WO2011071178A1 - シリカガラスルツボ - Google Patents

シリカガラスルツボ Download PDF

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Publication number
WO2011071178A1
WO2011071178A1 PCT/JP2010/072363 JP2010072363W WO2011071178A1 WO 2011071178 A1 WO2011071178 A1 WO 2011071178A1 JP 2010072363 W JP2010072363 W JP 2010072363W WO 2011071178 A1 WO2011071178 A1 WO 2011071178A1
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WO
WIPO (PCT)
Prior art keywords
silica glass
glass crucible
reference point
crucible
silicon
Prior art date
Application number
PCT/JP2010/072363
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English (en)
French (fr)
Japanese (ja)
Inventor
俊明 須藤
岸　弘史
Original Assignee
ジャパンスーパークォーツ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ジャパンスーパークォーツ株式会社 filed Critical ジャパンスーパークォーツ株式会社
Priority to EP10836097.5A priority Critical patent/EP2385156B1/en
Priority to CN201080008270.7A priority patent/CN102325927B/zh
Priority to US13/148,463 priority patent/US9416463B2/en
Priority to KR1020117019518A priority patent/KR101398989B1/ko
Priority to JP2011545276A priority patent/JP5143292B2/ja
Publication of WO2011071178A1 publication Critical patent/WO2011071178A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
    • C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Definitions

