WO2010115296A1 - 功率led散热基板、功率led产品及其制造方法 - Google Patents

功率led散热基板、功率led产品及其制造方法 Download PDF

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Publication number
WO2010115296A1
WO2010115296A1 PCT/CN2009/000388 CN2009000388W WO2010115296A1 WO 2010115296 A1 WO2010115296 A1 WO 2010115296A1 CN 2009000388 W CN2009000388 W CN 2009000388W WO 2010115296 A1 WO2010115296 A1 WO 2010115296A1
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WIPO (PCT)
Prior art keywords
substrate
circuit substrate
counterbore
heat sink
power led
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PCT/CN2009/000388
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English (en)
French (fr)
Inventor
余彬海
李军政
夏勋力
Original Assignee
佛山市国星光电股份有限公司
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Application filed by 佛山市国星光电股份有限公司 filed Critical 佛山市国星光电股份有限公司
Priority to PCT/CN2009/000388 priority Critical patent/WO2010115296A1/zh
Priority to KR1020117024042A priority patent/KR101306217B1/ko
Priority to US13/263,736 priority patent/US20120061716A1/en
Priority to CN2009801544058A priority patent/CN102272924B/zh
Priority to JP2012503843A priority patent/JP2012523678A/ja
Priority to EP09842857A priority patent/EP2421038A1/en
Publication of WO2010115296A1 publication Critical patent/WO2010115296A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.

Definitions

  • the invention relates to a power LED heat dissipation substrate and a method for manufacturing the same, and a method for manufacturing the power LED product, and particularly to a power LED heat dissipation substrate having a counterbore and a heat sink structure, and a method for manufacturing the same The product. Background technique
  • Power LEDs show the trend of replacing traditional lighting sources because of their small size, long life, low driving voltage, low power consumption, fast response, and good shock resistance.
  • Power LED package mainly involves light, heat, electricity, structure and process, especially high-power LED. Among them, heat dissipation is an important factor affecting the light efficiency and life of power LED.
  • the electro-optical conversion efficiency of high-power LEDs is about 15%, and the remaining 85% is converted into thermal energy, and the emission spectrum of white LEDs does not contain infrared parts, so the heat cannot be released by radiation.
  • the lead frame-based power LED manufacturing method comprises the following steps: 1) forming a metal lead frame; 2) adding a heat sink to the metal lead frame; 3) molding a white or black colloid on the metal lead frame to form a cavity to fix Electrode lead and heat sink; 4) solid crystal on the heat sink; 5) gold wire bonding; 6) mounting optical lens on the frame; 7) Glue; 8) hardened; 9) separated.
  • this manufacturing method has a complicated process, low production efficiency, and high production cost.
  • the package structure cannot be mounted on a circuit board by automated testing, tape winding, and difficult to use high-efficiency surface mount technology, so Especially not suitable for large-scale production.
  • a ceramic substrate-based power LED manufacturing method the specific steps thereof include: 1) forming a metal circuit on a ceramic substrate by low-temperature sintering, wherein the ceramic substrate plays a heat dissipation function, the metal circuit plays a conductive role; 2) on the ceramic substrate Installing a metal reflective cavity; 3) mounting a chip in a metal reflective cavity on the ceramic substrate; 4) gold wire bonding; 5) mounting a lens having an optical structure on the metal reflective cavity.
  • the ceramic substrate has a complicated processing process, is difficult to process, and has high production cost.
  • conventional ceramic substrates such as aluminum nitride have poor thermal conductivity and a thermal conductivity of about 24 W/m. k , only 1 / 16 of the thermal conductivity of metallic copper. When the power of the LED device is large, especially when the device power reaches 5W or more, the heat dissipation effect is not ideal.
  • a method of fabricating a power LED substrate by means of a circuit board assembly heat sink has been proposed, such as the patent of WO20061 04325, the main steps of which are: 1) forming a multilayer circuit board; 2) Forming a through hole in each layer of the circuit board; 3) stacking the plurality of circuit boards having the through hole structure, so that the through holes of each of the circuit boards overlap each other to form a cavity; 4) toward the multilayer circuit board A heat sink is installed in the cavity.
  • this method requires superimposing assembly of multi-layer circuit boards and requires soldering.
  • the patent of CN1977399A provides a solution for an LED substrate fabricated by disposing a heat sink on a circuit board.
  • the main manufacturing methods include: 1) drilling a through hole in the circuit board, and processing the through hole The structure has a tapered surface; 2) the heat sink is manufactured, and the heat sink can be processed into a structure having a tapered surface; 3) the heat sink is assembled into the through hole of the circuit board.
  • the heat sink used in the manufacturing method has a thin design and a small heat dissipation amount, and is not suitable for a high-power LED device; and the manufacturing method is combined in the actual production, the way in which the through-hole is assembled with the heat sink
  • the force is weak, the heat sink is easy to fall off, difficult to locate, the reliability is poor, and the heat dissipation effect is not good.
  • the process of processing the taper surface of the circuit board is complicated, the consistency is difficult to control, and the product quality is difficult to guarantee.
  • the above methods also have the problems of relatively complicated structure, unstable product quality, and high cost when mass-produced LED products are produced in batches, especially when high-power LED products are produced.
  • the power LED products manufactured by the above method because of its manufacturing process, determine that its product structure is not suitable for automatic testing and braiding during product inspection, and needs to be soldered and installed during product application, thereby causing power LED products to be tested and installed. Very inconvenient, it is difficult to meet the needs of large-scale industrial production.
  • the present invention provides a method of manufacturing a heat dissipation substrate for a power LED, comprising the steps of:
  • the circuit substrate has a continuous high temperature capable of withstanding the mold clamping pressure and the injection pressure, and undergoing the molding process, and has high glass transition a circuit board having an integral structure composed of a material having a temperature and a shear resistance
  • the counterbore comprises a combination of large and small blind holes having the same axial direction, a through hole having a large aperture, and a through hole having a diameter of d and a hole; b) using a thermal conductive material to form a heat sink, the heat sink having a stepped column-shaped integral structure composed of an upper step and a lower step, and matching the shape and size of the counterbore of the circuit substrate;
  • Steps a) and b) can be carried out sequentially or simultaneously.
  • the invention provides a method for manufacturing a power LED using a circuit substrate, comprising the method for manufacturing a heat dissipation substrate according to the first aspect, the method comprising the following steps:
  • step c) the LED chip is bonded to the heat sink of the circuit substrate by a low temperature die bonding method
  • the invention provides a method for manufacturing a power LED using a circuit substrate, comprising the method for manufacturing a heat dissipation substrate according to the first aspect, wherein:
  • Step b) includes bonding the LED chip to the heat sink by a high temperature die bonding method; and step c) includes connecting the electrode of the LED chip to the metal line on the circuit substrate.
  • the heat dissipating substrate prepared by the method of the first aspect is provided.
  • a power LED product prepared by the method of the second aspect or the third aspect is provided.
  • a light source is provided, characterized by comprising the power LED of the fifth aspect.
  • the method for manufacturing the heat dissipation substrate of the invention is simple, reduces the production process requirements of the prior art, and can effectively solve the heat dissipation problem of the power LED device, especially the heat dissipation problem of the high power LED product.
  • the manufacturing method of the power LED product of the heat dissipating substrate of the invention simplifies the production process of the existing power LED product, and the power LED product produced by the method of the invention has good consistency, high reliability, good heat dissipation effect, and light output. Good results, low cost, and the ability to be automated, tested, taped, and mounted on a circuit board using high-performance surface mount technology, making it ideal for large-scale production, enabling power LED products to meet growing market demands Provides protection.
  • the method of the present invention greatly simplifies the production of power LED heat sink substrates and
  • the process of power LED products is high in efficiency and low in cost, and can well meet the needs of high-volume, low-cost production of power LED products.
  • the heat dissipation effect of the substrate of the power LED heat dissipation substrate produced by the method is good, and the quality of the power LED product is made. Got a good improvement.
  • the power LED products produced by the method have low cost, high quality, easy detection and placement application, and create favorable conditions for large-scale production and wide application of products.
  • Figure 1 A flow chart showing a first embodiment of a method for manufacturing a heat dissipation substrate for a power LED of the present invention
  • FIG. 1 Schematic diagram of the structure of the heat dissipation substrate of the flow chart of Figure 1;
  • FIG 3 Schematic diagram of the heat sink and counterbore structure of the flow chart shown in Figure 1;
  • Figure 4 is a flow chart showing a second embodiment of a method for manufacturing a heat dissipation substrate for a power LED of the present invention
  • FIG. 5 Schematic diagram of the heat dissipation substrate of the flow chart of Figure 4.
  • Figure 6 is a flow chart showing a first embodiment of a method for manufacturing a power LED product based on the heat dissipating substrate of the present invention
  • Fig. 7 is a schematic view showing the structure of a high power LED product of the flow chart of Fig. 6;
  • Fig. 8 is a flow chart showing the second embodiment of the method for manufacturing a power LED product of the heat dissipating substrate according to the present invention.
  • Fig. 9 is a schematic view showing the structure of the strip light source product based on the heat dissipating substrate processing power of the present invention.
  • Fig. 10 is a schematic view showing the structure of the strip light source product based on the heat dissipating substrate processing power of the present invention.
  • Figure 11 is a schematic view showing the structure of the power strip light source product based on the heat dissipating substrate processing of the present invention.
  • Fig. 12 is a schematic view showing the structure of a power surface light source product based on the heat-dissipating substrate processing of the present invention.
  • FIG. 13 The power surface light source product based on the heat dissipation substrate processing of the present invention is shown Schematic diagram of the structure. Reference mark:
  • a first embodiment of a method of manufacturing a heat-dissipating substrate for a power LED of the present invention is made in conjunction with FIGS. 1, 2, and 3, and FIG. 9, FIG. 10, FIG. 11, FIG. 12, and FIG. Further explanation.
  • the step of manufacturing the heat-dissipating substrate for the (S1) power LED includes: (S11) substrate selection and processing, (S12) heat sink manufacturing, and (S13) assembly of the substrate and the heat sink.
  • the process steps of (S11) substrate selection and processing and (S1 2 ) heat sink fabrication may be performed in no particular order or simultaneously.
  • the (S11) substrate selection and processing steps include: (S111) substrate selection, (S112) sinker formation and (S113) metal wiring formation.
  • the structure of the selected circuit substrate is an integral structure, and single-sided, double-sided or multi-layer composite circuit boards are available, and a double-sided circuit board is preferred.
  • the circuit substrate has the mold clamping pressure and the injection pressure capable of withstanding the method of the present invention at the time of product packaging, and withstand the continuous high temperature of the molding process, in order to ensure that the circuit substrate does not generate at a high temperature during the product packaging process.
  • the deformation requires that the circuit substrate have a glass transition temperature higher than the molding temperature, and the circuit substrate should have a corresponding shear resistance.
  • the entire circuit substrate needs to withstand a molding clamping pressure of 0-6 Mpa, an injection pressure of 5-50 Mpa, and a high temperature of 60-220 for the molding process.
  • the duration of the molding process is less than 30 minutes, and the glass transition temperature is required to be at least 120 ° C.
  • the heat-dissipating substrate also needs to have the corresponding shear resistance to facilitate cutting.
  • the edge of the PCB board remains smooth and can cut out small PCB units.
  • the substrate material (PCB material) can be satisfied A paper substrate, a resin fiberglass cloth substrate, or a composite substrate substrate.
  • the preferred substrate material is a special resin fiberglass cloth substrate material which exhibits high heat-resistant physical properties in performance, has a high glass transition temperature, and has a glass transition temperature of up to 180- 320 ° C.
