WO2012111568A1 - 磁気記録用軟磁性合金、スパッタリングターゲット材及び磁気記録媒体 - Google Patents

磁気記録用軟磁性合金、スパッタリングターゲット材及び磁気記録媒体 Download PDF

Info

Publication number
WO2012111568A1
WO2012111568A1 PCT/JP2012/053164 JP2012053164W WO2012111568A1 WO 2012111568 A1 WO2012111568 A1 WO 2012111568A1 JP 2012053164 W JP2012053164 W JP 2012053164W WO 2012111568 A1 WO2012111568 A1 WO 2012111568A1
Authority
WO
WIPO (PCT)
Prior art keywords
group
alloy
elements
elements selected
magnetic
Prior art date
Application number
PCT/JP2012/053164
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
悠子 清水
Original Assignee
山陽特殊製鋼株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 山陽特殊製鋼株式会社 filed Critical 山陽特殊製鋼株式会社
Priority to SG2013058649A priority Critical patent/SG192259A1/en
Priority to CN201280008677.9A priority patent/CN103380458B/zh
Publication of WO2012111568A1 publication Critical patent/WO2012111568A1/ja

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62Record carriers characterised by the selection of the material
    • G11B5/64Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/66Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
    • G11B5/667Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers including a soft magnetic layer
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851Coating a support with a magnetic layer by sputtering
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C45/00Amorphous alloys
    • C22C45/02Amorphous alloys with iron as the major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C45/00Amorphous alloys
    • C22C45/04Amorphous alloys with nickel or cobalt as the major constituent
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Definitions

