WO2011016427A1 - エネルギー付与装置およびエネルギー付与方法 - Google Patents
エネルギー付与装置およびエネルギー付与方法 Download PDFInfo
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- WO2011016427A1 WO2011016427A1 PCT/JP2010/063038 JP2010063038W WO2011016427A1 WO 2011016427 A1 WO2011016427 A1 WO 2011016427A1 JP 2010063038 W JP2010063038 W JP 2010063038W WO 2011016427 A1 WO2011016427 A1 WO 2011016427A1
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- Prior art keywords
- energy
- light
- applying
- irradiated
- adhesive sheet
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 18
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 abstract description 52
- 230000001070 adhesive effect Effects 0.000 abstract description 52
- 239000012790 adhesive layer Substances 0.000 abstract description 22
- 238000010438 heat treatment Methods 0.000 abstract description 13
- 230000004888 barrier function Effects 0.000 abstract description 8
- 230000000052 comparative effect Effects 0.000 description 12
- 229910001220 stainless steel Inorganic materials 0.000 description 7
- 239000010935 stainless steel Substances 0.000 description 7
- 238000001723 curing Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 230000005251 gamma ray Effects 0.000 description 4
- 238000012854 evaluation process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
- B01J19/122—Incoherent waves
- B01J19/123—Ultraviolet light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Definitions
- the present invention relates to an energy application device and an energy application method for irradiating light to a photoreactive object to be photoreacted.
- a protective tape is applied to the circuit surface of the wafer to perform back surface grinding, or a dicing tape is applied to divide into a plurality of chips. Processing is performed.
- the tape used for such treatment employs a photo-curing type (photoreactive type) adhesive, and after the treatment as described above, the adhesive is irradiated with light by an energy application device. Is hardened (photoreacted) to weaken the adhesive force so that the wafer can be easily peeled away without damage (see, for example, Patent Document 1).
- the light emitting diode mounting member of the ultraviolet irradiation device of Patent Document 1 includes an ultraviolet light emitting diode arranged in a straight line, a cylindrical lens that collects light from the ultraviolet light emitting diode and irradiates the wafer, and a light emitting diode mounting member.
- a cooling fan for cooling is disposed. Then, the ultraviolet irradiation device irradiates the entire surface of the adhesive tape with the ultraviolet light collected by the cylindrical lens by moving the light emitting diode mounting member heated by the lighting of the ultraviolet light emitting diode while cooling it with a cooling fan. .
- the present invention has been devised paying attention to the above inconveniences, and an object of the present invention is to provide an energy applying apparatus and an energy applying method capable of appropriately photoreacting a photoreactive type irradiated object. It is to provide.
- a light irradiation device that irradiates a high-pressure mercury lamp even with an adhesive layer that cannot be properly cured by the ultraviolet irradiation device described in Patent Document 1. It has been found that the use of can cure properly. As a result, in the ultraviolet irradiation device as in Patent Document 1, only the light energy can be given to the adhesive layer, but in the high pressure mercury lamp, the heat energy is given in addition to the light energy. Was found to be cured.
- the energy application device of the present invention is an energy application device that irradiates light to a photoreactive object and causes the object to photoreact, and applies light energy of a predetermined wavelength to the object to be irradiated.
- the irradiated object in the energy application device of the present invention, it is preferable that the irradiated object can be photoreacted by ultraviolet rays, and the first energy application unit applies ultraviolet rays having a predetermined wavelength.
- the said to-be-irradiated body is an adhesive sheet which has an ultraviolet curable adhesive layer and is affixed on a semiconductor wafer.
- the first energy applicator provides light energy emitted from at least one light emitting diode.
- the second energy application means supplies at least one energy of heat, vibration, sound, ultrasonic wave, electron beam, gamma ray, X-ray, infrared ray to the second energy. It is preferable to give it as energy.
- the energy application method of the present invention is an energy application method for irradiating a photoreactive object to be irradiated with light and causing the object to be photoreacted.
- the first energy from the first energy application means using energy application means and second energy application means for generating energy other than light energy or light energy other than the predetermined wavelength as second energy.
- the configuration is adopted.
- the second energy application means supplies at least one energy of heat, vibration, sound, ultrasonic wave, electron beam, gamma ray, X-ray, and infrared ray to the first energy. It is preferable to generate as energy of 2.
- curing energy energy required for curing
- energy required for curing cannot be photoreactive only with light energy of a predetermined wavelength, that is, only with light energy of a single wavelength
- the irradiated object can be appropriately cured over the energy barrier.
