WO2011052510A1 - 有機薄膜太陽電池及びその製造方法 - Google Patents
有機薄膜太陽電池及びその製造方法 Download PDFInfo
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- WO2011052510A1 WO2011052510A1 PCT/JP2010/068733 JP2010068733W WO2011052510A1 WO 2011052510 A1 WO2011052510 A1 WO 2011052510A1 JP 2010068733 W JP2010068733 W JP 2010068733W WO 2011052510 A1 WO2011052510 A1 WO 2011052510A1
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- electrode
- substrate
- insulating film
- solar cell
- organic thin
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- 239000010409 thin film Substances 0.000 title claims abstract description 100
- 238000000034 method Methods 0.000 title claims description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims abstract description 187
- 239000010408 film Substances 0.000 claims abstract description 146
- 238000007789 sealing Methods 0.000 claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 239000000956 alloy Substances 0.000 claims abstract description 29
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 26
- 239000003566 sealing material Substances 0.000 claims description 14
- 150000002484 inorganic compounds Chemical class 0.000 claims description 13
- 229910010272 inorganic material Inorganic materials 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 150000002894 organic compounds Chemical class 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 239000010935 stainless steel Substances 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- 230000006866 deterioration Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 222
- 230000032258 transport Effects 0.000 description 66
- 239000000463 material Substances 0.000 description 40
- 150000001875 compounds Chemical class 0.000 description 38
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 24
- 238000000576 coating method Methods 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 12
- 229910003472 fullerene Inorganic materials 0.000 description 12
- 239000002904 solvent Substances 0.000 description 12
- 230000005525 hole transport Effects 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- UUIQMZJEGPQKFD-UHFFFAOYSA-N Methyl butyrate Chemical compound CCCC(=O)OC UUIQMZJEGPQKFD-UHFFFAOYSA-N 0.000 description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 125000005842 heteroatom Chemical group 0.000 description 4
- 239000002346 layers by function Substances 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- -1 perfluoroalkyl vinyl ether Chemical compound 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000009719 polyimide resin Substances 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229920000767 polyaniline Polymers 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- 229920000123 polythiophene Polymers 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 3
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 3
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 2
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 2
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910001508 alkali metal halide Inorganic materials 0.000 description 2
- 229910001615 alkaline earth metal halide Inorganic materials 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- OCKPCBLVNKHBMX-UHFFFAOYSA-N butylbenzene Chemical compound CCCCC1=CC=CC=C1 OCKPCBLVNKHBMX-UHFFFAOYSA-N 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 229920006026 co-polymeric resin Polymers 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000007756 gravure coating Methods 0.000 description 2
- 238000007646 gravure printing Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920001955 polyphenylene ether Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- YTZKOQUCBOVLHL-UHFFFAOYSA-N tert-butylbenzene Chemical compound CC(C)(C)C1=CC=CC=C1 YTZKOQUCBOVLHL-UHFFFAOYSA-N 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- RELMFMZEBKVZJC-UHFFFAOYSA-N 1,2,3-trichlorobenzene Chemical compound ClC1=CC=CC(Cl)=C1Cl RELMFMZEBKVZJC-UHFFFAOYSA-N 0.000 description 1
- YMRMDGSNYHCUCL-UHFFFAOYSA-N 1,2-dichloro-1,1,2-trifluoroethane Chemical compound FC(Cl)C(F)(F)Cl YMRMDGSNYHCUCL-UHFFFAOYSA-N 0.000 description 1
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 1
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 1
- MPPPKRYCTPRNTB-UHFFFAOYSA-N 1-bromobutane Chemical compound CCCCBr MPPPKRYCTPRNTB-UHFFFAOYSA-N 0.000 description 1
- MNDIARAMWBIKFW-UHFFFAOYSA-N 1-bromohexane Chemical compound CCCCCCBr MNDIARAMWBIKFW-UHFFFAOYSA-N 0.000 description 1
- YZWKKMVJZFACSU-UHFFFAOYSA-N 1-bromopentane Chemical compound CCCCCBr YZWKKMVJZFACSU-UHFFFAOYSA-N 0.000 description 1
- VFWCMGCRMGJXDK-UHFFFAOYSA-N 1-chlorobutane Chemical compound CCCCCl VFWCMGCRMGJXDK-UHFFFAOYSA-N 0.000 description 1
- MLRVZFYXUZQSRU-UHFFFAOYSA-N 1-chlorohexane Chemical compound CCCCCCCl MLRVZFYXUZQSRU-UHFFFAOYSA-N 0.000 description 1
- SQCZQTSHSZLZIQ-UHFFFAOYSA-N 1-chloropentane Chemical compound CCCCCCl SQCZQTSHSZLZIQ-UHFFFAOYSA-N 0.000 description 1
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- VFBJMPNFKOMEEW-UHFFFAOYSA-N 2,3-diphenylbut-2-enedinitrile Chemical group C=1C=CC=CC=1C(C#N)=C(C#N)C1=CC=CC=C1 VFBJMPNFKOMEEW-UHFFFAOYSA-N 0.000 description 1
- DDTHMESPCBONDT-UHFFFAOYSA-N 4-(4-oxocyclohexa-2,5-dien-1-ylidene)cyclohexa-2,5-dien-1-one Chemical class C1=CC(=O)C=CC1=C1C=CC(=O)C=C1 DDTHMESPCBONDT-UHFFFAOYSA-N 0.000 description 1
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- AZSFNTBGCTUQFX-UHFFFAOYSA-N C12=C3C(C4=C5C=6C7=C8C9=C(C%10=6)C6=C%11C=%12C%13=C%14C%11=C9C9=C8C8=C%11C%15=C%16C=%17C(C=%18C%19=C4C7=C8C%15=%18)=C4C7=C8C%15=C%18C%20=C(C=%178)C%16=C8C%11=C9C%14=C8C%20=C%13C%18=C8C9=%12)=C%19C4=C2C7=C2C%15=C8C=4C2=C1C12C3=C5C%10=C3C6=C9C=4C32C1(CCCC(=O)OC)C1=CC=CC=C1 Chemical compound C12=C3C(C4=C5C=6C7=C8C9=C(C%10=6)C6=C%11C=%12C%13=C%14C%11=C9C9=C8C8=C%11C%15=C%16C=%17C(C=%18C%19=C4C7=C8C%15=%18)=C4C7=C8C%15=C%18C%20=C(C=%178)C%16=C8C%11=C9C%14=C8C%20=C%13C%18=C8C9=%12)=C%19C4=C2C7=C2C%15=C8C=4C2=C1C12C3=C5C%10=C3C6=C9C=4C32C1(CCCC(=O)OC)C1=CC=CC=C1 AZSFNTBGCTUQFX-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229920000292 Polyquinoline Polymers 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- ULGYAEQHFNJYML-UHFFFAOYSA-N [AlH3].[Ca] Chemical compound [AlH3].[Ca] ULGYAEQHFNJYML-UHFFFAOYSA-N 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- AQNQQHJNRPDOQV-UHFFFAOYSA-N bromocyclohexane Chemical compound BrC1CCCCC1 AQNQQHJNRPDOQV-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004148 curcumin Substances 0.000 description 1
- WVIIMZNLDWSIRH-UHFFFAOYSA-N cyclohexylcyclohexane Chemical group C1CCCCC1C1CCCCC1 WVIIMZNLDWSIRH-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229940117389 dichlorobenzene Drugs 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 150000008376 fluorenones Chemical class 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical compound FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 1
- 238000004770 highest occupied molecular orbital Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- LHJOPRPDWDXEIY-UHFFFAOYSA-N indium lithium Chemical compound [Li].[In] LHJOPRPDWDXEIY-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- GCICAPWZNUIIDV-UHFFFAOYSA-N lithium magnesium Chemical compound [Li].[Mg] GCICAPWZNUIIDV-UHFFFAOYSA-N 0.000 description 1
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 239000000113 methacrylic resin Substances 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- UNFUYWDGSFDHCW-UHFFFAOYSA-N monochlorocyclohexane Chemical compound ClC1CCCCC1 UNFUYWDGSFDHCW-UHFFFAOYSA-N 0.000 description 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical class C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 150000002987 phenanthrenes Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- ZJMWRROPUADPEA-UHFFFAOYSA-N sec-butylbenzene Chemical compound CCC(C)C1=CC=CC=C1 ZJMWRROPUADPEA-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to an organic thin film solar cell and a manufacturing method thereof.
