WO2012002694A4 - 유기 태양 전지 및 이의 제조 방법 - Google Patents
유기 태양 전지 및 이의 제조 방법 Download PDFInfo
- Publication number
- WO2012002694A4 WO2012002694A4 PCT/KR2011/004689 KR2011004689W WO2012002694A4 WO 2012002694 A4 WO2012002694 A4 WO 2012002694A4 KR 2011004689 W KR2011004689 W KR 2011004689W WO 2012002694 A4 WO2012002694 A4 WO 2012002694A4
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metal oxide
- metal
- anode
- organic solar
- solar cell
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 15
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 104
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 104
- 239000002245 particle Substances 0.000 claims abstract description 71
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 238000009826 distribution Methods 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims description 38
- 239000002184 metal Substances 0.000 claims description 38
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 22
- 239000011259 mixed solution Substances 0.000 claims description 22
- 239000000654 additive Substances 0.000 claims description 19
- 230000000996 additive effect Effects 0.000 claims description 19
- 239000003960 organic solvent Substances 0.000 claims description 18
- 239000002121 nanofiber Substances 0.000 claims description 17
- 239000002904 solvent Substances 0.000 claims description 17
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 15
- 239000002244 precipitate Substances 0.000 claims description 15
- 239000002994 raw material Substances 0.000 claims description 13
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 12
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- -1 alcohol amines Chemical class 0.000 claims description 12
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 6
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- CPRMKOQKXYSDML-UHFFFAOYSA-M rubidium hydroxide Chemical compound [OH-].[Rb+] CPRMKOQKXYSDML-UHFFFAOYSA-M 0.000 claims description 6
- 229910052712 strontium Inorganic materials 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- 239000000908 ammonium hydroxide Substances 0.000 claims description 4
- RELMFMZEBKVZJC-UHFFFAOYSA-N 1,2,3-trichlorobenzene Chemical compound ClC1=CC=CC(Cl)=C1Cl RELMFMZEBKVZJC-UHFFFAOYSA-N 0.000 claims description 3
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 claims description 3
- MFGOFGRYDNHJTA-UHFFFAOYSA-N 2-amino-1-(2-fluorophenyl)ethanol Chemical compound NCC(O)C1=CC=CC=C1F MFGOFGRYDNHJTA-UHFFFAOYSA-N 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims description 3
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Inorganic materials [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 claims description 3
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 claims description 3
- 239000000920 calcium hydroxide Substances 0.000 claims description 3
- 229910001861 calcium hydroxide Inorganic materials 0.000 claims description 3
- 229940117389 dichlorobenzene Drugs 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 claims description 3
- 239000000347 magnesium hydroxide Substances 0.000 claims description 3
- 229910001862 magnesium hydroxide Inorganic materials 0.000 claims description 3
- 229910001509 metal bromide Inorganic materials 0.000 claims description 3
- 229910001510 metal chloride Inorganic materials 0.000 claims description 3
- 229910001463 metal phosphate Inorganic materials 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 150000003467 sulfuric acid derivatives Chemical class 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 claims description 2
- 229910052976 metal sulfide Inorganic materials 0.000 claims description 2
- 239000002120 nanofilm Substances 0.000 claims description 2
- 238000003786 synthesis reaction Methods 0.000 claims description 2
- 150000002736 metal compounds Chemical class 0.000 claims 1
- 150000002894 organic compounds Chemical class 0.000 claims 1
- 238000013086 organic photovoltaic Methods 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 13
- 239000001301 oxygen Substances 0.000 abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 abstract description 13
- 229920000642 polymer Polymers 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 230000005525 hole transport Effects 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 11
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000002270 dispersing agent Substances 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 8
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 8
- 238000007789 sealing Methods 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229920000547 conjugated polymer Polymers 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 6
- 229910003472 fullerene Inorganic materials 0.000 description 6
- 230000000149 penetrating effect Effects 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000003756 stirring Methods 0.000 description 5
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 4
- UEXCJVNBTNXOEH-UHFFFAOYSA-N Ethynylbenzene Chemical group C#CC1=CC=CC=C1 UEXCJVNBTNXOEH-UHFFFAOYSA-N 0.000 description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 4
- 229910021389 graphene Inorganic materials 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000010345 tape casting Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 150000004702 methyl esters Chemical class 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 3
- 230000027756 respiratory electron transport chain Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 229930040373 Paraformaldehyde Natural products 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 238000001962 electrophoresis Methods 0.000 description 2
- 125000002534 ethynyl group Chemical class [H]C#C* 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- XMYQHJDBLRZMLW-UHFFFAOYSA-N methanolamine Chemical compound NCO XMYQHJDBLRZMLW-UHFFFAOYSA-N 0.000 description 2
- 229940087646 methanolamine Drugs 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920006324 polyoxymethylene Polymers 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RGSINQHSYQBZBN-UHFFFAOYSA-N 1-(2-phenylethynyl)-2-(trifluoromethyl)benzene Chemical group FC(F)(F)C1=CC=CC=C1C#CC1=CC=CC=C1 RGSINQHSYQBZBN-UHFFFAOYSA-N 0.000 description 1
- IOPDYTCCKSYLJG-UHFFFAOYSA-N 3,3,3-trifluoroprop-1-ynylbenzene Chemical group FC(F)(F)C#CC1=CC=CC=C1 IOPDYTCCKSYLJG-UHFFFAOYSA-N 0.000 description 1
- WQYWXQCOYRZFAV-UHFFFAOYSA-N 3-octylthiophene Chemical compound CCCCCCCCC=1C=CSC=1 WQYWXQCOYRZFAV-UHFFFAOYSA-N 0.000 description 1
- CKJRIVCXNKBSQQ-UHFFFAOYSA-N 9h-carbazole;2-phenylethynylbenzene Chemical group C1=CC=C2C3=CC=CC=C3NC2=C1.C1=CC=CC=C1C#CC1=CC=CC=C1 CKJRIVCXNKBSQQ-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- FIPWRIJSWJWJAI-UHFFFAOYSA-N Butyl carbitol 6-propylpiperonyl ether Chemical compound C1=C(CCC)C(COCCOCCOCCCC)=CC2=C1OCO2 FIPWRIJSWJWJAI-UHFFFAOYSA-N 0.000 description 1