  • the present invention relates to a silica glass crucible for pulling a silicon single crystal.
  • Silicon wafers are indispensable for the electronics technology that supports today's IT society and the production of semiconductor devices used there.
  • One of the features of this silicon wafer is microdefects such as oxygen precipitates, dislocations, and oxygen stacking faults. While these micro defects have the beneficial effect of capturing heavy metal contamination that occurs in the device process, they can also cause device failure. Therefore, the oxygen concentration in the crystal of the single crystal silicon needs to be adjusted to a predetermined concentration according to the type of device or the device process used.
  • CZ method a manufacturing method of pulling a single crystal of silicon called Czochralski method (hereinafter referred to as CZ method) is common.
  • CZ method Magneticfield-applied CZ method
  • MCZ method Magneticfield-applied CZ method
  • B Bipolar
  • P phosphorus
  • the silica glass crucible is for storing a silicon melt when melting polycrystalline silicon and pulling it up as single crystal silicon.
  • Silica glass is gradually dissolved in the silicon melt. Therefore, when pulling up the single crystal silicon, the silica glass crucible serves as a supply source of oxygen to the silicon wafer as described above, and at the same time, a supply source of trace amounts of impurities such as Fe, Al, and Na.
  • defects contained in silica glass are also dissolved and mixed in the silicon melt. Typical defects include bubbles of ⁇ 0.05 mm or more contained in silica glass and metal pieces such as iron.
  • silica glass fragments When pulling up single crystal silicon by the CZ method, if a bubble of ⁇ 0.05 mm or more is exposed or ruptured, silica glass fragments fall into the silicon melt. The silica glass fragments move by the thermal convection of the silicon melt and adhere to the silicon single crystal. In this case, since the silicon single crystal is polycrystallized, the yield of the single crystal is reduced. Moreover, the gas in the bubbles is also mixed into the silicon melt. When this gas component is taken into the silicon single crystal, it becomes a defect of the silicon single crystal. Impurities such as iron contained in silica glass break the O-Si-O bond in silica glass and transform it into a stable crystal ( ⁇ -cristobalite) at the temperature during silicon single crystal growth. Crystallize.
  • Patent Document 1 discloses that a detachable mark member is provided.
  • the above prior art has room for improvement in the following points.
  • the distance to the defect there is a relationship between the distance to the defect and the time of immersion in the silicon melt (that is, the amount of dissolution of the wall surface of the silica glass crucible). This is because the immersion time and the amount of dissolution differ depending on the location of the silica glass crucible.
  • the immersion time and the amount of dissolution tend to increase from the straight body portion to the bottom portion of the silica glass crucible.
  • the distance from the inner surface of the silica glass crucible to the defects can be managed if the information such as the height position and the distance from the inner surface is accurately grasped. It should be.
  • the conventional silica glass crucible has a problem that the distance from the inner surface of the silica glass crucible to the defect cannot be grasped, and determination of product shipment and solutions for various problems cannot be taken.
  • Patent Document 1 such a mark member is only used for alignment in each stage for each conveyance in the manufacturing process of the silica glass crucible.
  • a detachable mark member is used at the time of relative movement, and the mark member is removed before proceeding to the subsequent melting and bulk pulling steps of the raw material. Therefore, with such a detachable mark member, it is difficult to manage the distance from the inner surface of the silica glass crucible to the defect during the production of the silicon single crystal by the CZ method.
  • the present invention has been developed in view of the above-described situation, and the defect position in the crucible is quantified based on a certain standard, and when the single crystal silicon is pulled up, the defect position is determined based on the quantified defect position information.
  • An object of the present invention is to provide a silica glass crucible with a reference point capable of determining whether or not is a problem.
  • the gist configuration of the present invention is as follows.
  • a silica glass crucible comprising a cylindrical straight body having an edge opened on the upper surface, a mortar-shaped bottom, and a corner connecting the edges, the edge and the inner wall surface of the crucible
  • a silica glass crucible characterized in that a fixed reference point used for specifying a positional relationship with a predetermined part is provided in at least one of the outer wall surfaces.
  • the reference point of the inner wall surface and / or the outer wall surface is provided within a range from the edge portion and the edge portion of the straight body portion to 15 cm below, as described in (1) above Silica glass crucible.
  • the height position of the defect in the silica glass crucible and the distance from the inner surface can be accurately grasped.
  • the silica glass crucible according to the present invention is used for pulling up single crystal silicon, since the positional information of the defects is known in advance, the silica glass crucible is not melted so that the defects are not exposed. By providing an upper limit for the time of immersion in the liquid, generation of defective single crystal silicon can be suppressed.
  • Figure 1 shows a schematic diagram of the mold and crucible.
  • silica glass crucible 1 used in the present embodiment any conventionally known silica glass crucible 1 used in the CZ method or the like can be suitably used, but in particular, the diameter is likely to increase the occurrence of defects and the like. It can be suitably used with a large-diameter crucible of 800 mm or more.
  • a fixed reference point used for specifying a positional relationship with a predetermined portion can be provided on at least the outer wall surface of the silica glass crucible 1.
  • a predetermined portion such as a bubble generation position
  • the exact position of a defect or the like can be known three-dimensionally.
  • 1 is a silica glass crucible
  • 2 is a carbon mold
  • 3 is an opening edge of the crucible.
  • the edge 3 (including the end face) of the crucible shown in FIG. 1 and a portion within a range 15 cm below the edge are suitable as the fixed reference point application position in the present embodiment. .
  • a fixed reference point When a fixed reference point is applied to the outer wall surface of the silica glass crucible 1, for example, it can be applied by a mold 2 used when the silica glass crucible 1 is manufactured.
  • the mold 2 is a carbon container corresponding to a casting mold.
