TWI525164B - 用於包含氧化矽介電質及多矽膜之化學機械研磨基材之水性研磨組成物及方法 - Google Patents

用於包含氧化矽介電質及多矽膜之化學機械研磨基材之水性研磨組成物及方法 Download PDF

Info

Publication number
TWI525164B
TWI525164B TW100132009A TW100132009A TWI525164B TW I525164 B TWI525164 B TW I525164B TW 100132009 A TW100132009 A TW 100132009A TW 100132009 A TW100132009 A TW 100132009A TW I525164 B TWI525164 B TW I525164B
Authority
TW
Taiwan
Prior art keywords
acid
oxide
aqueous
cerium oxide
optical
Prior art date
Application number
TW100132009A
Other languages
English (en)
Chinese (zh)
Other versions
TW201226491A (en
Inventor
李玉琢
朱家助
徐安 桑達 帆卡塔拉曼
邱威嵐
哈維 韋恩 平德
Original Assignee
巴斯夫歐洲公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 巴斯夫歐洲公司 filed Critical 巴斯夫歐洲公司
Publication of TW201226491A publication Critical patent/TW201226491A/zh
Application granted granted Critical
Publication of TWI525164B publication Critical patent/TWI525164B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/18—Other polishing compositions based on non-waxy substances on other substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW100132009A 2010-09-08 2011-09-06 用於包含氧化矽介電質及多矽膜之化學機械研磨基材之水性研磨組成物及方法 TWI525164B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US38071910P 2010-09-08 2010-09-08

Publications (2)

Publication Number Publication Date
TW201226491A TW201226491A (en) 2012-07-01
TWI525164B true TWI525164B (zh) 2016-03-11

Family

ID=44773986

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100132009A TWI525164B (zh) 2010-09-08 2011-09-06 用於包含氧化矽介電質及多矽膜之化學機械研磨基材之水性研磨組成物及方法

Country Status (11)

