WO2012032451A1 - Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films - Google Patents

Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films Download PDF

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Publication number
WO2012032451A1
WO2012032451A1 PCT/IB2011/053867 IB2011053867W WO2012032451A1 WO 2012032451 A1 WO2012032451 A1 WO 2012032451A1 IB 2011053867 W IB2011053867 W IB 2011053867W WO 2012032451 A1 WO2012032451 A1 WO 2012032451A1
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WO
WIPO (PCT)
Prior art keywords
acid
polishing composition
aqueous
oxide
ceria
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2011/053867
Other languages
English (en)
French (fr)
Inventor
Yuzhuo Li
Jea-Ju Chu
Shyam Sundar Venkataraman
Wei Lan William Chiu
Harvey Wayne Pinder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF China Co Ltd
BASF SE
Original Assignee
BASF China Co Ltd
BASF SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BASF China Co Ltd, BASF SE filed Critical BASF China Co Ltd
Priority to US13/821,746 priority Critical patent/US20130168348A1/en
Priority to RU2013115237/05A priority patent/RU2573672C2/ru
Priority to SG11201606187RA priority patent/SG11201606187RA/en
Priority to CN201180041503.8A priority patent/CN103080256B/zh
Priority to JP2013527714A priority patent/JP5965906B2/ja
Priority to KR1020137008876A priority patent/KR101906135B1/ko
Publication of WO2012032451A1 publication Critical patent/WO2012032451A1/en
Priority to IL224645A priority patent/IL224645A/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/18—Other polishing compositions based on non-waxy substances on other substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Definitions

  • the oxide-to-nitride selectivity should not be too high, in order to avoid dishing, and other damages and defects in the globally planarized , heterogeneous, patterned surface containing silicon oxide, silicon nitride and polysilicon areas.
  • the silicon nitride-to- polysilicon selectivity should also be high.
  • hydroxamic acids specifically mentioned are formohydroxamic acid, acetohydroxamic acid, benzohydroxamic acid, salicylhydroxamic acid, 2-aminobenzohydroxamic acid, 2- chlorobenzohydroxamic acid, 2-fluorobenzohydroxamic acid, 2-nitrobenzohydroxamic acid, 3- nitrobenzohydroxamic acid, 4-aminobenzohydroxamic acid, 4-chlorobenzohydroxamic acid, 4- fluorobenzohydroxamic acid, 4-nitrobenzohydroxamic acid and their salts.
  • the American patent application US 2007/0077865 A1 discloses a ceria-based CMP slurry containing polyethyleneoxides/polypropyleneoxide copolymers preferably from the PluronicTM family sold by BASF.
  • the ceria-based CMP slurry can furthermore contain amino alcohols such as 2-dimethylamino-2-methyl-1 -propanol (DMAMP), 2-amino-2-ethyl-1 -propanol (AMP), 2-(2- aminoethylamino)ethanol, 2-(isopropylamino)ethanol, 2-(methylamino)ethanol, 2- (diethylamino)ethanol, 2-(2-dimethylamino)ethoxy)ethanol, 1 ,1 '-[[3-DMAMP), 2-amino-2-ethyl-1 -propanol (AMP), 2-(2- aminoethylamino)ethanol, 2-(isopropylamino)ethanol, 2-(methylamino)ethanol, 2- (
  • a ceria-based CMP slurry comprising a polysilicon polishing inhibitor which is selected from water-soluble polymers having a N-monosubstituted or N,N-di-substituted skeleton substituted by any members selected from the group consisting of acrylamide, methacrylamide and alpha-substituted derivatives thereof; polyethylene glycols; polyvinylpyrrolidones; alkyloxylated linea r a l iphatic a lcohols and ethyleneoxide adducts of acetylene-based diols.
  • a polysilicon polishing inhibitor which is selected from water-soluble polymers having a N-monosubstituted or N,N-di-substituted skeleton substituted by any members selected from the group consisting of acrylamide, methacrylamide and alpha-substituted derivatives thereof; polyethylene glycols; polyvinylpyrrolidones;
  • any type of abrasive particles (A) can be used in the composition of the invention as long as they possess the above described property profile.
  • the abrasive particles (A) may be organic or inorganic particles or organic-inorganic hybrid particles.
  • the abrasive particles (A) are inorganic particles.
  • Such composite particles (A) are known, for example, from WO 2005/035688 A1 , US 6,1 10,396, US 6,238,469 B1 , US 6,645,265 B1 , K. S. Choi et al., Mat. Res. Soc. Symp. Proc. Vol. 671 , 2001 Materials Research Society, M5.8.1 to M5.8.10, S.-H. Lee et al., J. Mater. Res., Vol. 17, No. 10, (2002), pages 2744 to 2749, A. Jindal et al., Journal of the Electrochemical Society, 150 (5) G314-G318 (2003), Z. Lu, Journal of Materials Research, Vol. 18, No. 10, October 2003, Materials Research Society, or S. Hedge et al., Electrochemical and Solid-State Letters, 7 (12) G316-G318 (2004).
  • the polyethyleneoxide blocks have hydrophile-lipophile-balance (HLB) values from 10 to 15.
  • HLB hydrophile-lipophile-balance
  • the polypropyleneoxide blocks may have a HLB values of from 28 to about 32.
  • the functional component (D) is selected from the group consisting of organic, inorganic and hybrid organic-inorganic abrasive particles being different from the particles (D), materials having a lower critical solution temperature LCST or an upper critical solution temperature UCST, oxidizing agents, passivating agents, charge reversal agents, organic polyols having at least 3 hydroxide groups that are not dissociable in the aqueous medium, oligomers and polymers formed from at least one monomer having at least 3 hydroxide groups that are not dissociable in the aqueous medium, complexing or chelating agents, frictive agents, stabilizing agents, rheology agents, surfactants, metal cations and organic solvents.
  • Suitable organic solvents (D) and their effective amounts are known, for example, from the American patent US 7,361 ,603 B2, column 7, lines 32 to 48 or the American patent application US 2008/0254628 A1 , page 5, paragraph [0059].
  • Suitable materials (D) exhibiting a lower critical solution temperature LCST or an upper critical solution temperature UCST are described, for example, in the article of H. Mori, H. Iwaya, A. Nagai and T. Endo, Controlled synthesis of thermoresponsive polymers derived from L-proline via RAFT polymerization, in Chemical Communication, 2005, 4872-4874; or in the article of D.
  • any known charge reversal agent (D) customarily used in the field of CMP can be used.
  • the charge reversal agent (D) is selected from the group consisting of monomeric, oligomeric and polymeric compounds containing at least one anionic group selected from the group consisting of carboxylate, sulfinate, sulfate and phosphonate groups.
  • the functional component (D) can be contained in varying amounts.
  • the total amount of (D) is not more than 10 wt.% ("wt.%" means "percent by weight"), more preferably not more than 2 wt.%, most preferably not more than 0.5 wt.%, particularly not more than 0.1 wt. % , for example not more than 0.01 wt. % , based on the total weight of the corresponding CMP composition.
  • the total amount of (D) is at least 0.0001 wt.%, more preferably at least 0.001 wt.%, most preferably at least 0.008 wt.%, particularly at least 0.05 wt.%, for example at least 0.3 wt.%, based on the total weight of the corresponding composition.
  • the MRRs of thermal oxide (TOX) , PETEOS, silicon nitride and polysilicon wafers were determined as described. The MRRs obtained are compiled in the Table 3. MRRs of Thermal Oxide (TOX), PETEOS, Silicon Nitride (SiN) and Polysilico