- the irradiated object whose photoreaction starts by the ultraviolet rays can be appropriately photoreacted.
- an adhesive sheet having an adhesive layer and affixed to a semiconductor wafer is applied as an irradiated body, the adhesive sheet is affixed to the wafer and subjected to a predetermined treatment, and then cured appropriately.
- the adhesive sheet can be easily peeled off so as not to break.
- a light emitting diode adopted as a 1st energy provision means, the power saving and lifetime improvement of an energy provision apparatus can be achieved.
- at least one energy among heat, vibration, sound, ultrasonic wave, electron beam, gamma ray, X-ray and infrared ray is applied as the second energy, the irradiated object can be appropriately photoreacted.
- the side view of the energy provision apparatus which concerns on 1st Embodiment of this invention. Explanatory drawing of the positional relationship of line light, a heating means, and a wafer.
- the side view of the energy provision apparatus which concerns on 2nd Embodiment of this invention.
- the graph which shows the relationship between the light quantity of the light source which irradiates light to the dicing tape which concerns on the Example of this invention, and adhesive force.
- an energy applying device 1 is a device that irradiates light to an adhesive sheet S as an irradiated body attached to one surface of a wafer W, and is integrated with a ring frame RF via a mounting sheet MS.
- the adhesive sheet S is an adhesive sheet having an ultraviolet curable (photoreactive) adhesive layer, and the adhesive layer starts to cure (photoreaction) when irradiated with light of around 365 nm. Designed to.
- the table 2 includes a suction port (not shown), and is configured to be able to suck and hold the wafer W and the ring frame RF from the mounting sheet MS side.
- the single-axis robot 3 is configured such that the slider 31 is fixed to the lower surface of the table 2 and the table 2 is slid in the X-axis direction (left-right direction in FIG. 1) via the slider 31.
- the light emitting means 4 is provided in a U-shaped cross-sectional view, and a frame 43 whose longitudinal direction is arranged along the Y-axis direction, and a light emitting source arranged inside the frame 43 along the Y-axis direction.
- a plurality of LEDs (Light Emitting Diode) and a cylindrical lens 45 provided in the opening 431 on the lower surface side of the frame 43 in FIG. 1 and disposed so as to face all the LEDs 44 are provided. All the LEDs 44 emit light having a single wavelength (ultraviolet light) having a peak wavelength of 365 nm as the first energy, and the emitted light is collected by a cylindrical lens 45, and as shown in FIG.
- Line light L extending in the Y-axis direction (direction perpendicular to the moving direction of the table 2) is formed in the same plane as the adhesive layer surface of S.
- the adhesive layer has a thickness, but the thickness is about several tens of ⁇ m and is expressed as a surface because it is extremely thin with respect to the width of the line light L.
- the single wavelength light in the present invention may include light having wavelengths around the center of 365 nm.
- the heating means 6 is provided on the left side of the light emitting means 4 in FIG. 1 and includes a coil 62 provided in a heat shield plate 61 having an opening 611 in the lower part of FIG. 1, and generates heat as second energy. It is supposed to be.
- an adhesive sheet S is affixed to the circuit surface (upper surface in FIG. 1) by a conveying means (not shown), and the wafer is integrated with the ring frame RF from the opposite side of the circuit surface via the mounting sheet MS.
- W is placed on the table 2 stopped at the position indicated by the solid line in FIG. After the mounting, the wafer W and the ring frame RF are sucked and held from the mounting sheet MS side by a suction port (not shown).
- the control means 8 outputs a command signal to the first and second power supply means 5 and 7 so as to supply electricity to the light emitting means 4 and the heating means 6, respectively.
- the LED 44 emits light having a single wavelength of 365 nm (ultraviolet light) to form line light L. Further, in the heating means 6, the coil 62 starts to generate heat. Then, the control means 8 controls the single-axis robot 3 and moves the table 2 in the direction of arrow D, so that the adhesive sheet S placed on the upper surface of the table 2 crosses the line light L, and the adhesive sheet S Light energy (ultraviolet energy) having a wavelength of 365 nm is applied to the entire surface (first energy applying step).
- the movement of the table 2 in the direction of arrow D is continued, so that the adhesive sheet S placed on the upper surface of the table 2 passes under the heating means 6, and thermal energy is applied to the entire surface of the adhesive sheet S. Is applied (second energy application step).