  • the dielectric constant of the substrate material is 2.0-3.3
  • glass transition temperature is 180-260 °C.
  • a typical value is about 210 °C.
  • the shape of the circuit substrate is determined according to the requirements of the manufacturing power LED product, and may be different shapes such as a rectangle, a square, a triangle, a polygon, a circle, a ring, an ellipse, an S shape, a U shape, a bar shape, a diamond shape, a heart shape. A shape or the like, or a combination of these shapes, such as the different shapes shown in FIGS. 9 to 13. According to the selection of these different shapes of substrates, it can well meet the process requirements of producing and processing different power LED products such as surface light sources, strip light sources and independent devices, which is beneficial to improve processing efficiency and reduce production cost.
  • the counterbore 2 can be disposed at different positions on the circuit substrate 1 in accordance with the requirements of the manufacturing power LED product.
  • the counterbore 2 is configured to be in communication with two holes of unequal size, as shown in FIGS. 2A and 2B.
  • the small holes 2a are through holes formed in the circuit substrate 1 as shown by drilling or punching
  • the large holes 2b are blind holes formed on the circuit substrate 1 as shown by milling or drilling.
  • the manufacturing method of the counterbore 2 may be such that the through hole 2a is formed first and then the blind hole 2b is formed.
  • the blind hole 2a may be formed first and then the through hole 2b may be formed.
  • the through hole 2a and the blind hole 2b have the same axial direction.
  • the through hole 2a and the blind hole 2b may be coaxial or non-coaxial, as shown in Fig.
  • the cross section of the through hole and the blind hole may be an arbitrary polygon.
  • the cross section of the through hole 2a is circular or square, and the blind hole 2b The cross section is circular.
  • the countersink processing process is simple, the formed counterbore has good consistency, and due to the selection of the circuit substrate, it is easy to process different positions and numbers of counterbores on different shaped circuit substrates according to the requirements of the power LED products.
  • (S 1 1 3 ) metal line formation on the basis of the formation of the counterbore on the circuit substrate, the metal line 3 is formed at a position corresponding to the counterbore 1 to realize electrical connection of the power LED product.
  • the metal line 3 is composed of an inner lead connecting portion 3a which is a metal line portion covered by the encapsulant after the product is packaged, and an outer lead connecting portion 3b which is exposed to the encapsulant after the product is packaged.
  • the outer metal wire portion is usually used as the product electrode.
  • a preferred solution is: forming a metal layer of the inner lead connecting portion 3a at a corresponding position around the counterbore by an etching process, a machining process, a laser process or a printing process, and forming it as needed around the counterbore 2
  • the metal layer of the external lead connecting portion 3b is formed by integrating the metal layer of the inner lead connecting portion 3a and the metal layer of the outer lead connecting portion 3b, and the metal wiring 3 capable of electrically connecting the power LEDs.
  • Another preferred solution is: forming a metal layer to form the inner lead connecting portion 3a at a position corresponding to the circumference of the upper surface of the circuit substrate and the counterbore 2 by an etching process, a machining process, a laser process or a printing process; a part of the metal layer constituting the external lead connecting portion 3b is formed on the upper surface and the lower surface of the circuit board 1 at a distance, and a metal layer connected to the metal layer is formed on the side surface of the wiring substrate 1 between the metal layers by metallization.
  • the metal layers together constitute an external lead connection portion 3b; the inner lead connection portion 3a and the outer lead connection portion 3b form an integral metal line 3 for electrically connecting the product, as shown in FIG. 2A and FIG. 2B. .
  • the layout of the metal line 3 extends the electrodes of the product to the bottom of the circuit substrate 1 (lower surface), the product is particularly suitable for surface mount mounting in mass production.
  • the layout of the metal lines 3 can be flexibly arranged according to the electrical performance requirements of the power LED products to be produced, thereby achieving electrical connection of the products, including series, parallel or series-parallel electrical connection relationships, as shown in FIG. Figure 1 2A shows.
  • the heat sink manufacturing step includes: (S 121) heat sink molding, (S 122) polishing cleaning, (S 123) Electroplating.
  • the heat sink is made of a thermally conductive material. It is preferable to use a metal material having good thermal conductivity and ductility such as copper, brass, aluminum, aluminum alloy or the like.
  • the heat sink 4 is formed into a stepped column-like integrated structure composed of an upper step 4a and a lower step 4b, and its shape and size are matched with the structure of the counterbore 2 of the above-mentioned circuit substrate 1, so that the heat sink 4 can be loaded into the counterbore A strong fit is formed in 2.
  • the diameter of the upper step 4a of the heat sink is close to the aperture of the through hole 2a
  • the diameter of the lower step 4b is close to the aperture of the blind hole 2b
  • the axis of the upper step 4a and the upper step 4b The directions are the same, which may be coaxial (Fig. 2F) or non-coaxial (Fig. 3A), and are perpendicular to the upper and lower surfaces of the circuit substrate 1, and the height of the lower step 4b is greater than or equal to the depth of the blind hole 2b, as shown in the drawing. 2F; the height of the upper step 4a of the heat sink is greater than or equal to the depth of the through hole 2a, as shown in FIGS.
  • the top of the upper step 4a of the heat sink is a plane or a concave reflecting cup, as shown in FIGS. 3B and 3C; preferably, the top cross section of the upper step 4a of the heat sink 4 is slightly smaller than the bottom cross section thereof, so that the upper step 4a is tapered,
  • the top cross section of the lower step 4b of the heat sink is slightly smaller than the bottom cross section thereof, so that the lower step 4b is tapered, as shown in Fig. 3D, so as to form a firm fit with the assembly of the heat sink and the counterbore.
  • the fabrication of the heat sink described above it is ensured that the lower step of the heat sink of the heat dissipation substrate can form good contact with the outside, is easy to dissipate heat, and since the upper step of the heat sink is flat or higher than the design of the circuit substrate and its top portion, The LEDs mounted thereon are improved and ensured to have a better light-emitting effect, and the stepped structure of the heat sink is easier to position and form a firm fit when mated with the countersink of the circuit substrate.
  • the process can easily process the heat sink into different shape of the step, the process is simple, the heat sink has high precision and consistency, and the heat sink 4 and the counterbore 2 of the circuit substrate 1 are facilitated.
  • the combination is firm and ensures high reliability of the heat sink substrate.
  • polishing and cleaning The heat sink 4 formed by the above processing is polished and cleaned by a polishing process.
  • the purpose of polishing is to smooth the surface of the heat sink 4 and to make the subsequent plating effect better.
  • the polished heat sink 4 has a reflective surface, with subsequent The electroplating process is combined to optimize the plating effect.
  • (S 123) Plating Electroplating is performed on the heat sink 4 after cleaning. The purpose of electroplating is to increase the solderability of the chip on the heat sink 4, and the second is to form a mirror surface on the surface of the heat sink 4, thereby increasing the reflective effect, thereby increasing the light-emitting effect of the LED product.
  • the heat sink 4 is placed in the counterbore 2 to form a firm fit.
  • the heat sink 4 and the counterbore 2 are firmly bonded in an interference fit manner or are firmly bonded in an adhesive manner.
  • the assembly of the heat sink 4 is easy to locate, the cooperation of the heat sink 4 and the counterbore 2 is very easy and firm, and it is not easy to loose or slip off, which solves the existing technology.
  • the process is complicated, the cost is high, the product reliability is poor, the heat dissipation effect is not good, and the product has poor light output.
  • the large simplification makes it possible to reduce the processing cost of the power LED heat sink substrate, improve the heat dissipation effect and light emission of the product, and ensure the high quality, high reliability and yield of the processed product.
  • a power LED heat dissipation substrate of different shapes can be produced, on which a countersink and a metal line can be arranged according to requirements, and are suitable as a power LED surface light source, such as a rectangle, a square, a triangle, a polygon, Circular, circular, elliptical, S-shaped, U-shaped, strip-shaped, rhombic, Z-shaped, heart-shaped, etc., or a combination of these shapes of the surface light source of the heat sink substrate, such as shown in Figure 1 2 A Case; It is also applicable to a heat sink substrate as a strip light source and a stand-alone device product, such as the case shown in FIG.
  • the heat sink substrate has a wide range of applications and is suitable for the production of power LED surface light sources, power LED strip light sources and independent power LED devices.
  • the present invention can be based on the shape of the power LED product and The requirements of the characteristics, the shape of the circuit substrate is conveniently determined, and the position and number of the counterbore can be conveniently arranged on the circuit substrate according to requirements, and the metal circuit is arranged on the circuit substrate according to requirements to realize the required power LED product. Electrical connection, including series, Parallel or series-parallel electrical connection relationship.
  • the heat dissipation substrate can well solve the complicated structure of the heat sink substrate of the power LED surface light source, the strip light source and the independent device.
  • the problem is that the processing is difficult, the production cost is high, the heat dissipation effect and the light output effect are not good.
  • a second embodiment of the method of manufacturing a heat-dissipating substrate for a power LED of the present invention will be further described with reference to FIGS. 4 and 5, and FIGS. 9 and 10.
  • (S4) is a heat dissipation substrate manufacturing method comprising a plurality of counterbore 2 and a heat sink 4 composed of a counterbore 2 and a heat sink 4 structure of the heat dissipation substrate 1 in the first embodiment.
  • the steps include: (S41) substrate selection and processing; (S42) heat sink manufacturing; (S43) assembly of the substrate and the heat sink.
  • the process steps of substrate selection and processing and heat sink manufacturing can be carried out sequentially or simultaneously.
  • the substrate selection and processing steps include: (S411) substrate selection, (S412) counterbore processing, (S413) division of grooves or/and holes, (S414) formation of metal lines, (S415) The formation of a cutting line.
  • Substrate material selection The structure of the selected circuit substrate is an integral structure, and a single-sided, double-sided or multi-layer composite circuit board can be selected, and a double-sided circuit board is preferred.
  • the selected circuit substrate material has the same characteristics, preferred embodiments, and positive technical effects as those of the circuit substrate according to the first embodiment of the present invention, and will not be described herein.
  • An array of a plurality of counterbore 2 is formed on the circuit board 1 of the unitary structure.
  • the counterbore 2 is a combination of large and small holes of the large-diameter blind holes 2b and d and the through-holes 2a of the apertures which are formed in the same axial direction on the substrate 1.
  • the blind hole 2b is formed by milling or drilling
  • the through hole 2a is formed by drilling or punching
  • the counterbore array is an array of holes of M rows and columns consisting of a plurality of counterbore 1 Wherein ⁇ , ⁇ are integers equal to or greater than 1, and ⁇ 1, ⁇ are at least different at least equal to 1, as shown in FIG. 5, a total of 4 rows and 5 columns of counterbore 2 arrays are disposed on the circuit substrate 1.
  • Preferred solution Disposing the dividing groove 5a or/and the dividing hole 5b on both sides of the counterbore row or the counterbore row; the sides of the counterbore corresponding to at least one dividing groove 5a or/and one dividing hole 5b, the dividing groove 5a or / and the dividing holes 5b are arranged in a line, a total of M+1 or N+1, such an arrangement is suitable for manufacturing a strip light source or a separate device, preferably the arranged dividing groove 5a or / and the dividing hole 5b and sink
  • the corresponding counterbore in the hole row or the counterbore row is equally spaced.
  • a preferred solution is: arranging the dividing groove 5a or/and the dividing hole 5b at the end of the counterbore row or the counterbore row, such an arrangement being suitable for manufacturing a surface light source or a strip light source, as shown in FIG. 9 and FIG. Show.
  • Another preferred solution for manufacturing the surface light source and the strip light source is that the dividing groove 5a or/and the dividing hole 5b may not be provided.
