WO2010135949A1 - 单晶脆性材料粒子束辅助超精密加工方法 - Google Patents

单晶脆性材料粒子束辅助超精密加工方法 Download PDF

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WO2010135949A1
WO2010135949A1 PCT/CN2010/072522 CN2010072522W WO2010135949A1 WO 2010135949 A1 WO2010135949 A1 WO 2010135949A1 CN 2010072522 W CN2010072522 W CN 2010072522W WO 2010135949 A1 WO2010135949 A1 WO 2010135949A1
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processing
ultra
single crystal
precision
proton beam
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PCT/CN2010/072522
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English (en)
French (fr)
Inventor
房丰洲
陈耘辉
徐宗伟
仇中军
张效栋
代腾飞
胡小唐
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天津大学
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Priority to EP10774111.8A priority Critical patent/EP2298521A4/en
Priority to JP2012511130A priority patent/JP5616961B2/ja
Publication of WO2010135949A1 publication Critical patent/WO2010135949A1/zh
Priority to US13/159,811 priority patent/US8897910B2/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation

Definitions

  • the invention belongs to a new technology for ultra-precision cutting processing by surface modification, and particularly relates to an ultra-precision processing method of particle beam-assisted brittle materials.
  • Ultra-precision machining is a high-precision machining technology developed to meet the needs of national defense and the rapid development of the national economy.
  • Ultra-precision machining includes ultra-precision turning, ultra-precision grinding, and grinding and polishing.
  • single-crystal brittle materials such as single-crystal silicon
  • the surface to be processed is brittle, which seriously affects the quality and accuracy of the processing. Book
  • the object of the present invention is to provide an ultra-precision processing technology based on particle beam irradiation target surface modification auxiliary processing, which can significantly improve the processing precision and surface roughness of ultra-precision processing brittle materials. Significantly reduce tool wear.
  • the technical solution adopted by the present invention is as follows: The following steps are included:
  • a) Simulate the machining parameters according to depth of cut, surface roughness or other processing requirements using simulation software; b) bombard or irradiate the surface of the single-crystal brittle material to be processed with particle beam, and apply the energy and agent obtained by the simulation results.
  • Ultra-precision cutting technology performs ultra-precision machining on single crystal material after particle beam bombardment; d) Tests the surface quality of the processed material and compares the improvement of the surface quality.
  • the software used for the simulation is SRIM's software with simulation capabilities.
  • the particle beam is a proton beam or a He ⁇ ion beam.
  • the cutting depth is less than the depth of the particle beam bombardment or illumination.
  • the single crystal brittle material is single crystal silicon or single crystal germanium.
  • ultra-precision cutting technology refers to the use of single crystal diamond tools for cutting.
  • the present invention uses a dose of particle beam to bombard (irradiate) the surface to be processed for a certain period of time.
  • the structure of the surface to be processed changes, so that the plasticity of the surface of the material is improved, and the chipping during processing is effectively reduced.
  • the occurrence of phenomena thus improving the machining accuracy and surface roughness of the ultra-precision machining surface, reducing the tool grinding
  • This method is flexible and convenient, and can fundamentally reduce the influence of surface embrittlement on the surface roughness of ultra-precision machining of brittle materials, improve surface quality, and reduce tool wear.
  • this method is flexible and convenient.
  • the dose and time of particle beam bombardment (irradiation) can be appropriately selected according to the processing depth and the processing material.
  • Fig.1 Proton beam (H + ) bombardment of brittle material (irradiation) (a) Brittle material without proton beam bombardment (irradiation) (b) Brittle material after proton beam bombardment (irradiation) (c) Tool processing not performed A brittle material bombarded (irradiated) by a proton beam, causing a crack (d) a brittle material after proton beam bombardment (irradiation) processed by a tool, without cracking
  • Processing single crystal brittle materials such as single crystal silicon.
  • different processing parameters proton beam dose, applied voltage value, bombardment (irradiation) time
  • proton bombardment irradiation time
  • the sample is placed in a proton generator, and the surface to be processed is bombarded (irradiated) with a proton beam, and a certain proton dose and bombardment (irradiation) time are applied according to processing requirements (cut depth, etc.).
  • the single crystal structure of the surface to be processed changes, resulting in a transition from single crystal to polycrystalline or even amorphous, which improves the plastic properties of the surface of the material and effectively reduces the occurrence of brittle fracture during processing.
  • the purpose of improving the processing precision and surface roughness of the ultra-precision machined surface is achieving the purpose of improving the processing precision and surface roughness of the ultra-precision machined surface.
  • the present invention uses proton beam bombardment (irradiation) of workpiece surface assisted processing to obtain ultra-precision machining techniques for ultra-smooth surfaces, including the following steps:
  • the ultra-precision processing technique of bombarding (illuminating) the surface of the workpiece with a proton beam to obtain an ultra-smooth surface wherein the step (2) uses a proton beam, and the dose and processing time are controllable, and
  • the techniques are not limited to protons, but can also be achieved using other particles (eg, He ions, etc.).
  • the cutting depth is smaller than the proton beam bombardment (irradiation) depth.
  • the material to be processed is a single crystal brittle material, such as single crystal silicon, single crystal germanium or the like.
  • the single crystal brittle material of this embodiment is monocrystalline silicon.
  • the bombardment dose of the proton beam is 10 16 /cm 2
  • the applied voltage value is 2MeV
  • SRIM see http://www.srim. Org/.
  • the single crystal silicon Si material after the bombardment (irradiation) of the proton beam is cut by a single crystal diamond cutter with a cutting depth of 3 ⁇ m, a feed rate of 0.5 mm/min, and a cutting speed of 50 m/min.
  • the single crystal silicon can also be a single crystal germanium.
  • the surface roughness Ra of the single crystal Si subjected to ultra-precision machining was measured to be about 10 nm.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Milling Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Description

