WO2010125909A1 - クリーニングシート、クリーニング機能付搬送部材、基板処理装置のクリーニング方法、および基板処理装置 - Google Patents
クリーニングシート、クリーニング機能付搬送部材、基板処理装置のクリーニング方法、および基板処理装置 Download PDFInfo
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- WO2010125909A1 WO2010125909A1 PCT/JP2010/056587 JP2010056587W WO2010125909A1 WO 2010125909 A1 WO2010125909 A1 WO 2010125909A1 JP 2010056587 W JP2010056587 W JP 2010056587W WO 2010125909 A1 WO2010125909 A1 WO 2010125909A1
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- 239000005061 synthetic rubber Substances 0.000 description 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M trans-cinnamate Chemical compound [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/14—Wipes; Absorbent members, e.g. swabs or sponges
- B08B1/143—Wipes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0028—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by adhesive surfaces
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Definitions
- the present invention relates to a cleaning sheet and a conveying member with a cleaning function. More specifically, the present invention relates to a cleaning sheet and a transport member with a cleaning function that are excellent in foreign matter removal performance and transport performance, and that can remove foreign matters having a predetermined particle diameter particularly efficiently.
- the present invention also relates to a cleaning method for a substrate processing apparatus using such a cleaning sheet and a conveying member with a cleaning function, and a substrate processing apparatus that has been cleaned using such a cleaning method.
- each of the transport systems and the substrate are transported in physical contact. At that time, if foreign matter adheres to the substrate or the transport system, subsequent substrates are contaminated one after another, and it is necessary to periodically stop the apparatus and perform a cleaning process. As a result, there has been a problem that the operating rate of the processing apparatus is reduced and a great amount of labor is required for the cleaning process of the apparatus.
- Patent Document 1 a method of removing foreign substances adhering to the back surface of the substrate by conveying a plate-like member has been proposed (see Patent Document 1). According to such a method, since it is not necessary to stop the substrate processing apparatus and perform the cleaning process, the problem that the operating rate of the processing apparatus is reduced is solved. However, this method cannot sufficiently remove foreign matter.
- Patent Document 2 there has been proposed a method (see Patent Document 2) for cleaning and removing foreign substances adhering to the processing apparatus by transporting the substrate to which the adhesive substance is fixed as a cleaning member into the substrate processing apparatus.
- this method is also excellent in removing foreign matters. Therefore, a problem that the operating rate of the processing apparatus is reduced and a great amount of labor is required for the cleaning process of the apparatus. Both of these problems are solved.
- the contact portion between the adhesive substance and the apparatus may be strongly bonded and not separated. As a result, there may be a problem that the substrate cannot be reliably transported or a problem that the transport device is damaged.
- the wiring interval (design rule) of semiconductor elements is mainly 65 nm, and if foreign matter having a size equal to or larger than the wiring interval adheres, defects such as disconnection are likely to occur.
- foreign matter having a particle size of about 0.2 to 2.0 ⁇ m is a problem.
- any of the conventional techniques is insufficient to remove foreign substances having a predetermined particle diameter particularly efficiently.
- the cleaning sheet of the present invention is A cleaning sheet comprising a cleaning layer having substantially no adhesive force,
- the cleaning layer has an uneven portion having an average surface roughness Ra of 0.10 ⁇ m or more,
- the cleaning layer has a 180 ° peeling adhesive strength of less than 0.20 N / 10 mm as defined in JIS-Z-0237 with respect to the mirror surface of the silicon wafer.
- the cleaning sheet of the present invention includes an adhesive layer on one side of the cleaning layer.
- the cleaning sheet of the present invention comprises a support on one side of the cleaning layer.
- an adhesive layer is provided on the surface of the support opposite to the surface provided with the cleaning layer.
- a conveying member with a cleaning function in another embodiment, includes a transport member and the cleaning layer of the present invention provided on at least one surface of the transport member.
- the cleaning layer is directly attached to the transport member.
- the cleaning layer is attached to the carrying member via an adhesive layer.
- a method for cleaning a substrate processing apparatus is provided.
- the substrate processing apparatus cleaning method of the present invention transports the cleaning sheet of the present invention or the transport member with a cleaning function of the present invention into the substrate processing apparatus.
- a substrate processing apparatus is provided.
- the substrate processing apparatus of the present invention has been cleaned using the cleaning method of the present invention.
- the present invention it is possible to provide a cleaning sheet and a transport member with a cleaning function that are excellent in foreign matter removal performance and transport performance, and that can particularly efficiently remove foreign matter having a predetermined particle diameter. Further, according to the present invention, it is possible to provide a cleaning method for a substrate processing apparatus using such a cleaning sheet and a conveying member with a cleaning function. Moreover, according to this invention, the substrate processing apparatus with which cleaning was performed using such a cleaning method can be provided.
- Such an effect is achieved by employing a cleaning sheet having a cleaning layer having substantially no adhesive force as the cleaning sheet, designing an average surface roughness Ra of at least a part of the cleaning layer to be a predetermined value or more, and The cleaning layer is sufficiently developed by designing the peeling adhesive strength of the silicon wafer to the mirror surface to be less than a predetermined value.
- FIG. 1 is a schematic cross-sectional view of a cleaning sheet according to a preferred embodiment of the present invention.
- the cleaning sheet 100 includes a cleaning layer 10, an adhesive layer 20, and a protective film 30.
- the pressure-sensitive adhesive layer 20 and / or the protective film 30 may be omitted depending on the purpose. That is, the cleaning sheet may be composed of the cleaning layer alone.
- FIG. 2 is a schematic cross-sectional view of a cleaning sheet according to another preferred embodiment of the present invention.
- the cleaning sheet 100 includes a cleaning layer 10, an adhesive layer 20, a protective film 30, and a support 40.
- the pressure-sensitive adhesive layer 20 and / or the protective film 30 may be omitted depending on the purpose.
- the cleaning layer has substantially no adhesive force. That is, for example, a cleaning layer formed from an adhesive substance or a cleaning layer formed by adhering an adhesive tape is excluded from the cleaning layer in the present invention.
- the cleaning sheet of the present invention includes a cleaning layer having an adhesive force, the contact portion between the cleaning layer and the apparatus may be too strongly adhered and not separated. As a result, there may be a problem that the substrate cannot be reliably transported or a problem that the transport device is damaged.
- the cleaning layer in the present invention has an uneven portion having an average surface roughness Ra of 0.10 ⁇ m or more. Since the cleaning layer has such a specific surface shape, foreign substances having a predetermined particle diameter (typically 0.2 to 2.0 ⁇ m) are removed very efficiently, and the substrate is reliably conveyed. can do.
- the average surface roughness Ra of the uneven portion of the cleaning layer in the present invention is preferably 0.10 to 1.0 ⁇ m, more preferably 0.10 to 0.80 ⁇ m, still more preferably 0.15 to 0.60 ⁇ m. Particularly preferred is 0.20 to 0.60 ⁇ m.
- the average surface roughness Ra can be measured using a stylus type surface roughness measuring device (Veeco, Decak8).
- the measurement speed is 1 ⁇ m / second, the measurement range is 2.0 mm, and the diamond stylus (the curvature of the tip is 2 ⁇ m) may be moved.
- any appropriate shape can be adopted as the uneven shape of the uneven portion.
- the concavo-convex shape include a groove shape, a stripe shape, a protrusion shape, a dimple shape, and a rough surface shape such as a sandpaper surface.
- the tensile elastic modulus of the cleaning layer in the present invention is preferably 2000 MPa or less, more preferably 0.5 to 2000 MPa, still more preferably 1 to 1000 MPa in the operating temperature range of the cleaning layer.
