WO2011036900A1 - 加圧モジュール、加圧装置及び基板貼り合せ装置 - Google Patents
加圧モジュール、加圧装置及び基板貼り合せ装置 Download PDFInfo
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- WO2011036900A1 WO2011036900A1 PCT/JP2010/005823 JP2010005823W WO2011036900A1 WO 2011036900 A1 WO2011036900 A1 WO 2011036900A1 JP 2010005823 W JP2010005823 W JP 2010005823W WO 2011036900 A1 WO2011036900 A1 WO 2011036900A1
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- pressure
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- pressurizing
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
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- Y10T428/24595—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness and varying density
Definitions
- the present invention relates to a pressure module, a pressure device, and a substrate bonding device.
- Patent Document 1 describes a wafer bonding apparatus that manufactures a three-dimensional stacked semiconductor device by bonding two wafers on which circuits are formed by heating and pressing. When bonding a wafer with a larger area than a chip, it is required to bond the entire wafer under pressure under uniform conditions. However, the wafer bonding device uses a pressure profile control module to control the pressure. I do. [Prior art documents] [Patent Literature] [Patent Document 1] Japanese Unexamined Patent Application Publication No. 2009-49066
- a stage having a mounting surface on which a member to be pressed is mounted, and a variable pressure that varies the pressure distribution in the surface of the mounting surface.
- a pressurizing module including a unit and a plurality of pressure detecting units for detecting the pressure of the pressure variable unit.
- a pressurizing device in which the pressurizing module is arranged to face.
- the pressurizing module and another stage arranged opposite to the stage of the pressurizing module are provided, and a plurality of substrates placed between the stage and the other stage are provided. Paste is provided.
- FIG. 1 is a top view of the lower heat module which shows the positional relationship of the 1st support
- FIG. It is sectional drawing which shows the structure of a raising / lowering module roughly. It is sectional drawing which shows a mode that the main piston was raised by the raise of a lower piston.
- 2 is a block diagram of a pressure control system 700.
- FIG. 1 is a plan view schematically showing the entire structure of the bonding apparatus 100 including the pressurizing apparatus 240.
- the bonding apparatus 100 includes an air environment unit 102 and a vacuum environment unit 202 formed inside a common housing 101.
- the atmospheric environment unit 102 has a plurality of substrate cassettes 111, 112, 113 and a control panel 120 facing the outside of the housing 101.
- Each element of each device included in the bonding apparatus 100 is obtained by performing integrated control and cooperative control by a control panel 120 that controls the entire bonding apparatus 100 or a control operation unit provided for each element. Operate.
- the control panel 120 has an operation unit that is operated by the user from the outside when the bonding apparatus 100 is turned on and various settings are made.
- the control panel 120 may include a connection unit that connects to other deployed devices.
- the substrate cassettes 111, 112, and 113 accommodate the substrate 180 bonded in the bonding apparatus 100 or the substrate 180 bonded in the bonding apparatus 100.
- the substrate cassettes 111, 112, and 113 are detachably attached to the housing 101. As a result, a plurality of substrates 180 can be loaded into the bonding apparatus 100 at once. Further, the substrates 180 bonded in the bonding apparatus 100 can be collected together.
- the atmospheric environment unit 102 includes a pre-aligner 130, a temporary bonding apparatus 140, a substrate holder rack 150 and a substrate removal unit 160, and a pair of robot arms 171 and 172, which are disposed inside the housing 101.
- the inside of the housing 101 is temperature-managed so that substantially the same temperature as the room temperature of the environment where the bonding apparatus 100 is installed is maintained. Thereby, since the precision of the temporary joining apparatus 140 is stabilized, positioning can be performed accurately.
- the temporary bonding apparatus 140 is an apparatus that accurately aligns two opposing substrates 180 and superimposes them on each other, so that the adjustment range is very narrow. Therefore, prior to loading into the temporary bonding apparatus 140, the prealigner 130 approximately grasps the positions of the individual substrates 180 so that the positions of the substrates 180 are within the adjustment range of the temporary bonding apparatus 140.
- the temporary joining device 140 is loaded into the robot arm 172 while adjusting the direction based on the position roughly grasped by the pre-aligner 130. Thereby, the positioning in the temporary joining apparatus 140 can be ensured.
- the substrate holder rack 150 accommodates a plurality of substrate holders 190 and stands by.
- the substrate holder 190 holds the substrate 180 by electrostatic adsorption, and a specific configuration will be described later.
- the temporary bonding apparatus 140 includes a fixed stage 141, a moving stage 142, and an interferometer 144. Further, a heat insulating wall 145 and a shutter 146 are provided so as to surround the temporary joining device 140. The space surrounded by the heat insulating wall 145 and the shutter 146 is communicated with an air conditioner or the like, and the temperature is controlled, so that the alignment accuracy in the temporary bonding apparatus 140 is maintained.
- the moving stage 142 carries the substrate 180 or the substrate holder 190 holding the substrate 180.
- the fixed stage 141 holds the substrate holder 190 and the substrate 180 in a fixed state.
- the substrate removing unit 160 takes out the substrate 180 sandwiched and bonded by the substrate holder 190 from the substrate holder 190 carried out from the pressurizer 240 described later.
- the substrate 180 taken out from the substrate holder 190 is returned to and stored in the substrate cassette 113 by the robot arms 172 and 171 and the moving stage 142.
- the substrate holder 190 from which the substrate 180 has been taken out is returned to the substrate holder rack 150 and waits.
- the substrate 180 loaded in the bonding apparatus 100 is a single silicon wafer, a compound semiconductor wafer or the like in which a plurality of circuit patterns are already formed periodically.
- the loaded substrate 180 may be a laminated substrate that is already formed by laminating a plurality of wafers.
- the robot arm 171 disposed on the side closer to the substrate cassettes 111, 112, 113 moves the substrate 180 between the substrate cassettes 111, 112, 113, the pre-aligner 130, and the temporary bonding apparatus 140. Transport.
- the robot arm 171 also has a function of turning over one of the substrates 180 to be joined. Accordingly, the surfaces of the substrate 180 on which circuits, elements, terminals, and the like are formed can be opposed to each other.
- the robot arm 172 disposed on the side far from the substrate cassettes 111, 112, 113 is a substrate 180 between the temporary bonding apparatus 140, the substrate holder rack 150, the substrate removing unit 160, the substrate holder rack 150, and the air lock chamber 220. And the substrate holder 190 is conveyed.
- the robot arm 172 is also responsible for loading and unloading the substrate holder 190 with respect to the substrate holder rack 150.
- the vacuum environment unit 202 includes a heat insulating wall 210, an air lock chamber 220, a robot arm 230, and a plurality of pressure devices 240.
- the heat insulating wall 210 surrounds the vacuum environment unit 202 to maintain a high internal temperature of the vacuum environment unit 202 and to block heat radiation to the outside of the vacuum environment unit 202. Thereby, the influence which the heat of the vacuum environment part 202 has on the atmospheric environment part 102 can be suppressed.
- the robot arm 230 conveys the substrate 180 and the substrate holder 190 between any of the pressurizing devices 240 and the air lock chamber 220.
- the air lock chamber 220 includes shutters 222 and 224 that open and close alternately on the atmosphere environment unit 102 side and the vacuum environment unit 202 side.
- the shutter 222 on the atmospheric environment unit 102 side is opened, and the robot arm 172 moves the substrate 180 and the substrate holder 190 to the air lock chamber. Carry into 220. Next, the shutter 222 on the atmosphere environment unit 102 side is closed, and the shutter 224 on the vacuum environment unit 202 side is opened.
- the air lock chamber 220 is provided with a heater 221, and the substrate 180 and the substrate holder 190 to be loaded are preheated by the heater 221 before being pressurized and heated by the pressure device 240. That is, by using the time for exchanging the atmosphere in the air lock chamber 220, the substrate 180 and the substrate holder 190 are heated to some extent before being carried into the pressurizing device 240, thereby improving the throughput of the pressurizing device 240. Note that heating in the air lock chamber 220 is preferably performed before the substrate 180 and the substrate holder 190 are carried into the air lock chamber 220. Thereby, the time for the substrate 180 and the substrate holder 190 to stay in the air lock chamber 220 can be shortened.
- the robot arm 230 unloads the substrate 180 and the substrate holder 190 from the air lock chamber 220 and loads them into one of the pressurizing devices 240.
- the pressurizing device 240 presses hot the substrate 180 carried into the pressurizing device 240 while being sandwiched between the substrate holders 190. Thereby, the substrate 180 is permanently bonded. Specific processing and configuration will be described later.
- the pressurizing device 240 includes a main body that pressurizes the substrate 180 and the substrate holder 190, and a pressurization chamber in which the main body is disposed.
- the robot arm 230 is installed in the robot arm chamber. That is, the plurality of pressurizing chambers, robot arm chambers, and air lock chambers 220 constituting the vacuum environment unit 202 are individually partitioned and the atmosphere can be adjusted separately.
- the vacuum environment unit 202 includes a plurality of pressurization chambers and an air lock chamber 220 arranged in the circumferential direction with the robot arm chamber as the center.
- the above series of operations are executed in reverse order. Through a series of these operations, the substrate 180 and the substrate holder 190 can be carried into or out of the vacuum environment unit 202 without leaking the internal atmosphere of the vacuum environment unit 202 to the atmosphere environment unit 102 side.
- one of the plurality of pressure devices 240 can be replaced with a cooling device.
- the cooling chamber in which the cooling device is installed is also arranged around the robot arm chamber.
- the cooling device is loaded with the substrate 180 and the substrate holder 190 heated by the pressurizing device 240, and plays a role of cooling them to a certain temperature.