Country Link
US (1) US20130168348A1 (https=)
EP (1) EP2428541B1 (https=)
JP (1) JP5965906B2 (https=)
KR (1) KR101906135B1 (https=)
CN (1) CN103080256B (https=)
IL (1) IL224645A (https=)
MY (1) MY175638A (https=)
RU (1) RU2573672C2 (https=)
SG (2) SG10201606566SA (https=)
TW (1) TWI525164B (https=)
WO (1) WO2012032451A1 (https=)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9070632B2 (en) 2010-10-07 2015-06-30 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers
RU2588620C2 (ru) 2010-12-10 2016-07-10 Басф Се Водная полирующая композиция и способ химико-механического полирования подложек, содержащих пленки на основе оксидкремниевого диэлектрика и на основе поликремния
EP2753670B1 (en) 2011-09-07 2016-06-22 Basf Se A chemical mechanical polishing (cmp) composition comprising a glycoside
KR101931930B1 (ko) * 2011-12-21 2018-12-24 바스프 에스이 Cmp 조성물의 제조 방법 및 그의 적용
CN104178033A (zh) * 2013-05-27 2014-12-03 天津西美半导体材料有限公司 纳米二氧化铈抛光液组合物
US20150104940A1 (en) 2013-10-11 2015-04-16 Air Products And Chemicals Inc. Barrier chemical mechanical planarization composition and method thereof
KR102283723B1 (ko) * 2013-12-11 2021-07-30 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 표면 잔류물 제거용 세정 제형
US9303189B2 (en) * 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9551075B2 (en) * 2014-08-04 2017-01-24 Sinmat, Inc. Chemical mechanical polishing of alumina
JP6879995B2 (ja) * 2015-07-13 2021-06-02 シーエムシー マテリアルズ，インコーポレイティド 誘電体基板を加工するための方法及び組成物
KR101628878B1 (ko) * 2015-09-25 2016-06-16 영창케미칼 주식회사 Cmp용 슬러리 조성물 및 이를 이용한 연마방법
KR101693278B1 (ko) * 2015-09-25 2017-01-05 유비머트리얼즈주식회사 슬러리 및 이를 이용한 기판 연마 방법
KR101871569B1 (ko) * 2016-02-25 2018-08-02 삼성에스디아이 주식회사 이방 도전성 필름 및 이에 의해 접속된 디스플레이 장치
KR101827366B1 (ko) * 2016-05-16 2018-02-09 주식회사 케이씨텍 고단차 연마용 슬러리 조성물
US10253216B2 (en) 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
KR102677797B1 (ko) * 2016-12-22 2024-06-24 주식회사 케이씨텍 Sti 공정용 연마 슬러리 조성물
JP6761339B2 (ja) 2016-12-28 2020-09-23 花王株式会社 酸化セリウム砥粒
KR20210118469A (ko) * 2016-12-30 2021-09-30 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 폴리싱 조성물
US10294399B2 (en) * 2017-01-05 2019-05-21 Cabot Microelectronics Corporation Composition and method for polishing silicon carbide
WO2018179061A1 (ja) * 2017-03-27 2018-10-04 日立化成株式会社 研磨液、研磨液セット及び研磨方法
CN108587478B (zh) * 2018-07-03 2020-09-25 中国人民解放军国防科技大学 一种改性纳米二氧化硅复合抛光液及其应用
KR102296085B1 (ko) 2019-07-01 2021-09-01 남기호 스마트 트램폴린 및 스마트 트램폴린을 이용한 건강관리 시스템
JP7803851B2 (ja) * 2019-09-04 2026-01-21 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー ポリシリコンｃｍｐ用組成物および方法
TWI767355B (zh) * 2019-10-24 2022-06-11 美商慧盛材料美國責任有限公司 高氧化物移除速率的淺溝隔離化學機械平坦化組合物、系統及方法
JP7803675B2 (ja) * 2020-10-05 2026-01-21 花王株式会社 酸化珪素膜用研磨液組成物
JP7777017B2 (ja) * 2021-03-30 2025-11-27 株式会社フジミインコーポレーテッド 研磨用組成物、及び窒化ケイ素を選択的に除去する方法
CN113549399B (zh) * 2021-08-03 2022-02-15 万华化学集团电子材料有限公司 适用于硅片粗抛光的化学机械抛光组合物及其应用
KR102773634B1 (ko) * 2022-04-13 2025-02-25 에스케이엔펄스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자의 연마방법
CN115160933B (zh) * 2022-07-27 2023-11-28 河北工业大学 一种用于钴互连集成电路钴cmp的碱性抛光液及其制备方法
WO2024111032A1 (ja) * 2022-11-21 2024-05-30 株式会社レゾナック Ｃｍｐ用研磨液、ｃｍｐ用研磨液セット及び研磨方法
CN116000782B (zh) * 2022-12-27 2023-09-19 昂士特科技(深圳)有限公司 用于金属合金cmp的化学机械抛光组合物

