WO2011037079A9 - 炭化珪素インゴット、炭化珪素基板、それらの製造方法、坩堝、および半導体基板 - Google Patents
炭化珪素インゴット、炭化珪素基板、それらの製造方法、坩堝、および半導体基板 Download PDFInfo
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- WO2011037079A9 WO2011037079A9 PCT/JP2010/066155 JP2010066155W WO2011037079A9 WO 2011037079 A9 WO2011037079 A9 WO 2011037079A9 JP 2010066155 W JP2010066155 W JP 2010066155W WO 2011037079 A9 WO2011037079 A9 WO 2011037079A9
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 333
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 333
- 239000000758 substrate Substances 0.000 title claims description 279
- 238000004519 manufacturing process Methods 0.000 title claims description 73
- 238000000034 method Methods 0.000 title claims description 47
- 239000004065 semiconductor Substances 0.000 title claims description 41
- -1 crucible Substances 0.000 title 1
- 239000002994 raw material Substances 0.000 claims description 44
- 238000005520 cutting process Methods 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910002804 graphite Inorganic materials 0.000 claims description 8
- 239000010439 graphite Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 230000010354 integration Effects 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 238000003763 carbonization Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 51
- 239000007789 gas Substances 0.000 description 19
- 239000007787 solid Substances 0.000 description 19
- 238000012545 processing Methods 0.000 description 18
- 239000012535 impurity Substances 0.000 description 17
- 230000002093 peripheral effect Effects 0.000 description 15
- 239000011343 solid material Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 238000000859 sublimation Methods 0.000 description 9
- 230000008022 sublimation Effects 0.000 description 9
- 238000005092 sublimation method Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 238000005498 polishing Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 239000002699 waste material Substances 0.000 description 6
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000010008 shearing Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/19—Sheets or webs edge spliced or joined
- Y10T428/192—Sheets or webs coplanar
Definitions
- a SiC substrate with few defects is usually manufactured by cutting out from a substantially cylindrical (substantially circular when viewed from the growth surface) SiC ingot obtained by (0001) plane growth in which stacking faults are unlikely to occur. For this reason, when manufacturing a rectangular SiC substrate having the (0001) plane as the main surface, the substrate is cut out substantially parallel to the growth surface. However, since the portion other than the rectangle inscribed in the SiC ingot is not used for the SiC substrate, the SiC ingot is wasted. That is, if a SiC substrate is produced from a SiC ingot, a lot of SiC ingot is wasted. For this reason, there exists a problem that cost is required in order to manufacture a SiC substrate.
- a substantially rectangular parallelepiped SiC ingot is realized.
- a square SiC substrate can be manufactured by cutting out in a direction parallel to or intersecting the bottom surface.
- an SiC substrate having a desired plane orientation as a principal plane can be easily formed based on any one of the side face, the bottom face and the growth plane. .
- the SiC ingot preferably further includes a seed substrate formed so as to be in contact with the bottom surface, and a main surface in contact with the bottom surface of the seed substrate has a ⁇ 0001 ⁇ plane or an inclination of 10 ° or less with respect to this surface.
- FIG. 3 is a sectional view taken along line III-III in FIG. 2. It is sectional drawing which shows schematically the other crucible in Embodiment 1 of this invention. It is sectional drawing which shows schematically the other crucible in Embodiment 1 of this invention. It is sectional drawing which shows schematically the other crucible in Embodiment 1 of this invention. It is sectional drawing which shows schematically the other crucible in Embodiment 1 of this invention. It is sectional drawing which shows schematically the other crucible in Embodiment 1 of this invention. It is sectional drawing which shows roughly the process of manufacturing the SiC ingot in Embodiment 1 of this invention.
- FIG. 8 is a sectional view taken along line VIII-VIII in FIG.
- FIG. It is a schematic flowchart of the process of forming the coupling
- FIG. 1 is a perspective view schematically showing a SiC ingot according to Embodiment 1 of the present invention. First, SiC ingot 10a according to one embodiment of the present invention will be described with reference to FIG.
- the SiC ingot 10 a includes a seed substrate 11 and a crystal 12 formed on the seed substrate 11.
- the crystal 12 includes a bottom surface 12a, four side surfaces 12b, 12c, 12d, and 12e, and a growth surface 12f.
- the growth surface 12f is connected to the four side surfaces 12b, 12c, 12d, and 12e, and is located on the opposite side to the bottom surface 12a.
