WO2011039950A1 - 発光素子およびそれを用いた表示装置 - Google Patents
発光素子およびそれを用いた表示装置 Download PDFInfo
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- WO2011039950A1 WO2011039950A1 PCT/JP2010/005520 JP2010005520W WO2011039950A1 WO 2011039950 A1 WO2011039950 A1 WO 2011039950A1 JP 2010005520 W JP2010005520 W JP 2010005520W WO 2011039950 A1 WO2011039950 A1 WO 2011039950A1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
Definitions
- the present invention relates to a light emitting element utilizing an electroluminescence phenomenon of an organic material and a display device using the light emitting element.
- organic electroluminescence devices that have been researched and developed are light-emitting devices that utilize the electroluminescence phenomenon of organic materials.
- As a display device using this light emitting element a configuration in which light emitting elements of blue, green and red colors are arranged on a substrate has been proposed.
- Patent Document 1 discloses a blue, green, and red light extraction efficiency in a light emitting device in which a lower electrode (mirror), a transparent conductive layer, a hole transport layer, a light emitting layer, an electron transport layer, and an upper electrode (half mirror) are stacked. It is disclosed that the optical distance between the mirror and the half mirror is adjusted so that is maximized (paragraph 0012).
- An object of the present invention is to provide a light emitting element capable of improving both the light extraction efficiency and the color purity of a light emission color, and a display device capable of realizing excellent color reproducibility by using the light emitting element. To do.
- a light-emitting element which is one embodiment of the present invention includes a reflective electrode that reflects incident light, a transparent electrode that is disposed to face the reflective electrode and transmits incident light, the reflective electrode, and the transparent electrode And a light emitting layer that emits blue light, a functional layer composed of one or more layers disposed between the reflective electrode and the light emitting layer, and the transparent electrode between A color filter disposed on the opposite side of the light emitting layer, and after a part of the blue light emitted from the light emitting layer is incident on the reflective electrode through the functional layer and reflected by the reflective electrode,
- the first optical path emitted to the outside through the functional layer, the light emitting layer, the transparent electrode, and the color filter, and the remaining part of the blue light emitted from the light emitting layer proceeds to the reflective electrode side.
- the optical film thickness of the functional layer 218 [nm] or more 238 [
- the inventors' research has revealed that by adopting the above configuration, it is possible to achieve both improvement in light extraction efficiency and improvement in color purity of the luminescent color. Details will be described later using experimental results.
- FIG. 9 is a cross-sectional view schematically illustrating a pixel structure of a display device according to one embodiment of the present invention.
- the design conditions of the blue light emitting element are shown, (a) shows the refractive index n, extinction coefficient k, and film thickness d of each layer, and (b) shows the optical film thickness when the film thickness of the transparent conductive layer is changed.
- the total L and the resonance wavelength ⁇ are shown.
- the design conditions of the red light emitting element are shown, (a) shows the refractive index n, extinction coefficient k, and film thickness d of each layer, and (b) shows the optical film thickness when the film thickness of the transparent conductive layer is changed.
- the total L and the resonance wavelength ⁇ are shown.
- Diagram for comparing the light extraction efficiency and chromaticity of light emitting elements of each color when designed with emphasis on chromaticity and when designed with emphasis on efficiency It is a figure which shows the relationship between the film thickness of a transparent conductive layer and light extraction efficiency in the light emitting element of each color, (a) is a blue light emitting element, (b) is a green light emitting element, (c) is a red light emitting element. Shows about. The relationship between the spectral intensity and the wavelength of the blue light emitting element is shown, (a) is the spectral intensity of the luminescent material, (b) is the spectral intensity when designed with chromaticity, and (c) is designed with efficiency. The spectral intensity is shown.
- the relationship between the spectral intensity and the wavelength of the green luminescent element is shown, (a) is the spectral intensity of the luminescent material, (b) is the spectral intensity when designed with emphasis on chromaticity, and (c) is designed with emphasis on efficiency.
- the spectral intensity is shown.
- the relationship between spectral intensity and wavelength for a red light emitting element is shown, (a) is the spectral intensity of the light emitting material, (b) is the spectral intensity when designed with emphasis on chromaticity, and (c) is designed with emphasis on efficiency.
- the spectral intensity is shown.
- (c) shows the case where the film thickness of the transparent conductive layer is 105 [nm]. It is a figure which shows the angle dependence of chromaticity at the time of designing a green light emitting element with emphasis on chromaticity. It is a figure which shows the angle dependence of chromaticity at the time of designing a green light emitting element with emphasis on efficiency. It is a figure which shows the angle dependence of chromaticity at the time of designing a red light emitting element with emphasis on chromaticity, (a) is the film thickness of a transparent conductive layer 141 [nm], (b) is the film
- FIG. 6 illustrates functional blocks of a display device according to one embodiment of the present invention.
- 4A and 4B illustrate the appearance of a display device according to one embodiment of the present invention.
- 4A and 4B illustrate a method for manufacturing a display device according to one embodiment of the present invention.
- 4A and 4B illustrate a method for manufacturing a display device according to one embodiment of the present invention.
- a light-emitting element includes a reflective electrode that reflects incident light, a transparent electrode that is disposed opposite to the reflective electrode and transmits incident light, the reflective electrode, and the reflective electrode
- a light emitting layer that emits blue light
- a functional layer composed of one or more layers disposed between the reflective electrode and the light emitting layer, and a transparent electrode sandwiched between the transparent electrode and the transparent electrode
- a color filter disposed on the opposite side of the light emitting layer, and a part of the blue light emitted from the light emitting layer is incident on the reflective electrode through the functional layer and reflected by the reflective electrode
- the first optical path emitted to the outside through the functional layer, the light emitting layer, the transparent electrode, and the color filter, and the remaining part of the blue light emitted from the light emitting layer proceed to the reflective electrode side.
- the optical film thickness of the functional layer 218 [nm] or more 238 [nm] or less.
- a light emitting device includes a reflective electrode that reflects incident light, a transparent electrode that is disposed to face the reflective electrode and transmits incident light, the reflective electrode, and the reflective electrode.
