WO2011040543A1 - ボンディングキャピラリー - Google Patents

ボンディングキャピラリー Download PDF

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Publication number
WO2011040543A1
WO2011040543A1 PCT/JP2010/067114 JP2010067114W WO2011040543A1 WO 2011040543 A1 WO2011040543 A1 WO 2011040543A1 JP 2010067114 W JP2010067114 W JP 2010067114W WO 2011040543 A1 WO2011040543 A1 WO 2011040543A1
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Prior art keywords
bonding
bonding capillary
attenuation
diameter
bottleneck
Prior art date
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Ceased
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PCT/JP2010/067114
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English (en)
French (fr)
Japanese (ja)
Inventor
匡央 和田
衛 櫻井
雄一 吉井
内村　健志
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Toto Ltd
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Toto Ltd
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Priority to CN201080042841.9A priority Critical patent/CN102549730B/zh
Priority to PH1/2012/500611A priority patent/PH12012500611A1/en
Publication of WO2011040543A1 publication Critical patent/WO2011040543A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
    • B23K20/103—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding using a roller
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Definitions

  • An aspect of the present invention generally relates to a bonding capillary used when connecting with a thin metal wire to obtain electrical continuity between an electrode formed on a semiconductor element and a lead frame.
  • the material of the thin metal wire is copper.
  • the present invention relates to a bonding capillary suitable for a copper alloy.
  • the bonding capillary increases the load for pressing the fine metal wires against the aluminum electrode and lead frame in order to shorten the bonding cycle and increases the ultrasonic power applied to the bonding capillary. Therefore, there is a tendency to obtain a strong bonding strength even when bonding is performed at high speed (for example, see Non-Patent Document 1). In such a case, the stress at the time of joining may cause mechanical damage to the aluminum electrode or the semiconductor element itself. In recent years, attempts to use copper, which is lower in cost than gold, as a material for fine metal wires have spread, and copper is harder than gold, so if you increase the bonding load and ultrasonic power to join at high speed, aluminum further increases. There is a problem that it is easy to cause mechanical damage to the electrode and the semiconductor element.
  • the bond load (bonding load) and ultrasonic power are adjusted to limit the amplitude of the bonding capillary tip at no load to a certain range. Some of them are said to be able to suppress damage (see, for example, Patent Document 1). Also in this case, if a copper wire is used, in order to obtain a certain collapsed shape at the tip of the copper wire, the bond load must be increased beyond the limit range referred to in Patent Document 1, and mechanically applied to an aluminum electrode or a semiconductor element. In order to suppress serious damage, it was necessary to greatly reduce the ultrasonic power according to the bond load.
  • a bonding capillary for gold wires has been proposed in which a sufficient bottleneck height is secured to prevent interference with the wires of the integrated chip (see Patent Document 2).
  • the bonding capillary disclosed in Patent Document 2 if the bottleneck height is excessively increased, shearing breaks, so that a height for avoiding wire contact is ensured by using a two-stage high bottleneck type. I am doing so.
  • the amplitude at the tip of the bonding capillary can be reduced even with a lower bond load and lower ultrasonic power than before. Since it can be increased, the tensile strength and shear strength of the joint portion can be increased.
  • Japanese Patent No. 3086158 (first page, FIG. 1) Japanese Patent Laid-Open No. 2007-150225 (FIG. 4)
  • An object of the present invention is to provide a bonding capillary in which the aluminum electrode and the semiconductor element are not damaged by the transmission.
  • a first invention is provided with a first cylindrical portion mechanically fixed to a bonding apparatus, a conical portion provided on the bonding side of the first cylindrical portion, and a conical portion provided on the bonding side.
  • a bottleneck portion, and a gap between the cone portion and the bottleneck portion is smaller than a diameter dimension of an end portion on the bonding side of the cone portion, and the bottleneck portion
  • It is a bonding capillary characterized in that an attenuation portion having a diameter dimension larger than a diameter dimension of an end portion opposite to a bonding side is provided. Since this bonding capillary is provided with an attenuation portion, an excessive inclination of the bottleneck portion can be suppressed. Therefore, bonding without mechanical damage to the aluminum electrode or the semiconductor element is possible. In this case, even when the wire bonding of the copper wire is performed by the existing bonding apparatus optimized for the gold wire, damage to the aluminum electrode and the semiconductor element due to excessive transmission of ultrasonic power can be suppressed.
