WO2010058823A1 - Substrat pour formation de film supraconducteur, matériau supraconducteur et procédé de fabrication de ceux-ci - Google Patents

Substrat pour formation de film supraconducteur, matériau supraconducteur et procédé de fabrication de ceux-ci Download PDF

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WO2010058823A1
WO2010058823A1 PCT/JP2009/069653 JP2009069653W WO2010058823A1 WO 2010058823 A1 WO2010058823 A1 WO 2010058823A1 JP 2009069653 W JP2009069653 W JP 2009069653W WO 2010058823 A1 WO2010058823 A1 WO 2010058823A1
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substrate
layer
forming
superconducting film
superconducting
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PCT/JP2009/069653
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English (en)
Japanese (ja)
Inventor
成紀 宮田
福島　弘之
礼二 栗木
顕 衣斐
正晃 吉積
晶雄 木下
山田　穣
塩原　融
竜視 吉田
加藤　丈晴
司 平山
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財団法人 国際超電導産業技術研究センター
古河電気工業株式会社
財団法人 ファインセラミックスセンター
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Priority to CN200980146380.7A priority Critical patent/CN102224552B/zh
Priority to EP09827604.1A priority patent/EP2360701B8/fr
Publication of WO2010058823A1 publication Critical patent/WO2010058823A1/fr
Priority to US13/112,463 priority patent/US8927461B2/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming superconductor layers
    • H10N60/0576—Processes for depositing or forming superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]

Definitions

  • the present invention relates to a substrate for forming a superconducting film used for producing an oxide superconducting wire by forming a superconducting film on a substrate, a superconducting wire having a superconducting film formed thereon, and a method for producing the same.
  • Patent Documents 1 to 6 Conventionally, many attempts to produce an oxide superconducting wire by forming a superconducting film on a substrate have been proposed (see, for example, Patent Documents 1 to 6).
  • RE rare earth element, also called 123-based or yttrium-based superconductor
  • the oxide superconducting wire with flexibility is one of the superconducting wires that are being actively researched and developed because of its high current characteristics, and it relates to power equipment using this wire. A number of prototypes have been produced.
  • the oxide superconductor has high current characteristics in the thin film state, but when the single crystal substrate is used, it cannot be bent, Processing to a length of several hundred meters is not realistic.
  • a wire rod having a multi-layered structure in which an oxide layer is formed and a superconducting layer is further added is the object of development.
  • the liquid nitrogen temperature (77 K) exceeds 10 6 A / cm 2
  • the liquid helium temperature (4.2 K) increases 10 7 A / cm 2 .
  • Japanese Patent No. 2614948 Japanese Patent No. 3251034 Japanese Patent No. 3532253 Japanese Patent No. 3771012 JP 2001-110255 A Japanese Patent Laid-Open No. 11-3620
  • peeling may occur between the formed films.
  • peeling may occur between the formed films.
  • each layer thickness of each layer is sufficiently large, element diffusion can be suppressed, but if the layer thickness is reduced, the effect of interdiffusion and interfacial reactions between layers cannot be ignored. .
  • the present invention has been made in view of the above circumstances, and a substrate for forming a superconducting film, a superconducting wire, and a production thereof, in which peeling does not occur between the formed films in the film forming process or the heat treatment after the film forming is completed. It aims to provide a method.
  • a first aspect of the present invention is a superconducting film comprising a base made of metal and an oxide layer mainly composed of chromium oxide formed directly on the base.
  • a deposition substrate is provided.
  • the substrate may include a Ni-based alloy or a Fe-based alloy.
  • the Ni-base alloy or the Fe-base alloy can contain 10 to 30% by mass of Cr.
  • the surface smoothness of the oxide layer is preferably 50 nm or less in terms of Ra.
  • the surface smoothness of the substrate is preferably 50 nm or less in terms of Ra.
  • the layer thickness of the oxide layer is preferably 10 to 300 nm.
