TW201044653A - Power LED thermal dissipation substrate and method for manufacturing power LED products and products thereof - Google Patents

Abstract

The present invention provides a power LED substrate having a sunken hole and a heat sink structure and the method for manufacturing power LED products and the products thereof. It overcomes the existing power LED products that have several disadvantages including: increased process complexity, low productivity, high production costs, poor thermal conductivity, low reliability, and difficulties to test and mount. The method for manufacturing the power LED thermal substrate includes the following steps: a) selecting substrate material and processing the same, b) manufacturing heat sinks, and c) assembling the substrate and heat sinks. The method for manufacturing the power LED products of the present invention, based on the thermal substrate manufacturing method, includes the following steps: die bond process with chips, gold wire bonding, encapsulation molding, secondary hardening, device separation, and test, sorting and taping. The invention method is simple and has low production costs and high production efficiency. The power LED products of the present invention have the advantages such as high reliability, good quality, quality luminous, low cost, and simplicities to test and mount, and are especially suitable for large-scale production and applications.

Description

201044653 VI. Description of the Invention: [Technical Field] The present invention relates to a method for manufacturing a power_Lro I thermal substrate and a power LED product thereof, and a product thereof, in particular to a counterbore and a heat sink (heat sink) structure power LED heat sink substrate and its power LED product manufacturing method and product of the method. [Prior Art] Power LEDs have a tendency to replace traditional lighting sources because of their small size, long life, low driving voltage, low power consumption, fast response speed, and shock resistance #. Power LED package mainly involves light, heat, electricity, structure and process, especially high-power LED, in which the heat dissipation problem is an important factor affecting the work efficiency and life of LED #LED. It is seen that the high-power LED has an electro-optical conversion efficiency of about 15%, and the remaining 85% is converted into thermal energy, and the white LED's emission spectrum does not contain the infrared portion, so its heat cannot be released by radiation. If the heat of an LED chip cannot be effectively dissipated, the temperature of the wafer is increased, causing a non-uniform distribution of thermal stress, and the luminous efficiency of the wafer and the lasing efficiency of the fluorescent powder are lowered. When the temperature exceeds a certain value, the failure rate of the LED device will rise exponentially. For every 2 C rise in the component temperature, the reliability will decrease by 〇%. At around room temperature, for every 11 increase in temperature, the luminous intensity of the LED will be reduced by about 1%. When the device rises from ambient temperature to 20t, the brightness drops by as much as 35%. Therefore, solving the heat dissipation problem has become the primary issue in the study of power LED sealing methods. However, the current methods of power LED t-production generally have problems such as complicated process and high cost. Common power LEDs are manufactured using bracket lead frames and ceramic substrates 201044653

A lead frame-based power LED manufacturing method, the specific steps of which include: 1) opening a metal lead frame; 2) adding a heat sink to the metal lead frame; 3) molding a white or black colloid on the metal lead frame to form a cavity, To fix the electrode lead and heat sink; 4) to fix the crystal on the heat sink; 5) gold wire bonding; 6) women's optical lens on the frame; 7) glue injection; 8) hardening; 9) separation. However, this manufacturing method has a complicated process, low production efficiency, and high production cost. Moreover, the package structure cannot be mounted on a circuit board by automated testing, tape, and difficult to use high-efficiency surface mount technology. Especially not suitable for large-scale production. A method for manufacturing a power LED based on a ceramic substrate, the specific steps of which include: forming a metal line on a ceramic substrate by low temperature sintering, wherein the ceramic substrate has a heat dissipation effect, the metal line has a conductive effect; 2) mounting on the ceramic substrate - metal a reflective cavity; 3) mounting a wafer in a metal reflective cavity on the ceramic substrate; 4) gold wire bonding; 5) mounting a lens having an optical structure on the metal reflective cavity. However, the ceramic substrate processing process is complicated, the processing difficulty is high, and the production cost is high. And although the ceramic substrate has good insulation properties, the thermal conductivity of the conventional ceramic substrate such as aluminum nitride is poor, and the thermal conductivity is poor.

The coefficient is about 24W/m.k, which is only 1/16 of the thermal conductivity of metallic copper. When the power of the LED device is large, especially when the device power reaches 5W or more, the heat dissipation effect is not ideal. ^ The patent of power W02006104325 made in a way to save production cost sinks has been proposed as a method of assembling a thermal LED substrate with a circuit board, such as the disclosure number, the main steps are: 1) forming a multi-layer line 201044653 board; 2) Forming a through hole on each layer of the circuit board; 3) stacking the multi-layer circuit boards having the through-hole structure so that the through holes of each of the circuit boards overlap each other, forming a shape of H H) into the cavity of the multilayer circuit board Install the heat sink. However, there are 7 ways to realize the superimposed assembly of multi-layer circuit boards and need to be spliced. The requirements for positioning in the art are very high, and the welding of the superimposed circuit boards is easy to issue = virtual Tan, uneven welding, etc. The difficulty of the art is obviously raised, the production efficiency is not high, and the quality of the product is difficult to guarantee. ❹ ❹ About solving the heat dissipation problem of LED devices, there has been a technical solution for opening the heat sink in the hole in the heat dissipation substrate. For example, the Chinese patent of the second: 3"A provides a solution for assembling an LED substrate by using a circuit board to assemble a heat sink. The main manufacturing method includes: 2 through holes in the circuit board, which can be The through hole is processed into a tapered surface; the heat sink is manufactured, and the heat sink can be processed into a tapered surface. The heat sheet is assembled into the through hole of the circuit board. The manufacturing method uses the dispersion, the film, and the sheet. It is thinner and has a smaller heat dissipation, which is not suitable for high power [in the actual production of the ED method, the reliability of the through-hole assembly of the heat sink is poor 2] and the heat dissipation effect is not good. In addition, the process of processing the taper surface of the circuit board Complex, consistency is difficult to control 'product quality is also difficult to guarantee. 曰 Existing methods also exist in mass production of power LED products: when generating high-power LED products, the structure is relatively complex, product quality is not released, the cost is south. The method of manufacturing the power coffee is determined by the manufacturing process of the product structure. When the product is tested, it is not = automatic testing, braiding, and welding installation is required in the application of the product. Therefore, 5 201044653 causes power LED products to be inconvenient in testing and installation, and it is difficult to meet the needs of large-scale industrial production. Therefore, it is necessary to develop a simple process for the above manufacturing methods and the shortage of power LED products manufactured by the method. The invention relates to a novel power led heat dissipating substrate, a manufacturing method thereof and a product of the method, which are suitable for large-scale production and application, and to meet the growing market demand. The purpose is to overcome the defects of the above-mentioned existing power LED heat dissipation substrate and its power LED manufacturing method and product, especially the manufacturing method and product defect of the high power LED, that is, the manufacturing method of the power coffee heat dissipation substrate has high process requirements and complicated process. The problem of low production efficiency, high cost, and poor heat dissipation effect 'and its