TWI566438B - Flip-chip light emitting dioxide packaging - Google Patents

Flip-chip light emitting dioxide packaging Download PDF

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Publication number
TWI566438B
TWI566438B TW103133024A TW103133024A TWI566438B TW I566438 B TWI566438 B TW I566438B TW 103133024 A TW103133024 A TW 103133024A TW 103133024 A TW103133024 A TW 103133024A TW I566438 B TWI566438 B TW I566438B
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electrode
substrate
flip
chip
package structure
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TW103133024A
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TW201611346A (en
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林厚德
張超雄
陳濱全
陳隆欣
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榮創能源科技股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09054—Raised area or protrusion of metal substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621—Components characterised by their electrical contacts
    • H05K2201/10674—Flip chip

Description

覆晶式發光二極體封裝結構 Flip-chip LED package structure

本發明涉及一種半導體發光元件，特別涉及一種覆晶式發光二極體封裝結構。 The present invention relates to a semiconductor light emitting device, and more particularly to a flip chip light emitting diode package structure.

發光二極體因具有生產成本低、結構簡單、低能耗低污染、體積小及容易安裝等優勢被大量用於照明光源及顯示技術中。 Light-emitting diodes are widely used in illumination sources and display technologies due to their low production cost, simple structure, low energy consumption, low pollution, small size and easy installation.

習知的覆晶式發光二極體包括依次堆疊設置的N型半導體層、發光層、P型半導體層及形成在覆晶式發光二極體形同一側並與N型半導體層及P型半導體層電連接的N電極及P電極。在覆晶式發光二極體封裝時，所述覆晶式發光二極體通過導電膠固定在基板上，並將覆晶式發光二極體電極與基板上對應電極連接。然而在通常情況下，因為導電膠會沿著導熱率大的N電極及P電極流動而使N電極與P電極之間虛焊而導致爬錫現象產生，進而導致N電極與P電極之間容易發生短路，使得覆晶式發光二極體結構不能正常工作，而且因爬錫而露出至覆晶式發光二極體外部的導電膠會吸收覆晶式發光二極體邊緣發出的光線，導致覆晶式發光二極體出光效率降低。 The conventional flip-chip light-emitting diode includes an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, and a same on the same side of the flip-chip light-emitting diode shape as the N-type semiconductor layer and the P-type semiconductor layer. Electrically connected N and P electrodes. In the flip-chip light-emitting diode package, the flip-chip light-emitting diode is fixed on the substrate by a conductive adhesive, and the flip-chip light-emitting diode electrode is connected to the corresponding electrode on the substrate. However, under normal circumstances, since the conductive adhesive flows along the N-electrode and the P-electrode having a large thermal conductivity, the N-electrode and the P-electrode are soldered to cause a phenomenon of creeping, thereby causing an easy relationship between the N-electrode and the P-electrode. A short circuit occurs, so that the flip-chip light-emitting diode structure cannot work normally, and the conductive adhesive exposed to the outside of the flip-chip light-emitting diode due to the creeping of the solder absorbs the light emitted from the edge of the flip-chip light-emitting diode, resulting in overlying The light-emitting diode has a reduced light extraction efficiency.

有鑑於此，有必要提供一種性能穩定出光效率高的覆晶式發光二極體封裝結構。 In view of the above, it is necessary to provide a flip-chip light-emitting diode package structure with stable performance and high light-emitting efficiency.

一種覆晶式發光二極體封裝結構，包括基板及位於基板上LED晶片，所述LED晶片包括P電極和N電極，所述基板中部形成有凸起，所述凸起包括相互絕緣的第一連接部及第二連接部，所述LED晶片的P電極及N電極分別貼設於所述第一連接部及第二連接部的頂面上且P電極及N電極的底面邊緣超出所述第一連接部及第二連接部的頂面邊緣，所述基板上還形成有反射杯，該反射杯包括底壁和側壁，所述底壁中部向上凸伸形成有圍繞所述凸起的凸環，所述凸環的頂面與所述凸起的頂面平齊，且不超出P電極及N電極的底面。 A flip-chip light emitting diode package structure comprising a substrate and an LED chip on the substrate, the LED chip comprising a P electrode and an N electrode, wherein the middle portion of the substrate is formed with a protrusion, and the protrusion comprises a first insulation a connecting portion and a second connecting portion, wherein the P electrode and the N electrode of the LED chip are respectively attached to the top surfaces of the first connecting portion and the second connecting portion, and the bottom edges of the P electrodes and the N electrodes are beyond the first portion a top surface of the connecting portion and the second connecting portion, a reflective cup is further formed on the substrate, the reflective cup includes a bottom wall and a side wall, and a central portion of the bottom wall protrudes upwardly to form a convex ring surrounding the protrusion The top surface of the convex ring is flush with the top surface of the protrusion and does not exceed the bottom surfaces of the P electrode and the N electrode.