- the growth surface 12f extends in a direction intersecting with the extending direction of the four side surfaces 12b, 12c, 12d, and 12e.
- the growth surface 12 f is a surface that becomes the outermost surface when the crystal 12 is grown on the seed substrate 11.
- the growth surface 12f of the present embodiment is raised in the direction opposite to the bottom surface 12a. In other words, the growth surface 12f is not a horizontal plane but rounded.
- the crucible 100 includes a first portion 101 and a second portion 102.
- the first portion 101 forms a first region R1 in which the raw material is disposed.
- the first portion 101 is positioned relatively upward.
- the second part 102 is connected to the first part 101.
- the second portion 102 forms a second region R2 in which the seed substrate is disposed inside so as to face the raw material.
- the second portion 102 is positioned relatively below.
- the first portion 101 and the second portion 102 are integrally formed.
- the first portion 101 may have a main body for placing the seed substrate and a lid, and may be formed so that the main body and the lid can be separated.
- the outer peripheral surface of the first portion 101 and the outer peripheral surface of the second portion 102 are located on the same curved surface or the same plane.
- the shape may be different.
- the present inventor has earnestly studied a means for reducing the cost when manufacturing a SiC substrate having a square planar shape from a SiC ingot.
- the present invention has been completed, in which the SiC ingot 10a, which is a substantially rectangular parallelepiped in crystal growth, is manufactured.
- FIG. 9 is a perspective view schematically showing SiC ingot 10b according to the second embodiment of the present invention.
- SiC ingot 10b in the present embodiment basically has the same configuration as SiC ingot 10a in the first embodiment shown in FIG. 1, except that growth surface 12f is processed. Is different.
- the growth surface 12f in the present embodiment is a flat surface.
- Such a growth surface 12f is preferably a ⁇ 0001 ⁇ plane, a ⁇ 1-100 ⁇ plane, a ⁇ 11-20 ⁇ plane, or a plane having an inclination of 10 ° or less with respect to these planes.
- the main surface 20a preferably has an off angle of 50 ° to 65 ° with respect to the ⁇ 0001 ⁇ plane.
- MOSFET Metal Oxide Semiconductor Field Effect Transistor
- the defect density of the growth layer 130 may be larger than the defect density of the SiC substrates 111 to 119, and therefore, the size of the joint portion 150 substantially consisting of the growth layer 130 is larger than that of each of the SiC substrates 111 to 119. Despite being large, it can be easily formed.
- the micropipe density of growth layer 130 may be greater than the micropipe density of SiC substrates 111-119.
- the threading screw dislocation density of the growth layer 130 may be larger than the threading screw dislocation density of the SiC substrates 111 to 119.
- the threading edge dislocation density of the growth layer 130 may be larger than the threading edge dislocation density of the SiC substrates 111 to 119.
- the off angle of surface F1 with respect to the ⁇ 0001 ⁇ plane of SiC substrate 111 is not less than 50 ° and not more than 65 °
- the off angle of surface F2 with respect to the ⁇ 0001 ⁇ plane of SiC substrate 112 is not less than 50 ° and not more than 65 °. It is.
- the step of arranging SiC substrates 111 and 112 is performed such that the shortest distance between SiC substrates 111 and 112 is 1 mm or less.
- growth layer 130 can be formed so as to more reliably connect back surface B1 of SiC substrate 111 and back surface B2 of SiC substrate 112.
- the inclination of the crystal plane of the growth layer 130 on the back surface B1 is within 10 ° with respect to the crystal surface of the back surface B1.
- the inclination of the crystal plane of the growth layer 130 on the back surface B2 is within 10 ° with respect to the crystal surface of the back surface B2.