- the adhesive layer of the adhesive sheet S is cured by being imparted with the light energy as the first energy and the thermal energy as the second energy.
- the wafer W integrated with the ring frame RF is transferred to an adhesive sheet peeling device or the like via a transfer device or the like (not shown). After the adhesive sheet S is peeled off, the wafer W is transferred to a dicing process or the like. It will be.
- the first embodiment as described above has the following effects. That is, since the energy applying device 1 gives thermal energy after giving light energy to the adhesive sheet S, even if the adhesive layer does not reach the curing level only by light energy, heat energy is given as another energy. Since it gives to the adhesive sheet S, the adhesive layer of the adhesive sheet S can be appropriately cured over the energy barrier.
- FIG. 3 is a side view showing an energy application device 1A according to the second embodiment.
- the difference between the energy applying apparatus 1A of the second embodiment and the energy applying apparatus 1 of the first embodiment is that a vibration generating means 6A is provided as a second energy applying means instead of the heating means 6.
- a vibration generating means 6A As the vibration generating means 6A, a vibrating body 61A provided inside the table 2 and a speaker 62A provided above the table 2 can be exemplified.
- the speaker 62 ⁇ / b> A and the vibrating body 61 ⁇ / b> A emit sound waves and vibrations by the power supplied from the second power supply unit 7, and the sound waves and vibrations cause the second adhesive sheet S attached to the wafer W on the table 2 to be attached to the second sheet. Vibration energy is given as the energy.
- a known ultrasonic vibration device a known vibrator using an electric motor or air, or the like can be employed.
- the vibration generating means 6A imparts vibration energy as the second energy to the adhesive sheet S (second energy application step), so that the adhesive layer of the adhesive sheet S is appropriately cured over the energy barrier. Can do.
- the second embodiment as described above has the following effects. That is, since the energy applying device 1A gives vibration energy after giving light energy to the adhesive sheet S, even if the adhesive layer does not reach the curing level only by light energy, vibration energy is given as another energy. By providing the adhesive sheet S, the adhesive layer of the adhesive sheet S can be appropriately cured over the energy barrier.
- Comparative Example 1 the adhesive strength when the adhesive layer of the dicing tape (adhesive sheet) was photocured with light having a plurality of wavelengths including 365 nm was evaluated.
- a dicing tape (model: D-210, width 25 mm) manufactured by Lintec Co., Ltd. was applied to a stainless steel plate with a sheet applicator (model: RAD-3510) manufactured by Lintec Co., Ltd. (dicing tape application process).
- the dicing tape affixed to the stainless steel plate was irradiated with light having a plurality of wavelengths including 365 nm using a UV irradiation apparatus (model: RAD-2000) manufactured by Lintec Corporation (multiple wavelength light irradiation step). Then, the dicing tape was peeled from the stainless steel plate by a tensile / compression tester (model: RTD-1225) manufactured by A & D Co., Ltd., and the adhesive strength at the time of peeling was evaluated (evaluation process). Moreover, the sample from which the light quantity in a multiple wavelength light irradiation process differs was created, and the same evaluation was performed.
- the measuring method of the adhesive force used the JISZ0237 test method (peeling speed: 300 mm / min, peeling angle: 180 degree
- Comparative Example 2 the adhesive strength when the adhesive layer of the dicing tape was photocured with light having a single wavelength of 365 nm was evaluated.
- a single wavelength of 365 nm was obtained with a high power UV-LED irradiator (model: UV-400) manufactured by Keyence Corporation Irradiated with light (single wavelength light irradiation step).
- the adhesive force was evaluated by the same evaluation process as Comparative Example 1.
- the sample from which the light quantity in a single wavelength light irradiation process differs was created, and the same evaluation was performed. As shown in FIG. 4, the adhesive force changed between 300 to 350 mN / 25 mm, which was higher than that of Comparative Example 1.
- Example 1 the adhesive force when the adhesive layer of the dicing tape was photocured using light having a single wavelength of 365 nm and heat was evaluated.
- the dicing tape stuck on the stainless steel plate was irradiated with light having a single wavelength of 365 nm by the same dicing tape sticking step and single wavelength light irradiation step as in Comparative Example 2.
- the dicing tape was heated with a spot heater (model: SH01 / 1100-035K) manufactured by Takezuna Manufacturing Co., Ltd. (heating process), and the adhesive strength was evaluated by the same evaluation process as in Comparative Examples 1 and 2. .