  • the divided grooves 5a or / and the divided holes 5b are formed on the wiring board 1 by punching or milling.
  • the dividing grooves are provided as a through groove 5 penetrating each of the counterbore rows, and are located at an intermediate position between the rows of the countersinks, and have a total of five grooves 5.
  • Another preferred embodiment, as shown in Fig. 5B, is to divide the divided holes 5b provided at the sides of each of the counterbore rows, and each of the counterbore rows shown corresponds to at least one hole 5b.
  • a metal wiring 3 is formed on the circuit substrate 1 to realize electrical connection of the product, the metal wiring 3 is composed of an internal lead connecting portion 3a and an external lead connecting portion 3b, and the internal lead connecting portion 3a means a product
  • the portion of the metal line covered by the encapsulant 9 after encapsulation, the outer lead connection 3b refers to the portion of the metal line 3 that is exposed on the outside of the encapsulant 9 after the product is packaged. It is preferable to form the metal wiring 3 by a etching process, a machining process, a laser process or a printing process and a metallization process.
  • a preferred solution is: forming a metal layer of the inner lead connecting portion 3a at a corresponding position around the counterbore 2 by an etching process, and the inner lead connecting portion 3a can be laid out according to the needs of the product to realize the LED chip. 7 series, parallel, series and parallel electrical connection relationship; the outer lead connection portion 3b metal layer is laid out as needed around the counterbore 2, so that the inner lead connection portion 3a metal layer and the outer lead connection portion 3b metal The metal circuit 3 is integrated into a layer and can realize electrical connection of the power LED.
  • a preferred solution is: corresponding to the counterbore 2 on the upper surface of the circuit substrate 1
  • the position is formed by an etching process, a machining process, a laser process, or a printing process to form a metal layer of the inner lead connection portion 3a; at the upper surface and the lower surface of the circuit substrate 1 along the dividing groove 5a or/and the dividing hole 5b, an etching process, a machining process, a laser
  • the processing or printing and printing process forms a part of the metal layer constituting the external lead connecting portion 3b, and a metal layer is formed on the side wall of the dividing groove 5a or/and the dividing hole 5b by a metallization process to divide the groove 5a with the above-mentioned circuit substrate 1.
  • the external lead connecting portion 3b; the inner lead connecting portion 3a metal layer and the outer lead connecting portion 3b metal layer constitute a metal line 3 for electrically connecting the product.
  • a metal layer 3 is formed on the upper surface, the lower surface, and the side surface of the remote circuit substrate 1 as an external lead connecting portion 3b, and the metal wiring 3 that is integrated with the internal lead connecting portion 3a to electrically connect the surface light source or the strip light source is Therefore, in this case, it is possible to form the metal wiring 3 without forming the lower surface of the wiring substrate 1 on both sides of the dividing groove 5a or/and the dividing hole 5b and the inner wall of the dividing groove 5a or/and the dividing hole 5b. It is not necessary to provide the dividing groove 5a or/and the dividing hole 5b.
  • a cutting positioning line 6 is formed at the end of the wiring board 1. It is preferable that the cutting positioning line 6 is formed on the wiring substrate 1 by an etching process, a machining process, a laser process, or a printing process. For the heat dissipating substrate 1 for manufacturing a strip light source or a separate device, it is preferable that the cutting positioning lines 6 are plural, located at each of the counterbore rows or/and the counterbore rows, and corresponding to the counterbore rows or/and sinks. The sides of the row of holes, a total of N+1 or / and M+1, preferably correspond to an intermediate position between each of the counterbore rows or/and between the rows of countersinks. As shown in FIG.
  • the end portion of the circuit board 1 corresponding to the counterbore row is provided with six cutting positioning lines 6.
  • the cutting positioning line 6a is disposed at the end of the counterbore row, a total of five
  • the cutting positioning line 6b is provided with the end of the counterbore column, for a total of six, such as product packaging
  • the cutting along the cutting line 6 it can be divided into N or M strip lights, or ⁇ ⁇ individual devices, for example, for Figure 5, can be divided into 4 strip lights, or 4 X 5 Separate devices.
  • the heat sink manufacturing steps include: (SI) heat sink forming, (S 4 22 ) polishing cleaning and (S423) plating.
  • the heat sink 4 is made of a material with good thermal conductivity.
  • a metal heat sink material with good thermal conductivity and ductility can be used, such as one of available in copper, brass, aluminum, or aluminum alloy.
  • the heat sink is formed by extrusion molding, metal casting or turning.
  • the heat sink 4 is formed into a stepped column-like integrated structure composed of an upper step and a lower step, and is matched with the counterbore 2 structure of the above-mentioned circuit substrate 1, so that it can be fitted into the counterbore 2 to form a firm fit.
  • Electroplating was performed on the heat sink 4 of the previous step. The purpose of electroplating is to increase the solderability of the chip 7 on the heat sink 4, and the second is to form a mirror surface on the surface of the heat sink 4, thereby increasing the reflective effect, thereby increasing the light-emitting effect of the LED product.
  • a heat sink 4 is placed in each of the counterbore 1 to form a heat sink 4, and the heat sink 4 and the counterbore 2 form a firm fit.
  • the heat sink 4 and the counterbore 2 are firmly bonded in an interference fit manner or are firmly bonded in an adhesive manner.
  • a total of 4 X 5 counterbore 2 are provided with a heat sink 4 in the circuit substrate.
  • the above method is suitable for manufacturing power LED surface light sources, strip light sources and individual LED devices, and is particularly suitable for manufacturing power LED surface light sources, strip light sources and individual LED devices with good heat dissipation effects.
  • the third embodiment is based on the power of the heat dissipation substrate according to the first embodiment and the second embodiment.
  • a first embodiment of a method of manufacturing an LED product This embodiment will be further described with reference to Figures 6 and 7, and Figures 9, 10, 11, 11, and 13.
  • a method for manufacturing a power LED based on the above heat dissipating substrate is disclosed, which is particularly suitable for a low temperature solid crystal case at a temperature lower than 260 °C.
  • the method comprises the following specific steps: (S601) substrate material selection and processing, heat sink manufacturing, (S602) Heat sink assembly, (S603) chip solid crystal, (S604) gold wire bonding, (S605) encapsulation molding, (S606) secondary hardening, (S607) device separation, and (S608) test sorting and Taping.
  • step S601 substrate selection and processing, heat sink manufacturing.
  • the circuit board 1 and the heat sink 4 are manufactured by the same method as described in the first embodiment and the second embodiment of the present invention, and will not be described herein.
  • the heat sink 4 is mounted in the counterbore 2 of the circuit substrate 1, and is firmly bonded in an interference fit manner or an adhesive manner.
  • the chip is solid crystal in step S603.
  • the chip 7 is bonded to the heat sink 4.
  • the bonding is carried out by solid-state bonding, silver paste or low-temperature soldering, etc., and the low-temperature die bonding method is usually carried out at a temperature lower than 260 °C.
  • one or more chips 7 can be bonded to the heat sink 4 in accordance with the design requirements of the power LED product.
  • the lead 8 is connected to the chip 7 electrode and connected to the inner lead connecting portion 3a on the line substrate 1.
  • the layout of the metal wires 3 can be made as needed to realize electrical connection between the chips 7, including series, parallel, series-parallel connection.
  • the encapsulation molding of the step S605 comprises: (S6051) injection molding, (S6052) curing and (S6053) demolding.
  • the injection step of S6051 the liquid encapsulant having good thermal stability and short-wavelength attenuation is injected into the gap between the molding die and the circuit substrate 1 at a time; the curing step of S 6052 is between the mold and the circuit substrate 1 The liquid encapsulant 9 is cured; in the step S6053, the mold after the curing is separated from the substrate, the encapsulant 9 is separated from the mold and fixed on the circuit substrate 1, and the package is formed in one time, that is, the package is completed on the circuit substrate 1 at one time.
  • One or more power LED surface light sources, strip light sources, or multiple independent power LED devices are used in the injection step of S6051.
  • the entire circuit substrate needs to withstand a molding clamping pressure of 0-6 Mpa, and the injection pressure is in the range of 5-50 Mpa, and the continuous high temperature range of the molding process to be withstood is 60-220 ° C, the duration of the molding process does not exceed 30 minutes; the preferred molding process temperature is 100 ⁇ 180 ° C, the duration is 5 ⁇ 15 minutes.
  • the encapsulant 9 covers one side of the wiring substrate 1 on which the chip 7 is mounted, and includes an inner lead connecting portion 3a covering the metal wiring 3, and the outer lead connecting portion 3b of the metal wiring 3 is left.
  • Figures 7A and 7B, Figure 10, Figure 11, Figure 12, Figure 13 show.
  • the encapsulant 9 serves to isolate the chip 7, the gold wire 8 and the like from external moisture and air, and also serves as an optical lens of the device.
  • the encapsulant is made of a material having good thermal stability and short-wavelength attenuation, and more preferably: a silica gel, a silica-based modified material, an epoxy resin-based modified material, etc. .
  • the optical lens of the device may be a convex lens, a concave lens or a combined curved lens according to the requirements of the light-emitting characteristics of the power LED product, as shown in FIG. 7 , FIG. 10 , FIG. 11 , and FIG. 12 .
  • Figure 13 shows.
  • step S606 the power LED molded by the encapsulant 9 is placed in an oven to harden the encapsulant 9 to harden the encapsulant 9 so that the colloid 9 is firmly covered on the circuit substrate 1. 5 ⁇ The curing time is usually 15 0 ⁇ 20 ° C, baking time is 2. 5-3. 5 hours.
  • the circuit substrate 1 is cut by a dicing saw to cut and separate the power LED product.
  • the dicing saw cuts the circuit substrate 1 along the cutting positioning line 6, and separates a plurality of strip power LED products or separates M X N independent power LED devices.
  • the surface light source may or may not be cut. If the circuit substrate 1 has multiple surface light source units, the cutting is required, otherwise the cutting is not required.
  • the fourth embodiment is a second preferred embodiment of the method for manufacturing a power LED product of the heat dissipation substrate according to the first embodiment and the second embodiment. Referring to FIG. 7, FIG. 8, FIG. 9, and FIG. Figure 1 1 , Figure 1 2, Figure 13 shows the embodiment for further explanation.
  • a power LED manufacturing method based on the heat dissipation substrate of the present invention is disclosed, and is particularly suitable for a high temperature solid crystal case at a temperature higher than 260 °C.
  • the method includes: (S801) Substrate processing and heat sink manufacturing, (S802) chip solid crystal, (S803) heat sink assembly, (S804) gold wire bonding, (S805) package colloid molding and molding, (S806) secondary hardening, (S806) S807) device separation, and (S808) test sorting and tape.
  • the material selection and processing of the circuit substrate 1 and the heat sink manufacturing are the same as the method for manufacturing the heat dissipation substrate described in the first embodiment and the second embodiment. Narration.
  • chip solid crystal after the preparation of the heat sink 4, the chip 7 is first bonded to the heat sink 4.
  • One or more chips 7 can be bonded to the heat sink 4 in accordance with the design requirements of the power LED product.
  • the preferred process is high temperature soldering, reflow soldering, eutectic or AnSn high temperature die bonding, and high temperature die bonding is typically performed at temperatures above 260 °C.
  • step S803 after the solid crystal forming step is completed, the heat sink 4 containing the chip 7 is then assembled into the counterbore 2 of the substrate 1 in an interference fit or bonding manner to form a firm fit.
  • the lead 8 connects the electrode of the chip 7 and the inner lead connecting portion 3a on the wiring substrate 1. It should be noted that in the case where a plurality of chips 7 are fixed on the heat sink 4, electrical connection such as series, parallel, series-parallel connection between the chips 7 can be realized by the layout of the metal wires 3 as needed.