  • the bonding capillary according to the first aspect wherein the damping portion has a rigidity higher than that of the bottleneck portion and lower than that of the first cylindrical portion. It is. According to this bonding capillary, it is possible to further suppress the occurrence of excessive deformation on the tip side of the bonding capillary. That is, the excessive inclination of a bottleneck part can be suppressed more.
  • the bonding capillary according to the first or second aspect wherein the attenuation portion has a diameter of ⁇ 0.3 mm or less.
  • this bonding capillary it is possible to further suppress the generation of excessive and local vertical stress on the aluminum electrode or the semiconductor element. Moreover, the excessive inclination of a bottleneck part can be suppressed more by setting it as the attenuation
  • the bonding capillary according to any one of the first to third aspects, wherein the length of the attenuation portion is not less than 0.1 mm and not more than 0.5 mm. According to this bonding capillary, it is possible to further suppress the generation of excessive and local vertical stress on the aluminum electrode or the semiconductor element. Moreover, the excessive inclination of a bottleneck part can be suppressed more by setting it as the attenuation
  • FIG. 1 It is a schematic diagram which shows the bonding capillary in one Example of this invention. It is a model enlarged view which shows the front-end
  • (A) is the case of the bonding capillary according to Comparative Example 1
  • (b) is the case of the bonding capillary according to the embodiment of the present invention.
  • (A) is the scanning electron micrograph of a junction part.
  • FIG. 6 is a schematic diagram showing a bonding capillary according to Comparative Example 1.
  • FIG. 6 is a schematic enlarged view showing a tip shape of a bonding capillary according to Comparative Example 1.
  • FIG. 6 is a schematic diagram showing a bonding capillary according to Comparative Example 2.
  • FIG. 6 is a schematic enlarged view showing a tip shape of a bonding capillary according to Comparative Example 2.
  • FIG. 2 is a schematic enlarged view showing a tip shape of a bonding capillary according to Example 1.
  • FIG. 10 is a schematic enlarged view showing the tip shape of a bonding capillary according to Example 7.
  • FIG. 6 is a schematic enlarged view showing a tip shape of a bonding capillary according to Example 4. It is a graph for demonstrating the amount of aluminum splash. It is a figure for illustrating the measurement data of the amount of aluminum splash. It is a graph for exemplifying ball shear strength. It is a figure for illustrating the measurement data of ball shear strength.
  • the inventors have found that the amplitude behavior of the bonding capillary during the wire bonding process varies depending on the configuration of the tip of the bonding capillary. Furthermore, by conducting stress analysis and actual machine evaluation, we obtained knowledge about the configuration of the tip of the bonding capillary suitable for suppressing mechanical damage to the aluminum electrode and the semiconductor element.
  • FIG. 1 is a schematic view showing a bonding capillary according to an embodiment of the present invention.
  • a bonding capillary 1 includes a first cylindrical part 23 having a diameter for mechanically fixing to a bonding apparatus, a conical part 22 connected to an attenuation part 25, and a wired fine metal wire adjacent thereto.
  • a bottleneck part 21 for performing bonding at a position to be avoided and a tip part 24 on the tip surface of the bottleneck part 21 are provided.
  • the bonding capillary 1 includes a first cylindrical portion 23, a conical portion 22, an attenuation portion 25, and a bottleneck portion 21.
  • a hole for inserting a fine metal wire is provided inside the bonding capillary 1 so as to penetrate in the axial direction.
  • the first cylindrical portion 23 is mechanically fixed to the bonding apparatus. Therefore, the first cylindrical portion 23 has a diameter dimension that can be mechanically fixed to the bonding apparatus.
  • the conical portion 22 is provided on the bonding side of the first cylindrical portion 23 (the tip side of the bonding capillary 1).