- a light emitting layer that emits blue light
- a functional layer composed of one or more layers disposed between the reflective electrode and the light emitting layer, and a transparent electrode sandwiched between the transparent electrode and the transparent electrode
- a color filter disposed on the opposite side of the light emitting layer, and a part of the blue light emitted from the light emitting layer is incident on the reflective electrode through the functional layer and reflected by the reflective electrode
- the first optical path emitted to the outside through the functional layer, the light emitting layer, the transparent electrode, and the color filter, and the remaining part of the blue light emitted from the light emitting layer proceed to the reflective electrode side.
- the transparent electrode Proceeds to a second optical path which is emitted to the outside through the transparent electrode and the color filter, is formed, the optical thickness L [nm] of the
- the wavelength ⁇ is a value of 256 [nm] or more and 280 [nm] or less
- ⁇ is a phase shift in the reflective electrode
- m is an integer.
- the color filter has a maximum value in the spectral intensity of transmission, while the color filter has the first wavelength region.
- the spectral intensity of the transmission takes a value smaller than the maximum value
- the blue light incident from the transparent electrode is a light component that is present in the second wavelength region and is unnecessary for obtaining the target chromaticity, and whose spectral intensity is smaller than the maximum value.
- the transmission of components may be suppressed, and the transmission of light components existing in both the first wavelength region and the third wavelength region may be allowed.
- a light-emitting element includes a reflective electrode that reflects incident light, a transparent electrode that is disposed to face the reflective electrode and transmits incident light, the reflective electrode, A light emitting layer that emits red light, disposed between the transparent electrode, a functional layer that includes one or more layers disposed between the reflective electrode and the light emitting layer, and sandwiches the transparent electrode And a color filter disposed on the opposite side of the light emitting layer, and a part of the red light emitted from the light emitting layer is incident on the reflective electrode through the functional layer and reflected by the reflective electrode Thereafter, the first optical path emitted to the outside through the functional layer, the light emitting layer, the transparent electrode, and the color filter, and the remaining part of the red light emitted from the light emitting layer proceed to the reflective electrode side.
- the optical film thickness of the functional layer is 384 [nm] or more 400 [nm] or less.
- a light emitting device includes a reflective electrode that reflects incident light, a transparent electrode that is disposed to face the reflective electrode and transmits incident light, the reflective electrode, and the reflective electrode.
- a light-emitting layer that emits red light is disposed between the transparent electrode, a functional layer that is disposed between the reflective electrode and the light-emitting layer, and is composed of one or more layers, and sandwiches the transparent electrode
- a color filter disposed on the opposite side of the light emitting layer, and a part of red light emitted from the light emitting layer is incident on the reflective electrode through the functional layer and reflected by the reflective electrode.
- the first optical path emitted to the outside through the functional layer, the light emitting layer, the transparent electrode, and the color filter, and the remaining part of the red light emitted from the light emitting layer travels toward the reflective electrode. Without the transparent electrode side Advanced, and a second optical path which is emitted to the outside through the transparent electrode and the color filter, is formed, the optical thickness L [nm] of
- wavelength ⁇ is a value of 452 [nm] or more and 470 [nm] or less
- ⁇ is a phase shift in the reflective electrode
- m is an integer.
- a display device is a display device in which light emitting elements that emit blue, green, and red light are arranged on a substrate, wherein the light emitting elements that emit blue light are the first light emitting element. It is a light emitting element which concerns on an aspect. With this configuration, the light extraction efficiency of the blue light is improved, so that the power consumption of the display device can be reduced, and the color purity of the blue light is improved, so that the color reproducibility of the image can be improved.
- the light emitting element that emits red light may be the light emitting element according to the third aspect.
- the light extraction efficiency and color purity of red light are improved, so that the power consumption of the display device and the color reproducibility of the image can be further improved.
- a display device is a display device in which light emitting elements emitting blue, green, and red light are arranged on a substrate, and the light emitting elements emitting blue light are the second light emitting elements. It is a light emitting element which concerns on an aspect. With this configuration, the light extraction efficiency of the blue light is improved, so that the power consumption of the display device can be reduced, and the color purity of the blue light is improved, so that the color reproducibility of the image can be improved.
- the light emitting element that emits red light may be the light emitting element according to the fourth aspect.
- the light extraction efficiency and color purity of red light are improved, so that the power consumption of the display device and the color reproducibility of the image can be further improved.
- FIG. 1 is a cross-sectional view schematically illustrating a pixel structure of a display device according to one embodiment of the present invention.
- the display device is an organic EL display in which blue (B), green (G), and red (R) pixels are regularly arranged in a matrix in the row direction and the column direction.
- Each pixel is composed of a light emitting element using an organic material.
- the blue light-emitting element includes a substrate 1, a reflective electrode 3, a transparent conductive layer 4, a hole injection layer 5, a hole transport layer 6, a light-emitting layer 7b, an electron transport layer 8, a transparent electrode 9, a thin film sealing layer 10, and a resin.
- the sealing layer 11 and the color filter 12b are laminated in this order. That is, the light emitting layer 7 b is disposed between the reflective electrode 3 and the transparent electrode 9.
- a functional layer composed of three layers transparent conductive layer 4, hole injection layer 5, and hole transport layer 6) is disposed between the reflective electrode 3 and the light emitting layer 7b.
- the green light emitting element has the same configuration as the blue light emitting element except for the light emitting layer 7g and the color filter 12g.
- the red light emitting element has the same configuration as the blue light emitting element except for the light emitting layer 7r and the color filter 12r.
- the substrate 1 is used in common in each color light emitting element, and the electron transport layer 8, the transparent electrode 9, the thin film sealing layer 10, and the resin sealing layer 11 are formed in common.
- each color light emitting element the presence of the reflective electrode 3 and the transparent electrode 9 realizes a one-side reflection type resonator structure.
- a part of the light emitted from the light emitting layers 7b, 7g, 7r is incident on the reflective electrode 3 through the functional layer and reflected by the reflective electrode 3, and then the functional layer, the light emitting layers 7b, 7g, 7r, the first optical path emitted to the outside through the transparent electrode 9 and the remaining part of the light emitted from the light emitting layers 7b, 7g, 7r do not travel to the reflective electrode 3 side, but to the transparent electrode 9 side.
- a second optical path that travels and is emitted to the outside through the transparent electrode 9 is formed.