  • the encapsulated molding package molding comprises: (S8051) injection molding, (S8052) curing, and (S8053) demolding.
  • the liquid encapsulant 9 with good thermal stability and short-wavelength attenuation is injected into the gap between the molding die and the circuit substrate 1 at one time;
  • the step 8052 is a liquid encapsulation between the mold and the circuit substrate 1.
  • 9 is curing;
  • S8053 is to separate the mold after curing from the circuit substrate 1, and the encapsulant 9 is separated from the mold and fixed on the circuit substrate 1, and the package molding is completed at one time, and one or more packages are packaged on the circuit substrate 1 at a time.
  • the entire circuit substrate 1 needs to withstand a molding clamping pressure of 0-6 MPa, and an injection pressure of 5-50 MPa, which is required to withstand the continuous high temperature range of the molding process.
  • a molding clamping pressure of 0-6 MPa
  • an injection pressure of 5-50 MPa, which is required to withstand the continuous high temperature range of the molding process.
  • the duration of the molding process does not exceed 30 minutes; the preferred molding process temperature is 100 - 180 ° C, The duration is 5 to 15 minutes.
  • the encapsulant 9 covers the side of the wiring substrate 1 on which the chip 7 is mounted, and includes an inner lead connecting portion 3a covering the metal wiring 3, and retains the metal wiring outer lead connecting portion 3b. 7A and FIG. 7B, FIG. 10, FIG. 1 1 , FIG. 12, and FIG.
  • the encapsulant 9 serves to isolate the chip 7, the gold wire 8 and the like from external moisture and air, and also serves as an optical lens of the device.
  • the encapsulant 9 is made of a material having good thermal stability and short-wavelength attenuation, and more preferably silica gel, silica-based modified material, epoxy-based modified material, or the like.
  • the optical lens of the device may be a convex lens, a concave lens or a combined curved lens, depending on the design requirements of the power LED product.
  • step S806 the power LED device molded by the encapsulant 9 is placed in an oven to perform secondary hardening of the encapsulant 9 so as to be firmly covered on the circuit substrate 1.
  • the curing temperature is usually determined to be 15 0 ⁇ 20 ° C, the baking time is 2. 5-3. 5 hours.
  • the device separating step is a dicing machine cutting the circuit substrate 1 to cut the separated power LED product.
  • the dicing saw cuts the circuit substrate 1 along the cutting positioning line 6 to separate a plurality of strip power LED products, as shown in FIG. 10 and FIG.
  • Four strip power LED products can be segmented; ⁇ ⁇ ⁇ independent power LED devices can also be separated at most, as shown in Fig. 7C.
  • the cutting lines 6 are cut along each strip, the heat dissipating substrate 1 can be packaged. The good power LED is separated into MXN independent power LED devices.
  • the two cutting lines 6 are cut along the outermost side, four strip power LED products can also be segmented.
  • step S808 the separated high-power LED products are tested and classified by a test sorter, and the braiding package is implemented by a taping machine.
  • various power LED products such as a surface light source, a strip light source, and a stand-alone device can be manufactured.
  • the surface light source of the present invention may have different shapes, including a rectangle, a square, a triangle, a polygon, a circle, a ring, an ellipse, an S shape, a U shape, a bar shape, a diamond shape, a Z shape, a heart shape, or these shapes.
  • the position and the number of the counterbore 1 on the heat dissipation substrate 1 can be arranged according to the needs of the power LED product, and the processing is convenient;
  • One or more LED chips 7 are bonded according to the needs of the power LED product, and the layout of the metal lines 3 can realize the electrical connection of the LEDs according to the electrical performance requirements of the power LED products, including series, parallel or series-parallel connection.
  • the encapsulant 9 covers the LED chip 7 and part of the metal line 3 according to the requirements of the light-emitting characteristics of the power LED product, and is a once-formed optical lens, including a convex lens,
  • the concave lens or the combined curved lens can greatly improve the light-emitting effect of the product;
  • the product structure of the invention is suitable for automatic testing and tape wrapping, and can be installed by surface mounting, which is more suitable for scale installation.
  • the method of the invention has simple process and greatly simplifies the prior art process for producing power LEDs, reduces production cost and improves production efficiency, and the power LED product manufactured by the method of the invention has high reliability and consistent products. It has the advantages of good performance, good light-emitting effect and low cost. It is especially suitable for large-scale production and application. It meets the current large-scale demand for power LED products and provides good support for the popularization and application of power LED products.