  • silica powder as a raw material of the silica glass crucible 1 is supplied to the wall of the mold 2 from above the wall of the mold 2 and filled in the entire wall of the carbon mold 2.
  • the silica glass crucible 1 is formed by setting the thickness to a predetermined value by centrifugal force generated by the rotation of the mold 2 and performing arc melting from the inside.
  • a recess and / or a protrusion for transfer marks is provided in advance in the carbon mold.
  • the recesses and / or protrusions can be provided by processing with a high-speed steel drill or the like.
  • a convex part for a transfer mark can be given to the mold by providing a concave part in the mold of a mold. In this way, the reference point transferred and applied from the mold can accurately grasp the positional relationship between the crucible and the molding mold. At this time, the number, position, etc. of the reference points can be appropriately selected and determined according to the usage state of the crucible.
  • size (height) of a convex part can be set in consideration of the layer thickness of the unmelted silica powder between a silica glass crucible and a carbon mold. Desirably, it is preferably about 2 to 15 mm. This is because the manufacturing process of the silica glass crucible is completed within the above range, and when the silica glass crucible is taken out from the mold, it can be smoothly taken out without breaking the silica glass crucible.
  • the shape of the reference point serving as the reference for the spatial coordinates can be selected from a circular shape or a linear concave or convex portion, and any reference point may be provided at a predetermined location.
  • a portion (not shown) called a rim end portion remains above the opening edge 3 of the crucible in FIG. Cut into a shape as shown in FIG. For this reason, when the reference point described above is provided in the vicinity of the rim end portion, it is necessary to take this into consideration. Further, there is no problem even if various shapes such as concave portions or convex portions are mixed.
  • FIG. 2 schematically shows a preferred state of the reference point.
  • FIG. 4A shows the reference points of the circular and linear concave portions
  • FIG. 4B shows the reference points of the circular and linear convex portions.
  • the diameter is a circle of about 0.5 to 10 mm and the depth is about 2 to 15 mm. This is because if the above lower limit values of the diameter and depth are deviated, the single crystal silicon may be lost in the pulling process, whereas if the upper limit value is deviated, it acts as a crucible defect. Because there is a fear.
  • the length is about 10 to 100 mm
  • the depth is about 2 to 15 mm
  • the width is about 0.5 to 10 mm
  • the location of the reference point B is the position of the crucible shown in FIG. A portion in the range from the edge (including the end face) to 15 cm below is preferable.
  • the reference point of the convex portion shown in FIG. 2 (b) is only in the opposite shape to that of FIG. 2, and the preferable range is the same as the concave portion.
  • a circle of about 10 mm and a depth of about 2 to 15 mm is suitable.
  • the length is about 10 to 100 mm
  • the depth is about 2 to 15 mm
  • the width is about 0.5 to 10 mm.
  • the place where these convex portions are provided is preferably a portion ranging from the edge (including the end portion) to 15 cm below the crucible shown in FIG. 1, as with the reference point of the concave portion.
  • the number of reference points according to the present invention is ensured by placing it on a surface plate having a recess that matches the bottom shape and securing its central axis.
  • Any one of the plurality of reference points A shown in FIG. In the case where the surface plate as described above is not used, it is desirable to provide two or more reference points A as shown in FIG. It is desirable to provide a reference point so that a (reference) plane is obtained in view of the applicability of the measurement method described below.
  • the datum plane described above means the datum plane described in JIS B B0022.
  • any conventionally known measuring machine can be used as the three-dimensional measuring machine.
  • the sensor of the three-dimensional measuring machine is aligned with the above-described plurality of reference points, and the datum plane determined in advance is aligned with the datum plane obtained from the plurality of reference points of the crucible by the least square method or the like. Just move and fix the position of the crucible.
  • any of an optical sensor, a laser probe, a touch probe, and the like can be suitably used as the sensor unit of the three-dimensional measuring machine.
  • the silica glass crucible can always be installed at the same position, and as a result, the same coordinates indicate the same position in any crucible. That is, the coordinate data can be exchanged between different processes such as the silica crucible inspection process and the silicon single crystal pulling process, and the silica glass is fused with silicon so that the defects are not exposed depending on the defect position of the silica glass crucible.
  • the time of immersion in the liquid it is possible to take measures such as changing the manufacturing conditions at the time of pulling up in advance.
  • Examples of the defect of the silica glass crucible referred to in the present invention include small metal pieces such as Fe and Al, and bubble defects. If there is such a bubble defect or the like, the silicon single crystal is polycrystallized when the silicon single crystal is pulled, so it is desirable to reduce it.
  • FIG. 3 schematically shows a case where a laser mark according to the present invention is provided.
  • 4 is a mold mark
  • 5 is a laser mark
  • 6 is a laser beam irradiation direction.
  • the reference point according to the present invention can be given not only to the outer wall surface of the silica glass crucible but also to the inner wall surface.
  • the carbon dioxide laser method is particularly advantageously adapted in view of accuracy of shape and position.
  • a reference point can be provided at the opening edge of the silica glass crucible, that is, the upper end surface of the crucible.
  • the defective part can be easily identified by providing the position directly above the defective part detected by the inspection.
  • the means for providing the reference point is not limited to the transfer mark or laser marking by the carbon mold described above, and any known silica such as drilling can be used as long as the reference point can be attached to the silica. A processing method performed on glass can be applied.
  • the shape of the reference point is the same as the shape given by the mold described above.
  • the diameter is about 0.5 to 10 mm
  • the depth is about 2 to 15 mm
  • the place to be provided is A portion in the range from the upper end (including the end) to 15 cm below the crucible shown in FIG.
  • the length is about 10 to 100 mm
  • the depth is about 2 to 15 mm
  • the width is about 0.5 to 10 mm
  • the installation location is the same as the circular reference point. A portion in the range from the upper end (including the end) to 15 cm below the crucible shown in FIG.