- the cooling device preferably cools the cooling chamber in advance before the heated substrate 180 and substrate holder 190 are carried in.
- the robot arm 171 carries the substrates 180 one by one into the pre-aligner 130 and pre-aligns them. At this time, first, pre-alignment is performed from the substrate 180 whose bonding surface faces downward. In parallel with the pre-alignment, the robot arm 172 takes out the substrate holder 190 stored with the surface for holding the substrate 180 facing downward from the substrate holder rack 150 and transports it to the fixed stage 141 with the mounting surface facing downward. .
- the fixing stage 141 fixes the substrate holder 190 that has been transported by vacuum suction. Note that the fixed stage 141 is positioned above the moving stage 142.
- the robot arm 171 takes out the pre-aligned substrate 180 from the pre-aligner, and temporarily places it on a plurality of push-up pins protruding from the moving stage 142 with a reversing mechanism in the middle of conveyance, with the joint surface facing downward.
- the substrate 180 temporarily placed on the push-up pin is lifted to the fixed stage 141 side by the push-up pin and pressed against the mounting surface of the substrate holder 190 that is already fixed to the fixed stage 141.
- the substrate holder 190 is supplied with electric power from the fixed stage 141 and electrostatically adsorbs and fixes the substrate 180.
- the robot arm 172 takes out the substrate holder 190 whose surface holding the substrate 180 is upward from the substrate holder rack 150 and conveys it to the moving stage 142 whose mounting surface is upward.
- the moving stage 142 fixes the transported substrate holder 190 by vacuum suction. Note that when the substrate holder 190 whose surface holding the substrate 180 is upward is transported to the moving stage 142, the push-up pin is retracted from the stage surface of the moving stage 142.
- the robot arm 171 takes out the pre-aligned substrate 180 from the pre-aligner and places it on the mounting surface of the substrate holder 190 that is already fixed to the moving stage 142.
- the substrate holder 190 is supplied with electric power from the moving stage 142 and electrostatically attracts and fixes the substrate 180. In this way, the substrate holder 190 and the substrate 180 are fixed to the respective stages so that their joint surfaces face each other.
- the moving stage 142 is moved precisely while monitoring the position by the interferometer 144, and the bonding surface of the substrate 180 placed is held on the fixed stage 141. Alignment is performed with respect to the bonded surface of the substrate 180 formed. When the alignment is completed, the moving stage 142 is moved to the fixed stage 141 side, and the joining surfaces are brought into contact with each other to temporarily join them. Temporary joining is realized by causing the suction mechanisms provided on each of the two substrate holders 190 facing to be integrated.
- the two substrates 180 and the two substrate holders 190 which are temporarily joined and integrated are transferred to the air lock chamber 220 by the robot arm 172.
- the substrate 180 and the substrate holder 190 transferred to the air lock chamber 220 are loaded into the pressurizing device 240 by the robot arm 230.
- the two substrates 180 are joined to each other and become permanently integrated. Thereafter, the substrate 180 and the substrate holder 190 are unloaded from the vacuum environment unit 202 and carried into the substrate removing unit 160, where the substrate 180 and the substrate holder 190 are separated from each other.
- the bonded substrate 180 is transferred to and stored in the substrate cassette 113.
- the moving stage 142 is also involved in the transfer from the robot arm 172 to the robot arm 171.
- the substrate holder 190 is returned to the substrate holder rack 150 by the robot arm 172.
- FIG. 2 is a perspective view showing the substrate holder 190 as viewed from above.
- the substrate 180 is held on the upper surface of the substrate holder 190.
- FIG. 3 is a perspective view showing the substrate holder 190 as viewed from below.
- the substrate holder 190 has a holder main body 191, an adsorber 192, and a voltage application terminal 194, and has a disk shape whose diameter is slightly larger than that of the substrate 180 as a whole.
- the holder body 191 is integrally formed of a highly rigid material such as ceramic or metal.
- the adsorbers 192 are formed of a ferromagnetic material, and a plurality of adsorbers 192 are arranged in an outer peripheral region that is outside the held substrate 180 on the holding surface that holds the substrate 180. In the case of the figure, a total of six adsorbers 192 are arranged every 120 degrees with two as one set.
- the voltage application terminal 194 is embedded in the back surface of the surface holding the substrate 180.
- the holder main body 191 has high flatness on the holding surface.
- the holder main body 191 has a plurality of positioning holes 193 formed through the holder main body 191 on the front and back sides outside the region where the held substrate 180 is electrostatically attracted.
- the holder main body 191 has a plurality of insertion holes 195 formed through the holder main body 191 on the front and back sides inside the region where the held substrate 180 is electrostatically attracted.
- a push-up pin is inserted into the insertion hole 195 so that the substrate 180 can be detached from the substrate holder 190.
- the positioning hole 193 is used for positioning the substrate holder 190 by fitting with a positioning pin provided in the fixed stage 141 or the like.
- the adsorber 192 is disposed in a depressed region formed in the holder main body 191 so that the upper surface is located in substantially the same plane as the holding surface.
- the voltage application terminal 194 is embedded in the back surface of the holder body 191. By supplying a voltage via the voltage application terminal 194, a potential difference is generated between the substrate holder 190 and the substrate 180, and the substrate 180 is electrostatically attracted to the substrate holder 190.
- the fixed stage 141 and the like are provided with voltage supply terminals, respectively, so that electrostatic adsorption between the substrate 180 and the substrate holder 190 can be maintained.
- the substrate holder 190 placed on the moving stage 142 and the substrate holder 190 placed on the fixed stage 141 have slightly different configurations. Specifically, instead of the adsorber 192, a plurality of magnets are arranged to face the adsorber 192. By combining the attractor 192 and the magnet, the two substrate holders 190 are integrated by sandwiching the two substrates 180.
- the two integrated substrates 180 and the two substrate holders 190 may be referred to as a substrate holder pair.
- FIG. 4 is a front view schematically showing the entire structure of the pressurizing device 240.
- the pressurizing device 240 is installed in the pressurizing chamber adjusted in a vacuum environment as described above.
- the pressurizing device 240 includes an upper top plate 31, an upper heat module 41, and an upper pressure control module 51 installed on the ceiling side, a lower top plate 32, a lower heat module 42, and a lower pressure control module installed on the floor side. 52 and the lifting module 60.
- the upper top plate 31, the upper heat module 41, and the upper pressure control module 51 form an upper pressure module
- the lower top plate 32, the lower heat module 42, and the lower pressure control module 52 form a lower pressure module.
- the upper heat plate 41 and the lower heat module 42 have a function of heating the upper top plate 31 and the lower top plate 32
- the upper pressure module and the lower pressure module are respectively heating modules. Can also play a role as
- a pair of substrate holders in which the two substrate holders 190 are integrated by sandwiching the two substrates 180 are carried into and placed on the lower top plate 32 by the robot arm 230.
- the substrate holder pair is brought into contact with the upper top plate 31 as the elevating module 60 is raised, and is pressed and heated between the upper pressurizing module and the lower pressurizing module.
- the upper pressure module and the lower pressure module installed opposite to each other are modules having the same structure. Therefore, the structure of the lower pressure module will be described below as a representative.
- FIG. 5 is a cross-sectional view schematically showing the structure of the lower pressure module.
- the main structure is simplified and a part thereof is omitted.
- the lower top plate 32 serving as a stage portion on which the substrate holder body is placed is a circular plate made of silicon carbide, and is screwed to the lower heat module 42 at the periphery.
- the lower heat module 42 includes a plurality of heater plates 401, 402, and 403 that are in contact with each other on the surface opposite to the surface on which the substrate holder body of the lower top plate 32 is placed, in a cylindrical shape.
- the heater plates 401, 402, and 403 are heating units, which are made of, for example, copper, and an electric heater 404 is embedded in each of them.
- the electric heater 404 is supplied with electric power by a conductive wire 405, and a bead 406 made of ceramic, for example, is used as its coating so as to withstand high heat.
- a plurality of beads 406 are connected to penetrate the conductive wire 405 and are led from the heating space to the non-heating space.
- the heater plates 401, 402, and 403 are heated by the electric heater 404 during the heating control and transmit the heat to the lower top plate 32. Further, at the time of cooling control after completion of heating, the cooling pipe 407 functioning as a cooler is used for cooling.
- the heater plates 401, 402, and 403 are supported and fixed by a frame 410 that is formed radially from a central axis that passes through the center of the lower top plate 32.
- the frame 410 is connected to and supported by one end in the axial direction by a plurality of support columns 411.
- the other end of each column portion 411 is connected to the load cell 412.
- Each load cell 412 is installed on the surface opposite to the surface to which the support column 411 is connected so as to be in contact with the outside of the hollow pressurizing unit 501 that is a main element of the lower pressure control module 52.
- the load cell 412 is a pressure detection unit, and detects the pressure at which the hollow pressure unit 501 presses the column part 411 through the hollow pressure unit 501 and the column unit 411.
- the internal space of the lower heat module 42 is divided into a heating space and a non-heating space by a heat shield plate 420 installed in parallel to the mounting surface of the substrate holder pair of the lower top plate 32.
- the heat shield plate 420 is a partition that performs a function of not transmitting the heat of the heating space heated by the heater plates 401, 402, and 403 to the non-heating space where the hollow pressurizing unit 501, load cell 412 and the like that dislike high temperatures are installed as much as possible. It is a board.
- the heat shield plate 420 is provided with a through-hole through which the support column 411 passes. That is, the support column 411 exists across the heating space and the non-heating space.