work # LED products also have poor product cost, poor reliability, 'product testing and inconvenient installation problems', thus providing a circuit board assembly heat sink Heat sink substrate manufacturing method and based on A method of manufacturing a power LED for a heat dissipating substrate and a product manufactured by the method of the present invention. In a first aspect, the present invention provides a method of manufacturing a heat dissipating substrate for a power LED, comprising the steps of: preparing a counterbore on a circuit substrate, and in a line Forming a metal line on the substrate, wherein the circuit substrate has a continuous high temperature capable of withstanding the mold clamping pressure and the plastic pressure 'to withstand the molding process', and has a high glass transition temperature and shear resistance. The circuit board of the integral structure composed of 枓, the hole includes a large hole blind hole with the same axial direction, a large hole diameter, and a small hole of the 201044653 through hole, and a combination of large and small holes; b) using a thermal conductive material The heat sink is made such that the heat sink has a stepped column-shaped integral structure composed of an upper step and a lower step, which is matched with the shape and size of the counterbore of the circuit substrate; c) the heat sink is placed in the counterbore to form a firm fit Where steps a) and b) can be carried out sequentially or simultaneously. In a second aspect, the present invention provides a method of manufacturing a power LED using a circuit substrate, comprising the method of manufacturing a heat dissipation substrate according to the first aspect, the method comprising the following steps: after the step c), the LED wafer is subjected to a low temperature solid crystal method Bonded to the heat sink of the circuit substrate; the leads connect the electrodes of the LED chip to the metal lines on the circuit substrate. In a second aspect, the present invention provides a method for manufacturing a power LED using a circuit substrate, comprising the method for manufacturing a heat dissipation substrate according to the first aspect, wherein: step b) comprises bonding the LED wafer to the heat sink by a high temperature solid crystal method. Step c) includes wires connecting the electrodes of the LED wafer to the metal lines on the circuit substrate. In a fourth aspect, there is provided a heat dissipating substrate prepared by the method of the first aspect. In a fifth aspect, there is provided a power LED product prepared by the method of the second or third aspect. 7 201044653 It is characterized in that it comprises a power source, such as the fifth aspect, providing a light source. The heat dissipation problem of the prior art device is reduced, and the heat dissipation substrate manufacturing method of the invention is simple and convenient, and can effectively solve the heat dissipation problem of the power LED. The manufacturing method of the power LED product of the heat dissipating substrate of the invention simplifies the production process of the existing power coffee product. 'The power LED product produced by the method of the invention has the sister (four)--, high reliability and heat dissipation effect: good: light The effect is good, the cost is low, and it can be installed on the circuit board by using automatic testing, π and moon d wood with high production efficiency surface mount technology, so it is especially suitable for large-scale production, which can meet the development of power LED products. Market demand provides protection. In summary, the method of the present invention greatly simplifies the manufacturing process of the power-emitting LED discrete substrate and the work-LED product, has high efficiency, low cost, and can well meet the needs of high-volume, low-cost production of power LED products. The heat dissipation effect of the substrate of the power LED heat dissipation substrate produced by the method is good, and the quality of the power LED is improved. Moreover, the power LED products produced by this method have low cost, high quality, and easy detection and placement applications, which create favorable conditions for large-scale production and wide application of products. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the embodiments of the invention. Before the present invention is described in detail, it is to be noted that in the following description, the like elements are denoted by the same reference numerals. A first embodiment of a method for manufacturing a heat-dissipating substrate for a power LED of the present invention is described in conjunction with FIG. 1, FIGS. 2A to 2F and FIGS. 3A to 3D, and FIG. 9, FIG. 1A, FIG. 12A to 12B and FIG. 13 for further explanation. In the present embodiment, the steps of the method for manufacturing the heat sink substrate for the '(si) power LED include: (sii) substrate selection and processing, (S12) heat sink fabrication, (S13) substrate Assembly with heat sink. Among them, (sn) substrate selection and processing and (S12) heat sink manufacturing process steps can be carried out sequentially or simultaneously. As shown in Fig. 1, the (s丨丨) substrate selection and processing steps include (sin) substrate selection, (S112) counterbore formation, and (S113) metal wiring formation. (S111) Substrate material selection: The structure of the selected circuit substrate is an integrated structure, and single-sided, double-sided or multi-layer composite circuit boards are available, and a double-sided circuit board is preferred. In the present invention, the circuit substrate is required to have the mold clamping pressure and the injection pressure capable of withstanding the method of the present invention at the time of product packaging, and to withstand the continuous two temperatures of the molding process, and to ensure the high temperature of the circuit substrate during the product packaging process. The deformation does not occur 'requires that the circuit substrate has a glass transition temperature higher than the molding temperature' and the circuit substrate should have a corresponding shear resistance. In the case of the product of the invention, the mold clamping pressure of the whole circuit substrate is 0_6 Mpa, and the injection pressure is in the range of 5_5 〇Mpa. The high temperature of the molding process is required to be in the range of 60_220t, molding. The duration of the process is no more than 30 minutes, and the glass transition temperature required to be at least 201044653 is 120C. 'When cutting the product, the heat-dissipating substrate also needs to have the corresponding shear resistance to facilitate the smoothness of the edge of the PCB after cutting. It is possible to cut out PCB units with a small area. The substrate material (pcB plate material) may be a paper substrate, a resin fiberglass cloth substrate, or a composite substrate substrate that satisfies the above conditions. The preferred substrate material is a special resin fiberglass cloth substrate material which exhibits high heat-resistant physical properties in performance, 'having a high glass transition temperature' and its glass transition temperature can reach 180-32 CTC. . And also has a low dielectric constant (usually no more than 5 〇) and low water absorption (usually no absorption is higher than 〇. 4%) and a low dielectric loss tangent (usually 0.005-0.03), preferably poly Imide resin (ρι), cyanate resin (CE) 'Bismaleimide triazine resin (BT), thermosetting polyphenylene ether tree (PPE or PPO), etc., preferably substrate material The dielectric constant is 2.0-3.3, and the glass transition temperature is 18〇_26 (rc. For example, for the glass transition temperature of bismaleimide triazine resin (BT) material, the typical value is about 210 C. These materials can be used as substrates to meet the requirements of the production process and the electrical performance of power LED products, and greatly reduce the production cost of existing power LED heat sink substrates. The shape of the circuit substrate is based on the manufacturing power LED products. Demand determination 'can be different shapes, such as rectangles, squares, triangles, polygons, circles