  • the present invention relates to a soft magnetic alloy for Co-based magnetic recording used as a soft magnetic layer in a perpendicular magnetic recording medium, a sputtering target material, and a magnetic recording medium provided with such a soft magnetic layer.
  • the perpendicular magnetic recording method is a method suitable for increasing the density because the easy axis of magnetization is oriented perpendicularly to the medium surface in the magnetic film of the perpendicular magnetic recording medium.
  • This magnetic recording system has been developed as a multilayer recording medium having a magnetic recording layer with increased recording density, a soft magnetic layer, and an intermediate layer.
  • a CoCrPt—SiO 2 alloy is generally used for the magnetic recording layer.
  • the soft magnetic film layer an alloy in which Zr, Hf, Ta, Nb and B for improving amorphousness are added based on a soft magnetic element such as Co or Fe is disclosed in Japanese Patent Laid-Open No. 2008-299905 (patent) Document 1) and Japanese Patent Application Laid-Open No. 2008-189996 (Patent Document 2).
  • the soft magnetic film layer of this perpendicular magnetic recording medium is required to have high saturation magnetic flux density, high amorphousness, and high corrosion resistance.
  • a soft magnetic film of an Fe—Co—B-based compound As a soft magnetic layer of a two-layer recording medium, a soft magnetic film of an Fe—Co—B-based compound has been proposed.
  • Fe-Co-B targets As disclosed in Japanese Patent Application Laid-Open No. 2004-346423 (Patent Document 3), Fe-Co-B targets have been proposed in which the diameter of the maximum inscribed circle that can be drawn in a region where the boride layer does not exist in the cross-sectional microstructure is 30 ⁇ m or less.
  • the magnetron sputtering method is used for forming the soft magnetic film.
  • This magnetron sputtering method is a sputtering method that enables constrained film formation by placing a magnet behind the target material, leaking magnetic flux to the surface of the target material, and converging the plasma in the leakage magnetic flux region. is there.
  • This magnetron sputtering method is characterized in that magnetic flux leaks to the sputtering surface of the target material. Therefore, when the magnetic permeability of the target material itself is high, sufficient magnetic flux leakage necessary for the magnetron sputtering method is formed on the sputtering surface of the target material. It becomes difficult to do. Therefore, Patent Document 3 has been proposed in view of the requirement that the magnetic permeability of the target material itself must be reduced as much as possible.
  • Patent Document 4 reports the production of a soft magnetic target with improved corrosion resistance without deteriorating magnetic properties. Is not described.
  • the present inventors have recently improved the amorphous properties by adding the (A) group element selected from Ta, Nb and V, and by adding the (B) group element selected from Cr, Mo and W. Hardness is improved, the addition of the (C) group element selected from Ti, Zr and Hf ensures the amorphous nature, and the elements of the (A) group, (B) group and (C) group are corrosion resistant. It was found to be effective for improvement. This makes it possible to provide a soft magnetic alloy for magnetic recording that is excellent in amorphousness, corrosion resistance, and hardness. The amorphous property is effective for reducing noise, the hardness is effective for impact resistance, and the corrosion resistance is effective for reducing the thickness of the carbon film.
  • an object of the present invention is to provide a soft magnetic alloy for perpendicular magnetic recording media excellent in amorphousness, hardness and corrosion resistance, and a sputtering target material for producing a thin film of this alloy.
  • At. %so (A) 0.5% or more of one or more elements selected from the group consisting of Ta, Nb and V, (B) 0.5% or more of one or more elements selected from the group consisting of Cr, Mo and W, (C) 0 to 5% of one or more elements selected from the group consisting of Ti, Zr and Hf, (D) 1 to 30% of one or two elements selected from the group consisting of Ni and Mn, (E) 0 to 5% of one or two elements selected from the group consisting of Al and Cu; (F) 0 to 10% of one or more elements selected from the group consisting of Si, Ge, P, B and C
  • a soft magnetic alloy for magnetic recording comprising the balance Co and Fe and inevitable impurities, The ratio of Fe: Co is 10:90 to 70:30, and the total amount of the (A) group element, (B) group element and (C) group element is 10 to 30% of the alloy.
  • a soft magnetic alloy for recording is provided.
  • a sputtering target material composed of the soft magnetic alloy for magnetic recording of the present invention.
  • a magnetic recording medium comprising a soft magnetic layer composed of the soft magnetic alloy for magnetic recording of the present invention.
  • the soft magnetic alloy for magnetic recording according to the present invention is at. % Of elements selected from the group consisting of (A) Ta, Nb and V, 0.5% or more, and (B) elements selected from the group consisting of Cr, Mo and W 0.5% or more of one or more elements, 0 to 5% of one or more elements selected from the group consisting of (C) Ti, Zr and Hf, and (D) Ni and Mn
  • One or two elements selected from the group are 0-30%
  • (E) one or two elements selected from the group consisting of Al and Cu are 0-5%
  • the ratio of Fe: Co is 10:90 to 70:30, and the total amount of (A) group consisting
  • Fe and Co constitute a soft magnetic element, and are contained in the alloy at a ratio of Fe: Co of 10:90 to 70:30.
  • the ratio of Fe to Co is a parameter that ensures soft magnetism and greatly affects the saturation magnetic flux density, amorphousness, hardness, and corrosion resistance. In particular, when the Fe: Co ratio is less than 10, the saturation magnetic flux density is not sufficient. If it exceeds 70, corrosion resistance deteriorates.
  • (A) Group element is one or more elements selected from the group consisting of Ta, Nb and V, which improve the amorphousness and hardness, and 0.5 at. % Or more, preferably 2 to 20 at. %, More preferably 4 to 15 at. %included. 0.5 at. If it is less than%, the above improvement effect is not sufficient.
  • Group element is one or more elements selected from the group consisting of Cr, Mo and W, which improve the amorphous and corrosion resistance, and 0.5 at. % Or more, preferably 1 to 20 at. %, More preferably 2 to 10 at. %included. 0.5 at. If it is less than%, the above improvement effect is not sufficient.
  • (C) Group element is one or more elements selected from the group consisting of Ti, Zr and Hf, which improve the amorphous property, and 0 to 5 at. %, Preferably 2-4 at. %included. 5 at. If it exceeds 50%, a sufficient saturation magnetic flux density cannot be obtained.
  • the total amount of (A) group element, (B) group element and (C) group element is 10-30 at. %.
