WO2011118203A1 - Composition de particules de semi-conducteur composé, film semi-conducteur composé et son procédé, élément de conversion photoélectrique et cellule solaire - Google Patents

Composition de particules de semi-conducteur composé, film semi-conducteur composé et son procédé, élément de conversion photoélectrique et cellule solaire Download PDF

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Publication number
WO2011118203A1
WO2011118203A1 PCT/JP2011/001687 JP2011001687W WO2011118203A1 WO 2011118203 A1 WO2011118203 A1 WO 2011118203A1 JP 2011001687 W JP2011001687 W JP 2011001687W WO 2011118203 A1 WO2011118203 A1 WO 2011118203A1
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WIPO (PCT)
Prior art keywords
particle
compound semiconductor
group
semiconductor
composition
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Application number
PCT/JP2011/001687
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English (en)
Japanese (ja)
Inventor
良太 小宮
貴理博 中野
寛政 澁谷
秀利 工藤
一彦 松浦
佐々木　繁
鶴田　仁志
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株式会社クラレ
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Application filed by 株式会社クラレ filed Critical 株式会社クラレ
Priority to JP2012506845A priority Critical patent/JPWO2011118203A1/ja
Publication of WO2011118203A1 publication Critical patent/WO2011118203A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

La présente invention a trait à une composition de particules de semi-conducteur composé de chalcopyrite qui permet d'augmenter l'efficacité de conversion photoélectrique d'un film semi-conducteur composé. La composition de particules de semi-conducteur composé selon la présente invention comprend : des particules (A) qui sont formées à partir d'une pluralité d'au moins un type de particules de semi-conducteur et qui ont un diamètre moyen des particules supérieur ou égal à 100 nm, tel que calculé au moyen d'un microscope électronique en transmission ; et un matériau de remplissage (B), qui est formé à partir d'une pluralité d'au moins un type de particules de semi-conducteur, est constitué de particules (BX) qui ont un diamètre moyen des particules inférieur à celui des particules (A) tel que calculé au moyen d'un microscope électronique en transmission, et/ou d'une composition de précurseur de semi-conducteur non solide (BY) qui forme un semi-conducteur solide lorsqu'elle est chauffée. (A) et (B) sont formés à partir de semi-conducteurs composés de chalcopyrite chacun étant représenté par la formule générale ci-dessous, et le matériau de remplissage (B) remplit les espaces entes les particules (A). (i) LMX2 (où, L représente au moins un type d'élément de groupe IB, M représente au moins un type de groupe IIIB, et X représente au moins un type de groupe VIB).
PCT/JP2011/001687 2010-03-23 2011-03-23 Composition de particules de semi-conducteur composé, film semi-conducteur composé et son procédé, élément de conversion photoélectrique et cellule solaire WO2011118203A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012506845A JPWO2011118203A1 (ja) 2010-03-23 2011-03-23 化合物半導体粒子組成物、化合物半導体膜とその製造方法、光電変換素子、及び太陽電池

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010065467 2010-03-23
JP2010-065467 2010-03-23
JP2011055789 2011-03-14
JP2011-055789 2011-03-14

Publications (1)

Publication Number Publication Date
WO2011118203A1 true WO2011118203A1 (fr) 2011-09-29

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PCT/JP2011/001687 WO2011118203A1 (fr) 2010-03-23 2011-03-23 Composition de particules de semi-conducteur composé, film semi-conducteur composé et son procédé, élément de conversion photoélectrique et cellule solaire

Country Status (3)

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JP (1) JPWO2011118203A1 (fr)
TW (1) TW201201373A (fr)
WO (1) WO2011118203A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013129537A1 (fr) * 2012-02-28 2013-09-06 Tdk株式会社 Cellule solaire à semiconducteur composé
WO2013180137A1 (fr) * 2012-05-30 2013-12-05 凸版印刷株式会社 Procédé de fabrication pour une couche mince semi-conductrice composée, et pile solaire dotée de ladite couche mince semi-conductrice composée
JP2015107899A (ja) * 2013-12-05 2015-06-11 旭化成株式会社 結晶成長促進剤及びそれを用いたカルコゲナイド化合物の製造方法
JP2015193513A (ja) * 2014-03-31 2015-11-05 旭化成株式会社 結晶成長促進剤及びそれを用いた金属カルコゲナイド化合物の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018016213A1 (fr) 2016-07-20 2018-01-25 ソニー株式会社 Film semi-conducteur, procédé de fabrication associé, élément de conversion photoélectrique, élément d'imagerie à semi-conducteurs et dispositif électronique