- Light that passes through the transparent electrode 9 and is emitted to the outside includes both light that follows the first optical path (hereinafter referred to as “reflected light”) and light that follows the second optical path (hereinafter referred to as “direct light”). Contains ingredients.
- reflected light light that follows the first optical path
- direct light light that follows the second optical path
- the thickness of the transparent conductive layer 4 is set to 50 [nm] to 60 [nm]
- the thickness of the hole injection layer 5 is set to 40 [nm]
- the hole transport layer is formed.
- the film thickness of 6 is set to 20 [nm]
- the total L of these optical film thicknesses is set to 218 [nm] or more and 238 [nm] or less.
- the optical film thickness is a physical quantity obtained by the product of the film thickness d of each layer and the refractive index n of each layer.
- the thickness of the transparent conductive layer 4 is preferably 55 [nm].
- the above range of 50 [nm] to 60 [nm] was obtained in anticipation of manufacturing errors occurring in the range from ⁇ 5 [nm] to +5 [nm] with respect to the design value 55 [nm]. Is.
- the transparent conductive layer 4 has a thickness of 90 [nm], and the hole injection layer 5 and the hole transport layer 6 have the same thickness as the blue light emitting device.
- the film thickness of the transparent conductive layer 4 is set to 141 [nm] or more and 149 [nm] or less, and the film thicknesses of the hole injection layer 5 and the hole transport layer 6 are the same as those of the blue light emitting element.
- the total L of these optical film thicknesses is set to 384 [nm] or more and 400 [nm] or less.
- the thickness of the transparent conductive layer 4 is 144 [nm].
- a target chromaticity is determined for each color.
- Emphasis on chromaticity means that the distance between the light emitting layer and the reflective electrode is set so that the chromaticity of the emitted light approaches the target chromaticity, and then the color filter characteristics are set so that the target chromaticity is further approached. This is a design method of setting.
- the emphasis on efficiency is to set the distance between the light emitting layer and the reflective electrode so that the intensity of the emitted light is maximized, and then the color filter so that the chromaticity of the emitted light approaches the target chromaticity This is a design method of setting the characteristics of
- FIG. 2 shows design conditions for a blue light-emitting element, (a) shows the refractive index n, extinction coefficient k, and film thickness d of each layer, and (b) shows when the film thickness of the transparent conductive layer is changed.
- the total L of the optical film thickness and the resonance wavelength ⁇ are shown.
- the material of the transparent conductive layer 4 is ITO (Indium Tin Oxide), and the material of the light emitting layer 7b is BP105 manufactured by Summation.
- the film thickness d of the transparent conductive layer 4 is 50 [nm] or more and 60 [nm] or less, and the optical film thickness at that time The total L is 218 [nm] or more and 238 [nm] or less.
- the film thickness d of the transparent conductive layer 4 is 95 [nm] or more and 105 [nm] or less, and the total optical film thickness L at that time is 310 [nm] or more and 330 [nm]. It becomes the following.
- FIG. 3 shows the design conditions of the red light emitting element.
- the material of the light emitting layer 7r is RP158 manufactured by Cymation.
- the material of the light emitting layer 7g is GP1200 made by Cymation.
- FIG. 4 is a diagram for comparing the light extraction efficiency and chromaticity of the light-emitting elements of the respective colors when designed with emphasis on chromaticity and when designed with emphasis on efficiency.
- the film thickness of the transparent conductive layer 4 when the chromaticity is important is 55 [nm]
- the film thickness of the transparent conductive layer 4 when the efficiency is important is 100 [nm].
- the chromaticity (x, y) is (0.13, 0.13) when the chromaticity is emphasized, while (0, 0) when the efficiency is emphasized. .13, 0.31).
- chromaticity (x, y) indicates a position on the CIE chromaticity diagram.
- the blue target chromaticity is set in the vicinity of (0.15, 0.06 to 0.09), so that the chromaticity-oriented case is closer to the target chromaticity than the efficiency-oriented case.
- the light extraction efficiency is 1.9 [cd / A] when the chromaticity is important, whereas it is 4.9 [cd / A] when the efficiency is important. That is, the light extraction efficiency is higher in the case where efficiency is emphasized than in the case where chromaticity is emphasized.
- the chromaticity (x, y) is (0.13, 0.09) when the chromaticity is emphasized. ), And (0.12, 0.09) when efficiency is emphasized.
- the color filter by providing the color filter, both chromaticity importance and efficiency importance can be brought close to the target chromaticity, and as a result, the color purity of the emitted color can be increased.
- the light extraction efficiency is 1.1 [cd / A] when the chromaticity is emphasized, and is 0.37 [cd / A] when the efficiency is emphasized.
- the color filter is provided, the light extraction efficiency is lowered as a result when importance is placed on efficiency compared to the case where importance is placed on chromaticity.
- the color filter (CF) transmittance in FIG. 4 is the ratio of the light extraction efficiency when the color filter is provided to the light extraction efficiency when the color filter is not provided.
- the CF transmittance is 56 [%] when emphasizing chromaticity, whereas the CF transmittance is 7.6 [%] when emphasizing efficiency. This indicates that the light extraction efficiency does not decrease so much even if a color filter is provided for chromaticity, but the light extraction efficiency is greatly reduced if a color filter is provided for efficiency.
- FIG. 2 although not as remarkable as the blue light emitting element, the same tendency is observed for the green and red light emitting elements.
- FIG. 5A and 5B are diagrams showing the relationship between the film thickness of the transparent conductive layer and the light extraction efficiency in each color light-emitting element, where FIG. 5A is a blue light-emitting element, FIG. 5B is a green light-emitting element, and FIG. A red light emitting element is shown.
- the light extraction efficiency is maximized in the film thickness range near 107 [nm].
- the color filter is provided, the light extraction efficiency is maximized in the film thickness range near 90 [nm], and the light extraction efficiency is slightly lowered at the film thickness of 107 [nm]. From this point, when designing with emphasis on chromaticity (the film thickness is in the vicinity of 90 [nm]), even if a color filter is provided, there is little decrease in light extraction efficiency.