- AZSFNTBGCTUQFX-UHFFFAOYSA-N C12=C3C(C4=C5C=6C7=C8C9=C(C%10=6)C6=C%11C=%12C%13=C%14C%11=C9C9=C8C8=C%11C%15=C%16C=%17C(C=%18C%19=C4C7=C8C%15=%18)=C4C7=C8C%15=C%18C%20=C(C=%178)C%16=C8C%11=C9C%14=C8C%20=C%13C%18=C8C9=%12)=C%19C4=C2C7=C2C%15=C8C=4C2=C1C12C3=C5C%10=C3C6=C9C=4C32C1(CCCC(=O)OC)C1=CC=CC=C1 Chemical compound C12=C3C(C4=C5C=6C7=C8C9=C(C%10=6)C6=C%11C=%12C%13=C%14C%11=C9C9=C8C8=C%11C%15=C%16C=%17C(C=%18C%19=C4C7=C8C%15=%18)=C4C7=C8C%15=C%18C%20=C(C=%178)C%16=C8C%11=C9C%14=C8C%20=C%13C%18=C8C9=%12)=C%19C4=C2C7=C2C%15=C8C=4C2=C1C12C3=C5C%10=C3C6=C9C=4C32C1(CCCC(=O)OC)C1=CC=CC=C1 AZSFNTBGCTUQFX-UHFFFAOYSA-N 0.000 description 1
- PJRZTLOAUXSLQF-UHFFFAOYSA-N C[Si](C)(C)C1=C(C(=C(C=C1)C#CC1=CC=CC=C1)C(C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1)C(C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1 Chemical group C[Si](C)(C)C1=C(C(=C(C=C1)C#CC1=CC=CC=C1)C(C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1)C(C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1 PJRZTLOAUXSLQF-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229920000291 Poly(9,9-dioctylfluorene) Polymers 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 229920000109 alkoxy-substituted poly(p-phenylene vinylene) Polymers 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- WBCLXFIDEDJGCC-UHFFFAOYSA-N hexafluoro-2-butyne Chemical group FC(F)(F)C#CC(F)(F)F WBCLXFIDEDJGCC-UHFFFAOYSA-N 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229960005235 piperonyl butoxide Drugs 0.000 description 1
- 229920000264 poly(3',7'-dimethyloctyloxy phenylene vinylene) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000015 polydiacetylene Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000003381 solubilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- UZIXCCMXZQWTPB-UHFFFAOYSA-N trimethyl(2-phenylethynyl)silane Chemical group C[Si](C)(C)C#CC1=CC=CC=C1 UZIXCCMXZQWTPB-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/152—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to an organic solar cell and a method of manufacturing the same, and more particularly, to an organic solar cell including a metal oxide nano thin film layer formed between an anode and a photoactive layer and a method of manufacturing the same.
- Organic solar cells are composed of a conjugated polymer such as polyparaphenylene vinylene (PPV) with alternating double bonds, a photosensitive low molecule such as CuPc, perylene, pentacene, a (6,6) And 61 - butyric acid methyl ester (PCBM).
- PV polyparaphenylene vinylene
- PCBM 61 - butyric acid methyl ester
- the organic solar cell basically has a thin film structure and mainly uses a transparent electrode such as indium tin oxide (ITO) as a cathode and a metal electrode such as aluminum (Al) as a cathode having a low work function as a cathode. And has a bulk heterojunction structure in which a hole acceptor and an electron acceptor are mixed with each other.
- ITO indium tin oxide
- Al aluminum
- a conjugated polymer having conductivity such as PPV is used, and fullerene is used as the electron acceptor.
- fullerene should be sufficiently mixed in the conjugated polymer. Therefore, a fullerene derivative such as the PCBM can be used in order to mix the fullerene with the conjugated polymer have.
- the conjugated polymer When the conjugated polymer absorbs light, it generates an electron-hole pair (exciton), and the generated electrons and holes are collected in the anode and the cathode via the fullerene and the conjugated polymer, respectively.
- the organic solar cell can be mass-produced with ease in processability and low cost, and it is possible to produce a thin film by a roll-to-roll method, thereby making it possible to manufacture a large-area electronic device having flexibility.
- An organic solar battery includes a cathode and an anode disposed opposite to each other, a photoactive layer located between the anode and the cathode, the photoactive layer mixed with a hole receptor and an electron acceptor, And a metal oxide nano thin film layer containing a metal oxide having an average particle diameter of 10 nm or less.
- the metal oxide has a particle diameter distribution of 90 nm (number) or more with respect to the total number of the metal oxide particles is ⁇ 4 nm based on the average particle diameter.
- the metal oxide may have an average particle diameter of 1 to 8 nm.
- the metal oxide may have a particle size distribution of 90 (number)% or more with respect to the total number of the metal oxide particles is ⁇ 2 nm based on the average particle size.
- the metal oxide may be selected from the group consisting of Ti, Zn, Sr, In, Ba, K, Nb, Fe, Ta, W, Sa, Bi, Ni, Cu, Mo, Ce, Pt, May be an oxide of any one of the metals.
- the metal oxide nanofiber layer may have a thickness of 50 to 500 nm.
- a method of manufacturing an organic solar battery comprising the steps of: forming a cathode and an anode that are disposed to face each other; forming a photoactive layer located between the anode and the cathode, And forming a metal oxide nanofiber layer between the anode and the photoactive layer.
- the step of forming the metal oxide nanofiber layer comprises the steps of preparing a mixed solution by adding a metal raw material and a basic additive to a solvent and reacting the mixed solution at 20 to 60 ° C at a low temperature to produce a precipitate of a metal oxide , Dispersing the produced metal oxide precipitate in an organic solvent, and coating the metal oxide dispersed in the organic solvent.
- the metal raw material may be selected from the group consisting of metal chloride, metal acetate, metal citrate, metal acrylate, metal bromide, cyanide, Metal sulfates, metal phosphates, metal sulfates, and combinations thereof.
- the metal may be selected from the group consisting of Ti, Zn, Sr, In, Ba, K, Nb, Fe, Ta, W, Sa, Bi, Ni, Cu, Mo, Ce, Pt, Ag, Rh, And the like.
- the basic additive may be any one selected from the group consisting of alcohol amines, aqueous hydrogen peroxide, ammonium hydroxide, sodium hydroxide, potassium hydroxide, rubidium hydroxide, cesium hydroxide, magnesium hydroxide, calcium hydroxide and combinations thereof.
- the organic solvent is selected from the group consisting of chloroform, chlorobenzene, dichlorobenzene, trichlorobenzene, tetrahydrofuran (THF), dimethylformamide (DMF), dimethylacetamide (DMAC), dimethylsulfoxide (DMSO) And a combination thereof.
- the low-temperature synthesis may be performed for 2 to 10 hours.
- the method may further include a step of coating the metal oxide dispersed in the organic solvent, followed by baking at 150 to 250 ° C for 2 to 10 minutes.
- the metal raw material and the basic additive may be added in a weight ratio of 5: 1 to 1: 3.
- the metal oxide may have an average particle diameter of 10 nm or less, and the metal oxide may have a particle diameter distribution of 90% or more with respect to the total number of the metal oxide particles, based on the average particle diameter.
- FIG. 1 is a perspective view illustrating an organic solar cell according to an embodiment of the present invention.
