WO2012002120A1 - 無鉛低融点ガラス組成物 - Google Patents
無鉛低融点ガラス組成物 Download PDFInfo
- Publication number
- WO2012002120A1 WO2012002120A1 PCT/JP2011/063198 JP2011063198W WO2012002120A1 WO 2012002120 A1 WO2012002120 A1 WO 2012002120A1 JP 2011063198 W JP2011063198 W JP 2011063198W WO 2012002120 A1 WO2012002120 A1 WO 2012002120A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- glass
- lead
- glass composition
- range
- melting point
- Prior art date
Links
- 239000011521 glass Substances 0.000 title claims abstract description 67
- 239000000203 mixture Substances 0.000 title claims abstract description 26
- 238000002844 melting Methods 0.000 title claims abstract description 19
- 230000008018 melting Effects 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000012776 electronic material Substances 0.000 claims description 8
- 239000000945 filler Substances 0.000 claims description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 3
- 239000003566 sealing material Substances 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 238000004031 devitrification Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 238000007496 glass forming Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 229910000174 eucryptite Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004571 lime Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/12—Silica-free oxide glass compositions
- C03C3/14—Silica-free oxide glass compositions containing boron
- C03C3/145—Silica-free oxide glass compositions containing boron containing aluminium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
- C03C3/066—Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
- H01J11/34—Vessels, containers or parts thereof, e.g. substrates
- H01J11/38—Dielectric or insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
- H01J11/48—Sealing, e.g. seals specially adapted for leading-in conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/86—Vessels; Containers; Vacuum locks
- H01J29/863—Vessels or containers characterised by the material thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J5/00—Details relating to vessels or to leading-in conductors common to two or more basic types of discharge tubes or lamps
- H01J5/02—Vessels; Containers; Shields associated therewith; Vacuum locks
- H01J5/04—Vessels or containers characterised by the material thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J5/00—Details relating to vessels or to leading-in conductors common to two or more basic types of discharge tubes or lamps
- H01J5/20—Seals between parts of vessels
- H01J5/22—Vacuum-tight joints between parts of vessel
- H01J5/24—Vacuum-tight joints between parts of vessel between insulating parts of vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/30—Vessels; Containers
- H01J61/302—Vessels; Containers characterised by the material of the vessel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133302—Rigid substrates, e.g. inorganic substrates
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/09—Materials and properties inorganic glass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/68—Green display, e.g. recycling, reduction of harmful substances
Definitions
- the present invention relates to an insulating material for an electronic material substrate represented by a plasma display panel (PDP), a liquid crystal display panel, an electroluminescence panel, a fluorescent display panel, an electrochromic display panel, a light emitting diode display panel, a gas discharge display panel, and the like.
- PDP plasma display panel
- the present invention relates to a lead-free low-melting glass composition used as a coating material and a sealing material.
- glass has been used as an adhesive or sealing material for electronic components, or as a coating material for protecting and insulating electrodes and resistors formed on electronic components.
- display panels such as plasma display panels, liquid crystal display panels, electroluminescence panels, fluorescent display panels, electrochromic display panels, light emitting diode display panels, gas discharge display panels, etc. has been developed.
- the glass used for these materials is required to have various properties such as chemical durability, mechanical strength, fluidity, and electrical insulation depending on the application, but in particular, when used as a sealing material, the fluidity at low temperatures. Is an important factor. If the fluidity is insufficient, there is a risk of leakage from the seal portion, and the characteristics required for the display panel cannot be obtained. Therefore, a low-melting glass containing a large amount of PbO that has an extremely large effect of lowering the melting point of the glass is widely used in any application (see, for example, Patent Document 1).
- PbO has a great detrimental effect on the human body and the environment.
- PbO has a tendency to avoid its use, and lead-free electronic materials such as PDP are being studied (for example, see Patent Document 2 and Patent Document 3).
- the lead component is an important component for making the glass have a low melting point, it has a great detrimental effect on the human body and the environment. In recent years, there has been a tendency to avoid its use. Lead-free glass is required for electronic materials such as PDPs. Yes.