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Abstract
Description
図1は、本発明の実施の形態1におけるSiCインゴットを概略的に示す斜視図である。はじめに図1を参照して、本発明の一実施の形態のSiCインゴット10aについて説明する。
図9は、本発明の実施の形態2のSiCインゴット10bを概略的に示す斜視図である。図9に示すように、本実施の形態におけるSiCインゴット10bは、基本的には図1に示す実施の形態1のSiCインゴット10aと同様の構成を備えているが、成長面12fが加工されている点において異なる。本実施の形態における成長面12fは、平坦な面である。このような成長面12fは、{0001}面、{1-100}面、{11-20}面、またはこれらの面に対して10°以内の傾きを有する面であることが好ましい。
図10は、本発明の実施の形態3におけるSiCインゴット10cを概略的に示す斜視図である。図10に示すように、本実施の形態におけるSiCインゴット10cは、基本的には図1に示す実施の形態1のSiCインゴット10aと同様の構成を備えているが、種基板11を備えていない点において異なる。
図11は、本発明の実施の形態4におけるSiCインゴット10dを概略的に示す斜視図である。図11に示すように、本実施の形態におけるSiCインゴット10dは、基本的には図9に示す実施の形態2のSiCインゴット10bと同様の構成を備えているが、種基板11を備えていない点において異なる。
図12は、本発明の実施の形態5のSiC基板を概略的に示す斜視図である。図12を参照して、本実施の形態におけるSiC基板20を説明する。
図14および図15を参照して、本実施の形態の半導体基板180は、単結晶構造を有する複数のSiC基板111~119(炭化珪素基板)と、結合部150とを有する。SiC基板111~119は、実施の形態5のSiC基板20である。結合部150は、SiCからなる成長層130を含み、本実施の形態においては実質的に成長層130からなる。成長層130は、SiC基板111~119の裏面(図14に示される面と反対の面)を互いにつないでおり、これによりSiC基板111~119は互いに固定されている。SiC基板111~119のそれぞれは同一平面上において露出した表面を有し、たとえばSiC基板111および112のそれぞれは、表面F1およびF2(図15)を有する。これにより半導体基板180はSiC基板111~119の各々に比して大きな表面を有する。よってSiC基板111~119の各々を単独で用いる場合に比して、半導体基板180を用いる場合、SiCを用いた半導体装置をより効率よく製造することができる。
次に裏面B1およびB2を互いにつなぐ結合部150(図15)が形成される(図16:ステップS30)。この結合部150を形成する工程は、成長層130(図15)を形成する工程を含む。この成長層130を形成する工程には、昇華法が用いられ、好ましくは近接昇華法が用いられる。以下にこの結合部150を形成する工程について詳しく説明する。
Claims (12)
- 4つの辺を有する底面(12a)と、
前記底面(12a)から、前記底面(12a)の延びる方向と交差する方向に延びる4つの側面(12b、12c、12d、12e)と、
前記側面(12b、12c、12d、12e)と接続されるとともに、前記底面(12a)と反対側に位置する成長面(12f)とを備えた、炭化珪素インゴット(10a、10b、10c、10d)。 - 前記底面(12a)、前記側面(12b、12c、12d、12e)および前記成長面(12f)の少なくともいずれかは、{0001}面、{1-100}面、{11-20}面、またはこれらの面に対して10°以内の傾きを有する面である、請求の範囲第1項に記載の炭化珪素インゴット(10a、10b、10c、10d)。
- 前記底面(12a)に接するように形成された種基板(11)をさらに備え、
前記種基板(11)において前記底面(12a)と接する主面(11a)が、{0001}面、またはこの面に対して10°以内の傾きを有する、請求の範囲第1項に記載の炭化珪素インゴット(10a、10b、10c、10d)。 - 請求の範囲第1項に記載の炭化珪素インゴット(10a、10b、10c、10d)から作製された、炭化珪素基板(20)。
- {0001}面に対するオフ角が50°以上65°以下である主面(20a)を有する、請求の範囲第4項に記載の炭化珪素基板(20)。
- 原料(17)を内部に配置する領域を形成する第1の部分(101)と、
前記第1の部分(101)と接続され、前記原料(17)と対向するように種基板(11)を内部に配置する領域を形成する第2の部分(102)とを備え、
前記第2の部分(102)の断面形状は四角形または面取りされた四角形である、坩堝(100)。 - 前記第1および第2の部分(101、102)は、グラファイトである、請求の範囲第6項に記載の坩堝(100)。
- 請求の範囲第6項に記載の坩堝(100)を用いて炭化珪素インゴット(10a、10b、10c、10d)を製造する方法であって、
前記第1の部分(101)の内部に原料(17)を配置する工程と、
前記第2の部分(102)の内部に種基板(11)を配置する工程と、
前記原料(17)を加熱することにより昇華させて、前記種基板(11)に原料ガスを析出することにより炭化珪素インゴット(10a、10b、10c、10d)を成長する工程とを備えた、炭化珪素インゴット(10a、10b、10c、10d)の製造方法。 - 前記坩堝(100)の前記第2の部分(102)の断面形状の前記四角形または面取りされた四角形の各辺のうちの少なくとも1つの辺は、前記成長する工程で成長する前記炭化珪素インゴット(10a、10b、10c、10d)の<0001>方向、<1-100>方向、<11-20>方向、またはこれらの方向に対して10°以内の傾きを有する方向である、請求の範囲第8項に記載の炭化珪素インゴット(10a、10b、10c、10d)の製造方法。