Rate LED products such as surface light source, strip light source, and independent device are beneficial to improve processing efficiency and reduce production cost. 10 201044653 (S112) Counterbore formation: According to the requirements of manufacturing power LED products, it can be set at different positions on the circuit substrate 1. Counterbore 2. In step S112, the counterbore 2 is configured to be in communication with two holes of unequal size, as shown in Figs. 2A and 2B. Preferably, the small holes are through holes formed in the circuit substrate 1 as shown by drilling or punching, and the large holes 2b are blind holes formed on the circuit substrate 1 as shown by milling or drilling. The method for manufacturing the counterbore 2 may be such that the through hole 2a is formed first to form the blind hole 2b'. Alternatively, the blind hole 2b may be formed first to form the through hole 2a. The through hole 2a and the blind hole 2b have the same axial direction. The through hole 2a and the blind hole 2b may be coaxial or non-coaxial, as shown in Fig. 2F as a common axis, and Fig. 3A is not coaxial. The cross section of the through hole 2a and the blind hole 2b may be an arbitrary polygon. Preferably, the cross section of the through hole 2a is circular or square, and the cross section of the blind hole 31 is circular. The countersink processing process is simple, the formed counterbore has good consistency, and due to the selection of the circuit substrate, it is easy to process different positions and numbers of counterbore on different shapes of the circuit substrate according to the requirements of the power LED product. The process of manufacturing the heat-dissipating substrate of the power LED, especially the heat-dissipating substrate for manufacturing the high-power LED, becomes very simple, and the heat-dissipating substrate used for manufacturing different power LED light sources becomes very convenient. (S113) Metal wiring formation: On the basis of the formation of the counterbore 2 on the wiring substrate, the metal wiring 3 is formed at a position corresponding to the counterbore 2 to realize electrical connection of the power LED product. The metal wiring 3 is composed of an inner lead connecting portion 3a and an outer lead connecting portion 3b, and the inner lead connecting portion "refers to a metal wiring portion covered by the encapsulant after the product is packaged in 2010." The external lead connecting portion 3b refers to the product after being packaged and exposed. · Compound (4) Metal circuit part, usually as a product electrode, a preferred solution is: through the smashing of the 'machining, laser-assisted or printing printing around the H counterbore: the corresponding position to form the metal layer of the internal lead connection 3a And forming a metal layer of the outer lead connecting portion % as far as possible around the counterbore 2, so that the metal layer of the inner lead connecting portion 3a and the metal layer of the outer lead connecting portion are composed of a body capable of realizing power The metal circuit 3 electrically connected to the LED. Another preferred solution is to form a metal layer on the upper surface of the circuit substrate and the periphery of the counterbore 2 by a rot process, a machining process, a misalignment process or a printing process. Forming an internal lead connecting portion ^; forming an external lead connecting portion 3b on the upper surface and the lower surface of the circuit substrate 1 farther from the periphery of the counterbore 2 a part of the metal layer, a metal layer connected to the metal layer is formed by metallizing the side surface of the circuit substrate i between the metal layers, the metal layer collectively constituting the outer lead connection portion %; the inner lead connection portion 3a and the outer portion The lead connecting portion 3b constitutes an integrated metal line 3 for electrically connecting the product, as shown in Fig. 2A and Fig. 2B. Since the layout of the metal line 3 extends the electrode of the product to the bottom of the wiring board ι ( The lower surface) makes its products especially suitable for surface-mount installations for mass production. Preferably, the layout of the metal lines 3 can be flexibly laid out according to the electrical performance requirements of the power LED products to be produced, thereby realizing the electricity of the products. (4) Connected to include series, parallel or series-parallel electrical connection, as shown in Figure 9 and Figure 12A. (S12) Thermal a manufacturing steps include: (S12i) heat sink molding, (si22) polishing 12

The preparation of the heat sink ensures that the lower step of the heat sink of the heat dissipation substrate can form good contact with the outside, is easy to dissipate heat, and is improved because the upper step of the heat sink is flat or higher than the design of the circuit substrate and the top thereof. And guaranteed 201044653 cleaning, (S123) key. Sinking: The heat sink 4 is made of a thermally conductive material. It is preferable to use a metal material having good thermal conductivity and ductility such as copper, brass, aluminum, aluminum alloy, or the like. It is preferable to carry out the processing of the heat sink by extrusion molding, metal casting, and turning and milling according to the characteristics of the material. The heat & 4 is shaped into a stepped column-like integrated structure composed of an upper step 4a and a lower step, and its shape and size are the same as the above-mentioned circuit substrate! The counterbore 2 structure is relatively matched so that the heat sink 4 can be fitted into the counterbore 2 to form a firm fit. Preferably, the diameter of the upper step 4a of the heat sink and the aperture of the through hole 2a are close to the diameter of the lower step and the aperture of the blind hole 2b, the upper step and the axial direction of the upper step The same 'can be coaxial (with 2F) or not coaxial (Fig. 3A)' and with the circuit board! The upper and lower surfaces of the upper and lower surfaces are lower than or equal to the depth of the blind holes 2b, as indicated by _ 2F; the upper step of the heat sink has a column height greater than or equal to the depth of the through holes &3B; it is preferred that 'the upper step of the heat sink & the top of the column is a plane or a concave concave cup, as shown in Figures 3B and 3C; preferably 'on the heat sink 4 The top cross-section of the step 4a is slightly smaller than the bottom cross-face thereof, so that the upper step 4a is tapered. The top k-cut surface of the lower step # of the heat sink is slightly smaller than the bottom cross-section thereof, so that the lower step 4b is tapered, such as Figure 3D is shown to facilitate a secure fit of the heat sink and counterbore assembly. Since the LEDs installed on 13 201044653 have better light output, the six owes and the light u κ π double fruit, and the stepped structure of the heat sink is easier to locate and form a firm fit when mated with the sinking hole of the circuit substrate. The process can easily process the shape of the different steps required for the processing of the heat sink, and the single, processed heat sink has high precision and consistency, and facilitates the heat sink 4 and the circuit substrate! The counterbore 2 is firmly matched to ensure high reliability of the heat sink substrate. (S122) (4) Cleaning: The heat sink 4 formed by the above-described processing is polished and cleaned by polishing. The purpose of polishing is to smooth the surface of the heat sink 4 and to make the subsequent electro-mineral effect better. The heat sink 4 that throws money has a reflective surface and is combined with the subsequent electric ore process to optimize the electric ore effect. (S123) Electric ore: This is done for the heat sink 4 after washing. The purpose of the electric ore is to increase the solderability of the wafer in heat; redundancy 4, and the second is to form a mirror surface in the heat sink 4 & add a reflective effect to increase the output of the coffee product (S13) heat sink and the circuit substrate Assembly: Match the heat sink 4^(4). It is preferable that the heat sink 4 and the job 2 are firmly bonded in an over-portion manner or firmly bonded in an adhesive manner. The structure of the tree is designed in pure 2 and heat sink 4, so that the heat sink 4, - β has been in the position of the 'heat sink 4 and the counterbore 2 is very easy and firm and easy to move 4, move or slip off' The above process of the present invention, which has the complicated process, the product reliability is poor, the heat dissipation effect is not good, and the product light-emitting property is not good, simplifies the existing power 14 201044653 production process, especially for the existing high power. The manufacturing process of the LEd heat-dissipating substrate has been greatly simplified, so that the reduction of the heat-emitting substrate of the power-emitting LED is improved, and the heat-dissipating effect and light-emitting property are well realized, and the high-quality, high-reliability and finished product of the processed product are also guaranteed. rate. _ Based on the manufacturing method of the above-mentioned power LED heat-dissipating substrate, a power LED heat-dissipating substrate of different opening/shapes can be produced, on which a hole, a metal line can be arranged according to requirements, and a power (four) surface light source such as a rectangle or a square can be used as appropriate.