- Example 2 the adhesive strength was evaluated when the adhesive layer of the dicing tape was photocured using light having a single wavelength of 365 nm and high frequency.
- the dicing tape stuck on the stainless steel plate was irradiated with light having a single wavelength of 365 nm by the dicing tape sticking step and the single wavelength light irradiation step similar to those in Comparative Example 2 and Example 1.
- a high frequency was applied to the stainless steel plate with the dicing tape affixed by a high-frequency generator (model: DIHS105-MT1) manufactured by Hydec Co.
- the power was evaluated.
- the sample from which the light quantity in a single wavelength light irradiation process differs was created, and the same evaluation was performed.
- the adhesive force changed between 230 and 270 mN / 25 mm, and was the same value as in Comparative Example 1.
- a light emitting source that emits light of a plurality of wavelengths may be used.
- a second energy applying means for giving light energy of a wavelength different from the light energy of the LED 44, sound (sound wave), ultrasonic wave, magnetic force, electron beam, gamma ray, X-ray, and infrared energy as the second energy. Also good.
- the second energy is not limited to that described above, and any energy other than the light energy generated by the first energy applying means of the present invention may be applied.
- the timing for applying the second energy may be during the application of optical energy or may be after the application.
- the line light L diffused light may be irradiated.
- the light emitting means 4 and the speaker 62A may be moved with respect to the table 2, or both may be moved.
- the light energy one having a wavelength different from the above-described value such as infrared rays or visible light may be applied, or light having a different wavelength may be formed.
- a xenon flash, a metal halide lamp, a fluorescent lamp, or the like may be applied as the light source. And what kind of thing may be applied as a to-be-irradiated object, if it is a photoreaction type.
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Abstract
Description
すなわち、本発明のエネルギー付与装置は、光反応型の被照射体に光を照射して前記被照射体を光反応させるエネルギー付与装置であって、所定の波長の光エネルギーを前記被照射体に与える第1のエネルギー付与手段と、光エネルギー以外のエネルギーまたは前記所定の波長以外の光エネルギーを第2のエネルギーとして前記被照射体に与える第2のエネルギー付与手段と、を備えている、という構成を採用している。
また、本発明のエネルギー付与装置では、前記被照射体は、紫外線硬化型の接着剤層を有し半導体ウェハに貼付される接着シートである、ことが好ましい。