单晶脆性材料粒子束辅助超精密加工方法 技术领域
本发明属于利用表面改性进行超精密切削加工的新技术， 具体涉及粒子束辅助脆性材 料超精密加工方法。
背景技术
超精密加工是为了适应国防及国民经济快速发展的需求而发展起来的高精度加工技 说
术。 超精密加工包括超精密车削、 超精密磨削及研磨和抛光等。 对于单晶脆性材料 （如单 晶硅） 的超精密加工中， 由于材料的硬脆特点， 被加工表面呈脆裂状态， 严重影响加工质 量和精度。 书
如何减小或消除脆性材料加工过程中的脆裂现象， 提高超精密加工的加工精度和表面 粗糙度， 一直是超精密加工领域的研究焦点。
发明内容
为克服现有技术的不足， 本发明的目的在于： 提出一种基于粒子束照射靶材表面改性 辅助加工的超精密加工技术， 能显著提高超精密加工脆性材料的加工精度和表面粗糙度， 大幅度降低刀具的磨损。 本发明采用的技术方案是： 包括下列步骤：
a) 利用仿真软件按照切深、 表面粗糙度或其他加工要求对加工参数进行模拟； b) 使用粒子束轰击或照射待加工单晶脆性材料表面， 施以模拟结果所得的能量和剂 c) 利用超精密切削技术对粒子束轰击后的单晶材料进行超精密切削加工； d) 测试表征加工后的材料表面质量， 对比加工表面质量改善情况。
其中模拟使用的软件是 SRIM具有仿真功能的软件。
粒子束为质子束或 He氦离子束。
所述的切削加工深度小于粒子束轰击或照射的深度。
所述的单晶脆性材料是单晶硅或单晶锗。
利用超精密切削技术是指使用单晶金刚石刀具进行切削加工。
本发明可以带来以下效果：
首先， 本发明使用一定剂量粒子束轰击 （照射） 时间待加工表面一定时间， 在粒子束 的作用下， 表面待加工层的结构发生变化， 使材料表面的塑性性能提高， 有效减少加工中 脆裂现象的发生， 从而达到了提高超精密加工表面的加工精度和表面粗糙度、 降低刀具磨 损的目的。 这种方法灵活、 方便， 可以从加工机理上根本性减小超精密加工脆性材料时表 面脆裂对加工表面粗糙度的影响， 提高表面质量， 并减小刀具磨损。
其次，这种方法灵活、方便。可以根据加工深度和加工材料，适当选择粒子束轰击（照 射） 的剂量和时间。
附图说明
图 1 质子束 （H+) 对脆性材料轰击 （照射） （a) 未进行质子束轰击 （照射） 的脆性 材料（b)进行质子束轰击（照射）后的脆性材料（c)刀具加工未进行质子束轰击（照射） 的脆性材料， 产生裂纹 （d) 刀具加工进行质子束轰击 （照射） 后的脆性材料， 未产生裂 说
纹。
图 2 质子束轰击 （照射） 的 SRIM仿真， 使用质子轰击硅基底， 采用相同剂量的质 书
子。从仿真结果可以看出，质子束轰击（照射）程度、深度等是可控的。 （a)加速电压 200KeV
(b) 加速电压 50KeV。
具体实施方式
加工单晶脆性材料 （如单晶硅）。 首先， 依据理论研究及仿真分析对质子轰击不同加 工参数 （质子束的剂量、 施加电压值、 轰击 （照射） 时间） 进行研究， 获得最优化参数。 其次， 将样品置于质子发生器中， 使用质子束轰击（照射）待加工表面， 按照加工要求（切 深等）， 施以一定的质子剂量及轰击 （照射） 时间。 在质子束的作用下， 表面待加工层的 单晶结构发生变化，产生由单晶向多晶甚至非晶形态的转变，使材料表面的塑性性能提高， 有效减少加工中脆裂现象的发生， 从而达到了提高超精密加工表面的加工精度和表面粗糙 度的目的。
单晶脆性材料的单晶向多晶甚至非晶形态的转变， 降低了材料的脆性， 也降低了刀具 的磨损。
下面结合附图和实施例进一步说明本发明。 本发明使用质子束轰击（照射）工件表面辅助加工以获得超光滑表面的超精密加工技 术， 包括下列步骤：
( 1 ) 利用仿真软件按照加工要求 （切深等） 对加工参数进行模拟；
(2) 使用质子束轰击 （照射） 待加工单晶脆性材料表面， 施以模拟结果所得的剂
(3 ) 使用单晶金刚石刀具对质子束轰击（照射）后的单晶脆性材料进行切削加工；
(4) 测试加工表面质量等。 所述的使用质子束轰击（照射）工件表面辅助加工以获得超光滑表面的超精密加工技 术， 其中的步骤 （1 ) 中， 使用的软件是 SRIM或其他具有类似仿真功能的软件。
所述的使用质子束轰击（照射）工件表面辅助加工以获得超光滑表面的超精密加工技 术， 其中的步骤 （2) 说采用的是质子束， 其剂量和加工时间是可控的， 并且这种技术不 仅局限于质子， 也可以使用其他粒子 （例如 He离子等） 实现。
其中的步骤 （3 ) 中， 所述的切削加工深度小于质子束轰击 （照射） 深度。
所述的待加工材料为单晶脆性材料， 如单晶硅， 单晶锗等。
本实施例单晶脆性材料采用单晶硅。
说
( 1 ) 利用 SRIM仿真软件按照加工要求 （切深等） 对加工参数进行模拟， 模拟结果： 质子束的轰击剂量 1016/cm2、 施加电压值 2MeV， SRIM见 http://www.srim.org/。
(2)使用质子束轰击（照射）待加工表面，书施以模拟结果所得的剂量 1016/cm2及施加 电压值 2MeV
( 3 ) 使用单晶金刚石刀具对质子束轰击 （照射） 后的单晶硅 Si材料进行切削加工， 切削深度 3μηι， 进给速度 0.5mm/min， 切削速度 50m/min。 单晶硅也可为单晶锗。
(4) 测得经过超精密切削加工的单晶 Si表面粗糙度 Ra约为 10nm。
以上实施步骤仅为说明本发明的技术思想及特点， 使本技术能更容易理解并加以实 施， 但本发明的范围并不局限与上述的具体实施步骤， 即凡依照本发明所揭示的精神所做 的同等变化或修饰， 仍涵盖在本发明的保护范围。