  • the conical portion 22 has a truncated cone shape such that the diameter size becomes smaller (the cross-sectional area becomes smaller) toward the tip portion 24 side, and the diameter size of the end portion connected to the first cylindrical portion 23 is the first. It is substantially the same as the diameter dimension of one cylindrical portion 23.
  • the attenuation part 25 is provided between the conical part 22 and the bottleneck part 21. Further, the attenuating portion 25 is smaller in diameter than the end of the conical portion 22 on the bonding side and larger in diameter than the end of the bottle neck 21 opposite to the bonding side. Have.
  • the diameter dimension of the attenuation part 25 is smaller than the diameter dimension on the tip part 24 side of the conical part 22, and larger than the diameter dimension of the end part on the opposite side of the bottle neck part 21 from the tip part 24 side. .
  • the attenuation part 25 can have higher rigidity than the bottle neck part 21 and lower rigidity than the rigidity of the first cylindrical part 23.
  • the bottleneck portion 21 is provided on the side where the conical portion 22 is bonded.
  • the bottleneck part 21 has a diameter dimension which can wire-bond at a predetermined joining position avoiding the adjacent metal fine wire already wired.
  • the front end surface of the bottle neck portion 21 is a front end portion 24.
  • FIG. 2 is a schematic enlarged view showing the tip shape of the bonding capillary according to one embodiment of the present invention.
  • FIG. 2 is an enlarged view of part A in FIG.
  • an attenuation portion 25 is provided. That is, by providing the attenuation part 25, it is possible to suppress the occurrence of excessive local local stress in the aluminum electrode or the semiconductor element. Details regarding generation of excessive and local vertical stress will be described later.
  • the attenuation part 25 has an attenuation part length 26 and an attenuation part diameter 27. That is, the axial length of the attenuation part 25 is the attenuation part length 26 and the diameter dimension is the attenuation part diameter 27.
  • the attenuation part diameter 27 is formed small.
  • the attenuation part diameter 27 is formed larger than the diameter dimension of the tip part 24. That is, as described above, the attenuation portion diameter 27 (diameter size of the attenuation portion 25) is smaller than the diameter size of the conical portion 22 on the distal end portion 24 side, and is opposite to the distal end portion 24 side of the bottle neck portion 21. It is larger than the diameter of the end.
  • the attenuation portion 25 that is at least thinner than the first cylindrical portion 23, it is possible to obtain an effect of suppressing the vertical stress on the aluminum electrode or the semiconductor element generated by the ultrasonic vibration transmitted to the bonding capillary 1.
  • the tip portion 24 also vibrates due to the ultrasonic vibration.
  • the amplitude behavior of the entire bonding capillary 1 is controlled, and the tip end of the bonding capillary 1. It is possible to suppress the vertical behavior of the (tip portion 24). Therefore, local concentrated stress acting in the vertical direction with respect to the aluminum electrode or the semiconductor element can be reduced.
  • the local concentration stress in the vertical direction is reduced with respect to the aluminum electrode and the semiconductor element, and the vertical contact is more uniform over the entire contact surface between the ball and the aluminum electrode formed at the end of the thin metal wire. Stress can be generated. Therefore, it is possible to improve the generation efficiency of the frictional energy between the ball and the aluminum electrode during the wire bonding process. Therefore, the bonding shear strength can be kept high. Accordingly, it is possible to solve the problem that the aluminum electrode and the semiconductor element are peeled off due to mechanical damage while maintaining a high bonding strength between the tip of the fine metal wire and the aluminum electrode.
  • damping part diameter 27 was illustrated as the attenuation
  • the truncated cone shape from which the diameter becomes small from the cone part 22 to the bottle neck part 21 is also suitable. That is, although the cylindrical shape whose diameter dimension is the attenuation part diameter 27 was illustrated as an external shape of the attenuation part 25, it is not necessarily limited to this.
  • the diameter dimension can be reduced (the cross-sectional area is reduced) from the conical part 22 side to the bottleneck part 21 side.