- the above-mentioned Japanese Patent Application Laid-Open No. 2001-52621 has a basic problem that it contains lead, although the effect as a low melting point glass is recognized.
- Japanese Patent Laid-Open No. 2000-219536 and Japanese Patent Laid-Open No. 9-227214 are lead-free glass, but are unstable glass. Is not fully demonstrated.
- the lead component is not substantially contained, and in mass%, SiO 2 is 0 to 8, B 2 O 3 is 2 to 12, ZnO is 2 to 7, and RO (MgO + CaO + SrO + BaO) is 0.5 to 3 CuO and 0.5 ⁇ 5, Bi 2 O 3 of 80 ⁇ 90, Fe 2 O 3 0.1 to 3, lead-free low-melting glass, characterized in that the Al 2 O 3 containing 0.1 to 3 A composition (first glass composition) is provided.
- the first glass composition may be a lead-free low melting point glass composition (second glass composition) characterized by containing 1 to 40% by mass of a refractory filler.
- second glass composition characterized by containing 1 to 40% by mass of a refractory filler.
- an electronic material substrate characterized by using the first or second glass composition.
- a display panel characterized by using the first or second glass composition.
- the present invention in electronic materials typified by plasma display panels, liquid crystal display panels, electroluminescence panels, fluorescent display panels, electrochromic display panels, light-emitting diode display panels, gas discharge display panels, and the like, it is stable and hardly crystallized at high temperatures.
- a lead-free low melting point glass composition can be obtained. Furthermore, since it does not substantially contain a lead component, there is no harmful effect on the human body and the environment.
- SiO 2 is 0 to 8
- B 2 O 3 is 2 to 12
- ZnO is 2 to 7
- RO MgO + CaO + SrO + BaO
- CuO is 0.5 to 5
- O 3 is the 80 ⁇ 90, Fe 2 O 3 and 0.1 to 3, Al 2 O 3 and lead-free low-melting-point glass composition characterized in that it comprises 0.1-3.
- This glass composition may contain 1 to 40% by mass of a refractory filler with respect to 100% by mass in total of the above glass components.
- SiO 2 is a glass-forming component, and can coexist with B 2 O 3 , which is another glass-forming component, to form a stable glass.
- B 2 O 3 is another glass-forming component, to form a stable glass.
- 0-8% mass%, the same applies below
- the softening point of the glass will increase, making the formability and workability difficult. More preferably, it is in the range of 0 to 4%.
- B 2 O 3 is a glass-forming component that facilitates melting of the glass, suppresses an excessive increase in the thermal expansion coefficient of the glass, imparts moderate fluidity to the glass during baking, and lowers the dielectric constant of the glass. It is. It is preferably contained in the range of 2 to 12% in the glass. If it is less than 2%, the fluidity of the glass becomes insufficient, and the sinterability is impaired. On the other hand, if it exceeds 12%, the softening point of the glass rises, and the moldability and workability become difficult. More preferably, it is in the range of 4 to 8%.
- ZnO lowers the softening point of the glass and adjusts the thermal expansion coefficient to an appropriate range, and is contained in the glass in a range of 2 to 7%. If it is less than 2%, the above action cannot be exhibited. If it exceeds 7%, the glass becomes unstable and devitrification tends to occur. More preferably, it is in the range of 3 to 7%.
- RO MgO + CaO + SrO + BaO
- CuO suppresses devitrification when the glass is melted or fired, and is contained in the range of 0.5 to 5%. If it exceeds 5%, the stability of the glass is lowered. More preferably, it is in the range of 1 to 3%.
- Bi 2 O 3 lowers the softening point of the glass, giving fluidity, and adjusts the appropriate range of thermal expansion coefficient, it is desirable to include in the range of 80-90%. If it is less than 80%, the above effect cannot be exhibited, and if it exceeds 90%, the thermal expansion coefficient becomes too high. More preferably, it is in the range of 83 to 88%.
- Fe 2 O 3 suppresses devitrification when the glass is melted or fired, and is contained in the range of 0.1 to 3%. If it exceeds 3%, the stability of the glass is lowered. More preferably, it is in the range of 0.1 to 2%.