- the heat shield plate 420 is also provided with a through-hole through which the conducting wire 405 penetrates, and a cap 421 is provided around the through-hole to guide the conducting wire 405 in a direction different from the direction in which the conducting wire 405 is pulled out from the through-hole. ing.
- a plurality of heat reflecting plates 422 are installed in parallel with the heat shield plate 420 and spaced from each other. Similarly to the heat shield plate 420, the heat reflecting plate 422 is also provided with a through hole that allows the support column 411 to pass therethrough.
- These heat reflecting plates 422 are formed of a metal plate such as aluminum, for example.
- a multilayer film that reflects the wavelength of radiation near the target heating temperature of the lower top plate 32 is formed on at least the surface of the one heating space.
- the target heating temperature of the lower top plate 32 is, for example, 450 ° C. to 500 ° C. when the substrate 180 that is a wafer is bonded.
- the heat reflecting plate 422 may be configured to be replaced according to the target heating temperature. Thereby, the transfer of heat from the heater plates 401, 402, 403 to the hollow pressurizing unit 501 can be relaxed. In addition to being provided in parallel with the heat shield plate 420, it may be provided in parallel with the axial direction of the support column 411. As a result, heat leakage from the lower heat module 42 to the outside can be reduced.
- the hollow pressurizing unit 501 is a bag-shaped pressure control unit formed of a rubber sheet or the like, and the inside thereof is filled with a fluid. Air, water, or oil is used as the fluid. For example, hydrofluoroether having excellent environmental characteristics is used. Then, the amount of fluid filled therein is adjusted by controlling the valve 502 installed in the hollow pressurizing unit 501 and the supply pipe 503. Specifically, the other end of the supply pipe 503 is connected to a pump (not shown), and the amount of fluid inside the hollow pressurizing unit 501 is increased or decreased by controlling the pump together with the valve 502. The hollow pressurizing unit 501 expands or contracts depending on the amount of fluid inside.
- the surfaces in contact with the plurality of load cells 412 are made flat or the peripheral portion Can be made convex or the central part can be controlled to be convex.
- the hollow pressurizing part 501 not only forms a bag with an elastic material such as a rubber sheet, but also uses, for example, a surface contacting the load cells 412 as a deformed plate, and a lifting module 60 side and an outer peripheral side as a highly rigid plate. It may be in the form of a box to be formed. Even in such a form, if the inside is kept in an airtight bag shape, the internal pressure can be adjusted by controlling the fluid that enters and exits from the outside, and the pressure is controlled with respect to the surface in contact with the load cell 412. Can do.
- FIG. 6 is a top view of the lower heat module 42 showing the shape and arrangement of the heater plates 401, 402, 403.
- the plane area covered by the heater plates 401, 402, 403 is wider than the area corresponding to the mounting surface of the substrate holder 190 mounted on the lower top plate 32. Thereby, the back surface of the substrate holder 190 can be heated uniformly.
- each of the heater plates 401, 402, and 403 is arranged to be spaced apart from each other while being parallel to each other. Thereby, even if the heater plates 401, 402, and 403 are heated and expanded by the electric heaters 404 embedded therein, it is possible to avoid contact with each other.
- the distance between each other is set in advance according to the target heating temperature or the like.
- the heater plates 401, 402, 403 are made of copper
- the diameter of the lower top plate 32 is about 330 mm
- the target heating temperature is 450 ° C. Is set to about 1 mm.
- the heating surfaces of the respective heater plates 401, 402, 403 have the same area. Accordingly, the diameter, the central angle, etc. are designed so that the circular and sector shapes have the same area. Further, in the example of the figure, the radial direction is set to three steps and the number is determined, but the number of radial steps and the number per step can be arbitrarily set. Furthermore, if the thickness of each heater plate 401, 402, 403 is also the same, each heat capacity is also the same, which is more preferable.
- the cooling pipe 407 that functions as a cooler is piped so as to cool one or more of the heater plates 401, 402, and 403.
- a pipe as a cooling pipe 407 is stretched so as to be in contact with either of the heater plates 402 and 403, and an external pump is controlled so that the refrigerant circulates in the pipe.
- the material of the pipe is preferably the same material as the heater plates 401, 402, and 403. Even if they are not the same material, if the linear expansion coefficient is the same, thermal sliding due to a temperature change does not occur on the contact surface, so that it can be applied as a material for a pipe.
- FIG. 7 is a top view of the lower heat module 42 showing the positional relationship among the heater plates 401, 402, 403, the frame 410, and the support column 411.
- FIG. The frame 410 has a shape in which a plurality of arm portions are radially extended from an annular portion provided at a central portion.
- the heater plate 401 is fixed with screws 408 at the annular portion, and the heater plates 402 and 403 are similarly fixed with screws 408 at the arm portions.
- the screws 408 are preferably arranged at positions that are rotationally symmetric or bilaterally symmetric on the center line in each heater plate 401, 402, 403.
- the pressure from the hollow pressurizing unit 501 is transmitted to the heater plates 401, 402, and 403 through the plurality of support columns 411 and the frame 410.
- the heater plates 401, 402, and 403 press and heat the lower top plate 32.
- the hollow pressurizing part 501 is regarded as an actuator that generates a pressing force in the axial direction of the column part 411, this pressing force is, for example, when the column part 411 that presses one heater plate 402 is focused. It is transmitted in the order of 402 ⁇ lower top plate 32.
- the pressing surface that the support column 411 presses against the heater plate 402 is smaller than the pressing surface that the heater plate 402 presses against the lower top plate 32.
- the pressing force is transmitted while spreading in the transmitting direction.
- the localized pressure is transmitted in a gradually distributed manner.
- a uniform pressing force can be generated on the lower top plate 32, or the entire substrate 180 can be pressed uniformly.
- an intentional gentle pressure distribution can be generated on the lower top plate 32.
- the frame 410 is interposed between the heater plates 401, 402, 403 and the column part 411, but if attention is paid to the vicinity of each column part 411, the localized pressure is gradually dispersed. There is no change in being conveyed.
- the present invention can also be applied to the case of using actuators that individually press each. That is, even if the pressing force generated by the actuator is localized, the lower top plate 32 can be pressed over a wide surface by gradually dispersing the pressing force.
- FIG. 8 is a top view and a front view of the load cell 412.
- Strain gauges 413 which are piezoelectric elements, are attached to two places on the upper surface of the load cell 412, and similarly, strain gauges 413 are attached to two places on the lower surface.
- the output lines of the strain gauges attached to the four places are gathered together at the side terminal portions 414 and connected to the outside via the lead wires 415.
- a screw hole 416 for connecting the support column 411 is provided near the center of the upper surface. Further, two screw holes 417 are provided so as to be symmetric with respect to the screw hole 416.
- the load cell 412 is fixed to the hollow pressure part 501 through the screw hole 417.
- the pressure applied to each column part 411 can be detected. And according to the detected pressure, the pressure of the hollow pressurization part 501 can be adjusted, and raising / lowering of the raising / lowering module 60 can be adjusted. Further, when an abnormal pressure exceeding an assumed range is detected, it is possible to perform control to stop pressurization.
- a piezoelectric element since a piezoelectric element generates a potential difference according to its magnitude when pressure is applied, the applied pressure can be detected. On the contrary, when electric power is applied, physical deformation can be caused.
- power is supplied to the strain gauge 413 of the load cell 412 in that region or a region other than that region and applied to the support column 411. Can be controlled to increase the pressure produced.
- the load cell 412 By causing the load cell 412 to act as an auxiliary actuator, more precise pressure control can be realized. In particular, it is suitable when the substrate holder body placed on the lower top plate 32 is pressed evenly.
- the hollow pressurizing unit 501 may be omitted.
- positioning of the load cell 412 is not restricted to said position, For example, it may provide in multiple on the raising / lowering module 60, and you may comprise so that a pressure may be adjusted with respect to the pressure applied to a lower pressure control module.
- FIG. 9 is a cross-sectional view for explaining the wiring of the electric heater 404.
- the heater plate 401 will be described as a representative example, but the configuration of the heater plates 402 and 403 is the same.
- a conductive wire 405 is drawn from an electric heater 404 embedded in the heater plate 401.
- the conductive wire is usually protected by a vinyl film.
- the heater plate 401 is heated to 450 ° C. to 500 ° C., so the vinyl film cannot be used.
- beads 406 formed of an insulating material that has a melting point higher than the temperature of the heating space and does not generate gas even in a vacuum atmosphere are used as a protective material for the conducting wire 405.
- ceramic is suitable as the material.
- a plurality of beads 406 that protect the conducting wire 405 are configured so as to penetrate the conducting wire 405 from the heating space to the non-heating space so that the conducting wire 405 can be bent.
- the heating space and the non-heating space are divided by the heat shield plate 420, and the heat shield plate 420 is provided with a through hole 423 through which the conducting wire 405 is inserted.
- a flange 424 is provided on the peripheral edge of the through hole 423.
- the flange 424 is an upright portion formed by being bent in the insertion direction of the conducting wire 405.
- a through portion is formed by the through hole 423 and the flange 424.
- each bead 406 has a movable amount so that it can move along the conducting wire 405.
- the movable amount is larger than the height h of the penetrating portion, the conductive wire 405 may directly contact the penetrating portion. Therefore, this movable amount is set to be smaller than the height h of the penetrating portion.
- FIG. 10 is a cross-sectional view schematically showing the structure of the lifting module 60.
- the main structure is simplified and a part thereof is omitted.
- the elevating module 60 has a two-stage structure on the top and bottom.
- the main EV unit 610 is fastened to the lower pressure control module 52 at the stage 611.
- the lower pressure control module 52 can be moved up and down by moving the stage 611 up and down with respect to the floor surface, so that pressure can be applied to the substrate holder body.