本發明所述覆晶式發光二極體的封裝結構可以避免所述LED晶片封裝過程中導電膠爬錫而造成LED晶片短路，提升覆晶式發光二極體的穩定性及出光效率。 The package structure of the flip-chip light-emitting diode of the invention can avoid the short circuit of the LED chip caused by the conductive glue climbing in the LED chip packaging process, and improve the stability and light-emitting efficiency of the flip-chip light-emitting diode.

10‧‧‧基板 10‧‧‧Substrate

11‧‧‧第一基板 11‧‧‧First substrate

12‧‧‧第二基板 12‧‧‧second substrate

20‧‧‧反射杯 20‧‧‧Reflection Cup

21‧‧‧內壁 21‧‧‧ inner wall

22‧‧‧底壁 22‧‧‧ bottom wall

221‧‧‧凸環 221‧‧‧ convex ring

23‧‧‧突起 23‧‧‧ Protrusion

30‧‧‧LED晶片 30‧‧‧LED chip

31‧‧‧P電極 31‧‧‧P electrode

32‧‧‧N電極 32‧‧‧N electrode

40‧‧‧凸起 40‧‧‧ bumps

41‧‧‧第一連接部 41‧‧‧First connection

42‧‧‧第二連接部 42‧‧‧Second connection

50‧‧‧絕緣部 50‧‧‧Insulation

51‧‧‧主體部 51‧‧‧ Main body

52‧‧‧延伸部 52‧‧‧Extension

60‧‧‧導電膠 60‧‧‧ conductive adhesive

70‧‧‧封裝膠體 70‧‧‧Package colloid

圖1係本發明第一實施例中覆晶式發光二極體封裝結構剖視圖。 1 is a cross-sectional view showing a flip-chip type light emitting diode package structure in a first embodiment of the present invention.

圖2係圖1所示覆晶式發光二極體封裝基板的剖視圖。 2 is a cross-sectional view of the flip chip type LED package substrate shown in FIG. 1.

圖3係本發明第二實施例中覆晶式發光二極體的封裝結構的剖視圖。 3 is a cross-sectional view showing a package structure of a flip-chip type light emitting diode in a second embodiment of the present invention.

圖4係本發明第三實施例中覆晶式發光二極體的封裝結構的剖視圖。 4 is a cross-sectional view showing a package structure of a flip-chip type light emitting diode in a third embodiment of the present invention.

如圖1所示，本發明第一實施例中的覆晶式發光二極體封裝結構包括一基板10、位於基板10上的一反射杯20及設置在反射杯20底部的LED晶片30。 As shown in FIG. 1 , the flip-chip LED package structure in the first embodiment of the present invention includes a substrate 10 , a reflective cup 20 on the substrate 10 , and an LED chip 30 disposed on the bottom of the reflective cup 20 .

所述基板10由導熱性能及導電性能良好的金屬材料製成，呈平板狀。所述基板10中部形成有一凸起40。所述凸起40及基板10的縱截面均呈矩形。 The substrate 10 is made of a metal material having good thermal conductivity and electrical conductivity and has a flat shape. A protrusion 40 is formed in the middle of the substrate 10. The protrusions 40 and the substrate 10 have a rectangular cross section.