  • an elliptical shape, a polygonal column shape, or a polygonal frustum shape is suitable as the external shape of the attenuation portion 25.
  • FIG. 3 is an analysis diagram for illustrating the vibration behavior of the bonding capillary.
  • 3A shows the case of a bonding capillary according to Comparative Example 1 described later (see FIGS. 7 and 8), and
  • FIG. 3B shows the case of the bonding capillary according to the embodiment of the present invention. That is, FIG. 3A shows the case of a bonding capillary not provided with the attenuating portion 25 as in the bonding capillary disclosed in Patent Document 2, and FIG.
  • 3B shows the case of the bonding capillary according to Example 3 described later. is there.
  • the amplitude behavior of the bonding capillary was analyzed by CAE (Computer Aided Engineering) analysis.
  • the excitation direction was a direction perpendicular to the axial direction of the bonding capillary, the amplitude was 1 ⁇ m, and the frequency was 120 kHz.
  • the tip of the bonding capillary is pressed against the electrode on the 1st side via a ball formed at the end of the fine metal wire.
  • tip part of a bonding capillary is pressed on the electrode of 2nd side via a metal fine wire.
  • FIG. 4 is an analysis diagram for illustrating the local vertical stress generated in the joint portion.
  • FIG. 4 is an analysis of local vertical stress generated by joining via a ball formed at the end of a thin metal wire by CAE analysis.
  • a large vertical stress is locally generated at the periphery of the bonded portion (the periphery of the ball).
  • a compressive stress is generated on the right side in FIG. 4 and a tensile stress is generated on the left side in FIG.
  • compressive stress and tensile stress are alternately generated.
  • FIG. 5 is a photograph illustrating aluminum splash and damage to a semiconductor device.
  • FIG. 5A is a scanning electron microscope (SEM) photograph of the bonded portion.
  • FIG. 5B is a scanning electron micrograph of the surface of the semiconductor element provided in the lower layer of the aluminum electrode.
  • SEM scanning electron microscope
  • FIG. 5A is a scanning electron microscope (SEM) photograph of the bonded portion.
  • FIG. 5B is a scanning electron micrograph of the surface of the semiconductor element provided in the lower layer of the aluminum electrode.
  • the protective action of the semiconductor element may be reduced.
  • damage as shown in FIG. 5B may occur on the surface of the semiconductor element.
  • FIG. 6 is a graph for illustrating the vertical stress generated in the joint portion.
  • shaft of FIG. 6 represents the vertical direction stress
  • the horizontal axis represents the position in a junction part. In this case, 0 (zero) on the horizontal axis is the center position of the joint portion (center position of the pressed ball portion).
  • B in FIG. 6 is the case of the bonding capillary according to Comparative Example 1 described later
  • C in FIG. 6 is the case of the bonding capillary according to the embodiment of the present invention. That is, B in FIG.
  • FIG. 6 is the case of a bonding capillary not provided with the attenuating portion 25 as in the bonding capillary disclosed in Patent Document 2, and C in FIG. 6 is the case of the bonding capillary according to Example 3 described later. is there.
  • the bonding capillary according to the embodiment of the present invention it is possible to significantly reduce the vertical stress generated at the periphery of the bonded portion (the periphery of the ball). Further, it is possible to reduce the vertical stress generated in the entire area of the joint portion.
  • Table 1 summarizes a comparison between examples of the bonding capillary according to the embodiment of the present invention and comparative examples.
  • Comparative Example 1 is a case of a bonding capillary that does not include the attenuation portion 25 as in the bonding capillary disclosed in Patent Document 2.
  • FIG. 7 is a schematic diagram showing a bonding capillary according to Comparative Example 1.
  • FIG. 8 is a schematic enlarged view showing the tip shape of the bonding capillary according to Comparative Example 1.
  • FIG. 8 is an enlarged view of a portion D in FIG.
  • the bonding capillary according to Comparative Example 1 includes a first cylindrical portion 13, a conical portion 12, and a bottleneck portion 11. Further, the front end surface of the bottle neck portion 11 is a front end portion 14. That is, the bonding capillary according to Comparative Example 1 is not provided with an attenuation portion.