- An organic thin film solar cell includes a pair of electrodes and an active layer sandwiched between the pair of electrodes.
- the transparent substrate on which light is incident and the other electrode facing the transparent electrode are often made of aluminum (Al) having excellent electrical characteristics such as a low work function and high electrical conductivity.
- Al electrode is used.
- the Al electrode is corroded by moisture, oxygen, etc. present in the external environment (atmosphere), and may deteriorate the electrical characteristics of the organic thin film solar cell such as the photoelectric conversion efficiency.
- the sealing layer is formed on the Al electrode, the heat dissipation performance is lowered, and thus the photoelectric conversion efficiency may be lowered.
- an organic electroluminescence element that includes an insulating layer made of germanium oxide on an Al electrode that is a cathode, and further includes a sealing layer in which the insulating layer is covered with an aluminum film (see Patent Document 1). .
- the heat dissipation is not sufficient in the organic thin film solar cell having the conventional configuration.
- an insulating layer is directly stacked on the Al electrode, and a metal film is further stacked on the insulating layer. Therefore, there are cases where the Al electrode and the metal film are electrically connected to each other at a defect portion inevitably generated in the insulating layer.
- the Al electrode and the metal film exposed to the external environment are electrically connected due to the defective portion of the insulating film, and the metal film exposed to the external environment is connected to the electrode through the defective portion of the insulating film. If it is connected, the electrode is likely to corrode (deteriorate) from the defective portion of the insulating film. As a result, not only the electrical characteristics of the element are impaired, but also the active layer deteriorates due to the deterioration of the electrode. As a result, the photoelectric conversion efficiency may decrease.
- this invention provides the following organic thin film solar cell and its manufacturing method.
- a pair of electrodes composed of a first electrode and a second electrode, an active layer sandwiched between the pair of electrodes, a thermal conductivity greater than 10 W / m ⁇ K, and 500 W / m ⁇ K
- An organic thin-film solar cell comprising a sealing layer sandwiched between electrodes.
- a pair of electrodes composed of a first electrode and a second electrode, an active layer sandwiched between the pair of electrodes, a thermal conductivity greater than 10 W / m ⁇ K, and 500 W / m ⁇ K
- Organic thin film solar cell [3] The organic thin film solar cell according to [1] or [2], wherein the metal is aluminum or copper.
- the insulating inorganic compound is an oxide, nitride, or carbide.
- the insulating inorganic compound includes any one selected from the group consisting of silicon, aluminum, and zirconium.
- the organic thin film solar cell according to [5], wherein the insulating organic compound is polyimide.
- a method of manufacturing an organic thin-film solar cell including a pair of electrodes including a first electrode and a second electrode, and an active layer sandwiched between the pair of electrodes, the substrate including a metal or an alloy, and the substrate
- a method of manufacturing an organic thin film solar cell comprising a pair of electrodes composed of a first electrode and a second electrode, an active layer sandwiched between the pair of electrodes, a substrate containing a metal or an alloy, and the substrate
- FIG. 1 is a schematic cross-sectional view showing a configuration of an insulating film laminated substrate.
- FIG. 2 is a schematic cross-sectional view showing a configuration example of the organic thin-film solar cell of the first embodiment.
- FIG. 3 is a schematic cross-sectional view showing a configuration example of the organic thin-film solar cell of the second embodiment.
- Insulating film laminated substrate 12 Substrate 14: Insulating film 20: Support substrate, sealing substrate 32: First electrode 34: Second electrode 42: First charge transport layer 44: Second charge transport layer 50: Active layer 60 : Sealing layer (sealing material, adhesive)
- the organic thin film solar cell of the present invention is provided with a pair of electrodes including a first electrode and a second electrode, an active layer sandwiched between the pair of electrodes, a substrate containing a metal or an alloy, and the substrate. And an insulating film laminated substrate having an insulating film.
- FIG. 1 is a schematic cross-sectional view showing a configuration of an insulating film laminated substrate.
- the insulating film laminated substrate 10 includes a substrate 12 and an insulating film 14 laminated on the substrate 12.
- the substrate 12 includes a metal or an alloy as a material, for example, a parallel plate-like substrate (thin film) having two main surfaces facing each other.
- the thermal conductivity at 300K (Kelvin) (hereinafter, the numerical values shown as “thermal conductivity” are all values at 300K) is larger than 10 W / m ⁇ K, A metal or alloy smaller than 500 W / m ⁇ K is used.
- the metal or alloy constituting the substrate 12 is more preferably a metal or alloy having a minimum thermal conductivity of 200 W / m ⁇ K, and particularly preferably a metal or alloy having a minimum of 400 W / m ⁇ K. An alloy is preferred.
- the metal material of the substrate 12 include aluminum (237 W / m ⁇ K), copper (402 W / m ⁇ K), silver (430 W / m ⁇ K), and gold (327 W / m ⁇ K).
- the alloy material of the substrate 12 is preferably exemplified by stainless steel. These metal materials and alloy materials each have a thermal conductivity at 300K that is 10 times or more higher than that of glass, which is a material often used as a substrate. Therefore, if these are used as the metal material and the alloy material, the heat generated inside the element can be efficiently conducted to the outside environment to dissipate it, and the element can be efficiently cooled.
- the insulating film 14 is generally made of an insulating inorganic compound or an insulating organic compound.
- the insulating inorganic compound an inorganic compound containing any element selected from the group consisting of silicon, aluminum, and zirconium is preferable.
- the insulating inorganic compound is preferably an oxide, nitride or carbide. Taking silicon as an example, the insulating inorganic compound that is an oxide includes SiO 2 , the insulating inorganic compound that is a nitride includes SiN, and the insulating inorganic compound that is a carbide includes SiC. Can be mentioned. Note that the insulating film 14 of the first embodiment does not require heat resistance because a high-temperature process such as a vapor deposition process is unnecessary after the formation of the sealing layer 60 (adhesion of the insulating film laminated substrate 10).
- Insulating organic compounds include polyimide resins such as polyimide resins and fluorinated polyimide resins, tetrafluoroethylene resins, tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer resins, tetrafluoroethylene / hexafluoropropylene.
- a copolymer resin, a vinylidene fluoride resin, a fluorinated resin such as a trifluoroethylene chloride resin, a vinyl fluoride resin, a modified polyphenylene ether, an allylated polyphenylene ether, or the like can be used.
- a polyimide resin having high heat resistance and electrical insulation is preferable.
- FIG. 2 is a schematic cross-sectional view showing a configuration example of the organic thin-film solar cell of the first embodiment.
- the organic thin film solar cell of the first embodiment is a configuration example in which the insulating film laminated substrate 10 is a sealing substrate. As shown in FIG.