請同時參考圖2，所述反射杯20為中部內凹杯體，其具有高反射率的材料製成。所述反射杯20包括內壁21和底壁22。所述底壁22中部向上凸伸形成有圍繞所述凸起40的凸環221，所述凸環221的頂面與所述凸起40的頂面平齊，所述凸起40的頂面外露。所述反射杯20的外周緣與所述基板10的外側共面。 Referring to FIG. 2 at the same time, the reflector cup 20 is a central concave cup body made of a material having high reflectivity. The reflector cup 20 includes an inner wall 21 and a bottom wall 22. A convex ring 221 surrounding the protrusion 40 is formed in a middle portion of the bottom wall 22, and a top surface of the convex ring 221 is flush with a top surface of the protrusion 40, and a top surface of the protrusion 40 Exposed. The outer circumference of the reflector cup 20 is coplanar with the outer side of the substrate 10.

所述LED晶片30固定於所述凸起40頂面。在本實施例中所述的LED晶片30為覆晶式發光二極體結構。所述LED晶片30包括由金屬材質形成的一P電極31和一N電極32。所述LED晶片30通過導電膠60固定在於所述凸起40之上。 The LED chip 30 is fixed to the top surface of the protrusion 40. The LED chip 30 described in this embodiment is a flip chip type light emitting diode structure. The LED chip 30 includes a P electrode 31 and an N electrode 32 formed of a metal material. The LED wafer 30 is fixed over the bump 40 by a conductive paste 60.

所述凸起40的頂部表面積小於所述LED晶片30的P電極31和N電極32的底面積之和。 The top surface area of the bump 40 is smaller than the sum of the bottom areas of the P electrode 31 and the N electrode 32 of the LED wafer 30.

進一步的，一絕緣部50穿射在所述基板10中。所述絕緣部50由絕緣性能良好且具有反射作用的材料製成。絕緣部50自所述基板10底部延伸至所述凸起40頂面。所述絕緣部50具體包括一主體部51及自主體部51頂端延伸至所述凸起40頂面的一延伸部52。所述主體部51的寬度大於所述延伸部52的寬度，所述延伸部52的頂面與所述凸起40頂面平齊且外露。所述絕緣部50將所述基板10分隔為相互絕緣的一第一基板11和一第二基板12。所述絕緣部50將所述凸起40分隔為相互絕的一第一連接部41和一第二連接部42。所述第一連接部41與第一基板11連接並共同組成第一電極。所述第二連接部42與第二基板12連接並共同組成第二電極。所述第一連接 部41和第二連接部42外露出凸起40的上表面部分以連接LED晶片30的P電極31及N電極32。 Further, an insulating portion 50 is penetrated in the substrate 10. The insulating portion 50 is made of a material having good insulating properties and having a reflecting effect. The insulating portion 50 extends from the bottom of the substrate 10 to the top surface of the protrusion 40. The insulating portion 50 specifically includes a main body portion 51 and an extending portion 52 extending from a top end of the main body portion 51 to a top surface of the protrusion 40. The width of the main body portion 51 is larger than the width of the extending portion 52, and the top surface of the extending portion 52 is flush with the top surface of the protrusion 40 and exposed. The insulating portion 50 divides the substrate 10 into a first substrate 11 and a second substrate 12 that are insulated from each other. The insulating portion 50 divides the protrusion 40 into a first connecting portion 41 and a second connecting portion 42 which are mutually exclusive. The first connecting portion 41 is connected to the first substrate 11 and together constitutes a first electrode. The second connecting portion 42 is connected to the second substrate 12 and together constitutes a second electrode. The first connection The upper portion of the projection 40 is exposed outside the portion 41 and the second connecting portion 42 to connect the P electrode 31 and the N electrode 32 of the LED wafer 30.

在固晶過程中，先將LED晶片30固定於凸起40之上。所述LED晶片30的P電極31及N電極32通過導電膠60與第一連接部41或第二連接部42相連。因凸起40頂部表面積小於所述P電極31及N電極32底面積之和，因此所述P電極31及N電極32底部邊緣將超出所述凸起40的頂面邊緣。在本實施例中，由於所述凸環221為厚度很薄的一層反射材料，所述凸環221的頂部邊緣不超出P電極31及N電極32超出凸起40頂面邊緣的部分，也即所述P電極31及N電極32的底面邊緣也超出所述凸環221頂面邊緣。 In the die bonding process, the LED chip 30 is first fixed on the bump 40. The P electrode 31 and the N electrode 32 of the LED wafer 30 are connected to the first connection portion 41 or the second connection portion 42 through the conductive paste 60. Since the top surface area of the protrusion 40 is smaller than the sum of the bottom areas of the P electrode 31 and the N electrode 32, the bottom edges of the P electrode 31 and the N electrode 32 will exceed the top edge of the protrusion 40. In this embodiment, since the convex ring 221 is a thin reflective material, the top edge of the convex ring 221 does not exceed the portion of the P electrode 31 and the N electrode 32 beyond the top edge of the protrusion 40, that is, The bottom edges of the P electrodes 31 and the N electrodes 32 also extend beyond the top surface of the convex ring 221.