  • An intermediate layer for forming a superconducting film can be formed on the oxide layer.
  • the intermediate layer can include Y 2 O 3 or Gd 2 Zr 2 O 7 .
  • the intermediate layer may include a lower layer containing Al 2 O 3 .
  • the surface smoothness of the intermediate layer can be set to 50 nm or less in terms of Ra.
  • the second aspect of the present invention provides a superconducting wire characterized by forming a superconducting layer on the superconducting film-forming substrate described above.
  • a method for manufacturing a substrate for forming a superconducting film comprising the step of forming an oxide layer mainly composed of chromium oxide directly on a base made of metal. .
  • a step of forming a chromium layer directly on a substrate made of metal and a step of oxidizing the chromium layer and forming an oxide layer mainly composed of chromium oxide on the upper surface of the substrate.
  • a method of manufacturing a substrate for forming a superconducting film is provided.
  • a fifth aspect of the present invention includes a step of applying an aqueous solution containing chromium on the upper surface of a base made of metal, and a step of forming an oxide layer mainly composed of chromium oxide on the upper surface of the base by heating.
  • a method of manufacturing a substrate for forming a superconducting film is provided.
  • An intermediate layer for forming a superconducting film can be formed on the oxide layer.
  • a method for manufacturing a substrate for forming a superconducting film comprising the step of forming an oxide layer mainly composed of chromium oxide.
  • the substrate may contain a Ni-based alloy or a Fe-based alloy.
  • the Ni-base alloy or the Fe-base alloy can contain 10 to 30% by mass of Cr.
  • the surface smoothness of the substrate can be 50 nm or less in Ra.
  • the surface smoothness of the intermediate layer can be set to 50 nm or less in terms of Ra.
  • the intermediate layer can include Y 2 O 3 or Gd 2 Zr 2 O 7 .
  • the intermediate layer may include a lower layer containing Al 2 O 3 .
  • the surface smoothness of the intermediate layer can be set to 50 nm or less in terms of Ra.
  • a seventh aspect of the present invention there is provided a step of forming an intermediate layer including an Al 2 O 3 layer as a lower layer on a substrate made of an alloy including Cr, and forming a superconducting film on the intermediate layer at a temperature of 750 ° C. or higher.
  • a method of manufacturing a superconducting wire characterized by comprising a step of forming an oxide layer mainly composed of chromium oxide between the substrate and the intermediate layer.
  • the present invention it is possible to provide a substrate for forming a superconducting film in which no separation occurs between the formed films in the film forming process or the heat treatment after the film formation, and a method for manufacturing the same.
  • an oxide superconducting wire having excellent superconducting characteristics and high reliability can be manufactured with high productivity and high speed at low cost using the substrate.
  • FIG. 6 is a diagram showing a peeling phenomenon observed when a GdBCO layer is formed at a high temperature of 750 ° C. or higher after sequentially forming a Y 2 O 3 layer, an IBAD-MgO layer, and an epitaxial MgO layer on a metal substrate .
  • FIG. 4 is a diagram showing a peeling phenomenon observed when a LaMnO 3 layer is formed at a high temperature after sequentially forming a Y 2 O 3 layer, an IBAD-MgO layer, and an epitaxial MgO layer on a metal substrate. It is a figure which shows an example of the result of having measured the EDX spectrum of the film
  • FIG. 5 is a diagram showing a result of exposing a sample formed on a metal substrate to a high-temperature environment, in which an oxygen annealing process is performed on a sample in which two layers of a Gd 2 Zr 2 O 7 layer and an IBAD-MgO layer are formed as intermediate layers The case where is given.
  • TEM sample transmission electron microscope
  • the present inventors have formed an oxide layer mainly composed of chromium between the deposited layers as a means for solving the peeling problem. I found it effective.
  • the present inventors will explain the route through which such knowledge has been obtained, and provide details of specific embodiments of the present invention.