- the organic thin film solar cell includes a pair of electrodes including a first electrode 32 and a second electrode 34, an active layer 50 sandwiched between the pair of electrodes, and a thermal conductivity of 10 W / m ⁇ Insulating film laminated substrate 10 provided with substrate 12 containing a metal or an alloy larger than K and smaller than 500 W / m ⁇ K, and insulating film 14 provided on the substrate, and insulating film of insulating film laminated substrate 10 14 and a sealing layer 60 sandwiched between any one of the pair of electrodes.
- At least one of the electrodes on which light is incident that is, at least one of the electrodes is a transparent or translucent electrode capable of transmitting incident light (sunlight) having a required wavelength.
- the polarities of the first electrode 32 and the second electrode 34 may be any suitable polarity corresponding to the element structure, and the first electrode 32 may be a cathode and the second electrode 34 may be an anode.
- the transparent or translucent electrode examples include a conductive metal oxide film and a translucent metal thin film.
- a film formed using a conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) which is a composite of indium oxide, zinc oxide, tin oxide, or NESA, NESA
- ITO indium tin oxide
- IZO indium zinc oxide
- a film made of gold, platinum, silver, copper or the like is used, and a film formed using ITO, IZO, or tin oxide is preferable.
- the method for producing the electrode include a vacuum deposition method, a sputtering method, an ion plating method, a plating method, and the like.
- a metal, a conductive polymer, or the like can be used as the electrode material for the opaque electrode.
- Specific examples include metals such as lithium, sodium, potassium, rubidium, cesium, magnesium, calcium, strontium, barium, aluminum, scandium, vanadium, zinc, yttrium, indium, cerium, samarium, europium, terbium, ytterbium, and the like.
- the alloy include magnesium-silver alloy, magnesium-indium alloy, magnesium-aluminum alloy, indium-silver alloy, lithium-aluminum alloy, lithium-magnesium alloy, lithium-indium alloy, and calcium-aluminum alloy.
- An organic thin film solar cell is usually formed on a substrate. That is, the stacked structure including the first electrode 32, the active layer 50, and the second electrode 34 is provided on the main surface of the support substrate 20.
- the material of the support substrate 20 may be any material that does not change chemically when forming an electrode and forming a layer containing an organic compound. Examples of the material of the support substrate 20 include glass, plastic, a polymer film, and silicon.
- the insulating film laminated substrate 10 is usually opaque. Therefore, the support substrate 20 disposed opposite to the insulating film laminated substrate 10 with the active layer 50 interposed therebetween is usually a transparent substrate.
- the insulating film laminated substrate 10 can be transparent, an opaque substrate can be used as the support substrate 20.
- the active layer 50 is sandwiched between the first electrode 32 and the second electrode 34.
- the active layer 50 of the first embodiment is a bulk hetero (junction) type organic layer (functional layer) containing a mixture of an electron-accepting compound (n-type semiconductor) and an electron-donating compound (p-type semiconductor). It is.
- the active layer 50 is a layer that has an essential function for the photoelectric conversion function and can generate charges (holes and electrons) using the energy of incident light.
- the active layer 50 included in the organic thin film solar cell includes an electron donating compound and an electron accepting compound as described above. Note that the electron-donating compound and the electron-accepting compound are determined relatively from the energy levels of these compounds, and one compound can be either an electron-donating compound or an electron-accepting compound.
- Examples of the electron donating compound include pyrazoline derivatives, arylamine derivatives, stilbene derivatives, triphenyldiamine derivatives, oligothiophene and derivatives thereof, polyvinylcarbazole and derivatives thereof, polysilane and derivatives thereof, and aromatic amines in side chains or main chains. And polysiloxane derivatives, polyaniline and derivatives thereof, polythiophene and derivatives thereof, polypyrrole and derivatives thereof, polyphenylene vinylene and derivatives thereof, and polythienylene vinylene and derivatives thereof.
- electron accepting compounds include oxadiazole derivatives, anthraquinodimethane and derivatives thereof, benzoquinone and derivatives thereof, naphthoquinone and derivatives thereof, anthraquinone and derivatives thereof, tetracyanoanthraquinodimethane and derivatives thereof, fluorenone derivatives, diphenyl dicyanoethylene and derivatives thereof, diphenoquinone derivatives, metal complexes of 8-hydroxyquinoline and its derivatives, polyquinoline and its derivatives, polyquinoxaline and its derivatives, polyfluorene and its derivatives, fullerenes and derivatives thereof such as C 60 fullerene, bathocuproine etc.
- Phenanthrene derivatives metal oxides such as titanium oxide, carbon nanotubes, and the like.
- titanium oxide, carbon nanotubes, fullerenes, and fullerene derivatives are preferable, and fullerenes and fullerene derivatives are particularly preferable.
- fullerene examples include C 60 fullerene, C 70 fullerene, C 76 fullerene, C 78 fullerene, such as C 84 fullerene, and the like.
- fullerene derivatives include derivatives of C 60 fullerene, C 70 fullerene, C 76 fullerene, C 78 fullerene, and C 84 fullerene.
- Examples of the specific structure of the fullerene derivative include the following structures.
- fullerene derivatives include [6,6] phenyl-C 61 butyric acid methyl ester (C 60 PCBM, [6,6] -Phenyl C 61 butyric acid methyl ester), and [6,6] phenyl-C 71 butyric acid.
- Methyl ester (C 70 PCBM, [6,6] -Phenyl C 71 butyric acid methyl ester), [6,6] Phenyl-C 85 butyric acid methyl ester (C 84 PCBM, [6,6] -Phenyl C 85 butyric acid methyl ester), and the like [6,6] thienyl -C 61 butyric acid methyl ester ([6,6] -Thienyl C 61 butyric acid methyl ester).
- the ratio of the fullerene derivative is preferably 10 parts by weight to 1000 parts by weight with respect to 100 parts by weight of the electron donating compound, and 20 parts by weight to 500 parts by weight. It is more preferable that
- the thickness of the active layer 50 is usually preferably 1 nm to 100 ⁇ m, more preferably 2 nm to 1000 nm, still more preferably 5 nm to 500 nm, and particularly preferably 20 nm to 200 nm.
- the active layer 50 includes a plurality of layers.
- a heterojunction type in which an electron-accepting layer containing an electron-accepting compound such as a fullerene derivative and an electron-donating layer containing an electron-donating compound such as P3HT may be joined.
- the ratio of the electron accepting compound in the bulk hetero type active layer containing the electron accepting compound and the electron donating compound is preferably 10 parts by weight to 1000 parts by weight with respect to 100 parts by weight of the electron donating compound. More preferred is 50 to 500 parts by weight.
- the organic thin film solar cell has an additional intermediate layer other than the active layer as a means for improving the photoelectric conversion efficiency between at least one of the first electrode 32 and the second electrode 34 and the active layer 50.
- additional intermediate layer examples include alkali metal and alkaline earth metal halides such as lithium fluoride, alkali metal and alkaline earth metal oxides, and the like.
- material used as the additional intermediate layer include fine particles of inorganic semiconductor such as titanium oxide, PEDOT (poly-3,4-ethylenedioxythiophene), and the like.
- Examples of the additional layer include a charge transport layer (hole transport layer, electron transport layer) that transports holes or electrons.
- any suitable material can be used as the material constituting the charge transport layer.
- the charge transport layer is an electron transport layer
- 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) is exemplified as an example of the material.
- BCP 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline
- PEDOT is used as a material.
- An additional intermediate layer that may be provided between the first electrode 32 and the second electrode 34 and the active layer 50 may be a buffer layer.
- materials used as the buffer layer include fluorination.
- examples thereof include alkali metal and alkaline earth metal halides such as lithium and oxides such as titanium oxide.
- an inorganic semiconductor it can be used in the form of fine particles.
- an example of the layer structure which an organic thin film solar cell can take is shown below.