- the tensile modulus is measured according to JIS K7127.
- the cleaning layer in the present invention has substantially no adhesive force.
- the 180 ° peeling adhesive strength defined in JIS-Z-0237 with respect to the mirror surface of the silicon wafer is less than 0.20 N / 10 mm, preferably 0.01 to 0.10 N / 10 mm. .
- the cleaning layer has substantially no adhesive force, and the contact portion between the cleaning layer and the apparatus is too strongly adhered and cannot be separated, and as a result, the substrate can be reliably conveyed. It is possible to avoid the problem of being unable to do so, the problem of damaging the transport device, and the problem of being inferior in dust removal.
- the thickness of the cleaning layer in the present invention is preferably 0.1 to 100 ⁇ m, more preferably 0.5 to 50 ⁇ m, still more preferably 1 to 50 ⁇ m. If it is such a range, the cleaning layer excellent in the balance of the removal performance of a foreign material and conveyance performance is obtained.
- any appropriate material can be adopted depending on the purpose and the method of forming the unevenness.
- the material constituting the cleaning layer include a heat resistant resin and an energy ray curable resin.
- a heat resistant resin is preferable.
- heat-resistant resin for example, it can be used for equipment used at high temperatures such as ozone asher, PVD equipment, oxidation diffusion furnace, atmospheric pressure CVD equipment, low pressure CVD equipment, plasma CVD equipment, etc. It can be used without causing poor transport and contamination within the device.
- the material constituting the cleaning layer may be used as it is to form the cleaning layer, or may be dissolved in any appropriate solvent to form the cleaning layer.
- the heat-resistant resin a resin that does not contain a substance that contaminates the substrate processing apparatus is preferable.
- An example of such a resin is a heat resistant resin used in a semiconductor manufacturing apparatus. Specific examples include polyimide and fluororesin. Polyimide is preferred.
- the polyimide can be obtained by imidizing polyamic acid.
- the polyamic acid can be obtained by reacting a tetracarboxylic dianhydride component and a diamine component in a substantially equimolar ratio in any appropriate organic solvent.
- tetracarboxylic dianhydride component examples include 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 2,2 ′, 3,3′-biphenyltetracarboxylic dianhydride, 3 , 3 ′, 4,4′-benzophenone tetracarboxylic dianhydride, 2,2 ′, 3,3′-benzophenone tetracarboxylic dianhydride, 4,4′-oxydiphthalic dianhydride, 2,2- Bis (2,3-dicarboxyphenyl) hexafluoropropane dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA), bis (2,3-dicarboxyphenyl) ) Methane dianhydride, bis (3,4-dicarboxyphenyl) methane dianhydride, bis (2,3-dicarboxypheny
- the diamine component examples include a diamine compound having at least two terminals having an amine structure and a polyether structure (hereinafter sometimes referred to as a PE diamine compound), an aliphatic diamine, and an aromatic diamine. .
- the PE diamine compound is preferable in that it can obtain a low elastic modulus polyimide resin having high heat resistance and low stress.
- any suitable compound can be adopted as long as it is a compound having a polyether structure and having at least two terminals having an amine structure.
- Examples thereof include a terminal diamine having a polypropylene glycol structure, a terminal diamine having a polyethylene glycol structure, a terminal diamine having a polytetramethylene glycol structure, and a terminal diamine having a plurality of these structures.
- a PE diamine compound having at least two terminals having an amine structure prepared from ethylene oxide, propylene oxide, polytetramethylene glycol, polyamine, or a mixture thereof is preferable.
- Examples of the aliphatic diamine include ethylenediamine, hexamethylenediamine, 1,8-, 1,10-diaminodecane, 1,12-diaminododecane, 4,9-dioxa-1,12-diaminododecane, 1,3- Examples thereof include bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane ( ⁇ , ⁇ -bisaminopropyltetramethyldisiloxane).
- the molecular weight of the aliphatic diamine is usually preferably 50 to 1000000, more preferably 100 to 30000.
- aromatic diamine examples include 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 3,3′-diaminodiphenyl ether, m-phenylenediamine, p-phenylenediamine, and 4,4′-diaminodiphenylpropane.
- Examples of the organic solvent used in the reaction of the tetracarboxylic dianhydride and diamine include N, N-dimethylacetamide, N-methyl-2-pyrrolidone, and N, N-dimethylformamide.
- a nonpolar solvent for example, toluene or xylene may be used in combination.
- the reaction temperature between the tetracarboxylic dianhydride and the diamine is preferably 40 ° C. or higher, more preferably 50 to 150 ° C. With such a reaction temperature, gelation can be prevented. As a result, the gel content does not remain in the reaction system, so that clogging or the like during filtration is prevented, and removal of foreign substances from the reaction system is facilitated. Further, at such a reaction temperature, a uniform reaction can be realized, and thus variations in characteristics of the obtained resin can be prevented.
- the imidation of the polyamic acid is typically performed by heat treatment under an inert atmosphere (typically a vacuum or nitrogen atmosphere).
- the heat treatment temperature is preferably 150 ° C. or higher, more preferably 180 to 450 ° C. If it is such temperature, the volatile component in resin can be removed substantially completely. Moreover, oxidation and deterioration of the resin can be prevented by processing in an inert atmosphere.
- the energy ray curable resin is typically a composition containing an adhesive substance, an energy ray curable substance, and an energy ray curing initiator.
- the adhesive substance that can be contained in the energy beam curable resin any appropriate adhesive substance is adopted depending on the purpose.
- the weight average molecular weight of the adhesive substance is preferably 500 to 1,000,000, more preferably 600 to 900,000.
- the pressure-sensitive adhesive material may be a mixture of appropriate additives such as a crosslinking agent, a tackifier, a plasticizer, a sizing agent, and an anti-aging agent.
- a pressure-sensitive adhesive polymer is used as an adhesive substance that can be included in the energy beam curable resin.
- the pressure-sensitive adhesive polymer is suitably used when a nozzle method (described later) is used for forming irregularities on the cleaning layer.
- a typical example of the pressure-sensitive adhesive polymer is an acrylic polymer having an acrylic monomer such as (meth) acrylic acid and / or (meth) acrylic acid ester as a main monomer.
- Acrylic polymers can be used alone or in combination.
- an unsaturated double bond may be introduced into the molecule of the acrylic polymer to impart energy ray curability to the acrylic polymer itself.
- Examples of the method for introducing an unsaturated double bond include a method of copolymerizing an acrylic monomer and a compound having two or more unsaturated double bonds in the molecule, an acrylic polymer and an unsaturated double bond in the molecule. The method of making the functional groups of the compound which has two or more bonds react is mentioned.
- the adhesive material that can be included in the energy beam curable resin includes rubber-based, acrylic-based, vinyl alkyl ether-based, silicone-based, polyester-based, polyamide-based, urethane-based, and styrene-diene block co-polymers.
- a pressure-sensitive adhesive having improved creep characteristics by blending a polymer system, a heat-melting resin having a melting point of about 200 ° C. or less for example, JP-A-56-61468, JP-A-61-174857, JP-A-63) No. 17981, Japanese Patent Laid-Open No. 56-13040) and the like are used. These may be used alone or in combination.
- the pressure-sensitive adhesive is preferably a rubber-based pressure-sensitive adhesive based on natural rubber or various synthetic rubbers; or methyl group, ethyl group, propyl group, butyl group, amyl group or hexyl group.
