WO2012109969A1 - 一种在真空或惰性气体环境中用微波辐照制备石墨烯材料的方法 - Google Patents

一种在真空或惰性气体环境中用微波辐照制备石墨烯材料的方法 Download PDF

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WO2012109969A1
WO2012109969A1 PCT/CN2012/071066 CN2012071066W WO2012109969A1 WO 2012109969 A1 WO2012109969 A1 WO 2012109969A1 CN 2012071066 W CN2012071066 W CN 2012071066W WO 2012109969 A1 WO2012109969 A1 WO 2012109969A1
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vacuum chamber
graphene
torr
vacuum
graphite oxide
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瞿研
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无锡第六元素高科技发展有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/15Nano-sized carbon materials
    • C01B32/182Graphene
    • C01B32/184Preparation
    • C01B32/19Preparation by exfoliation
    • C01B32/192Preparation by exfoliation starting from graphitic oxides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00Structure or properties of graphene
    • C01B2204/20Graphene characterized by its properties
    • C01B2204/32Size or surface area

Definitions

  • the present invention relates to the field of graphene preparation technology, and in particular to a method for preparing a graphene material by microwave irradiation in a vacuum or an inert gas atmosphere.
  • Graphene the English name Graphene, is a two-dimensional lattice structure in which carbon atoms are arranged in hexagons. As a single-layer carbon atom planar material, graphene can be obtained by peeling off a graphite material. Graphene crystal film, which was discovered by scientists at the University of Manchester in 2004, has become the focus of attention in the scientific and industrial circles. Graphene has a thickness of only 0.335 nm, which is not only the thinnest of the known materials, but also very strong and hard; as a simple substance, it transmits electrons at room temperature faster than all known conductors and semiconductors (graphene The migration speed of electrons reaches 1/300 of the speed of light).
  • This method is simple and easy to obtain high quality graphene. However, the yield is extremely low, and usually only a few micrometers of graphene are obtained on a Si substrate. Therefore, this method is only suitable for the preparation of graphene in the laboratory, and is not suitable for industrial mass production.
  • Si is removed by heating single crystal 6H-SiC, and a graphene sheet layer is decomposed on a single crystal (0001) plane.
  • the specific process is as follows: A sample obtained by etching with oxygen or hydrogen is heated by electron bombardment under high vacuum to remove oxides. After the Auchen electron spectroscopy is used to determine that the oxide on the surface is completely removed, the sample is heated to a temperature of 1250 to 1450 ° C and then thermostated for 1 minute to 20 minutes to form a very thin graphite layer. Exploration, Berger et al. have been able to controllably prepare single or multiple layers of graphene. Since the thickness is determined by the heating temperature, it is difficult to prepare a graphene having a single thickness in a large area.
  • the method can realize large-size, high-quality graphene preparation, and is a preparation method which is very important for realizing the practical application of the graphene device.
  • the disadvantage is that SiC is too expensive, and the obtained graphene is difficult to transfer to other substrates.
  • the chemical vapor deposition method utilizes the atomic structure of the substrate to epitaxially form graphene.
  • the carbon atoms are dissolved in the metal substrate at a high temperature (1000 ° C), and the carbon solubility of the metal decreases as the temperature decreases.
  • the carbon atoms are supersaturated in the metal, and a large amount of carbon atoms dissolved before they are deposited on the metal surface to form a graphene having a controlled thickness.
  • This method can be used to produce high-quality large-area (cm-size) single-layer or multi-layer graphene, which is currently the most important method for preparing graphene. However, like the heated SiC method, this method is not suitable for producing graphene powder materials.
  • Graphite oxide is formed by the hydrolysis of graphite under the action of strong oxidants such as H 2 S0 4 , HN0 3 , HC10 4 or by electrochemical peroxidation.
  • Graphite oxide is also a layered covalent compound with a interlayer distance of about 0.8 nm (graphite is 0.335 nm) depending on the preparation method. It is considered that the graphite oxide contains a group such as -C-OH, -C-0-C, or even -COOH.
  • the graphite oxide sheet has a strong hydrophilic or polar solvent property due to the presence of polar groups. Therefore, graphite oxide is in an external force, such as Exfoliation in water or other polar solvents under the action of ultrasonic waves to form a single layer of graphene oxide
  • the method dissociates natural graphite powder into a single layer of graphite during oxidation and reduction. Although it only partially reduces its conductivity during the redox process (destroying the high electron mobility of graphene itself), its product has a relatively high powder specific surface area (>700 m 2 /g), and the process is relatively simple, so The method is most suitable for industrial large-scale production of graphene materials.
  • the chemical reduction method can obtain a suspension after reduction of graphene, but the process is cumbersome and is not conducive to mass production.
  • the reducing agent used therein such as hydrazine hydrate, is very toxic, so that this reduction method poses a great threat to human health and environmental protection.
  • the thermal reduction method has the advantages of quickness and complete reduction; however, since heating generally needs to be carried out at a high temperature of 1000 ° C or higher, the energy consumption of the entire process is increased.
  • this method requires relatively expensive equipment such as a high temperature furnace. Microwave irradiation heating has the characteristics of high speed, low cost and simple use.
  • This process can be carried out in a conventional microwave oven, and the black fluffy graphene powder can be obtained within a minute by irradiating the graphite oxide particles.
  • ordinary microwave irradiation is carried out in the air.
  • the graphene obtained by first reduction is easily burned under microwave irradiation and even causes fire, which poses a potential safety threat for large-scale application of this method.
  • the burning of graphene consumes carbon in the product, resulting in a lower final yield.
  • the invention utilizes the characteristics of uniform microwave heating, strong penetrability, concentrated heating target and high power, heats the graphite oxide in a short time, instantaneously heats and reduces the graphite oxide, and rapidly expands to prepare graphene.
  • the raw material used in the present invention is graphite oxide particles, and preferably dried graphite oxide particles are used. This is because the dielectric constant of water and graphite oxide is different. The absorption of microwave by water molecules is better than that of graphite oxide. If the graphite particles contain water, the different absorption of microwaves will cause local heat unevenness, which will affect the final product graphite.
  • the mass of the graphite oxide particles to be added and the particle diameter of the graphite oxide particles to be added in the present invention are not particularly limited, and a typical but non-limiting example is that the particle diameter of the graphite oxide particles added to 16 g is from 1 to 300 mm, which can be based on those skilled in the art. Actually, graphite particles of any particle size within and outside the range are selected for subsequent steps.