- a) Anode / active layer / cathode b) Anode / hole transport layer / active layer / cathode c) Anode / active layer / electron transport layer / cathode d) Anode / hole transport layer / active layer / electron transport layer / cathode e) Anode / electron supply layer / electron acceptor layer / cathode f) Anode / hole transport layer / electron supply layer / electron acceptor layer / cathode g) Anode / electron supply layer / electron acceptor layer / electron Transport layer / cathode h) anode / hole transport layer / electron supply layer / electron-accepting layer / electron transport layer / cathode (where the symbol “/” is adjacent to the layer sandwiching the symbol “/”) Indicates that they are stacked.)
- the layer configuration may be any of a form in which the anode is provided on the side closer to the substrate and a form in which the cathode is provided on the side closer to the substrate.
- Each of the above layers may be formed as a single layer or a laminate of two or more layers.
- a first electrode 32 is provided on the main surface of the support substrate 20.
- a first charge transport layer 42 is provided on the first electrode 32.
- the first charge transport layer 42 is a hole transport layer when the first electrode 32 is an anode, and is an electron transport layer when the first electrode 32 is a cathode.
- the active layer 50 is provided on the first charge transport layer 42.
- a second charge transport layer 44 is provided on the active layer 50.
- the second charge transport layer 44 is an electron transport layer when the first electrode 32 is an anode, and is a hole transport layer when the first electrode 32 is a cathode.
- the second electrode 34 is provided on the second charge transport layer 44.
- a sealing layer 60 is provided on the second electrode 34.
- the insulating film laminated substrate 10 is bonded by the sealing layer 60.
- the insulating layer laminated substrate 10 is bonded so that the insulating film 14 is bonded to the second electrode 34 by the sealing layer 60 and the substrate 12 is exposed to the external environment.
- the sealing layer 60 is sandwiched between the insulating film 14 of the insulating film laminated substrate 10 and one of the pair of electrodes.
- “one of the electrodes” is the second electrode 34.
- the sealing layer 60 can be formed using any conventionally known suitable material in consideration of adhesiveness, heat resistance, barrier properties against moisture, oxygen, and the like. Examples of the material of the sealing layer 60 include an encapsulant and an adhesive made of an epoxy resin, a silicone resin, an acrylic resin, and a methacrylic resin.
- the organic thin film solar cell of the first embodiment since the insulating film laminated substrate composed of a material excellent in thermal conductivity and heat dissipation is provided, an increase in temperature of the organic thin film solar cell can be suppressed. Therefore, the deterioration of the characteristics of the organic thin film solar cell due to the temperature rise of the organic thin film solar cell can be effectively suppressed.
- a sealing layer is provided on the second electrode, and the insulating film laminated substrate and the second electrode are joined by this sealing layer. Therefore, according to this structure, the defect location inevitably generated in the insulating layer is protected by the sealing layer. Therefore, since the electrode and the substrate of the insulating film laminated substrate do not conduct, deterioration of the organic thin film solar cell due to moisture, oxygen, etc. existing in the external environment can be effectively suppressed.
- the manufacturing method of an organic thin film solar cell is demonstrated with reference to FIG.
- the manufacturing method of the organic thin film solar cell of 1st Embodiment is a manufacturing method of an organic thin film solar cell provided with the active layer 50 clamped between a pair of electrode which consists of the 1st electrode 32 and the 2nd electrode 34, and a pair of electrode.
- the insulating film laminated substrate 10 is prepared.
- An insulating film 14 is formed on one main surface of the substrate 12 to form the insulating film laminated substrate 10.
- the insulating film 14 can be formed by any suitable method according to the material such as application of material and thermal oxidation.
- the support substrate 20 is prepared.
- the support substrate 20 is a flat substrate having two main surfaces facing each other.
- a substrate in which a thin film of a conductive material that can be an electrode material such as indium tin oxide is provided on one main surface of the support substrate 20 in advance may be prepared.
- a thin film of conductive material is formed on one main surface of the support substrate 20 by any suitable method.
- the conductive material thin film is then patterned.
- the first electrode 32 is formed by patterning a thin film of a conductive material by any suitable method such as a photolithography process and an etching process.
- the first charge transport layer 42 is formed on the support substrate 20 on which the first electrode 32 is formed by any suitable method depending on the material.
- the active layer 50 is formed on the first charge transport layer 42 according to a conventional method.
- the active layer 50 can be formed by a coating method such as a spin coating method in which a coating liquid in which a solvent and any suitable active layer material are mixed is applied.
- the second charge transport layer 44 covering the active layer 50 is formed by any suitable method according to the material.
- the second electrode 34 is formed on the second charge transport layer 44.
- the second electrode 34 can be formed, for example, by a film forming method using a coating liquid, that is, a solution.
- the second electrode 34 may be formed by any conventionally known method such as vapor deposition.
- the first charge transport layer 42, the active layer 50, the second charge transport layer 44, and the second electrode 34 use a coating liquid, that is, a solution.
- a coating liquid that is, a solution.
- it can be formed by drying under conditions suitable for the material and the solvent.
- Film formation methods include spin coating, casting, micro gravure coating, gravure coating, bar coating, roll coating, wire bar coating, dip coating, spray coating, screen printing, and gravure printing.
- Application methods such as flexographic printing method, offset printing method, inkjet printing method, dispenser printing method, nozzle coating method, capillary coating method, spin coating method, flexographic printing method, gravure printing method, inkjet printing method, Dispenser printing is preferred.
- the solvent used in the film forming method using these solutions is not particularly limited as long as the solvent can dissolve the material.
- solvents examples include toluene, xylene, mesitylene, tetralin, decalin, bicyclohexyl, unsaturated hydrocarbon solvents such as butylbenzene, sec-butylbenzene, tert-butylbenzene, carbon tetrachloride, chloroform, dichloromethane, Halogenated saturated hydrocarbon solvents such as dichloroethane, chlorobutane, bromobutane, chloropentane, bromopentane, chlorohexane, bromohexane, chlorocyclohexane and bromocyclohexane, halogenated unsaturated hydrocarbon solvents such as chlorobenzene, dichlorobenzene and trichlorobenzene, tetrahydrofuran And ether solvents such as tetrahydropyran.
- unsaturated hydrocarbon solvents such as butylbenzene, sec-butylbenzen
- the layer formed by coating can be completed as a functional layer having a predetermined function by drying under conditions suitable for the material and the solvent in any suitable atmosphere such as a nitrogen gas atmosphere.
- the second electrode 34 and the insulating film laminated substrate 10 are joined.
- the insulating film 14 of the insulating film laminated substrate 10 and the second electrode 34 are bonded by a sealing material (adhesive) such as an epoxy resin, and sandwiched between the second electrode 34 and the insulating film 14. This is performed by forming the sealing layer 60.
- a sealing material is supplied onto the exposed surface of the second electrode 34 and / or the exposed surface of the insulating film 14, the second electrode 34 and the insulating film laminated substrate 10 are bonded together, and pressurization and heating are performed.
- An organic thin film solar cell can be manufactured by performing the above process.
- FIG. 3 is a schematic cross-sectional view showing a configuration example of the organic thin-film solar cell of the second embodiment.
- the organic thin-film solar cell of the second embodiment is a configuration example in which an insulating film laminated substrate 10 including a substrate 12 and an insulating film 14 laminated on the substrate 12 is used as a support substrate.
- the insulating film of the second embodiment 14 is required to have heat resistance.
- the organic thin-film solar cell includes a pair of electrodes including a first electrode 32 and a second electrode 34, and an active layer 50 sandwiched between the pair of electrodes.