本實施例中，因基板10的中部設置有凸起40且LED晶片30與第一連接部41及第二連接部42接觸的P電極31及N電極32的邊界超出第一連接部41及第二連接部42的頂面邊界，所以通過導電膠60固定所述LED晶片30於凸起40時候，凸起40的邊緣可引導導電膠60在重力作用下沿其周緣往下流動從而使導電膠60填滿塗設於第一連接部41和第二連接部42與LED晶片30之間之外，溢出的導電膠60收容於凸起40週邊的凸環221處並與P電極31、N電極32接觸將其進一步固定。如此，避免了大量導電膠60因爬錫而造成LED晶片30的P電極31與N電極32發生短路。並且導電膠60流向凸環221處避免導電膠60包裹LED晶片30的週邊，從而提升出光效率。 In this embodiment, the boundary between the P electrode 31 and the N electrode 32 in which the protrusion 40 is disposed in the middle of the substrate 10 and the LED chip 30 is in contact with the first connection portion 41 and the second connection portion 42 exceeds the first connection portion 41 and the The top surface boundary of the connecting portion 42 is such that when the LED chip 30 is fixed to the bump 40 by the conductive adhesive 60, the edge of the bump 40 can guide the conductive adhesive 60 to flow downward along the circumference thereof under the action of gravity to make the conductive adhesive 60 is filled between the first connecting portion 41 and the second connecting portion 42 and the LED chip 30, and the overflow conductive adhesive 60 is received at the convex ring 221 around the protrusion 40 and with the P electrode 31 and the N electrode. 32 contacts further fix it. In this way, a large amount of the conductive paste 60 is prevented from being short-circuited between the P electrode 31 and the N electrode 32 of the LED wafer 30 due to the creeping of the tin. Moreover, the conductive adhesive 60 flows toward the convex ring 221 to prevent the conductive adhesive 60 from wrapping around the periphery of the LED chip 30, thereby improving light extraction efficiency.

如圖3所示，為本發明第二實施例所述覆晶式發光二極體的封裝結構，其與第一實施例中所述覆晶式發光二極體的封裝結構相似，其不同之處在於：所述反射杯20的內壁21上形成多個突起23，所述突起23的直徑相同且均勻的排列，可以理解的所述突起23直 徑不同且交錯排列於所述內壁21。這些突起23用於提升反射杯20的反射效率。 As shown in FIG. 3, the package structure of the flip-chip type light-emitting diode according to the second embodiment of the present invention is similar to the package structure of the flip-chip type light-emitting diode in the first embodiment, and the difference is different. In the inner wall 21 of the reflector cup 20, a plurality of protrusions 23 are formed, the protrusions 23 having the same diameter and uniform arrangement, and the protrusions 23 are understandable. The diameters are different and staggered on the inner wall 21. These protrusions 23 serve to enhance the reflection efficiency of the reflective cup 20.

如圖4所示，為本發明第三實施例所述覆晶式發光二極體的封裝結構，其與第一實施例中所述覆晶式發光二極體的封裝結構大體相同。其不同之處在於：所述反射杯20內填充有封裝膠體70，所述的封裝膠體70中包括有螢光粉。所述封裝膠體70覆蓋所述LED晶片30，用於保護所述LED晶片30免受如水汽、灰塵的侵害。 As shown in FIG. 4, the package structure of the flip-chip type light-emitting diode according to the third embodiment of the present invention is substantially the same as the package structure of the flip-chip type light-emitting diode according to the first embodiment. The difference is that the reflective cup 20 is filled with an encapsulant 70, and the encapsulant 70 includes phosphor powder. The encapsulant 70 covers the LED chip 30 for protecting the LED chip 30 from moisture, dust, and the like.