  • peeling may occur between the formed films. Further, when a superconducting layer is formed on the intermediate layer and then subjected to a required heat treatment, similarly, peeling may occur between the formed films. Such a delamination phenomenon between layers is caused by the following causes.
  • FIG. 1 shows the separation observed when a Y 2 O 3 layer, an IBAD-MgO layer, and an epitaxial-MgO layer are sequentially formed on a metal substrate and then a GdBCO layer is formed at a high temperature of 750 ° C. or higher. Demonstrate the phenomenon. Further, in FIG. 2, it was observed when a LaMnO 3 layer was formed at a high temperature after three intermediate layers (Y 2 O 3 layer, IBAD-MgO layer, and epitaxial-MgO layer) were similarly formed. Demonstrates peeling phenomenon.
  • the light gray part is the part which has peeled and the peeling piece (white outline part in a figure) exists in some places.
  • the present inventors performed EDX spectrum measurement on the film surface in order to confirm at which stage of the process of forming the laminated structure the peeling as shown in FIGS. 1 and 2 occurs. An example of the result is shown in FIG.
  • EDX spectrum measurement is a technique for elemental analysis by detecting characteristic X-rays emitted, the presence or absence of specific elements in the region from 1 to several microns deep from the surface can be obtained by using this technique. Existence and location of elements can be confirmed.
  • the YDX signal is obtained from the EDX spectrum at the site where peeling occurs, but the Mg signal is not obtained, so it is determined that the IBAD-MgO layer is detached. be able to.
  • the present inventors considered that the cause of peeling was in the IBAD-MgO layer, and investigated in detail the changes occurring in the IBAD-MgO layer. Therefore, the present inventors prepared a sample in which the film forming process was stopped with an IBAD-MgO layer (that is, a sample in which the outermost layer is an IBAD-MgO layer), and exposed this to a high-temperature environment that caused peeling. Then, the IBAD-MgO surface was observed with a scanning electron microscope (SEM).
  • SEM scanning electron microscope
  • the delamination between the layers is not a crack of the IBAD-MgO layer but a crack of the metal substrate, and the crack of the metal substrate is caused by a reaction on the surface of the metal substrate. That is, it can be said that the cause of delamination is due to some interfacial reaction (for example, oxidation reaction) occurring on the surface of the metal substrate.
  • some interfacial reaction for example, oxidation reaction
  • Ni-based alloys and Fe-based alloys have markedly improved oxidation resistance characteristics by the addition of Cr element, and stainless steel and the like are typical ones. This is because an oxide layer (so-called passive layer) containing Cr element as a main component is formed near the surface.
  • the MgO layer when an MgO layer is formed on a Hastelloy substrate via an intermediate layer, the MgO layer may be peeled off. This peeling is known to have occurred in the MgO layer by EDX analysis, but it is assumed that the cause is not in the MgO layer but in the Hastelloy substrate, as described below.
  • the depth of the crack was found to be greater than or equal to the thickness of the MgO layer. did. For example, in the case of an MgO layer having a thickness of 10 nm or less, the crack depth was 100 nm.
  • the occurrence of peeling is caused by the fact that the surface of the Hastelloy substrate is oxidized, the local surface change from the metal state to the oxide causes a crack in the substrate surface, and / or the substrate surface is It is believed that these were the result of deformation and these resulted in large internal stresses throughout the upper film.
  • the IBAD-MgO layer is the thinnest layer, and the lower layer is in an amorphous or microcrystalline state, and the upper layer has a biaxially oriented structure and is almost completely crystallized. Since it hits the discontinuous interface of the structure, it is considered that stress due to cracks and / or deformation of the substrate surface is concentrated and has led to peeling.
  • the reason why the oxygen annealing treatment is effective in suppressing the peeling is that the “oxide layer mainly composed of chromium oxide” plays a role in preventing the oxidation of the surface of the Hastelloy substrate. This is thought to be the result of reduced occurrence.