Shape: triangular, polygonal, circular, circular, elliptical, s-shaped, u-shaped, strip-shaped, diamond-shaped, Z-shaped, heart-shaped shape, etc., or a combined heat sink substrate of the surface light source, such as the drawing The case of 12A is also applicable to the heat dissipation substrate as a strip light source and a separate device product. For example, the m heat dissipation substrate shown in FIG. 9 has a wide application range, and is suitable for a productivity rate LED surface light source and a power LED strip shape. Light source and independent power LED device products. VIII~, because the material selected for the circuit substrate of the method of the invention is a material which is very easy to process, and the heat dissipating substrate can well meet the requirements of heat dissipation and electrical performance of the power LED, the invention can be based on the power LED product. The shape and characteristics of the requirements, the shape of the circuit substrate can be easily determined and the position and number of the counterbore can be conveniently arranged on the circuit substrate according to the demand, and the metal circuit can be arranged on the circuit substrate according to the requirements to realize the power LED product. The required electrical connection, the package (four), parallel or series and parallel electrical connection relationship. To produce a power LED heat-dissipating substrate suitable for the user's needs, such as a power rib surface light source, a strip light source or a separate device, the heat dissipation of the board is solved by the power LED surface light source, the strip light source, and the independent device (4) 15 201044653 The substrate structure is complicated, the processing is difficult, the production cost is high, the heat dissipation effect and the light-emitting effect are not good. A second embodiment of the method for manufacturing a heat-dissipating substrate for a power LED of the present invention will be further described with reference to Fig. 4 and Figs. 5A to 5B, and Fig. 9 and Fig. 1B. In the present embodiment, (S4) is a heat dissipation substrate manufacturing method based on a plurality of counterbore 2 and a heat sink 4 composed of a basic unit structure based on the heat dissipation substrate of the embodiment - the redundant hole 2 and the heat sink 4 structure The steps include: ("I) substrate selection and processing; (S42) heat sink manufacturing; (S43) assembly of the substrate and the heat sink. wherein the substrate selection and processing and heat sink manufacturing process steps may be indefinite or simultaneous The substrate selection and processing steps of (S41) include: (S4U) substrate selection '(S412) counterbore processing, (S413) division groove or/and hole processing! (S414) metal line formation, (S414) S415) Formation of Cutting Positioning Line (S4U) Substrate Material Selection: The structure of the selected circuit substrate is a single-sided, double-sided or multi-layer composite circuit board, and a double-sided circuit board is preferred. In this embodiment, The selected circuit substrate material has the same characteristics, preferred solutions, and positive technical effects as the material selection of the circuit substrate according to the first embodiment of the present invention, and will not be described herein. (S412) Processing of the counterbore: in an integrated structure An array of a plurality of counterbore 2 is formed on the circuit substrate i. The counterbore 2 is a blind hole 2b having a large axial direction and a through hole 16 of a small aperture formed on the substrate 丨. Preferably, the blind hole 形成 is formed by milling or drilling, and the through hole 2a is formed by drilling or punching, the counterbore array is a μ row x N column of a plurality of counterbore 2 An array of holes, wherein M, N疋 are equal to or greater than an integer of 1, and M and N are at least equal to each other, and a total of 4 rows of arrays of counterbore 2 are arranged on the circuit substrate 1 as shown in FIG. 5A to (S413). Splitting groove or/and hole forming: processing the dividing groove 5a or/and the dividing hole 5b on the substrate 1, as shown in Figs. 5A, 5B and Fig. 9. One of the preferred embodiments is to divide the groove 5a or/and the dividing The holes 5b are disposed on both sides of the counterbore row or the counterbore row; the other preferably: each of the counterbore rows or each of the counterbore columns at least corresponds to a side of each of the counterbore rows There is a dividing groove 5a or / and a dividing hole 5b, and the dividing groove 5a or / and the dividing hole are arranged outside, and a total of M+1 or N+1 Such an arrangement is suitable for the manufacture of a strip-shaped light source or a separate device, preferably in that the aligned dividing grooves 5a or/and the dividing holes 5b are equally spaced from the corresponding counterbore in the counterbore row or the counterbore row. A preferred solution is: splitting The arrangement in which the groove 5a or/and the dividing hole 5b is provided in the counterbore row or the counterbore row is suitable for manufacturing a surface light source or a strip light source, as shown in Fig. 9, Fig. 10. For manufacturing a surface light source and Another preferred embodiment of the strip light source may not include the dividing groove 5a or/and the dividing hole 5b. It is preferable that the 'dividing groove 5a or/and the dividing hole 5b are formed on the wiring board 1 by punching or milling. A dividing groove formed as shown in Fig. 5A is a through groove 5a penetrating each of the counterbore rows, and is located at an intermediate position between the rows of the counterbore, and has a total of five grooves 5a. Another preferred embodiment, as shown in FIG. 5B, is a 17 201044653 two-hole 5b arranged on the side of each counterbore row, and each counterbore side of each of the counterbore rows is corresponding to at least one line metal line. Forming: forming a metal on the circuit substrate 1 to realize electrical connection of the product, the metal circuit 3 is composed of an internal lead connection and an external lead connection portion 3b, and the connection portion 33 is external to the metal line portion covered by the package impurity 9 after the core product package The secret part 3b refers to the part of the metal wire 3 which is exposed on the outside of the encapsulant 9 after the product is packaged. It is preferable to form the metal wiring 3 by a sulphur process, a machining process, a laser process or a printing process and a metallization process. A preferred solution is to form a metal layer of the inner lead connecting portion 3a at a position corresponding to the periphery of the counterbore 2, the inner lead being connected. The P 3a metal layer can be laid out according to the needs of the product, so as to realize (4) the series connection, the parallel connection, the series parallel connection and the like of the wafer 7; and the outer metal line layer is formed at a distance from the periphery of the counterbore 2 as needed; The metal layer and the outer lead connecting portion 3b are metal layers and the metal wires 3 which can realize electrical connection of the power LEDs. A preferred solution is: forming a metal layer of the inner lead connecting portion 3a through a rot #process, machining, misalignment processing or a printing snagging process at a position corresponding to the counterbore 2 on the upper surface of the circuit substrate i; 5a or / and the dividing hole 5b the upper surface and the lower surface of the circuit substrate i are formed into a part of the metal layer constituting the external lead connection p 3b by an etching process, a mechanical duplex, a recording plus or a printing and printing process, and are formed by a metallization process. The side wall of the dividing groove ^ or / and the dividing hole 5b forms a metal layer and the above-mentioned wiring substrate 1 = groove 5a or / and the metal layer phase 18 of the upper surface and the lower surface of both sides of the dividing hole 5b The metal layer of the upper surface of the upper surface of the groove 5a or/the dividing hole 5b_ and the side wall of the dividing groove collectively resembles the outer lead connecting portion 3b; the metal layer of the inner lead connecting portion 3a and the metal layer of the outer lead connecting portion A metal line 3 that electrically connects the product. It should be pointed out that in certain situations, such as when a surface light source or a strip light source needs to be prepared, since the power source input and the output end of the surface light source and the strip light source can be disposed at both ends thereof, it is only required to be around the surface of the sink & a metal layer is formed on the upper surface, the lower surface, and the side surface of the line base 1 at a distance as an external lead connecting portion 3b, and a metal material which is electrically connected to the surface light source or the strip light source is formed integrally with the inner lead connecting portion. 