  • the step (2a) is evacuated to a vacuum state of 2X10 - 2 -15X10 - 2 torr, for example 2X 10 - 2 torr, 2.1X10 - 2 torr, 2.4X 10 - 2 torr, 4X10 - 2 torr, 4.8X 10- 2 torr, 6X10- 2 torr, 6.1 X 10- 2 torr, 7.3 X 10- 2 torr, 8.6X 10- 2 torr, 9X 10- 2 torr, 11.
  • 2X10 - 2 -15X10 - 2 torr for example 2X 10 - 2 torr, 2.1X10 - 2 torr, 2.4X 10 - 2 torr, 4X10 - 2 torr, 4.8X 10- 2 torr, 6X10- 2 torr, 6.1 X 10- 2 torr, 7.3 X 10- 2 torr, 8.6X 10- 2 torr, 9X 10- 2 torr, 11.
  • the inert gas is injected in a step (2b) such that the pressure in the vacuum chamber is 80 torr, for example, 80 torr, 80.5 torr, 84 torr, 95 torr, 99 torr, 100 torr, l Oltorr, 103.4 torr, 160 torr, 200 torr, 250 torr, 700 torr, lOOOtorr, etc., a preferred 100torr.
  • the step (2c) is evacuated to a vacuum state of 2X10 - 2 -15X10 - 2 torr, for example 2X 10 - 2 torr, 2.6X10 - 2 torr, 3.4X 10 - 2 torr, 4.6X 10 - 2 torr, 5.8X 10- 2 torr, 6.4X 10- 2 torr, 7.1X10- 2 torr, 8.3 X 10- 2 torr, 10.6X 10- 2 torr, 11X10- 2 torr, 11.8X 10- 2 torr, 12.7X 10- 2 torr, 13.5X 10- 2 torr, 14.8X 10- 2 torr, 14.9X 10- 2 torr, 15X10 "2 torr preferably 3X 10- 2 -10 X 10" 2 torr, and most preferably 4 X 10 "2 -8 X 10- 2 torr.
  • 2X 10 - 2 torr preferably 3X 10- 2 -10 X 10" 2 torr, and most X
  • the number of repetitions of the step (2b) and the step (2c) described in the step (2d) is 2-8 times, for example, 2 times, 3 times, 4 times, 6 times, 8 times, preferably 2- 5 times, most preferably 2-3 times.
  • the microwave expansion atmosphere of the graphite oxide particles according to the present invention may be vacuumed or inert gas.
  • the step (2e) may be carried out after the step (2d): the charging does not react with the graphene at all.
  • the inert gas is supplied to the pressure in the vacuum chamber to above 100 Torr; preferably, argon gas is charged, and further, argon gas having a purity of 99.99% is preferably charged.
  • the role of the inert gas in the present invention is to prevent the side reaction of the graphene produced by the microwave expansion, which is the reaction of the graphene with the gas in the vacuum chamber, especially the oxidation reaction with the oxygen therein.
  • the inert gas of the present invention is a gas which does not react with graphite oxide and graphene, and which inert gas is specifically selected, and those skilled in the art can select according to their own professional knowledge. Choose.
  • the invention preferably combines one or at least two of nitrogen, helium, neon, argon, helium, neon, xenon, such as nitrogen, argon, helium, nitrogen/argon, nitrogen/helium.
  • Helium/helium, argon/helium, nitrogen/argon/helium, etc. preferably a combination of nitrogen and/or argon, most preferably 99.999% pure nitrogen and/or 99.99% argon.
  • the microwave irradiation power described in the step (3) of the present invention is 200 watts to 3 megawatts, for example, 200 watts, 210 watts, 270 watts, 385 watts, 400 watts, 560 watts, 1200 watts, 1700 watts, 2600 watts, 2900.
  • the microwave irradiation time is 5 to 500 seconds, such as 5 seconds, 6 seconds, 7 seconds, 16 seconds, 50 seconds, 102 seconds, 110 seconds, 231 seconds, 349 seconds, 420 seconds, 489 seconds, 500 Seconds, etc., preferably from 5 to 300 seconds, further preferably from 5 to 800 seconds.
  • the vacuum chamber of the present invention is a reaction space for the expansion of the graphite oxide particles, and the material of the vacuum chamber must meet at least two requirements: First, the vacuum chamber must ensure that the external microwave can penetrate the cavity wall of the vacuum chamber to act on the graphite oxide particles. Above, that is, materials such as metal that shield the microwave should not be used. Second, the wall of the vacuum chamber should ensure the tightness of the vacuum chamber, that is, ensure that there is no exchange of gas inside and outside the vacuum chamber, that is, porous gas permeability should not be used. Material. Materials which can meet the above two requirements can be used in the present invention, and those skilled in the art have the ability to obtain them.
  • the vacuum chamber of the present invention is made of glass, and further preferably tempered glass and/or heat absorbing glass.
  • the present invention can be realized by an experimental apparatus capable of achieving the above object, and a person skilled in the art can realize a process of preparing a graphene by microwave-expanding graphite oxide in a vacuum and/or an inert gas atmosphere according to his own expertise.
  • a preferred embodiment of the present invention is accomplished in a graphite oxide reduction system comprising an inert gas bottle, an inlet enthalpy, a microwave chamber, a vacuum chamber, an outlet enthalpy, an aspirating mechanical pump, and a vacuum gauge.
  • the graphite oxide reduction system comprises a nitrogen gas cylinder 7, an argon gas cylinder 8, an air inlet ⁇ 1, a microwave chamber 3, a vacuum chamber 6, a vacuum chamber top cover 4, an air outlet ⁇ 2, and an air pumping mechanical pump. 5, Vacuum gauge.
  • the microwave chamber in the graphite oxide reduction system of the present invention is a chamber capable of providing microwaves, and typical, but non-limiting examples are microwave ovens, microwave reactors, etc.; the pumping mechanical pump is not specifically limited, and the vacuum can be The pumping mechanical pump pumped into the cavity can be used in the present invention, for example, a two-stage mechanical pump, a molecular diffusion pump, etc.; the vacuum chamber is a reactor for microwave expansion of graphite oxide, and multiple vacuums can exist simultaneously in the microwave chamber.