  • the (A) group element, the (B) group element, and the (C) group element are all elements that improve the amorphous property and the corrosion resistance, but the total amount of these elements is 10 at. If it is less than%, the effect is not sufficient, while if it exceeds 30%, the saturation magnetic flux density cannot be sufficiently obtained.
  • Group element is one or two kinds of arbitrary elements for adjusting the saturation magnetic flux density selected from the group consisting of Ni and Mn, and 0 to 30 at. %, Preferably more than 0% and 30 at. % Or less, more preferably 10 at. % Or less, more preferably 1 to 5 at. %included. If it is within these ranges, the saturation magnetic flux density can be sufficiently obtained.
  • Group element is one or two optional elements selected from the group consisting of Al and Cu, which improve corrosion resistance, and 0 to 5 at. %, Preferably more than 0% and 5 at. % Or less, more preferably 1 to 4 at. %included. Within these ranges, the amorphous property is unlikely to decrease.
  • Group element is one or more selected from the group consisting of Si, Ge, P, B, and C, and is an arbitrary element that improves amorphousness. %, Preferably more than 0% and 10 at. % Or less, more preferably 1 to 8 at. %included. Within these ranges, the saturation magnetic flux density can be prevented from decreasing without saturating the improvement effect.
  • the sputtering target material according to the present invention is composed of the above-described soft magnetic alloy for magnetic recording.
  • the thickness of the sputtering target material is not particularly limited, normal sputtering can be performed even if the thickness exceeds 5 mm, and is preferably 7 mm or more.
  • a seed layer in a perpendicular magnetic recording medium can be formed on a glass substrate by sputtering a sputtering target material having the same component as that of the seed layer.
  • the thin film formed by sputtering is rapidly cooled.
  • a quenched ribbon manufactured by a single roll type quenching apparatus is used as a test material in the present invention. This is a simple evaluation of the influence of various properties on the properties of the ribbons actually formed by sputtering using the liquid quenching ribbons.
  • Preparation conditions for quenching ribbon As conditions for preparing the quenching ribbon, 20 g of raw materials weighed for each component shown in Tables 1 and 2 were decompressed with a water-cooled copper mold having a diameter of about 40 mm, and arc-dissolved in Ar. A rapidly melted ribbon base material was used.
  • the conditions for preparation of the quenching ribbon are as follows. This molten base material is set in a quartz tube having a diameter of 15 mm by a single roll method, the tap nozzle diameter is 1 mm, the atmospheric pressure is 61 kPa, the spray differential pressure is 69 kPa, the copper roll (diameter is 300 mm).
  • the hot water was discharged at a rotation speed of 3000 rpm and a gap of 0.3 mm between the copper roll and the hot water nozzle.
  • the hot water temperature was set immediately after each molten base material was melted.
  • the following items were evaluated using the thus prepared quenched ribbon as a test material.
  • Quenched ribbon structure Normally, when an X-ray diffraction pattern of an amorphous material is measured, a diffraction peak is not seen, and a halo pattern peculiar to amorphous is obtained. In addition, when it is not completely amorphous, a diffraction peak is observed, but the peak height is lower than that of the crystalline material, and a halo pattern is also observed. Therefore, the amorphous property was evaluated by the following method.
  • a sample was attached to a glass plate with a double-sided tape, and a diffraction pattern was obtained with an X-ray diffractometer.
  • the test material was affixed on the glass plate so that the measurement surface was a copper roll contact surface of a quenched ribbon.
  • the X-ray source was Cu—K ⁇ ray, and measurement was performed at a scan speed of 4 ° / min. In this diffraction pattern, the halo pattern was confirmed as ⁇ , and the case where no halo pattern was observed was evaluated as x.
  • Measurement was performed with a saturated magnetic flux density VSM apparatus (vibrating sample magnetometer) of a rapidly cooled ribbon at an applied magnetic field of 1200 kA / m.
  • the weight of the test material was about 15 mg, the saturation magnetic flux density of 0.3 T or more and less than 1.0 T was marked with ⁇ , and the weight of 1.0 T or more was marked with ⁇ . Those with less than 0.3% were marked with x.
  • Table 1 and Table 2 show the component composition according to the present invention
  • Tables 3 and 4 show the saturation magnetic flux density, amorphousness, corrosion resistance, and hardness as effects thereof.
  • no. No. 34 has a low saturation magnetic flux density because the sum of the contents of the (A) group element and the (B) group element is high.
  • No. No. 35 has a low content of the group (A) element, so that the amorphous property is insufficient and the hardness is low.
  • No. No. 36 has a low content of the group (B) element, so that the amorphous property is insufficient and the corrosion resistance is not sufficient.
  • No. 37 has a high content of the (C) group element and a low saturation magnetic flux density.
  • No. 38 has a high content of the (E) group element and a low saturation magnetic flux density.
  • No. No. 39 has a high content of the (F) group element and a low saturation magnetic flux density, and the corrosion resistance is not sufficient. No. Since the Fe ratio is low, 40 does not have a sufficient saturation magnetic flux density.
  • No. No. 41 has a high Fe ratio and therefore lacks corrosion resistance, particularly corrosion resistance to NaCl.
  • No. 42 has a high content of the (D) group element and a low saturation magnetic flux density.
  • the above powder-filled billet was heated to 1150 ° C., then charged into a constraining container having a diameter of 230 mm, and molded under a pressure of 500 MPa.
  • the solidified molded body produced by the above method was processed into a disk shape having a diameter of 180 mm and a thickness of 7 mm by wire cutting, lathe processing, and planar polishing to obtain a sputtering target material.
  • a sputtered film was formed on a glass substrate using a sputtering target material for these seven kinds of component compositions.
  • the X-ray diffraction pattern is no. 3, no. 11, no. 12, no. 13, no. No. 24 has a halo pattern, and no. 35, no. As for 38, a crystal peak was observed.
  • the corrosion resistance test salt spray test
  • No. 3, no. 11, no. 12, no. 13, no. No. 24 had no fire, no. 35, no. In 38, there was a partial start.
  • the results of the evaluation with the quenched ribbon and the evaluation of the sputtered film formed using the sputtering target material had the same tendency.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)
PCT/JP2012/053164 2011-02-16 2012-02-10 磁気記録用軟磁性合金、スパッタリングターゲット材及び磁気記録媒体 WO2012111568A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
SG2013058649A SG192259A1 (en) 2011-02-16 2012-02-10 Soft magnetic alloy for magnetic recording, sputtering target material, and magnetic recording medium
CN201280008677.9A CN103380458B (zh) 2011-02-16 2012-02-10 磁记录用软磁性合金、溅射靶材及磁记录介质