3 is ok, so in this case, it is possible to form the metal line 3' without forming the lower surface of the circuit substrate 1 on both sides of the division hole % and the inner wall of the division groove 5a or/and the division hole 5b. It is also possible to eliminate the need to provide the division groove or/and the division hole 5b. (S415) Formation of a cutting positioning line: a cutting positioning line 6 is formed at the end of the wiring board. Preferably, the cutting positioning line 6 is formed on the circuit substrate 1 by (4) process, machining, sputtering, or printing. For a heat dissipating substrate 用于 for manufacturing a strip light source or a stand-alone device, a preferred 疋-cut 疋 bit line 6 is a plurality of 'located at each of the counterbore rows or/and the counterbore columns, and corresponding to each counterbore row or/and The sides of the sinker row, a total of N+1 or / and M+1, preferably correspond to an intermediate position between each of the counterbore rows or/and between the counterbore rows. As shown in Fig. 5A, six cutting positioning lines 6 are provided at the end portions of the circuit board on the corresponding counterbore rows. For example, on the circuit substrate 1 shown in FIG. 5B, the cutting line 6a is disposed at the end of the counterbore row, a total of five, and the cutting positioning line 6b is set to 19 201044653, the end of the counterbore row, J £ 6 For cutting, the X/product package can be cut along the cutting line 6 (four) separate devices, for example, for 4 M strip light sources, or β - for example, for Figure 5A can be divided into 4 strip light sources ' or 4x5 Separate devices. (S42) Heat sink manufacturing steps include: (s42i) heat sink forming, (polishing cleaning and (S423) electric ore. Xiangguang 21,), heat sink forming: using materials with good thermal conductivity to produce condition 4. Optional Metal heat with good thermal conductivity and ductility, such as copper or brass U alloy. It is preferred to form the heat sink by extrusion, metal casting or milling. 4 The processing is formed into a stepped column-like integrated structure composed of an upper step and a lower step, and is matched with the structure of the counterbore 2 of the above-mentioned line, so that it can be fitted into the counterbore 2 to form a firm fit. (S422) Polishing and cleaning: The polishing process is performed by polishing, and the material is bucked. I'% (S423H is used for the electrothermal treatment of the heat sink 4 of the upper-step one to increase the weldability of the wafer 7 on the heat sink 4, and secondly, Forming a mirror surface on the surface of the heat sink 4 increases the reflection effect, thereby increasing the light-emitting effect of the LED product. ° (S43) Assembly of the heat sink and the circuit substrate: a heat sink 4 is installed in each counterbore 2, for a total of MxN The heat sink 4 forms a firm fit with the counterbore 2. Preferably, the heat sink 4 and the counterbore 2 are firmly combined in an interference fit manner or are firmly bonded in an adhesive manner. As shown in FIGS. 5A to 5B, a total of 4x5 counterbore 2 is provided with heat in the circuit substrate. Shen 4. 20 201044653 The above method is suitable for manufacturing power LED surface light source, strip light source and independent LED device, and is particularly suitable for manufacturing power lEd surface light source, strip light source and independent LED device with good heat dissipation effect. A first embodiment of a method for manufacturing a power LED product of a heat dissipating substrate according to the first embodiment and the second embodiment. 6A to 6B and FIGS. 7A to 7C, and FIG. 9, FIG. u, FIG. 12A to FIG. 12B and FIG. 13 are further illustrated for this embodiment. In this embodiment, a method for manufacturing a power LED based on the above heat dissipating substrate is disclosed, which is particularly suitable for temperatures below 26 〇 ° C. The low temperature solid crystal case. The method comprises the following specific steps: (S601) substrate material selection and processing, heat sink manufacturing, (S602) heat sink assembly, (S603) wafer solid crystal, (S6〇4) gold wire bonding, ( S605) encapsulation molding molding, (S6〇6) secondary hardening, (S607) device separation, and (S6〇8) test sorting and braiding. In step S601, substrate selection and processing, heat sink manufacturing. Manufacturing circuit substrate 1 and heat sink 4 are The same method for manufacturing the heat dissipation substrate according to the first embodiment and the second embodiment of the present invention is not described herein. In the heat sink assembly of step S602, the heat sink 4 is mounted in the counterbore 2 of the circuit substrate 1. The wafer is solid-bonded in an interference fit manner or in an adhesive manner. The wafer is crystallized in step S603. On the heat-dissipating substrate 1 after the I-addition process of step S6〇2 has been completed, the wafer 7 is bonded to the heat sink 4 on. In a preferred embodiment, the bonding is carried out by solid-state bonding, silver paste or low-temperature soldering at a low temperature die bonding method, and the low-temperature die bonding method is usually carried out at a temperature lower than the temperature of 26 Å. Moreover, one or more wafers 7 can be bonded to the heat sink 4 in accordance with the design requirements of the power LED product. 21 201044653 In the gold wire bonding of step S6G4, the lead 8 is connected to the wafer and the electrode is connected to the inner lead connecting portion 3a on the circuit board 1. In the case where a plurality of wafers 7 are fixed to the heat sink 4, the electrical connections between the crystals can be realized by the layout of the metal wires 3 as needed, including connection in series, parallel, series-parallel, and the like. The encapsulation molding of step S605 specifically includes: (s6〇5i) injection molding, (S6052) curing, and (S6053) demolding. In the injection molding step of S6 (m), the liquid encapsulant having good thermal stability and short-wavelength attenuation is injected into the gap between the plastic mold and the circuit substrate, and the curing step is to mold the mold and the circuit substrate. The liquid encapsulant 9 is cured; the step S6053 separates the mold after the curing from the substrate, and the encapsulant 9 is separated from the mold and fixed on the circuit substrate, and the package is formed at one time, that is, once on the circuit substrate. One or more power LED surface light sources, strip light sources, or a plurality of independent power LED devices are packaged. Generally, when the product of the method of the present invention is packaged, the entire circuit substrate needs to be subjected to mold clamping waste. The force is 〇6 Mpa, the injection pressure is in the range of 5_5〇Mpa, and the continuous high temperature range of the molding process to be withstand is 6〇22〇°C. The duration of the molding process does not exceed 30 minutes; the preferred molding process The temperature is 100 to 180 ° C and the duration is 5 to 15 minutes. The encapsulant 9 covers the surface of the circuit substrate 1 on which the wafer 7 is mounted, including the inner leads covering the metal wiring 3 The connecting portion 3a, and retaining the outer lead connecting portion 3b of the metal line 3. As shown in Fig. 7A and Fig. 7B, Fig. 1A, Fig. 11, Figs. 12A to 12B, and Fig. 13. The encapsulant 9 from 22 201044653 to the isolation BB sheet 7, gold wire 8 and so on and external moisture, air contact, but also as an optical lens of the device. Preferably, the package colloid is selected to have good thermal stability, short resistance For the wavelength-attenuating material, it is more preferable to select Shishijiao, modified material based on Shixi gum, epoxy resin-based modified material, etc. Another preferred one is based on power LED products. The optical lens of the device may be a convex lens, a concave lens or a combined curved lens, as shown in Figures 7A to 7C, Figure 1A, Figure u, Figure 12, and Figure 13. In the secondary hardening of S606, the power LED molded by the encapsulant 9 is placed in an oven to harden the encapsulant 9 to harden the encapsulant 9 so that the colloid 9 is firmly covered on the circuit substrate. The material of the plastic 9 is harder than the temperature and time The temperature for hardening and baking is usually 150 ± 20. (:, baking time is 25_3 5 hours. In the device separation of step S607, the circuit substrate 1 is cut by a dicing saw to cut and separate the power LED product. For the heat dissipation substrate described in the second embodiment, the dicing machine cuts the circuit substrate 1 along the cutting positioning line 6 to separate a plurality of strip power LED products or separate one independent power LED g pieces. Yes, the surface light source may or may not be cut. If the circuit substrate has a plurality of surface light source units, the cutting is required, otherwise no cutting is required. In the test sorting and braiding in step S608, the test is sorted. The machine tests and classifies the separated _ LED products, and uses a braiding machine to realize tape wrapping. The fourth embodiment is a second preferred embodiment of the method for manufacturing a power LED product based on the heat dissipation substrate 23 201044653 according to the first embodiment and the second embodiment. Referring to FIGS. 7A to 7C, FIGS. 8A to 8B, and FIG. 1 to 5, FIG. 12A to FIG. 12B, and FIG. 13, the embodiment will be further described. In the present embodiment, a power LED manufacturing method based on the heat dissipating substrate of the present invention is disclosed, which is particularly suitable for temperatures higher than 26 〇. The high temperature solid crystal condition of bismuth. The method comprises: (S801) substrate processing and heat sink manufacturing, (S8〇2) wafer solid sun, (S803) heat sink assembly, (S8〇4) gold wire bonding, (S8〇5) package colloid molding package Molding, (S806) secondary hardening, (S8〇7) device separation, and (S808) test sorting and braiding. In the substrate selection and processing of the substrate and the heat sink manufacturing in the step S801, the material selection and processing of the circuit substrate 1 and the heat sink manufacturing are the same as the method of manufacturing the heat dissipation substrate described in the first embodiment and the embodiment, and the description thereof will not be repeated here. . In the wafer solidification in step S802, after the preparation of the heat sink 4 is completed, the wafer 7 is first bonded to the heat sink 4. One or more wafers 7 can be bonded to the heat sink 4 in accordance with the design requirements of the power LED product. The preferred process is: high frequency solid crystal bonding of high frequency solid crystal bonding by means of frequency welding, reflow soldering, eutectic or AnSn is usually carried out at temperatures above 260 t. In the heat sink assembly of step S803, after the completion of the solid crystal step, the heat sink 4 equipped with the crucible > 17 is assembled into the counterbore 2 of the substrate 1 by interference fit or bonding to form a firm. Cooperate. In the gold wire bonding of the step circle, the 1 line 8 connects the electrode of the wafer 7 to the internal lead connecting portion % on the line i. It should be noted that in the case where a plurality of wafers 7 are fixed on one side, the series connection between the crystals #7, the parallel connection 24 201044653, and the series-parallel connection can be realized by the layout of the metal lines 3 as needed. In the step of encapsulating the colloidal molding package in step S805, specifically comprising: (S8051) injection molding (S8052) curing and (S8053) demolding. Step S8051