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Description

功率 LED散热基板、 功率 LED产品及其制造方法
技术领域
本发明涉及功率 LED散热基板及其功率 LED产品的制造方法 及其该方法的产品， 特别是涉及一种具有沉孔和热沉结构的功率 LED散热基板及其功率 LED产品的制造方法和该方法的产品。 背景技术
功率 LED因其具有体积小、 寿命长、驱动电压低、耗电量低、 反应速度快、 耐震性佳等优点， 展现出即将取代传统照明光源的 趋势。 功率 LED封装主要涉及光、 热、 电、 结构与工艺等方面， 尤其是大功率 LED , 其中， 散热问题是影响功率 LED光效与寿命 的重要因素。 目前， 大功率 LED的电光转换效率约为 15% , 剩余 的 85%转化为热能， 而且白光 LED的发光谱不包含红外部分， 所 以其热量不能依靠辐射释放。 如果一个 LED的芯片热量不能有效 散失， 则会导致芯片温度升高， 引起热应力的非均匀分布， 芯片 发光效率和荧光粉激射效率下降。 当温度超过一定值时， LED器 件的失效率将呈指数规律攀升， 元件温度每上升 2°C , 可靠性将 下降 1 0%。 在室温附近， 温度每升高 1 °C , LED的发光强度会相应 减少 1%左右。 当器件从环境温度上升到 20 °C时， 亮度下降多达 35°/。。 因此， 解决散热问题已成为研究功率型 LED封装方法的首 要课题。 然而， 目前常用的功率 LED制造方法普遍存在工艺复杂 和成本高等问题。 常见的功率 LED的制造采用有支架引线框架、 陶瓷基板等。
基于引线框架的功率 LED制造方法， 其具体步骤包括： 1)形 成一金属引线框架； 2 )往金属引线框加入热沉； 3 )在金属引线 框上塑封白色或黑色胶体形成腔体， 以固定电极引线与热沉； 4 ) 在热沉上固晶； 5)金线键合； 6 )在框架上安装光学透镜； 7 ) 注 胶； 8 )硬化； 9 )分离。 然而， 这种制造方法的工艺复杂， 生产 效率低，生产成本较高； 而且， 该封装结构不能采用自动化测试、 编带、 以及难于采用生产效率高的表面贴装技术安装在电路板 上， 所以特别不适合规模化生产。
一种基于陶瓷基板的功率 LED制造方法，其具体步骤包括： 1 ) 在陶瓷基板上经低温烧结形成金属线路， 其中陶瓷基板起到散热 作用， 金属线路起到导电作用； 2 )在陶瓷基板上安装一金属反 射腔； 3 )在陶瓷基板上的金属反射腔内安装芯片； 4 )金线键合； 5 )在金属反射腔上安装具有光学结构的透镜。 然而， 陶瓷基板 加工工艺复杂， 加工难度大， 生产成本高， 而且， 虽然陶瓷基板 具有良好的绝缘性， 但是如氮化铝等常规陶瓷基板的导热性能较 差， 导热系数约为 24W/m · k , 仅为金属铜导热系数的 1 / 16。 当 LED器件的功率较大， 尤其是器件功率达到 5W以上时， 其散热效 果很不理想。
为了节约生产成本， 有人已提出一种以线路板装配热沉的方 式制作的功率 LED基板的方法， 例如公开号为 WO20061 04325的 专利， 其主要步骤为： 1 )形成多层线路板； 2 )在每层线路板上 形成通孔； 3 )将具有通孔结构的多层线路板叠在一起， 使每层 线路板的通孔相互重合， 形成一个腔体； 4 )往多层线路板的腔 体内安装热沉。 然而， 这种方式需要实现多层线路板的叠加装配 并需要焊接， 制造工艺中对定位的要求非常高， 而且叠加线路板 焊接易出现虚焊、 焊接不平整等问题， 制作成本、 工艺难度明显 提高， 生产效率不高， 产品的质量难于保障。
关于解决 LED器件的散热问题， 已有在散热基板中开孔， 将 散热片置于孔中的技术方案。 例如公开号为 CN1977399A的专利， 提供了一种以线路板装配散热片的方式制作的 LED基板的解决方 案， 其主要制造方法包括： 1 )在线路板上钻有通孔， 可以把通 孔加工成具有锥面的结构； 2 )散热片制造， 可以把散热片加工 成具有锥面的结构； 3 )把散热片装配到线路板的通孔内。 该制 造方法使用的散热片设计较薄，散热量较小，不适用于大功率 LED 器件； 而且制造方法在实际生产中， 通孔装配散热片的方式结合 力弱， 散热片易脱落， 难定位， 可靠性差， 而且散热效果不佳。 另外， 线路板加工锥面的工艺复杂， 一致性难以控制， 产品质量 也难于保证。
现有上述方法还存在批量生产功率 LED产品时， 尤其是产生 大功率 LED产品时， 结构相对复杂， 产品质量不稳定、 成本高的 问题。 而且上述方法制造的功率 LED产品， 由于其制造工艺决定 了其产品结构在产品检测时不适于自动化测试、 编带， 在产品应 用时需要进行焊接安装， 因此造成功率 LED产品在检测和使用安 装上很不方便， 难于满足大规模工业化生产的需求。
因此， 针对上述制造方法及其该方法制造的功率 LED产品的 不足， 有必要开发一种工艺简单、 生产成本低、 产品质量好、 特 别适合规模化生产与应用的新型功率 LED散热基板及其功率 LED 产品的制造方法以及该方法的产品， 以满足日益发展的市场需 求。 发明内容 率 LED的制造方法和产品的缺陷， 尤其是大功率 LED的制造方法 和产品缺陷， 即功率 LED散热基板的制造方法存在工艺要求高， 流程复杂， 生产效率低、 成本高、 散热效果不佳的问题， 以及其 功率 LED产品也存在的产品成本高、 一致性差、 可靠性差、 产品 测试和使用安装不便的问题， 从而提供一种线路基板装配热沉的 散热基板制造方法以及基于该散热基板的功率 LED制造方法以及 利用本发明的方法制造的产品。
第一方面，本发明提供一种功率 LED用的散热基板制造方法， 其包括下列步骤：
a )在线路基板上制备沉孔，并且在线路基板上形成金属线路； 其中所述线路基板是具有能够承受模塑合模压力和注塑压力， 承 受模塑过程的持续高温， 具有高的玻璃转化温度和抗剪切能力的 材料构成的一体结构的线路基板， 沉孔包括轴方向相同的、 套通 的大孔径的盲孔和 d、孔径的通孔构成的大小孔组合； b )使用导热性材料制作热沉，使热沉具有由上台阶和下台阶 组成的梯台柱状的一体结构， 与上述线路基板的沉孔形状、 大小 相对应匹配；
c ) 将热沉装入沉孔中形成牢固配合；
其中步骤 a ) 和 b ) 可以先后或同时进行。
第二方面， 本发明提供一种利用线路基板制造功率 LED的方 法， 包括如第一方面所述的散热基板制造方法， 所述方法包括下 列步骤：
在步骤 c )之后将 LED芯片以低温固晶方法粘结在线路基板 的热沉上；
弓 I线连接所述 LED芯片的电极与线路基板上的金属线路。 第三方面， 本发明提供一种利用线路基板制造功率 LED的方 法， 包括如第一方面所述的散热基板制造方法， 其中：
步骤 b ) 包括将 LED芯片以高温固晶方法粘结在热沉上； 步骤 c ) 包括引线连接所述 LED芯片的电极与线路基板上的 金属线路。
第四方面， 提供如第一方面所述的方法所制备的散热基板。 第五方面， 提供如第二方面或第三方面所述的方法制备的功 率 LED产品。
第六方面， 提供一种光源， 其特征在于包括如第五方面所述 的功率 LED。
本发明的散热基板制造方法简便， 降低了现有技术的生产工 艺要求，能有效解决功率 LED器件的散热问题，尤其是大功率 LED 产品的散热问题。
本发明散热基板的功率 LED产品的制造方法简化了现有的功 率 LED产品的生产工艺， 基于本发明的方法生产出来的功率 LED 产品具有很好的一致性， 可靠性高， 散热效果好， 出光效果好， 成本低， 并且能采用自动化测试、 编带， 以及能采用生产效率高 的表面贴装技术安装在电路板上， 所以特别适合规模化生产， 为 功率 LED产品能够满足日益发展的市场需求提供了保障。
总之， 本发明的方法极大的简化了生产功率 LED散热基板和 功率 LED产品的工艺， 效率高、成本低， 能够很好的满足大批量、 低成本生产功率 LED产品的需要， 该方法生产的功率 LED散热基 板的基板的散热效果好， 使得功率 LED产品的品质得到了很好的 改善。 而且该方法生产的功率 LED产品的成本低、 品质高， 易于 检测和贴装应用， 为产品的规模化生产与广泛应用创造了很好的 条件。 附图说明
下面将参照附图对本发明的具体实施例进行更详细的说明， 其中：
图 1: 所示本发明功率 LED用的散热基板制造方法第一实施 例的流程图；
图 2: 所示图 1流程图的散热基板结构示意图；
图 3: 所示图 1流程图的热沉与沉孔结构示意图；
图 4: 所示本发明功率 LED用的散热基板制造方法第二实施 例的流程图；
图 5: 所示图 4流程图的散热基板结构示意图；
图 6: 所示本发明基于所述散热基板的功率 LED产品制造方 法第一实施例的流程图；
图 7: 所示图 6流程图的大功率 LED产品结构示意图； 图 8: 所示本发明基于所述散热基板的功率 LED产品制造方 法第二实施例的流程图。
图 9: 所示本发明基于所述散热基板加工功率条形光源产品 的结构示意图。
图 10: 所示本发明基于所述散热基板加工功率条形光源产品 的结构示意图。
图 11: 所示本发明基于所述散热基板加工功率条形光源产品 的结构示意图。
图 12: 所示本发明基于所述散热基板加工的功率面光源产品 的结构示意图。
图 13: 所示本发明基于所述散热基板加工的功率面光源产品 的结构示意图。 附图标记：
1 线路基板； 2沉孔： 小孔 2a, 大孔 2b; 3金属线路： 内部 引线连接部 3a, 外部引线连接部 3b; 4热沉： 上台阶 4a和下台 阶 4b; 5分割槽 5a, 分割孔 5b; 6切割定位线； 7 LED芯片； 8 引线； 9封装胶体。 具体实施方式
对本发明功率 LED用的散热基板制造方法的第一实施例， 结 合附图 1、 附图 2和附图 3, 以及附图 9、 附图 10、 附图 11、 附 图 12、 附图 13作进一步说明。
在本实施例中， （S1 ) 功率 LED用的散热基板制造方法步骤 包括： （S11 )基板选材与加工、 （S12 ) 热沉制造、 （S13)基 板与热沉的装配。 其中， （S11 )基板选材与加工和（S12 )热沉 制造的工艺步骤可以不分先后或同时进行。
如附图 1所示， （S11 )基板选材与加工步骤包括： （S111) 基 板选材， （ S112 ) 沉孔形成和（ S113 )金属线路形成。
(S111) 基板选材：选用的线路基板的结构为一体结构，可选 单面、 双面或者多层复合线路板， 以双面线路板为优选方案。
在本发明中，需要线路基板具有能够承受本发明方法在产品 封装时的模塑合模压力和注塑压力， 承受模塑过程的持续高温， 为了在产品封装过程中保证线路基板在高温下不产生变形，要求 线路基板具有高于模塑温度的的玻璃转化温度，并且线路基板应 具有相应的抗剪切能力。通常情况下，在本发明方法的产品封装 时， 整个线路基板需要承受的模塑合模压力为 0-6 Mpa, 注塑压 力在 5-50 Mpa范围，需要承受模塑过程的高温在 60-220°C范围， 模塑过程的持续时间不超过 30分钟， 需要具有的玻璃转化温度 至少为 120°C, 在进行产品的切割时， 散热基板还需要具备相应 的抗剪切能力，以利于切割后的 PCB板边缘保持平滑和能够切割 出面积小的 PCB单元。 基板材料（PCB板材料）可以是满足上述 条件的纸质基板、树脂玻纤布基板、 复合基材基板。 优选的基板 材料是特殊性树脂玻纤布基板，所述特殊性树脂玻纤布基板材料 在性能上表现出高耐热的物理特性，具有高的玻璃转化温度，其 玻璃转化温度可达到 180-320°C。 并且还具有低的介电常数（通 常不大于 5.0) 和低吸水性 （通常吸收性不高于 0.4% ) 以及低 介质损耗角正切值（通常为 0.005-0.03 ) , 优选的是聚酰亚胺 树脂（PI)、 氰酸酯树脂（CE)、 双马来酰亚胺三嗪树脂（BT) 、 热 固性聚苯醚类树脂（PPE 或 PP0) 等材料， 优选的是基板材料的 介电常数为 2.0-3.3, 玻璃转化温度是 180-260°C。 例如对于双 马来酰亚胺三嗪树脂（BT)材料的玻璃转化温度而言， 其典型值 是 210°C左右。 选用这些材料作为基板， 能够很好的满足生产加 工工艺的要求和功率 L E D产品电性能的要求，并且很大程度的降 低现有功率 LED散热基板的生产成本。