- FIG. 6 shows the relationship between spectral intensity and wavelength for a blue light-emitting element, where (a) shows the spectral intensity of the light-emitting material, (b) shows the spectral intensity when designed with emphasis on chromaticity, and (c) shows importance on efficiency. Shows the spectral intensity when designed in. According to this, in the case where no color filter is provided, it can be seen that the half width of the spectrum is narrower when chromaticity is emphasized than when efficiency is emphasized, and there are fewer unnecessary wavelength components. For this reason, correction of a weak spectrum is sufficient to approach the target chromaticity (increasing the color purity of the emission color), and a color filter having a high transmittance can be used.
- the following can be said when attention is paid to the characteristics of the color filter when chromaticity is emphasized.
- the first wavelength region 460 nm or more and 480 nm or less
- the spectral intensity of the transmission through the color filter has a maximum value.
- the second wavelength region over 480 nm
- the third wavelength region less than 460 nm
- the spectral intensity of the transmission of the color filter takes a value smaller than the maximum value (see the one-dot chain line in FIG. 6B).
- the blue light incident from the transparent electrode 9 is a light component that is present in the second wavelength region (over 480 nm) and is not necessary for obtaining the target chromaticity, and its spectral intensity is higher than the maximum value. Transmission of a light component having a small value (spectrum intensity is less than about 0.6) is suppressed (see the difference between the broken line and the solid line in FIG. 6B). Further, transmission of light components existing in both the first wavelength region (460 nm or more and 480 nm or less) and the third wavelength region (less than 460 nm) is allowed (difference between the broken line and the solid line in FIG. 6B). reference).
- the film thickness d of the transparent conductive layer 4 is 50 [nm] or more and 60 [nm] or less, and the transparent conductive layer 4, the hole injection layer 5 and the hole transport layer 6 at that time It can be said that the total L of the optical film thickness is important. Therefore, in the blue light emitting element, the total optical thickness L of the transparent conductive layer 4, the hole injection layer 5, and the hole transport layer 6 may be set to 218 [nm] or more and 238 [nm] or less. As long as the above is satisfied, the same effect can be obtained.
- the light extraction efficiency can be increased while the color purity of the leaf light color is increased by setting the film thickness d of the transparent conductive layer 4 to 90 [nm].
- the film thickness d of the transparent conductive layer 4 by setting the film thickness d of the transparent conductive layer 4 to 141 [nm] or more and 149 [nm] or less, the light extraction efficiency can be improved while improving the color purity of the emission color.
- the total optical thickness L of the transparent conductive layer 4, the hole injection layer 5 and the hole transport layer 6 is 384 [nm] or more and 400 [nm]. As long as this condition is satisfied, the same effect can be obtained.
- the light extraction efficiency of each color light-emitting element is high, and the color purity of the light emission color is high, thereby reducing power consumption and improving image color reproducibility. can do.
- a functional layer including three layers of the transparent conductive layer 4, the hole injection layer 5, and the hole transport layer 6 is disposed between the light emitting layers 7 b, 7 g, 7 r and the reflective electrode 3.
- the light emitting element may have other configurations. Even in this case, the same effect can be obtained if the optical film thickness L of the functional layer disposed between the light emitting layers 7b, 7g, and 7r and the reflective electrode 3 is in the above range.
- the following items can be derived from the above results by a general analysis method of the resonator structure.
- the total optical thickness L [nm], resonance wavelength ⁇ [nm], and phase shift ⁇ [radian] of the transparent conductive layer 4, the hole injection layer 5, and the hole transport layer 6 are the following numbers: 1 is satisfied.
- n is an integer.
- phase shift ⁇ at the reflective electrode 3 can be obtained by the following formula 2.
- n 1 is the refractive index of the transparent conductive layer 4
- n 0 is the refractive index of the reflective electrode 3
- k 0 is the extinction coefficient of the reflective electrode 3.
- FIG. 2B shows the resonance wavelength ⁇ of the blue light emitting element
- FIG. 3B shows the resonance wavelength ⁇ of the red light emitting element.
- FIG. 2 (b) shows that chromaticity-oriented design can be achieved by regarding the wavelength of blue light as 256 [nm] or more and 280 [nm] or less. That is, when the total L [nm] of the optical film thickness is designed so as to satisfy Equation 1, the light extraction efficiency can be increased while increasing the color purity of the emitted color.
- the wavelength ⁇ at that time is a value between 256 [nm] and 280 [nm], and m is an integer.
- FIG. 3B shows that chromaticity-oriented design can be achieved by regarding the wavelength of red light as 452 [nm] or more and 470 [nm] or less. That is, when the total L [nm] of the optical film thickness is designed so as to satisfy Equation 1, the light extraction efficiency can be increased while increasing the color purity of the emitted color.
- the wavelength ⁇ at that time is a value between 452 [nm] and 470 [nm], and m is an integer.
- ⁇ Comparison of angular dependence of chromaticity> The inventors further compared the angle dependency of the chromaticity of the light emitting element between a case where the chromaticity is designed and a case where the efficiency is designed.
- FIG. 9A and 9B are diagrams showing the angle dependency of chromaticity when a blue light emitting element is designed with emphasis on chromaticity.
- FIG. 9A shows the film thickness of the transparent conductive layer being 50 [nm]
- FIG. 9B is transparent.
- the film thickness of the conductive layer is 55 [nm]
- (c) shows the case where the film thickness of the transparent conductive layer is 60 [nm].
- FIG. 10 is a diagram showing the angle dependency of chromaticity when a blue light-emitting element is designed with an emphasis on efficiency.
- FIG. 10A shows the film thickness of the transparent conductive layer of 95 [nm]
- FIG. 10A shows the film thickness of the transparent conductive layer of 95 [nm]
- the film thickness of a transparent conductive layer is 100 [nm]
- (c) shows the case where the film thickness of a transparent conductive layer is 105 [nm].
- the angle is 0 [deg] when the light emitting element is viewed from the front.
- 9 and 10 show the chromaticity deviation ⁇ CIE from the chromaticity when the angle is 0 [deg].
- the film thickness d of the transparent conductive layer 4 is 50 [nm] or more and 60 [nm] or less, that is, the total L of the optical film thicknesses of the transparent conductive layer 4, the hole injection layer 5, and the hole transport layer 6.