- Alkyl having 20 or less carbon atoms such as heptyl group, 2-ethylhexyl group, isooctyl group, isodecyl group, dodecyl group, lauryl group, tridecyl group, pentadecyl group, hexadecyl group, heptadecyl group, octadecyl group, nonadecyl group, and eicosyl group.
- An acrylic pressure-sensitive adhesive comprising a base copolymer of an acrylic copolymer using one or more acrylic acid alkyl esters composed of an ester such as acrylic acid or methacrylic acid having a group.
- any appropriate acrylic copolymer is used depending on the purpose.
- the acrylic copolymer may have cohesive force, heat resistance, crosslinkability, and the like as necessary.
- carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itotanic acid, maleic acid, fumaric acid, and crotonic acid; acid anhydride monomers such as maleic anhydride and itonic anhydride; ) Hydroxyethyl acrylate, hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, hydroxyhexyl (meth) acrylate, hydroxyoctyl (meth) acrylate, (meth) acrylic Hydroxyl group-containing monomers such as hydroxydecyl acid, hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohe
- the energy ray-curable material is an arbitrary material that can function as a crosslinking point (branch point) when reacting with the adhesive material by energy rays (preferably light, more preferably ultraviolet rays) to form a three-dimensional network structure. Any suitable material may be employed.
- a typical example of the energy ray-curable substance is a compound having one or more unsaturated double bonds in the molecule (hereinafter referred to as a polymerizable unsaturated compound).
- the polymerizable unsaturated compound is non-volatile and has a weight average molecular weight of 10,000 or less, more preferably 5,000 or less. If it is such molecular weight, the said adhesive substance can form a three-dimensional network structure efficiently.
- energy ray curable materials include phenoxypolyethylene glycol (meth) acrylate, ⁇ -caprolactone (meth) acrylate, polyethylene glycol di (meth) acrylate, polypropylene glycol di (meta) ) Acrylates, trimethylolpropane tri (meth) acrylate, dipentaerythritol ruhexa (meth) acrylate, urethane (meth) acrylate, epoxy (meth) acrylate, oligoester (meth) acrylate Examples thereof include tetramethylolmethane tetra (meth) acrylate, pentaerythritol monohydroxypentaacrylate, 1,4-butylene glycol diacrylate, 1,6-hexanediol diacrylate, and polyethylene glycol diacrylate. These may be used alone or in combination.
- the energy ray curable substance is preferably used at a ratio of 0.1 to 50 parts by weight with respect
- an energy ray curable resin may be used as the energy ray curable substance.
- the energy ray curable resin include ester (meth) acrylate, urethane (meth) acrylate, epoxy (meth) acrylate, melamine (meth) acrylate, acrylic resin (meth) having a (meth) acryloyl group at the molecular terminal.
- Photosensitive reactive group-containing polymers such as acrylates, thiol-ene addition type resins having an allyl group at the molecular end, photocationic polymerization type resins, cinnamoyl group-containing polymers such as polyvinyl cinnamate, diazotized amino novolak resins and acrylamide type polymers Or an oligomer etc. are mentioned.
- examples of the polymer that reacts with energy rays include epoxidized polybutadiene, unsaturated polyester, polyglycidyl methacrylate, polyacrylamide, and polyvinylsiloxane. These may be used alone or in combination.
- the weight average molecular weight of the energy ray curable resin is preferably from 500 to 1,000,000, more preferably from 600 to 900,000.
- any appropriate curing initiator may be employed as the energy ray curing initiator depending on the purpose.
- a thermal polymerization initiator is used, and when light is used as the energy beam, a photopolymerization initiator is used.
- the thermal polymerization initiator include benzoyl peroxide and azobisisobutyronitrile.
- the photopolymerization initiator include benzoin ethers such as benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether and 2,2-dimethoxy-1,2-diphenylethane-1-one; substituted benzoins such as anisole methyl ether Ether; Substituted acetophenone such as 2,2-diethoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 1-hydroxy-cyclohexyl phenylphenyl ketone; Ketal such as benzylmethyl ketal and acetophenone diethyl ketal; Chlorothioxanthone, dodecylthioxanthone Xanthones such as cythylthioxanthone; benzophenones such as benzophenone and Michler's ketone; substituted amides such as 2-methyl-2-hydroxypropiophenone Ferketol; aromatic
- the material constituting the cleaning layer in the present invention may further contain any appropriate additive depending on the purpose.
- the additive include a surfactant, a plasticizer, an antioxidant, a conductivity imparting material, an ultraviolet absorber, and a light stabilizer.
- the cleaning sheet of the present invention may include a support.
- the thickness of the support can be appropriately selected and is preferably 500 ⁇ m or less, more preferably 1 to 300 ⁇ m, and still more preferably 1 to 100 ⁇ m.
- the surface of the support is chemically treated with conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high-voltage impact exposure, ionizing radiation treatment, etc., in order to improve adhesion and retention with adjacent layers. Alternatively, a physical treatment or a coating treatment with a primer (for example, the above-mentioned adhesive substance) may be performed.
- the support may be a single layer or a multilayer body.
- any appropriate support is adopted as the support depending on the purpose.
- engineering plastic and super engineering plastic films can be mentioned.
- Specific examples of engineering plastics and super engineering plastics include polyimide, polyethylene, polyethylene terephthalate, acetyl cellulose, polycarbonate, polypropylene, and polyamide.
- Various physical properties such as molecular weight can be appropriately selected according to the purpose.
- the method for forming the support is appropriately selected according to the purpose.
- the cleaning sheet of the present invention may include an adhesive layer.
- Any appropriate material can be adopted as the material of the pressure-sensitive adhesive layer.
- what consists of normal adhesives, such as an acrylic type and a rubber type can be used.
- an acrylic adhesive mainly composed of an acrylic polymer having a weight average molecular weight of 100,000 or less and a component of 10% by weight or less is preferably used.
- the above acrylic polymer can be synthesized by polymerizing a monomer mixture containing (meth) acrylic acid alkyl ester as a main monomer and adding other copolymerizable monomers as necessary.
- the pressure-sensitive adhesive layer in the present invention has a 180 ° peeling adhesive force defined by JIS-Z-0237 with respect to the mirror surface of a silicon wafer, preferably 0.01 to 10 N / 10 mm, more preferably 0.05. ⁇ 5N / 10mm. If the adhesive strength is too high, the support film may be torn when the cleaning sheet is peeled off from the substrate or the like.
- the thickness of the pressure-sensitive adhesive layer in the present invention is preferably 1 to 100 ⁇ m, more preferably 5 to 50 ⁇ m.
- the cleaning sheet of the present invention may have a protective film in order to protect the cleaning layer and the support.
- the protective film is peeled off at an appropriate stage. Any appropriate film is adopted as the protective film depending on the purpose.
- polyolefin such as polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate, polybutylene terephthalate, polyurethane, ethylene vinyl acetate copolymer, ionomer resin, ethylene ) Acrylic acid copolymer, ethylene / (meth) acrylic acid ester copolymer, polystyrene, polycarbonate, plastic film, polyimide, and fluororesin film.
- the protective film may be subjected to a release treatment with a release agent or the like according to the purpose.
- the release agent include silicone, long chain alkyl, fluorine, fatty acid amide, and silica.
- the thickness of this protective film is preferably 1 to 100 ⁇ m.
- the formation method of a protective film is suitably selected according to the objective, For example, it can form by the injection molding method, the extrusion molding method, and the blow molding method.
- any suitable production method can be adopted as long as the cleaning sheet of the present invention is obtained.
- a preferable manufacturing method there is a method in which irregularities are formed by laser processing on at least a part of the surface of any appropriate substrate, and a cleaning layer is formed on the surface of the substrate. That is, by providing unevenness on the surface of the substrate and forming a cleaning layer on the surface, the average surface roughness Ra of the cleaning layer surface is controlled to a predetermined size.