  • the laser device can use a three-dimensional control laser marker.
  • This laser device has a variable focal length if the height of the irradiation area is within a 42 mm range. It can be processed into a slope or a curved surface without fine adjustment of the distance to the irradiated object and the level.
  • the reference point processing procedure using a carbon dioxide laser is as follows: 1. A process of having a three-claw scroll chuck mechanism for centering the crucible and placing the crucible in a state where the opening of the crucible is on the bottom having a laser processing machine opening in the center, 2.3 crucible centering process with claw scroll chuck mechanism; 3. The process of raising and lowering the laser processing machine on the inner wall side of the crucible, 4. The process of adjusting the distance between the inner wall of the crucible and the laser irradiation port with a red semiconductor laser with a wavelength of 650 nm built in the laser device; 5. The process of providing a reference point with a laser; 6. A process in which a base plate with a servo control mechanism rotates and a second reference point is provided by a laser; 7. Consists of a process in which the laser processing machine returns to the home position.
  • the location where the reference point is provided is preferably a location ranging from the open end of the crucible (including the upper end surface) to 15 cm below. This is because when pulling up a silicon single crystal, the portion where the reference point is below the silicon melt is pressed against the carbon susceptor on the outside due to the weight of the silicon melt. In some cases, it may disappear. Further, when the reference point is on the inner surface below the silicon melt surface, the silica glass is dissolved in the silicon melt, so that the reference point may disappear.
  • the silica glass crucible with a reference point can estimate whether or not a defect occurs in the single crystal silicon when the single crystal silicon is pulled up.
  • the estimation procedure is possible by first grasping the height position of the defect and the distance from the inner surface, and comparing the pulling condition and the reduced thickness of the silica glass that can be calculated from the dipping time in that condition. Specifically, under the conditions of silicon melt temperature: 1500 ° C. and atmospheric pressure (Ar): 6.67 kPa, the dissolution rate of silica glass is about 15 ⁇ m / h, so from the dissolution rate and immersion time, The reduction thickness of the glass at the height where there is a defect can be calculated to some extent. If the calculated reduction thickness is compared with the distance from the inner surface of the defect, the possibility that the defect is exposed can be estimated.
  • Example 1 An 800 mm diameter silica glass crucible was provided with a reference point C by means of previously providing a convex portion on the inner wall of the carbon mold and a reference point D 0 by carbon dioxide laser processing. The result of providing the reference point is shown in each photograph of FIG. It can be seen from the figure that a reference point is provided. The reference point was 10 cm below the edge of the crucible and had a diameter of 5 mm.
  • Irradiation laser CO 2 laser (class 4)
  • Irradiation laser average output 30W
  • Irradiation laser oscillation wavelength band 10.6 ⁇ m
  • Irradiation method XYZ 3-axis simultaneous scanning method Processing space: 300 ⁇ 300 ⁇ 42mm
  • the position of occurrence of bubble defects having a diameter of 50 ⁇ m or more was confirmed by transmitting light (xenon lamp) and confirming scattering by bubbles, and the position was measured with a three-dimensional measuring machine.
  • a handy type non-contact shape measuring system was used as the three-dimensional measuring machine.
  • the reference point D 0 of the round hole processing by the carbon dioxide laser processing is used, but the reference point of other shape, the reference point applied to the end by the processing of the carbon dioxide laser, and the mold It has been confirmed that all of the reference points according to the present invention, such as a reference point provided by means for providing a convex portion in advance, have the same result as below.
  • the positioning procedure of the silica glass crucible in this test can use a datum plane as described above, but in this experiment, it was performed by means using the above-mentioned surface plate + reference point.
  • a silica glass crucible was fixed at a predetermined position using a surface plate + a reference point, and then the bubble defect position was measured using the above three-dimensional measuring machine. The measurement results are shown in FIG.
  • the ones where bubble defects are observed at the positions that affect the generation of defects in the silicon single crystal (crucible A)
  • the positions that affect the generation of defects in the silicon single crystal In the CZ furnace each of which no bubble defects were observed (Crucible B) was placed in the CZ furnace, and a polycrystalline silicon lump was placed in this and kept in an argon gas atmosphere (6.67 kPa), from room temperature (20 ° C) to 1500 ° C.
  • the temperature was raised in 10 hours, and this temperature was maintained for a predetermined time to melt the silicon mass and form a silicon melt.
  • a seed crystal was immersed in this silicon melt and gradually pulled up while rotating the crucible to grow a silicon single crystal.
  • the defect occurrence site of single crystal silicon was estimated. Based on the estimated information, the defect occurrence status when the estimated portion was actually cut out on the wafer was compared with the defect occurrence status of the wafers before and after that portion. The result is shown in FIG. Defect measurement at this time is performed by polishing the cut wafer with a mixed solution of chemical components having a chemical polishing action and particles having a mechanical polishing action, and measuring the number of defects with an LPD> 0.065 ⁇ m on the polished surface with a laser. Measured with an inspection machine. From the figure, it can be seen that the defect occurrence rate of the wafer at a specific part is higher than the defect occurrence state of the wafer at another part. That is, it can be seen that the occurrence of defects can be estimated very accurately.
  • single-crystal silicon was produced using the silica glass crucible B under the above-mentioned pulling conditions, the wafer was cut out, and the occurrence of defects in the wafer was confirmed by the above-described procedure. As a result, there was no particularly conspicuous defect occurrence site.
  • the present invention can accurately grasp the positional relationship between the crucible and the mold used therefor, it is useful for identifying the location of a defect occurring due to the crucible and investigating the cause of the occurrence.
  • various measures such as avoiding the use of the crucible can be taken based on positional information of defects, etc., and the occurrence of defects can be prevented. Contributes to improving the yield of ingots.