  • the ball shear strength is obtained in the bonding capillary having a bottleneck in which the diameter of the tip 14 is 0.075 mm and the length of the bottleneck 11 is 0.150 mm.
  • the maximum stress value generated in the vertical direction is analyzed, and the maximum stress value at this time is set to 1.
  • the bonding strength on the 1st side is referred to as ball shear strength. That is, as shown in Table 1, in the case of the bonding capillary according to Comparative Example 1, although good ball shear strength could be obtained, damage was generated on the surface of the semiconductor element. Also, the aluminum splash has increased.
  • Comparative Example 2 is a case of a bonding capillary equivalent to the bonding capillary disclosed in Patent Document 2. That is, Comparative Example 2 is also a case of a bonding capillary that does not include the attenuation portion 25.
  • FIG. 9 is a schematic diagram showing a bonding capillary according to Comparative Example 2.
  • FIG. 10 is a schematic enlarged view showing the tip shape of the bonding capillary according to Comparative Example 2.
  • FIG. 10 is an enlarged view of an E portion in FIG.
  • the bonding capillary according to Comparative Example 2 includes a first cylindrical portion 13, a conical portion 12 a, and a bottleneck portion 11. Further, the front end surface of the bottle neck portion 11 is a front end portion 14.
  • the bonding capillary according to Comparative Example 2 is not provided with an attenuation portion.
  • a step 103 ′ is provided between the first cylindrical portion 13 and the conical portion 12a.
  • Example 1 In the embodiment of the present invention shown in FIG. 11, the diameter of the tip 24 is 0.075 mm, the length of the bottleneck 21 is 0.150 mm, the attenuation 26 shown in FIG. The maximum stress in the vertical direction when the part diameter 27 is 0.168 mm is 71.7%, which indicates that the vertical stress that leads to mechanical damage to the aluminum electrode and the semiconductor element can be reduced.
  • the ball shear strength was 18.91 gf
  • the aluminum splash amount could be smaller than that of Comparative Example 1, and no damage was observed on the surface of the semiconductor element.
  • both the aluminum splash amount and the ball shear strength have a smaller numerical variation, enabling more stable wire bonding than in the past.
  • FIG. 11 is a schematic enlarged view showing the tip shape of the bonding capillary according to the first embodiment.
  • Example 1 shows the attenuation part length 26, the attenuation part diameter 27, the diameter dimension of the tip part 24, and the length of the bottleneck part 21 of the bonding capillary 1 shown in FIGS. This is the case.
  • the external appearance of the attenuation part 25a has a truncated cone shape.
  • the diameter of the attenuation part is set to the diameter dimension (minimum diameter dimension) of the end surface on the bottle neck part 21 side.
  • the angle formed by the central axis and the ridge line is 10 ° (20 ° for both angles).
  • the analysis value of the vertical stress can be 71.7% of Comparative Example 1.
  • the amount of aluminum splash can be suppressed.
  • the occurrence of damage on the surface of the semiconductor element was not confirmed.
  • the ball shear strength can be 18.91 gf, and a good ball shear strength can be obtained.
  • Example 7 In the embodiment of the present invention shown in FIG. 12, the diameter of the tip 24 is 0.075 mm, the length of the bottle neck 21 is 0.150 mm, the length 26 of the attenuation shown in FIG.
  • the maximum stress in the vertical direction of the aluminum electrode when the diameter 27 was 0.252 mm was 71.8%.
  • the ball shear was 18.89 gf, the aluminum splash amount could be made smaller than that of the conventional comparative example, and the occurrence of aluminum electrode damage was not confirmed. Also in this embodiment, both the aluminum splash amount and the ball shear strength have a small numerical variation, and stable wire bonding is possible as compared with the prior art.
  • FIG. 12 is a schematic enlarged view showing the tip shape of the bonding capillary according to the seventh embodiment.