Family Cites Families (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2610705C3 (de) 1976-03-13 1978-10-19 Henkel Kgaa, 4000 Duesseldorf Saure galvanische Kupferbäder
US5478882A (en) 1987-09-21 1995-12-26 The Geon Company Articles from reinforced plasticized polyvinyl halide resin
US5057560A (en) 1987-10-05 1991-10-15 Ciba-Geigy Corporation Thermotropic copolymer hydrogels from N,N-dimethylacrylamide and methoxy-ethyl (meth) acrylate
FR2694939B1 (fr) 1992-08-20 1994-12-23 Schlumberger Cie Dowell Polymères thermoviscosifiants, leur synthèse et leurs applications notamment dans l'industrie pétrolière.
US5738800A (en) 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
US6132637A (en) * 1996-09-27 2000-10-17 Rodel Holdings, Inc. Composition and method for polishing a composite of silica and silicon nitride
US6068787A (en) 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US6110396A (en) 1996-11-27 2000-08-29 International Business Machines Corporation Dual-valent rare earth additives to polishing slurries
US5759917A (en) 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
TW510917B (en) 1998-02-24 2002-11-21 Showa Denko Kk Abrasive composition for polishing semiconductor device and method for manufacturing semiconductor device using same
US7547669B2 (en) 1998-07-06 2009-06-16 Ekc Technology, Inc. Remover compositions for dual damascene system
US6299659B1 (en) 1998-08-05 2001-10-09 Showa Denko K.K. Polishing material composition and polishing method for polishing LSI devices
JP2000109816A (ja) * 1998-10-05 2000-04-18 Okamoto Machine Tool Works Ltd 研磨剤スラリ−の調製方法
US6740590B1 (en) 1999-03-18 2004-05-25 Kabushiki Kaisha Toshiba Aqueous dispersion, aqueous dispersion for chemical mechanical polishing used for manufacture of semiconductor devices, method for manufacture of semiconductor devices, and method for formation of embedded writing
US6110832A (en) * 1999-04-28 2000-08-29 International Business Machines Corporation Method and apparatus for slurry polishing
US7425581B2 (en) 1999-07-30 2008-09-16 Universiteit Utrecht Temperature sensitive polymers
US6468910B1 (en) 1999-12-08 2002-10-22 Ramanathan Srinivasan Slurry for chemical mechanical polishing silicon dioxide
US6491843B1 (en) 1999-12-08 2002-12-10 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
DE10006538C2 (de) 2000-02-15 2002-11-28 Forsch Pigmente Und Lacke E V Verfahren zur Beschichtung von Partikeln mit LCST-Polymeren
JP2001240850A (ja) 2000-02-29 2001-09-04 Sanyo Chem Ind Ltd 研磨用砥粒分散剤および研磨用スラリー
KR100378180B1 (ko) 2000-05-22 2003-03-29 삼성전자주식회사 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법
TWI281493B (en) 2000-10-06 2007-05-21 Mitsui Mining & Smelting Co Polishing material
US6682642B2 (en) 2000-10-13 2004-01-27 Shipley Company, L.L.C. Seed repair and electroplating bath
US7037352B2 (en) * 2000-12-12 2006-05-02 Showa Denko Kabushiki Kaisha Polishing particle and method for producing polishing particle
FR2824832B1 (fr) 2001-05-16 2005-05-27 Oreal Polymeres hydrosolubles a squelette hydrosoluble et a unites laterales a lcst, leur procede de preparation, compositions aqueuses les contenant, et leur utilisation dans le domaine cosmetique
DE10152993A1 (de) 2001-10-26 2003-05-08 Bayer Ag Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität
WO2003078947A2 (en) 2002-03-15 2003-09-25 The Penn State Research Foundation Method for control of temperature-sensitivity of polymers in solution
JP3516446B2 (ja) 2002-04-26 2004-04-05 東京応化工業株式会社 ホトレジスト剥離方法
US6616514B1 (en) * 2002-06-03 2003-09-09 Ferro Corporation High selectivity CMP slurry
JP4443864B2 (ja) 2002-07-12 2010-03-31 株式会社ルネサステクノロジ レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法
US6645265B1 (en) 2002-07-19 2003-11-11 Saint-Gobain Ceramics And Plastics, Inc. Polishing formulations for SiO2-based substrates
GB2393447B (en) * 2002-08-07 2006-04-19 Kao Corp Polishing composition
DE10243438A1 (de) 2002-09-18 2004-03-25 Merck Patent Gmbh Oberflächenmodifizierte Effektpigmente