  • the cavity is simultaneously subjected to a plurality of microwave expansion reactions, and the number of the vacuum chambers is at least one.
  • Those skilled in the art can select the implementation of the microwave chamber and the pumping mechanical pump and the number of vacuum chambers according to the actual situation and the expertise that they have mastered.
  • the present invention is implemented by the following technical solutions:
  • the method for preparing graphene by microwave expansion of the graphite oxide comprises the following steps:
  • the microwave power is set at 500-10000 W, and the microwave irradiation is 5-300 seconds until the graphite oxide is exploded and dissociated;
  • a second object of the present invention is to provide a graphene powder having a particle diameter of from 1 to 500 ⁇ m, such as 1 ⁇ m, 1.2 ⁇ m, 2.9 ⁇ m, 12 ⁇ m, 29 ⁇ m, 69 ⁇ m, 80 ⁇ m, 120 microns, 341 microns, 350 microns, 450 microns, 500 microns, etc., preferably having a particle size of 1-300 Micron, most preferably having a particle size of from 1 to 100 microns.
  • the graphene powder is prepared by the preparation method described in the present invention.
  • a third object of the present invention is to provide a use of graphene powder, characterized in that the graphene is used for energy storage active materials, preferably for hydrogen storage, lithium ion batteries, supercapacitors or fuel cells, and nanoelectronics. Devices, high frequency circuits, photon sensors, gene electronics sequencing and noise reduction.
  • the present invention has the following beneficial effects:
  • the invention utilizes the characteristics of large concentration of microwave heating and high power, and heats the graphite oxide in a short time, so that the graphite oxide is instantaneously heated and reduced, and rapidly expands to release a large amount of gas.
  • the reaction time is short, and it takes at least 5 seconds to complete the process of graphite graphite expansion.
  • the invention designs a vacuum chamber in the microwave chamber, effectively isolates the contact between oxygen and graphene, avoids the burning of graphene during the high-temperature reduction process, and solves the technical problem of preparing graphene by the existing microwave irradiation method, and improves the Original yield.
  • the equipment used in the invention has a simple, compact and reasonable structure, and the whole production process is energy-saving, high-yield, and easy to realize mass production.
  • Figure 1 is a process flow diagram of a hydration trap reduction process.
  • Figure 2 is a process flow diagram of a heat treatment reduction process.
  • Figure 3 is a process flow diagram of the microwave irradiation reduction method.
  • FIG. 4 is a schematic view of an apparatus for an alternative of the graphite oxide reduction system in the first embodiment of the present invention.
  • Figure 5 is a process flow diagram of the second embodiment.
  • 1 an inlet ⁇ , 2 gas ⁇ , 3 - microwave chamber, 4 a vacuum chamber top cover, 5-exhaust mechanical pump, 6 - vacuum chamber, 7 - nitrogen gas cylinder, 8- argon gas cylinder.
  • the graphite oxide reduction system is composed of a nitrogen gas cylinder 7, an argon gas cylinder 8, an intake manifold 1, a microwave chamber 3, a vacuum chamber 6, a vacuum chamber top cover 4, an outlet port 2, an aspirating mechanical pump 5, and a vacuum gauge.
  • the vacuum chamber 6 is disposed in the microwave chamber 3; the vacuum chamber 6 has an inlet and outlet through the microwave chamber 3 and is connected to an external pumping mechanical pump 5 and a vacuum gauge; the left outlet is connected to the vacuum gauge.
  • the vacuum gauge is connected to the intake port 1 and the decompression port; the two inlet ports 1 are respectively connected to the nitrogen gas cylinder 7, the argon gas cylinder 8, and the right outlet is connected to the outlet gas port 2 and the pumping mechanical pump 5.
  • the microwave chamber is a microwave oven; the pumping mechanical pump is a two-stage mechanical pump.
  • One or more vacuum chambers may be designed in the vacuum chamber, and the vacuum chamber is constructed of a full glassware, and no metal members may be used.
  • the graphene has a particle size of 9 microns.
  • the graphene powder is prepared by using the graphite oxide reduction system of the first embodiment, and includes the following steps:
  • Microwave irradiation step 10 g of dried graphite oxide particles (particle size 1-300 mm) are placed in the vacuum chamber 6 of the microwave chamber 3, and the vacuum chamber top cover 4 is closed; the intake port 1 is closed, and the opening is opened. Exhaust gas 2;
  • FIG. 5 is a process flow diagram of the second embodiment.
  • Embodiment 3 The graphene powder is prepared by using the graphite oxide reduction system of the first embodiment, and includes the following steps:
  • the graphite oxide powder has a particle diameter of 9 ⁇ m.
  • the graphene powder is prepared by using the graphite oxide reduction system of the first embodiment, and the following steps are included: (1) 0.5 g of graphite oxide particles (particle size 1-300 mm) are placed in the vacuum chamber 6 of the microwave chamber 3, and closed. Vacuum chamber top cover 4; open the air outlet , 2, close the intake ⁇ 1;
  • the vacuum chamber top cover 4 is opened, and the graphene after the explosion reduction is collected, and the graphene powder has a particle diameter of 1-100 ⁇ m.
  • the graphene powder is prepared by using the graphite oxide reduction system of the first embodiment, and includes the following steps:
  • the graphene powder is prepared by using the graphite oxide reduction system of the first embodiment, and includes the following steps:
  • the present invention illustrates the detailed process equipment and process flow of the present invention by the above embodiments, but the present invention is not limited to the above detailed process equipment and process flow, that is, it does not mean that the present invention must rely on the above detailed process equipment and The process can only be implemented. It should be apparent to those skilled in the art that any modifications of the present invention, equivalent substitution of the various materials of the products of the present invention, addition of auxiliary components, selection of specific means, and the like, are all within the scope of the present invention.