- any appropriate base material can be adopted as the base material.
- Examples thereof include semiconductor wafers (for example, silicon wafers), flat panel display substrates such as LCDs and PDPs, compact disks, MR heads, and the like.
- the transport member with a cleaning function of the present invention includes a transport member and the cleaning layer of the present invention provided on at least one surface of the transport member.
- conveying member Any appropriate conveying member can be adopted as the conveying member.
- substrates such as semiconductor wafers (for example, silicon wafers), substrates for flat panel displays such as LCDs and PDPs, compact disks, and MR heads can be used.
- the cleaning layer may be directly attached to the transport member, or may be attached to the transport member via an adhesive layer.
- any appropriate pressure-sensitive adhesive layer can be adopted as the pressure-sensitive adhesive layer.
- the aforementioned A.I. The pressure-sensitive adhesive layer described in the item of the cleaning sheet can be employed.
- the cleaning method of the present invention is a cleaning method for a substrate processing apparatus, wherein the cleaning sheet of the present invention or the transport member with a cleaning function of the present invention is transported into the substrate processing apparatus and brought into contact with the portion to be cleaned. As a result, the foreign matter adhering to the site to be cleaned is easily and reliably removed by cleaning.
- the substrate processing apparatus cleaned by the above cleaning method is not particularly limited.
- Specific examples of the substrate processing apparatus include various apparatuses such as an exposure irradiation apparatus for circuit formation, a resist coating apparatus, a sputtering apparatus, an ion implantation apparatus, a dry etching apparatus, and a wafer prober in addition to the apparatus already described in this specification.
- substrate processing apparatuses used at high temperatures such as ozone asher, resist coater, oxidation diffusion furnace, atmospheric pressure CVD apparatus, reduced pressure CVD apparatus, plasma CVD apparatus, and the like.
- Substrate processing equipment has been cleaned using the cleaning method of the present invention.
- the substrate processing apparatus of the present invention is cleaned by transporting the cleaning sheet of the present invention or the transporting member with a cleaning function of the present invention into the substrate processing apparatus.
- a substrate processing apparatus in which foreign matters having a particle diameter of 2 to 2.0 ⁇ m are removed particularly efficiently can be obtained.
- the average surface roughness Ra was measured using a stylus type surface roughness measuring device (Veeco, Decak8). The measurement speed was 1 ⁇ m / second, the measurement range was 2.0 mm, and the measurement was performed by moving a diamond stylus (curvature at the tip was 2 ⁇ m).
- (4) Cleaning performance evaluation method Evaluation was performed by measuring the number of foreign matters of 0.200 ⁇ m or more on the silicon wafer mirror surface using a foreign matter inspection device (KFS Tencor, SFS6200) (hereinafter referred to as device A). More specifically, the cleaning member is conveyed to a liner film peeling apparatus (manufactured by Nitto Seiki, HR-300CW) (hereinafter referred to as apparatus B) for manufacturing a cleaning sheet, and the number of foreign matters before and after the cleaning member is conveyed is measured. Evaluated by things. The specific method is as follows. First, a new silicon wafer mirror surface was directed downward to the apparatus B so that the mirror surface automatically contacted the transfer arm or chuck table (face-down transfer).
- the number of foreign matters adhering to the mirror surface was measured by using the apparatus A (the number of foreign matters at this time is defined as “the number of foreign matters 1”).
- the cleaning member of the present invention was transported to the apparatus B and the cleaning process was performed.
- the new wafer was transported face down again, and the number of foreign substances adhered at that time was measured using the apparatus A (the number of foreign substances at this time was measured). “The number of foreign bodies is 2”).
- the foreign matter removal rate was calculated by the following equation as a parameter for the cleaning effect of the cleaning member.
- Foreign matter removal rate [100 ⁇ (number of foreign matter 2) / (number of foreign matter 1) ⁇ 100]%
- Example 1 Polyethylene glycol 200 dimethacrylate for 100 parts of acrylic polymer (weight average molecular weight 700,000) obtained from a monomer mixture consisting of 75 parts of 2-ethylhexyl acrylate, 20 parts of methyl acrylate, and 5 parts of acrylic acid.
- the internal temperature was set to 58 ° C., and the polymerization was carried out in this state for about 4 hours to obtain an adhesive polymer solution.
- 3 parts of a polyisocyanate compound manufactured by Nippon Polyurethane Industry, trade name: Coronate L
- Coronate L a polyisocyanate compound
- the pressure-sensitive adhesive solution B is applied to a release-treated surface of a separator made of a polypropylene film (thickness 30 ⁇ m, width 250 mm) on one side so that the thickness after drying becomes 7 ⁇ m, and a long polyester film is formed on the pressure-sensitive adhesive layer.
- the sheet (1) was irradiated with ultraviolet rays having a central wavelength of 365 nm at an integrated light quantity of 1000 mJ / cm 2 to obtain a cleaning sheet (1) having a cleaning layer cured by ultraviolet rays.
- the protective film A of the cleaning sheet (1) was peeled off, and the 180 ° peel adhesive strength (measured in accordance with JIS-Z-0237) with respect to the silicon wafer (mirror surface) was measured and found to be 0.05 N / 10 mm. .
- the tensile strength of the cleaning layer after UV curing was 460 MPa.
- the separator of this cleaning sheet (1) was peeled off and attached to the mirror surface of an 8-inch silicon wafer with a hand roller to produce a wafer (1) with a back surface protective material.
- the protective film A of the wafer with the back surface protective material (1) was peeled off to prepare a conveying member with a cleaning function (1).
- the average surface roughness Ra of the cleaning layer of the conveying member (1) with a cleaning function was 0.11 ⁇ m.
- the number of foreign matters of 0.200 ⁇ m or more on the mirror surface of a new 8-inch silicon wafer was measured with a laser type foreign matter measuring device. After the wafer was transferred to the apparatus A with the mirror surface facing down, the number of foreign particles of 0.200 ⁇ m or more was measured with a laser type foreign particle measuring apparatus.
- Example 2 In an atmosphere under a nitrogen stream, 14.8 g of polyetherdiamine (manufactured by Sun Techno Chemical Co., XTJ-510), 8.45 g of 4,4′-DPE (DDE) in 133 g of N, N-dimethylacetamide (DAMc), Then, 10.0 g of pyromellitic dianhydride (PMDA) was mixed at 70 ° C. and reacted to obtain a polyamic acid solution A. After cooling, the polyamic acid solution A was applied on the etched surface of an 8-inch silicon wafer with a spin coater and dried at 90 ° C. for 20 minutes to obtain a transport member (2) with polyamic acid.
- PMDA pyromellitic dianhydride
- the conveyance member (2) with a polyamic acid was heat-treated at 300 ° C. for 2 hours in a nitrogen atmosphere to form a polyimide film having a thickness of 30 ⁇ m, thereby obtaining a conveyance member (2) with a cleaning function.
- the average surface roughness Ra of the cleaning layer of the conveying member with a cleaning function (2) was 0.54 ⁇ m.
- the cleaning layer of the transfer member (2) with the cleaning function was peeled off from the silicon wafer, and the 180 ° peeling adhesive strength (measured according to JIS-Z-0237) to the silicon wafer (mirror surface) was measured. It was 03 N / 10 mm.
- the number of foreign matters of 0.200 ⁇ m or more on the mirror surface of a new 8-inch silicon wafer was measured with a laser type foreign matter measuring device, and five was found. After the wafer was transferred to the apparatus A with the mirror surface facing down, the number of foreign matters of 0.200 ⁇ m or more was measured with a laser type foreign matter measuring device.