- At least one of the electrodes on which light is incident that is, at least one of the electrodes is a transparent or translucent electrode capable of transmitting incident light (sunlight) having a required wavelength.
- the polarities of the first electrode 32 and the second electrode 34 may be any suitable polarity corresponding to the element structure, and the first electrode 32 may be a cathode and the second electrode 34 may be an anode.
- Organic thin-film solar cells are usually formed on a substrate. That is, the laminated structure including the first electrode 32, the active layer 50, and the second electrode 34 is provided on the insulating film laminated substrate 10 including the substrate 12 and the insulating film 14 laminated on the substrate 12. .
- the insulating film laminated substrate 10 is usually opaque. Therefore, the sealing substrate 20 disposed to face the insulating film laminated substrate 10 and the active layer 50 is usually a transparent substrate.
- the material of the sealing substrate 20 may be any material that does not change chemically when forming an electrode and forming a layer containing an organic compound. Examples of the material of the sealing substrate 20 include glass, plastic, polymer film, silicon, and the like.
- an opaque substrate can be used as the sealing substrate 20.
- the active layer 50 is sandwiched between the first electrode 32 and the second electrode 34.
- the active layer 50 of the second embodiment is a bulk hetero-type organic layer (functional layer) containing a mixture of an electron-accepting compound (n-type semiconductor) and an electron-donating compound (p-type semiconductor).
- the active layer 50 included in the photoelectric conversion element 10 contains an electron donating compound and an electron accepting compound as described above.
- the active layer 50 includes a plurality of layers.
- a heterojunction type in which an electron-accepting layer containing an electron-accepting compound such as a fullerene derivative and an electron-donating layer containing an electron-donating compound such as P3HT may be joined.
- the organic thin film solar cell has an additional intermediate layer other than the active layer as a means for improving the photoelectric conversion efficiency between at least one of the first electrode 32 and the second electrode 34 and the active layer 50. May be provided.
- Examples of the additional layer include a charge transport layer (hole transport layer, electron transport layer) that transports holes or electrons.
- a first electrode 32 is provided on the insulating film 14 of the insulating film laminated substrate 10.
- the organic thin film solar cell includes the insulating film laminated substrate 10 provided in contact with the first electrode 32 in this configuration example, in which the insulating film 14 is one of a pair of electrodes.
- a first charge transport layer 42 is provided on the first electrode 32.
- the first charge transport layer 42 is a hole transport layer when the first electrode 32 is an anode, and is an electron transport layer when the first electrode 32 is a cathode.
- the active layer 50 is provided on the first charge transport layer 42.
- a second charge transport layer 44 is provided on the active layer 50.
- the second charge transport layer 44 is an electron transport layer when the first electrode 32 is an anode, and is a hole transport layer when the first electrode 32 is a cathode.
- the second electrode 34 is provided on the second charge transport layer 44.
- a sealing layer 60 is provided on the second electrode 34. With the sealing layer 60, the sealing substrate 20 is bonded to the exposed surface of the second electrode 34.
- the sealing layer 60 may be formed on the entire surface of the second electrode 34 or may be formed in a partial region that is a part of the surface of the second electrode 34.
- the material of the substrate 20 may be any material that does not change chemically when forming an electrode and forming a layer containing an organic compound.
- Examples of the material of the substrate 20 include glass, plastic, polymer film, silicon, and the like.
- One main surface of the substrate 20 is bonded to the second electrode 34 by the sealing layer 60, and the other main surface is bonded to be exposed to the external environment.
- the sealing layer 60 can be formed using any conventionally known suitable material in consideration of adhesiveness, heat resistance, barrier properties against moisture, oxygen, and the like.
- a material of the sealing layer 60 for example, a sealing material or an adhesive material made of an epoxy resin may be used.
- the organic thin film solar cell of the second embodiment since the substrate composed of a material excellent in thermal conductivity and heat dissipation is provided, an increase in temperature of the organic thin film solar cell can be suppressed. Therefore, the deterioration of the characteristics of the organic thin film solar cell due to the temperature rise of the organic thin film solar cell can be effectively suppressed.
- the manufacturing method of an organic thin film solar cell is demonstrated with reference to FIG.
- the manufacturing method of the organic thin film solar cell of 2nd Embodiment is a manufacturing method of an organic thin film solar cell provided with the active layer 50 clamped between a pair of electrode which consists of the 1st electrode 32 and the 2nd electrode 34, and a pair of electrode.
- the step of preparing the insulating film laminated substrate 10 including the substrate 12 containing a metal or an alloy and the insulating film 14 formed on the substrate 12, and the first electrode 32 on the insulating film 14 of the insulating film laminated substrate 10.
- Forming the first charge transport layer 42 on the insulating film laminated substrate 10 on which the first electrode 32 is formed, and forming the active layer 50 on the first charge transport layer 42 A step of forming the second charge transport layer 44 on the active layer 50, a step of forming the second electrode 34 on the second charge transport layer 44, and the second electrode 34 and the sealing substrate 20.
- the second electrode 34 and the sealing substrate 20 are joined by a sealing material. And forming a Mareta sealing layer 60.
- the insulating film laminated substrate 10 is prepared.
- An insulating film 14 is formed on one main surface of the substrate 12 to form the insulating film laminated substrate 10.
- the insulating film 14 may be formed by any suitable method depending on the material such as application of material and thermal oxidation.
- the first electrode 32 is formed on the insulating film 14 of the insulating film laminated substrate 10.
- the first electrode 32 is formed, for example, by forming a thin film of a conductive material on the insulating film 14 by any suitable method, and patterning the thin film of the conductive material by any suitable method such as a photolithography process and an etching process. May be.
- the first charge transport layer 42 is formed on the entire surface of the substrate 20 on which the first electrode 32 is formed by any suitable method according to the material.
- the active layer 50 is formed on the first charge transport layer 42 according to a conventional method.
- the active layer 50 may be formed by a coating method such as a spin coating method in which a coating liquid in which a solvent and any suitable active layer material are mixed is applied.
- the second charge transport layer 44 covering the active layer 50 is formed by any suitable method according to the material.
- the second electrode 34 is formed on the second charge transport layer 44.
- the second electrode 34 may be formed by a film forming method using a coating liquid, that is, a solution.
- the second electrode 34 may be formed by any conventionally known method such as vapor deposition.
- the first charge transport layer 42, the active layer 50, the second charge transport layer 44, and the second electrode 34 use a coating liquid, that is, a solution.
- the film may be formed by drying under conditions suitable for the material and the solvent under any suitable atmosphere.
- the second electrode 34 and the sealing substrate 20 are joined.
- the sealing substrate 20 and the second electrode 34 are bonded by a sealing material (adhesive) such as an epoxy resin, and the sealing layer sandwiched between the second electrode 34 and the sealing substrate 20. This is done by forming 60.
- a sealing material is supplied to one main surface of the substrate 20 and / or the exposed surface of the insulating film 14, the second electrode 34 and the substrate 20 are bonded together, and selection such as pressurization and heating is performed. You may implement by performing the arbitrary suitable hardening process to the made sealing material.
- An organic thin film solar cell can be manufactured by performing the above process.
- a stacked structure including a first charge transport layer, an active layer, a second charge transport layer, and a second electrode is formed on an insulating film stacked substrate.
- An insulating film laminated substrate usually has higher heat resistance than a member such as a resin film used as a substrate. Therefore, if an insulating film laminated substrate is used as a supporting substrate, a higher temperature film formation process can be applied. Therefore, materials for functional layers such as electrodes, charge transport layers, and active layers formed on the insulating film laminated substrate The range of choices expands. Therefore, further improvement in performance of the organic thin film solar cell can be pursued and realized.