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Description

一种在真空或惰性气体环境中用微波辐照制备石墨烯材料的方法 技术领域
本发明涉及石墨烯制备技术领域, 具体地涉及一种在真空或惰性气体环境 中用微波辐照制备石墨烯材料的方法。
背景技术
石墨烯, 英文名 Graphene, 是碳原子按照六角排列而成的二维晶格结构。 作为单层碳原子平面材料, 石墨烯可以通过剥离石墨材料而得到。 石墨烯这种 石墨晶体薄膜自 2004年被曼彻斯特大学的科学家发现之后, 就成为科学界和工 业界关注的焦点。石墨烯的厚度只有 0.335纳米,不仅是已知材料中最薄的一种, 还非常牢固坚硬; 作为单质, 它在室温下传递电子的速度比已知所有的导体和 半导体都快 (石墨烯中电子的迁移速度达到了光速的 1/300)。 由于石墨烯的特殊 原子结构, 其中载流子(电子和空穴)的行为必须用相对论量子力学 (Relativistic Quantum Mechanics)才能描绘。 同时, 作为单层碳原子结构, 石墨烯的理论比表 面积高达 2630m2/g。 如此高的比表面积使得以基于石墨烯的材料成为极有前途 的能量储存活性材料, 使得石墨烯材料有可能在储氢、 新型锂离子电池、 超级 电容器或者燃料电池得到应用。
目前有以下几种方法制备这种特殊的材料:
1.轻微摩擦法或撕胶带发 (粘贴 HOPG)
这种方法简单易行, 容易得到高质量的石墨烯。 但是产率极低, 在一块 Si 衬底上通常只能得到若干片微米见方的石墨烯。 因此这种方法只适用于实验室 制备石墨烯, 不适用于工业化大规模生产。
2.加热 SiC法 该法是通过加热单晶 6H-SiC脱除 Si, 在单晶 (0001 )面上分解出石墨烯片 层。 具体过程是: 将经氧气或氢气刻蚀处理得到的样品在高真空下通过电子轰 击加热, 除去氧化物。 用俄歇电子能谱确定表面的氧化物完全被移除后, 将样 品加热使之温度升高至 1250~1450°C后恒温 1分钟到 20分钟, 从而形成极薄的 石墨层, 经过几年的探索, Berger 等人已经能可控地制备出单层或是多层石墨 烯。 由于其厚度由加热温度决定, 制备大面积具有单一厚度的石墨烯比较困难。
该方法可以实现大尺寸, 高质量石墨烯制备, 是一种对实现石墨烯器件的 实际应用非常重要的制备方法, 缺点是 SiC过于昂贵, 并且得到的石墨烯难以 转移到其他衬底上。
3.金属衬底化学气相沉积法
化学气相沉积法是利用衬底的原子结构外延出石墨烯, 首先让碳原子在高 温 (1000°C ) 下溶解到金属衬底中, 金属的碳溶解度随着温度降低而降低。 当 衬底冷却后, 碳原子在金属中达到过饱和状态, 之前溶解的大量碳原子就会析 出到金属表面形成厚度可控的石墨烯。
这种方法可以到高质量大面积 (厘米尺寸) 的单层或者多层石墨烯, 是目 前最为重要的一种石墨烯制备方法。 然而, 同加热 SiC方法一样, 该方法不适 合用来生产石墨烯粉末材料。
4.化学分散法
氧化石墨是石墨在 H2S04、 HN03、 HC104等强氧化剂的作用下, 或电化学 过氧化作用下, 经水解后形成的。 氧化石墨同样是一层状共价化合物, 层间距 离大约为 0.8nm (石墨为 0.335nm) 依制备方法而异。 一般认为, 氧化石墨中含 有 -C-OH、 -C-0-C, 甚至 -COOH等基团。 和石墨不同, 由于极性基团的存在, 氧化石墨片层具有较强的亲水或极性溶剂的特性。 因此, 氧化石墨在外力, 如 超声波的作用下在水中或其它极性溶剂中可以发生剥离, 形成单层氧化石墨烯
(Graphene Oxide )。 制得氧化石墨烯后, 再通过化学还原使所制氧化石墨烯脱 氧重新石墨化, 保持其几何形貌时可恢复部分其导电性。
该方法在氧化和还原过程中将天然石墨粉解离成单层石墨。 虽然在氧化还 原过程中只是部分还原其导电性 (破坏了石墨烯本身的高电子迁移率), 但是其 产品具有相当高的粉末比表面积 (>700m2/g), 且过程相对简单, 因此该方法最 适合工业化大规模生产石墨烯材料。
科研工作者还在积极寻找更好的化学还原方法, 以期提高还原氧化石墨烯 的质量 (主要是导电性)。 目前, 主要有下面几种方法:
( 1 ) 水合阱还原法, 详见图 1工艺流程图。
(2) 热处理还原法, 详见图 1工艺流程图。
(3 ) 微波辐照还原法, 详见图 1工艺流程图。
以上的几种还原方法具有不同的特点。 其中化学还原法可以得到石墨烯还 原之后的悬浮液, 但是其过程繁琐, 不利于大规模生产。 而且其中所用的还原 剂, 比如水合肼具有非常大的毒性, 以至于这个还原方法对人身健康和环境保 护构成了较大的威胁。 热还原方法具有快速和还原比较彻底的优点; 但是由于 加热一般需要在 1000°C以上的高温下进行, 增加了整个过程的能耗。 而且, 这 个方法需要高温加热炉等比较昂贵设备。 微波辐照加热具有速度快, 成本低, 使用简单等特点。 此过程可在普通微波炉中进行, 辐照氧化石墨颗粒一分钟之 内即可得到黑色的蓬松的石墨烯粉末。 但是普通的微波辐照在空气中进行, 先 还原得到的石墨烯在微波辐照下极易燃烧甚至引起火患, 为这个方法的大规模 应用带来了潜在的安全威胁。 而且, 石墨烯的燃烧消耗了产物里的碳, 使得最 终产率较低。 发明内容
针对现有技术的不足, 本发明的目的之一在于提供一种在真空或惰性气体 环境中用微波辐照制备石墨烯材料的方法。 所述方法包括如下歩骤:
( 1 ) 将氧化石墨颗粒置于真空腔内, 密闭;
(2) 驱赶真空腔内的氧气;
(3 ) 微波照射真空腔, 至氧化石墨爆炸解离;
(4) 关闭微波照射, 向真空腔内充入气体至常压;