- the angle dependency of the chromaticity of the blue light-emitting element can be reduced.
- FIG. 11 is a diagram showing the angle dependency of chromaticity when a green light emitting element is designed with emphasis on chromaticity.
- FIG. 12 is a diagram showing the angle dependency of chromaticity when a green light emitting element is designed with emphasis on efficiency. As shown in FIGS. 11 and 12, even in the green light-emitting element, the angle dependency of the chromaticity of the green light-emitting element can be reduced by setting the film thickness d of the transparent conductive layer 4 to 90 [nm]. Can do.
- FIGS. 13A and 13B are diagrams showing the angle dependency of chromaticity when a red light emitting element is designed with emphasis on chromaticity.
- FIG. 13A shows the film thickness of the transparent conductive layer of 141 [nm], and FIG. The film thickness of the conductive layer is 144 [nm], and (c) shows the case where the film thickness of the transparent conductive layer is 149 [nm].
- FIG. 14 is a diagram showing the angle dependency of chromaticity when a red light-emitting element is designed with an emphasis on efficiency.
- FIG. 14A shows a film thickness of the transparent conductive layer of 131 [nm], and FIG. The case where the film thickness of a transparent conductive layer is 136 [nm] is shown.
- the film thickness d of the transparent conductive layer 4 is 141 [nm] or more and 149 [nm] or less, that is, the total L of the optical film thickness is 384 [nm].
- the thickness is 400 [nm] or less, the angle dependency of the chromaticity of the red light emitting element can be reduced.
- the chromaticity shift is relatively large when the film thickness d of the transparent conductive layer 4 is 149 [nm].
- the film thickness d of the transparent conductive layer 4 is 141 [nm] or more and 144 [nm] or less, that is, the total optical film thickness L is 384 [nm] or more and 390 [nm] or less.
- the substrate 1 is, for example, a TFT (Thin Film Transistor) substrate.
- the material of the substrate 1 include glass plates and quartz plates such as soda glass, non-fluorescent glass, phosphate glass, and borate glass, and acrylic resins, styrene resins, polycarbonate resins, epoxy resins, polyethylene, Examples thereof include plastic plates or plastic films such as polyester and silicone resin, and metal plates or foils such as alumina.
- the bank 2 only needs to be formed of an insulating material, and preferably has organic solvent resistance. Moreover, since the bank 2 may be subjected to an etching process, a baking process, or the like, it is preferable that the bank 2 be formed of a material having high resistance to these processes.
- the material of the bank 2 may be an organic material such as resin or an inorganic material such as glass.
- an acrylic resin, a polyimide resin, a novolac-type phenol resin, or the like can be used.
- As the inorganic material silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ), or the like can be used. it can.
- the reflective electrode 3 is electrically connected to the TFT disposed on the substrate 1, functions as a positive electrode of the light emitting element, and reflects light emitted from the light emitting layers 7b, 7g, and 7r toward the reflective electrode 3. It has the function to do.
- the reflective function may be exhibited by the constituent material of the reflective electrode 3 or may be exhibited by applying a reflective coating to the surface portion of the reflective electrode 3.
- the reflective electrode 3 is, for example, Ag (silver), APC (silver, palladium, copper alloy), ARA (silver, rubidium, gold alloy), MoCr (molybdenum and chromium alloy), NiCr (nickel and chromium alloy). ) Etc.
- the transparent conductive layer 4 is interposed between the reflective electrode 3 and the hole injection layer 5 to improve the bonding properties, and the reflective electrode 3 is naturally oxidized immediately after the formation of the reflective electrode 3 in the manufacturing process. Functions as a protective layer to prevent
- the material of the transparent conductive layer 4 may be formed of a conductive material having sufficient translucency with respect to the light generated in the light emitting layers 7b, 7g, 7r. For example, ITO, IZO (Indium Zinc Oxide), etc. Is preferred. This is because good conductivity can be obtained even if the film is formed at room temperature.
- the hole injection layer 5 has a function of injecting holes into the light emitting layers 7b, 7g, and 7r.
- an oxide of a transition metal such as tungsten oxide (WOx), molybdenum oxide (MoOx), or molybdenum tungsten oxide (MoxWyOz) is used.
- tungsten oxide WOx
- MoOx molybdenum oxide
- MoxWyOz molybdenum tungsten oxide
- PEDOT mixture of polythiophene and polystyrene sulfonic acid
- Examples of the material for the hole transport layer 6 include triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives described in JP-A-5-163488.
- Particularly preferred are a porphyrin compound, an aromatic tertiary amine compound and a styrylamine compound.
- Examples of materials for the light emitting layers 7b, 7g, and 7r include oxinoid compounds, perylene compounds, coumarin compounds, azacoumarin compounds, oxazole compounds, oxadiazole compounds, perinone compounds, pyrrolopyrrole compounds described in JP-A-5-163488.
- the transparent electrode 9 functions as a negative electrode of the light emitting element.
- the material of the transparent electrode 9 may be formed of a conductive material having sufficient translucency with respect to the light generated in the light emitting layers 7b, 7g, and 7r.
- a conductive material having sufficient translucency with respect to the light generated in the light emitting layers 7b, 7g, and 7r.
- ITO or IZO is preferable.
- the thin film sealing layer 10 has a function of preventing each layer sandwiched between the substrate 1 from being exposed to moisture or air.
- the material of the thin film sealing layer 10 is, for example, silicon nitride (SiN), silicon oxynitride (SiON), resin, or the like.
- the resin sealing layer 11 is formed by bonding a back panel composed of layers from the substrate 1 to the thin film sealing layer 10 and a front panel on which the color filters 12b, 12g, and 12r are formed, and exposing each layer to moisture and air. It has a function to prevent
- the material of the resin sealing layer 11 is, for example, a resin adhesive.
- ⁇ Color filter> The color filters 12b, 12g, and 12r have a function of correcting the chromaticity of the light emitted from the light emitting element.
- FIG. 15 illustrates functional blocks of a display device according to one embodiment of the present invention.
- FIG. 16 illustrates an appearance of a display device according to one embodiment of the present invention.
- the display device 15 includes an organic EL panel 16 and a drive control unit 17 electrically connected thereto.
- the organic EL panel 16 has the pixel structure shown in FIG.