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011030562A JP5698023B2 (ja) 2011-02-16 2011-02-16 磁気記録用軟磁性合金及びスパッタリングターゲット材ならびに磁気記録媒体
JP2011-030562 2011-02-16

Publications (1)

Publication Number Publication Date
WO2012111568A1 true WO2012111568A1 (ja) 2012-08-23

Family

ID=46672492

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2012/053164 WO2012111568A1 (ja) 2011-02-16 2012-02-10 磁気記録用軟磁性合金、スパッタリングターゲット材及び磁気記録媒体

Country Status (5)

Country Link
JP (1) JP5698023B2 (zh)
MY (1) MY181980A (zh)
SG (2) SG192259A1 (zh)
TW (1) TWI508114B (zh)
WO (1) WO2012111568A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160141158A1 (en) * 2012-06-06 2016-05-19 Hitachi Metals, Ltd. Fe-Co-BASED ALLOY SPUTTERING TARGET MATERIAL, AND METHOD OF PRODUCING SAME

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6116928B2 (ja) * 2013-02-18 2017-04-19 山陽特殊製鋼株式会社 垂直磁気記録媒体における軟磁性膜層用CoFe系合金およびスパッタリングターゲット材
US9548073B1 (en) * 2013-03-13 2017-01-17 WD Media, LLC Systems and methods for providing high performance soft magnetic underlayers for magnetic recording media
JP6405261B2 (ja) * 2014-05-01 2018-10-17 山陽特殊製鋼株式会社 磁気記録用軟磁性合金及びスパッタリングターゲット材並びに磁気記録媒体
SG11201606737UA (en) * 2014-09-04 2016-09-29 Jx Nippon Mining & Metals Corp Sputtering target
WO2016157922A1 (ja) * 2015-03-27 2016-10-06 日立金属株式会社 軟磁性膜および軟磁性膜形成用スパッタリングターゲット
JP6442460B2 (ja) * 2016-10-27 2018-12-19 山陽特殊製鋼株式会社 垂直磁気記録媒体における軟磁性膜層用CoFe系合金およびスパッタリングターゲット材
JPWO2021039710A1 (zh) * 2019-08-26 2021-03-04
TWI739563B (zh) * 2019-08-26 2021-09-11 日商日立金屬股份有限公司 Fe-Co-Si-B-Nb系靶材
WO2021039712A1 (ja) * 2019-08-26 2021-03-04 日立金属株式会社 Fe-Si-B-Nb系ターゲット