- the main EV section 610 is composed of one cylinder-piston mechanism having a large diameter
- the sub EV section 620 is formed by three cylinder-piston mechanisms having a small diameter at intervals of 120 ° in the circumferential direction when viewed from above. Arranged and configured.
- the main EV unit 610 and the sub EV unit 620 are not stacked one above the other independently, but are devised to raise and lower the stage 611 while acting on each other. Each structure will be described below.
- the main EV unit 610 includes a main piston 612 having a stage 611 as an upper surface, a main cylinder 613 fitted on the main piston, and a bellows 614 connected to the main cylinder 613 and following the elevation of the main piston 612.
- the main room 615 which is a space formed between the main cylinder 613 and the main piston 612, is kept airtight even when the main cylinder 613 moves up and down.
- a main valve 616 is connected to the main room 615, and fluid flows in and out from the outside.
- the main room 615 is filled with fluid, and the amount of fluid in the main room 615 can be changed by controlling the main valve 616 for the inflow and outflow of this fluid.
- the main piston 612 can be moved up and down by changing the amount of fluid in the main room 615.
- the sub-EV unit 620 includes three sub-EV units 620 as described above in this embodiment, but includes a sub-piston 621 and a sub-cylinder 624 that fits around the sub-piston 621.
- the sub-piston 621 is inserted from the outside of the main cylinder 613 into the piston guide 617 provided in the main cylinder 613 and reaches the main room 615.
- a fixing portion 622 for fixing to the main piston 612 is provided at the tip of the sub-piston 621 located inside the main room 615.
- the sub piston 621 is fastened to the main piston 612 by the fixing portion 622.
- the sub-piston 621 includes a piston disk 623 that is fitted on the sub-cylinder 624 at the end opposite to the end where the fixing portion 622 is provided.
- the space in the sub cylinder 624 is divided by the piston disk 623 into an upper sub room 625 located on the main cylinder 613 side and a lower sub room 626 located on the floor surface side.
- Both the upper subroom 625 and the lower subroom 626 are kept airtight.
- An upper sub-valve 627 is connected to the upper sub-room 625, and fluid flows in and out from the outside.
- a lower sub-valve 628 is connected to the lower sub-room 626 so that fluid flows in and out from the outside.
- the upper subroom 625 and the lower subroom 626 are filled with fluid. Also, since the total volume of the upper subroom 625 and the lower subroom 626 is always constant, the volume ratio of the upper subroom 625 and the lower subroom 626 is changed by cooperatively controlling the upper subvalve 627 and the lower subvalve 628.
- the volume of the upper subroom 625 is increased, the volume of the lower subroom 626 is decreased and the sub piston 621 is lowered. Since the sub piston 621 is connected to the main piston 612, the main piston 612 is also lowered. At this time, the main valve 616 is also cooperatively controlled, and fluid is discharged to the outside by the volume reduction of the main room 615 accompanying the lowering of the main piston 612.
- FIG. 11 is a cross-sectional view showing a state in which the main piston 612 is raised by increasing the volume of the lower subroom 626.
- the sub piston 621 follows also when the main piston 612 is moved up and down by adjusting the amount of fluid in the main room 615 using the main valve 616. Therefore, at this time as well, the upper sub-valve 627 and the lower sub-valve 628 are cooperatively controlled, and the volume change of the upper sub-room 625 and the lower sub-room 626 is allowed as the sub-piston 621 follows.
- air, water, and oil are used as the fluid filled in the main room 615, the upper subroom 625, and the lower subroom 626.
- hydrofluoroether having excellent environmental characteristics is used.
- the control can be varied depending on how the stage 611 is to be moved up and down. Specifically, when it is desired to move at a speed equal to or higher than a predetermined speed, the fluid of the sub EV unit 620 that can obtain a large displacement by inflow / outflow of a small volume is controlled, and when a pressure higher than a predetermined pressure is to be applied, The fluid of the main EV unit 610 that remains in a slight displacement even when the large volume flows in and out is controlled. Further, the fluid in the main EV unit 610 may be controlled when it is desired to move at a speed less than a predetermined speed.
- the upper pressurizing modules having the same structure as the pressurizing module described in detail are arranged facing each other, and placed on the lower pressurizing module by the lifting module 60.
- the substrate holder body thus made is brought into contact with the upper pressure module and heated under pressure.
- the embodiment is not limited to this. For example, even if the structure is such that a flat surface plate is installed instead of installing the upper pressure module on the ceiling side and the structure is simply pressed from below to above, a certain degree of pressure uniformity is expected. can do.
- FIG. 12 is a front view schematically showing another pressurizing device 840.
- the pressurizing device 840 includes an upper top plate 31, an upper heat module 41, and an upper pressure control module 51 installed on the ceiling side, a lower top plate 32, a lower heat module 42, and a lower pressure control module installed on the floor side. 52 and the lifting module 60.
- the pressurizing device 840 is installed in a vacuum chamber that is maintained at a certain degree of vacuum and a certain degree of cleanness for the purpose of preventing oxidation and contamination of the substrate 22 in the substrate bonding process.
- the upper top plate 31, the upper heat module 41, and the upper pressure control module 51 form an upper pressure module.
- the lower top plate 32, the lower heat module 42, and the lower pressure control module 52 form a lower pressurizing module.
- the upper heat plate 41 and the lower heat module 42 have a function of heating the upper top plate 31 and the lower top plate 32, the upper pressure module and the lower pressure module are respectively heating modules. Can also play a role as
- the two substrates 22 to be joined are aligned and overlapped by an aligner provided separately from the pressure device 840 so that the electrodes to be joined are in contact with each other. Further, the two substrates 22 are held by the two substrate holders 24 in a temporarily bonded state so that positional displacement does not occur.
- the substrate 22 and the substrate holder 24 in this state are referred to as “substrate holder pair”.
- the pair of substrate holders is carried into the pressurizing device 840 by the robot arm and placed on the lower top plate 32 (FIG. 12).
- the substrate holder pair is brought into contact with the upper top plate 31 as the elevating module 60 is raised, and is sandwiched between the upper pressure module and the lower pressure module, and the substrates are bonded together in a heated and pressurized state.
- the upper pressurizing module and the lower pressurizing module installed opposite to each other are modules having the same structure. Therefore, the structure of the lower pressure module will be described below as a representative.
- FIG. 13 is a cross-sectional view schematically showing the structure of the lower pressure module.
- the lower top plate 32 serving as a stage portion on which the substrate holder pair is placed is a circular plate made of silicon carbide, and is screwed to the lower heat module 42 at the peripheral portion.
- the lower heat module 42 includes a plurality of heater plates 401, 402, and 403 that are in contact with the surface of the lower top plate 32 opposite to the surface on which the pair of substrate holders is placed inside the cylindrical body.
- the heater plates 401, 402, and 403 heat the lower top plate 32.
- the heater plates 401, 402, and 403 are made of a material having good heat conductivity, such as copper.
- the heater plates 401, 402, and 403 each have an electric heater 404 embedded therein.
- the electric heater 404 is supplied with electric power by a conducting wire 405.
- the conductive wire 405 is covered with a bead 406 formed of a material that can withstand high heat, for example, ceramic.
- the heater plates 401, 402, and 403 are heated by the electric heater 404 during the heating control and transmit the heat to the lower top plate 32. Further, at the time of cooling control after completion of heating, the cooling pipe 407 functioning as a cooler is used for cooling.
- the heater plates 401, 402, and 403 are supported and fixed by a frame 410 that is formed radially from a central axis that passes through the center of the lower top plate 32.
- the frame 410 is connected to and supported by one ends of a plurality of first support columns 418 and second support columns 431. And the other end of each 1st support
- pillar part 431 is connected with the 1st pressure detection part 419 or the 2nd pressure detection part 432, respectively.
- Each first pressure detection unit 419 is installed so as to be in contact with the outside of the hollow pressurization unit 501 of the lower pressure control module 52 on the surface opposite to the surface to which the first support column 418 is connected.
- the first pressure detection unit 419 detects the pressure with which the hollow pressure unit 501 presses the first support column 418.
- the first pressure detection unit 419 may be a load cell.
- Each of the second pressure detectors 432 is installed in contact with the lower plate which is the main body of the lower pressure control module 52 on the surface opposite to the surface to which the second support column 431 is connected.
- the second pressure detection unit 432 detects the pressure with which the main body of the lower pressure control module 52 presses the second support column 431.
- the second pressure detection unit 432 may be a load cell.
- the internal space of the lower heat module 42 is divided into a heating space and a non-heating space by a heat shield plate 420 installed in parallel to the mounting surface of the substrate holder pair of the lower top plate 32.
- the heat shield plate 420 does not transmit the heat of the heating space heated by the heater plates 401, 402, 403 to the non-heating space where the hollow pressurizing unit 501, the first pressure detecting unit 419, etc., which are vulnerable to high temperatures, are installed as much as possible. It is a partition plate that bears the function.
- the heat shield plate 420 is provided with a through hole through which the first support column 418 and the second support column 431 pass. That is, the 1st support
- the heat shield plate 420 is also provided with a through hole through which the conductive wire 405 passes.
- the hollow pressurization part 501 is a hollow pressure control part, and the inside is filled with a fluid. Air, water, or oil is used as the fluid.
- the hollow pressurizing unit 501 adjusts the amount of fluid filled therein by controlling a valve 502 provided between the hollow pressurizing unit 501 and the supply pipe 503.
- the hollow pressurizing unit 501 can control the pressure of the internal fluid by adjusting the amount of fluid filled therein.