  • the present inventors investigated whether or not the peeling phenomenon is suppressed even when Al 2 O 3 is formed directly on the metal substrate as a barrier layer for the purpose of preventing diffusion and preventing reaction.
  • FIG. 6 shows the result of cross-sectional observation using a transmission electron microscope (TEM) for a sample in which peeling was suppressed by providing the Al 2 O 3 layer.
  • TEM transmission electron microscope
  • FIG. 6A shows a transmission electron image
  • the superconducting layer (approximately 1 ⁇ m) occupies the upper two-thirds of the electron image.
  • a CeO 2 layer (approximately 500 nm) below, and the lower part corresponds to a metal substrate and an Al 2 O 3 —LaMnO 3 layer.
  • FIGS. 6 (b) and 6 (c) When EDX spectrum analysis was performed focusing on the structure near the surface of the metal substrate, distribution states of Al and Cr were obtained as shown in FIGS. 6 (b) and 6 (c).
  • FIG. 6B the bright portion shows the Al 2 O 3 layer
  • FIG. 6C a high Cr concentration is present between the Al 2 O 3 layer and the lowermost metal substrate. It can be seen that a remarkably strong signal is obtained.
  • the means of inserting an Al 2 O 3 layer between the substrate and the intermediate layer is also the formation of an oxide layer mainly composed of Cr by a subsequent high-temperature process at 750 ° C. or higher, for example, the formation of a superconducting film. It is understood that it is effective in preventing peeling.
  • the present invention is based on the above knowledge, and is characterized in that, in a superconducting film forming substrate provided with a metal substrate, an oxide layer mainly composed of chromium oxide is formed immediately above the metal substrate.
  • the metal substrate that forms the base of the substrate for forming a superconducting film preferably has good workability (particularly stretchability) and flexibility.
  • a metal substrate made of a Ni-based alloy or a Fe-based alloy is preferable.
  • the present inventors used a diffusion method to form an oxide layer mainly composed of chromium oxide on a metal substrate, as long as the oxide layer can be formed, the oxide layer is formed. The method is not limited to a specific method.
  • An oxide layer mainly composed of chromium oxide can be directly formed on a metal substrate by a method such as treatment with an acidic solution such as nitric acid or heating in an oxygen atmosphere.
  • a chromium layer can be formed as a first layer directly on a metal substrate that forms a base, and the chromium layer can be oxidized in a subsequent film forming step to form an oxide layer mainly composed of chromium oxide.
  • the intermediate layer is heated to 700 ° C. or less in an atmosphere containing oxygen, and chromium oxide is mainly formed between the metal substrate and the intermediate layer.
  • An oxide layer can also be formed.
  • the atmosphere containing oxygen may be air or an atmosphere containing 100% oxygen.
  • the heating temperature exceeds 700 ° C., the heating temperature is too high and surface smoothness may be deteriorated.
  • the Ni-based alloy and the Fe-based alloy preferably include 10 to 30% by mass of Cr.
  • Hastelloy (trade name), Inconel (trade name), Haynes alloy (trade name), MC alloy (trade name), and the like are preferable.
  • Hastelloy (trade name), Inconel (trade name), Haynes alloy (trade name), MC alloy (trade name), and the like are preferable.
  • stainless steel Incoloy (product) Name) is preferred.
  • the smoothness of the film surface greatly affects the smoothness of the film immediately above it, so that the surface is smooth and superconducting with excellent current characteristics.
  • substrate is important.
  • Ra 10 to 20 nm.
  • a metal substrate with Ra exceeding 20 nm may be used.
  • Ra is preferably 50 nm or less.
  • the layer thickness of the “oxide layer mainly composed of chromium oxide” formed immediately above the metal substrate is not particularly limited, but is preferably 10 to 300 nm. If the layer thickness is less than 10 nm, it is too thin to sufficiently exert the function of suppressing delamination. On the other hand, if it exceeds 300 nm, the chromium layer itself may be cracked or peeled off.