(5 ) 收集真空腔内的石墨烯粉末。
本发明是利用微波加热均匀、 穿透性强、 加热目标集中、 功率大的特点, 短时间加热氧化石墨, 使氧化石墨瞬间加热还原, 并迅速膨胀的过程制备石墨 烯。
本发明所用原料为氧化石墨颗粒, 优选采用干燥过的氧化石墨颗粒。 这是 因为水和氧化石墨的介电常数不同, 水分子对微波的吸收较氧化石墨要好, 如 果氧化石墨颗粒中含有水, 对微波产生的不同吸收, 会造成局部热量不均匀, 影响最终产物石墨烯的片层结构。 本发明加入的氧化石墨颗粒的质量和氧化石 墨颗粒的粒径没有具体限制, 典型但非限制性的实例为加入 16克的氧化石墨颗 粒的粒径为 1-300毫米,本领域技术人员可以根据实际情况选择所述范围内外的 任意粒径的氧化石墨颗粒进行后续歩骤。
本发明歩骤 (2) 所述的驱赶真空腔内的氧气是通过如下技术方案实现的:
(2a) 将真空腔抽真空;
(2b) 将惰性气体注入真空腔;
(2c) 将真空腔抽真空;
(2d) 重复歩骤 (2b) 和歩骤 (2c), 直至将真空腔内的氧气驱赶干净; 优选地, 歩骤 (2a) 抽真空至真空状态为 2X10—2-15X10— 2torr, 例如 2X 10— 2torr、 2.1X10— 2torr、 2.4X 10— 2torr、 4X10— 2torr、 4.8X 10— 2torr、 6X10— 2torr、 6.1 X 10— 2torr、 7.3 X 10— 2torr、 8.6X 10— 2torr、 9X 10— 2torr、 11. IX 10— 2torr、 12.7X 10— 2torr、 13.8X10—2torr、 14.7X 10—2torr、 14.9X 10—2torr、 15 X 10—2torr等, 进一歩优选 3 X 10 -10 X 10"2torr, 最优选 4-8 X 10—2torr。
优选地, 歩骤 (2b) 惰性气体的注入量为使真空腔内的压力为 80torr, 例 如 80torr、 80.5torr、 84torr、 95torr、 99torr、 100torr、 lOltorr, 103.4torr、 160torr、 200torr、 250torr、 700torr、 lOOOtorr等, 进一歩优选 100torr。
优选地, 歩骤 (2c) 抽真空至真空状态为 2X10—2-15X10— 2torr, 例如 2X 10— 2torr、 2.6X10— 2torr、 3.4X 10— 2torr、 4.6X 10— 2torr、 5.8X 10— 2torr、 6.4X 10— 2torr、 7.1X10— 2torr、 8.3 X 10— 2torr、 10.6X 10— 2torr、 11X10— 2torr、 11.8X 10— 2torr、 12.7X 10— 2torr、 13.5X 10—2torr、 14.8X 10—2torr、 14.9X 10—2torr、 15X10"2torr优选 3X 10—2-10 X 10"2torr, 最优选 4 X 10"2-8 X 10—2torr。
优选地, 歩骤 (2d) 所述的歩骤 (2b) 和歩骤 (2c) 的重复次数为 2-8次, 例如 2次、 3次、 4次、 6次、 8次, 优选 2-5次, 最优选 2-3次。
本发明所述的氧化石墨颗粒的微波膨化的氛围可以是抽真空, 也可以是惰 性气体, 可选地, 在歩骤 (2d) 后进行歩骤 (2e): 充入完全不与石墨烯反应的 惰性气体至真空腔内气压至 lOOtorr以上; 优选充入氩气, 进一歩优选充入纯度 为 99.99%的氩气。
惰性气体在本发明中的作用是防止经过微波膨化制得的石墨烯发生副反 应, 所述的副反应即为石墨烯与真空腔中的气体反应, 尤其是与其中的氧气发 生氧化反应, 因此本发明所述的惰性气体为不与氧化石墨和石墨烯反应的气体, 具体选择何种惰性气体, 本领域技术人员可以根据自己掌握的专业知识进行选 择。 本发明优选氮气、 氦气、 氖气、 氩气、 氪气、 氙气、 氡气中的 1种或至少 2 种的组合, 例如氮气、 氩气、 氦气、 氮气 /氩气、 氮气 /氖气、 氦气 /氙气、 氩气 / 氡气、 氮气 /氩气 /氦气等, 进一歩优选氮气和 /或氩气的组合, 最优选纯度为 99.999%氮气和 /或纯度为 99.99%氩气。
本发明歩骤 (3 ) 所述的微波照射功率为 200瓦 -3万瓦, 例如 200瓦、 210 瓦、 270瓦、 385瓦、 400瓦、 560瓦、 1200瓦、 1700瓦、 2600瓦、 2900瓦、 3000瓦、 6700瓦、 9200瓦、 1.1万瓦、 1.5万瓦、 2.3万瓦、 2.9万瓦、 2.98万瓦、 3万瓦等, 优选 400瓦 -2万瓦, 进一歩优选 500瓦 -1万瓦; 所述微波照射时间为 5-500秒, 例如 5秒、 6秒、 7秒、 16秒、 50秒、 102秒、 110秒、 231秒、 349 秒、 420秒、 489秒、 500秒等, 优选为 5-300秒, 进一歩优选为 5-800秒。
本发明所述的真空腔是氧化石墨颗粒膨化的反应空间, 真空腔的材质必须 至少达到两点要求: 其一, 真空腔必须保证外部的微波能够穿透真空腔的腔壁 作用在氧化石墨颗粒上, 即不应使用金属等对微波有屏蔽作用的材质; 其二, 真空腔的壁材应该保证真空腔的密闭性, 即保证不存在真空腔内外气体的交换, 即不应该使用多孔透气性材质。 能够达到以上两点要求的材质均可用于本发明, 本领域技术人员有能力获得。 优选地, 本发明所述真空腔的材质为玻璃, 进一 歩优选为钢化玻璃和 /或吸热玻璃。
能够达到以上发明目的的实验装置均可实现本发明, 本领域技术人员可以 根据自己掌握的专业知识实现在真空和 /或惰性气体氛围中微波膨化氧化石墨制 备石墨烯的过程。 本发明的优选技术方案是在氧化石墨还原系统中完成, 所述 氧化石墨还原系统包括惰性气体瓶、 进气闽、 微波室、 真空腔体、 出气闽、 抽 气机械泵、 真空计。 可选地, 所述氧化石墨还原系统包括氮气气瓶 7、 氩气气瓶 8、 进气闽 1、 微波室 3、 真空腔体 6、 真空腔顶盖 4、 出气闽 2、 抽气机械泵 5、 真空计。
本发明所述的氧化石墨还原系统中的微波室为能够提供微波的腔室, 典型 但非限制性的实例为微波炉、 微波反应器等; 所述的抽气机械泵没有具体限制, 能够将真空腔体内抽成真空的抽气机械泵均可用于本发明, 例如双级机械泵、 分子扩散泵等; 所述真空腔体为微波膨化氧化石墨的反应器, 在微波室内可以 同时存在多个真空腔体, 同时进行多个微波膨化反应, 真空腔体的个数至少为 1 个。 本领域技术人员可以根据实际情况和自己掌握的专业知识自行选择微波室 和抽气机械泵的实现方式以及真空腔体的个数。
优选地, 本发明通过如下技术方案实现:
所述氧化石墨微波膨化制备石墨烯的方法包括如下歩骤:
( 1 ) 取干燥的氧化石墨颗粒置于微波室的真空腔内, 关闭真空腔顶盖; (2a) 将真空腔内的气压抽至极限真空状态 4-8 X 10— 2torr;
(2b) 将气体注入到真空腔中, 直到气压高过 lOOtorr;
(2c) 将真空腔的气压抽至极限 4-8 X 10—2torr;
(2d)重复歩骤 (2b)和歩骤 (2c) 的操作歩骤 2-3次; 直到将真空腔内的 残余氧气驱赶干净;
(3 )启动微波辐照, 微波功率设置在 500-10000W, 微波辐照 5-300秒, 直 到氧化石墨爆炸解离;
(4) 关闭微波辐照, 将真空腔气压充满到一个大气压状态;
(5 ) 打开真空腔顶盖, 收集爆炸得到的石墨烯粉末。
本发明的目的之二在于提供一种石墨烯粉末, 所述石墨细粉末的粒径为 1-500微米, 例如 1微米、 1.2微米、 2.9微米、 12微米、 29微米、 69微米、 80 微米、 120微米、 341微米、 350微米、 450微米、 500微米等, 优选粒径为 1-300 微米,最优选粒径为 1-100微米。所述石墨烯粉末通过本发明所述的制备方法制 备得到。
本发明的目的之三在于提供一种石墨烯粉末的用途, 其特征在于, 所述石 墨烯用于能量储存活性材料, 优选用于储氢、 锂离子电池、 超级电容器或者燃 料电池, 以及纳电子器件、 高频电路、 光子传感器、 基因电子测序和减少噪音。
与现有技术相比, 本发明具有以下有益效果:
( 1 ) 本发明利用微波加热集中, 功率大的特点, 短时间加热氧化石墨, 使 氧化石墨瞬间加热还原, 并迅速膨胀, 释放出大量气体。 反应时间短, 最少需 要 5秒钟即可完成氧化石墨膨化的过程。
(2) 本发明在微波室内设计真空腔体, 有效隔绝氧气和石墨烯的接触, 避 免高温还原过程中石墨烯的燃烧, 解决了现有微波辐照法制备石墨烯的技术问 题, 提高了还原产率。
(3)本发明所用设备结构简单、 紧凑, 合理, 整个生产工艺节能、 高产率、 容易实现大规模生产。
附图说明
图 1是水合阱还原法的工艺流程图。
图 2是热处理还原法的工艺流程图。
图 3是微波辐照还原法的工艺流程图。
图 4是本发明实施例一中氧化石墨还原系统可选方案的设备示意图。
图 5是实施例二的工艺流程图。
附图标记说明:
1一进气闽、 2出气闽、 3—微波室、 4一真空腔顶盖、 5-抽气机械泵、 6—真 空腔体、 7-氮气气瓶、 8-氩气气瓶。 具体实施方式
为便于理解本发明, 本发明列举实施例如下。 本领域技术人员应该明了, 所述实施例仅仅是帮助理解本发明, 不应视为对本发明的具体限制。
实施例一
氧化石墨还原系统由氮气气瓶 7、 氩气气瓶 8、 进气闽 1、 微波室 3、 真空 腔体 6、 真空腔顶盖 4、 出气闽 2、 抽气机械泵 5、 真空计组成, 如图 4所示, 将真空腔体 6设置在微波室 3中; 该真空腔体 6有进出口穿过微波室 3与外部 的抽气机械泵 5和真空计相连; 左边出口与真空计连接, 真空计和进气闽 1 以 及减压闽相连; 两个进气闽 1分别与氮气气瓶 7、 氩气气瓶 8连接, 右边出口与 出气闽 2和抽气机械泵 5相连。 所述的微波室为微波炉; 所述的抽气机械泵为 双级机械泵。 所述真空腔内可设计一个或多个真空室, 真空室由全玻璃器皿构 成, 不能使用任何金属构件。
采用上述氧化石墨还原系统制备石墨烯粉末, 包括以下歩骤:
( 1 ) 取 0.5g氧化石墨颗粒 (粒径 1-300毫米) 置于微波室 3的真空腔体 6 内, 关闭真空腔顶盖 4; 关闭进气闽 1, 打开出气闽 2;
(2a)开启抽气机械泵 5,将真空腔体 6内的气压抽至极限(4-8 X 10— 2torr) ;
(2b)关闭出气闽 2, 打开进气闽 1 ; 将 99.999%氮气注入到真空腔体 6中, 直到真空腔内气压高过 lOOtorr;
(2c) 关闭进气闽 1, 打开出气闽 2, 将真空腔体 6的气压抽至极限 (4-8 X 10— 2torr) ;
(2d) 重复歩骤 (2a) 和歩骤 (2b) 操作过程 2 次, 将真空腔内的残余氧 气驱赶干净;
(3 ) 关闭进气闽 1、 出气闽 2, 启动微波辐照, 微波功率设置在 500瓦, 微波辐照 5秒, 直到氧化石墨爆炸解离;
(4) 关闭微波辐照, 打开进气闽 1, 向真空腔体 6内充气, 气压充满到一 个大气压状态;
(5 ) 打开真空腔顶盖 4, 收集爆炸还原的氧化石墨粉末, 石墨烯粒径为 9 微米。
实施例二
采用实施例一所述氧化石墨还原系统制备石墨烯粉末, 包括以下歩骤:
( 1 ) 微波辐照歩骤: 取 10g干燥的氧化石墨颗粒 (粒径 1-300毫米) 置于 微波室 3的真空腔体 6内, 关闭真空腔顶盖 4; 关闭进气闽 1, 打开出气闽 2;
(2a)开启抽气机械泵 5,将真空腔体 6内的气压抽至极限(4-8 X 10— 2torr) ;
(2b)关闭出气闽 2, 打开进气闽 1 ; 将 99.999%氮气注入到真空腔体 6中, 直到气压高过 lOOtorr;
(2c) 关闭进气闽 1, 打开出气闽 2, 将真空腔体 6的气压抽至极限 (4-8 X 10— 2torr) ;
(2d) 重复歩骤 (2b) 和歩骤 (2c) 操作过程 2 次, 将真空腔内的残余氧 气驱赶干净;
(3 ) 关闭进气闽 1、 出气闽 2, 启动微波辐照, 微波功率设置在 2000W, 微波辐照 30秒, 直到氧化石墨爆炸解离;
(4) 关闭微波辐照, 打开进气闽 1, 向真空腔体 6内充气, 气压充满到一 个大气压状态;
(5 ) 打开真空腔顶盖 4, 收集爆炸还原的氧化石墨粉末, 氧化石墨粉末粒 径为 9微米。 图 5为实施例二的工艺流程图。
实施例三 采用实施例一所述氧化石墨还原系统制备石墨烯粉末, 包括以下歩骤:
(1) 取 lOOOg干燥的氧化石墨颗粒 (粒径 1-300毫米) 置于微波室 3的真 空腔体 6内, 关闭真空腔顶盖 4; 关闭进气闽 1, 打开出气闽 2;
(2a)开启抽气机械泵 5,将真空腔体 6内的气压抽至极限(4-8X10— 2torr);
(2b)关闭出气闽 2, 打开进气闽 1; 将 99.999%氮气注入到真空腔体 6中, 直到气压高过 lOOtorr;
(2c) 关闭进气闽 1, 打开出气闽 2, 将真空腔体 6的气压抽至极限 (4-8 X10— 2torr);
(2d) 重复歩骤 (2b) 和歩骤 (2c) 操作过程 2 次, 将真空腔内的残余氧 气驱赶干净;
(3) 关闭进气闽 1、 出气闽 2, 启动微波辐照, 微波功率设置在 10000W, 微波辐照 300秒, 直到氧化石墨爆炸解离;
(4) 关闭微波辐照, 打开进气闽 1, 将真空腔体 6气压充满到一个大气压 状态;
(5) 打开真空腔顶盖 4, 收集爆炸还原的氧化石墨粉末, 氧化石墨粉末粒 径为 9微米。
实施例四
采用实施例一所述氧化石墨还原系统制备石墨烯粉末, 包括以下歩骤: (1) 取 0.5g氧化石墨颗粒 (粒径 1-300毫米) 置于微波室 3的真空腔体 6 内, 关闭真空腔顶盖 4; 打开出气闽 2, 关闭进气闽 1;
(2a) 开启抽气机械泵 5, 将真空腔体 6内的气压抽至极限 2X 10— 2torr; (2b)关闭出气闽 2, 打开进气闽 1; 将 99.999%氮气注入到真空腔体 6中, 直到气压达到 lOOtorr; (2c)关闭进气闽 1,打开出气闽 2,将真空腔体 6的气压抽至极限 10— 2torr; (2d) 重复歩骤 (2b) 和歩骤 (2c) 操作过程 3 次; 直到将真空腔内的残 余氧气驱赶干净;
(2e) 关闭出气闽 2, 打开进气闽 1, 将 99.99%氩气注入到真空腔体 6中, 直到气压计显示 lOOtorr;
(3 ) 关闭进气闽 1, 启动微波辐照, 微波功率设置在 500瓦, 微波辐照 20 秒, 直到氧化石墨爆炸解离;
(4) 关闭微波辐照, 打开进气闽 1, 将真空腔体 6气压充满到一个大气压 状态;
(5 )打开真空腔顶盖 4,收集爆炸还原后的石墨烯,石墨烯粉末粒径为 1-100 微米。
实施例五
采用实施例一所述氧化石墨还原系统制备石墨烯粉末, 包括以下歩骤:
( 1 ) 取 0.5g氧化石墨颗粒 (粒径 1-300毫米) 置于微波室 3的真空腔体 6 内, 关闭真空腔顶盖 4; 打开出气闽 2, 关闭进气闽 1 ;
(2a) 开启抽气机械泵 5, 将真空腔体 6内的气压抽至极限 10 X 10— 2torr;
(2b)关闭出气闽 2, 打开进气闽 1 ; 将 99.999%氮气注入到真空腔体 6中, 直到气压达到 80torr;
(2c) 关闭进气闽 1, 打开出气闽 2, 将真空腔体 6 的气压抽至极限 2 X 10"2torr;
(2d) 重复歩骤 (2c) 和歩骤 (2d) 操作过程 5 次; 直到将真空腔内的残 余氧气驱赶干净;
(2e) 关闭出气闽 2, 打开进气闽 1, 将 99.99%氩气注入到真空腔体 6中, 直到气压计显示 lOOtorr;
(3 )关闭进气闽 1, 启动微波辐照, 微波功率设置在 200瓦, 微波辐照 800 秒, 直到氧化石墨爆炸解离;
(4) 关闭微波辐照, 打开进气闽 1, 将真空腔体 6气压充满到一个大气压 状态;
(5 ) 打开真空腔顶盖 4, 收集爆炸还原后的石墨烯, 石墨烯粉末粒径为 50 微米。
实施例六
采用实施例一所述氧化石墨还原系统制备石墨烯粉末, 包括以下歩骤:
( 1 ) 取 0.5g氧化石墨颗粒 (粒径 1-300毫米) 置于微波室 3的真空腔体 6 内, 关闭真空腔顶盖 4; 打开出气闽 2, 关闭进气闽 1 ;
(2a) 开启抽气机械泵 5, 将真空腔体 6内的气压抽至极限 15 X 10— 2torr;
(2b) 关闭出气闽 2, 打开进气闽 1 ; 通过两个进气闽分别将 99.999%氮气 和 99.999%氩气注入到真空腔体 6中, 直到气压高过 150torr;
(2c) 关闭进气闽 1, 打开出气闽 2, 将真空腔体 6的气压抽至极限 10 X 10"2torr;
(2d) 重复歩骤 (2c) 和歩骤 (2d) 操作过程 8 次; 直到将真空腔内的残 余氧气驱赶干净;