The liquid encapsulant 9 having good thermal stability and short-wavelength attenuation is injected into the gap between the molding die and the circuit substrate 1 at a time; the S8〇52 step is a liquid encapsulation between the mold and the circuit substrate 9 The step of S8053 is to separate the mold after the curing from the circuit substrate 1. The encapsulant 9 is separated from the mold and fixed on the circuit substrate 1, and the package is formed at one time, and one or more packages are packaged on the circuit substrate. Power LED surface light source, power strip light source, or packaged with multiple independent power lEd Is structure. In general, when the product of the method of the present invention is packaged, the entire circuit substrate 1 needs to withstand a molding clamping pressure of 〇_6 Mpa, and an injection pressure of 5 to 50 MPa, which is required to withstand the continuous high temperature range of the molding process. — 22 (TC 'the duration of the molding process is not (four) 3 〇 minutes; the preferred molding process temperature is 100 to 18 (TC, duration is 5 to 15 minutes. The encapsulant 9 covers the circuit substrate on which the wafer 7 is mounted) One side of the knife i includes the (four) lead connection portion % covering the metal line 3, and the metal line outer lead connection portion 3b is retained. For example, _ 7A and _ 7b, close ι〇, drawing Π, Figs. 12A to UB, Fig. 13 As shown, the encapsulant 9 functions to isolate the wafer 7, the gold wire 8 and the like from external moisture and air, and also serves as an optical lens of the device. Preferably, the package (4) 9 is selected and has thermal enthalpy. The material which is good in resistance to short-wavelength attenuation is more preferably a modified material based on the gelatin gum, a modified material based on the epoxy latex resin, etc., preferably, according to the power LED. Product design requirements, said The optical lens of the piece may be a convex lens, a concave lens or a combined curved lens. In the secondary hardening in step S806, the power LED device molded by the encapsulant 9 is placed in an oven to perform secondary hardening of the encapsulant 9 It is firmly covered on the circuit substrate 1. The curing temperature and time are determined according to the material of the encapsulant 9, and the curing baking temperature is usually i50: t2 (rc, baking time is 2.5·3 5 hours. In step S807 In the device separation, the device separating step is a dicing machine cutting the circuit substrate i to cut the power LED product. For the heat dissipation base of the second embodiment, the dicing machine is along the cutting positioning line. 6 Cutting the circuit substrate 丨, separating a plurality of strip power LED products, for example, as shown in FIG. 1 and FIG. n, four strip power LED products can be segmented; and at most one independent power coffee can be separated. The device 'is shown, for example, in Figure 7C. If the cutting line 6 is cut along each strip, the packaged power LED on the heat sink substrate 1 can be separated into two independent power LED devices, if the two along the outermost side The strip cutting positioning line 6 is cut, and four strip power LED products can also be segmented. It should be noted that, for the surface light source, there may be (four) steps, or not (four), if there are multiple surface light source units on the circuit substrate. That is, cutting is required, otherwise no cutting is required. In step S808, the separated high-power products are tested and classified by a test sorter, and the braiding machine is used for the knitting. The third embodiment and the implementation of the present invention are implemented. The method of the fourth embodiment can be various power LED products, such as a surface light source, a strip light source, and an independent device. w 26 201044653 The surface light source of the present invention can have different shapes, including a rectangle, a square, a triangle, a polygon, a circle, and the like. Ring, elliptical, s-shaped, (four), strip, mann, z-shaped, heart-shaped, or a combination of these shapes, such as shown in Figures 1A, 12A-12B, and 13; The strip light source of the power coffee product can be shown, for example, as u; a separate device for inventing the power coffee product can be shown, for example, in Figure 7C. According to the surface light source, the strip light source or the vertical device of the power LED product of the present invention, the position and the number of the counterbore 2 on the heat dissipation substrate 1 can be arranged according to the needs of the power LED product, and the processing is convenient; the heat sink 4 According to the needs of the power LED product, one or more LED chips 7 are eliminated, and the layout of the metal circuit 3 can realize the electrical connection of the LED according to the electrical performance requirements of the power LED product, including series connection, parallel connection or series-parallel connection. The monthly b is flexible enough to realize the metal circuit layout and the electrode arrangement of the product to facilitate the installation of the product; the encapsulant 9 covers the LED crystal #7 and part of the metal line 3 according to the requirements of the light output characteristics of the power LED product, and is a once-formed optical lens. The utility model comprises a convex lens, a concave lens or a combined curved lens, which can greatly improve the light-emitting effect of the product; and the product structure of the invention is suitable for automatic testing and braiding packaging, and can be mounted by a face-to-face mounting method, and is more suitable for scale. Installation and use. In summary, the method of the present invention is simple in process, and the process of producing the power LED in the prior art is simplified, the production cost is reduced, the production efficiency is improved, and the power LED product manufactured by the method of the invention has high reliability and product consistency. Good, good light output, low cost, especially suitable for standard production and application's meet the current market demand for power led products 27 201044653, and provide good support for the popularization and application of power led products. . It will be apparent that the invention described herein is susceptible to numerous modifications and variations may be made without departing from the spirit and scope of the invention. Accordingly, all changes that are obvious to those skilled in the art are included within the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flow chart showing a first embodiment of a method for manufacturing a heat-dissipating substrate for a power LED according to the present invention; FIGS. 2A to 2F are schematic views showing the structure of a heat-dissipating substrate of the flow chart of FIG. 1; FIGS. 3A to 3D are flowcharts of FIG. Figure 4 is a flow chart showing a second embodiment of a method for manufacturing a heat-dissipating substrate for a power LED of the present invention; Figures 5A to 5B are schematic views showing the structure of a heat-dissipating substrate of the flow chart of Figure 4; 6B is a flow chart of the first embodiment of the method for manufacturing a power LED product based on the heat dissipation substrate of the present invention; FIGS. 7A to 7C are schematic diagrams showing the structure of a high power LED product of the flow charts of FIGS. 6A to 6B; FIGS. 8A to 8B are based on the present invention; FIG. 9 is a schematic structural view of a power strip light source product based on the heat dissipating substrate processing according to the present invention; FIG. 1 is a schematic diagram of the present invention based on the heat dissipating substrate processing; Schematic diagram of a power strip light source product; 201044653 FIG. 11 is a schematic diagram of the structure of the power strip light source product based on the heat sink substrate of the present invention, and FIGS. 12A to 12B are based on the present invention. Processing power dissipation structure substrate surface light source products are not intended to, and FIG. 13 is a structure of the present invention is based on the heat-dissipating substrate processing power of the surface light source is not intended product.