さらに、本発明のエネルギー付与装置では、前記第1のエネルギー付与手段は、少なくとも1個の発光ダイオードから発せられる光エネルギーを与える、ことが好ましい。
また、本発明のエネルギー付与装置では、前記第2のエネルギー付与手段は、熱、振動、音、超音波、電子線、ガンマ線、X線、赤外線のうちの少なくともいずれか1つのエネルギーを前記第2のエネルギーとして与える、ことが好ましい。
図1において、エネルギー付与装置1は、ウェハWの一面に貼付された被照射体としての接着シートSに光を照射する装置であり、マウント用シートMSを介してリングフレームRFと一体化されたウェハWを保持するテーブル2と、このテーブル2の下方に設けられた単軸ロボット3と、接着シートSに光を照射する第1のエネルギー付与手段としての発光手段4と、この発光手段4に電気を供給する第1の電力供給手段5と、接着シートSを加熱する第2のエネルギー付与手段としての加熱手段6と、この加熱手段6に電源を供給する第2の電力供給手段7と、単軸ロボット3と第1,第2の電力供給手段5,7とを制御する制御手段8とを備えている。
接着シートSは、紫外線硬化型(光反応型)の接着剤層を有する接着シートであって、その接着剤層は、365nm付近の光が照射された際に硬化(光反応)が開始するように設計されている。
テーブル2は、図示しない吸引口を備えており、マウント用シートMS側からウェハWおよびリングフレームRFを吸着保持可能に構成されている。単軸ロボット3は、そのスライダ31がテーブル2の下面に固定され、このスライダ31を介してテーブル2をX軸方向(図1の左右方向)にスライド移動させるように構成されている。
まず、図示しない搬送手段等によって、回路面(図1中上面)に接着シートSが貼付されるとともに、回路面の反対面側からマウント用シートMSを介してリングフレームRFと一体化されたウェハWを図1中実線で示す位置に停止したテーブル2上に載置する。載置後、図示しない吸引口によってマウント用シートMS側からウェハWおよびリングフレームRFを吸着保持する。
この吸着保持の確認後、制御手段8は、第1,第2の電力供給手段5,7に対して、それぞれ発光手段4と加熱手段6とに電気を供給するように指令信号を出力する。すると、発光手段4は、LED44が365nmの単波長の光(紫外線)を発光してライン光Lを形成する。また、加熱手段6は、コイル62が発熱を開始する。
そして、制御手段8が単軸ロボット3を制御し、テーブル2を矢印D方向へ移動させることで、テーブル2上面に載置された接着シートSがライン光Lを横切ることとなり、接着シートSの全面に波長が365nmの光エネルギー(紫外線エネルギー)が付与される(第1のエネルギー付与工程)。
その後もテーブル2の矢印D方向への移動が続行されることで、テーブル2上面に載置された接着シートSが加熱手段6の下方を通過することとなり、接着シートSの全面に熱エネルギーが付与される(第2のエネルギー付与工程)。
このように、接着シートSの接着剤層は、第1のエネルギーとしての光エネルギーと第2のエネルギーとしての熱エネルギーとが付与されて硬化されることとなる。
その後、リングフレームRFと一体化されたウェハWは、図示しない搬送装置等を介して、接着シート剥離装置等へ搬送されて、当該接着シートSが剥離された後、ダイシング工程等へ搬送されることとなる。
すなわち、エネルギー付与装置1は、接着シートSに対して光エネルギーを与えた後に熱エネルギーを与えるので、光エネルギーだけでは硬化レベルに達しない接着剤層であっても、別のエネルギーとして熱エネルギーを接着シートSに与えるため、エネルギー障壁を乗り越えて接着シートSの接着剤層を適切に硬化させることができる。
図3は、第2実施形態に係るエネルギー付与装置1Aを示す側面図である。
第2実施形態のエネルギー付与装置1Aと第1実施形態のエネルギー付与装置1との相違点は、第2のエネルギー付与手段として加熱手段6の代わりに、振動発生手段6Aを設けた点である。
振動発生手段6Aとしては、テーブル2の内部に設けられた振動体61Aや、テーブル2の上方に設けられたスピーカ62Aを例示できる。スピーカ62Aおよび振動体61Aは、第2の電力供給手段7から供給される電源によって音波や振動を発し、この音波や振動により、テーブル2上のウェハWに貼付された接着シートSに、第2のエネルギーとしての振動エネルギーが与られる。なお、振動体61Aとしては、公知の超音波振動装置や、電動モータやエアを利用した公知のバイブレータ等を採用することができる。
そして、第1実施形態と同様に、発光手段4で接着シートSの全面に第1のエネルギーとしての波長が365nmの光エネルギー(紫外線エネルギー)が付与された(第1のエネルギー付与工程)後に、振動発生手段6Aで接着シートSに第2のエネルギーとしての振動エネルギーが付与される(第2のエネルギー付与工程)ことで、エネルギー障壁を乗り越えて接着シートSの接着剤層を適切に硬化させることができる。
すなわち、エネルギー付与装置1Aは、接着シートSに対して光エネルギーを与えた後に振動エネルギーを与えるので、光エネルギーだけでは硬化レベルに達しない接着剤層であっても、別のエネルギーとして振動エネルギーを接着シートSに与えることで、エネルギー障壁を乗り越えて接着シートSの接着剤層を適切に硬化させることができる。
〔比較例1〕
比較例1では、ダイシングテープ(接着シート)の接着材層を365nmを含む複数波長の光で光硬化させた場合の粘着力を評価した。
まず、ステンレス板にリンテック株式会社製のダイシングテープ(型式:D-210、幅25mm)をリンテック株式会社製のシート貼付装置(型式:RAD-3510)で貼付した(ダイシングテープ貼付工程)。