- Example 3 A laser mark for ID recognition defined by the SEMI standard was formed on the entire mirror surface of an 8-inch silicon wafer to obtain a wafer (3) as shown in FIG.
- the polyamic acid solution A described in Example 2 was applied to the mirror surface of the wafer (3) with a spin coater, and dried at 120 ° C. for 10 minutes to obtain a transport member (3) with a polyamic acid.
- the conveyance member (3) with a polyamic acid was heat-treated at 300 ° C. for 2 hours in a nitrogen atmosphere to form a polyimide film having a thickness of 8 ⁇ m, thereby obtaining a conveyance member (3) with a cleaning function.
- the average surface roughness Ra of the cleaning layer of the conveying member with a cleaning function (3) was 0.34 ⁇ m.
- the cleaning layer of the transfer member (3) with the cleaning function was peeled off from the silicon wafer, and the 180 ° peeling adhesive strength (measured according to JIS-Z-0237) to the silicon wafer (mirror surface) was measured. It was 02 N / 10 mm.
- the number of foreign matters of 0.200 ⁇ m or more on the mirror surface of a new 8-inch silicon wafer was measured with a laser type foreign matter measuring apparatus, and there were two. After the wafer was transferred to the apparatus A with the mirror surface facing down, the number of foreign particles of 0.200 ⁇ m or more was measured with a laser type foreign particle measuring apparatus.
- Example 4 The pressure-sensitive adhesive solution A described in Example 1 was applied onto the etched surface of a 200 mm wafer with a spin coater and dried at 90 ° C. for 20 minutes to obtain a pressure-sensitive adhesive transport member (4).
- This transport member with adhesive (4) was irradiated with ultraviolet light having a central wavelength of 365 nm at an integrated light quantity of 1000 mJ / cm 2 in a nitrogen atmosphere (1000 ppm oxygen concentration) to obtain a transport member (4) with a cleaning function cured by ultraviolet light.
- the average surface roughness Ra of the cleaning layer of the conveying member with a cleaning function (4) was 0.42 ⁇ m.
- Example 5 A laser mark 3 mm ⁇ 3 mm for ID recognition defined by the SEMI standard was formed on the V-notch portion on the mirror surface of an 8-inch silicon wafer to obtain a wafer (5) as shown in FIG. Using the polyamic acid solution A described in Example 2, it was applied to the mirror surface of the wafer (5) with a spin coater and dried at 120 ° C. for 10 minutes to obtain a transport member (5) with a polyamic acid. The conveyance member (5) with a polyamic acid was heat-treated at 300 ° C. for 2 hours in a nitrogen atmosphere to form a polyimide film having a thickness of 8 ⁇ m, thereby obtaining a conveyance member (5) with a cleaning function.
- the average surface roughness Ra of the laser mark forming region shown in FIG. 4 of the cleaning layer of the conveying member with a cleaning function (5) was 0.38 ⁇ m.
- the average surface roughness Ra of the other region was 0.005 ⁇ m.
- the cleaning layer of the transfer member with cleaning function (5) was peeled off from the silicon wafer, and the 180 ° peeling adhesive strength (measured according to JIS-Z-0237) to the silicon wafer (mirror surface) was measured. It was 03 N / 10 mm.
- the number of foreign matters of 0.200 ⁇ m or more on the mirror surface of a new 8-inch silicon wafer was measured with a laser type foreign matter measuring apparatus, and there were two.
- the number of foreign matters of 0.200 ⁇ m or more was measured with a laser type foreign matter measuring device. .6293 in the range of 219-0.301 ⁇ m, 3900 in the range of 0.301-0.412 ⁇ m, 2987 in the range of 0.412-0.566 ⁇ m, 2976 in the range of 0.566-0.776 ⁇ m, 0.776 -1378 in the range of -1.06 ⁇ m, 584 in the range of 1.06-1.46 ⁇ m, 405 in the range of 1.46-1.60 ⁇ m, 828 in the range of 1.60 ⁇ m or more, 24753 in total (number of foreign matters 1 )Met.
- Example 1 In Example 1, instead of the protective film A, cleaning was performed in the same manner as in Example 1 except that the protective film was changed to a protective film (protective film B) made of a long-chain polyester film treated with a silicone release agent. A carrying member with function (C1) was obtained. The average surface roughness Ra of the protective film B was 0.009 ⁇ m. The average surface roughness Ra of the conveying member with a cleaning function (C1) was 0.012 ⁇ m. When the conveying member (C1) with the cleaning function was conveyed 10 times to the apparatus A, it stuck three times.
- Example 2 Using the polyamic acid solution A described in Example 2, it was applied to the mirror surface of an 8-inch silicon wafer with a spin coater and dried at 120 ° C. for 10 minutes to obtain a transport member (C2) with a polyamic acid.
- the conveyance member with polyamic acid (C2) was heat-treated at 300 ° C. for 2 hours under a nitrogen atmosphere to form a polyimide film having a thickness of 8 ⁇ m, thereby obtaining a conveyance member with a cleaning function (C2).
- the average surface roughness Ra of the conveying member with a cleaning function (C2) was 0.005 ⁇ m.
- the cleaning sheet and the conveyance member with a cleaning function of the present invention are suitably used for cleaning substrate processing apparatuses such as various manufacturing apparatuses and inspection apparatuses.