  • Example 7 shows the attenuating part length 26, the attenuating part diameter 27, the diameter dimension of the tip part 24, and the length of the bottleneck part 21 of the bonding capillary 1 shown in FIG. 1 and FIG. This is the case.
  • damping part 25b is exhibiting truncated cone shape. Therefore, the attenuation part diameter shown in Table 1 is the diameter dimension (minimum diameter dimension) of the end surface on the bottleneck part 21 side.
  • the angle formed by the central axis and the ridge line is 10 ° (20 ° for both angles).
  • the analysis value of the vertical stress can be 71.8% of Comparative Example 1.
  • the amount of aluminum splash can be suppressed.
  • the occurrence of damage on the surface of the semiconductor element was not confirmed.
  • the ball shear strength can be set to 18.89 gf, and a good ball shear strength can be obtained.
  • the analysis value of the vertical stress can be made smaller than that in the case of Comparative Example 1. Further, in the case of Example 3, the aluminum splash amount can be suppressed as compared with the case of Comparative Example 1. Also, in Examples 2 to 6 and 8, no occurrence of damage on the surface of the semiconductor element was confirmed. Also in the case of Example 3, the ball shear strength can be 18.00 gf, and a good ball shear strength can be obtained. In this case, the appearance of the attenuating portions of Examples 2, 3, 5 to 8 has a truncated cone shape. Therefore, the attenuation part diameter shown in Table 1 is the diameter dimension (minimum diameter dimension) of the end surface on the bottleneck part 21 side.
  • the angle formed by the central axis and the ridge line is 10 ° (20 ° for both angles).
  • the external appearance of the attenuation part of Example 4 has a cylindrical shape.
  • FIG. 13 is a schematic enlarged view showing the tip shape of the bonding capillary according to the fourth embodiment.
  • the attenuation part diameter shown in Table 1 is the diameter of the attenuation part 25c.
  • the diameter of the attenuation portion is preferably ⁇ 0.3 mm or less.
  • the length of an attenuation part shall be 0.1 mm or more and 0.5 mm or less.
  • FIG. 14 is a graph for illustrating the amount of aluminum splash.
  • FIG. 15 is a diagram for illustrating measurement data of the aluminum splash amount.
  • FIG. 14 is a graph based on the data illustrated in FIG. “Ave” represents an average value, “Max” represents a maximum value, “Min” represents a minimum value, and “ ⁇ ” deviation.
  • FIG. 16 is a graph for illustrating the ball shear strength.
  • FIG. 17 is a diagram for illustrating measurement data of ball shear strength.
  • FIG. 16 is a graph based on the data illustrated in FIG. “Ave” represents an average value, “Max” represents a maximum value, “Min” represents a minimum value, and “ ⁇ ” deviation. As shown in FIGS.
  • the ball shear strength can be made substantially equal to that in Comparative Example 1, and the ball shear strength variation ( Deviation) can be reduced. That is, this means that stable wire bonding is possible compared to the case of Comparative Example 1.
  • ceramics having physical properties of hardness of 1900 Hv or more and bending strength of 1100 Mpa or more is desirable.
  • a ceramic material containing 75% or more is desirable.
  • the bonding capillary can be provided so as not to cause the damage, and the industrial merit is great.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Wire Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
PCT/JP2010/067114 2009-09-30 2010-09-30 ボンディングキャピラリー Ceased WO2011040543A1 (ja)

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JP2014007430A (ja) * 2009-09-30 2014-01-16 Toto Ltd ボンディングキャピラリー
JP2012039032A (ja) * 2010-08-11 2012-02-23 Fujitsu Ltd ワイヤボンディング装置用キャピラリ及び超音波トランスデューサ
JP5376413B1 (ja) * 2013-01-25 2013-12-25 Ｔｏｔｏ株式会社 ボンディングキャピラリ
JP6270256B1 (ja) 2016-11-28 2018-01-31 Toto株式会社 ボンディングキャピラリ

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JP2011097042A (ja) 2011-05-12
KR20120062813A (ko) 2012-06-14
CN102549730B (zh) 2015-02-11
CN102549730A (zh) 2012-07-04

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