DE10254430A1 (de) 2002-11-21 2004-06-03 Süd-Chemie AG LCST-Polymere
EP1422320A1 (en) 2002-11-21 2004-05-26 Shipley Company, L.L.C. Copper electroplating bath
DE10254432A1 (de) 2002-11-21 2004-06-03 Süd-Chemie AG LCST-Polymere
US7300601B2 (en) 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US6910951B2 (en) * 2003-02-24 2005-06-28 Dow Global Technologies, Inc. Materials and methods for chemical-mechanical planarization
WO2004094581A1 (en) 2003-04-18 2004-11-04 Ekc Technology, Inc. Aqueous fluoride compositions for cleaning semiconductor devices
JP4363890B2 (ja) * 2003-04-30 2009-11-11 共栄社化学株式会社 水系研磨加工液
KR100539983B1 (ko) 2003-05-15 2006-01-10 학교법인 한양학원 Ｃｍｐ용 세리아 연마제 및 그 제조 방법
AU2003297104A1 (en) 2003-07-09 2005-02-25 Dynea Chemicals Oy Non-polymeric organic particles for chemical mechanical planarization
TWI415926B (zh) * 2003-07-11 2013-11-21 Ｗ Ｒ 康格雷氏公司 化學機械研磨用磨粒
KR100574225B1 (ko) 2003-10-10 2006-04-26 요업기술원 실리카에 세리아/실리카가 코팅된 화학적 기계적 연마용연마재 및 그 제조방법
DE10358092A1 (de) 2003-12-10 2005-07-14 Merck Patent Gmbh Oberflächenmodifizierte Partikel
KR100640600B1 (ko) 2003-12-12 2006-11-01 삼성전자주식회사 슬러리 조성물 및 이를 이용한 화학기계적연마공정를포함하는 반도체 소자의 제조방법
JPWO2005110679A1 (ja) * 2004-05-19 2008-03-21 日産化学工業株式会社 研磨用組成物
JP4420391B2 (ja) 2004-05-28 2010-02-24 三井金属鉱業株式会社 セリウム系研摩材
US7026441B2 (en) 2004-08-12 2006-04-11 Intel Corporation Thermoresponsive sensor comprising a polymer solution
US20070218811A1 (en) 2004-09-27 2007-09-20 Hitachi Chemical Co., Ltd. Cmp polishing slurry and method of polishing substrate
US20080254717A1 (en) * 2004-09-28 2008-10-16 Hitachi Chemical Co., Ltd. Cmp Polishing Slurry and Method of Polishing Substrate
US7504044B2 (en) * 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
TWI400365B (zh) 2004-11-12 2013-07-01 安頌股份有限公司 微電子裝置上的銅電沈積
KR100674927B1 (ko) 2004-12-09 2007-01-26 삼성전자주식회사 Ｃｍｐ용 슬러리 조성물 및 그 제조 방법과 이들을 이용한기판 연마 방법
CN100375770C (zh) * 2005-01-17 2008-03-19 上海大学 核/壳型纳米粒子研磨剂抛光液组合物及其制备方法
JP4131270B2 (ja) 2005-03-01 2008-08-13 トヨタ自動車株式会社 車輌の制駆動力制御装置
US20060213780A1 (en) 2005-03-24 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating composition and method
US20060216935A1 (en) 2005-03-28 2006-09-28 Ferro Corporation Composition for oxide CMP in CMOS device fabrication
JP3929481B2 (ja) * 2005-04-04 2007-06-13 昭和電工株式会社 酸化セリウム系研磨材、その製造方法及び用途
FR2889194A1 (fr) 2005-07-27 2007-02-02 Rhodia Chimie Sa Copolymere a blocs comprenant un bloc lcst presentant une temperature inferieur critique de solubilite, formulations comprenant le copolymere et utilisation pour vectoriser un ingredient actif
KR20080033514A (ko) 2005-08-05 2008-04-16 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 금속막 평탄화를 위한 고 처리량의 화학적 기계적 연마조성물
KR101325856B1 (ko) 2005-09-30 2013-11-05 닛산 가가쿠 고교 가부시키 가이샤 감열 응답성 고분자를 이용한 구멍 패턴 첨부막을 가지는칩 및 그 제조 방법
US20070077865A1 (en) 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
JP4872919B2 (ja) 2005-11-11 2012-02-08 日立化成工業株式会社 酸化ケイ素用研磨剤、添加液および研磨方法
EP1994112B1 (en) 2006-01-25 2018-09-19 LG Chem, Ltd. Cmp slurry and method for polishing semiconductor wafer using the same
KR101245502B1 (ko) * 2006-01-31 2013-03-25 히타치가세이가부시끼가이샤 절연막 연마용 ｃｍｐ 연마제, 연마 방법, 상기 연마 방법으로 연마된 반도체 전자 부품
US20070264827A1 (en) * 2006-05-09 2007-11-15 Promos Technologies Pte. Ltd. Method for achieving uniform chemical mechanical polishing in integrated circuit manufacturing
KR100829594B1 (ko) 2006-10-10 2008-05-14 삼성전자주식회사 화학 기계적 연마용 슬러리 조성물 및 이를 이용한 반도체메모리 소자의 제조 방법
US9120952B2 (en) 2006-10-27 2015-09-01 University Of South Florida Polymeric microgels for chemical mechanical planarization (CMP) processing
JP2008186898A (ja) * 2007-01-29 2008-08-14 Nissan Chem Ind Ltd 研磨用組成物
JP4367494B2 (ja) * 2007-02-09 2009-11-18 住友電気工業株式会社 ＧａＡｓウエハの化学機械研磨方法
EP2437285A2 (en) * 2007-03-26 2012-04-04 JSR Corporation Chemical mechanical polishing method for semiconductor device using an aqueous dispersion
KR101202720B1 (ko) * 2008-02-29 2012-11-19 주식회사 엘지화학 화학적 기계적 연마용 수계 슬러리 조성물 및 화학적 기계적 연마 방법