- Al 2 O 3 suppresses devitrification when the glass is melted or fired, and is contained in the range of 0.1 to 3%. If it exceeds 3%, the stability of the glass is lowered. More preferably, it is in the range of 0.1 to 2%.
- an In 2 O 3 expressed by the general oxides, TiO 2, SnO 2, TeO 2 or the like may be appropriately added in a range that does not impair the above properties.
- substantially not containing PbO By substantially not containing PbO, it is possible to eliminate the influence on the human body and the environment.
- substantially free of PbO means an amount of PbO mixed as an impurity in the glass raw material. For example, if it is in the range of 0.3% by mass or less in the low-melting glass, there is almost no adverse effect on the human body, environment, insulation characteristics, etc. as described above, and it is not substantially affected by PbO. become.
- a refractory filler can be added to the total of 100% by mass of the glass components.
- the thermal expansion coefficient can be adjusted, and the mechanical strength can be improved. If it is 40% by mass or more, the fluidity as the sealing material is lowered, causing leakage. Preferably it is 3 to 20% of range.
- the refractory filler cordierite, ⁇ -eucryptite, zircon, mullite, alumina and the like can be used.
- the lead-free low-melting glass composition of the present invention can be suitably used for electronic material substrates and display panels.
- the lead-free low melting point glass composition of the present invention is often used after being powdered.
- This powdered glass is generally mixed with a refractory filler, a heat-resistant pigment or the like, if necessary, and then kneaded with an organic oil to form a paste.
- a transparent glass substrate particularly soda-lime-silica glass, glass similar to the glass (high strain point glass), or alumino-lime borosilicate glass with little (or almost no) alkali is often used. Yes.
- various inorganic raw materials are weighed and mixed so that the glass powder has the predetermined composition described in the examples to prepare a raw material batch.
- This raw material batch was put into a platinum crucible and heated and melted in an electric heating furnace at 1000 to 1300 ° C. for 1 to 2 hours to have the compositions shown in Examples 1 to 7 in Table 1 and Comparative Examples 1 to 4 in Table 2.
- Glass was obtained. A part of the glass was poured into a mold, made into a block shape, and used for measurement of thermal properties (thermal expansion coefficient, softening point). The remaining glass was flaked with a rapid cooling twin roll molding machine and sized with a pulverizer into a powder having an average particle size of 1 to 4 ⁇ m and a maximum particle size of less than 10 ⁇ m.
- the softening point was measured using a thermal analyzer TG-DTA (manufactured by Rigaku Corporation).
- the thermal expansion coefficient was determined from the amount of elongation at 30 to 300 ° C. when the temperature was increased at 5 ° C./min using a thermal dilatometer.
- the obtained glass powder was press-molded into a 10 mm ⁇ 10 mm ⁇ cylindrical shape using a hand press and fired at 450 ° C. for 30 minutes. Further, ⁇ -eucryptite powder as a refractory filler was mixed at a predetermined ratio, and the press-molded body was similarly fired at 450 ° C. for 30 minutes.
- the degree of spread after firing of the press-molded product is closely related to the crystallinity and fluidity of the glass.
- the one that is sufficiently spread after firing is ⁇ (high fluidity), and the one that is not spread sufficiently (The fluidity is low).
- the degree of crystallization is low and the fluidity is high within the composition range of the present invention. That is, it is suitable as a sealing material for electronic material substrates and display panels.