  • the “oxide layer mainly composed of chromium oxide” exists in the form of spinel type NiCr 2 O 4 or FeCr 2 O 4 .
  • This formula is a composition as an ideal equilibrium state, and in actuality, the atomic ratio is not an integer ratio.
  • the composition is, for example, Ni 1.2 Cr 1.8 O 3.9. Or (NiO) 1.2 (CrO 1.5 ) 1.8 .
  • NiCr 2 O 4 and FeCr 2 O 4 Ni (25.9wt %, 14.3at%), Cr (45.9wt%, 28. 6 at%), O (28.2 wt%, 57.1 at%), and FeCr 2 O 4 , Fe (24.9 wt%, 14.3 at%), Cr (46.5 wt%, 28.6 at%), O (28.6 wt%, 57.1 at%).
  • the “oxide layer mainly composed of chromium oxide” is expressed by the formula Cr w M ′ x M “ y ... O z (w, x, y, z are all positive numbers).
  • the Cr content w (atomic%) is the largest.
  • the surface smoothness of the oxide layer mainly composed of chromium oxide is preferably 50 nm or less in terms of Ra as in the case of the metal substrate directly therebelow.
  • an oxide superconducting wire in order to form a superconducting film having excellent current characteristics, all the crystal orientations of all the crystal grains to be formed are aligned on a metal substrate.
  • An intermediate layer having an axial orientation structure is formed. However, it may be oriented at the stage of the metal substrate.
  • an intermediate layer may be formed on the “oxide layer mainly composed of chromium oxide”.
  • the intermediate layer is preferably a layer made of Y 2 O 3 or Gd 2 Zr 2 O 7 .
  • the Y 2 O 3 layer and the Gd 2 Zr 2 O 7 layer function as a seed layer that promotes a biaxially oriented structure.
  • the surface smoothness of the intermediate layer is preferably 50 nm or less in terms of Ra value.
  • an oxide layer mainly composed of chromium oxide is formed between the base and the Al 2 O 3 layer.
  • Such an oxide layer mainly composed of chromium oxide is formed, for example, in a high-temperature process at 750 ° C. or higher when the superconducting layer is formed.
  • An oxide layer mainly composed of chromium oxide is formed between the substrate and the Al 2 O 3 layer by heating to 700 ° C. or higher in an oxygen atmosphere after forming the intermediate layer before forming the superconducting layer. It is also possible to form an oxide layer mainly composed of chromium oxide by this method.
  • Example 1 As the metal substrate, a Ni-based alloy substrate (Hastelloy, trademark: Ni-16Cr-15.6Mo-6Fe-4W-2Co) rolled into a tape shape having a width of 10 mm and a thickness of 100 ⁇ m was used.
  • This metal substrate is a heat-resistant alloy containing a Cr element because a high temperature treatment process of about 800 ° C. is included in a plurality of subsequent film forming steps.
  • a metal Cr layer is formed to a thickness of 50 nm directly on this Ni-based alloy substrate by ion beam sputtering, and subsequently, Gd 2 Zr, which is the first intermediate layer, is also used using ion beam sputtering.
  • Gd 2 Zr which is the first intermediate layer, is also used using ion beam sputtering.
  • a 2 O 7 layer was formed as a sample under the conditions shown in Table 1 below.
  • the sample was subjected to a heat treatment up to 500 ° C. under a 100% oxygen atmosphere and a pressure of 1 atm, and a cross section was observed with a TEM (transmission electron microscope). As a result, it was confirmed that an oxide layer mainly composed of chromium oxide having a thickness of about 50 nm was formed between the metal substrate and the intermediate layer.
  • the surface of the laminated structure was observed using an SEM and an optical microscope, but no separation was found.
  • the critical current value (Ic) was 200 A or more and the critical current density value (Jc) was 1.0 ⁇ with respect to a voltage reference of 1 ⁇ V / cm. It was also confirmed that high characteristics of 10 6 A / cm 2 or more were obtained.
