是传感器的测量范围。从图中可以看出，曲线53在-Bs+Bo 25与Bs+Bo 26之间呈线性，电阻变化率为
Figure PCTCN2014088503-appb-000001
对于TMR传感元件，其电阻变化率最高可达到200％，对于GMR元件，其电阻变化率最高只有10％。
图6为磁电阻传感元件为TMR传感元件时，本发明中的推挽桥式磁传感器有无衰减器时的转换特性曲线。曲线43对应的是没有衰减器的情形，曲线44对应的是有衰减器的情形。图中横轴为外加磁场的大小，纵轴为传感器输出电压与电源电压之间的比值。对比两曲线可以看出，使用了衰减器之后，传感器的线性工作范围明显变宽，线性度也更好，并且曲线原点上下对称性更好，也就是说偏移量会更小。
以上讨论的是电桥为全桥的情形，由于半桥和准桥的工作原理与全桥相同，在此就不再赘述，上述所得到的结论也同样适用于半桥和准桥结构的推挽桥式磁传感器。
以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (14)

  1. 一种用于高强度磁场的推挽桥式磁传感器，其特征在于：该传感器包括推臂基片和挽臂基片；
    至少一个由一个或多个磁电阻传感元件电连接构成的推臂和至少一个由一个或多个磁电阻传感元件电连接构成的挽臂；
    至少一个推臂衰减器和至少一个挽臂衰减器；
    所述推臂和所述推臂衰减器沉积在所述推臂基片上，所述挽臂和所述挽臂衰减器沉积在所述挽臂基片上；
    所述推臂衰减器和所述挽臂衰减器的长轴方向为Y轴方向，短轴方向为X轴方向；
    所述推臂中的磁电阻传感元件成列排布于所述推臂衰减器的上方或下方，所述挽臂中的磁电阻传感元件成列排布于挽臂衰减器的上方或下方；
    同一基片上的磁电阻传感元件的磁性钉扎层的磁化方向相同，所述推臂基片与所述挽臂基片上的磁电阻传感元件的磁性钉扎层的磁化方向相反；
    所述推臂基片和所述挽臂基片上的磁电阻传感元件的敏感方向均为X轴方向。
  2. 根据权利要求1所述的用于高强度磁场的推挽桥式磁传感器，其特征在于，每个所述推臂衰减器和每个所述挽臂衰减器的上方或下方各自分别最多对应一列所述磁电阻传感元件，同一基片上的所述推臂衰减器或所述挽臂衰减器的个数与所述磁电阻传感元件的列数之间的关系如下：NA>＝NS+2i，其中NA为推臂衰减器或挽臂衰减器的个数，NS为磁电阻传感元件的列数，i为非负整数。
  3. 根据权利要求1所述的用于高强度磁场的推挽桥式磁传感器，其特征在于，所述磁电阻传感元件为GMR或者TMR传感元件。
  4. 根据权利要求1或3所述的用于高强度磁场的推挽桥式磁传感器，其特征在于，对于所述推臂基片和所述挽臂基片，其中一个基片上的所述磁电阻传感元件的钉扎层的磁化方向为X轴正方向，另一个基片上的所述磁电阻传感元件的钉扎层的磁化方向为X轴负方向。
  5. 根据权利要求4所述的用于高强度磁场的推挽桥式磁传感器，其特征在于，在没有外加磁场时，所述磁电阻传感元件可以通过片上永磁体、片上线圈、双交换作用、形状各向异性中的任意一种或者至少两种的结合来偏置磁性自由层的磁化方向，其中，所述片上永磁体和片上线圈所产生的交叉偏置场的方向为Y轴方向。
  6. 根据权利要求1或3所述的用于高强度磁场的推挽桥式磁传感器，其特征在于，所述推臂和所述挽臂电连接构成的电桥为半桥、全桥或准桥。
  7. 根据权利要求1所述的用于高强度磁场的推挽桥式磁场传感器，其特征在于，所述推臂 和所述挽臂上的磁电阻传感元件的数量相同并且相互平行。
  8. 根据权利要求1所述的用于高强度磁场的推挽桥式磁场传感器，其特征在于，所述推臂衰减器和所述挽臂衰减器的数量相同并且相互平行。
  9. 根据权利要求1或8所述的用于高强度磁场的推挽桥式磁场传感器，其特征在于，所述推臂衰减器和所述挽臂衰减器均为细长条形阵列，其组成材料为软铁磁合金，含有Ni、Fe、和Co中的一种元素或多种元素。
  10. 根据权利要求1所述的用于高强度磁场的推挽桥式磁场传感器，其特征在于，所述推臂和所述挽臂上磁电阻传感元件处的磁场的增益系数Asns<1。
  11. 根据权利要求1所述的用于高强度磁场的推挽桥式磁传感器，其特征在于，所述推臂基片和所述挽臂基片包括了集成电路，或与包括了集成电路的其它基片相连接。
  12. 根据权利要求11所述的用于高强度磁场的推挽桥式磁传感器，其特征在于，所述集成电路为CMOS、BiCMOS、Bipolar、BCDMOS或者SOI，所述推臂直接沉积在所述推臂基片上的集成电路上，所述挽臂直接沉积在所述挽臂基片上的集成电路上。
  13. 根据权利要求1所述的用于高强度磁场的推挽桥式磁传感器，其特征在于，所述基片为ASIC芯片，其包含有偏移电路、增益(gain)电路、校准电路、温度补偿电路和逻辑(logic)电路中的任一种或几种应用电路。
  14. 根据权利要求13所述的用于高强度磁场的推挽桥式磁传感器，其特征在于，所述逻辑电路为数字开关电路或者旋转角度计算电路。
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