- the drive control unit 17 includes drive circuits 18 to 21 that apply a voltage between the reflective electrode and the transparent electrode of each light emitting element, and a control circuit 22 that controls the operation of the drive circuits 18 to 21.
- 17 and 18 illustrate a method for manufacturing a display device according to one embodiment of the present invention.
- the reflective electrode 3 is formed on the substrate 1 by vapor deposition or sputtering (FIG. 17A).
- the transparent conductive layer 4 is formed on the reflective electrode 3 by vapor deposition or sputtering (FIG. 17B). At this time, the film thickness of the transparent conductive layer 4 is appropriately changed for each color of R, G, and B.
- a hole injection layer 5 is formed on the transparent conductive layer 4 by, for example, a vapor deposition method or a sputtering method, a bank 2 is formed, and further, a printing such as an inkjet method is performed on the hole injection layer 5.
- the hole transport layer 6 is formed by the method (FIG. 17C). At this time, the film thicknesses of the hole injection layer 5 and the hole transport layer 6 are the same for each color of R, G, and B.
- the light emitting layers 7b, 7g, and 7r are formed on the hole transport layer 6 by a printing method such as an inkjet method (FIG. 17D). At this time, the film thicknesses of the organic light emitting layers 7b, 7g, and 7r are appropriately changed for each color of R, G, and B.
- the electron transport layer 8 is formed on the light emitting layers 7b, 7g, and 7r by vapor deposition or sputtering (FIG. 18A). At this time, the thickness of the electron transport layer 8 is made the same for each color of R, G, and B.
- the transparent electrode 9 is formed on the electron transport layer 8 by vapor deposition or sputtering (FIG. 18B).
- the film thickness of the transparent electrode 9 is, for example, 90 nm or more and 110 nm or less.
- the thin film sealing layer 10 is formed on the transparent electrode 9 by vapor deposition or sputtering, and the substrate on which the color filters 12b, 12g, 12r are formed is bonded using the resin sealing layer 11 (FIG. 18). (C)).
- the film thickness of these sealing layers is, for example, 900 nm or more and 1100 nm or less.
- the display device can be manufactured through the above steps.
- the present invention can be used for an organic EL display, for example.
Abstract
Description
本発明の第1の態様に係る発光素子は、入射された光を反射する反射電極と、前記反射電極に対向して配置され、入射された光を透過する透明電極と、前記反射電極と前記透明電極との間に配置され、青色光を発光する発光層と、前記反射電極と前記発光層との間に配置された、1または2以上の層からなる機能層と、前記透明電極を挟んで前記発光層の反対側に配置されたカラーフィルタと、を備え、前記発光層から出射された青色光の一部が、前記機能層を通じて前記反射電極に入射されて前記反射電極により反射された後、前記機能層、前記発光層、前記透明電極および前記カラーフィルタを通じて外部に出射される第1光路と、前記発光層から出射された青色光の残りの一部が、前記反射電極側に進行することなく、前記透明電極側に進行し、前記透明電極および前記カラーフィルタを通じて外部に出射される第2光路と、が形成され、前記機能層の光学膜厚が、218[nm]以上238[nm]以下である。この構成により、青色光を発光する発光素子において、光取り出し効率の向上と発光色の色純度の向上を両立することができる。
[表示装置および発光素子の構成]
以下、本発明の一態様の具体例を、図面を参照して詳細に説明する。
[実験およびシミュレーション]
発明者らは、各色の発光素子の光取り出し効率および色度を、色度重視で設計した場合と効率重視で設計した場合とで比較した。
<条件>
図2は、青色の発光素子の設計条件を示し、(a)は各層の屈折率n、消衰係数kおよび膜厚dを示し、(b)は透明導電層の膜厚を変化させたときの光学膜厚の合計Lと共振波長λを示す。ここでは、透明導電層4の材料をITO(Indium Tin Oxide)とし、発光層7bの材料を、サメイション(SUMATION)社製のBP105としている。