线路基板的形状是根据制造功率 LED产品的需求确定， 可以 是不同形状， 如矩形、 方形、 三角形、 多边形、 圆形、 环形、 椭 圆形、 S形、 U形、 条形、 菱形、 心形的形状等， 或者这些形状 的组合， 例如附图 9至附图 13所示的不同形状。 根据选用这些 不同形状的基板， 能够很好的满足生产加工不同功率 LED产品如 面光源、 条形光源、 独立器件的工艺要求， 有利于提高加工生产 效率、 降低产生成本。
( S112 ) 沉孔形成： 根据制造功率 LED产品的需求， 可以在 线路基板 1上的不同位置设置沉孔 2。
在步骤 S112中，所述沉孔 2结构为大小不等的的两个孔组合 连通， 如附图 2A、 2B所示。 优选的是， 小孔 2a是通过钻孔或者 冲切方式在所示线路基板 1上形成的通孔， 大孔 2b是通过铣削 加工或者钻孔方式在所示线路基板 1上形成的盲孔。 所述沉孔 2 的制造方法可以先形成通孔 2a再形成盲孔 2b, 也可以先形成盲 孔 2a再形成通孔 2b, 通孔 2a与盲孔 2b的轴方向相同。 所述通 孔 2a与盲孔 2b可以是共轴或者不共轴， 如附图 2F所示为共轴， 附图 3A为不共轴。 所述通孔与所述盲孔的横切面可以为任意多 边形， 优选的是所述通孔 2a的横切面为圆形或正方形， 盲孔 2b 的横切面为圆形。
该沉孔加工工艺简单， 所形成的沉孔一致性好， 而且由于线 路基板的选材， 使得很容易做到根据功率 LED产品的需求在不同 形状的线路基板上加工不同位置和数量的沉孔， 使得制造功率 LED的散热基板尤其是制造大功率 LED的散热基板的工艺变得十 分简单，使制造不同的功率 LED光源所用的散热基板变得很便捷。
( S 1 1 3 )金属线路形成：在所述线路基板形成沉孔的基础上， 在与沉孔 1相对应的位置形成金属线路 3 , 以实现功率 LED产品 的电性连接。 金属线路 3由内部引线连接部 3a和外部引线连接 部 3b组成， 内部引线连接部 3a是指产品封装后被封装胶体覆盖 的金属线路部分， 外部引线连接部 3b是指产品封装后露在封装 胶体外面的金属线路部分， 通常作为产品电极。 一个优选的方案 是： 通过腐蚀工艺、 机械加工、 激光加工或者印刷打印工艺， 在 沉孔周围相对应的位置形成内部引线连接部 3a的金属层， 并在 沉孔 2周围较远处根据需要形成外部引线连接部 3b的金属层， 使所述内部引线连接部 3a的金属层和外部引线连接部 3b的金属 层组成一体的、 能实现功率 LED电性连接的金属线路 3。 另一个 优选的方案是： 通过腐蚀工艺、 机械加工、 激光加工或者印刷打 印工艺在线路基板上表面与沉孔 2周围相对应的位置形成金属层 构成内部引线连接部 3a ;在距沉孔 2周围较远处的线路基板 1上 表面、 下表面形成构成外部引线连接部 3b的部分金属层， 通过 金属化处理所述金属层间的线路基板 1的侧面形成与上述金属层 相连接的金属层， 所述金属层共同构成外部引线连接部 3b; 所述 内部引线连接部 3a和外部引线连接部 3b组成一体的、 实现产品 电性连接的金属线路 3 , 如附图 2A和附图 2B , 所示。 由于该金 属线路 3的布局将产品的电极延伸至其线路基板 1的底部（下表 面） ， 使其产品尤其适用于大批量生产的表面贴装型安装。 优选 的是， 金属线路 3的布局可以根据所要生产的功率 LED产品的电 性能要求而灵活布局， 从而实现产品的电性连接， 包括串联、 并 联或串并联等电连接关系， 如附图 9、 附图 1 2A所示。
(S 12)热沉制造步骤包括: (S 121)热沉成型, (S 122)抛光清洗、 (S 123)电镀。
(5121)热沉成型： 选用导热性的材料制作热沉 4。 优选的是 选用具有良好导热性和延展性的金属材料， 如紫铜、 黄铜、 铝、 铝合金等。
优选的是根据材料的特性通过挤压成型、 金属铸造、 车铣的 方式进行热沉的加工成型。 所述热沉 4加工成型为上台阶 4a和 下台阶 4b组成的梯台柱状一体结构， 其形状和大小与上述线路 基板 1的沉孔 2结构相对应匹配， 使热沉 4可以装入沉孔 2中形 成牢固配合。 优选的是， 所述热沉的上台阶 4a的直径与所述通 孔 2a的孔径接近， 下台阶 4b的直径与所述盲孔 2b的孔径接近， 所述上台阶 4a与上台阶 4b的轴方向相同，可以是共轴（附图 2F ) 或者不共轴（附图 3A ) , 并与线路基板 1的上下表面垂直， 下台 阶 4b的柱高大于或等于盲孔 2b的深度， 如附图 2F所示； 所述 热沉的上台阶 4a柱高大于或者等于通孔 2a的深度， 如附图 2F、 3B所示； 优选的是， 所述热沉的上台阶 4a柱顶部为一平面或者 为一下凹的反射杯， 如附图 3B和 3C所示； 优选的是， 所述热沉 4的上台阶 4a的顶部横切面略小于其底部横切面， 使得上台阶 4a呈锥形， 所述热沉的下台阶 4b的顶部横切面略小于其底部横 切面， 使得下台阶 4b呈锥形， 如附图 3D所示， 以便于热沉与沉 孔的装配形成牢固配合。 由于上述热沉的制作， 保证了散热基板 的热沉的下台阶能够与外部形成良好接触， 易于散除热量， 并且 由于热沉的上台阶平于或高出线路基板及其其顶部的设计， 提高 和保证了安装其上的 LED具有更好的出光效果， 而且热沉的台阶 式结构在与线路基板沉孔的配合时更易于定位和形成牢固配合。
本工艺能够很容易地将热沉的加工成所需要的不同的梯台的 形状， 工艺简单， 加工出的热沉精度高、 一致性好， 并且便于热 沉 4与线路基板 1的沉孔 2配合牢固， 保证散热基板具有高的可 靠性。
(5122)抛光清洗： 通过抛光工艺对于上述加工成型的热沉 4 进行抛光， 并进行清洗。 抛光的目的是让热沉 4表面变得光滑、 使后续的电镀效果更佳。 抛光后的热沉 4具有反光面， 与后续的 电镀工艺结合， 使电镀效果更加优化。
(S 123)电镀： 对于清洗后的热沉 4进行电镀。 电镀的目的一 是增加芯片在热沉 4上的可焊接性，二是在热沉 4表面形成镜面， 增加了反光效果， 从而增加 LED产品的出光效果。
( S 1 3 )热沉与线路基板的装配： 将热沉 4装入沉孔 2中形成 牢固配合。 优选的是所述热沉 4与沉孔 2以过盈配合方式牢固结 合， 或者以胶粘方式牢固结合。
由于本发明在沉孔 2和热沉 4的结构设计， 使得热沉 4的装 配易于定位， 热沉 4与沉孔 2的配合十分容易和牢固， 不易松动 或滑脱， 解决了现有技术存在的工艺复杂、 成本高、 产品可靠性 差、 散热效果不好、 产品出光性不良的问题。 艺， 尤其是对于现有的 功率 LED散热基板的
Figure imgf000012_0001
大的简化， 使得降低功率 LED散热基板加工成本、 提高产品散热 效果和出光性得以很好的实现， 并保证了加工产品的高品质、 高 可靠性和成品率。
基于上述功率 LED散热基板的制造方法可以生产出不同形状 的功率 LED散热基板，在其上可以根据需求布局沉孔、金属线路， 适用于作为功率 LED面光源， 如矩形、 方形、 三角形、 多边形、 圆形、 环形、 椭圆形、 S形、 U形、 条形、 菱形、 Z形、 心形的形 状等等，或者这些形状的组合的面光源的散热基板，例如附图 1 2 A 所示的情况； 也可以适用于作为条形光源以及独立器件产品的散 热基板， 例如附图 9所示的情况。 该散热基板应用范围广， 适用 于生产功率 LED面光源、 功率 LED条形光源以及独立的功率 LED 器件产品。
总之， 由于本发明方法的线路基板所选用的材料是十分易于 加工的材料， 同时该散热基板能够很好的满足功率 LED的散热和 电性能方面的要求， 本发明可以根据功率 LED产品的形状和特性 的要求， 方便地确定线路基板的形状， 并可以根据需求方便的在 线路基板上布设沉孔的位置与个数， 并在线路基板上根据需求布 设金属线路， 实现功率 LED产品的所需要的电性连接， 包括串联、 并联或串并联等电连接关系。 以制造出适于用户需求的功率 LED 面光源、 条形光源或独立器件的功率 LED散热基板， 该散热基板 很好的解决了功率 LED面光源、 条形光源、 独立器件的散热基板 结构复杂、 加工难度大、 生产成本高、 散热效果和出光效果不佳 的问题。 对本发明功率 LED用的散热基板制造方法的第二实施例， 结 合附图 4和附图 5, 以及附图 9、 附图 10, 作进一步说明。
在本实施例中， （S4 )是基于实施例一中的散热基板 1的沉 孔 2和热沉 4结构为基本单元结构组成的多个沉孔 2、 热沉 4组 成的散热基板制造方法， 其步骤包括： （S41 )基板选材与加工； ( S42 )热沉制造； （S43)基板与热沉的装配。 其中， 基板选材 与加工和热沉制造的工艺步骤可以不分先后或同时进行。
( S41 ) 的基板选材与加工步骤包括： （S411) 基板选材， ( S412 )沉孔的加工成型， （S413)分割槽或 /和孔的加工成型， ( S414 )金属线路的形成， （S415) 切割定位线的形成。
( S411 )基板选材： 选用的线路基板的结构为一体结构， 可 选单面、 双面或者多层复合线路板， 以双面线路板为优选方案。
在本实施例中， 选用的线路基板材料具有的特性、优选方案 以及积极的技术效果与本发明第一实施例所述的线路基板的选 材相同， 在此不复赘述。
( S412 ) 沉孔的加工成型： 在一体结构的线路基板 1上形成 多个沉孔 2组成的阵列。 其沉孔 2是在基板 1上形成轴方向相同 的、 套通的大孔径的盲孔 2 b和 d、孔径的通孔 2 a的大小孔组合。 优选的是盲孔 2b是通过铣削加工或者钻孔形成， 通孔 2a是通过 钻孔或者冲切方式形成， 所述沉孔阵列是由多个沉孔 1组成的 M 行 χΝ列的沉孔阵列， 其中 Μ、 Ν是等于或大于 1的整数， 且^1、 Ν至少不同时等于 1, 如附图 5所示线路基板 1上共设置 4行 X 5 列的沉孔 2阵列。
( S413)分割槽或 /和孔加工成型： 在基板 1上加工分割槽
5a或 /和分割孔 5b, 如附图 5A、 5B和附图 9所示。 优选方案之 一将分割槽 5a或 /和分割孔 5b设置在沉孔行或沉孔列的两侧边； 个沉孔的侧边至少对应有一个分割槽 5a或 /和一个分割孔 5b,所 述分割槽 5a或 /和分割孔 5b排列设置， 共 M+1条或 N+1条， 这 样的设置适于制造条形光源或独立器件， 优选的是排列的分割槽 5a或 /和分割孔 5b与沉孔列或沉孔行中对应的沉孔等间距。一个 优选方案是： 将分割槽 5a或 /和分割孔 5b设置在沉孔行或沉孔 列的端部， 这样的设置适于制造面光源或条形光源， 如附图 9、 附图 10所示。 对于制造面光源和条形光源的另一个优选方案是 可以不设置分割槽 5a或 /和分割孔 5b。
优选的是，设置的分割槽 5a或 /和分割孔 5b是通过冲切或者 铣槽方式在线路板 1上形成的。 如图 5A所示的一个优选方案， 设置的分割槽为贯通各沉孔列的一通槽 5, 并且位于各沉孔行间 的中间位置， 共有 5条槽 5。 如附图 5B所示的另一个优选方案， 为排列设置在各沉孔行的侧边的分割孔 5b,所示各沉孔行中的每 个沉孔侧边至少对应一个孔 5b。
( S414 )金属线路的形成： 在线路基板 1上形成金属线路 3 以实现产品的电性连接， 金属线路 3由内部引线连接部 3a和外 部引线连接部 3b组成， 内部引线连接部 3a是指产品封装后被封 装胶体 9覆盖的金属线路部分， 外部引线连接部 3b是指产品封 装后露在封装胶体 9外面的金属线路 3部分。 优选的是通过腐蚀 工艺、 机械加工、 激光加工或者印刷打印工艺和金属化工艺形成 金属线路 3。
一个优选的方案是： 通过腐蚀工艺， 在沉孔 2周围相对应的 位置形成内部引线连接部 3a的金属层， 所述内部引线连接部 3a 金属层可以根据产品的需要进行布局，以实现 LED芯片 7的串联、 并联、 串并联等电连接关系； 在沉孔 2周围较远处根据需要布局 形成外部引线连接部 3b金属层， 使所述内部引线连接部 3a金属 层和外部引线连接部 3b金属层组成一体的、 能实现功率 LED电 性连接的金属线路 3。