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008123602A (ja) * 2006-11-10 2008-05-29 Hitachi Global Storage Technologies Netherlands Bv 垂直磁気記録媒体
JP2008135137A (ja) * 2006-11-29 2008-06-12 Fujitsu Ltd 磁気記録媒体、磁気記録媒体の製造方法及び磁気記録装置
JP2010287269A (ja) * 2009-06-10 2010-12-24 Sanyo Special Steel Co Ltd 垂直磁気記録媒体における軟磁性膜層用CoFeNi系合金およびスパッタリングターゲット材
JP2010287260A (ja) * 2009-06-09 2010-12-24 Hitachi Global Storage Technologies Netherlands Bv 垂直磁気記録媒体

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008123602A (ja) * 2006-11-10 2008-05-29 Hitachi Global Storage Technologies Netherlands Bv 垂直磁気記録媒体
JP2008135137A (ja) * 2006-11-29 2008-06-12 Fujitsu Ltd 磁気記録媒体、磁気記録媒体の製造方法及び磁気記録装置
JP2010287260A (ja) * 2009-06-09 2010-12-24 Hitachi Global Storage Technologies Netherlands Bv 垂直磁気記録媒体
JP2010287269A (ja) * 2009-06-10 2010-12-24 Sanyo Special Steel Co Ltd 垂直磁気記録媒体における軟磁性膜層用CoFeNi系合金およびスパッタリングターゲット材

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160141158A1 (en) * 2012-06-06 2016-05-19 Hitachi Metals, Ltd. Fe-Co-BASED ALLOY SPUTTERING TARGET MATERIAL, AND METHOD OF PRODUCING SAME
US9773654B2 (en) * 2012-06-06 2017-09-26 Hitachi Metals, Ltd. Fe-Co-based alloy sputtering target material, and method of producing same

Also Published As

Publication number Publication date
JP2012169021A (ja) 2012-09-06
SG10201508695WA (en) 2015-11-27
TW201239922A (en) 2012-10-01
TWI508114B (zh) 2015-11-11
SG192259A1 (en) 2013-09-30
CN103380458A (zh) 2013-10-30
MY181980A (en) 2021-01-18
JP5698023B2 (ja) 2015-04-08

Similar Documents

Publication Publication Date Title
JP5698023B2 (ja) 磁気記録用軟磁性合金及びスパッタリングターゲット材ならびに磁気記録媒体
TWI512113B (zh) An alloy for a seed layer of a magnetic recording medium, and a sputtering target
TWI627286B (zh) CoFe-based alloy for soft magnetic film layer and sputtering target for perpendicular magnetic recording medium
TWI478183B (zh) A magneto-magnetic recording medium for magnetic recording and a sputtering target, and a magnetic recording medium
JP6431496B2 (ja) 磁気記録媒体のシード層用合金、スパッタリングターゲット材および磁気記録媒体
JP5631659B2 (ja) 垂直磁気記録媒体用軟磁性合金およびスパッタリングターゲット材並びに磁気記録媒体
JP5714397B2 (ja) 磁気記録用軟磁性合金およびスパッタリングターゲット材並びに磁気記録媒体
TW201323642A (zh) 垂直磁記錄媒體之軟磁性薄膜層用合金及濺鍍靶材
JP5797398B2 (ja) 磁気記録用Ni系合金及びスパッタリングターゲット材ならびに磁気記録媒体
TWI604078B (zh) Perpendicular magnetic recording medium, soft magnetic film layer alloy, sputtering target, and perpendicular magnetic recording medium having a soft magnetic film layer
JP6442460B2 (ja) 垂直磁気記録媒体における軟磁性膜層用CoFe系合金およびスパッタリングターゲット材
CN107251139B (zh) Ni-Cu系磁记录介质的籽晶层用合金和溅射靶材及磁记录介质
JP2020135907A (ja) 垂直磁気記録媒体の軟磁性層形成用スパッタリングターゲット、並びに、垂直磁気記録媒体及びその軟磁性層
WO2017033936A1 (ja) 非磁性かつ非晶質の合金並びに該合金を利用したスパッタリングターゲット材及び磁気記録媒体

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12747539

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12747539

Country of ref document: EP

Kind code of ref document: A1