<光取り出し効率および色度の比較>
図4は、各色の発光素子の光取り出し効率および色度を、色度重視で設計した場合と効率重視で設計した場合とで比較するための図である。
(1)透明電極9から入射した青色光のスペクトル強度が極大値を示す第1の波長領域(460nm以上480nm以下)において、カラーフィルタの透過のスペクトル強度が極大値を示す。その一方で、第1の波長領域よりも長波長側にある第2の波長領域(480nm超)、および、第1の波長領域よりも短波長側にある第3の波長領域(460nm未満)において、カラーフィルタの透過のスペクトル強度がその極大値よりも小さい値を取る(図6(b)の一点鎖線参照)。
(2)透明電極9から入射した青色光について、第2の波長領域(480nm超)に存在し、目標色度を得るために不要となる光成分であって、そのスペクトル強度が極大値よりも小さい値を示す光成分(スペクトル強度が略0.6未満)の透過を抑制している(図6(b)の破線と実線の差分参照)。また、第1の波長領域(460nm以上480nm以下)および第3の波長領域(460nm未満)の両領域に存在する光成分の透過を許容している(図6(b)の破線と実線の差分参照)。
<結論>
以上より、青色の発光素子では、透明導電層4の膜厚dを、50[nm]以上60[nm]以下とすることにより、発光色の色純度を高めながら光取り出し効率を高めることができる。なお、この効果は、直接光と反射光の干渉の影響により得られるものと考えられる。そうすると、透明導電層4の膜厚dが50[nm]以上60[nm]以下であることが重要なのではなく、そのときの透明導電層4、正孔注入層5および正孔輸送層6の光学膜厚の合計Lが重要であると言える。したがって、青色の発光素子では、透明導電層4、正孔注入層5および正孔輸送層6の光学膜厚の合計Lを、218[nm]以上238[nm]以下とすればよく、この条件を満たす限り、同様の効果を得ることができる。
<色度の角度依存性の比較>
発明者らは、さらに、発光素子の色度の角度依存性を、色度重視で設計した場合と効率重視で設計した場合とで比較した。
[各層の具体例]
<基板>
基板1は、例えば、TFT(Thin Film Transistor)基板である。基板1の材料は、例えば、ソーダガラス、無蛍光ガラス、燐酸系ガラス、硼酸系ガラスなどのガラス板及び石英板、並びに、アクリル系樹脂、スチレン系樹脂、ポリカーボネート系樹脂、エポキシ系樹脂、ポリエチレン、ポリエステル、シリコーン系樹脂などのプラスチック板又はプラスチックフィルム、並びに、アルミナなどの金属板又は金属ホイルなどである。
バンク2は、絶縁性材料により形成されていれば良く、有機溶剤耐性を有することが好ましい。また、バンク2はエッチング処理、ベーク処理などされることがあるので、それらの処理に対する耐性の高い材料で形成されることが好ましい。バンク2の材料は、樹脂などの有機材料であっても、ガラスなどの無機材料であっても良い。有機材料として、アクリル系樹脂、ポリイミド系樹脂、ノボラック型フェノール樹脂などを使用することができ、無機材料として、シリコンオキサイド(SiO2)、シリコンナイトライド(Si3N4)などを使用することができる。
反射電極3は、基板1に配されたTFTに電気的に接続されており、発光素子の正極として機能すると共に、発光層7b,7g,7rから反射電極3に向けて出射された光を反射する機能を有する。反射機能は、反射電極3の構成材料により発揮されるものでもよいし、反射電極3の表面部分に反射コーティングを施すことにより発揮されるものでもよい。反射電極3は、例えば、Ag(銀)、APC(銀、パラジウム、銅の合金)、ARA(銀、ルビジウム、金の合金)、MoCr(モリブデンとクロムの合金)、NiCr(ニッケルとクロムの合金)等で形成されている。
<透明導電層>
透明導電層4は、反射電極3と正孔注入層5との間に介在してこれらの接合性を良好にすると共に、製造過程において反射電極3の形成直後に反射電極3が自然酸化するのを防止する保護層として機能する。透明導電層4の材料は、発光層7b,7g,7rで発生した光に対して十分な透光性を有する導電性材料により形成されればよく、例えば、ITOやIZO(Indium Zinc Oxide)などが好ましい。室温で成膜しても良好な導電性を得ることができるからである。
<正孔注入層>
正孔注入層5は、正孔を発光層7b,7g,7rに注入する機能を有する。例えば、酸化タングステン(WOx)、酸化モリブデン(MoOx)、酸化モリブデンタングステン(MoxWyOz)などの遷移金属の酸化物で形成される。遷移金属の酸化物で形成することで、電圧-電流密度特性を向上させ、また、電流密度を高めて発光強度を高めることができる。なお、これ以外に、従来から知られているPEDOT(ポリチオフェンとポリスチレンスルホン酸との混合物)などの導電性ポリマー材料を用いてもよい。
<正孔輸送層>
正孔輸送層6の材料は、例えば、特開平5-163488号に記載のトリアゾール誘導体、オキサジアゾール誘導体、イミダゾール誘導体、ポリアリールアルカン誘導体、ピラゾリン誘導体及びピラゾロン誘導体、フェニレンジアミン誘導体、アリールアミン誘導体、アミノ置換カルコン誘導体、オキサゾール誘導体、スチリルアントラセン誘導体、フルオレノン誘導体、ヒドラゾン誘導体、スチルベン誘導体、ポリフィリン化合物、芳香族第三級アミン化合物及びスチリルアミン化合物、ブタジエン化合物、ポリスチレン誘導体、ヒドラゾン誘導体、トリフェニルメタン誘導体、テトラフェニルベンジン誘導体である。特に好ましくは、ポリフィリン化合物、芳香族第三級アミン化合物及びスチリルアミン化合物である。
<発光層>
発光層7b,7g,7rの材料は、例えば、特開平5-163488号公報に記載のオキシノイド化合物、ペリレン化合物、クマリン化合物、アザクマリン化合物、オキサゾール化合物、オキサジアゾール化合物、ペリノン化合物、ピロロピロール化合物、ナフタレン化合物、アントラセン化合物、フルオレン化合物、フルオランテン化合物、テトラセン化合物、ピレン化合物、コロネン化合物、キノロン化合物及びアザキノロン化合物、ピラゾリン誘導体及びピラゾロン誘導体、ローダミン化合物、クリセン化合物、フェナントレン化合物、シクロペンタジエン化合物、スチルベン化合物、ジフェニルキノン化合物、スチリル化合物、ブタジエン化合物、ジシアノメチレンピラン化合物、ジシアノメチレンチオピラン化合物、フルオレセイン化合物、ピリリウム化合物、チアピリリウム化合物、セレナピリリウム化合物、テルロピリリウム化合物、芳香族アルダジエン化合物、オリゴフェニレン化合物、チオキサンテン化合物、アンスラセン化合物、シアニン化合物、アクリジン化合物、8-ヒドロキシキノリン化合物の金属鎖体、2-ビピリジン化合物の金属鎖体、シッフ塩とIII族金属との鎖体、オキシン金属鎖体、希土類鎖体等の蛍光物質である。
<電子輸送層>
電子輸送層8の材料は、例えば、特開平5-163488号公報のニトロ置換フルオレノン誘導体、チオピランジオキサイド誘導体、ジフェキノン誘導体、ペリレンテトラカルボキシル誘導体、アントラキノジメタン誘導体、フレオレニリデンメタン誘導体、アントロン誘導体、オキサジアゾール誘導体、ペリノン誘導体、キノリン錯体誘導体である。