一个优选的方案是： 在线路基板 1上表面与沉孔 2相对应的 位置通过腐蚀工艺、 机械加工、 激光加工或者印刷打印工艺形成 内部引线连接部 3a金属层； 在沿分割槽 5a或 /和分割孔 5b线路 基板 1上表面、 下表面通过腐蚀工艺、 机械加工、 激光加工或者 印刷打印工艺形成构成外部引线连接部 3b的部分金属层， 通过 金属化处理工艺在所述分割槽 5a或 /和分割孔 5b的侧壁形成金 属层与上述线路基板 1分割槽 5a或 /和分割孔 5b两侧的上表面、 下表面的金属层相连接， 所述分割槽 5a或 /和分割孔 5b两侧的 上表面、 下表面和分割槽侧壁的相互连通的金属层共同构成外部 引线连接部 3b; 上述内部引线连接部 3a金属层和上述外部引线 连接部 3b金属层组成实现产品电性连接的金属线路 3。
需要指出， 在特定情况下， 比如需要制备面光源、 条形光源 时， 由于面光源、 条形光源的电源输入、 输出端可以设置在其两 端，可以只需要在相对于沉孔 2周围较远处的线路基板 1上表面、 下表面及侧面形成金属层作为外部引线连接部 3b ,与上述内部引 线连接部 3a组成一体的、 实现面光源或条形光源的电性连接的 金属线路 3即可以， 因此在此情况下， 一是可以无需在分割槽 5a 或 /和分割孔 5b两侧的线路基板 1下表面以及分割槽 5a或 /和分 割孔 5b的内壁形成金属线路 3 , 二是也可以无需设置分割槽 5a 或 /和分割孔 5b。
(S415) 切割定位线的形成：在线路板 1的端部形成切割定位 线 6。 优选的是所述切割定位线 6是通过腐蚀工艺、 机械加工、 激光加工或者印刷打印方式在线路基板 1上形成。 对用于制造条 形光源或独立器件的散热基板 1 ,优选的是切割定位线 6为多条， 位于各沉孔行或 /和沉孔列两端， 并对应各沉孔行或 /和沉孔列的 侧边， 共 N+1条或 /和 M+1条， 优选对应于各沉孔列间或 /和各沉 孔行间的中间位置。 如附图 5A所示线路基板 1上对应沉孔列的 端部设有 6条切割定位线 6。 例如， 在附图 5B所示的线路基板 1 上， 切割定位线 6a设置在沉孔行的端部， 共 5条， 切割定位线 6b设置沉孔列的端部， 共 6条， 如产品封装后沿切割定位线 6进 行切割的话， 可以将其分割为 N或 M个条形光源， 或者 Ν χ Μ个 独立器件， 例如对于附图 5Α能分割为 4个条形光源， 或者 4 X 5 个独立器件。
( 542 )热沉制造步骤包括： （S I )热沉成形， （S4 22)抛光 清洗和（S423)电镀。
( 5421 )热沉成型： 选用具有良好导热性的材料制作热沉 4。 可以选用具有良好导热性和延展性的金属热沉材料，如可选用紫 铜、 黄铜、 铝、 铝合金之一。 优选的是通过挤压成型、 金属铸造 或车铣方式进行热沉的加工成型。
所述热沉 4加工成型为上台阶和下台阶组成的梯台柱状一体 结构， 与上述线路基板 1的沉孔 2结构相对应匹配， 使之可以装 入沉孔 2中形成牢固配合。
(5422)抛光清洗： 通过抛光工艺对于加工成型的热沉 4进行 抛光， 并进行清洗。
(5423)电镀： 对于上一步骤的热沉 4进行电镀。 电镀的目的 一是增加芯片 7在热沉 4上的可焊接性， 二是在热沉 4表面形成 镜面， 增加了反光效果， 从而增加 LED产品的出光效果。
(543)热沉与线路基板的装配：在每一个沉孔 1中装入一个热 沉 4 , 共 Μ χ Ν个， 热沉 4与沉孔 2形成牢固配合。 优选的是所述 热沉 4与沉孔 2以过盈配合方式牢固结合， 或者以胶粘方式牢固 结合。 如附图 5所示的线路基板中共有 4 X 5个沉孔 2中装有热 沉 4。
上述方法适于制造功率 LED面光源、 条形光源和独立 LED器 件，尤其适于制造具有良好散热效果的功率 LED面光源、 条形光 源和独立 LED器件。 实施例三是基于实施例一、 实施例二所述的散热基板的功率
LED产品制造方法的第一个实施例。 结合附图 6和附图 7 , 以及 附图 9、 附图 10、 附图 11、 附图 12、 附图 13所示， 对于该实施 例作进一步说明。
在本实施例中披露了一种基于上述散热基板的功率 LED制造 方法， 特别适用于温度低于 260 °C的低温固晶情况。 该方法包括 下列具体步骤： （S601 )基板选材与加工、 热沉制造， ( S602 ) 热沉装配， （S603)芯片固晶， （S604)金线键合， （S605 )封装胶 模塑封装成型， （S606)二次硬化， （S607)器件分离， 以及（S608 ) 测试分选与编带。
在步骤 S601 , 基板选材与加工、 热沉制造。 制造线路基板 1 和热沉 4是采用本发明上述实施例一、 实施例二中所述的制造散 热基板的相同方法， 这里不复赘述。
在步骤 S602的热沉装配中，把热沉 4安装至线路基板 1的沉 孔 2内， 以过盈配合方式或粘胶方式牢固结合。
在步骤 S603的芯片固晶。 在已经完成步骤 S602的加工工艺 后的散热基板 1上， 将芯片 7粘结在所述热沉 4上。 在一个优选 例子中， 以固晶胶、 银浆或者低温焊料等以低温固晶方法粘接， 低温固晶方式通常在低于温度 260°C的范围进行。 而且， 可以根 据功率 LED产品的设计要求，在热沉 4上粘接一个或多个芯片 7。
在步骤 S604的金线键合中，引线 8连接所述芯片 7电极与线 路基板 1上的内部引线连接部 3a连接。 在热沉 4上固定有多个 芯片 7的情况下， 可以根据需要通过金属线路 3的布局， 以实现 芯片 7间的电性连接， 包括串联、 并联、 串并联等连接。
步骤 S605的封装胶模塑封装成型具体包括： （S6051 )注胶， ( S6052 ) 固化和 （S6053 )脱模。 在 S6051的注胶步骤， 一次性 地将具有热稳定性好、 抗短波长衰减的液态封装胶体往塑封模具 与线路基板 1间的空隙注入填充； S 6052固化步骤是将模具与线 路基板 1间的液态封装胶体 9进行固化； S6053步骤是将固化完 成后的模具与基板分开， 封装胶体 9脱离模具并固定在线路基板 1上， 一次性地完成封装成型， 即一次完成在线路基板 1上封装 出一个或多个功率 LED面光源、 条形光源， 或封装出多个独立功 率 LED器件。
通常情况下， 在本发明方法的产品封装时， 整个线路基板需 要承受的模塑合模压力为 0-6 Mpa , 注塑压力在 5-50 Mpa范围， 需要承受的模塑过程的持续高温范围在 60-220 °C ,模塑过程的持 续时间不超过 30分钟； 优选的模塑过程的温度是 100 ~ 180 °C , 持续时间是 5 ~ 15分钟。 封装胶体 9覆盖在装有芯片 7的线路基板 1一面， 包括覆盖 金属线路 3的内部引线连接部 3a,并且保留金属线路 3外部引线 连接部 3b。 如附图 7A和附图 7B , 附图 1 0、 附图 1 1、 附图 12、 附图 1 3所示。 所述封装胶体 9既起到隔离芯片 7、金线 8等与外 部湿气、 空气接触的作用， 又可作为器件的光学透镜。优选的是， 所述封装胶体选用具有热稳定性好、 抗短波长衰减的材料， 更加 优选的是： 选用硅胶、 以硅胶为基础的改性材料、 以环氧树脂为 基础的改性材料等。 另一个优选的是， 根据功率 LED产品的出光 特性的要求， 所述器件的光学透镜可为凸透镜、 凹透镜或组合曲 面透镜， 如附图 7、 附图 1 0、 附图 1 1、 附图 12、 附图 1 3所示。
在步骤 S606二次硬化中，把所述封装胶体 9模塑成型后的功 率 LED放进烘箱， 进行封装胶体 9硬化， 实现封装胶体 9硬化， 使胶体 9牢固覆盖在所述线路基板 1上。 根据封装胶体 9的材质 确定硬化的温度与时间， 硬化烘烤的温度通常为 15 0 ± 20 °C , 烘 烤时间为 2. 5-3. 5小时。
在步骤 S607的器件分离中， 利用划片机对于所述线路基板 1 进行切割， 切割分离功率 LED产品。 对于实施例二所述的散热基 板， 划片机沿所述切割定位线 6切割所述线路基板 1 , 分离出多 个条形功率 LED产品或分离出 M X N个独立功率 LED器件。 需要 说明的是， 对于面光源可以进行切割， 也可以不切割， 如果线路 基板 1有多个面光源单元， 即需要切割， 否则不需要切割。
在步骤 S 608的测试分选与编带中，通过测试分选机对分离出 来的所述功率 LED产品进行测试分类， 并且采用编带机实现编带 包装。 实施例四是基于实施例一、 实施例二所述的散热基板的功率 LED产品制造方法的第二个优选实施例， 结合附图 7、 附图 8、 附 图 9、 附图 1 0、 附图 1 1、 附图 1 2、 附图 1 3所示， 对于该实施例 作进一步说明。
在本实施例中披露一种基于本发明的散热基板的功率 LED制 造方法， 特别适合温度高于 260 °C的高温固晶情况。 该方法包括： ( S801 )基板加工与热沉制造， （S802 ) 芯片固晶， （S803) 热 沉装配， (S804)金线键合，（S805 )封装胶体模塑封装成型, (S806) 二次硬化， （S807)器件分离， 以及 （ S808 ) 测试分选与编带。
在步骤 S801的基板选材与加工、 热沉制造中， 线路基板 1 的选材与加工、 热沉制造与采用上述实施例一、 实施例二中所述 的制造散热基板的方法相同， 在此不复赘述。
在步骤 S802芯片固晶中，在热沉 4制备完成后， 首先将芯片 7粘结在热沉 4上。 可以 居功率 LED产品的设计要求， 在热沉 4上粘接一个或多个芯片 7。 优选的工艺是以高频焊、 回流焊、 共晶或者 AnSn的高温固晶方式粘结， 高温固晶方式通常是在高 于 260 °C的温度范围进行。
在步骤 S803热沉装配中，是在完成固晶步骤后， 然后将装有 芯片 7的热沉 4以过盈配合或者粘结方式装配到所述基板 1的沉 孔 2内形成牢固配合。
在步骤 S804的金线键合中，引线 8连接所述芯片 7的电极与 线路基板 1上的内部引线连接部 3a。 需要指出的是， 在热沉 4上 固定有多个芯片 7的情况下， 可以根据需要通过对于金属线路 3 的布局， 实现芯片 7间的串联、 并联、 串并联等电连接。
在步骤 S805封装胶体模塑封装成型中， 具体包括： （S8051 ) 注胶， （S8052 ) 固化和 （S8053 ) 脱模。 S8051步骤是一次性地 将具有热稳定性好、 抗短波长衰减的液态封装胶体 9往塑封模具 与线路基板 1间的空隙注入填充； S 8052步骤是将模具与线路基 板 1间的液态封装胶体 9进行固化； S8053步骤是将固化完成后 的模具与线路基板 1分开， 封装胶体 9脱离模具并固定在线路基 板 1上， 一次性地完成封装成型， 一次在线路基板 1上封装出一 个或多个功率 LED面光源、 功率条形光源， 或封装出多个独立功 率 LED器件结构。
通常情况下， 在本发明方法的产品封装时， 整个线路基板 1 需要承受的模塑合模压力为 0-6 Mpa ,注塑压力在 5-50 Mpa范围， 需要承受的模塑过程的持续高温范围在 60-220 °C ,模塑过程的持 续时间不超过 30分钟； 优选的模塑过程的温度是 100 - 180 °C , 持续时间是 5 ~ 15分钟。
封装胶体 9覆盖在装有芯片 7的线路基板 1一面， 包括覆盖 金属线路 3的内部引线连接部 3a,并且保留金属线路外部引线连 接部 3b。 如附图 7A和附图 7B , 附图 1 0、 附图 1 1、 附图 12、 附 图 1 3所示。 所述封装胶体 9既起到隔离芯片 7、金线 8等与外部 湿气、 空气接触的作用， 又可作为器件的光学透镜。 优选的是所 述封装胶体 9选用具有热稳定性好、 抗短波长衰减的材料， 更加 优选的是硅胶、 以硅胶为基础的改性材料、 以环氧树脂为基础的 改性材料等。 优选的是， 根据功率 LED产品的设计要求， 所述器 件的光学透镜可为凸透镜、 凹透镜或组合曲面透镜。
在步骤 S806二次硬化中，把所述封装胶体 9模塑成型后的功 率 LED器件放进烘箱， 进行封装胶体 9的二次硬化， 使其牢固覆 盖在所述线路基板 1上。
根据封装胶体 9的材质确定硬化的温度与时间， 硬化烘烤的 温度通常为 15 0 ± 20 °C , 烘烤时间为 2. 5-3. 5小时。