- 請求の範囲第8項に記載の炭化珪素インゴットの製造方法により炭化珪素インゴット(10a、10b、10c、10d)を製造する工程と、
前記炭化珪素インゴット(10a、10b、10c、10d)から炭化珪素基板(20)を切り出す工程とを備えた、炭化珪素基板(20)の製造方法。 - 前記切り出す工程では、前記炭化珪素インゴット(10a、10b、10c、10d)からワイヤーソーを用いて前記炭化珪素基板(20)を切り出す、請求の範囲第10項に記載の炭化珪素基板(20)の製造方法。
- 請求の範囲第4項に記載の炭化珪素基板(20)を複数同一平面上に並べて、一体化処理をすることにより得られる、半導体基板(180)。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA2763055A CA2763055A1 (en) | 2009-09-24 | 2010-09-17 | Silicon carbide ingot, silicon carbide substrate, manufacturing method thereof, crucible, and semiconductor substrate |
US13/375,287 US20120070605A1 (en) | 2009-09-24 | 2010-09-17 | Silicon carbide ingot, silicon carbide substrate, manufacturing method thereof, crucible, and semiconductor substrate |
EP10818752A EP2482307A1 (en) | 2009-09-24 | 2010-09-17 | Silicon carbide ingot, silicon carbide substrate, methods for manufacturing the ingot and the substrate, crucible, and semiconductor substrate |
CN2010800426201A CN102549715A (zh) | 2009-09-24 | 2010-09-17 | 碳化硅晶锭、碳化硅衬底及其制造方法、坩锅以及半导体衬底 |
JP2011532987A JPWO2011037079A1 (ja) | 2009-09-24 | 2010-09-17 | 炭化珪素インゴット、炭化珪素基板、それらの製造方法、坩堝、および半導体基板 |
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US (1) | US20120070605A1 (ja) |
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JP5157843B2 (ja) * | 2007-12-04 | 2013-03-06 | 住友電気工業株式会社 | 炭化ケイ素半導体装置およびその製造方法 |
CN102160143B (zh) | 2009-05-11 | 2013-05-29 | 住友电气工业株式会社 | 制造半导体衬底的方法 |
JP2013008769A (ja) * | 2011-06-23 | 2013-01-10 | Sumitomo Electric Ind Ltd | 炭化珪素基板の製造方法 |
JP5403092B2 (ja) * | 2012-03-22 | 2014-01-29 | 株式会社豊田中央研究所 | 高耐熱部材およびその製造方法 |
US8860040B2 (en) | 2012-09-11 | 2014-10-14 | Dow Corning Corporation | High voltage power semiconductor devices on SiC |
KR101923673B1 (ko) * | 2012-09-13 | 2018-11-29 | 서울바이오시스 주식회사 | 질화갈륨계 반도체 소자를 제조하는 방법 |
US9018639B2 (en) | 2012-10-26 | 2015-04-28 | Dow Corning Corporation | Flat SiC semiconductor substrate |
US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
US9017804B2 (en) | 2013-02-05 | 2015-04-28 | Dow Corning Corporation | Method to reduce dislocations in SiC crystal growth |
US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
US8940614B2 (en) | 2013-03-15 | 2015-01-27 | Dow Corning Corporation | SiC substrate with SiC epitaxial film |
JP6147543B2 (ja) * | 2013-04-02 | 2017-06-14 | 株式会社豊田中央研究所 | SiC単結晶及びその製造方法 |
JP6233058B2 (ja) * | 2013-09-25 | 2017-11-22 | 住友電気工業株式会社 | 炭化珪素半導体基板の製造方法 |
CN103489752A (zh) * | 2013-09-26 | 2014-01-01 | 中国科学院半导体研究所 | 截面为多边形的晶棒及衬底片表面取向的标识方法 |
JP6119564B2 (ja) | 2013-11-08 | 2017-04-26 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