- an organic solar battery 100 includes a cathode 160 and an anode 120 disposed opposite to each other, a cathode 160 disposed between the cathode 160 and the anode 120, Layer 140 and a metal oxide nano-film layer 170 formed between the anode 120 and the photoactive layer 140.
- the cathode 160 and the anode 120 are positioned on the substrate 110.
- the substrate 110 is not particularly limited as long as it has transparency and may be a transparent inorganic substrate such as quartz or glass, or a transparent substrate such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polystyrene (PP), polyimide (PI), polyethylene sulfonate (PES), polyoxymethylene (POM), polyetheretherketone (PEEK), polyethersulfone (PES) and polyetherimide May be used as the transparent plastic substrate.
- the transparent plastic substrate is preferably flexible and has high chemical stability, mechanical strength and transparency.
- the substrate 110 preferably has a transmittance of at least 70% or more, preferably 80% or more at a visible light wavelength of about 400 to 750 nm.
- the anode 120 is a path for allowing the light passing through the substrate 110 to reach the photoactive layer 140, it is preferable to use a material having a high transparency.
- the anode 120 preferably has a high work function, It is preferable to use a conductive material having a low resistance.
- anode forming material for forming the anode 120 include tin-doped indium oxide (ITO), fluorine-doped tin oxide (FTO), ZnO-Ga 2 O 3 , ZnO-Al 2 O 3, SnO 2 -Sb 2 O 3 , and those of the transparent oxide is selected from the group consisting of the combination, or a conductive polymer, graphene (graphene) thin film, the graphene oxide (graphene oxide) thin film, a carbon nanotube Organic-transparent electrodes such as thin films, and organic-inorganic transparent electrodes such as metal-bonded carbon nanotube thin films.
- ITO indium oxide
- FTO fluorine-doped tin oxide
- ZnO-Ga 2 O 3 ZnO-Al 2 O 3, SnO 2 -Sb 2 O 3
- those of the transparent oxide is selected from the group consisting of the combination, or a conductive polymer, graphene (graphene) thin film, the
- the cathode 160 is preferably made of a material having a low work function and the cathode forming material is specifically a metal such as magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, aluminum, silver, tin, lead, Copper, tungsten, and silicon.
- the photoactive layer 140 has a bulk heterojunction structure in which a hole receptor and an electron acceptor are mixed.
- the hole-transporting material may be an organic semiconductor such as an electrically conductive polymer or an organic low-molecular semiconductor material.
- the electrically conductive polymer may be a polythiophene, polyphenylenevinylene, polyfulorene, polypyrrole, , Copolymers thereof, and combinations thereof.
- the organic low-molecular semiconductor material may be at least one selected from the group consisting of pentacene, anthracene, tetracene, perylene, Oligothiophenes, oligothiophenes, derivatives thereof, and combinations thereof.
- the hole acceptor is preferably selected from the group consisting of poly-3-hexylthiophene (P3HT), poly-3-octylthiophene (P3OT), polyparaphenylenevinylene p-phenylenevinylene, PPV, poly (9,9'-dioctylfluorene), poly (2-methoxy, 5- (2-ethylhexyloxy) Poly (2-methyl-5- (3 ', 7'-dimethyloctyl) -1,4-phenylenevinylene, MEH-PPV] Oxy-1,4-phenylene vinylene, MDMOPPV], and a combination thereof.
- the electron acceptor may be any nanoparticle selected from the group consisting of fullerene (C 60 ) or a combination of fullerene derivatives, CdS, CdSe, CdTe and ZnSe.
- the electron acceptor is preferably (6,6) -phenyl -C 61 - butyric rigs Acid methyl ester [(6,6) -phenyl-C 61 -butyric acid methyl ester; PCBM], (6,6) - phenyl -C 71 - butyric rigs Acid methyl ester [(6,6) -phenyl-C 71 -butyric acid methyl ester; C 70 -PCBM], (6,6) - thienyl -C 61 - butyric rigs Acid methyl ester [(6,6) -thienyl-C 61 -butyric acid methyl ester; ThCBM], carbon nanotubes, and combinations thereof.
- the photoactive layer 140 is preferably made of a mixture of P3HT as the hole acceptor and PCBM as the electron acceptor.
- the mixed weight ratio of P3HT and PCBM may be 1: 0.1 to 1: 2.
- the organic solar battery 100 may further include a hole transfer layer 130 between the anode 120 and the photoactive layer 140.
- the hole transporting layer 130 may include at least one selected from the group consisting of poly (3,4-ethylenedioxythiophene) (PEDOT), poly (styrenesulfonate) (PSS), polyaniline, phthalocyanine, pentacene, polydiphenylacetylene, ) Poly (trimethylsilyl) di (triphenylmethyl) diphenyl acetylene, poly (trifluoromethyl) diphenylacetylene, copper phthalocyanine (Cu-PC) poly (bistrifluoromethyl) acetylene, (Meth) acrylates, such as phenylacetylene, poly (acetylenes), phenylacetylene, poly (carbazole) diphenylacetylene, polydiacetylene, polyphenylacetylene, polypyridine acetylene, polymethoxy
- the organic solar battery 100 may further include an electron transfer layer 150 between the cathode 160 and the photoactive layer 140.
- the electron transport layer 150 may include any one of electron transport materials selected from the group consisting of lithium fluoride, calcium, lithium, and titanium oxide.
- the organic solar cell 100 includes a metal oxide nano thin film layer 170 between the anode 120 and the photoactive layer 140.
- the metal oxide nano thin film layer 170 increases the movement speed of the holes to improve the efficiency of the organic solar cell 100 and blocks oxygen and moisture penetrating from the outside to prevent the polymer contained in the photoactive layer 140 from being dissolved in oxygen It is possible to prevent the organic solar cell 100 from deteriorating due to moisture and to improve the lifetime of the organic solar cell 100.
- the metal oxide nanofiber layer 170 may have a thickness of 50 to 500 nm, preferably 50 to 300 nm, more preferably 100 to 250 nm. When the thickness of the metal oxide nano thin film layer 170 is within the above range, it is possible to effectively prevent the oxygen and moisture from penetrating from the outside and affecting the photoactive layer and the hole transporting layer while improving the moving speed of holes.
- the metal oxide of the metal oxide nanofiber layer 170 may have an average particle diameter of 10 nm or less, preferably 1 to 8 nm, and more preferably 3 to 7 nm. It is preferable that the metal oxide has a particle diameter distribution of at least 90 (number)%, preferably at least 95 (number)%, more preferably at least 99 (number) It is ⁇ 4 nm as a standard, preferably ⁇ 3 nm, and more preferably ⁇ 2 nm.
- the particle diameter and the number of the metal oxide particles contained in the metal oxide nanofiber layer 170 are measured by transmission electron microscope (TEM) photographs of various portions of the metal oxide nanofiber layer 170 by measuring the particle diameters of the metal oxide particles , And counting the number can be performed.