<透明電極>
透明電極9は、発光素子の負極として機能する。透明電極9の材料は、発光層7b,7g,7rで発生した光に対して十分な透光性を有する導電性材料により形成されればよく、例えば、ITOやIZOなどが好ましい。
<薄膜封止層>
薄膜封止層10は、基板1との間に挟まれた各層が水分や空気に晒されることを防止する機能を有する。薄膜封止層10の材料は、例えば、窒化シリコン(SiN)、酸窒化シリコン(SiON)や樹脂等である。
<樹脂封止層>
樹脂封止層11は、基板1から薄膜封止層10までの各層からなる背面パネルと、カラーフィルタ12b,12g,12rが形成された前面パネルとを貼り合わせるとともに、各層が水分や空気に晒されることを防止する機能を有する。樹脂封止層11の材料は、例えば、樹脂接着剤等である。
<カラーフィルタ>
カラーフィルタ12b,12g,12rは、発光素子から出射された光の色度を矯正する機能を有する。
[表示装置]
図15は、本発明の一態様に係る表示装置の機能ブロックを示す図である。図16は、本発明の一態様に係る表示装置の外観を例示する図である。表示装置15は、有機ELパネル16と、これに電気的に接続された駆動制御部17とを備える。有機ELパネル16は、図1に示す画素構造を有するものである。駆動制御部17は、各発光素子の反射電極と透明電極との間に電圧を印加する駆動回路18~21と、駆動回路18~21の動作を制御する制御回路22とからなる。
[表示装置の製造方法]
次に、表示装置の製造方法を説明する。図17、図18は、本発明の一態様に係る表示装置の製造方法を説明するための図である。
2 バンク
3 反射電極
4 透明導電層
5 正孔注入層
6 正孔輸送層
7b,7g,7r 発光層
8 電子輸送層
9 透明電極
10 薄膜封止層
11 樹脂封止層
12b,12g,12r カラーフィルタ
15 表示装置
Claims (9)
- 入射された光を反射する反射電極と、
前記反射電極に対向して配置され、入射された光を透過する透明電極と、
前記反射電極と前記透明電極との間に配置され、青色光を発光する発光層と、
前記反射電極と前記発光層との間に配置された、1または2以上の層からなる機能層と、
前記透明電極を挟んで前記発光層の反対側に配置されたカラーフィルタと、
を備え、
前記発光層から出射された青色光の一部が、前記機能層を通じて前記反射電極に入射されて前記反射電極により反射された後、前記機能層、前記発光層、前記透明電極および前記カラーフィルタを通じて外部に出射される第1光路と、
前記発光層から出射された青色光の残りの一部が、前記反射電極側に進行することなく、前記透明電極側に進行し、前記透明電極および前記カラーフィルタを通じて外部に出射される第2光路と、が形成され、
前記機能層の光学膜厚が、218[nm]以上238[nm]以下であること
を特徴とする発光素子。 - 入射された光を反射する反射電極と、
前記反射電極に対向して配置され、入射された光を透過する透明電極と、
前記反射電極と前記透明電極との間に配置され、青色光を発光する発光層と、
前記反射電極と前記発光層との間に配置された、1または2以上の層からなる機能層と、
前記透明電極を挟んで前記発光層の反対側に配置されたカラーフィルタと、
を備え、
前記発光層から出射された青色光の一部が、前記機能層を通じて前記反射電極に入射されて前記反射電極により反射された後、前記機能層、前記発光層、前記透明電極および前記カラーフィルタを通じて外部に出射される第1光路と、
前記発光層から出射された青色光の残りの一部が、前記反射電極側に進行することなく、前記透明電極側に進行し、前記透明電極および前記カラーフィルタを通じて外部に出射される第2光路と、が形成され、
前記機能層の光学膜厚L[nm]が、
を満たすことを特徴とする発光素子。 - 前記カラーフィルタは、
前記透明電極から入射した青色光のスペクトル強度が極大値を示す第1の波長領域において、その透過のスペクトル強度が極大値を示し、その一方、前記第1の波長領域より長波長側にある第2の波長領域、および、前記第1の波長領域より短波長側にある第3の波長領域において、その透過のスペクトル強度が前記極大値よりも小さい値を取り、
かつ、
前記透明電極から入射した青色光について、
前記第2の波長領域に存在し、目標色度を得るために不要となる光成分であって、そのスペクトル強度が極大値よりも小さい値を示す光成分の透過を抑制し、
前記第1の波長領域および第3の波長領域の両領域に存在する光成分の透過を許容するものであること
を特徴とする請求項1または2に記載の発光素子。 - 入射された光を反射する反射電極と、
前記反射電極に対向して配置され、入射された光を透過する透明電極と、
前記反射電極と前記透明電極との間に配置され、赤色光を発光する発光層と、
前記反射電極と前記発光層との間に配置された、1または2以上の層からなる機能層と、
前記透明電極を挟んで前記発光層の反対側に配置されたカラーフィルタと、
を備え、
前記発光層から出射された赤色光の一部が、前記機能層を通じて前記反射電極に入射されて前記反射電極により反射された後、前記機能層、前記発光層、前記透明電極および前記カラーフィルタを通じて外部に出射される第1光路と、
前記発光層から出射された赤色光の残りの一部が、前記反射電極側に進行することなく、前記透明電極側に進行し、前記透明電極および前記カラーフィルタを通じて外部に出射される第2光路と、が形成され、
前記機能層の光学膜厚が、384[nm]以上400[nm]以下であること
を特徴とする発光素子。 - 入射された光を反射する反射電極と、
前記反射電極に対向して配置され、入射された光を透過する透明電極と、
前記反射電極と前記透明電極との間に配置され、赤色光を発光する発光層と、
前記反射電極と前記発光層との間に配置され、1または2以上の層からなる機能層と、
前記透明電極を挟んで前記発光層の反対側に配置されたカラーフィルタと、
を備え、
前記発光層から出射された赤色光の一部が、前記機能層を通じて前記反射電極に入射されて前記反射電極により反射された後、前記機能層、前記発光層、前記透明電極および前記カラーフィルタを通じて外部に出射される第1光路と、
前記発光層から出射された赤色光の残りの一部が、前記反射電極側に進行することなく、前記透明電極側に進行し、前記透明電極および前記カラーフィルタを通じて外部に出射される第2光路と、が形成され、
前記機能層の光学膜厚L[nm]が、
を満たすことを特徴とする発光素子。 - 基板上に、青、緑、赤に発光する発光素子が配列された表示装置であって、
前記青に発光する発光素子が、請求項1に記載の発光素子であること
を特徴とする表示装置。 - さらに、前記赤に発光する発光素子が、請求項4に記載の発光素子であること
を特徴とする請求項6に記載の表示装置。 - 基板上に、青、緑、赤に発光する発光素子が配列された表示装置であって、
前記青に発光する発光素子が、請求項2に記載の発光素子であること
を特徴とする表示装置。 - さらに、前記赤に発光する発光素子が、請求項5に記載の発光素子であること
を特徴とする請求項8に記載の表示装置。
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