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
PCT/IB2011/053867 2010-09-08 2011-09-05 Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films Ceased WO2012032451A1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US13/821,746 US20130168348A1 (en) 2010-09-08 2011-09-05 Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
RU2013115237/05A RU2573672C2 (ru) 2010-09-08 2011-09-05 Водная полирующая композиция и способ химико-механического полирования подложек, содержащих пленки диэлектрика оксида кремния и поликремния
SG11201606187RA SG11201606187RA (en) 2010-09-08 2011-09-05 Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
CN201180041503.8A CN103080256B (zh) 2010-09-08 2011-09-05 用于化学机械抛光包含氧化硅电介质和多晶硅膜的衬底的含水抛光组合物和方法
JP2013527714A JP5965906B2 (ja) 2010-09-08 2011-09-05 水性研磨組成物、及び酸化ケイ素誘電体膜とポリシリコン膜を含む基板の化学機械的な研磨方法
KR1020137008876A KR101906135B1 (ko) 2010-09-08 2011-09-05 수성 연마 조성물 및 산화규소 유전체 및 폴리실리콘 필름을 함유하는 기판의 화학적 기계적 연마 방법
IL224645A IL224645A (en) 2010-09-08 2013-02-10 Aqueous flashing and process for chemical mechanical polishing of insulated silicon oxide and polysilicon substrates

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US38071910P 2010-09-08 2010-09-08
US61/380,719 2010-09-08

Publications (1)

Publication Number Publication Date
WO2012032451A1 true WO2012032451A1 (en) 2012-03-15

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PCT/IB2011/053867 Ceased WO2012032451A1 (en) 2010-09-08 2011-09-05 Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films

Country Status (11)

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US (1) US20130168348A1 (https=)
EP (1) EP2428541B1 (https=)
JP (1) JP5965906B2 (https=)
KR (1) KR101906135B1 (https=)
CN (1) CN103080256B (https=)
IL (1) IL224645A (https=)
MY (1) MY175638A (https=)
RU (1) RU2573672C2 (https=)
SG (2) SG10201606566SA (https=)
TW (1) TWI525164B (https=)
WO (1) WO2012032451A1 (https=)

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