10‧‧‧基板 10‧‧‧Substrate

20‧‧‧反射杯 20‧‧‧Reflection Cup

30‧‧‧LED晶片 30‧‧‧LED chip

31‧‧‧P電極 31‧‧‧P electrode

32‧‧‧N電極 32‧‧‧N electrode

40‧‧‧凸起 40‧‧‧ bumps

50‧‧‧絕緣部 50‧‧‧Insulation

60‧‧‧導電膠 60‧‧‧ conductive adhesive

Claims (8)

一種覆晶式發光二極體封裝結構，包括基板及位於基板上LED晶片，所述LED晶片包括P電極和N電極，其改良在於：所述基板中部形成有凸起，所述凸起包括相互絕緣的第一連接部及第二連接部，所述LED晶片的P電極及N電極分別貼設於所述第一連接部及第二連接部的頂面上且P電極及N電極的底面邊緣超出所述第一連接部及第二連接部的頂面邊緣，所述基板上還形成有反射杯，該反射杯包括底壁和側壁，所述底壁中部向上凸伸形成有圍繞所述凸起的凸環，所述凸環的頂面與所述凸起的頂面平齊，且不超出P電極及N電極的底面。 A flip-chip light emitting diode package structure comprising a substrate and an LED chip on the substrate, the LED chip comprising a P electrode and an N electrode, wherein the improvement is that a protrusion is formed in a middle portion of the substrate, and the protrusion includes each other a first connecting portion and a second connecting portion of the insulating, wherein the P electrode and the N electrode of the LED chip are respectively attached to the top surfaces of the first connecting portion and the second connecting portion and the bottom edges of the P electrodes and the N electrodes Exceeding the top edge of the first connecting portion and the second connecting portion, a reflective cup is further formed on the substrate, the reflective cup includes a bottom wall and a sidewall, and a central portion of the bottom wall protrudes upward to form a surrounding The convex ring has a top surface flush with the top surface of the protrusion and does not exceed the bottom surfaces of the P electrode and the N electrode. 如申請專利範圍第1項所述覆晶式發光二極體封裝結構，其中：進一步包括絕緣體，所述絕緣體穿射於所述基板中，從而將所述凸起分割成相互絕緣的第一連接部及第二連接部。 The flip-chip LED package structure of claim 1, wherein: further comprising an insulator, the insulator penetrating in the substrate to divide the protrusion into a first connection insulated from each other And a second connection. 如申請專利範圍第2項所述覆晶式發光二極體封裝結構，其中：所述絕緣部將所述基板分割為相互絕緣的第一基板及第二基板。 The flip-chip type light emitting diode package structure according to claim 2, wherein the insulating portion divides the substrate into a first substrate and a second substrate that are insulated from each other. 如申請專利範圍第2項所述覆晶式發光二極體封裝結構，其中：所述絕緣部包括一主體部及位於主體部之上延伸至所述凸起的延伸部，所述主體部的寬度大於所述延伸部的寬度。 The flip-chip LED package structure of claim 2, wherein the insulating portion comprises a body portion and an extension portion extending over the body portion to the protrusion, the body portion The width is greater than the width of the extension. 如申請專利範圍第3項所述覆晶式發光二極體封裝結構，其中：所述第一基板與所述第一連接部共同組成第一電極，所述第二基板與第二連接部共同組成第二電極。 The flip-chip LED package structure of claim 3, wherein the first substrate and the first connecting portion together constitute a first electrode, and the second substrate and the second connecting portion are common A second electrode is formed. 如申請專利範圍第1項所述覆晶式發光二極體封裝結構，其中：所述反射杯由高反射率材料製成。 The flip-chip light emitting diode package structure according to claim 1, wherein the reflective cup is made of a high reflectivity material. 如申請專利範圍第1項所述覆晶式發光二極體封裝結構，其中：所述側壁 上形成多個凸起。 The flip-chip light emitting diode package structure according to claim 1, wherein: the sidewall A plurality of protrusions are formed on the upper surface. 如申請專利範圍第1項所述覆晶式發光二極體封裝結構，其中：所述反射杯內填充有封裝膠體，所述封裝膠體中包含有螢光粉。 The flip-chip light-emitting diode package structure of claim 1, wherein the reflective cup is filled with an encapsulant, and the encapsulant comprises a phosphor powder.
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