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  • Organic Chemistry (AREA)
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PCT/JP2010/072363 2009-12-11 2010-12-13 シリカガラスルツボ WO2011071178A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP10836097.5A EP2385156B1 (en) 2009-12-11 2010-12-13 Silica glass crucible
CN201080008270.7A CN102325927B (zh) 2009-12-11 2010-12-13 氧化硅玻璃坩埚
US13/148,463 US9416463B2 (en) 2009-12-11 2010-12-13 Vitreous silica crucible
KR1020117019518A KR101398989B1 (ko) 2009-12-11 2010-12-13 실리카 유리 도가니
JP2011545276A JP5143292B2 (ja) 2009-12-11 2010-12-13 シリカガラスルツボ

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Application Number Priority Date Filing Date Title
JP2009-282082 2009-12-11
JP2009282082 2009-12-11

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WO2011071178A1 true WO2011071178A1 (ja) 2011-06-16

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US (1) US9416463B2 (zh)
EP (1) EP2385156B1 (zh)
JP (1) JP5143292B2 (zh)
KR (1) KR101398989B1 (zh)
CN (1) CN102325927B (zh)
TW (1) TWI420002B (zh)
WO (1) WO2011071178A1 (zh)

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WO2013094318A1 (ja) * 2011-12-22 2013-06-27 ジャパンスーパークォーツ株式会社 シリカガラスルツボの評価方法、シリコン単結晶の製造方法
US20150205855A1 (en) * 2012-08-03 2015-07-23 Nec Corporation Product management method, product management device, product management system, and program
CN102794828B (zh) * 2012-08-27 2016-03-02 北京博宇半导体工艺器皿技术有限公司 制备筒状石墨加热器用固定棒及加热器的制造方法
KR101790718B1 (ko) * 2013-06-30 2017-10-26 가부시키가이샤 섬코 실리카 유리 도가니
TWI638916B (zh) * 2014-09-22 2018-10-21 Ｓｕｍｃｏ股份有限公司 石英玻璃坩堝之破壞檢查方法及是否良好之判定方法
JP7216591B2 (ja) 2019-03-26 2023-02-01 東京瓦斯株式会社 管理制御システム及び管理制御方法

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