- the metal oxide nano thin film layer 170 is formed by dispersing the metal oxide in an organic solvent and applying the dispersion to form a nano thin film layer.
- the average particle diameter of the metal oxide is 10 nm or less, and the number of the metal oxide particles is 90 )% Or more is ⁇ 4 nm based on the average particle diameter, it is possible to prevent the deterioration of the performance of the organic solar battery 100 due to the addition of the organic dispersant to the organic solvent without addition of the organic dispersant,
- the metal oxide can further increase the moving speed of the hole within the range of the average particle diameter and the particle size distribution and can more effectively block oxygen and moisture penetrating from the outside.
- the metal oxide may be selected from the group consisting of Ti, Zn, Sr, In, Ba, K, Nb, Fe, Ta, W, Sa, Bi, Ni, Cu, Mo, Ce, Pt, Or an oxide of any one of the metals, preferably ZnO.
- the ZnO has a broad bandgap and a semiconducting property, so that it can further improve the movement of holes when used together with the anode 120.
- FIG. 2 is a process diagram illustrating a method of manufacturing an organic solar cell according to another embodiment of the present invention.
- a method of manufacturing the organic solar battery 100 will be described with reference to FIG.
- the anode 120 may be formed on one surface of the substrate 110 to have a certain pattern through thermal vapor deposition, electron beam deposition, RF or magnetron sputtering, chemical vapor deposition or the like S10).
- the surface of the substrate 110 may be treated with UV / O 3 after forming the anode 120.
- the metal oxide nano thin film layer 170 is formed on the anode 120 (S20).
- the metal oxide nano thin film layer 170 is formed by adding a metal raw material and a basic additive to a solvent to prepare a mixed solution (S21).
- the resulting mixed solution is reacted at a low temperature at 20 to 60 ° C to produce a precipitate of a metal oxide (S22), dispersing the precipitate of the metal oxide in the organic solvent (S23), and coating the metal oxide dispersed in the organic solvent (S24).
- the method (S20) of forming the metal oxide nanofiber layer 170 may control the average particle diameter, the particle diameter distribution and the settling amount of the metal oxide by controlling the content of the metal raw material and the basic additive,
- the produced metal oxide particles have crystallinity.
- the mixed solution may be prepared by adding the metal raw material and the basic additive to the solvent and mixing them. At this time, reflux may be selectively performed when mixing and reacting.
- the solvent may be any solvent capable of solubilizing the metal raw material and the basic additive at the same time, preferably an alcohol solvent.
- the alcoholic solvent ethanol, methanol or isopropanol can be used.
- the metal raw material is selected from the group consisting of metal chloride, metal acetate, metal citrate, metal (meth) acrylate, metal bromide, metal cyanide, metal phosphate, metal sulfate, metal sulfide,
- the metal may be selected from the group consisting of Ti, Zn, Sr, In, Ba, K, Nb, Fe, Ta, W, Sa, Bi, Ni, Cu, Mo, Ce, Pt, Ag, Rh, And the like.
- the selection of the metal source material and the metal may be appropriately selected depending on what material the metal oxide nanofiber layer is to be formed in the organic solar cell 100, and Zn chloride or Zn acetate may be preferably used.
- the basic additive may be any one selected from the group consisting of alcohol amines, hydrogen peroxide water, ammonium hydroxide, sodium hydroxide, potassium hydroxide, rubidium hydroxide, cesium hydroxide, magnesium hydroxide, calcium hydroxide and combinations thereof. Ethanolamine, methanolamine, propanolamine and the like can be used.
- the basic additive may be selected from the group consisting of ammonium hydroxide, sodium hydroxide, potassium hydroxide, ethanolamine, methanolamine, and mixtures thereof. And it is possible to suppress the aggregation phenomenon between the nanoparticles.
- the metal raw material and the basic additive may be added in a weight ratio of 5: 1 to 1: 3, preferably 5: 1 to 1: 2, More preferably in a weight ratio of 3: 1 to 1: 1.
- the average particle diameter is 10 nm or less and the particle diameter distribution of 90 (number)% or more with respect to the total number of the metal oxide particles is +/- 4 nm
- the metal oxide having the above characteristics can be dispersed well in the organic solvent even without the organic dispersant, thereby preventing deterioration of performance of the organic solar battery 100 due to addition of the organic dispersant.
- a precipitate of the metal oxide can be prepared by reacting the prepared mixed solution at a low temperature (S22). Most of the metal oxides thus produced have crystallinity, so that the efficiency and characteristics of the organic solar cell 100, which may occur when the metal oxide does not have crystallinity, can be prevented.
- the low-temperature reaction is carried out at 20 to 60 ° C for 2 to 10 hours, preferably at 40 to 60 ° C for 2 to 10 hours, more preferably at 40 to 60 ° C for 4 to 6 hours .
- the average particle diameter is 10 nm or less with most crystallinity, and the particle diameter distribution of 90 (number)% or more with respect to the total number of the metal oxide particles is within ⁇ 4 nm Can be produced.
- the metal oxide nano thin film layer 170 can be manufactured by dispersing (S23) the precipitate of the metal oxide thus produced in an organic solvent and coating the metal oxide dispersed in the organic solvent on the anode 120 (S24) .
- the organic solvent for dissolving the precipitate of the metal oxide is selected from the group consisting of chloroform, chlorobenzene, dichlorobenzene, trichlorobenzene, tetrahydrofuran (DMF), dimethylacetamide (DMAC), dimethylsulfoxide (DMSO) , Toluene, an alcohol-based solvent, and combinations thereof.
- any conventional coating method can be used. Specifically, a coating method such as spraying, spin coating, dipping, printing, doctor blading or sputtering may be used Can be coated.
- the metal oxide nanofiber layer 170 may have a thickness of 50 to 500 nm, preferably 50 to 300 nm, more preferably 100 to 250 nm. When the thickness of the metal oxide nano thin film layer 170 is within the above range, permeation of oxygen and moisture from the outside can be effectively prevented while improving the movement speed of holes.
- the metal oxide nano thin film layer 170 may be selectively baked after the metal oxide dispersed in the organic solvent is coated on the anode 120.
- the baking may be performed at 150 to 250 ° C for 2 to 10 minutes, And the metal oxide synthesized by the low-temperature reaction has crystallinity, so that no additional calcination is required to impart crystallinity.
- the hole transport layer 130 may be formed on the anode 120 (S30).
- the hole transport layer 130 may be formed by coating the hole transport material by a method such as spraying, spin coating, dipping, printing, doctor blading, or sputtering, or by electrophoresis.
- the thickness of the hole transport layer 130 may preferably be 5 to 2000 nm.
- the photoactive layer 140 is formed on the anode 120 or the hole transport layer 130 (S40).
- the photoactive layer 140 may be formed by dissolving the electron acceptor and the hole acceptor in a solvent and coating the mixture by a method such as spraying, spin coating, dipping, printing, doctor blading or sputtering, can do.
- the thickness of the photoactive layer 140 may preferably be 5 to 2000 nm.
- the photoactive layer 140 can be manufactured by a drying process and a heat treatment process at 25 to 150 ° C for 5 to 145 minutes.
- appropriate phase separation can be induced between the electron acceptor and the hole acceptor, and the orientation of the electron acceptor can be induced.
- the temperature is less than 25 ° C, the mobility of the electron acceptor and the hole acceptor may be low and the heat treatment effect may be insignificant.
- the annealing temperature exceeds 150 ° C, Can be degraded.
- the heat treatment time is less than 5 minutes, the mobility of the electron acceptor and the hole acceptor may be low and the heat treatment effect may be insufficient.
- the heat treatment time exceeds 145 minutes, the performance deteriorates due to deterioration of the electron acceptor .
- the electron transport layer 150 may be formed on the photoactive layer 140 (S50).
- the electron transfer layer 150 may be formed by coating the electron transfer material by a method such as spraying, spin coating, dipping, printing, doctor blading or sputtering, or by electrophoresis.
- the thickness of the electron transporting layer 150 may preferably be 5 to 2000 nm.
- the cathode 160 is formed on the photoactive layer 140 or the electron transport layer 150 by thermal vapor deposition, electron beam deposition, RF or magnetron sputtering, chemical vapor deposition or the like (S60).
- Light from an external light source is incident on the photoactive layer 140 from the anode 120. Since the substrate 110, the anode 120, and the hole transport layer 130 are all transparent, light may pass through the substrate 110 and enter the photoactive layer 140.
- the photons of the incident light collide with the electrons of the valence band existing in the electron acceptor of the photoactive layer 140.
- the electrons in the valence band take energy corresponding to the photon's wavelength from the collided photon and jump to the conduction band. As the electrons of the valence band jump into the conduction band, holes are left in the valence band.
- the organic solar cell 100 has an electromotive force by electrons and holes moved to the respective electrodes and operates as a power source.
- the metal oxide nano thin film layer 170 increases the rate of hole transport to improve the efficiency of the organic solar cell 100, and blocks oxygen and moisture penetrating from the outside, Can be prevented from deteriorating due to oxygen and moisture and the life of the organic solar battery 100 can be improved.
- the organic solar cell according to an embodiment of the present invention improves the efficiency of the organic solar cell by increasing the hole transport speed and blocks the oxygen and moisture penetrating from the outside and the polymer contained in the photoactive layer is decomposed by oxygen and moisture It is possible to prevent deterioration of the photoactivating ability and to improve the lifetime of the organic solar battery.
- FIG. 1 is a perspective view showing an organic solar cell according to an embodiment of the present invention.
- FIG. 2 is a process diagram illustrating a method of manufacturing an organic solar cell according to another embodiment of the present invention.
- 3A and 3B are high-magnification-transmission electron microscope (HR-TEM) photographs of the metal oxide prepared in Example 1 of the present invention.
- Example 4 is a graph of a short-circuit current-open-circuit voltage of the organic solar cell manufactured in Example 1 of the present invention.
- the ITO substrate having the transparent electrode pattern was washed with an ultrasonic washing machine, dried using a hot air drier, and then subjected to a surface treatment using a UV / O 3 cleaner.
- PEDOT PSS [poly (3,4-ethylenedioxythiophene) / poly (styrenesulfonate)] was spin-coated on the metal oxide nano thin film layer at a rate of 4000 rpm for 30 seconds.
- the coated device was dried for about 25 minutes on a 120 ° C hot plate in a nitrogen atmosphere to form a hole transport layer.
- the P3HT: PCBM blend solution was spin-coated at 800 rpm for 30 seconds on the substrate having the hole transport layer formed thereon.
- the P3HT: PCBM blend solution was prepared by dissolving P3HT and PCBM in a chlorobenzene solvent at a concentration of 25 g / L and 20 g / L, respectively, based on the total weight of the blend solution to prepare gold (Au) nanoparticles having a surface diameter of 5 nm
- the photoactive layer thus prepared was dissolved in an amount of 0.005% by weight based on the total weight of the photoactive layer, and the mixture was stirred at room temperature for 30 minutes or more using a stirring magnet and a Vortexer.
- the solvent remaining in the thin film was removed and a heat treatment was performed for about 1 hour or more for 20 minutes at room temperature in a nitrogen atmosphere in order to make the crystal structure of the active layer polymer. After the heat treatment was completed, LiF and Al were vapor deposited through vacuum thermal deposition to form an organic solar cell.
- Example 1 3 g of Zn acetate and 1.5 g of potassium hydroxide basic additive were added to 250 ml of an alcohol solvent, followed by sealing and sealing, followed by stirring to prepare a mixed solution. The mixed solution was cooled at 40 ° C for 6 hours To prepare a precipitate of ZnO, an organic solar cell was fabricated in the same manner as in Example 1.
- Example 1 3 g of Zn acetate and 1.5 g of potassium hydroxide basic additive were added to 250 ml of an alcohol solvent, followed by sealing and sealing, followed by stirring to prepare a mixed solution. The mixed solution was then cooled at 60 ° C for 6 hours To prepare a precipitate of ZnO, an organic solar cell was fabricated in the same manner as in Example 1.
- Example 1 was a low temperature reaction using titanium butoxide (Ti Butoxide) in place of Zn acetate was produced in an organic solar cell, and is conducted in the same manner as in Example 1 except for preparing a TiO 2.
- Ti Butoxide titanium butoxide
- An organic solar cell was fabricated in the same manner as in Example 1, except that SiO 2 was prepared by the low temperature reaction using tetraethylorthosilicate instead of Zn acetate in Example 1.
- An organic solar cell was fabricated in the same manner as in Example 1, except that Fe 2 O 3 was prepared by a low temperature reaction using iron chloride (Fe chloride) instead of Zn acetate in Example 1.
- Example 1 3 g of Zn acetate and 3 g of ammonium basic additive were added to 250 ml of an alcohol solvent, followed by sealing and sealing, followed by stirring to prepare a mixed solution. The resulting mixed solution was subjected to a low temperature reaction To prepare a precipitate of ZnO, an organic solar cell was fabricated in the same manner as in Example 1.
- FIGS. 3A and 3B The results are shown in FIGS. 3A and 3B.
- FIG. 3A is a photograph at a magnification of 20 nm
- FIG. 3B is a photograph at a magnification of 5 nm.
- the portions A and B shown in Fig. 3B also show the crystal structure of ZnO.
- ZnO prepared in Example 1 of the present invention is well dispersed in an organic solvent without an organic dispersant, and most of the ZnO is found to have a crystal structure.
- the average particle diameter of each of the metal oxides prepared in Examples 1 to 3 and Comparative Examples 1 and 2 and the particle diameter distribution of not less than 95 (number)% with respect to the total number of the metal oxide particles were measured. Respectively.
- the particle diameters of the metal oxide particles were measured in a plurality of TEM photographs of various portions of the metal oxide nanofiber layer, and the number of the particles was counted.
- Example 1 Example 2
- Example 3 Comparative Example 1 Comparative Example 2 Average particle diameter (nm) 5 2 10 5 11 Particle size distribution (nm) ⁇ 2 ⁇ 1 ⁇ 4 ⁇ 5 ⁇ 2
- the metal oxides prepared in Examples 1 to 3 had an average particle diameter of 10 nm or less and a particle diameter distribution of 90 (number)% or more with respect to the total number of the metal oxide particles was ⁇ 4 nm .
- the average particle diameter was 5 nm and the particle diameter distribution was ⁇ 5 nm.
- the particle diameter distribution was ⁇ 2 nm and the average particle diameter was 11 nm.
- the solar simulator used was a 300W Xenon lamp (Newport 6258) and an AM 1.5G filter (Newport 81088A), and the intensity of light was set to 100 mW / cm 2 .
- the performance of the organic solar cells manufactured in Examples 1 to 3 is superior to that of the organic solar cells prepared in Comparative Examples 1 and 2. This is because in the organic solar cell manufactured in Examples 1 to 3, the metal oxide nanofiber layer has an average particle diameter of 10 nm or less and a particle diameter distribution of 90 (number)% or more with respect to the total number of the metal oxide particles based on the average particle diameter + -. 4 nm.
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
실시예 1 | 실시예 2 | 실시예 3 | 비교예 1 | 비교예 2 | |
평균 입경(nm) | 5 | 2 | 10 | 5 | 11 |
입경 분포(nm) | ±2 | ±1 | ±4 | ±5 | ±2 |
실시예 1 | 실시예 2 | 실시예 3 | 비교예 1 | 비교예 2 | |
에너지 변환 효율(%) | 1.56 | 0.92 | 0.77 | 0.92 | 0.53 |
단락전류밀도(mA/cm2) | 4.8 | 5.1 | 4.72 | 5.13 | 2.5 |
개방회로전압(V) | 0.76 | 0.78 | 0.77 | 0.78 | 0.65 |
Claims (14)
- 서로 대향 배치되는 음극 및 양극,상기 음극과 양극 사이에 위치하고, 정공수용체 및 전자수용체가 혼합된 광활성층, 그리고상기 양극과 상기 광활성층 사이에 위치하고, 평균 입경이 10nm 이하인 금속 산화물을 포함하는 금속 산화물 나노 박막층을 포함하며,상기 금속 산화물은 상기 금속 산화물 입자 전체 개수에 대하여 90(개수)% 이상의 입경 분포가 상기 평균 입경을 기준으로 ±4nm인 것인 유기 태양 전지.
- 제1항에 있어서,상기 금속 산화물은 평균 입경이 1 내지 8nm인 것인 유기 태양 전지.
- 제1항에 있어서,상기 금속 산화물은 상기 금속 산화물 입자 전체 개수에 대하여 90(개수)% 이상의 입경 분포가 상기 평균 입경을 기준으로 ±2nm인 것인 유기 태양 전지.
- 제1항에 있어서,상기 금속 산화물은 Ti, Zn, Sr, In, Ba, K, Nb, Fe, Ta, W, Sa, Bi, Ni, Cu, Mo, Ce, Pt, Ag, Rh 및 이들의 조합으로 이루어진 군에서 선택되는 어느 하나의 금속의 산화물인 것인 유기 태양 전지.
- 제1항에 있어서,상기 금속 산화물 나노 박막층은 두께가 50 내지 500nm인 것인 유기 태양 전지.
- 서로 대향 배치되는 음극 및 양극을 형성하는 단계,상기 음극과 양극 사이에 위치하고, 정공수용체 및 전자수용체가 혼합된 광활성층을 형성하는 단계, 그리고상기 양극과 상기 광활성층 사이에 금속 산화물 나노 박막층을 형성하는 단계를 포함하며,상기 금속 산화물 나노 박막층을 형성하는 단계는금속 원료 물질 및 염기성 첨가제를 용매에 첨가하여 혼합 용액을 제조하는 단계,상기 제조된 혼합 용액을 20 내지 60℃에서 저온 반응시켜 금속 산화물의 침전물을 제조하는 단계,상기 제조된 금속 산화물의 침전물을 유기 용매에 분산시키는 단계, 및상기 유기 용매에 분산된 금속 산화물을 코팅하는 단계를 포함하는 것인 유기 태양 전지의 제조 방법.
- 제6항에 있어서,상기 금속 원료 물질은 금속 클로라이드(chloride), 금속 아세테이트(acetate), 금속 시트레이트(citrate), 금속 (메트)아크릴레이트((meth)acrylate), 금속 브로마이드(bromide), 금속 시아나이드(cyanide), 금속 포스페이트(phosphate), 금속 술페이트(sulfate), 금속 술파이드(sulfide) 및 이들의 조합으로 이루어진 군에서 선택되는 어느 하나인 것인 유기 태양 전지의 제조 방법.
- 제7항에 있어서,상기 금속 원료 물질에서 상기 금속은 Ti, Zn, Sr, In, Ba, K, Nb, Fe, Ta, W, Sa, Bi, Ni, Cu, Mo, Ce, Pt, Ag, Rh 및 이들의 조합으로 이루어진 군에서 선택되는 어느 하나의 금속인 것인 유기 태양 전지의 제조 방법.
- 제6항에 있어서,상기 염기성 첨가제는 알코올 아민류, 과산화수소수, 수산화암모늄, 수산화나트륨, 수산화칼륨, 수산화루비듐, 수산화세슘, 수산화마그네슘, 수산화칼슘 및 이들의 조합으로 이루어진 군에서 선택되는 어느 하나인 것인 유기 태양 전지의 제조 방법.
- 제6항에 있어서,상기 유기 용매는 클로로포름, 클로로벤젠, 디클로로벤젠, 트리클로로벤젠, 테트라하이드로퓨란(THF), 디메틸포름아마이드(DMF), 디메틸아세트아마이드(DMAC), 디메틸술폭사이드(DMSO), 톨루엔, 알코올계 용매 및 이들의 조합으로 이루어진 군에서 선택되는 어느 하나인 것인 유기 태양 전지의 제조 방법.
- 제6항에 있어서,상기 저온 합성은 2 내지 10 시간 동안 이루어지는 것인 유기 태양 전지의 제조 방법.
- 제6항에 있어서,상기 유기 용매에 분산된 금속 산화물을 코팅하는 단계에서 상기 금속 산화물을 코팅한 후 150 내지 250℃에서 2 내지 10분 동안 소성하는 단계를 더 포함하는 것인 유기 태양 전지의 제조 방법.
- 제6항에 있어서,상기 혼합 용액을 제조하는 단계에서 상기 금속 원료 물질 및 상기 염기성 첨가제는 5 : 1 내지 1 : 3의 중량비로 첨가되는 것인 유기 태양 전지의 제조 방법.
- 제6항에 있어서,상기 금속 산화물은 평균 입경이 10nm 이하이고,상기 금속 산화물은 상기 금속 산화물 입자 전체 개수에 대하여 90(개수)% 이상의 입경 분포가 상기 평균 입경을 기준으로 ±4nm인 것인 유기 태양 전지의 제조 방법.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011800329511A CN102971864A (zh) | 2010-06-29 | 2011-06-28 | 有机太阳能电池及其制备方法 |
JP2013516510A JP5466790B2 (ja) | 2010-06-29 | 2011-06-28 | 有機太陽電池及びその製造方法 |
US13/319,669 US9166183B2 (en) | 2010-06-29 | 2011-06-28 | Organic solar cell and method for producing the same |
EP11801100.6A EP2590229A4 (en) | 2010-06-29 | 2011-06-28 | Organic solar cell and manufacturing method thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100061620A KR101415822B1 (ko) | 2010-06-29 | 2010-06-29 | 유기 태양 전지 및 이의 제조 방법 |
KR10-2010-0061620 | 2010-06-29 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2012002694A2 WO2012002694A2 (ko) | 2012-01-05 |
WO2012002694A3 WO2012002694A3 (ko) | 2012-05-03 |
WO2012002694A4 true WO2012002694A4 (ko) | 2012-06-21 |
Family
ID=45402539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2011/004689 WO2012002694A2 (ko) | 2010-06-29 | 2011-06-28 | 유기 태양 전지 및 이의 제조 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9166183B2 (ko) |
EP (1) | EP2590229A4 (ko) |
JP (1) | JP5466790B2 (ko) |
KR (1) | KR101415822B1 (ko) |
CN (1) | CN102971864A (ko) |
WO (1) | WO2012002694A2 (ko) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101371609B1 (ko) * | 2012-05-24 | 2014-03-07 | 서울대학교산학협력단 | 이중 계면층을 포함한 저분자 유기태양전지 |
KR101445024B1 (ko) * | 2013-02-01 | 2014-09-26 | 경북대학교 산학협력단 | 수분제거막이 형성된 광활성층을 가지는 유기태양전지 및 이의 제조방법 |
TW201503236A (zh) * | 2013-07-05 | 2015-01-16 | Sekisui Chemical Co Ltd | 半導體膜之製造方法、半導體膜製造用原料粒子、半導體膜、光電極及色素增感太陽電池 |
JP6585595B2 (ja) * | 2013-12-12 | 2019-10-02 | アファンタマ アクチェンゲゼルシャフト | 溶液で処理できる金属酸化物バッファー層を含む電子機器 |
KR101583055B1 (ko) * | 2014-05-08 | 2016-01-06 | 한국세라믹기술원 | 볼로미터용 저항 박막 제조방법 및 볼로미터 |
US10714269B2 (en) | 2014-11-20 | 2020-07-14 | Brown University | Method of making coated substrates |
KR101721565B1 (ko) * | 2015-06-25 | 2017-04-18 | 한국기계연구원 | 이중 주파수 전력 구동 유도결합 플라즈마 토치 및 이를 이용한 나노 입자 생성 장치 |
CN105762283B (zh) * | 2016-05-05 | 2018-01-19 | 天津市职业大学 | 一种钙钛矿太阳电池光吸收层纳米溶胶镀膜液及制备方法 |
EP3358638A4 (en) * | 2016-06-15 | 2019-01-16 | Kolon Industries, Inc. | ORGANIC SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME |
EP4199119A1 (en) * | 2017-03-31 | 2023-06-21 | Peafowl Plasmonics AB | Ultra-thin plasmonic solar cells, methods for their manufacture and use |
CN109378386B (zh) * | 2018-10-16 | 2022-06-07 | 南京邮电大学 | 调控无铅钙钛矿太阳能电池形貌的方法及制备的电池器件 |
CN110459681A (zh) * | 2019-07-31 | 2019-11-15 | 青岛大学 | 基于聚乙烯亚胺修饰的氧化锌电子传输层构建柔性结构的聚合物太阳能电池及其制备方法 |
CN117809985B (zh) * | 2024-02-29 | 2024-05-10 | 山东恒嘉高纯铝业科技股份有限公司 | 一种含有六铝酸钙的薄膜电极及其制备方法和应用 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4934770B2 (ja) * | 2003-04-15 | 2012-05-16 | 国立大学法人金沢大学 | 有機太陽電池 |
US8158881B2 (en) * | 2005-07-14 | 2012-04-17 | Konarka Technologies, Inc. | Tandem photovoltaic cells |
US20080006324A1 (en) * | 2005-07-14 | 2008-01-10 | Konarka Technologies, Inc. | Tandem Photovoltaic Cells |
JP2007027625A (ja) * | 2005-07-21 | 2007-02-01 | Matsushita Electric Works Ltd | 有機太陽電池及びその製造方法 |
US20070028961A1 (en) * | 2005-08-04 | 2007-02-08 | General Electric Company | Organic dye compositions and use thereof in photovoltaic cells |
JP5298308B2 (ja) * | 2005-09-06 | 2013-09-25 | 国立大学法人京都大学 | 有機薄膜光電変換素子及びその製造方法 |
JP2009532851A (ja) * | 2006-02-16 | 2009-09-10 | ソレクサント・コーポレイション | ナノ粒子増感ナノ構造太陽電池 |
US8247801B2 (en) * | 2006-03-31 | 2012-08-21 | Imec | Organic semi-conductor photo-detecting device |
US20090126779A1 (en) * | 2006-09-14 | 2009-05-21 | The Regents Of The University Of California | Photovoltaic devices in tandem architecture |
US7799990B2 (en) * | 2007-03-12 | 2010-09-21 | Northwestern University | Electron-blocking layer / hole-transport layer for organic photovoltaics and applications of same |
US8242356B2 (en) * | 2007-04-27 | 2012-08-14 | Srini Balasubramanian | Organic photovoltaic cells |
KR100972735B1 (ko) * | 2007-09-18 | 2010-07-27 | 광주과학기술원 | 산화-환원 반응을 이용한 유기-무기 하이브리드형 접합 소자 및 이를 이용하는 유기태양전지 |
US20090188558A1 (en) * | 2008-01-25 | 2009-07-30 | University Of Washington | Photovoltaic devices having metal oxide electron-transport layers |
GB0802934D0 (en) * | 2008-02-18 | 2008-03-26 | Univ Denmark Tech Dtu | Air stable photovoltaic device |
US20110049504A1 (en) * | 2008-05-13 | 2011-03-03 | Sumitomo Chemical Company, Limited | Photoelectric conversion element |
KR20090123739A (ko) * | 2008-05-28 | 2009-12-02 | 광주과학기술원 | 유무기 태양전지 및 이의 제조 방법 |
KR100999377B1 (ko) * | 2008-06-18 | 2010-12-09 | 한국과학기술원 | 유기기반 태양전지 및 그의 제조방법 |