  • the assist beam conditions in the IBAD process are 20-30 mA, 700-800V.
  • Film formation rate is the average rate in RTR.
  • CeO 2 was 5 m / h at 24 m / h
  • Al 2 O 3 was 7.6 m / h at 2 times.
  • Example 2 As the metal substrate, a Ni-based alloy substrate (Hastelloy, trademark: Ni-16Cr-15.6Mo-6Fe-4W-2Co) rolled into a tape shape having a width of 10 mm and a thickness of 100 ⁇ m was used.
  • This metal substrate is processed at a high temperature of about 800 ° C. in order to form an oxide layer mainly composed of chromium oxide by an oxygen annealing treatment after forming the intermediate layer, and in a plurality of subsequent film forming steps. Since the process is included, a heat-resistant Ni-based alloy containing Cr element is used.
  • the surface of the metal substrate was polished to a Ra value of 10 nm or less.
  • a Gd 2 Zr 2 O 7 layer which is an intermediate layer, was formed directly on the metal substrate by ion beam sputtering under the conditions shown in Table 1 above to prepare a sample. Since this Gd 2 Zr 2 O 7 layer functions as a seed layer that promotes the formation of the orientation structure of the IBAD-MgO layer to be formed in the next step, heating is performed to keep it in an amorphous or microcrystalline state. Absent.
  • the sample thus obtained was subjected to an oxygen annealing treatment at 500 ° C. in an atmosphere of 100% oxygen and 1 atm pressure. After that, the sample was processed with a focused ion beam and cross-sectional observation was performed using a TEM (transmission electron microscope). As a result, a contrast indicating a difference in composition or structure was obtained near the surface of the metal substrate. When the location was examined by EDX spectrum analysis, it was confirmed that an oxide layer mainly composed of chromium oxide having a thickness of 20 nm was formed.
  • an IBAD-MgO layer, a LaMnO 3 layer, and a CeO 2 layer were formed using ion beam sputtering, magnetron sputtering, and pulsed laser deposition, and finally pulsed laser deposition.
  • Example 3 As the metal substrate, a Ni-based alloy substrate (Hastelloy, trademark: Ni-16Cr-15.6Mo-6Fe-4W-2Co) rolled into a tape shape having a width of 10 mm and a thickness of 100 ⁇ m was used.
  • This metal substrate includes a high temperature process of about 800 ° C. in a plurality of subsequent film forming steps, and in order to form an oxide layer mainly composed of chromium oxide in this high temperature process, Cr It was set as the heat resistant alloy containing an element.
  • the surface of a metal base material was grind
  • Al 2 O 3 layer and an intermediate layer are formed directly on the Ni-based alloy substrate under the film formation conditions shown in Table 1 above, by ion beam sputtering, It formed by the pulse laser vapor deposition method.
  • Example 4 As the metal substrate, a Ni-based alloy substrate (Hastelloy, trademark: Ni-16Cr-15.6Mo-6Fe-4W-2Co) rolled into a tape shape having a width of 10 mm and a thickness of 100 ⁇ m was used. This metal substrate is subjected to a high-temperature process of about 800 ° C. in order to form an oxide layer mainly composed of chromium oxide by oxygen annealing treatment after the intermediate layer is formed, and in a plurality of subsequent film forming steps. Since it is contained, it was set as the heat resistant alloy containing Cr element. Moreover, in order to improve the characteristic as an orientation board
  • the sample thus obtained was subjected to an oxygen annealing treatment at 500 ° C. in an atmosphere of 100% oxygen and 1 atm pressure. After that, the sample was processed with a focused ion beam and cross-sectional observation was performed using a TEM (transmission electron microscope). As a result, a contrast indicating a difference in composition or structure was obtained near the surface of the metal substrate. When the location was examined by EDX spectrum analysis, it was confirmed that an oxide layer mainly composed of chromium oxide having a thickness of 50 nm was formed.
