WO2010013811A1 - 高速電荷転送フォトダイオード、ロックインピクセル及び固体撮像装置 - Google Patents

高速電荷転送フォトダイオード、ロックインピクセル及び固体撮像装置 Download PDF

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Publication number
WO2010013811A1
WO2010013811A1 PCT/JP2009/063676 JP2009063676W WO2010013811A1 WO 2010013811 A1 WO2010013811 A1 WO 2010013811A1 JP 2009063676 W JP2009063676 W JP 2009063676W WO 2010013811 A1 WO2010013811 A1 WO 2010013811A1
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WIPO (PCT)
Prior art keywords
charge transfer
pixel
lock
solid
imaging device
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Application number
PCT/JP2009/063676
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English (en)
French (fr)
Inventor
川人　祥二
裕章 竹下
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国立大学法人静岡大学
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Application filed by 国立大学法人静岡大学 filed Critical 国立大学法人静岡大学
Priority to US13/056,816 priority Critical patent/US8587709B2/en
Publication of WO2010013811A1 publication Critical patent/WO2010013811A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Light Receiving Elements (AREA)

Abstract

　電荷生成領域として機能する第１導電型半導体層（２０）と、この半導体層（２０）の上部の一部に選択的に埋め込まれ、電荷生成領域で生成された電荷の電荷転送領域として機能する第２導電型表面埋込領域（２１ａ）とを備え、半導体層（２０）の表面に平行な面内において定義された表面埋込領域（２１ａ）の特定方向を電荷の電荷転送方向とし、この電荷転送方向に対し垂直方向に測った表面埋込領域（２１ａ）の幅の変化、及び電荷転送方向に沿った表面埋込領域（２１ａ）の不純物密度分布の少なくとも一方が、電荷転送方向の電界分布を一定にするように設定されている高速電荷転送フォトダイオード、ロックインピクセル、固体撮像装置である。
PCT/JP2009/063676 2008-07-31 2009-07-31 高速電荷転送フォトダイオード、ロックインピクセル及び固体撮像装置 WO2010013811A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/056,816 US8587709B2 (en) 2008-07-31 2009-07-31 High-speed charge-transfer photodiode, a lock-in pixel, and a solid-state imaging device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008198872A JP5283216B2 (ja) 2008-07-31 2008-07-31 高速電荷転送フォトダイオード、ロックインピクセル及び固体撮像装置
JP2008-198872 2008-07-31

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Publication Number Publication Date
WO2010013811A1 true WO2010013811A1 (ja) 2010-02-04

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Country Status (3)

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US (1) US8587709B2 (ja)
JP (1) JP5283216B2 (ja)
WO (1) WO2010013811A1 (ja)

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WO2011065280A1 (ja) * 2009-11-24 2011-06-03 浜松ホトニクス株式会社 距離センサ及び距離画像センサ
US20110198481A1 (en) * 2010-02-12 2011-08-18 Samsung Electronics Co., Ltd. Image sensor and operating method
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WO2016157910A1 (ja) * 2015-03-31 2016-10-06 国立大学法人静岡大学 測長素子及び固体撮像装置

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JP6010425B2 (ja) 2012-10-26 2016-10-19 浜松ホトニクス株式会社 距離センサ及び距離画像センサ
CN106134182B (zh) 2014-03-31 2019-05-17 株式会社尼康 检测元件、锁定检测装置、基板及检测元件的制造方法
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JP6650668B2 (ja) 2014-12-16 2020-02-19 キヤノン株式会社 固体撮像装置
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JP6649216B2 (ja) * 2016-09-16 2020-02-19 株式会社東芝 半導体装置およびその製造方法
CN109791934B (zh) * 2016-09-21 2022-11-08 国立大学法人静冈大学 光电转换元件及固态摄像装置
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CN111448664B (zh) * 2017-12-09 2023-04-28 国立大学法人静冈大学 电荷调制元件和固态摄像装置
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US8587709B2 (en) 2013-11-19
US20110187908A1 (en) 2011-08-04
JP2010040594A (ja) 2010-02-18
JP5283216B2 (ja) 2013-09-04

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