WO2010013811A1 - 高速電荷転送フォトダイオード、ロックインピクセル及び固体撮像装置 - Google Patents
高速電荷転送フォトダイオード、ロックインピクセル及び固体撮像装置 Download PDFInfo
- Publication number
- WO2010013811A1 WO2010013811A1 PCT/JP2009/063676 JP2009063676W WO2010013811A1 WO 2010013811 A1 WO2010013811 A1 WO 2010013811A1 JP 2009063676 W JP2009063676 W JP 2009063676W WO 2010013811 A1 WO2010013811 A1 WO 2010013811A1
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- WIPO (PCT)
- Prior art keywords
- charge transfer
- pixel
- lock
- solid
- imaging device
- Prior art date
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- 238000003384 imaging method Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 230000005684 electric field Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
- Optical Radar Systems And Details Thereof (AREA)
Abstract
電荷生成領域として機能する第1導電型半導体層(20)と、この半導体層(20)の上部の一部に選択的に埋め込まれ、電荷生成領域で生成された電荷の電荷転送領域として機能する第2導電型表面埋込領域(21a)とを備え、半導体層(20)の表面に平行な面内において定義された表面埋込領域(21a)の特定方向を電荷の電荷転送方向とし、この電荷転送方向に対し垂直方向に測った表面埋込領域(21a)の幅の変化、及び電荷転送方向に沿った表面埋込領域(21a)の不純物密度分布の少なくとも一方が、電荷転送方向の電界分布を一定にするように設定されている高速電荷転送フォトダイオード、ロックインピクセル、固体撮像装置である。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/056,816 US8587709B2 (en) | 2008-07-31 | 2009-07-31 | High-speed charge-transfer photodiode, a lock-in pixel, and a solid-state imaging device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008198872A JP5283216B2 (ja) | 2008-07-31 | 2008-07-31 | 高速電荷転送フォトダイオード、ロックインピクセル及び固体撮像装置 |
JP2008-198872 | 2008-07-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010013811A1 true WO2010013811A1 (ja) | 2010-02-04 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2009/063676 WO2010013811A1 (ja) | 2008-07-31 | 2009-07-31 | 高速電荷転送フォトダイオード、ロックインピクセル及び固体撮像装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8587709B2 (ja) |
JP (1) | JP5283216B2 (ja) |
WO (1) | WO2010013811A1 (ja) |
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WO2011065286A1 (ja) * | 2009-11-24 | 2011-06-03 | 浜松ホトニクス株式会社 | 距離センサ及び距離画像センサ |
WO2011065280A1 (ja) * | 2009-11-24 | 2011-06-03 | 浜松ホトニクス株式会社 | 距離センサ及び距離画像センサ |
US20110198481A1 (en) * | 2010-02-12 | 2011-08-18 | Samsung Electronics Co., Ltd. | Image sensor and operating method |
CN102208427A (zh) * | 2010-03-31 | 2011-10-05 | 索尼公司 | 固体摄像器件、用于制造固体摄像器件的方法和电子设备 |
EP2739037A1 (en) * | 2011-07-29 | 2014-06-04 | National University Corporation Shizuoka University | Solid state image pick-up device, and pixel |
WO2016157910A1 (ja) * | 2015-03-31 | 2016-10-06 | 国立大学法人静岡大学 | 測長素子及び固体撮像装置 |
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JPWO2016157910A1 (ja) * | 2015-03-31 | 2018-02-15 | 国立大学法人静岡大学 | 測長素子及び固体撮像装置 |
US10325953B2 (en) | 2015-03-31 | 2019-06-18 | National University Corporation Shizuoka University | Range sensor and solid-state imaging device |
Also Published As
Publication number | Publication date |
---|---|
US20110187908A1 (en) | 2011-08-04 |
JP5283216B2 (ja) | 2013-09-04 |
US8587709B2 (en) | 2013-11-19 |
JP2010040594A (ja) | 2010-02-18 |
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