次に、ステンレス板に貼付されたダイシングテープに、リンテック株式会社製の紫外線照射装置(型式:RAD-2000)にて365nmを含む複数波長の光を照射した(複数波長光照射工程)。
そして、株式会社エー・アンド・デイ社製の引張・圧縮試験機(型式:RTD-1225)によってステンレス板からダイシングテープを剥離して、剥離する際の粘着力を評価した(評価工程)。また、複数波長光照射工程での光量が異なるサンプルを作成して、同様の評価を行った。なお、粘着力の測定方法は、JIS Z 0237試験法(剥離速度:300mm/min、剥離角度:180度)を用いた。
図4に示すように、粘着力は、200~250mN/25mm間で推移した。
比較例2では、ダイシングテープの接着材層を365nmの単波長の光で光硬化させた場合の粘着力を評価した。
まず、比較例1と同様のダイシングテープ貼付工程によってステンレス板に貼付されたダイシングテープに、株式会社キーエンス社製のハイパワーUV-LED照射器(型式:UV-400)にて365nmの単波長の光を照射した(単波長光照射工程)。
そして、比較例1と同様の評価工程によって粘着力を評価した。また、単波長光照射工程での光量が異なるサンプルを作成して、同様の評価を行った。
図4に示すように、粘着力は300~350mN/25mm間で推移し、比較例1と比べて高い値となった。
実施例1では、ダイシングテープの接着材層を365nmの単波長の光と、熱とを用いて光硬化させた場合の粘着力を評価した。
まず、比較例2と同様のダイシングテープ貼付工程および単波長光照射工程によって、ステンレス板に貼付されたダイシングテープに365nmの単波長の光を照射した。
その後、株式会社竹綱製作所社製のスポットヒータ(型式:SH01/1100-035K)にてダイシングテープを加熱して(加熱工程)、比較例1,2と同様の評価工程によって粘着力を評価した。また、単波長光照射工程での光量が異なるサンプルを作成して、同様の評価を行った。
図4に示すように、粘着力は180~260mN/25mm間で推移し、比較例1と同等な値となった。
実施例2では、ダイシングテープの接着材層を365nmの単波長の光と、高周波とを用いて光硬化させた場合の粘着力を評価した。
まず、比較例2、実施例1と同様のダイシングテープ貼付工程および単波長光照射工程によって、ステンレス板に貼付されたダイシングテープに365nmの単波長の光を照射した。
その後、ダイシングテープが貼付されたステンレス板をハイデック株式会社製の高周波発生装置(型式:DIHS105-MT1)にて高周波を付与して、比較例1,2、実施例1と同様の評価工程によって粘着力を評価した。また、単波長光照射工程での光量が異なるサンプルを作成して、同様の評価を行った。
図4に示すように、粘着力は230~270mN/25mm間で推移し、比較例1と同等な値となった。
3…単軸ロボット(移動手段)
4…発光手段(第1のエネルギー付与手段)
6…加熱手段(第2のエネルギー付与手段)
6A…振動発生手段(第2のエネルギー付与手段)
S…接着シート(被照射体)
Claims (4)
- 光反応型の被照射体に光を照射して前記被照射体を光反応させるエネルギー付与装置であって、
所定の波長の光エネルギーを前記被照射体に与える第1のエネルギー付与手段と、
光エネルギー以外のエネルギーまたは前記所定の波長以外の光エネルギーを第2のエネルギーとして前記被照射体に与える第2のエネルギー付与手段と、を備えていることを特徴とするエネルギー付与装置。 - 前記被照射体は、紫外線により光反応が可能であり、
前記第1のエネルギー付与手段は、所定の波長の紫外線を与えることを特徴とする請求項1に記載のエネルギー付与装置。 - 前記第1のエネルギー付与手段は、少なくとも1個の発光ダイオードから発せられる光エネルギーを与えることを特徴とする請求項1または請求項2に記載のエネルギー付与装置。
- 光反応型の被照射体に光を照射して前記被照射体を光反応させるエネルギー付与方法であって、
所定の波長の光エネルギーを発生させる第1のエネルギー付与手段と、
光エネルギー以外のエネルギーまたは前記所定の波長以外の光エネルギーを第2のエネルギーとして発生させる第2のエネルギー付与手段と、を用い、
前記第1のエネルギー付与手段からの前記第1のエネルギーを前記被照射体に与える第1のエネルギー付与工程と、
前記第2のエネルギー付与手段からの前記第2のエネルギーを前記被照射体に与える第2のエネルギー付与工程と、を実施することを特徴とするエネルギー付与方法。
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JP2013141651A (ja) * | 2012-01-11 | 2013-07-22 | Lintec Corp | エネルギー線照射装置 |
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JP2000063773A (ja) * | 1998-08-21 | 2000-02-29 | Lintec Corp | 粘着シートおよびその使用方法 |
JP2001266419A (ja) * | 2000-03-17 | 2001-09-28 | Ricoh Co Ltd | 光ディスク製造方法及び光ディスク製造装置 |
JP2005538205A (ja) * | 2002-09-04 | 2005-12-15 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 2つの板状の形状の物体を接着するための方法及び装置 |
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