Claims

权 利 要 求 书 、 一种粒子束辅助单晶脆性材料超精密加工方法， 其特征是， 包括下列步骤：
a) 利用仿真软件按照切深、 表面粗糙度或其他加工要求对加工参数进行模拟； b) 使用粒子束轰击或照射待加工单晶脆性材料表面， 施以模拟结果所得的能量和剂 c) 利用超精密切削技术对粒子束轰击后的单晶材料进行超精密切削加工；
d) 测试表征加工后的材料表面质量， 对比加工表面质量改善情况。
、 根据权利要求 1 所述的一种质子束辅助脆性材料超精密加工方法， 其特征是， 其中模 拟使用的软件是 SRIM具有仿真功能的软件。
、 根据权利要求 1 所述的一种质子束辅助脆性材料超精密加工方法， 其特征是， 粒子束 为质子束或 He氦离子束。
、 根据权利要求 1 所述的一种质子束辅助脆性材料超精密加工方法， 其特征是， 所述的 切削加工深度小于粒子束轰击或照射的深度。
、 根据权利要求 1 所述的一种质子束辅助脆性材料超精密加工方法， 其特征是， 所述的 单晶脆性材料是单晶硅或单晶锗。
PCT/CN2010/072522 2009-05-25 2010-05-07 单晶脆性材料粒子束辅助超精密加工方法 WO2010135949A1 (zh)

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EP10774111.8A EP2298521A4 (en) 2009-05-25 2010-05-07 Proton beam assisted ultraprecise processing method for processing single-crystal fragile material
JP2012511130A JP5616961B2 (ja) 2009-05-25 2010-05-07 イオンビームアシストによる単結晶脆性材料の超精密加工方法
US13/159,811 US8897910B2 (en) 2009-05-25 2011-06-14 Particle beam-assisted ultra-precision machining method for single-crystal brittle materials

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