WO2012028728A3 - Verfahren zum nasschemischen rückätzen eines emitters einer solarzelle - Google Patents

Verfahren zum nasschemischen rückätzen eines emitters einer solarzelle Download PDF

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Publication number
WO2012028728A3
WO2012028728A3 PCT/EP2011/065231 EP2011065231W WO2012028728A3 WO 2012028728 A3 WO2012028728 A3 WO 2012028728A3 EP 2011065231 W EP2011065231 W EP 2011065231W WO 2012028728 A3 WO2012028728 A3 WO 2012028728A3
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WO
WIPO (PCT)
Prior art keywords
wet
chemical etching
solar cell
etching back
cell emitter
Prior art date
Application number
PCT/EP2011/065231
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English (en)
French (fr)
Other versions
WO2012028728A2 (de
Inventor
Agata Lachowicz
Berthold Schum
Knut Vaas
Original Assignee
Schott Solar Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schott Solar Ag filed Critical Schott Solar Ag
Priority to CN201180053238.5A priority Critical patent/CN103403875B/zh
Priority to JP2013526493A priority patent/JP2013536992A/ja
Priority to KR1020137008454A priority patent/KR20140014065A/ko
Priority to US13/820,540 priority patent/US9583652B2/en
Priority to EP11760429.8A priority patent/EP2612365A2/de
Publication of WO2012028728A2 publication Critical patent/WO2012028728A2/de
Publication of WO2012028728A3 publication Critical patent/WO2012028728A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Die Erfindung bezieht sich auf ein Verfahren zum nasschemischen Ätzen einer hochdotierten Siliziumschicht in einer Ätzlösung. Um eine homogene Ätzung durchführen zu können, wird vorgeschlagen, dass als Ätzlösung eine HF-haltige Ätzlösung mit zumindest einem Oxidationsmittel aus der Gruppe Peroxodisulfate, Peroxomonosulfate, Wasserstoffperoxid verwendet wird.
PCT/EP2011/065231 2010-09-03 2011-09-02 Verfahren zum nasschemischen rückätzen eines emitters einer solarzelle WO2012028728A2 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN201180053238.5A CN103403875B (zh) 2010-09-03 2011-09-02 用于太阳能电池发射体的湿化学反向蚀刻的方法
JP2013526493A JP2013536992A (ja) 2010-09-03 2011-09-02 太陽電池エミッタの湿式化学エッチングバックのための方法
KR1020137008454A KR20140014065A (ko) 2010-09-03 2011-09-02 태양전지 에미터의 습식―화학 에칭 백을 위한 방법
US13/820,540 US9583652B2 (en) 2010-09-03 2011-09-02 Method for the wet-chemical etching back of a solar cell emitter
EP11760429.8A EP2612365A2 (de) 2010-09-03 2011-09-02 Verfahren zum nasschemischen rückätzen eines emitters einer solarzelle

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102010037311.7 2010-09-03
DE102010037311 2010-09-03
DE102011050136A DE102011050136A1 (de) 2010-09-03 2011-05-05 Verfahren zum nasschemischen Ätzen einer Siliziumschicht
DE102011050136.3 2011-05-05

Publications (2)

Publication Number Publication Date
WO2012028728A2 WO2012028728A2 (de) 2012-03-08
WO2012028728A3 true WO2012028728A3 (de) 2012-10-11

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/EP2011/065231 WO2012028728A2 (de) 2010-09-03 2011-09-02 Verfahren zum nasschemischen rückätzen eines emitters einer solarzelle
PCT/EP2011/065222 WO2012028723A2 (de) 2010-09-03 2011-09-02 Verfahren zum nasschemischen ätzen einer hochdotierten halbleiterschicht

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/EP2011/065222 WO2012028723A2 (de) 2010-09-03 2011-09-02 Verfahren zum nasschemischen ätzen einer hochdotierten halbleiterschicht

Country Status (7)

Country Link
US (2) US9583652B2 (de)
EP (2) EP2612365A2 (de)
JP (1) JP2013536992A (de)
KR (1) KR20140014065A (de)
CN (2) CN103403875B (de)
DE (2) DE102011050136A1 (de)
WO (2) WO2012028728A2 (de)

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DE102011050903A1 (de) 2012-03-08
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EP2612362A2 (de) 2013-07-10
CN103403875B (zh) 2017-07-25
KR20140014065A (ko) 2014-02-05
DE102011050903A8 (de) 2012-05-16
CN103403875A (zh) 2013-11-20
US9583652B2 (en) 2017-02-28
CN103314448A (zh) 2013-09-18
DE102011050136A1 (de) 2012-03-08
WO2012028723A3 (de) 2012-10-18
EP2612365A2 (de) 2013-07-10
JP2013536992A (ja) 2013-09-26
WO2012028728A2 (de) 2012-03-08

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