(2e) 关闭出气闽 2, 打开进气闽 1, 将 99.99%氩气注入到真空腔体 6中, 直到气压计显示 lOOtorr;
(3 ) 关闭进气闽 1, 启动微波辐照, 微波功率设置在 3万瓦, 微波辐照 20 秒, 直到氧化石墨爆炸解离;
(4) 关闭微波辐照, 打开进气闽 1, 将真空腔体 6气压充满到一个大气压 状态;
(5) 打开真空腔顶盖 4, 收集爆炸还原后的石墨烯, 石墨烯粉末粒径为 1 微米。
申请人声明, 本发明通过上述实施例来说明本发明的详细工艺设备和工艺 流程, 但本发明并不局限于上述详细工艺设备和工艺流程, 即不意味着本发明 必须依赖上述详细工艺设备和工艺流程才能实施。 所属技术领域的技术人员应 该明了, 对本发明的任何改进, 对本发明产品各原料的等效替换及辅助成分的 添加、 具体方式的选择等, 均落在本发明的保护范围和公开范围之内。

Claims

WO 2012/109969 权 利 要 求 书 PCT/CN2012/071066
1、 一种在真空或惰性气体环境中用微波辐照制备石墨烯材料的方法, 其特 征在于,所述方法包括如下歩骤: (1 )将氧化石墨颗粒置于真空腔内,密闭; (2) 驱赶真空腔内的氧气; (3 ) 微波照射真空腔, 至氧化石墨爆炸解离; (4) 关闭 微波照射, 向真空腔内充入气体至常压; (5 ) 收集真空腔内的石墨烯粉末。
2、 如权利要求 1 所述的方法, 其特征在于, 歩骤 (1 ) 所述氧化石墨颗粒 为干燥的氧化石墨颗粒。
3、 如权利要求 1或 2所述的方法, 其特征在于, 优选地, 歩骤 (2) 包括 如下歩骤: (2a) 将真空腔抽真空; (2b) 将惰性气体注入真空腔; (2c) 将真空 腔抽真空; (2d) 重复歩骤 (2b) 和歩骤 (2c), 直至将真空腔内的氧气驱赶干 净;
优选地,歩骤(2a)抽真空至真空状态为 2 X 10-2-15 X 10-2torr,优选 3 X 1()-2-10 X 10"2torr, 最优选 4 X 10"2-8 X 10"2torr;
优选地, 歩骤 (2b) 惰性气体的注入量为使真空腔内的压力为 80torr, 优 优选地,歩骤(2c)抽真空至真空状态为 2 X 10-2-15 X 10-2torr,优选 3 X 1()-2-10 X 10"2torr, 最优选 4 X 10"2-8 X 10"2torr;
优选地, 歩骤 (2d) 所述的歩骤 (2b) 和歩骤 (2c) 的重复次数为 2-8次, 优选 2-5次, 最优选 2-3次;
优选地, 歩骤 (2d) 后进行歩骤 (2e): 充入完全不与石墨烯反应的惰性气 体至真空腔内气压至 lOOtorr以上;优选充入氩气,进一歩优选充入纯度为 99.99% 的氩气。
4、 如权利要求 1-3任一项所述的方法, 其特征在于, 歩骤(2)所述的惰性 气体为不与氧化石墨和石墨烯反应的气体, 优选氮气、 氦气、 氖气、 氩气、 氪 气、 氙气、 氡气中的 1种或至少 2种的组合, 进一歩优选氮气和 /或氩气, 最优 选纯度为 99.999%氮气和 /或纯度为 99.99%氩气。
5、 如权利要求 1-4任一项所述的方法, 其特征在于, 歩骤(3 )所述的微波 照射功率为 200瓦 -3万瓦, 优选 400瓦 -2万瓦, 进一歩优选 500瓦 -1万瓦; 所 述微波照射时间为 5-500秒, 优选为 5-300秒, 进一歩优选为 5-800秒。
6、 如权利要求 1-5任一项所述的方法, 其特征在于, 所述真空腔的材质选 用能用于微波加热, 能抗高压的材质, 优选玻璃, 进一歩优选钢化玻璃和 /或吸 热玻璃。
7、 如权利要求 1-6任一项所述的方法, 其特征在于, 所述石墨烯材料的制 备方法在氧化石墨还原系统中完成, 所述氧化石墨还原系统包括惰性气体瓶、 进气闽、 微波室、 真空腔体、 出气闽、 抽气机械泵、 真空计;
优选地, 所述氧化石墨还原系统包括氮气气瓶 (7)、 氩气气瓶 (8)、 进气 闽 (1 )、 微波室 (3 )、 真空腔体 (6)、 真空腔顶盖 (4)、 出气闽 (2)、 抽气机 械泵 (5)、 真空计;
优选地, 所述真空腔体的个数为 1个。
8、 如权利要求 1-7任一项所述的方法, 其特征在于, 所述方法包括如下歩 骤:
( 1 ) 取干燥的氧化石墨颗粒置于微波室的真空腔内, 关闭真空腔顶盖; (2a) 将真空腔内的气压抽至极限真空状态 4-8 X 10— 2torr;
(2b) 将气体注入到真空腔中, 直到气压高过 lOOtorr;
(2c) 将真空腔的气压抽至极限 4-8 X 10—2torr;
(2d)重复歩骤 (3 )和歩骤(4) 的操作歩骤 2-3次; 直到将真空腔内的残 余氧气驱赶干净; (3)启动微波辐照, 微波功率设置在 500-10000W, 微波辐照 5-300秒, 直 到氧化石墨爆炸解离;
(4) 关闭微波辐照, 将真空腔气压充满到一个大气压状态;
(5) 打开真空腔顶盖, 收集爆炸得到的石墨烯粉末。
9、 一种石墨烯粉末, 其特征在于, 所述石墨烯粉末的粒径为 1-500微米, 优选粒径为 1-300微米, 最优选粒径为 1-100微米; 所述石墨烯粉末由如权利要 求 1-8任一项所述的方法制备得到的。
10、 一种如权利要求 1-9任一项所述的方法制备得到的石墨烯粉末的用途, 其特征在于, 所述石墨烯用于能量储存活性材料, 优选用于储氢、 锂离子电池、 超级电容器或者燃料电池, 以及纳电子器件、 高频电路、 光子传感器、 基因电 子测序和减少噪音。
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