- the pressure of the internal fluid in the hollow pressurizing unit 501 is detected and monitored by the pressure sensor 436. For example, when an abnormal pressure exceeding an assumed range is detected, control for stopping pressurization can be performed.
- the hollow pressure part 501 may be a bag formed from a rubber sheet or the like.
- the hollow pressurizing unit 501 can expand or contract depending on the amount of fluid inside, and can control the pressure with respect to the surface in contact with the plurality of first pressure detecting units 419.
- the hollow pressurization part 501 may be a box-like form in which the surface side in contact with the plurality of first pressure detection parts 419 is formed as a deformation plate, and the elevation module 60 side and the outer peripheral side are formed as high-rigidity plates.
- the internal pressure can be adjusted by controlling the fluid that enters and exits from the outside, and the pressure against the surface in contact with the first pressure detection unit 419 is increased. Can be controlled.
- the amount of fluid flowing in and out through the valve 502 is adjusted in relation to the pressure received by the lower pressure control module 52 from the lifting module 60, the surface in contact with the plurality of first pressure detectors 419 is flattened.
- the peripheral part can be made convex, or the central part can be controlled to be convex.
- the hollow pressure part 501 includes a lower plate 510, an upper plate 511, and a hollow chamber 512 formed therebetween. As described above, the hollow chamber 512 is filled with the fluid supplied from the supply pipe 503.
- the upper plate 511 is provided with a groove 514 on a concentric circle centering on the center of the upper plate 511 at the outer peripheral edge. The groove 514 can relieve stress concentration at the peripheral edge of the upper plate 511 when the upper plate 511 is deformed.
- FIG. 14 is a diagram conceptually showing the deformation of the upper plate 511 when a fluid is introduced into the hollow chamber 512 to increase the pressure of the fluid.
- the upper plate 511 swells and deforms toward the outside of the hollow chamber 512.
- the deformation at the center of the upper plate 511 is the largest, and the deformation gradually decreases toward the peripheral edge.
- FIG. 15 is a drawing conceptually showing the deformation of the upper plate 511 when the fluid pressure in the hollow chamber 512 is lowered.
- the upper plate 511 is recessed and deformed toward the inside of the hollow chamber 512.
- the deformation of the central portion of the upper plate 511 is the largest and the deformation gradually decreases toward the peripheral portion, but unlike the case of FIG. 14, the direction of deformation is reversed.
- FIG. 16 is a top view of the lower heat module 42 showing the shape and arrangement of the heater plates 401, 402, and 403.
- the sector shape of the heater plates 402 and 403 has a concentric arc with the central heater plate 401.
- the plane area covered by the heater plates 401, 402, 403 is wider than the area corresponding to the mounting surface of the substrate holder 24 mounted on the lower top plate 32. Thereby, the back surface of the substrate holder 24 can be heated uniformly.
- each of the heater plates 401, 402, and 403 is arranged to be spaced apart from each other while being parallel to each other. Thereby, even if the heater plates 401, 402, and 403 are heated and expanded by the electric heaters 404 embedded therein, it is possible to avoid contact with each other.
- the distance between each other is set in advance according to the target heating temperature or the like.
- the heater plates 401, 402, 403 are made of copper
- the diameter of the lower top plate 32 is about 350 mm
- the target heating temperature is 450 ° C. Is set to about 5 mm.
- the heating surfaces of the respective heater plates 401, 402, 403 have the same area. Accordingly, the diameter, the central angle, etc. are designed so that the circular and sector shapes have the same area. Further, in the example of the figure, the radial direction is set to three steps and the number is determined, but the number of radial steps and the number per step can be arbitrarily set. Furthermore, if the thickness of each heater plate 401, 402, 403 is also the same, each heat capacity is also the same, which is more preferable.
- the cooling pipe 407 that functions as a cooler is piped so as to cool one or more of the heater plates 401, 402, and 403.
- a cooling pipe 407 is stretched so as to be in contact with either of the heater plates 402 and 403, and an external pump is controlled so that the refrigerant circulates therethrough.
- the material for the cooling pipe is preferably the same material as the heater plates 401, 402, and 403. Even if it is not the same material, if the linear expansion coefficient is the same, thermal sliding due to a temperature change does not occur on the contact surface, so that it can be applied as a material for a cooling pipe.
- FIG. 17 is a top view of the lower heat module showing the positional relationship between the first support column 418 and the second support column 431.
- the frame 410 has a shape in which a plurality of arm portions are radially extended from an annular portion provided at a central portion.
- the heater plate 401 is fixed with screws 408 at the annular portion, and the heater plates 402 and 403 are similarly fixed with screws 408 at the arm portions.
- the screws 408 are preferably arranged at positions that are rotationally symmetric or bilaterally symmetric on the center line in each heater plate 401, 402, 403.
- the pressure from the hollow pressurizing unit 501 is transmitted to the heater plates 401, 402, and 403 through the plurality of first support columns 418 and the frame 410.
- the heater plates 401, 402, and 403 press and heat the lower top plate 32.
- the hollow pressurizing unit 501 is regarded as an actuator that generates a pressing force in the axial direction of the first support column 418, the pressing force is, for example, when focusing on the first support column 418 that presses one heater plate 402, Transmission is performed in the order of the column 418 ⁇ the heater plate 402 ⁇ the lower top plate 32.
- the plurality of first pressure detection units 419 can detect the pressure applied to each first support column 418 and monitor the output of the hollow pressurization unit 501. And according to the detected pressure, the pressure of the hollow pressurization part 501 can be adjusted, and raising / lowering of the raising / lowering module 60 can be adjusted. Further, when an abnormal pressure exceeding an assumed range is detected, it is possible to perform control to stop pressurization.
- the second support column 431 is arranged on the outer periphery of the hollow pressurizing unit 501, and the upper part of the lower plate serving as the main body of the lower pressure control module 52 is interposed via the second pressure detecting unit. Is installed. Since the main body of the lower pressure control module 52 is made of a rigid material unlike the upper plate 511 of the hollow pressurizing unit 501 that can be elastically deformed, the second support column 431 transmits the pressure from the elevating module 60 to the heater plate 403 as it is. can do. The heater plate 403 further transmits the pressure to the lower top plate 32.
- the pressure applied from the elevating module 60 to the lower top plate 32 can be detected by the second pressure detecting unit 432 provided between the second support column 431 and the lower plate of the lower pressure control module 52. And according to the detected pressure, the raising / lowering of the raising / lowering module 60 can be adjusted, or the pressure of the hollow pressurization part 501 can be adjusted. Further, when an abnormal pressure exceeding an assumed range is detected, it is possible to perform control to stop pressurization.
- the pressure applied to the lower top plate 32 by the hollow pressurizing unit 501 through the first support column 418 is lower by the lifting module 60 through the second support column 431. It is larger than the pressure applied to the top plate 32.
- transformation of the center part of the upper board 511 is the largest, and a deformation
- the pressure applied by the hollow pressurizing unit 501 to the lower top plate 32 through the first support column 418 is the second by the lifting module 60.
- the pressure is smaller than the pressure applied to the lower top plate 32 through the support column 431.
- the pressure which the hollow pressurization part 501 applies to the lower top plate 32 is the smallest in a center part, and a peripheral part is carried out. It gradually grows toward.
- the pressure applied by the hollow pressurizing unit 501 to the lower top plate 32 through the first support column 418 is the lifting module.
- the pressure 60 is the same as the pressure applied to the lower top plate 32 through the second support column 431, and becomes uniform in the plane of the lower top plate 32. That is, the pressure distribution in the surface of the lower top plate 32 can be finely adjusted by adjusting the pressure of the internal fluid in the hollow pressurizing unit 501. Therefore, even when the flatness of the front surface or the back surface of the substrate 22 to be bonded is low, the substrate bonding can be performed by applying a uniform pressure in the surface of the substrate 22 by fine adjustment of the pressure by the hollow pressure unit 501. it can.
- FIG. 18 is a cross-sectional view schematically showing the structure of the lifting module 60.
- the elevating module 60 has a two-stage structure up and down.
- the main EV unit 610 is fastened to the lower pressure control module 52 by a pedestal 611.
- the lower pressure control module 52 can be moved up and down by applying the pedestal 611 to the floor surface, thereby applying pressure to the pair of substrate holders.
- the main EV section 610 is composed of one cylinder-piston mechanism having a large diameter
- the sub EV section 620 is formed by three cylinder-piston mechanisms having a small diameter at intervals of 120 ° in the circumferential direction when viewed from above. Arranged and configured.
- the main EV part 610 and the sub EV part 620 are not stacked one above the other independently, but are devised to raise and lower the base 611 while acting on each other. Each structure will be described below.
- the main EV unit 610 includes a main piston 612 having a pedestal 611 as an upper surface, a main cylinder 613 externally fitted to the main piston, and a bellows 614 connected to the main cylinder 613 and following up and down of the main piston 612.
- the main room 615 which is a space formed between the main cylinder 613 and the main piston 612, is kept airtight even when the main cylinder 613 moves up and down.
- a main valve 616 is connected to the main room 615, and fluid flows in and out from the outside.
- the main room 615 is filled with fluid, and the amount of fluid in the main room 615 can be changed by controlling the inflow and outflow of the fluid with the main valve 616.
- the main piston 612 can be moved up and down by changing the amount of fluid in the main room 615.
- the main cylinder 613 is provided with a pressure sensor 632.
- the pressure sensor 632 detects the pressure of the fluid in the main room 615 and monitors it. And according to the detected pressure, the pressure of the main room 615 can be adjusted and the raising / lowering of the raising / lowering module 60 can be adjusted. Further, when an abnormal pressure exceeding an assumed range is detected, it is possible to perform control to stop pressurization.