- the organic thin-film solar cell manufactured by the manufacturing method of the present invention allows light such as sunlight to enter the element through the first electrode and / or the second electrode, which are transparent or translucent electrodes, When a photovoltaic force is generated between the electrodes, it can be operated as a solar cell. It can also be used as an organic thin film solar cell module by integrating a plurality of organic thin film solar cells.
- Example 1 A stainless steel (SUS304) substrate is prepared, degreased with acetone, and then coated with polysilazane (manufactured by AZ Electronics, trade name: Aquamica (NL120A-20)) on one main surface. Next, a heat treatment was performed at 120 ° C. for 30 minutes to obtain an insulating film laminated substrate in which an insulating film (silicon oxide film) was formed on the substrate.
- SUS304 stainless steel
- a glass substrate (first substrate) on which an ITO film having a thickness of 150 nm is formed by sputtering is washed with acetone, and then an ultraviolet ozone irradiation apparatus equipped with a low-pressure mercury lamp (manufactured by Technovision, model: UV-312) was used for UV ozone cleaning treatment for 15 minutes to prepare an ITO electrode (first electrode) having a clean surface.
- an ultraviolet ozone irradiation apparatus equipped with a low-pressure mercury lamp manufactured by Technovision, model: UV-312
- PEDOT trade name Baytron P AI4083, lot. HCD07O109
- first charge transporting layer first charge transporting layer
- P3HT Poly (3-hexylthiophene)
- a coating solution was applied onto the PEDOT layer by a spin coating method, and an active layer was formed by heat treatment at 150 ° C. for 3 minutes in a nitrogen gas atmosphere.
- the film thickness of the active layer after the heat treatment was about 100 nm.
- a LiF layer (second charge transport layer) was deposited in a thickness of 2 nm and an Al layer (second electrode) was deposited in this order in a thickness of 70 nm by a vacuum deposition apparatus.
- the degree of vacuum during the deposition was 1 to 9 ⁇ 10 ⁇ 4 Pa in all cases .
- an insulating film laminated substrate is fixed (bonded) with the sealing layer while forming a sealing layer on the Al layer using an adhesive (sealing material) made of epoxy resin in a nitrogen gas atmosphere.
- an adhesive adhesive made of epoxy resin in a nitrogen gas atmosphere.
- Example 2 An organic thin film solar cell was produced in the same manner as in Example 1 except that a copper substrate was used instead of the stainless steel substrate.
- the present invention is useful because it provides an organic thin film solar cell.
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- Photovoltaic Devices (AREA)
Abstract
Description
〔1〕 第1電極及び第2電極からなる一対の電極と、前記一対の電極間に挟持される活性層と、熱伝導率が10W/m・Kよりも大きく、かつ500W/m・Kよりも小さい金属又は合金を含む基板、及び該基板上に設けられた絶縁膜を備えた絶縁膜積層基板と、前記絶縁膜積層基板の前記絶縁膜、及び前記一対の電極のうちのいずれか一方の電極の間に挟まれた封止層とを備える、有機薄膜太陽電池。
〔2〕 第1電極及び第2電極からなる一対の電極と、前記一対の電極間に挟持される活性層と、熱伝導率が10W/m・Kよりも大きく、かつ500W/m・Kよりも小さい金属又は合金を含む基板、及び該基板上に設けられた絶縁膜を備え、該絶縁膜が前記一対の電極のうちのいずれか一方に接して設けられた絶縁膜積層基板とを備える、有機薄膜太陽電池。
〔3〕 金属がアルミニウム又は銅である、〔1〕又は〔2〕に記載の有機薄膜太陽電池。
〔4〕 合金がステンレス鋼である、〔1〕又は〔2〕に記載の有機薄膜太陽電池。
〔5〕 絶縁膜が、絶縁性無機化合物又は絶縁性有機化合物からなる、〔1〕~〔4〕のいずれか一項に記載の有機薄膜太陽電池。
〔6〕 絶縁性無機化合物が、酸化物、窒化物又は炭化物である、〔5〕に記載の有機薄膜太陽電池。
〔7〕 絶縁性無機化合物が、ケイ素、アルミニウム及びジルコニウムからなる群から選ばれるいずれかを含む、〔5〕又は〔6〕に記載の有機薄膜太陽電池。
〔8〕 絶縁性有機化合物がポリイミドである、〔5〕に記載の有機薄膜太陽電池。
〔9〕 絶縁膜積層基板が支持基板である、〔1〕~〔8〕のいずれか一項に記載の有機薄膜太陽電池。
〔10〕 絶縁膜積層基板が封止基板であって、前記絶縁膜が前記一対の電極のうちいずれか一方の電極に封止層により接合される、〔1〕~〔8〕のいずれか一項に記載の有機薄膜太陽電池。
〔11〕 第1電極及び第2電極からなる一対の電極、該一対の電極間に挟持される活性層を備える有機薄膜太陽電池の製造方法であって、金属又は合金を含む基板、及び該基板に形成された絶縁膜を備える絶縁膜積層基板を準備する工程と、支持基板上に第1電極を形成する工程と、第1電極が形成された基板上に、第1電荷輸送層を形成する工程と、第1電荷輸送層上に、活性層を形成する工程と、活性層上に、第2電荷輸送層を形成する工程と、第2電荷輸送層上に、第2電極を形成する工程と、第2電極と絶縁膜積層基板の絶縁膜とを封止材により接合して、第2電極と絶縁膜とに挟まれた封止層を形成する工程とを含む、有機薄膜太陽電池の製造方法。