29 201044653 [Explanation of main component symbols] 1 ..... circuit substrate 2 .......... counterbore 2a.........small 孑L< 2b. ........large hole 3 ..........metal line 3a.........internal lead connection 3b.........external lead connection Part 4 .......... heat sink 4a.........upper step 4b.........down step 5a......slot 5b......... split hole 6 .......... cutting positioning line 7 .......... LED chip 8 .......... Lead 9 ..... package encapsulation 30

Claims (1)

201044653 VII. Patent application scope: 1. A method for manufacturing a heat dissipation substrate for a power LED, comprising the steps of: a) preparing a counterbore on a circuit substrate and forming a metal line on the circuit substrate; wherein the circuit substrate is capable of A circuit board that is subjected to molding clamping pressure and injection pressure, withstands the continuous high temperature of the molding process, and has a high glass transition temperature and shear resistance. The counterbore consists of the same axial direction and through-hole. A combination of a small-aperture through-hole and a large-aperture blind hole; b) using a thermally conductive material to form a heat sink, the heat sink having a stepped column-like integral structure composed of an upper step and a lower step and having the same axial direction Corresponding to the shape and size of the counterbore of the above circuit substrate; and c) loading the heat sink into the counterbore to form a firm fit; wherein steps a) and b) can be performed sequentially or simultaneously. 2. The method for manufacturing a heat-dissipating substrate for a power LED according to claim 1, wherein the circuit substrate as described in the step a) has a mold clamping pressure capable of withstanding 0-6 MPa and 5_5 〇Mpa. The injection molding pressure can withstand the molding process for a duration of no more than 3 〇 minutes and a molding temperature of 60-22 (TC high temperature, the circuit substrate has a glass transition temperature of at least 12 (TC, with a PCB after cutting) The method of manufacturing a heat-dissipating substrate for a power LED according to the second aspect of the invention, wherein the circuit substrate of the step a) has a smoothness of the edge and a cutting resistance of the PCB unit having a small area. It can withstand a molding process for a duration of 5-15 minutes and a molding temperature of ι〇〇_ 31 201044653 180 ° C. 4. A method for manufacturing a heat-dissipating substrate for a power LED according to claim 2 Wherein, in the step a), the circuit substrate uses one of a paper base substrate, a resin fiberglass cloth substrate and a composite substrate material as a substrate material. 5. According to the second aspect of the patent application, the power LED is used for dispersion. The hot substrate manufacturing method, wherein the circuit substrate material in the step a) is a special resin fiberglass cloth substrate, the substrate has a glass transition temperature of 18 〇 3 〇〇 C, a dielectric constant of not more than 5.0, and water absorption is not high. Therefore, the dielectric loss tangent is 〇·〇〇5-0·03. The method for manufacturing a heat-dissipating substrate for a power LED according to claim 5, wherein the material of the circuit substrate in the step a) comprises: a polyimide resin, a cyanate resin, and a bismaleimide. One of a triazine resin and a thermosetting polyphenylene ether resin substrate material. 7. The method for manufacturing a heat-dissipating substrate for a power LED according to claim 1, wherein the circuit substrate in step a) is rectangular, square, triangular, polygonal, circular, circular, elliptical, s-shaped, U-shaped. One of a shape, a strip, a diamond, a Z shape, a heart shape, or a combination of these shapes. The method for manufacturing a heat-dissipating substrate for a power LED according to the invention of claim 2, wherein the step a) comprises processing the counterbore by forming a blind hole by milling or drilling, by drilling or punching The method of opening < forming a through hole, the step of forming a metal line on the circuit substrate means forming a step of forming a metal line by the inner lead connecting portion and the outer lead connecting portion 32 201044653. 9_ According to the patent application scope PD U 4 power coffee (four) heat sink substrate manufacturing method, wherein, Fung. And) by means of an etching process, mechanical processing, work or printing, to form a metal line on the circuit substrate. m 10. According to the application for the scope of the patent, the eighth cabinet%, +.,. Gudi 8 of the heat-emitting substrate manufacturing method for the power LED, wherein the boat step, step a) also includes the upper surface of the circuit substrate around the counterbore Forming an internal lead-in 洁 Ο and a 连接 line connection portion; forming a partial metal layer constituting the outer lead connection portion on the upper surface and the lower surface of the circuit substrate farther from the counterbore, and treating the part of the metal by metallization The side of the circuit substrate is formed with a metal layer connected to the portion of the octagonal metal layer to form an external lead connection portion; the inner lead connection portion metal layer and the outer lead connection portion metal layer are formed to electrically connect the product. The steps of the metal line. 11 · According to the patent scope of the patent, the heat dissipation substrate for the power LED of the first and second sides of the application is installed, wherein the step b) includes the step of electroplating the heat sink according to the scope of the patent scope The method of heat sink substrate for power coffee, wherein 'step b) comprises the steps of polishing and cleaning before heat sinking the ore. 13. The heat-dissipating substrate manufacturing method for the power lEd according to the second paragraph of the patent application scope' wherein the heat-conducting material used in the step b) is one of copper, brass, and alloy. 14. The heat-dissipating substrate 33 201044653 for the power lEd according to the second aspect of the patent application scope, the manufacturing method of the method, the step c) of assembling the heat sink into the counterbore is to The plastic type will form a strong heat sink in the sinking hole. 5. According to the manufacturing method of the power LED material heat sink substrate according to the first item of the patent scope, wherein b) (4) the upper step height of the heat sink is equal to or greater than The depth of the hole, the height of the lower step is equal to or greater than the depth of the blind hole, the upper and lower steps are coaxial or non-coaxial; a plane or a concave reflecting cup is prepared on the top of the upper step column; The top cross section of the step is slightly smaller than the bottom cross section thereof, such that the upper step is tapered, and the top cross section of the lower step of the heat sink is slightly smaller than the bottom cross section thereof, so that the lower step is tapered; the sink of the circuit substrate The cross section of the hole through hole is a circle, a square or a polygon, and the cross section of the blind hole is a circle. The method for manufacturing a heat-dissipating substrate for a power LED according to any one of claims 1 to 15, wherein the step &) comprises disposing a XN consisting of a plurality of counterbore on the circuit substrate. An array of columns, where Μ'Ν is an integer equal to or greater than 1, and Μ, Ν are at least equal to one at least. 