- Comparative Examples 1 to 4 in Table 2 that are outside the composition range of the present invention have remarkable crystallization during firing, or do not exhibit preferable physical property values, and cannot be applied as sealing materials.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Glass Compositions (AREA)
- Gas-Filled Discharge Tubes (AREA)
Abstract
Description
低融点ガラス組成および、各種試験結果を表に示す。
Claims (4)
- 実質的に鉛成分を含まず、質量%で、SiO2を0~8、B2O3を2~12、Al2O3を0.1~3、ZnOを2~7、RO(MgO、CaO、SrO、BaOの合計)を0.5~3、CuOを0.5~5、Bi2O3を80~90、Fe2O3を0.1~3を含むことを特徴とする無鉛低融点ガラス組成物。
- 1~40質量%の耐火物フィラーを含有することを特徴とする請求項1に記載の無鉛低融点ガラス組成物。
- 請求項1または2に記載の無鉛低融点ガラス組成物を使用していることを特徴とする電子材料用基板。
- 請求項1または2に記載の無鉛低融点ガラス組成物を使っていることを特徴とするディスプレイ用パネル。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11800588.3A EP2562141A4 (en) | 2010-06-29 | 2011-06-09 | LEAD-FREE GLASS COMPOSITION WITH LOW MELTING POINT |
US13/642,033 US8980776B2 (en) | 2010-06-29 | 2011-06-09 | Lead-free low melting point glass composition |
CN2011800314200A CN102958859A (zh) | 2010-06-29 | 2011-06-09 | 无铅低熔点玻璃组合物 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010147805A JP2012012231A (ja) | 2010-06-29 | 2010-06-29 | 無鉛低融点ガラス組成物 |
JP2010-147805 | 2010-06-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012002120A1 true WO2012002120A1 (ja) | 2012-01-05 |
Family
ID=45401850
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2011/063198 WO2012002120A1 (ja) | 2010-06-29 | 2011-06-09 | 無鉛低融点ガラス組成物 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8980776B2 (ja) |
EP (1) | EP2562141A4 (ja) |
JP (1) | JP2012012231A (ja) |
CN (1) | CN102958859A (ja) |
TW (1) | TWI518046B (ja) |
WO (1) | WO2012002120A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103748667B (zh) * | 2011-08-29 | 2016-09-14 | 新电元工业株式会社 | 半导体接合保护用玻璃复合物、半导体装置的制造方法及半导体装置 |
JP6075715B2 (ja) * | 2012-09-25 | 2017-02-08 | 日本電気硝子株式会社 | ビスマス系ガラス及びこれを用いた封着材料 |
JP6963214B2 (ja) * | 2016-04-01 | 2021-11-05 | 日本電気硝子株式会社 | ガラス粉末及びそれを用いた封着材料 |
JP6952950B2 (ja) * | 2016-04-21 | 2021-10-27 | 日本電気硝子株式会社 | 複合粉末材料 |
JP7148877B2 (ja) * | 2016-04-21 | 2022-10-06 | 日本電気硝子株式会社 | セラミック粉末 |
US10807905B2 (en) | 2016-04-21 | 2020-10-20 | Nippon Electric Glass Co., Ltd. | Ceramic powder, composite powder material, and sealing material |
JP6913276B2 (ja) * | 2017-01-26 | 2021-08-04 | 日本電気硝子株式会社 | 気密パッケージ |
KR102387759B1 (ko) * | 2017-06-23 | 2022-04-19 | 도요세이칸 그룹 홀딩스 가부시키가이샤 | 플렉시블 디바이스용 기판 |
CN107799373B (zh) * | 2017-09-30 | 2019-05-17 | 无锡厚发自动化设备有限公司 | 一种改性非晶玻璃粉及其制备方法 |
EP3851557A4 (en) * | 2018-09-12 | 2022-01-05 | Toyo Seikan Group Holdings, Ltd. | SUBSTRATE FOR FLEXIBLE DEVICES |
CN111548017A (zh) * | 2019-02-11 | 2020-08-18 | 南通瑞森光学股份有限公司 | 一种低温封接玻璃及其制作工艺 |
CN110092585A (zh) * | 2019-06-12 | 2019-08-06 | 李海洋 | 耐辐照高可靠性低熔点荧光玻璃封装材料及其制备方法 |
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JPH09227214A (ja) | 1996-02-22 | 1997-09-02 | Asahi Glass Co Ltd | セラミックカラー組成物 |