Also Published As

Publication number Publication date
JP5965906B2 (ja) 2016-08-10
EP2428541A1 (en) 2012-03-14
KR101906135B1 (ko) 2018-10-10
WO2012032451A1 (en) 2012-03-15
IL224645A (en) 2017-11-30
MY175638A (en) 2020-07-03
JP2013540849A (ja) 2013-11-07
CN103080256A (zh) 2013-05-01
SG10201606566SA (en) 2016-09-29
US20130168348A1 (en) 2013-07-04
RU2013115237A (ru) 2014-10-20
SG11201606187RA (en) 2016-09-29
TW201226491A (en) 2012-07-01
RU2573672C2 (ru) 2016-01-27
CN103080256B (zh) 2015-06-24
EP2428541B1 (en) 2019-03-06
KR20130102587A (ko) 2013-09-17

Similar Documents

Publication Publication Date Title
TWI525164B (zh) 用於包含氧化矽介電質及多矽膜之化學機械研磨基材之水性研磨組成物及方法
TWI538970B (zh) 化學機械研磨含有氧化矽介電質薄膜及多晶矽及／或氮化矽薄膜之基材的方法
TWI538989B (zh) 水研磨組成物及用於化學機械研磨電子，機械及光學裝置基材的方法
TWI538971B (zh) 用於電子、機械及光學裝置之化學機械研磨基材之水性研磨組成物及方法
RU2608890C2 (ru) Водные полирующие композиции, содержащие n-замещенные диазений диоксиды и/или соли n -замещенных n'-гидрокси-диазений оксидов
TW201329215A (zh) 一種製造半導體裝置的方法，其包括在含陰離子性磷酸鹽或膦酸鹽之ｃｍｐ組合物存在下化學機械拋光硼磷矽酸鹽玻璃（ｂｐｓｇ）材料
WO2006009160A1 (ja) Ｃｍｐ研磨剤及び基板の研磨方法
TW202231805A (zh) 用於高拓樸選擇性的自停止性拋光組合物與方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees