CN105762283B - 一种钙钛矿太阳电池光吸收层纳米溶胶镀膜液及制备方法 - Google Patents
一种钙钛矿太阳电池光吸收层纳米溶胶镀膜液及制备方法 Download PDFInfo
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- CN105762283B CN105762283B CN201610288339.5A CN201610288339A CN105762283B CN 105762283 B CN105762283 B CN 105762283B CN 201610288339 A CN201610288339 A CN 201610288339A CN 105762283 B CN105762283 B CN 105762283B
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 87
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- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910003074 TiCl4 Inorganic materials 0.000 claims description 11
- HGWOWDFNMKCVLG-UHFFFAOYSA-N [O--].[O--].[Ti+4].[Ti+4] Chemical compound [O--].[O--].[Ti+4].[Ti+4] HGWOWDFNMKCVLG-UHFFFAOYSA-N 0.000 claims description 10
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- NNMXSTWQJRPBJZ-UHFFFAOYSA-K europium(iii) chloride Chemical compound Cl[Eu](Cl)Cl NNMXSTWQJRPBJZ-UHFFFAOYSA-K 0.000 claims description 8
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
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- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
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- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
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- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
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- 150000001298 alcohols Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Laminated Bodies (AREA)
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Families Citing this family (8)
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KR20180090116A (ko) | 2017-02-02 | 2018-08-10 | 삼성전자주식회사 | 광 필터 및 이를 포함하는 광 분광기 |
CN107275486B (zh) * | 2017-05-24 | 2020-03-17 | 西安交通大学 | 双层双尺度复合结构氧化物-二氧化钛薄膜及其制备工艺和用途 |
CN107170891A (zh) * | 2017-05-24 | 2017-09-15 | 华南师范大学 | 一种宽光谱钙钛矿太阳能电池及其制备方法 |
CN107452878A (zh) * | 2017-08-28 | 2017-12-08 | 戚明海 | 一种含有钛酸酯的钙钛矿太阳能电池及其制作方法 |
CN110938429B (zh) * | 2018-09-25 | 2021-10-26 | 深圳光峰科技股份有限公司 | 一种波长转换材料 |
JP7198688B2 (ja) * | 2019-03-04 | 2023-01-11 | シャープ株式会社 | ハイブリッド粒子、光電変換素子、感光体及び画像形成装置 |
CN110420134B (zh) * | 2019-08-28 | 2022-04-15 | 广州骏朗生物科技有限公司 | 一种片状硅石/纳米TiO2复合材料及其制备方法 |
CN117784292B (zh) * | 2023-11-24 | 2024-08-16 | 江苏东方硕华光学材料有限公司 | 一种高吸收光学镀膜材料及其制备方法 |
Citations (3)
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CN104538192A (zh) * | 2014-12-19 | 2015-04-22 | 常州大学 | 一种多孔结构有机/无机杂化钙钛矿电池及其制备方法 |
CN104576930A (zh) * | 2015-01-06 | 2015-04-29 | 宁波大学 | 钙钛矿太阳能电池及其制备方法 |
US9166183B2 (en) * | 2010-06-29 | 2015-10-20 | Kolon Industries, Inc. | Organic solar cell and method for producing the same |
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US9166183B2 (en) * | 2010-06-29 | 2015-10-20 | Kolon Industries, Inc. | Organic solar cell and method for producing the same |
CN104538192A (zh) * | 2014-12-19 | 2015-04-22 | 常州大学 | 一种多孔结构有机/无机杂化钙钛矿电池及其制备方法 |
CN104576930A (zh) * | 2015-01-06 | 2015-04-29 | 宁波大学 | 钙钛矿太阳能电池及其制备方法 |
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