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Abstract
Description
実質的に粘着力を有さないクリーニング層を備えるクリーニングシートであって、
該クリーニング層は、平均表面粗さRaが0.10μm以上である凹凸形状部分を有し、
該クリーニング層は、シリコンウェハのミラー面に対する、JIS-Z-0237で規定される180°引き剥がし粘着力が0.20N/10mm未満である。
このような効果は、クリーニングシートとして、実質的に粘着力を有さないクリーニング層を備えるクリーニングシートを採用し、該クリーニング層の少なくとも一部分の平均表面粗さRaを所定値以上に設計し、かつ、該クリーニング層のシリコンウェハのミラー面に対する引き剥がし粘着力を所定値未満に設計することによって、十分に発現される。
20 粘着剤層
30 保護フィルム
40 支持体40
100 クリーニングシート
図1は、本発明の好ましい実施形態によるクリーニングシートの概略断面図である。このクリーニングシート100は、クリーニング層10と、粘着剤層20と、保護フィルム30とを有する。粘着剤層20および/または保護フィルム30は、目的に応じて省略してもよい。すなわち、クリーニングシートは、クリーニング層単独で構成されてもよい。図2は、本発明の別の好ましい実施形態によるクリーニングシートの概略断面図である。このクリーニングシート100は、クリーニング層10と、粘着剤層20と、保護フィルム30と、支持体40とを有する。粘着剤層20および/または保護フィルム30は、目的に応じて省略してもよい。
本発明のクリーニング機能付搬送部材は、搬送部材と、該搬送部材の少なくとも片面に設けられた本発明のクリーニング層とを備える。
本発明のクリーニング方法は、基板処理装置のクリーニング方法であって、本発明のクリーニングシート、または、本発明のクリーニング機能付搬送部材を基板処理装置内に搬送して、その被洗浄部位に接触させることにより、当該被洗浄部位に付着した異物を簡便かつ確実にクリーニング除去する。
本発明の基板処理装置は、本発明のクリーニング方法を用いてクリーニングが行われたものである。本発明の基板処理装置は、本発明のクリーニングシート、または、本発明のクリーニング機能付搬送部材を該基板処理装置内に搬送してクリーニングされたものであるので、所定の粒子径、特に、0.2~2.0μmの粒子径を有する異物が特に効率よく除去された基板処理装置となり得る。
平均表面粗さRaは、触針式表面粗さ測定装置(Veeco社製、Dectak8)を用いて測定した。測定スピードは1μm/秒、測定範囲は2.0mmで、ダイヤモンド製の触針(先端部の曲率は2μm)を動かして測定した。
JIS K7127に準じて測定した。具体的には、所定の基材上にクリーニング層を形成した後、当該クリーニング層を剥離し、動的粘弾性測定装置を用いて測定した。
シリコンウェハのミラー面にクリーニング層を形成し、JIS-Z-0237に準じて測定した。
異物検査装置(KLA Tencor製、SFS6200)(以下、装置Aとする)を用いて、シリコンウェハミラー面上の0.200μm以上の異物数を測定することにより評価した。より詳細には、クリーニング部材を、クリーニングシート製造用のライナーフィルム剥離装置(日東精機製、HR-300CW)(以下、装置Bとする)に搬送し、クリーニング部材の搬送前後の異物数を測定する事で評価した。具体的な方法は以下のとおりである。
装置Bへ、まず新品のシリコンウェハミラー面を下向きにしてミラー面が搬送アームやチャックテーブルに接触するように自動搬送した(フェイスダウン搬送)。そしてミラー面に付着した異物数を、装置Aを用いて測定した(この時の異物数を「異物数1」とする)。その後、装置Bに本発明のクリーニング部材を搬送してクリーニング処理を行った後、再度新品ウェハをフェイスダウン搬送し、その時付着した異物数を装置Aを用いて測定した(この時の異物数を「異物数2」とする)。クリーニング部材のクリーニング効果のパラメータとして異物除去率を以下の式により算出した。
異物除去率=[100-(異物数2)/(異物数1)×100]%
装置Bにてチャックテーブル上に搬送し、真空吸着を行い、真空を解除した後、リフトピンにてクリーニング部材をチャックテーブルから剥離できるかどうかで評価した。
アクリル酸-2-エチルヘキシル75部、アクリル酸メチル20部、およびアクリル酸5部からなるモノマー混合液から得たアクリルポリマー(重量平均分子量70万)100部に対して、ポリエチレングリコ―ル200ジメタクリレ―ト(新中村化学製、商品名:NKエステル4G)200部、ポリイソシアネート化合物(日本ポリウレタン工業製、商品名:コロネートL)3部、および光重合開始剤としてベンジルジメチルケタール(チバ・スペシャリティケミカルズ製、商品名:イルガキュアー651)3部を均一に混合して、紫外線硬化型の粘着剤溶液Aを調製した。
一方、温度計、攪拌機、窒素導入管、および還流冷却管を備えた、内容量が500mlの3つ口フラスコ型反応器内に、アクリル酸2-エチルへキシル73部、アクリル酸n-ブチル10部、N,N-ジメチルアクリルアミド15部、およびアクリル酸5部、重合開始剤として2,2´-アゾビスイソブチロニトリル0.15部、酢酸エチル100部を、全体が200gになるように配合して投入し、窒素ガスを約1時間導入しながら攪拌し、内部の空気を窒素で置換した。
その後、内部の温度を58℃にし、この状態で約4時間保持して重合を行い、粘着剤ポリマー溶液を得た。粘着剤ポリマー溶液100部にポリイソシアネート化合物(日本ポリウレタン工業製、商品名:コロネートL)3部を均一に混合し、粘着剤溶液Bを得た。
片面がポリプロピレンフィルム(厚さ30μm、幅250mm)からなるセパレータの剥離処理面に、上記粘着剤溶液Bを乾燥後の厚みが7μmとなるように塗布し、その粘着剤層上に長尺ポリエステルフィルム(厚さ25μm、幅250mm)を積層し、さらにそのフィルム上に紫外線硬化型の粘着剤溶液Aを乾燥後の厚みが15μmとなるように塗布して、クリーニング層としての粘着剤層を設けて、その表面に片面が非シリコーン剥離剤にて処理された長鎖ポリエステルフィルムからなる保護フィルム(保護フィルムA)の剥離処理面を貼合せて(厚さ25μm、幅250mm)シート(1)を得た。
この保護フィルムAの平均表面粗さRaは、0.12μmであった。
このシート(1)に、中心波長365nmの紫外線を積算光量1000mJ/cm2で照射して、紫外線硬化したクリーニング層を有するクリーニングシート(1)を得た。
このクリーニングシート(1)の保護フィルムAを剥がし、シリコンウェハ(ミラー面)に対する180°引き剥がし粘着力(JIS-Z-0237に準じて測定)を測定したところ、0.05N/10mmであった。このクリーニング層の紫外線硬化後の引張り強さは460MPaであった。
このクリーニングシート(1)のセパレータを剥がし、8インチシリコンウェハのミラー面にハンドローラーで貼り付け、裏面保護材付きウェハ(1)を作製した。
次に、裏面保護材付きウェハ(1)の保護フィルムAを剥離し、クリーニング機能付き搬送部材(1)を作成した。
クリーニング機能付き搬送部材(1)のクリーニング層の平均表面粗さRaは0.11μmであった。
レーザー式異物測定装置で新品の8インチのシリコンウェハのミラー面の0.200μm以上の異物を測定したところ4個であった。
このウェハを装置Aにミラー面を下側にして搬送した後、レーザー式異物測定装置で0.200μm以上の異物数を測定したところ、サイズ別に0.200-0.219μm範囲で5552個、0.219-0.301μm範囲で6891個、0.301-0.412μm範囲で4203個、0.412-0.566μm範囲で3221個、0.566-0.776μm範囲で3205個、0.776-1.06μm範囲で1532個、1.06-1.46μm範囲で698個、1.46-1.60μm範囲で492個、1.60μm以上の範囲で925個、全体で26719個(異物数1)であった。
クリーニング機能付き搬送部材(1)を、上記の26719個の異物が付着していた装置Aに10回搬送したところ、支障なく搬送できた。
その後に、新品の8インチのシリコンウェハのミラー面を下側に向けて搬送し、0.200μm以上の異物数を測定したところ、サイズ別に0.200-0.219μm範囲で2234個、0.219-0.301μm範囲で2758個、0.301-0.412μm範囲で1688個、0.412-0.566μm範囲で1308個、0.566-0.776μm範囲で1309個、0.776-1.06μm範囲で620個、1.06-1.46μm範囲で282個、1.46-1.60μm範囲で198個、1.60μm以上の範囲で371個、全体で10768個(異物数2)であった。