CN102177599A (zh) * | 2008-09-26 | 2011-09-07 | 密歇根大学董事会 | 有机叠层太阳电池 |
KR101334222B1 (ko) * | 2009-03-18 | 2013-11-29 | 한양대학교 산학협력단 | 태양 전지 및 그 제조 방법 |
CN101521261B (zh) | 2009-04-09 | 2011-11-09 | 西南大学 | 一种基于界面复合产生自由载流子的新型有机太阳能电池 |
EP2256839B1 (en) * | 2009-05-28 | 2019-03-27 | IMEC vzw | Single junction or a multijunction photovoltaic cells and method for their fabrication |
US20100326497A1 (en) * | 2009-06-29 | 2010-12-30 | The Regents Of The University Of California | Highly efficient tandem polymer photovoltaic cells |
KR101012203B1 (ko) * | 2009-09-29 | 2011-02-08 | 광주과학기술원 | 적층형 병렬 유기태양전지 |
WO2011056778A2 (en) * | 2009-11-03 | 2011-05-12 | University Of Florida Research Foundation, Inc. | Interlayer for organic solar cells |
CN101719421B (zh) | 2009-12-02 | 2012-02-15 | 中国科学院物理研究所 | 一种光阳极及其柔性太阳能电池 |
KR101085101B1 (ko) * | 2009-12-24 | 2011-11-21 | 한국기계연구원 | 유기태양전지의 p형 전도막으로 사용되는 금속산화물-탄소나노튜브 복합막, 이의 제조방법 및 이를 이용한 광전변환효율이 향상된 유기태양전지 |
GB201008144D0 (en) * | 2010-05-14 | 2010-06-30 | Solar Press Uk The Ltd | Surface modified electrode layers in organic photovoltaic cells |
TWI422525B (zh) * | 2010-09-10 | 2014-01-11 | Univ Nat Chiao Tung | 可交聯之富勒烯衍生物及其反式結構有機太陽能電池 |
US20120132272A1 (en) * | 2010-11-19 | 2012-05-31 | Alliance For Sustainable Energy, Llc. | Solution processed metal oxide thin film hole transport layers for high performance organic solar cells |
-
2010
- 2010-06-29 KR KR1020100061620A patent/KR101415822B1/ko active IP Right Grant
-
2011
- 2011-06-28 EP EP11801100.6A patent/EP2590229A4/en not_active Withdrawn
- 2011-06-28 US US13/319,669 patent/US9166183B2/en active Active
- 2011-06-28 JP JP2013516510A patent/JP5466790B2/ja not_active Expired - Fee Related
- 2011-06-28 WO PCT/KR2011/004689 patent/WO2012002694A2/ko active Application Filing
- 2011-06-28 CN CN2011800329511A patent/CN102971864A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2013529847A (ja) | 2013-07-22 |
JP5466790B2 (ja) | 2014-04-09 |
US9166183B2 (en) | 2015-10-20 |
EP2590229A2 (en) | 2013-05-08 |
CN102971864A (zh) | 2013-03-13 |
WO2012002694A2 (ko) | 2012-01-05 |
WO2012002694A3 (ko) | 2012-05-03 |
KR20120001046A (ko) | 2012-01-04 |
EP2590229A4 (en) | 2017-04-05 |
KR101415822B1 (ko) | 2014-07-09 |
US20120111403A1 (en) | 2012-05-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2012002694A4 (ko) | 유기 태양 전지 및 이의 제조 방법 | |
Mann et al. | Efficient and stable planar perovskite solar cells with a PEDOT: PSS/SrGO hole interfacial layer | |
Wu et al. | Efficient electron-blocking layer-free planar heterojunction perovskite solar cells with a high open-circuit voltage | |
Olson et al. | Hybrid photovoltaic devices of polymer and ZnO nanofiber composites | |
Oku et al. | Fabrication and characterization of fullerene/porphyrin bulk heterojunction solar cells | |
Oey et al. | Polymer–TiO2 solar cells: TiO2 interconnected network for improved cell performance | |
WO2013180361A1 (ko) | 아민기를 갖는 비공액 고분자를 포함하는 유기전자소자용 기능층 및 이를 포함하는 유기전자소자 | |
KR101082910B1 (ko) | 접합고리계 화합물을 포함하는 유기태양전지 | |
US20090194167A1 (en) | Methods of Forming Photoactive Layer | |
KR101810900B1 (ko) | 전도성 고분자 화합물, 이를 포함하는 유기태양전지 및 이의 제조방법 | |
WO2015167230A1 (ko) | 태양전지 및 이의 제조방법 | |
WO2013151142A1 (ja) | 有機光電変換素子およびこれを用いた太陽電池 | |
KR20150125616A (ko) | 유기 태양 전지 및 이의 제조방법 | |
WO2010107261A2 (ko) | 태양 전지 및 그 제조 방법 | |
WO2010110590A2 (ko) | 태양 전지 및 그 제조 방법 | |
Liu et al. | Efficiency enhancement of polymer solar cells by applying an alcohol-soluble fullerene aminoethanol derivative as a cathode buffer layer | |
WO2018043910A1 (ko) | 페로브 스카이트 태양전지 효율 향상을 위한 정공수송물질 | |
KR20110080247A (ko) | 나노입자 및 고전도성 유무기 복합 버퍼층을 도입한 대면적 고효율 유기태양전지 및 그 제조방법 | |
WO2023058979A1 (ko) | Ptaa 및 pif8를 포함하는 정공 수송물질 및 이를 이용한 광소자 | |
Peng et al. | Semiconducting polymer-incorporated nanocrystalline TiO2 particles for photovoltaic applications | |
WO2020040361A1 (ko) | 박막 및 그 형성 방법과 박막을 포함하는 페로브스카이트 태양전지 | |
WO2017155362A1 (ko) | 유기 태양전지 및 이의 제조방법 | |
JP2010205976A (ja) | 有機光電変換素子、及びその製造方法 | |
WO2013100284A1 (en) | Method for manufacturing organic solar cell and the organic solar cell manufacturing by using the same | |
WO2011101993A1 (ja) | 太陽電池およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201180032951.1 Country of ref document: CN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13319669 Country of ref document: US |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 11801100 Country of ref document: EP Kind code of ref document: A2 |
|
ENP | Entry into the national phase |
Ref document number: 2013516510 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2011801100 Country of ref document: EP |