JP6100233B2 (ja) | 2014-12-26 | 2017-03-22 | 株式会社東芝 | 半導体装置 |
JP6690983B2 (ja) * | 2016-04-11 | 2020-04-28 | 株式会社ディスコ | ウエーハ生成方法及び実第2のオリエンテーションフラット検出方法 |
KR102187449B1 (ko) * | 2019-05-28 | 2020-12-11 | 에스케이씨 주식회사 | 탄화규소 잉곳의 제조방법, 탄화규소 잉곳 및 이의 성장 시스템 |
KR102104751B1 (ko) * | 2019-06-17 | 2020-04-24 | 에스케이씨 주식회사 | 탄화규소 잉곳 및 이의 제조방법 |
KR102276450B1 (ko) | 2019-10-29 | 2021-07-12 | 에스케이씨 주식회사 | 탄화규소 잉곳의 제조방법, 탄화규소 웨이퍼의 제조방법 및 이의 성장 시스템 |
KR102284879B1 (ko) | 2019-10-29 | 2021-07-30 | 에스케이씨 주식회사 | 탄화규소 웨이퍼 및 탄화규소 웨이퍼의 제조방법 |
CN111501094A (zh) * | 2020-05-15 | 2020-08-07 | 南通大学 | 一种减少莫桑石中针状包裹体的莫桑石制备方法 |
US20230203708A1 (en) * | 2020-06-02 | 2023-06-29 | Senic Inc. | Silicon carbide ingot manufacturing method, silicon carbide ingots, and growth system therefor |
EP3943644A1 (en) * | 2020-07-21 | 2022-01-26 | SiCrystal GmbH | Sic crystals with an optimal orientation of lattice planes for fissure reduction and method of producing same |
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JP3487254B2 (ja) * | 2000-03-10 | 2004-01-13 | 日新電機株式会社 | 単結晶SiC及びその製造方法 |
JP2002015619A (ja) * | 2000-06-29 | 2002-01-18 | Kyocera Corp | 導電性材及びそれを用いた耐プラズマ部材及び半導体製造用装置 |
JP4219800B2 (ja) * | 2003-12-22 | 2009-02-04 | 株式会社豊田中央研究所 | SiC単結晶の製造方法 |
JP5068423B2 (ja) * | 2004-10-13 | 2012-11-07 | 新日本製鐵株式会社 | 炭化珪素単結晶インゴット、炭化珪素単結晶ウェハ及びその製造方法 |
JP4388538B2 (ja) * | 2006-09-21 | 2009-12-24 | 新日本製鐵株式会社 | 炭化珪素単結晶製造装置 |
JP4748067B2 (ja) * | 2007-01-15 | 2011-08-17 | 株式会社デンソー | 炭化珪素単結晶の製造方法および製造装置 |
JP2008280207A (ja) * | 2007-05-10 | 2008-11-20 | Matsushita Electric Ind Co Ltd | SiC単結晶基板の製造方法 |
JP5157843B2 (ja) * | 2007-12-04 | 2013-03-06 | 住友電気工業株式会社 | 炭化ケイ素半導体装置およびその製造方法 |
-
2010
- 2010-09-17 CN CN2010800426201A patent/CN102549715A/zh active Pending
- 2010-09-17 CA CA2763055A patent/CA2763055A1/en not_active Abandoned
- 2010-09-17 KR KR1020117029809A patent/KR20120024767A/ko not_active Application Discontinuation
- 2010-09-17 US US13/375,287 patent/US20120070605A1/en not_active Abandoned
- 2010-09-17 EP EP10818752A patent/EP2482307A1/en not_active Withdrawn
- 2010-09-17 WO PCT/JP2010/066155 patent/WO2011037079A1/ja active Application Filing
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Also Published As
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WO2011037079A1 (ja) | 2011-03-31 |
US20120070605A1 (en) | 2012-03-22 |
CN102549715A (zh) | 2012-07-04 |
TW201132812A (en) | 2011-10-01 |
EP2482307A1 (en) | 2012-08-01 |
JPWO2011037079A1 (ja) | 2013-02-21 |
CA2763055A1 (en) | 2011-03-31 |
KR20120024767A (ko) | 2012-03-14 |
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