異物数1、異物数2から算出した異物除去率は、全体で60%であった。
結果を表1にまとめた。
窒素気流下の雰囲気において、133gのN,N-ジメチルアセトアミド(DAMc)中に、ポリエーテルジアミン(サンテクノケミカル製、XTJ-510)14.8g、4,4´-DPE(DDE)8.45g、およびピロメリット酸二無水物(PMDA)10.0gを70℃で混合し、反応させポリアミック酸溶液Aを得た。
冷却した後、ポリアミック酸溶液Aをスピンコーターで8インチのシリコンウェハのエッチング面上に塗布し、90℃で20分乾燥し、ポリアミック酸付き搬送部材(2)を得た。
ポリアミック酸付き搬送部材(2)を、窒素雰囲気下、300℃で2時間熱処理して、厚み30μmのポリイミド皮膜を形成し、クリーニング機能付き搬送部材(2)を得た。
クリーニング機能付き搬送部材(2)のクリーニング層の平均表面粗さRaは0.54μmであった。
このクリーニング機能付き搬送部材(2)のクリーニング層をシリコンウェハから剥離し、シリコンウェハ(ミラー面)に対する180°引き剥がし粘着力(JIS-Z-0237に準じて測定)を測定したところ、0.03N/10mmであった。
レーザー式異物測定装置で新品の8インチのシリコンウェハのミラー面の0.200μm以上の異物を測定したところ5個であった。
このウェハを装置Aにミラー面を下側にして搬送した後、レーザー式異物測定装置で0.200μm以上の異物数を測定したところ、サイズ別に0.200-0.219μm範囲で5551個、0.219-0.301μm範囲で6890個、0.301-0.412μm範囲で4202個、0.412-0.566μm範囲で3220個、0.566-0.776μm範囲で3204個、0.776-1.06μm範囲で1531個、1.06-1.46μm範囲で697個、1.46-1.60μm範囲で491個、1.60μm以上の範囲で924個、全体で26710個(異物数1)であった。
クリーニング機能付き搬送部材(2)を、上記の26710個の異物が付着していた装置Aに10回搬送したところ、支障なく搬送できた。
その後に、新品の8インチのシリコンウェハのミラー面を下側に向けて搬送し、0.200μm以上の異物数を測定したところ、サイズ別に0.200-0.219μm範囲で2187個、0.219-0.301μm範囲で2708個、0.301-0.412μm範囲で1677個、0.412-0.566μm範囲で1273個、0.566-0.776μm範囲で1256個、0.776-1.06μm範囲で602個、1.06-1.46μm範囲で274個、1.46-1.60μm範囲で194個、1.60μm以上の範囲で368個、全体で10539個(異物数2)であった。
異物数1、異物数2から算出した異物除去率は、全体で61%であった。
結果を表1にまとめた。
8インチのシリコンウェハのミラー面全面にSEMI規格で定められているID認識用のレーザーマークを全面に形成し、図3の様なウェハ(3)を得た。実施例2に記載のポリアミック酸溶液Aを用いて、スピンコーターでウェハ(3)のミラー面に塗布し、120℃で10分乾燥し、ポリアミック酸付き搬送部材(3)を得た。
ポリアミック酸付き搬送部材(3)を、窒素雰囲気下、300℃で2時間熱処理して、厚み8μmのポリイミド皮膜を形成し、クリーニング機能付き搬送部材(3)を得た。
クリーニング機能付き搬送部材(3)のクリーニング層の平均表面粗さRaは0.34μmであった。
このクリーニング機能付き搬送部材(3)のクリーニング層をシリコンウェハから剥離し、シリコンウェハ(ミラー面)に対する180°引き剥がし粘着力(JIS-Z-0237に準じて測定)を測定したところ、0.02N/10mmであった。
レーザー式異物測定装置で新品の8インチのシリコンウェハのミラー面の0.200μm以上の異物を測定したところ2個であった。
このウェハを装置Aにミラー面を下側にして搬送した後、レーザー式異物測定装置で0.200μm以上の異物数を測定したところ、サイズ別に0.200-0.219μm範囲で5548個、0.219-0.301μm範囲で6887個、0.301-0.412μm範囲で4199個、0.412-0.566μm範囲で3217個、0.566-0.776μm範囲で3201個、0.776-1.06μm範囲で1528個、1.06-1.46μm範囲で694個、1.46-1.60μm範囲で488個、1.60μm以上の範囲で921個、全体で26683個(異物数1)であった。
クリーニング機能付き搬送部材(3)を、上記の26683個の異物が付着していた装置Aに10回搬送したところ、支障なく搬送できた。
その後に、新品の8インチのシリコンウェハのミラー面を下側に向けて搬送し、0.200μm以上の異物数を測定したところ、サイズ別に0.200-0.219μm範囲で1755個、0.219-0.301μm範囲で2184個、0.301-0.412μm範囲で1309個、0.412-0.566μm範囲で1003個、0.566-0.776μm範囲で1020個、0.776-1.06μm範囲で477個、1.06-1.46μm範囲で218個、1.46-1.60μm範囲で155個、1.60μm以上の範囲で292個、全体で8413個(異物数2)であった。
異物数1、異物数2から算出した異物除去率は、全体で68%であった。
結果を表1にまとめた。
実施例1に記載の粘着剤溶液Aをスピンコーターで200mmウェハのエッチング面上に塗布し、90℃で20分乾燥し、粘着剤付き搬送部材(4)を得た。
この粘着剤付き搬送部材(4)を窒素雰囲気(1000ppm酸素濃度)中で中心波長365nmの紫外線を積算光量1000mJ/cm2で照射して、紫外線硬化したクリーニング機能付き搬送部材(4)を得た。
クリーニング機能付き搬送部材(4)のクリーニング層の平均表面粗さRaは0.42μmであった。
このクリーニング機能付き搬送部材(4)のクリーニング層をシリコンウェハから剥離し、シリコンウェハ(ミラー面)に対する180°引き剥がし粘着力(JIS-Z-0237に準じて測定)を測定したところ、0.03N/10mmであった。
レーザー式異物測定装置で新品の8インチのシリコンウェハのミラー面の0.200μm以上の異物を測定したところ5個であった。
このウェハを装置Aにミラー面を下側にして搬送した後、レーザー式異物測定装置で0.200μm以上の異物数を測定したところ、サイズ別に0.200-0.219μm範囲で5550個、0.219-0.301μm範囲で6889個、0.301-0.412μm範囲で4201個、0.412-0.566μm範囲で3219個、0.566-0.776μm範囲で3203個、0.776-1.06μm範囲で1530個、1.06-1.46μm範囲で696個、1.46-1.60μm範囲で490個、1.60μm以上の範囲で923個、全体で26701(異物数1)であった。
クリーニング機能付き搬送部材(4)を、上記の26701個の異物が付着していた装置Aに10回搬送したところ、支障なく搬送できた。
その後に、新品の8インチのシリコンウェハのミラー面を下側に向けて搬送し、0.200μm以上の異物数を測定したところ、サイズ別に0.200-0.219μm範囲で2550個、0.219-0.301μm範囲で3100個、0.301-0.412μm範囲で1889個、0.412-0.566μm範囲で1408個、0.566-0.776μm範囲で1373個、0.776-1.06μm範囲で619個、1.06-1.46μm範囲で273個、1.46-1.60μm範囲で190個、1.60μm以上の範囲で345個、全体で11747個(異物数2)であった。
異物数1、異物数2から算出した異物除去率は、全体で56%であった。
結果を表1にまとめた。
8インチのシリコンウェハのミラー面にSEMI規格で定められているID認識用のレーザーマーク3mm×3mmをVノッチ部分に形成し、図4の様なウェハ(5)を得た。実施例2に記載のポリアミック酸溶液Aを用いて、スピンコーターでウェハ(5)のミラー面に塗布し、120℃で10分乾燥し、ポリアミック酸付き搬送部材(5)を得た。
ポリアミック酸付き搬送部材(5)を、窒素雰囲気下、300℃で2時間熱処理して、厚み8μmのポリイミド皮膜を形成し、クリーニング機能付き搬送部材(5)を得た。
クリーニング機能付き搬送部材(5)のクリーニング層の図4記載のレーザーマーク形成領域の平均表面粗さRaは0.38μmであった。それ以外の領域の平均表面粗さRaは0.005μmであった。
このクリーニング機能付き搬送部材(5)のクリーニング層をシリコンウェハから剥離し、シリコンウェハ(ミラー面)に対する180°引き剥がし粘着力(JIS-Z-0237に準じて測定)を測定したところ、0.03N/10mmであった。