17. The method of manufacturing a heat-dissipating substrate for power lED according to claim 16 wherein the step a) comprises the steps of: providing at least one dividing groove on the side of the at least one counterbore row or the counterbore row or Split the hole. The method for manufacturing a heat-dissipating substrate for a power LED according to claim 16 , wherein the step a) comprises the steps of: providing at least one dividing groove on each side of the counterbore row or each counterbore row or The dividing hole 34 201044653 corresponds to at least one dividing groove or dividing hole corresponding to each of the sinking holes or each of the sinking holes in each of the "L hole rows. 19. The method for manufacturing a heat-dissipating substrate according to the power of claim 17 or 18, wherein the step a) forming the metal circuit is performed by using a rotten process, mechanically, and recording. The utility model is characterized in that the inner lead connecting portion metal layer is formed on the upper surface of the circuit substrate around the counterbore, and the outer lead connecting portion is formed on the upper surface and the lower surface of the circuit substrate along the dividing groove or/and the hole a portion of the metal layer forms a metal layer connected to the metal layer of the upper surface and the lower surface of the circuit substrate by a metallization process on the sidewalls of the dividing groove or/and the dividing hole, and the metal layer collectively constitutes an external lead connecting portion. The outer lead connection portion metal layer and the inner lead connection portion metal layer constitute a metal line for electrically connecting the product. The method for manufacturing a heat dissipation substrate for a power LED according to claim 16, wherein the step of preparing the dividing groove or/and the dividing hole in the step a) is a punching, drilling or milling method. The method for manufacturing a heat-dissipating substrate for a power LED according to claim 16, wherein the step a) comprises forming a cutting positioning line at an end of the circuit substrate, and the cutting positioning line is disposed in the counterbore row or / and the ends of the counterbore column correspond to the side of the counterbore row or / and the counterbore column. The method for manufacturing a heat-dissipating substrate for a power LED according to claim 21, wherein the cutting positioning line is formed by one of an etching process, a machining process, a laser process or a printing process 35 201044653 23 A method of manufacturing a heat dissipation substrate for power lED according to claim 21, wherein the dividing groove or/and the dividing holes are arranged in alignment with an adjacent counterbore column or/and a counterbore row The counterbore is equally spaced; the cutting positioning line is disposed corresponding to an intermediate position between adjacent counterbore rows or/and countersink columns. The method for manufacturing a heat-dissipating substrate for a power LED according to any one of claims 17 to 19, wherein the dividing groove is a through groove penetrating a side of each of the counterbore rows, and each of the dividing grooves is located at each The middle position between the sinking lines. The method for manufacturing a heat-dissipating substrate for a power LED according to the above-mentioned claim, wherein the central axis of the divided hole row or the divided hole row and each of the counterbore rows or the counterbore columns are arranged. The cutting positioning lines set at both ends are collinear. 26. A method of manufacturing a power LED using a circuit substrate, comprising: a method of manufacturing a heat dissipation substrate for a power LED according to any one of claims 1 to 25, wherein the method of manufacturing a power LED using the circuit substrate comprises The following steps: 1) Select the following high temperature solid crystal mode or low temperature solid crystal mode to carry out the LED wafer bonding step: The high temperature solid crystal mode is: in step b), the LED wafer is dried in the heat by the still temperature solid crystal method. The method of low temperature solid crystal is: bonding the LED chip to the heat sink of the circuit substrate by the low temperature crystallizing method after the step c); and 2) the step of connecting the leads: connecting the wire after the step c) 36 201044653 The electrode of the LED chip and the metal line on the circuit substrate. 27. The method of manufacturing a power LED using a circuit substrate according to claim 26, wherein the low temperature solid crystal method uses a temperature lower than 260 C' to adhere the wafer with a solid crystal glue, a silver paste or a low temperature solder. The high temperature solid crystal method is used to bond the LED wafer to the heat sink by high temperature soldering, reflow soldering, eutectic or AnSn high temperature solid crystal bonding at a temperature higher than 26 〇〇c. 28. The method for manufacturing a power LED using a circuit substrate according to claim or claim 1, wherein the method comprises the steps of: encapsulating a gel, injecting a liquid encapsulant at a time; Filling the gap between the plastic mold and the circuit substrate, so that the liquid encapsulant forms an optical lens covering one side of the circuit substrate on which the LEd wafer is mounted; 2) curing v. curing the liquid encapsulant between the mold and the substrate '3) demoulding Step: Separating the cured mold from the circuit substrate, and the encapsulant is separated from the mold and fixed on the circuit substrate. 29. According to the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ And retain the external lead connections. 3〇. According to the application for a patent, the power of the circuit board manufacturing power as described in item 29, 'the package body is a package colloid material with good thermal stability and skin length attenuation, including stone. Xijiao, modified material based on Shixi knee, modified material based on epoxy resin. According to the application of the circuit board manufacturing power according to the item 28, the power of the circuit board manufacturing process 37 201044653 LED, wherein the package gel molding process temperature range is 60-220X:, the duration does not exceed % minutes. 32. According to the scope of the patent, please refer to the 28th paragraph of the patent scope for the manufacture of power LEDs. Among them, the temperature of the packaged molding process is 100-180 °C. The duration is 5_15. minute. 33. The method for manufacturing a power LED according to the Lilin Road substrate described in Item 28, wherein the method of the Chengshi and the t-hall includes a three-step hardening step of the encapsulating colloid after the encapsulation of the colloid molding package, and secondary hardening. The baking temperature is 150 ± 20 ° C 'bake time is 2.5-3.5 hours. 34. The method of using the circuit board to produce a k-force LED according to the scope of the patent application 帛 26 or 27, wherein the wire bonding step is to connect the electrode of the LED chip to the internal lead portion on the circuit substrate. Connection, electrical connection between the LED chip and the circuit substrate. 35. A method of manufacturing a power ED using a circuit substrate according to claim 28, wherein the optical lens formed by the encapsulant is a convex lens, a concave lens or a combined curved lens. A circuit board prepared by the method of manufacturing a heat dissipation substrate for a power LED according to any one of claims 1 to 25. A-type of the power and product prepared by the method of manufacturing a power LED using a circuit board as described in the section No. 26J_^ of the patent scope. 38. A light source' comprising a power LED as described in claim 57. 39. The light source of claim 38, wherein the light source is one of a surface light source, a strip light source, or a stand-alone device. 38