JP2000219536A (ja) | 1999-01-27 | 2000-08-08 | Asahi Glass Co Ltd | 低吸湿性ガラスフリットおよびガラスセラミックス組成物 |
JP2001052621A (ja) | 1999-08-13 | 2001-02-23 | Nippon Electric Glass Co Ltd | プラズマディスプレーパネル用材料及びガラス粉末 |
JP2007210870A (ja) * | 2005-03-09 | 2007-08-23 | Nippon Electric Glass Co Ltd | ビスマス系ガラス組成物およびビスマス系封着材料 |
JP2009155200A (ja) * | 2007-12-06 | 2009-07-16 | Nippon Electric Glass Co Ltd | 封着材料 |
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US6778355B2 (en) * | 2000-05-11 | 2004-08-17 | Matsushita Electric Industrial Co., Ltd. | Glass composition, sealing glass for magnetic head and magnetic head using the same |
JP4136346B2 (ja) * | 2001-09-18 | 2008-08-20 | 日本山村硝子株式会社 | 封着用組成物 |
US7291573B2 (en) * | 2004-11-12 | 2007-11-06 | Asahi Techno Glass Corporation | Low melting glass, sealing composition and sealing paste |
JP2006143480A (ja) * | 2004-11-16 | 2006-06-08 | Nippon Electric Glass Co Ltd | Bi2O3−B2O3系ガラス組成物およびBi2O3−B2O3系封着材料 |
JP4941880B2 (ja) | 2006-01-16 | 2012-05-30 | 日本電気硝子株式会社 | ビスマス系ガラス組成物およびビスマス系封着材料 |
US7556748B2 (en) * | 2005-04-14 | 2009-07-07 | E. I. Du Pont De Nemours And Company | Method of manufacture of semiconductor device and conductive compositions used therein |
JP4766444B2 (ja) * | 2005-05-31 | 2011-09-07 | 日本電気硝子株式会社 | ビスマス系無鉛封着材料 |
JP5534550B2 (ja) * | 2008-04-18 | 2014-07-02 | 日本電気硝子株式会社 | 色素増感型太陽電池用ガラス組成物および色素増感型太陽電池用材料 |
JP5476850B2 (ja) * | 2009-08-14 | 2014-04-23 | 日本電気硝子株式会社 | タブレットおよびタブレット一体型排気管 |
-
2010
- 2010-06-29 JP JP2010147805A patent/JP2012012231A/ja active Pending
-
2011
- 2011-06-09 CN CN2011800314200A patent/CN102958859A/zh active Pending
- 2011-06-09 US US13/642,033 patent/US8980776B2/en not_active Expired - Fee Related
- 2011-06-09 EP EP11800588.3A patent/EP2562141A4/en not_active Withdrawn
- 2011-06-09 WO PCT/JP2011/063198 patent/WO2012002120A1/ja active Application Filing
- 2011-06-17 TW TW100121321A patent/TWI518046B/zh not_active IP Right Cessation
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JPH09227214A (ja) | 1996-02-22 | 1997-09-02 | Asahi Glass Co Ltd | セラミックカラー組成物 |
JP2000219536A (ja) | 1999-01-27 | 2000-08-08 | Asahi Glass Co Ltd | 低吸湿性ガラスフリットおよびガラスセラミックス組成物 |
JP2001052621A (ja) | 1999-08-13 | 2001-02-23 | Nippon Electric Glass Co Ltd | プラズマディスプレーパネル用材料及びガラス粉末 |
JP2007210870A (ja) * | 2005-03-09 | 2007-08-23 | Nippon Electric Glass Co Ltd | ビスマス系ガラス組成物およびビスマス系封着材料 |
JP2009155200A (ja) * | 2007-12-06 | 2009-07-16 | Nippon Electric Glass Co Ltd | 封着材料 |
Also Published As
Publication number | Publication date |
---|---|
EP2562141A1 (en) | 2013-02-27 |
EP2562141A4 (en) | 2016-09-14 |
TWI518046B (zh) | 2016-01-21 |
TW201226356A (en) | 2012-07-01 |
US8980776B2 (en) | 2015-03-17 |
JP2012012231A (ja) | 2012-01-19 |
CN102958859A (zh) | 2013-03-06 |
US20130090226A1 (en) | 2013-04-11 |
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