在步骤 S807的器件分离中，所述器件分离步骤是划片机对于 所述线路基板 1进行切割， 切割分离功率 LED产品。 对于实施例 二所述的散热基板， 划片机沿所述切割定位线 6切割所述线路基 板 1 , 分离出多个条形功率 LED产品， 例如附图 1 0、 附图 1 1所 示， 可以分割出 4个条形功率 LED产品； 也可以最多分离出 Μ χ Ν 个独立功率 LED器件， 例如附图 7C所示， 如果沿各条切割定位 线 6切割，就可以将散热基板 1上封装好的功率 LED分离为 M X N 个独立功率 LED器件， 如果沿最外侧的两条切割定位线 6切割， 也可以分割出 4个条形功率 LED产品。 需要说明的是， 对于面光 源是可以有切割步骤， 也可以不切割， 如果线路基板 1有多个面 光源单元， 即需要切割， 否则不需要切割。
在步骤 S808中， 通过测试分选机对分离出来的所述大功率 LED产品进行测试分类， 并且采用编带机实现编带包装。 通过本发明的实施例三和实施例四的方法， 可以制造各种功 率 LED产品， 比如面光源、 条形光源、 独立器件。 本发明所述面光源可为不同形状， 包括矩形、 方形、 三角形、 多边形、 圆形、 环形、 椭圆形、 S形、 U形、 条形、 菱形、 Z形、 心形的形状， 或者这些形状的组合， 例如附图 1 0、 附图 12和附 图 1 3所示； 发明所述功率 LED产品的条形光源可以例如附图 1 1 所示； 发明所述功率 LED产品的独立器件可以例如附图 7C所示。
根据本发明所述功率 LED产品的面光源、 条形光源或独立器 件， 其散热基板 1上的沉孔 1位置和数量的设置可根据功率 LED 产品的需要布局， 加工方便； 其热沉 4上根据功率 LED产品的需 要粘结有一个或多个 LED芯片 7 , 其金属线路 3的布局根据功率 LED产品电性能要求能够实现 LED的电性连接， 包括串联、 并联 或串并联等电连接关系， 能够灵活实现金属线路布局及产品的电 极设置， 便于产品的安装； 其封装胶体 9是根据功率 LED产品出 光特性的要求覆盖 LED芯片 7和部分金属线路 3 , 为一次成形的 光学透镜， 包括凸透镜、 凹透镜或组合曲面透镜， 很好的改善了 产品的出光效果； 并且本发明的产品结构适于自动化测试和编带 包装， 且可以表面贴装方式实现安装， 更适于规模的安装使用。
综上所述， 本发明方法工艺简单， 极大的简化了现有技术生 产功率 LED的工艺降低了生产成本、 提高了生产效率， 利用本发 明方法制造的功率 LED产品具有高可靠性， 产品一致性好、 出光 效果好、 成本低廉的优点， 特别适合规模化生产与应用， 满足了 目前市场对于功率 LED产品的大批量需求， 并为功率 LED产品的 普及和应用提供了很好的支持。
显而易见， 在此描述的本发明可以有许多变化， 这种变化不能认 为偏离本发明的精神和范围。 因此， 所有对本领域技术人员显而易见 的改变， 都包括在本权利要求书的涵盖范围之内。

Claims

权 利 要 求
1、 一种功率 LED用的散热基板制造方法， 其包括下列步骤： a )在线路基板上制备沉孔，并且在线路基板上形成金属线路； 其中所述线路基板是具有能够承受模塑合模压力和注塑压力， 承 受模塑过程的持续高温， 具有高的玻璃转化温度和抗剪切能力的 材料构成的一体结构的线路基板， 沉孔包括轴方向相同的、 套通 的 d、孔径的通孔和大孔径的盲孔构成的大小孔组合；
b )使用导热性材料制作热沉，使热沉具有由上台阶和下台阶 组成的、 轴方向相同的梯台柱状的一体结构， 与上述线路基板的 沉孔形状、 大小相对应匹配；
c )将热沉装入沉孔中形成牢固配合；
其中步骤 a )和 b )可以先后或同时进行。
2、 如权利要求 1所述的方法， 其特征在于所述步骤 a )所述 线路基板整体具有能够承受 0-6 Mpa的模塑合模压力和 5-5 0 Mpa 的注塑压力， 能够承受模塑过程持续时间不超过 30分钟和模塑 温度为 60-220 °C的高温，所述线路基板具有的玻璃转化温度至少 为 120 °C , 具备切割后保持 PCB板边缘平滑和能切割出面积小的 PCB单元的抗剪切能力。
3、 如权利要求 2所述的方法， 其特征在于所述步骤 a )所述 线路基板具有能够承受模塑过程持续时间为 5-15分钟和模塑温 度为为 1 00-180 °C的高温。
4、 如权利要求 2所述的方法， 其特征在于： 步骤 a)中线路 基板采用纸基基板、 树脂玻纤布基板和复合基材基板材料之一作 为基板材料。
5、 如权利要求 2所述的方法， 其特征在于： 步骤 a)中线路 基板材料是特殊性树脂玻纤布基板， 所述基板具有玻璃转化温度 为 180-300 °C , 介电常数不大于 5. 0 , 水吸收性不高于 0. 4 % , 介 质损耗角正切值为 0. 005-0. 03。
6、 如权利要求 5所述的方法， 其特征在于： 步骤 a)中线路 基板的材料包括： 聚酰亚胺树脂、 氰酸酯树脂、 双马来酰亚胺三 嗪树脂、 热固性聚苯醚类树脂基板材料之一。
7、 如权利要求 1所述的方法， 其特征在于： 步骤 a)中线路 基板采取矩形、 方形、 三角形、 多边形、 圆形、 环形、 椭圆形、 S形、 U形、 条形、 菱形、 Z形、 心形的形状之一， 或者这些形状 的组合。
8、 如权利要求 1所述的方法， 其特征在于步骤 a ) 包括所述 沉孔的加工通过铣削加工或者钻孔方式形成盲孔， 通过钻孔或者 冲切方式形成通孔； 所述在线路基板上形成金属线路步骤是指形 成由内部引线连接部和外部引线连接部组成金属线路的步骤。
9、 如权利要求 8所述的方法， 其特征在于步骤 a ) 包括通过 腐蚀工艺、 机械加工、 激光加工或者印刷打印工艺之一在所述线 路基板上形成金属线路。
10、 如权利要求 8所述的方法， 其特征在于步骤 a )还包括 在沉孔周围线路基板上表面形成内部引线连接部； 在距沉孔周围 较远处的线路基板上表面、 下表面形成构成外部引线连接部的部 分金属层， 并通过金属化处理所述部分金属层间的线路基板侧面 形成与所述的部分金属层相连接的金属层， 共同构成外部引线连 接部； 内部引线连接部金属层和外部引线连接部金属层组成实现 产品电性连接的金属线路的步骤。
11、 如权利要求 1所述的方法， 其特征在于步骤 b ) 包括对 热沉进行电镀的步骤。
12、 如权利要求 11所述的方法， 其特征在于步骤 b ) 包括在 对热沉电镀之前进行抛光、 清洗的步骤。
13、 如权利要求 1所述的方法， 其特征在于步骤 b)使用的导 热材料是紫铜、 黄铜、 铝、 铝合金之一。
14、 如权利要求 1所述的方法， 其特征在于： 所述热沉装配 孔中形成牢固配合。
15、 如权利要求 1所述的方法， 其特征在于包括： 步骤 b)中 的热沉的上台阶柱高等于或大于通孔的深度， 下台阶柱高等于或 大于盲孔的深度， 所述上、 下台阶共轴或不共轴； 在所述上台阶柱顶部上制备一平面或者为一下凹的反射杯； 所述上台阶的顶部横切面略小于其底部横切面， 使得上台阶 呈锥形， 所述热沉的下台阶的顶部横切面略小于其底部横切面， 使得下台阶呈锥形；
所述线路基板的沉孔通孔的横切面是圆形、 方形或多边形， 盲孔的横切面是圆形。
16、如权利要求 1至 15任一项所述的方法， 其特征在于： 步 骤 a ) 中包括在线路基板上设置由多个沉孔组成的 M行 X N列的 阵列， 其中 M、 N是等于或大于 1的整数， 且^1、 N至少不同时等 于 1。
17、 如权利要求 16所述的方法， 其特征在于： 步骤 a ) 中包 括下列步骤： 在至少一个沉孔行或者沉孔列的侧边至少设置一个 分割槽或分割孔。
18、 如权利要求 16所述的方法， 其特征在于： 步骤 a ) 中其 包括下列步骤： 在各沉孔行或各沉孔列的侧边设置至少一个分割 孔的侧边至少对应有一个分割槽或者分割孔。
19、 如权利要求 17、 18之一所述的方法， 其特征在于：所述 步骤 a)形成金属线路的步骤包括：通过使用腐蚀工艺、机械加工、 激光加工或者印刷打印工艺之一， 在沉孔周围线路基板的上表面 形成内部引线连接部金属层， 和沿所述分割槽或 /和孔在线路基 板上表面、 下表面形成外部引线连接部的部分金属层， 通过金属 化工艺在所述分割槽或 /和分割孔的侧壁形成与线路基板上表 面、 下表面的金属层相连接的金属层， 所述金属层共同构成外部 引线连接部， 所述外部引线连接部金属层与所述内部引线连接部 金属层组成实现产品电性连接的金属线路。
20、 如权利要求 16所述的方法， 其特征在于所述步骤 a ) 中 制备分割槽或 /和分割孔的步骤采用冲切、 钻孔或者铣槽方式。
21、 如权利要求 16所述的方法， 其特征在于所述步骤 a ) 中 包括在线路基板的端部形成切割定位线， 切割定位线设置在沉孔 行或 /和沉孔列的两端并对应沉孔行或 /和沉孔列的侧边。
22、如权利要求 21所述的方法，其特征在于所述切割定位线 的制备是通过腐蚀工艺、 机械加工、 激光加工或者印刷打印工艺 之一形成。
23、 如权利要求 21所述的方法， 其特征在于： 所述分割槽或 /和分割孔排列设置， 与相邻的沉孔列或 /和沉孔行中对应的沉孔 等间距；
所述切割定位线的设置，对应相邻的沉孔行或 /和沉孔列间的 中间位置。
24、 一种利用线路基板制造功率 LED的方法， 包括如权利要 求 1-23之一所述的散热基板制造方法， 所述方法包括下列步骤：
1 )选择下述高温固晶方式或低温固晶方式之一进行 LED芯片 粘接的步骤：
高温固晶方式是： 在步骤 b ) 中包括将 LED芯片以高温固晶 方法粘结在热沉上；
低温固晶方式是： 在步骤 c )之后将 LED芯片以低温固晶方 法粘结在线路基板的热沉上；
2 ) 引线连接的步骤： 在步骤 c )之后引线连接所述 LED芯片 的电极与线路基板上的金属线路。
25、 如权利要求 24所述的方法， 其特征在于： 所述低温固晶 方法所采用温度低于 260 °C , 用固晶胶、 银浆或者低温焊料将芯 片粘结在热沉上； 所述高温固晶方法是采用温度高于 260 °C , 以 高频焊、 回流焊、 共晶或者 AnSn的高温固晶方式将 LED芯片粘 结在热沉上。
26、 如权利要求 24、 25之一所述的方法， 其中包括封装胶体 模塑封装成型步骤， 包括： 1 ) 注胶步骤： 一次性地将液态封装 胶体注入填充塑封模具与线路基板间的空隙， 使液态封装胶体形 成光学透镜覆盖在装有 LED芯片的线路基板一面； 2 ) 固化步骤： 将模具与基板间的液态封装胶体进行固化； 3 ) 脱模步骤： 将固 化完成后的模具与线路基板分开， 封装胶体脱离模具并固定在线 路基板上。
27、如权利要求 26所述的方法，其特征在于所述封装是使封 装胶体形成光学透镜覆盖芯片及其散热基板的金属线路内部连 接部， 并保留外部引线连接部。
28、如权利要求 27所述的方法， 其特征在于： 所述封装胶体 是具有热稳定性好和抗短波长衰减的封装胶体材料， 包括硅胶、 以硅胶为基础的改性材料、 以环氧树脂为基础的改性材料之一。
29、 如权利要求 26所述的方法， 其特征在于： 所述封装胶 体模塑封装成型过程的温度范围是 60-22 (TC , 持续时间不超过 30分钟。
30、 如权利要求 26所述的方法， 其特征在于： 所述封装胶 体模塑封装成型过程的温度范围是 100-180 °C , 持续时间为 5-15 分钟。
31、 如权利要求 26所述的方法， 其特征在于： 所述方法包 括封装胶体模塑封装成型后封装胶体二次硬化步骤， 二次硬化烘 烤温度为 150 ± 20 °C , 烘烤时间为 2. 5-3. 5小时。
32、如权利要求 24、 25之一所述的方法， 其特征在于所述引 线连接步骤是将所述 LED芯片的电极与线路基板上的内部引线连 接部连接， 实现 LED芯片与线路基板的电连接。
33、如权利要求 26所述的方法， 其特征在于： 所述封装胶体 形成的光学透镜可为凸透镜、 凹透镜或组合曲面透镜。
34、 如权利要求 1-23所述的方法所制备的线路基板。
35、 如权利要求 24-34所述的方法制备的功率 LED产品。
36、 一种光源， 其特征在于包括如权利要求 35所述的功率
LED。
37、如权利要求 36所述的光源，其特征在于所述光源为面光 源、 条形光源或独立器件之一。
PCT/CN2009/000388 2009-04-10 2009-04-10 功率led散热基板、功率led产品及其制造方法 WO2010115296A1 (zh)

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