- the sub-EV unit 620 includes three sub-EV units 620 as described above in this embodiment, but includes a sub-piston 621 and a sub-cylinder 624 that fits around the sub-piston 621.
- the sub piston 621 is inserted from the outside of the main cylinder 613 into the piston guide 617 provided in the main cylinder 613 and reaches the main room 615.
- a fixing portion 622 for fixing to the main piston 612 is provided at the tip of the sub-piston 621 located inside the main room 615.
- the sub piston 621 is fastened to the main piston 612 by the fixing portion 622.
- the sub-piston 621 includes a piston disk 623 that is fitted on the sub-cylinder 624 at the end opposite to the end where the fixing portion 622 is provided.
- the space in the sub cylinder 624 is divided by the piston disk 623 into an upper sub room 625 located on the main cylinder 613 side and a lower sub room 626 located on the floor surface side.
- Both the upper subroom 625 and the lower subroom 626 are kept airtight.
- An upper sub-valve 627 is connected to the upper sub-room 625, and fluid flows in and out from the outside.
- a lower sub-valve 628 is connected to the lower sub-room 626, and fluid flows in and out from the outside.
- the upper subroom 625 and the lower subroom 626 are filled with fluid. Also, since the total volume of the upper subroom 625 and the lower subroom 626 is always constant, the volume ratio of the upper subroom 625 and the lower subroom 626 is changed by cooperatively controlling the upper subvalve 627 and the lower subvalve 628.
- a pressure sensor 634 is provided in the lower subroom 626.
- the pressure sensor 634 detects and monitors the pressure of the fluid in the lower subroom 626. And according to the detected pressure, the raising / lowering of the raising / lowering module 60 can be adjusted by adjusting the pressure of the lower subroom 626. Further, when an abnormal pressure exceeding an assumed range is detected, it is possible to perform control to stop pressurization.
- a pressure sensor may be provided in the upper subroom 625.
- the pressure sensor can detect the pressure of the fluid in the upper subroom 625 and monitor it.
- FIG. 19 is a cross-sectional view showing a state where the main piston is raised by raising the sub-piston. If the volume of the lower subroom 626 is increased, the volume of the upper subroom 625 is decreased and the sub piston 621 is raised. Since the sub piston 621 is connected to the main piston 612, the main piston 612 is also raised. At this time, the main valve 616 is also cooperatively controlled, and the fluid flows into the main room 615 by an amount corresponding to the volume increase of the main room 615 as the main piston 612 rises.
- the main valve 616 is also cooperatively controlled, and fluid is discharged to the outside by the volume reduction of the main room 615 accompanying the lowering of the main piston 612.
- the sub piston 621 follows also when the main piston 612 is moved up and down by adjusting the amount of fluid in the main room 615 using the main valve 616. Therefore, at this time as well, the upper sub-valve 627 and the lower sub-valve 628 are cooperatively controlled, and the volume change of the upper sub-room 625 and the lower sub-room 626 is allowed as the sub-piston 621 follows.
- air, water, and oil are used as the fluid filled in the main room 615, the upper subroom 625, and the lower subroom 626.
- hydrofluoroether having excellent environmental characteristics is used.
- the control can be varied depending on how the pedestal 611 is to be moved up and down. Specifically, when it is desired to move at a speed equal to or higher than a predetermined speed, the fluid of the sub EV unit 620 that can obtain a large displacement by inflow / outflow of a small volume is controlled, and when a pressure higher than a predetermined pressure is to be applied, The fluid of the main EV unit 610 that remains in a slight displacement even when the large volume flows in and out is controlled. Further, the fluid in the main EV unit 610 may be controlled when it is desired to move at a speed less than a predetermined speed.
- the pressure device 840 includes a position sensor that detects the position of the lower top plate 32.
- the position sensor may be a sensor that directly detects the position of the lower top plate 32, or may be a sensor that detects the position of the main piston 612. In the case of a sensor that detects the position of the main piston 612, the detected value can be converted into the position of the lower top plate 32 by the control unit and used for position control of the lower top plate 32.
- the pressurizing device 840 can adjust the lifting / lowering of the lifting / lowering module 60 according to the detected position. In addition, when an abnormal position exceeding an assumed range is detected, it is possible to perform control to stop the lifting and lowering of the lifting module 60.
- FIG. 20 is a block diagram of the pressurization control system 700 of the pressurizer 840.
- the pressure control system includes a portion that integrally controls the lower top plate as a whole and a portion that controls the inner periphery of the lower top plate.
- the part that integrally controls the lower top plate as a whole includes a common command setting unit 710, a position controller 722, a pressure controller 724, and a control switching unit 726.
- the part that controls the inner periphery of the lower top plate includes a common command setting unit 710, a pressure controller 742, and a control switching unit 744.
- the command setting unit 710 is a setting unit that sets a position command, a pressure command, and a differential pressure command to be given to the position controller 722, the pressure controller 724, and the pressure controller 742.
- the target position set value, the rising speed of the lower top plate 32, and the like can be input and set.
- the target pressure set value, the pressurization speed, etc. can be input and set.
- the sub-EV electromagnetic valve 728 adjusts the flow rate of the fluid injected into the sub-cylinder 624 according to the control signal, moves the main piston 612 up and down, and controls the position of the lower top plate 32.
- the main valve 616 adjusts the flow rate of the fluid injected into the main cylinder 613 according to the control signal, moves the main piston 612 up and down, and controls the position of the lower top plate 32.
- the sub-EV electromagnetic valve 728 includes an upper sub-valve 627 and a lower sub-valve 628.
- the sub piston 621 is raised while controlling the flow rate of the fluid injected into the lower sub room by controlling the lower sub valve 628.
- the sub piston 621 is lowered while controlling the flow rate of the fluid injected into the upper sub room by controlling the upper sub valve 627.
- the position controller 722 is a PDD (proportional, differential, differential action) controller.
- PDD proportional, differential, differential action
- the main piston 612 can quickly approach the target position set value in the constant value control, and the main piston 612 can quickly follow the target position set value in the additional value control. it can.
- the pressure controller 724 is a PI (proportional, integral operation) controller. With the PI operation control, a pressure can be gently applied to the substrate holder pair.
- the control switching unit 726 performs switching control between position control and pressure control. That is, the control switching unit 726 selects one of the control signals from the position controller 722 and the pressure controller 724 to control the sub-EV electromagnetic valve 728 and the main valve 616. For example, when there is still a sufficient distance until the pair of substrate holders placed on the lower top plate 32 touches the upper top plate 31, the lift module 60 is controlled by a signal from the position controller 722. The process time can be shortened by raising the lower top plate 32 at a higher speed and bringing it closer to the upper top plate 31. On the other hand, when the upper top plate 31 and the lower top plate 32 sandwich the substrate holder pair and pressurize, it is possible to pressurize at the target pressure value more accurately by controlling the elevating module 60 by the control signal from the pressure controller 724. it can.
- the control switching unit 726 also monitors the pressure value detected by the pressure sensor 634 installed in the sub cylinder 624 or the pressure value detected by the pressure sensor 632 installed in the main cylinder 613. When the pressure sensor 634 or the pressure sensor 632 detects an abnormal pressure, the control switching unit 726 closes the sub-EV solenoid valve and the main valve 616 and stops the lifting / lowering of the lifting / lowering module 60, thereby adding to the abnormal situation. Breakage of the pressure device 840 can be prevented.
- the position sensor 730 detects and feeds back the position of the lower top plate 32 as needed.
- the second pressure detector 432 detects and feeds back the pressure applied to the lower top plate 32 from the lifting module 60 as needed.
- Pressure controller 742 the target differential pressure set (P d) in the differential pressure command 716, the pressure which the pressure by the first pressure detector 419 has detected (P 1) and the second pressure detecting unit 432 detects (P 2 ),
- the pressure (P 2 ) detected by the second pressure detection unit 432 is a pressure applied to the peripheral portion of the lower top plate 32 from the elevating module 60, and the pressure (P 1 ) detected by the first pressure detection unit 419 is hollow.
- the control of the differential pressure is to control the pressure distribution in the surface of the lower top plate 32, that is, to control the in-plane uniformity of the applied pressure to the substrate holder pair.
- the pressure difference (P 1 -P 2) is preset predetermined value or less, for example 0.05MPa to be less than may control fluid to and from the hollow pressing 501.
- the pressure difference (P 1 -P 2) may control the fluid to and from the hollow pressing 501 to zero.
- a predetermined differential pressure range can be determined by a differential pressure command.
- the control switching unit 744 monitors the pressure value detected by the pressure sensor 436 installed in the hollow pressurizing unit 501. When the pressure sensor 436 detects an abnormal pressure, the control switching unit 744 closes the valve 502 and stops the control of the fluid in the hollow pressurizing unit 501, thereby preventing the pressurization device 840 from being destroyed in an abnormal situation. can do.
- the elevating module 60 is lowered and the substrate holder pair is placed on the lower top plate 32.
- the control switching unit 726 selects control of the lifting module 60 by the position controller 722.
- the position controller 722 adjusts the main valve 616 by PDD operation, and even if a large volume of fluid is injected, By switching to controlling the fluid of the main EV unit 610 that remains at a small displacement, the elevating module 60 is raised.
- the pressure of the hollow pressurizing unit 501 is controlled through controlling the amount of fluid injected into the pressure unit 501.
- the target differential pressure setting value (P d ) is set to zero and the fluid to be taken in and out of the hollow pressurizing unit 501 is controlled so that the differential pressure (P 1 -P 2 ) is zero
- the first differential pressure is set.
