WO2012086703A1 - 光電変換装置 - Google Patents
光電変換装置 Download PDFInfo
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- WO2012086703A1 WO2012086703A1 PCT/JP2011/079676 JP2011079676W WO2012086703A1 WO 2012086703 A1 WO2012086703 A1 WO 2012086703A1 JP 2011079676 W JP2011079676 W JP 2011079676W WO 2012086703 A1 WO2012086703 A1 WO 2012086703A1
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- photoelectric conversion
- light absorption
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 64
- 239000011669 selenium Substances 0.000 claims abstract description 48
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 43
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 30
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000011733 molybdenum Substances 0.000 claims abstract description 28
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 28
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000011593 sulfur Substances 0.000 claims abstract description 26
- 239000010410 layer Substances 0.000 claims description 352
- 230000031700 light absorption Effects 0.000 claims description 80
- 229910052733 gallium Inorganic materials 0.000 claims description 28
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
- 229910052738 indium Inorganic materials 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 18
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 13
- 239000002344 surface layer Substances 0.000 claims description 9
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 8
- 229910052708 sodium Inorganic materials 0.000 claims description 8
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
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- 230000005540 biological transmission Effects 0.000 description 4
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 4
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- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
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- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
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- 229910052802 copper Inorganic materials 0.000 description 2
- CDZGJSREWGPJMG-UHFFFAOYSA-N copper gallium Chemical compound [Cu].[Ga] CDZGJSREWGPJMG-UHFFFAOYSA-N 0.000 description 2
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
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- 229910052796 boron Inorganic materials 0.000 description 1
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- 238000011109 contamination Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
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- 229910003437 indium oxide Inorganic materials 0.000 description 1
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 description 1
- SIXIBASSFIFHDK-UHFFFAOYSA-N indium(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[In+3].[In+3] SIXIBASSFIFHDK-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
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- 150000002751 molybdenum Chemical class 0.000 description 1
- MHWZQNGIEIYAQJ-UHFFFAOYSA-N molybdenum diselenide Chemical compound [Se]=[Mo]=[Se] MHWZQNGIEIYAQJ-UHFFFAOYSA-N 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
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- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
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- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
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- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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Abstract
Description
層3より排出されたセレンを補うべく、焼成後に上述したセレン化工程を行なってもよい。
このとき、中間層8におけるガリウムとインジウムのモル濃度の和に対するガリウムのモル濃度の割合は、30~60%程度であり、光吸収層3におけるガリウムとインジウムのモル濃度の和に対するガリウムのモル濃度の割合よりも10~35%程度大きいとよい。
2:下部電極層(電極層)
3:光吸収層
4:バッファ層
5:上部電極
6:集電電極
7:接続導体
8:中間層
10:光電変換セル
20:光電変換装置
P1~P3:分離溝
Claims (7)
- モリブデンを含む電極層と、
該電極層上に設けられた中間層と、
該中間層上に設けられた、I-B族元素およびIII-B族元素を含み、さらに硫黄およびセレンのうち少なくとも一方の元素を含む光吸収層とを備えており、
前記中間層は、前記光吸収層に含有された前記硫黄および前記セレンのうち少なくとも一方の元素と前記モリブデンとを含む非晶質層を有する、光電変換装置。 - 前記中間層は、前記I-B族元素および前記III-B族元素をさらに含む、請求項1に記載の光電変換装置。
- 前記中間層は、ナトリウムをさらに含む、請求項1に記載の光電変換装置。
- 前記中間層は、酸素をさらに含む、請求項1乃至請求項3のいずれかに記載の光電変換装置。
- 前記電極層および前記光吸収層は、酸素をさらに含んでおり、前記中間層における酸素のモル濃度は、前記電極層および前記光吸収層における酸素のモル濃度よりも大きい、請求項4に記載の光電変換装置。
- 前記光吸収層および前記中間層は、ガリウムおよびインジウムを含んでおり、前記中間層におけるガリウムおよびインジウムのモル濃度の和に対するガリウムのモル濃度の割合は、前記光吸収層におけるガリウムおよびインジウムのモル濃度の和に対するガリウムのモル濃度の割合よりも大きい、請求項1乃至請求項5のいずれかに記載の光電変換装置。
- 前記中間層に接触している前記電極層の表面層は前記モリブデンからなり、
前記表面層の面方位は、(110)面である、請求項1乃至請求項6のいずれかに記載の光電変換装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012549854A JPWO2012086703A1 (ja) | 2010-12-22 | 2011-12-21 | 光電変換装置 |
US13/997,187 US20130299829A1 (en) | 2010-12-22 | 2011-12-21 | Photoelectric conversion device |
Applications Claiming Priority (4)
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JP2016066638A (ja) * | 2014-09-22 | 2016-04-28 | 株式会社東芝 | 光電変換素子、太陽電池及びこれらの製造方法 |
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US20130240009A1 (en) * | 2012-03-18 | 2013-09-19 | The Boeing Company | Metal Dendrite-free Solar Cell |
DE102020203510A1 (de) * | 2020-03-19 | 2021-09-23 | NICE Solar Energy GmbH | Dünnschichtsolarmodul und Herstellungsverfahren |
CN111640808B (zh) * | 2020-04-27 | 2021-12-28 | 中山大学 | 薄膜太阳电池光吸收层硒化过程中调控MoSe2厚度的方法 |
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JP2002319686A (ja) * | 2001-04-23 | 2002-10-31 | Matsushita Electric Ind Co Ltd | 集積型薄膜太陽電池の製造方法 |
JP2004031551A (ja) * | 2002-06-25 | 2004-01-29 | Matsushita Electric Ind Co Ltd | 化合物半導体薄膜の製造方法 |
WO2011108685A1 (ja) * | 2010-03-05 | 2011-09-09 | 株式会社 東芝 | 化合物薄膜太陽電池とその製造方法 |
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US20100132790A1 (en) * | 2005-05-09 | 2010-06-03 | Solaris Nanosciences, Inc. | Rechargeable Dye Sensitized Solar Cell |
US8575478B2 (en) * | 2008-03-07 | 2013-11-05 | Showa Shell Sekiyu K.K. | Integrated structure of CIS based solar cell |
US20100243043A1 (en) * | 2009-03-25 | 2010-09-30 | Chuan-Lung Chuang | Light Absorbing Layer Of CIGS Solar Cell And Method For Fabricating The Same |
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JP2002319686A (ja) * | 2001-04-23 | 2002-10-31 | Matsushita Electric Ind Co Ltd | 集積型薄膜太陽電池の製造方法 |
JP2004031551A (ja) * | 2002-06-25 | 2004-01-29 | Matsushita Electric Ind Co Ltd | 化合物半導体薄膜の製造方法 |
WO2011108685A1 (ja) * | 2010-03-05 | 2011-09-09 | 株式会社 東芝 | 化合物薄膜太陽電池とその製造方法 |
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Cited By (2)
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JP2016066638A (ja) * | 2014-09-22 | 2016-04-28 | 株式会社東芝 | 光電変換素子、太陽電池及びこれらの製造方法 |
US9941434B2 (en) | 2014-09-22 | 2018-04-10 | Kabushiki Kaisha Toshiba | Photoelectric conversion device, solar cell and method for manufacturing photoelectric conversion device |
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