〔12〕 第1電極及び第2電極からなる一対の電極、該一対の電極間に挟持される活性層を備える有機薄膜太陽電池の製造方法であって、金属又は合金を含む基板、及び該基板に形成された絶縁膜を備える絶縁膜積層基板を準備する工程と、絶縁膜積層基板の絶縁膜上に第1電極を形成する工程と、第1電極が形成された絶縁膜積層基板上に、第1電荷輸送層を形成する工程と、第1電荷輸送層上に、活性層を形成する工程と、活性層上に、第2電荷輸送層を形成する工程と、第2電荷輸送層上に、第2電極を形成する工程と、第2電極と封止基板とを封止材により接合して、該第2電極と該封止基板とに挟まれた封止層を形成する工程とを含む、有機薄膜太陽電池の製造方法。
12:基板
14:絶縁膜
20:支持基板、封止基板
32:第1電極
34:第2電極
42:第1電荷輸送層
44:第2電荷輸送層
50:活性層
60:封止層(封止材、接着材)
基板12を構成する金属又は合金としては、より好ましくは熱伝導率が最小でも200W/m・Kである金属又は合金とするのがよく、特に好ましくは最小でも400W/m・Kである金属又は合金とするのがよい。
なお第1の実施形態の絶縁膜14には、封止層60の形成(絶縁膜積層基板10の接着)後に蒸着工程のような高温プロセスが不要であるため、耐熱性は不要である。
<有機薄膜太陽電池>
図2を参照して、第1の実施形態の有機薄膜太陽電池の構成について説明する。図2は、第1の実施形態の有機薄膜太陽電池の構成例を示す概略的な断面図である。
第1の実施形態の有機薄膜太陽電池は、絶縁膜積層基板10を、封止基板とする構成例である。
図2に示すように、有機薄膜太陽電池は、第1電極32及び第2電極34からなる一対の電極、及び一対の電極間に挟持される活性層50と、熱伝導率が10W/m・Kよりも大きく、かつ500W/m・Kよりも小さい金属又は合金を含む基板12、及び基板上に設けられた絶縁膜14を備えた絶縁膜積層基板10と、絶縁膜積層基板10の絶縁膜14、及び一対の電極のうちのいずれか一方の電極の間に挟まれた封止層60とを備えている。
この支持基板20の材料は、電極を形成し、有機化合物を含有する層を形成する際に化学的に変化しないものであればよい。支持基板20の材料としては、例えば、ガラス、プラスチック、高分子フィルム、シリコン等が挙げられる。
なお、電子供与性化合物と電子受容性化合物とは、これらの化合物のエネルギー準位のエネルギーレベルから相対的に決定され、1つの化合物が電子供与性化合物、電子受容性化合物のいずれともなり得る。
a)陽極/活性層/陰極
b)陽極/正孔輸送層/活性層/陰極
c)陽極/活性層/電子輸送層/陰極
d)陽極/正孔輸送層/活性層/電子輸送層/陰極
e)陽極/電子供給性層/電子受容性層/陰極
f)陽極/正孔輸送層/電子供給性層/電子受容性層/陰極
g)陽極/電子供給性層/電子受容性層/電子輸送層/陰極
h)陽極/正孔輸送層/電子供給性層/電子受容性層/電子輸送層/陰極
(ここで、記号「/」は、記号「/」を挟む層同士が隣接して積層されていることを示す。)
上記各層は、単層で構成されるのみならず、2層以上の積層体として構成されていてもよい。
第1電極32上には、第1電荷輸送層42が設けられている。第1電荷輸送層42は、第1電極32が陽極である場合には正孔輸送層であり、第1電極32が陰極である場合には電子輸送層である。
換言すると、封止層60は、絶縁膜積層基板10の絶縁膜14、及び一対の電極のうちのいずれか一方の電極に挟まれている。この構成例では「いずれか一方の電極」とは第2電極34である。封止層60は、接着性、耐熱性、水分、酸素等に対するバリア性を考慮して、従来公知の任意好適な材料を用いて形成することができる。封止層60の材料の例としては、エポキシ樹脂、シリコーン樹脂、アクリル樹脂、メタアクリル樹脂を材料とする封止材、接着材が挙げられる。
有機薄膜太陽電池の製造方法について、図2を参照して説明する。
第1の実施形態の有機薄膜太陽電池の製造方法は、第1電極32及び第2電極34からなる一対の電極、一対の電極間に挟持される活性層50を備える有機薄膜太陽電池の製造方法であって、金属又は合金を含む基板12、及び基板12に形成された絶縁膜14を備える絶縁膜積層基板10を準備する工程と、支持基板20上に第1電極32を形成する工程と、第1電極32が形成された支持基板20上に、第1電荷輸送層42を形成する工程と、第1電荷輸送層42上に、活性層50を形成する工程と、活性層50上に、第2電荷輸送層44を形成する工程と、第2電荷輸送層44上に、第2電極34を形成する工程と、第2電極34と絶縁膜積層基板10の絶縁膜14とを封止材料により接合して、第2電極34と絶縁膜14とに挟まれた封止層60を形成する工程とを含む。
基板12の一方の主面上に絶縁膜14を形成して、絶縁膜積層基板10を形成する。絶縁膜14は、材料の塗布及び熱酸化のような材料に応じた任意好適な手法により形成することができる。
以上の工程を実施することにより、有機薄膜太陽電池を製造することができる。
<有機薄膜太陽電池>
図3を参照して、第2の実施形態の有機薄膜太陽電池の構成について説明する。なお第1の実施形態で既に説明した構成と同一の構成要素については、同一の符号を付してその詳細な説明を省略する場合がある。
第2の実施形態の有機薄膜太陽電池は、基板12と基板12上に積層された絶縁膜14とを備えている絶縁膜積層基板10を、支持基板とする構成例である。
この封止基板20の材料は、電極を形成し、有機化合物を含有する層を形成する際に化学的に変化しないものであればよい。封止基板20の材料の例としては、ガラス、プラスチック、高分子フィルム、シリコン等が挙げられる。
絶縁膜積層基板10を透明とすることができる場合には、封止基板20として不透明な基板を用いることができる。
第1電極32上には、第1電荷輸送層42が設けられている。第1電荷輸送層42は、第1電極32が陽極である場合には正孔輸送層であり、第1電極32が陰極である場合には電子輸送層である。
封止層60は、第2電極34の表面の全面に形成されていても、第2電極34の表面のうちの一部分である部分領域に形成されていてもよい。
有機薄膜太陽電池の製造方法について、図3を参照して説明する。
第2の実施形態の有機薄膜太陽電池の製造方法は、第1電極32及び第2電極34からなる一対の電極、一対の電極間に挟持される活性層50を備える有機薄膜太陽電池の製造方法であって、金属又は合金を含む基板12、及び基板12に形成された絶縁膜14を備える絶縁膜積層基板10を準備する工程と、絶縁膜積層基板10の絶縁膜14上に第1電極32を形成する工程と、第1電極32が形成された絶縁膜積層基板10上に、第1電荷輸送層42を形成する工程と、第1電荷輸送層42上に、活性層50を形成する工程と、活性層50上に、第2電荷輸送層44を形成する工程と、第2電荷輸送層44上に、第2電極34を形成する工程と、第2電極34と封止基板20とを封止材により接合して、第2電極34と封止基板20とに挟まれた封止層60を形成する工程とを含む。
基板12の一方の主面上に絶縁膜14を形成して、絶縁膜積層基板10を形成する。絶縁膜14は、材料の塗布及び熱酸化のような材料に応じた任意好適な手法により形成するのがよい。
第1電極32は、例えば絶縁膜14上に導電性材料の薄膜を任意好適な方法により形成し、導電性材料の薄膜をフォトリソグラフィ工程及びエッチング工程のような任意好適な方法によりパターニングして形成してもよい。
さらに第2電荷輸送層44上に第2電極34を形成する。第2電極34は、例えば塗工液、すなわち溶液を用いる成膜方法により形成してもよい。第2電極34は、例えば蒸着法のような従来公知の任意好適な方法により形成してもよい。
以上の工程を実施することにより、有機薄膜太陽電池を製造することができる。
ここで有機薄膜太陽電池の動作機構を簡単に説明する。透明又は半透明の電極を透過して活性層に入射した入射光のエネルギーが、電子受容性化合物及び/又は電子供与性化合物で吸収され、電子と正孔とが結合した励起子を生成する。生成した励起子が移動して、電子受容性化合物と電子供与性化合物とが接合しているヘテロ接合界面に達すると、界面でのそれぞれのHOMOエネルギー及びLUMOエネルギーの違いにより電子と正孔とが分離し、独立に動くことができる電荷(電子及び正孔)が発生する。発生した電荷がそれぞれ電極(陰極、陽極)に移動することにより素子外部へ電気エネルギー(電流)として取り出すことができる。
本発明の製造方法により製造される有機薄膜太陽電池は、透明又は半透明の電極である第1電極及び/又は第2電極を透過させて太陽光等の光を素子内に入射させることにより、電極間に光起電力が発生することにより太陽電池として動作させることができる。有機薄膜太陽電池を複数集積することにより有機薄膜太陽電池モジュールとして用いることもできる。
ステンレス鋼(SUS304)の基板を準備し、アセトンを用いて脱脂処理した後、一方の主面にポリシラザン(AZエレクトロニックス社製、商品名:アクアミカ(NL120A-20))を塗布する。次いで120℃で30分間の熱処理することで、基板上に絶縁膜(シリコン酸化膜)が形成された絶縁膜積層基板を得た。
ステンレス鋼の基板に代えて銅基板とした以外は実施例1と同様にして有機薄膜太陽電池を作製した。
Al層上に固着する基板をガラス基板とした以外は実施例1と同様にして有機薄膜太陽電池を作製した。