レーザー式異物測定装置で新品の8インチのシリコンウェハのミラー面の0.200μm以上の異物を測定したところ2個であった。
このウェハを装置Aにミラー面を下側にして搬送した後、レーザー式異物測定装置で0.200μm以上の異物数を測定したところ、サイズ別に0.200-0.219μm範囲で5199個、0.219-0.301μm範囲で6493個、0.301-0.412μm範囲で3900個、0.412-0.566μm範囲で2987個、0.566-0.776μm範囲で2976個、0.776-1.06μm範囲で1378個、1.06-1.46μm範囲で584個、1.46-1.60μm範囲で405個、1.60μm以上の範囲で828個、全体で24753(異物数1)であった。
クリーニング機能付き搬送部材(5)を、上記の24753個の異物が付着していた装置Aに10回搬送したところ、支障なく搬送できた。
その後に、新品の8インチのシリコンウェハのミラー面を下側に向けて搬送し、0.200μm以上の異物数を測定したところ、サイズ別に0.200-0.219μm範囲で1136個、0.219-0.301μm範囲で1487個、0.301-0.412μm範囲で933個、0.412-0.566μm範囲で712個、0.566-0.776μm範囲で768個、0.776-1.06μm範囲で372個、1.06-1.46μm範囲で156個、1.46-1.60μm範囲で114個、1.60μm以上の範囲で243個、全体で5921個(異物数2)であった。
異物数1、異物数2から算出した異物除去率は、全体で76%であった。
結果を表1にまとめた。
実施例1において、保護フィルムAの代わりに、片面がシリコーン剥離剤にて処理された長鎖ポリエステルフィルムからなる保護フィルム(保護フィルムB)に変更した以外は、実施例1と同様にして、クリーニング機能付き搬送部材(C1)を得た。
この保護フィルムBの平均表面粗さRaは、0.009μmであった。
クリーニング機能付き搬送部材(C1)の平均表面粗さRaは、0.012μmであった。
クリーニング機能付き搬送部材(C1)を、装置Aに10回搬送したところ、3回張り付いてしまった。
実施例2に記載のポリアミック酸溶液Aを用いて、スピンコーターで8インチのシリコンウェハのミラー面に塗布し、120℃で10分乾燥し、ポリアミック酸付き搬送部材(C2)を得た。
ポリアミック酸付き搬送部材(C2)を、窒素雰囲気下、300℃で2時間熱処理して、厚み8μmのポリイミド皮膜を形成し、クリーニング機能付き搬送部材(C2)を得た。
クリーニング機能付き搬送部材(C2)の平均表面粗さRaは、0.005μmであった。
クリーニング機能付き搬送部材(C2)を、装置Aに100回搬送したところ、5回張り付いてしまった。
Claims (9)
- 実質的に粘着力を有さないクリーニング層を備えるクリーニングシートであって、
該クリーニング層は、平均表面粗さRaが0.10μm以上である凹凸形状部分を有し、
該クリーニング層は、シリコンウェハのミラー面に対する、JIS-Z-0237で規定される180°引き剥がし粘着力が0.20N/10mm未満である、
クリーニングシート。 - 前記クリーニング層の片面に粘着剤層を備える、請求項1に記載のクリーニングシート。
- 前記クリーニング層の片面に支持体を備える、請求項1に記載のクリーニングシート。
- 前記支持体の前記クリーニング層が備えられた面と反対の面に粘着剤層を備える、請求項3に記載のクリーニングシート。
- 搬送部材と、該搬送部材の少なくとも片面に設けられた請求項1に記載のクリーニング層とを備える、クリーニング機能付搬送部材。
- 前記クリーニング層が前記搬送部材に直接貼り付けられている、請求項5に記載のクリーニング機能付搬送部材。
- 前記クリーニング層が粘着剤層を介して前記搬送部材に貼り付けられている、請求項5に記載のクリーニング機能付搬送部材。
- 請求項1から4までのいずれかに記載のクリーニングシート、または、請求項5から7までのいずれかに記載のクリーニング機能付搬送部材を基板処理装置内に搬送する、基板処理装置のクリーニング方法。
- 請求項8に記載のクリーニング方法を用いてクリーニングが行われた基板処理装置。
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KR101583167B1 (ko) * | 2011-09-05 | 2016-01-07 | 가부시끼가이샤 도시바 | 레티클 척 클리너 및 레티클 척 클리닝 방법 |
JP6148850B2 (ja) * | 2012-12-05 | 2017-06-14 | 日本特殊陶業株式会社 | クリーニング用素材およびクリーニング方法 |
JP6100539B2 (ja) * | 2013-01-25 | 2017-03-22 | 株式会社ニトムズ | 有機質汚れ除去用粘着クリーナー |
JP6110814B2 (ja) * | 2013-06-04 | 2017-04-05 | 富士フイルム株式会社 | エッチング液およびそのキット、これらを用いたエッチング方法、半導体基板製品の製造方法および半導体素子の製造方法 |
KR102140999B1 (ko) | 2013-06-25 | 2020-08-04 | 가부시키가이샤 니토무즈 | 유기질 오염 제거용 점착 클리너 |
JP6814528B2 (ja) * | 2015-02-27 | 2021-01-20 | 株式会社ニトムズ | 粘着クリーナー |
JP7106312B2 (ja) * | 2018-03-19 | 2022-07-26 | 株式会社Screenホールディングス | 支持フィルム、貼り付け方法、膜・電極接合体の製造方法および製造装置 |
JP7058545B2 (ja) * | 2018-04-25 | 2022-04-22 | 東京エレクトロン株式会社 | ガス供給管のクリーニング方法および処理システム |
JP2020121270A (ja) | 2019-01-30 | 2020-08-13 | 日東電工株式会社 | クリーニングシートおよびクリーニング機能付搬送部材 |
JP7165066B2 (ja) | 2019-01-30 | 2022-11-02 | 日東電工株式会社 | クリーニングシートおよびクリーニング機能付搬送部材 |
JP7270397B2 (ja) * | 2019-01-30 | 2023-05-10 | 日東電工株式会社 | クリーニングシートおよびクリーニング機能付搬送部材 |
JP7165065B2 (ja) * | 2019-01-30 | 2022-11-02 | 日東電工株式会社 | クリーニングシートおよびクリーニング機能付搬送部材 |
JP2020121275A (ja) | 2019-01-30 | 2020-08-13 | 日東電工株式会社 | クリーニングシートおよびクリーニング機能付搬送部材 |
JP2020121274A (ja) | 2019-01-30 | 2020-08-13 | 日東電工株式会社 | クリーニングシートおよびクリーニング機能付搬送部材 |
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JP2005286261A (ja) * | 2004-03-31 | 2005-10-13 | Nitto Denko Corp | クリーニング機能付き搬送部材と基板処理装置のクリーニング方法 |
JP2007035684A (ja) * | 2005-07-22 | 2007-02-08 | Nitto Denko Corp | 基板処理装置の除塵部材 |
JP2008019315A (ja) * | 2006-07-11 | 2008-01-31 | Nitto Denko Corp | 粘着剤層、その製造方法、粘着シート、クリーニングシート、クリーニング機能付き搬送部材およびクリーニング方法 |
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CN102413951A (zh) | 2012-04-11 |
JP2010259970A (ja) | 2010-11-18 |
KR20120004469A (ko) | 2012-01-12 |
TW201103652A (en) | 2011-02-01 |
US20120042902A1 (en) | 2012-02-23 |
TWI515051B (zh) | 2016-01-01 |
CN102413951B (zh) | 2016-07-06 |
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