  • an IBAD-MgO layer, a LaMnO 3 layer, and a CeO 2 layer were formed using ion beam sputtering, magnetron sputtering, and pulsed laser deposition, and finally pulsed laser deposition.
  • a sample having a layer structure of GdBCO / Epi-MgO / IBAD-MgO / Y 2 O 3 / Ni base alloy was produced from the upper layer without performing heat treatment in an oxygen atmosphere after forming the intermediate layer.
  • This sample is subjected to a film formation process of a superconducting layer (GdBCO) that requires a film forming temperature condition of about 800 ° C., and as shown in FIG. It was confirmed that it became.
  • GdBCO superconducting layer
  • a sample having a structure of LaMnO 3 / Epi-MgO / IBAD-MgO / Y 2 O 3 / Ni base alloy was prepared without performing heat treatment in an oxygen atmosphere after forming the intermediate layer. Also for this sample, as shown in FIG. 2, it was confirmed that peeling was caused by exposure to a high temperature environment during LaMnO 3 film formation.
  • the present invention it is possible to provide a film formation substrate in which separation does not occur between the formed films in the film formation process or the heat treatment after film formation, and the substrate is used for superconductivity.
  • An oxide superconducting wire having excellent characteristics and high reliability can be manufactured at high speed and low cost with high productivity. Therefore, the present invention has high applicability in the oxide superconducting wire manufacturing industry.

Abstract

L'invention concerne un substrat pour formation de film supraconducteur comprenant une base métallique et, formée directement au-dessus de ce substrat, une couche d'oxyde d'une épaisseur comprise entre 10 et 300 nm, possédant des propriétés de rugosité de surface Ra inférieures ou égales à 50 nm, et principalement composée d'oxyde de chrome. L'invention concerne aussi un procédé de fabrication d'un substrat pour formation de film supraconducteur comprenant, directement sur une base métallique, une étape de formation d'une couche d'oxyde d'une épaisseur comprise entre 10 et 300 nm, possédant des propriétés de rugosité de surface Ra inférieures ou égales à 50 nm, et principalement composée d'oxyde de chrome.
PCT/JP2009/069653 2008-11-21 2009-11-19 Substrat pour formation de film supraconducteur, matériau supraconducteur et procédé de fabrication de ceux-ci WO2010058823A1 (fr)

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CN200980146380.7A CN102224552B (zh) 2008-11-21 2009-11-19 超导膜成膜用基板、超导线材和它们的制造方法
EP09827604.1A EP2360701B8 (fr) 2008-11-21 2009-11-19 Substrat pour formation de film supraconducteur, matériau supraconducteur et procédé de fabrication de ceux-ci
US13/112,463 US8927461B2 (en) 2008-11-21 2011-05-20 Substrate for fabricating superconductive film, superconductive wires and manufacturing method thereof

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JP2008297703A JP5448425B2 (ja) 2008-11-21 2008-11-21 超電導膜成膜用基板、超電導線材及びそれらの製造方法

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WO2012070631A1 (fr) * 2010-11-26 2012-05-31 古河電気工業株式会社 Matériau de fil supraconducteur et procédé de fabrication de matériau de fil supraconducteur
WO2013008851A1 (fr) * 2011-07-11 2013-01-17 古河電気工業株式会社 Couche mince supraconductrice et procédé de fabrication de couche mince supraconductrice
WO2013015328A1 (fr) * 2011-07-25 2013-01-31 古河電気工業株式会社 Matière de base pour film mince supraconducteur, film mince supraconducteur et procédé de fabrication de film mince supraconducteur
CN103069508A (zh) * 2011-06-30 2013-04-24 古河电气工业株式会社 超导薄膜用基材、超导薄膜以及超导薄膜用基材的制造方法
EP2506324A3 (fr) * 2011-03-31 2014-01-15 Korea Electrotechnology Research Institute Bande supraconducteur haute température

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EP2360701A4 (fr) 2014-08-13
EP2360701A1 (fr) 2011-08-24
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