作製された有機薄膜太陽電池について、ソーラシミュレータ(山下電装社製、商品名YSS-80)を用い、AM1.5Gフィルタを通した放射照度100mW/cm2の光を120分間連続照射し、照射前後の有機薄膜太陽電池の温度を熱電対で測定した。
比較例1のガラス基板を用いた場合、光照射後の有機薄膜太陽電池の温度が、40±2℃であったのに対し、実施例1、実施例2の絶縁膜積層基板を用いた場合には、光照射後の有機薄膜太陽電池の温度が、いずれも36±2℃であった。したがって本発明の絶縁膜積層基板を用いることにより光照射前後での有機薄膜太陽電池の温度の上昇幅を小さくできることが分かった。
Claims (12)
- 第1電極及び第2電極からなる一対の電極と、
前記一対の電極間に挟持される活性層と、
熱伝導率が10W/m・Kよりも大きく、かつ500W/m・Kよりも小さい金属又は合金を含む基板、及び該基板上に設けられた絶縁膜を備えた絶縁膜積層基板と、
前記絶縁膜積層基板の前記絶縁膜、及び前記一対の電極のうちのいずれか一方の電極の間に挟まれた封止層と
を備える、有機薄膜太陽電池。 - 第1電極及び第2電極からなる一対の電極と、
前記一対の電極間に挟持される活性層と、
熱伝導率が10W/m・Kよりも大きく、かつ500W/m・Kよりも小さい金属又は合金を含む基板、及び該基板上に設けられた絶縁膜を備え、該絶縁膜が前記一対の電極のうちのいずれか一方の電極に接して設けられた絶縁膜積層基板とを備える、有機薄膜太陽電池。 - 金属がアルミニウム又は銅である、請求項1に記載の有機薄膜太陽電池。
- 合金がステンレス鋼である、請求項1に記載の有機薄膜太陽電池。
- 絶縁膜が、絶縁性無機化合物又は絶縁性有機化合物からなる、請求項1に記載の有機薄膜太陽電池。
- 絶縁性無機化合物が、酸化物、窒化物又は炭化物である、請求項5に記載の有機薄膜太陽電池。
- 絶縁性無機化合物が、ケイ素、アルミニウム及びジルコニウムからなる群から選ばれるいずれかを含む、請求項5に記載の有機薄膜太陽電池。
- 絶縁性有機化合物がポリイミドである、請求項5に記載の有機薄膜太陽電池。
- 絶縁膜積層基板が支持基板である、請求項2に記載の有機薄膜太陽電池。
- 絶縁膜積層基板が封止基板である、請求項1に記載の有機薄膜太陽電池。
- 金属又は合金を含む基板、及び該基板に形成された絶縁膜を備える絶縁膜積層基板を準備する工程と、
支持基板上に第1電極を形成する工程と、
第1電極が形成された基板上に、第1電荷輸送層を形成する工程と、
第1電荷輸送層上に、活性層を形成する工程と、
活性層上に、第2電荷輸送層を形成する工程と、
第2電荷輸送層上に、第2電極を形成する工程と、
第2電極と絶縁膜積層基板の絶縁膜とを封止材により接合して、第2電極と絶縁膜とに挟まれた封止層を形成する工程と
を含む、有機薄膜太陽電池の製造方法。 - 金属又は合金を含む基板、及び該基板に形成された絶縁膜を備える絶縁膜積層基板を準備する工程と、
絶縁膜積層基板の絶縁膜上に第1電極を形成する工程と、
第1電極が形成された絶縁膜積層基板上に、第1電荷輸送層を形成する工程と、
第1電荷輸送層上に、活性層を形成する工程と、
活性層上に、第2電荷輸送層を形成する工程と、
第2電荷輸送層上に、第2電極を形成する工程と、
第2電極と封止基板とを封止材により接合して、該第2電極と該封止基板とに挟まれた封止層を形成する工程と
を含む、有機薄膜太陽電池の製造方法。
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004165513A (ja) * | 2002-11-14 | 2004-06-10 | Matsushita Electric Works Ltd | 有機光電変換素子及び有機光電変換素子用封止部材 |
WO2007010938A1 (ja) * | 2005-07-20 | 2007-01-25 | Seiko Epson Corporation | 電子デバイスおよび電子機器 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04286147A (ja) * | 1991-03-15 | 1992-10-12 | Oki Electric Ind Co Ltd | 樹脂封止型半導体装置 |
JP3316390B2 (ja) * | 1996-09-09 | 2002-08-19 | シャープ株式会社 | 太陽電池モジュールおよびその製造方法 |
AU768085B2 (en) * | 1999-04-28 | 2003-12-04 | E.I. Du Pont De Nemours And Company | Flexible organic electronic device with improved resistance to oxygen and moisture degradation |
JP3507396B2 (ja) * | 2000-03-03 | 2004-03-15 | 株式会社ルネサステクノロジ | 光結合装置とその組立方法 |
JP2002141532A (ja) * | 2000-11-02 | 2002-05-17 | Canon Inc | 集積型光起電力素子の製造方法 |
JPWO2003038909A1 (ja) * | 2001-10-31 | 2005-02-24 | ソニー株式会社 | 光電変換素子の製造方法および光電変換素子 |
JP2004079823A (ja) * | 2002-08-20 | 2004-03-11 | Mitsubishi Heavy Ind Ltd | 封止構造及びその封止構造を用いた太陽電池モジュール及び封止方法及び太陽電池モジュールの封止方法 |
JP2004214641A (ja) * | 2002-12-16 | 2004-07-29 | Dainippon Printing Co Ltd | 太陽電池モジュール用充填材シートおよびそれを使用した太陽電池モジュール |
JP4370826B2 (ja) * | 2003-06-27 | 2009-11-25 | 富士電機システムズ株式会社 | 太陽電池モジュールおよび太陽電池モジュールの製造方法 |
JP2005332985A (ja) * | 2004-05-20 | 2005-12-02 | Sanyo Electric Co Ltd | 半導体製造装置およびそれを用いて製造した光起電力装置 |
JP2006332380A (ja) * | 2005-05-26 | 2006-12-07 | Matsushita Electric Works Ltd | 有機太陽電池及びその製造方法 |
US20070012352A1 (en) * | 2005-07-18 | 2007-01-18 | Bp Corporation North America Inc. | Photovoltaic Modules Having Improved Back Sheet |
JP2007288143A (ja) * | 2006-03-22 | 2007-11-01 | Hitachi Metals Ltd | 凹凸付金属基板及びその製造方法 |
CN201038178Y (zh) * | 2007-01-23 | 2008-03-19 | 李毅 | 一种柔性太阳能电池 |
US20100300352A1 (en) * | 2007-10-17 | 2010-12-02 | Yann Roussillon | Solution deposition assembly |
CN101499492B (zh) * | 2008-02-02 | 2010-09-15 | 财团法人工业技术研究院 | 透明型太阳能电池模块 |
US20120090778A1 (en) * | 2010-10-18 | 2012-04-19 | Du Pont Apollo Limited | Powder coating for photovoltaic module |
-
2010
- 2010-10-22 CN CN201080048074.2A patent/CN102668155B/zh not_active Expired - Fee Related
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- 2010-10-22 WO PCT/JP2010/068733 patent/WO2011052510A1/ja active Application Filing
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004165513A (ja) * | 2002-11-14 | 2004-06-10 | Matsushita Electric Works Ltd | 有機光電変換素子及び有機光電変換素子用封止部材 |
WO2007010938A1 (ja) * | 2005-07-20 | 2007-01-25 | Seiko Epson Corporation | 電子デバイスおよび電子機器 |
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