- the pressure (P 1 ) detected by the pressure detection unit 419 follows the pressure (P 2 ) detected by the second pressure detection unit 432, and the pressure in the surface of the lower top plate 32 is changed in the pressurization process. It can be controlled uniformly, and breakage of the hollow pressurizing part 501 can be prevented.
- the target differential pressure setting value (P d ) is set to a certain constant value
- the pressure (P 1 ) detected by the first pressure detection unit 419 is always the pressure (P 2 ) detected by the second pressure detection unit 432.
- the differential pressure (P d ) is controlled so as to be pressurized while maintaining a constant pressure distribution between the central portion and the peripheral portion of the lower top plate 32 according to the purpose. .
- the target differential pressure setting value (P d ) is set to a constant positive value. Then, the pressure (P 1 ) detected by the first pressure detection unit 419 is controlled to be larger than the pressure (P 2 ) detected by the second pressure detection unit 432. Further, when the upper plate 511 of the hollow pressurizing part 501 is recessed and the pressure around the lower top plate 32 is made larger than the central part, the target differential pressure setting value (P d ) is set to a constant negative value. If set, the pressure (P 1 ) detected by the first pressure detector 419 is controlled to be smaller than the pressure (P 2 ) detected by the second pressure detector 432.
- the pressure controller 724 does not feed back the measurement value (P 2 ) of the second pressure detection unit 432, but the pressure of the main cylinder 613 detected by the pressure sensor 632. (P 3 ) is fed back, the main valve 616 is adjusted by PI operation based on the deviation (P t ⁇ P 3 ), the fluid of the main EV unit 610 is controlled, and the elevating module 60 can be moved up and down. it can.
- the pressure controller 742 detects the pressure (P 4 ) detected by the pressure sensor 436 instead of the pressure (P 1 ) detected by the first pressure detection unit 419, and feeds back the pressure (P 4 ) of the hollow pressurization unit 501 so that the deviation ( Based on P d ⁇ P 4 + P 2 ) or deviation (P d ⁇ P 4 + P 3 ), the valve 502 of the hollow pressurizing unit 501 is adjusted to adjust the amount of fluid to be injected into the hollow pressurizing unit 501 or the hollow pressure The pressure of the pressure unit 501 can be adjusted.
- the pressure of the hollow pressurization unit 501 is changed based on the difference between the pressure detected by the first pressure detection unit 419 and the pressure detected by the second pressure detection unit 432. It is adjusted.
- the form of adjusting the pressure is not limited to this.
- the pressure of the hollow pressurization unit 501 may be adjusted based on the pressure detected from at least any two of the plurality of first pressure detection units 419.
- the detected pressure by the first pressure detecting unit 419 close to the center as P 1 a first pressure away from the center pressure may be adjusted as described above the detected pressure by the detection unit 419 as P 2.
- the average of the pressures detected by the plurality of first pressure detectors 419 equidistant from the center may be set as P 1 and P 2 , respectively.
- the pressure of the hollow pressurizing unit 501 is transmitted to the lower top plate 32 via the first support column 418.
- the form of transmitting pressure is not limited to this.
- the pressure of the hollow pressurizing part 501 is transmitted to the lower top plate 32 by contacting the upper surface of the hollow pressurizing part 501 with the lower top plate 32 or by interposing a plate-like member therebetween. Also good. In these cases, the second support column 431 may also be omitted.
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Abstract
Description
[先行技術文献]
[特許文献]
[特許文献1]特開2009-49066号公報
Claims (32)
- 被加圧体が載置される載置面を有するステージと、
前記載置面の面内の圧力分布を可変にする圧力可変部と、
前記圧力可変部の圧力を検出する複数の圧力検出部と
を備える加圧モジュール。 - 前記圧力可変部は、前記複数の圧力検出部で検出された圧力に基づいて、前記載置面の面内の圧力分布を変更する制御部をさらに備える請求項1に記載の加圧モジュール。
- 前記圧力可変部は、外部からの流体の出入により内圧が調整される袋状の中空加圧部を有する請求項1に記載の加圧モジュール。
- 前記複数の圧力検出部は、第1の圧力検出部および第2の圧力検出部を有し、
前記第1の圧力検出部は、前記中空加圧部上に配され、
前記第2の圧力検出部は、前記中空加圧部の外周に配された外周部上に互いに配され、
前記圧力可変部は、前記第1の圧力検出部により検出される圧力と前記第2の圧力検出部により検出される圧力との差に基づいて、前記中空加圧部に出入させる前記流体を制御する制御部を有する請求項3に記載の加圧モジュール。 - 前記ステージを押圧する第1の支柱部および第2の支柱部をさらに備え、
前記第1の圧力検出部および前記第1の支柱部は、前記中空加圧部上に互いに直列的に配され、
前記第2の圧力検出部および前記第2の支柱部は、前記外周部上に互いに直列的に配される請求項4に記載の加圧モジュール。 - 前記複数の圧力検出部は前記中空加圧部上に配され、
前記圧力可変部は、一の前記圧力検出部により検出される圧力と他の前記圧力検出部により検出される圧力との差に基づいて、前記中空加圧部に出入させる前記流体を制御する制御部を有する請求項3に記載の加圧モジュール。 - 前記制御部は、前記第1の圧力検出部により検出される圧力と前記第2の圧力検出部により検出される圧力との差が、予め定められた値以下となるように前記中空加圧部に出入させる流体を制御する請求項4に記載の加圧モジュール。
- 前記制御部は、前記第1の圧力検出部により検出される圧力と前記第2の圧力検出部により検出される圧力との差が、零となるように前記中空加圧部に出入させる流体を制御する請求項7に記載の加圧モジュール。
- 前記制御部は、前記ステージにおける中央部分を周辺部分よりも突出させる場合に、前記第1の圧力検出部により検出される圧力が前記第2の圧力検出部により検出される圧力よりも大きくなるように前記中空加圧部に出入させる流体を制御する請求項4に記載の加圧モジュール。
- 前記制御部は、前記ステージにおける中央部分を周辺部分よりも凹ませる場合に、前記第2の圧力検出部により検出される圧力が前記第1の圧力検出部により検出される圧力よりも大きくなるように前記中空加圧部に出入させる流体を制御する請求項4に記載の加圧モジュール。
- 前記圧力可変部は、圧電素子を有する請求項1に記載の加圧モジュール。
- 前記載置面とは反対の面に一端が設置された支柱部を備え、
前記圧力可変部は、前記支柱部の他端に設置され、前記ステージに加えられる押圧力を前記支柱部を介して前記圧電素子により検出すると共に、前記圧電素子に電力を供給することにより、前記ステージに押圧力を加えるように前記支柱部を押すロードセルを有する請求項11に記載の加圧モジュール。 - ひとつの前記ステージに対して複数の前記支柱部と前記ロードセルを備える請求項12に記載の加圧モジュール。
- 前記ステージに載置された被加圧体が均等に押圧されるように複数の前記ロードセルが制御される請求項13に記載の加圧モジュール。
- 昇降機の上方に前記ロードセルが載置される請求項12に記載の加圧モジュール。
- 前記ステージと前記支柱部の間に設けられる加熱モジュールと、
前記支柱部が貫通するように設けられる熱反射板と
を更に備える請求項12に記載の加圧モジュール。 - 前記複数の圧力検出部のそれぞれに設置された複数の支柱部を更に備え、
前記圧力可変部の内圧が調整されることにより、前記複数の支柱部を介して前記ステージが押圧される請求項1に記載の加圧モジュール。 - 前記圧力可変部は、外部から出入させる流体を制御することにより内圧を調整できる袋状の中空加圧部を有する請求項17に記載の加圧モジュール。
- 前記ステージと前記複数の支柱部との間に、前記ステージを加熱するための加熱部を備える請求項17に記載の加圧モジュール。
- 前記加熱部は複数の加熱ブロックにより構成される請求項19に記載の加圧モジュール。
- 前記複数の加熱ブロックを支持するフレームを更に備え、
前記複数の支柱部のそれぞれは、前記フレームに連結されている請求項20に記載の加圧モジュール。 - 前記ステージは円形であり、前記フレームは前記円形の中心から放射状に形成されている請求項21に記載の加圧モジュール。
- 前記圧力可変部と前記加熱部との間に熱反射板を備える請求項19に記載の加圧モジュール。
- 前記熱反射板は前記複数の支柱部を貫通させて設置される請求項23に記載の加圧モジュール。
- 前記熱反射板は、前記複数の支柱部の軸方向に互いに離間して複数設置される請求項24に記載の加圧モジュール。
- 更に前記軸方向に平行に熱反射板を備える請求項25に記載の加圧モジュール。
- 前記熱反射板は、金属板である請求項23に記載の加圧モジュール。
- 前記熱反射板の表面には、多層膜が形成されている請求項23に記載の加圧モジュール。
- 前記多層膜は、前記ステージの目標加熱温度近傍の輻射線の波長を反射する請求項28に記載の加圧モジュール。
- 前記複数の圧力検出部の少なくとも1つが異常圧力を検出した場合には、加圧を停止する請求項1に記載の加圧モジュール。
- 請求項1から30のいずれか1項に記載の加圧モジュールを対向させて配置した加圧装置。
- 請求項1から請求項30のいずれかに記載の加圧モジュールと、
前記加圧モジュールの前記ステージに対向して配された他のステージと
を備え、
前記ステージおよび前記他のステージの間に載置された複数の基板を貼り合わせる基板貼り合せ装置。