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JPH06140646A (ja) * 1992-07-14 1994-05-20 Canon Inc 光起電力素子
JPH0730138A (ja) * 1993-06-25 1995-01-31 Matsushita Electric Ind Co Ltd ＣｄＳ焼結膜の製造方法
JP2009146578A (ja) * 2007-12-11 2009-07-02 Noritake Co Ltd 太陽電池および太陽電池用アルミニウムペースト
JP2010129642A (ja) * 2008-11-26 2010-06-10 Kyocera Corp 薄膜太陽電池の製法

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JPH04127483A (ja) * 1990-06-21 1992-04-28 Fuji Electric Co Ltd ＣｕＩｎＳｅ↓２太陽電池の製造方法
JP3244408B2 (ja) * 1995-09-13 2002-01-07 松下電器産業株式会社 薄膜太陽電池及びその製造方法
JP2005117012A (ja) * 2003-09-17 2005-04-28 Matsushita Electric Ind Co Ltd 半導体膜とその製造方法、およびそれを用いた太陽電池とその製造方法
US7736940B2 (en) * 2004-03-15 2010-06-15 Solopower, Inc. Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication
JP4131965B2 (ja) * 2004-12-28 2008-08-13 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池の光吸収層の作製方法

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* Cited by examiner, † Cited by third party
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JPH06140646A (ja) * 1992-07-14 1994-05-20 Canon Inc 光起電力素子
JPH0730138A (ja) * 1993-06-25 1995-01-31 Matsushita Electric Ind Co Ltd ＣｄＳ焼結膜の製造方法
JP2009146578A (ja) * 2007-12-11 2009-07-02 Noritake Co Ltd 太陽電池および太陽電池用アルミニウムペースト
JP2010129642A (ja) * 2008-11-26 2010-06-10 Kyocera Corp 薄膜太陽電池の製法

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T.WADA ET AL.: "Fabrication of Cu(In,Ga)Se2 thin films by a combination of mechanochemical and screen-printing/sintering processes", PHYSICA STATUS SOLIDI(A), vol. 203, no. 11, 2006, pages 2593 - 2597, XP055154224, DOI: doi:10.1002/pssa.200669652 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013129537A1 (fr) * 2012-02-28 2013-09-06 Tdk株式会社 Cellule solaire à semiconducteur composé
JPWO2013129537A1 (ja) * 2012-02-28 2015-07-30 Tdk株式会社 化合物半導体太陽電池
WO2013180137A1 (fr) * 2012-05-30 2013-12-05 凸版印刷株式会社 Procédé de fabrication pour une couche mince semi-conductrice composée, et pile solaire dotée de ladite couche mince semi-conductrice composée
CN104350611A (zh) * 2012-05-30 2015-02-11 凸版印刷株式会社 化合物半导体薄膜的制作方法及具备该化合物半导体薄膜的太阳能电池
JPWO2013180137A1 (ja) * 2012-05-30 2016-01-21 凸版印刷株式会社 化合物半導体薄膜の作製方法およびその化合物半導体薄膜を備える太陽電池
JP2015107899A (ja) * 2013-12-05 2015-06-11 旭化成株式会社 結晶成長促進剤及びそれを用いたカルコゲナイド化合物の製造方法
JP2015193513A (ja) * 2014-03-31 2015-11-05 旭化成株式会社 結晶成長促進剤及びそれを用いた金属カルコゲナイド化合物の製造方法

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JPWO2011118203A1 (ja) 2013-07-04
TW201201373A (en) 2012-01-01

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