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KR1020127010098A KR101809760B1 (ko) | 2009-09-28 | 2010-09-28 | 가압 모듈, 가압 장치 및 기판 접합 장치 |
JP2011532916A JPWO2011036900A1 (ja) | 2009-09-28 | 2010-09-28 | 加圧モジュール、加圧装置、基板貼り合せ装置、基板貼り合せ方法および貼り合せ基板 |
CN2010800532520A CN102630334A (zh) | 2009-09-28 | 2010-09-28 | 加压模块、加压装置以及基板贴合装置 |
EP10818577.8A EP2485244A4 (en) | 2009-09-28 | 2010-09-28 | PRESSURE APPLICATION MODULE, PRINT APPLICATION DEVICE AND SUBSTRATE BINDING DEVICE |
US13/431,764 US20120251789A1 (en) | 2009-09-28 | 2012-03-27 | Pressuring module, pressuring apparatus, substrate bonding apparatus, substrate bonding method, and bonded substrate |
US14/299,511 US9498944B2 (en) | 2009-09-28 | 2014-06-09 | Pressuring module, pressuring apparatus, substrate bonding apparatus, substrate bonding method, and bonded substrate |
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JP6294324B2 (ja) * | 2012-08-31 | 2018-03-14 | セミコンダクター テクノロジーズ アンド インストゥルメンツ ピーティーイー リミテッド | ウェハー及びフィルムフレームの両方のための単一超平坦ウェハーテーブル構造 |
JP5956933B2 (ja) | 2013-01-15 | 2016-07-27 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US9058974B2 (en) * | 2013-06-03 | 2015-06-16 | International Business Machines Corporation | Distorting donor wafer to corresponding distortion of host wafer |
US9947637B2 (en) | 2013-11-01 | 2018-04-17 | Nikon Corporation | System and method for clamping wafers together in alignment using pressure |
KR101697487B1 (ko) * | 2013-11-26 | 2017-02-01 | 안성룡 | 글래스 합착장치 |
CH708932B1 (en) * | 2013-12-09 | 2017-04-13 | Besi Switzerland Ag | Downholder for holding down the substrate locations of a substrate for the purpose of mounting semiconductor components. |
CN106458066B (zh) * | 2015-03-30 | 2019-08-27 | 株式会社藤仓 | 载荷检测装置 |
KR101741828B1 (ko) * | 2015-11-30 | 2017-05-31 | 주식회사 아이에스시 | 푸셔장치 |
KR101636069B1 (ko) * | 2015-12-08 | 2016-07-11 | 주식회사 라파스 | 마이크로구조체 제조방법 |
JP2018010925A (ja) * | 2016-07-12 | 2018-01-18 | 東京エレクトロン株式会社 | 接合装置 |
TWI607207B (zh) * | 2016-12-22 | 2017-12-01 | 矽品精密工業股份有限公司 | 模封設備 |
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KR102395194B1 (ko) | 2017-06-21 | 2022-05-06 | 삼성전자주식회사 | 웨이퍼 본딩 장치 및 그 장치를 포함한 웨이퍼 본딩 시스템 |
CN109052315B (zh) * | 2018-08-01 | 2021-07-23 | 南方科技大学 | 一种二维材料的转移系统 |
US11587807B2 (en) * | 2018-10-28 | 2023-02-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Annealing apparatus and method thereof |
KR102619624B1 (ko) | 2018-11-13 | 2023-12-29 | 삼성전자주식회사 | 기판합착 장치 및 방법 |
JP7488062B2 (ja) * | 2020-03-02 | 2024-05-21 | 東京エレクトロン株式会社 | 接合装置、接合システム、接合方法および記憶媒体 |
KR20220029052A (ko) | 2020-09-01 | 2022-03-08 | 삼성전자주식회사 | 레이저 본딩 시스템 및 레이저 본딩 장치 |
WO2023032166A1 (ja) * | 2021-09-03 | 2023-03-09 | ヤマハロボティクスホールディングス株式会社 | 部材間接合装置及び接合部材製造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000003841A (ja) * | 1998-06-15 | 2000-01-07 | Hamamatsu Photonics Kk | 基板の接着方法 |
JP2004268113A (ja) * | 2003-03-11 | 2004-09-30 | Fujitsu Ltd | 基板貼合せ装置及び基板貼合せ方法 |
JP2005109219A (ja) * | 2003-09-30 | 2005-04-21 | Shin Etsu Handotai Co Ltd | 半導体貼り合わせ装置 |
JP2008258426A (ja) * | 2007-04-05 | 2008-10-23 | Nikon Corp | 基板接合装置、基板接合方法および基板ホルダ |
JP2008262971A (ja) * | 2007-04-10 | 2008-10-30 | Nikon Corp | 基板ホルダ、基板接合装置および基板接合方法 |
JP2009049066A (ja) | 2007-08-14 | 2009-03-05 | Nikon Corp | ウェハ接合装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4003A (en) * | 1845-04-16 | Cochrane | ||
JP2501493B2 (ja) * | 1990-06-05 | 1996-05-29 | 株式会社名機製作所 | 板体プレス装置 |
JP3366560B2 (ja) * | 1996-11-08 | 2003-01-14 | 株式会社東洋工機 | プレス機械 |
US6938505B2 (en) * | 2002-08-13 | 2005-09-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chamber wafer detection |
CN100470767C (zh) * | 2004-03-26 | 2009-03-18 | 富士胶片株式会社 | 接合衬底的装置及方法 |
JP4476764B2 (ja) * | 2004-03-26 | 2010-06-09 | 富士フイルム株式会社 | 基板接合装置及び方法 |
WO2006009254A1 (ja) * | 2004-07-23 | 2006-01-26 | Nikon Corporation | 支持装置、ステージ装置、露光装置、及びデバイスの製造方法 |
JP4866582B2 (ja) | 2005-09-01 | 2012-02-01 | 株式会社ケミトロニクス | 圧着機構 |
TW200733226A (en) * | 2006-01-18 | 2007-09-01 | Shibaura Mechatronics Corp | Apparatus for treating substrates and method of treating substrates |
US7948034B2 (en) * | 2006-06-22 | 2011-05-24 | Suss Microtec Lithography, Gmbh | Apparatus and method for semiconductor bonding |
EP2053635A4 (en) * | 2006-06-29 | 2010-09-22 | Nikon Corp | METALLIZING APPARATUS OF WAFER |
KR101367661B1 (ko) | 2006-08-25 | 2014-02-27 | 엘아이지에이디피 주식회사 | 척의 평행도 및 평편도 조절유닛을 가진 기판 합착장치 |
JP4247296B1 (ja) * | 2008-02-22 | 2009-04-02 | 三菱重工業株式会社 | 積層接合装置および積層接合方法 |
JP5434471B2 (ja) * | 2009-10-21 | 2014-03-05 | 株式会社ニコン | 加圧装置、基板接合装置、加圧方法および基板接合方法 |
-
2010
- 2010-09-28 KR KR1020127010098A patent/KR101809760B1/ko active IP Right Grant
- 2010-09-28 JP JP2011532916A patent/JPWO2011036900A1/ja active Pending
- 2010-09-28 TW TW099132762A patent/TWI550680B/zh not_active IP Right Cessation
- 2010-09-28 CN CN201410575558.2A patent/CN104377151B/zh not_active Expired - Fee Related
- 2010-09-28 EP EP10818577.8A patent/EP2485244A4/en not_active Withdrawn
- 2010-09-28 WO PCT/JP2010/005823 patent/WO2011036900A1/ja active Application Filing
- 2010-09-28 CN CN2010800532520A patent/CN102630334A/zh active Pending
- 2010-09-28 EP EP15150438.8A patent/EP2879163A1/en not_active Withdrawn
-
2012
- 2012-03-27 US US13/431,764 patent/US20120251789A1/en not_active Abandoned
-
2014
- 2014-06-09 US US14/299,511 patent/US9498944B2/en active Active
- 2014-09-11 JP JP2014185113A patent/JP6070662B2/ja not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000003841A (ja) * | 1998-06-15 | 2000-01-07 | Hamamatsu Photonics Kk | 基板の接着方法 |
JP2004268113A (ja) * | 2003-03-11 | 2004-09-30 | Fujitsu Ltd | 基板貼合せ装置及び基板貼合せ方法 |
JP2005109219A (ja) * | 2003-09-30 | 2005-04-21 | Shin Etsu Handotai Co Ltd | 半導体貼り合わせ装置 |
JP2008258426A (ja) * | 2007-04-05 | 2008-10-23 | Nikon Corp | 基板接合装置、基板接合方法および基板ホルダ |
JP2008262971A (ja) * | 2007-04-10 | 2008-10-30 | Nikon Corp | 基板ホルダ、基板接合装置および基板接合方法 |
JP2009049066A (ja) | 2007-08-14 | 2009-03-05 | Nikon Corp | ウェハ接合装置 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2485244A4 |
Also Published As
Publication number | Publication date |
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TWI550680B (zh) | 2016-09-21 |
KR20120091095A (ko) | 2012-08-17 |
TW201135802A (en) | 2011-10-16 |
US20120251789A1 (en) | 2012-10-04 |
EP2485244A1 (en) | 2012-08-08 |
US20140262045A1 (en) | 2014-09-18 |
CN104377151B (zh) | 2019-01-01 |
JPWO2011036900A1 (ja) | 2013-02-14 |
EP2879163A1 (en) | 2015-06-03 |
CN104377151A (zh) | 2015-02-25 |
KR101809760B1 (ko) | 2017-12-15 |
EP2485244A4 (en) | 2014-07-30 |
CN102630334A (zh) | 2012-08-08 |
JP6070662B2 (ja) | 2017-02-01 |
JP2015043432A (ja) | 2015-03-05 |
US9498944B2 (en) | 2016-11-22 |
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