WO2009078112A1 - 演算増幅器，パイプライン型ａｄ変換器 - Google Patents

演算増幅器，パイプライン型ａｄ変換器 Download PDF

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Publication number
WO2009078112A1
WO2009078112A1 PCT/JP2008/002041 JP2008002041W WO2009078112A1 WO 2009078112 A1 WO2009078112 A1 WO 2009078112A1 JP 2008002041 W JP2008002041 W JP 2008002041W WO 2009078112 A1 WO2009078112 A1 WO 2009078112A1
Authority
WO
WIPO (PCT)
Prior art keywords
mldr
transistor
gate electrode
electrically connects
node receiving
Prior art date
Application number
PCT/JP2008/002041
Other languages
English (en)
French (fr)
Inventor
Daisuke Nomasaki
Koji Oka
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to US12/445,003 priority Critical patent/US7940121B2/en
Priority to CN2008800127772A priority patent/CN101669282B/zh
Priority to JP2009501768A priority patent/JPWO2009078112A1/ja
Publication of WO2009078112A1 publication Critical patent/WO2009078112A1/ja
Priority to US13/079,259 priority patent/US20110175759A1/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/34—Analogue value compared with reference values
    • H03M1/38—Analogue value compared with reference values sequentially only, e.g. successive approximation type
    • H03M1/44—Sequential comparisons in series-connected stages with change in value of analogue signal
    • H03M1/442—Sequential comparisons in series-connected stages with change in value of analogue signal using switched capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H01L27/0811—MIS diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45352—Indexing scheme relating to differential amplifiers the AAC comprising a combination of a plurality of transistors, e.g. Darlington coupled transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45371—Indexing scheme relating to differential amplifiers the AAC comprising parallel coupled multiple transistors at their source and gate and drain or at their base and emitter and collector, e.g. in a cascode dif amp, only those forming the composite common source transistor or the composite common emitter transistor respectively
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45486—Indexing scheme relating to differential amplifiers the CSC comprising two or more paralleled transistors as current source
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/06—Continuously compensating for, or preventing, undesired influence of physical parameters
    • H03M1/0617—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence
    • H03M1/0675—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy
    • H03M1/0678—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy using additional components or elements, e.g. dummy components
    • H03M1/068—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy using additional components or elements, e.g. dummy components the original and additional components or elements being complementary to each other, e.g. CMOS
    • H03M1/0682—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy using additional components or elements, e.g. dummy components the original and additional components or elements being complementary to each other, e.g. CMOS using a differential network structure, i.e. symmetrical with respect to ground
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/06—Continuously compensating for, or preventing, undesired influence of physical parameters
    • H03M1/0617—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence
    • H03M1/0675—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy
    • H03M1/069—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy by range overlap between successive stages or steps
    • H03M1/0695—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence using redundancy by range overlap between successive stages or steps using less than the maximum number of output states per stage or step, e.g. 1.5 per stage or less than 1.5 bit per stage type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Amplifiers (AREA)
  • Analogue/Digital Conversion (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

　差動電圧配線(W101a)は、差動トランジスタ(T101a,T101a,…)のうち使用するトランジスタのゲート電極を入力電圧(Vinn)を受ける入力ノードに電気的に接続し、差動電圧配線(W101b)は、差動トランジスタ(T101b,T101b,…)のうち使用するトランジスタのゲート電極を入力電圧(Vinp)を受ける入力ノードに電気的に接続する。バイアス電圧配線(W102)は、電流源トランジスタ(T102,T102,…)のうち使用するトランジスタのゲート電極をバイアス電圧(VBN)を受けるバイアスノードに電気的に接続し、バイアス電圧配線(W103)は、負荷トランジスタ(T103a,T103a,…,T103b,T103b,…)のうち使用するトランジスタのゲート電極をバイアス電圧(VBP)を受けるバイアスノードに電気的に接続する。
PCT/JP2008/002041 2007-12-19 2008-07-30 演算増幅器，パイプライン型ａｄ変換器 WO2009078112A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/445,003 US7940121B2 (en) 2007-12-19 2008-07-30 Operational amplifier and pipeline AD converter
CN2008800127772A CN101669282B (zh) 2007-12-19 2008-07-30 运算放大器、管线型ad转换器
JP2009501768A JPWO2009078112A1 (ja) 2007-12-19 2008-07-30 演算増幅器，パイプライン型ａｄ変換器
US13/079,259 US20110175759A1 (en) 2007-12-19 2011-04-04 Operational amplifier and pipeline ad converter

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-327943 2007-12-19
JP2007327943 2007-12-19

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/079,259 Division US20110175759A1 (en) 2007-12-19 2011-04-04 Operational amplifier and pipeline ad converter

Publications (1)

Publication Number Publication Date
WO2009078112A1 true WO2009078112A1 (ja) 2009-06-25

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PCT/JP2008/002041 WO2009078112A1 (ja) 2007-12-19 2008-07-30 演算増幅器，パイプライン型ａｄ変換器

Country Status (4)

Country Link
US (2) US7940121B2 (ja)
JP (1) JPWO2009078112A1 (ja)
CN (1) CN101669282B (ja)
WO (1) WO2009078112A1 (ja)

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JP2011222631A (ja) * 2010-04-06 2011-11-04 Canon Inc 固体撮像装置

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US8274179B2 (en) * 2009-03-20 2012-09-25 Qualcomm Incorporated Passive differential voltage doubler
US9755599B2 (en) * 2015-09-17 2017-09-05 Qualcomm Incorporated Amplifier with boosted peaking

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JPS5967704A (ja) * 1982-10-07 1984-04-17 Seiko Instr & Electronics Ltd Ｍｏｓｆｅｔ演算増幅器
JPH0260311A (ja) * 1988-08-26 1990-02-28 Nec Corp 差動増幅回路
JPH07202700A (ja) * 1993-12-28 1995-08-04 Nec Corp Ａ／ｄ変換装置
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JPS5967704A (ja) * 1982-10-07 1984-04-17 Seiko Instr & Electronics Ltd Ｍｏｓｆｅｔ演算増幅器
JPH0260311A (ja) * 1988-08-26 1990-02-28 Nec Corp 差動増幅回路
JP2542928Y2 (ja) * 1989-10-27 1997-07-30 日本電気アイシーマイコンシステム株式会社 マスタスライス半導体装置
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011222631A (ja) * 2010-04-06 2011-11-04 Canon Inc 固体撮像装置

Also Published As

Publication number Publication date
US20110175759A1 (en) 2011-07-21
CN101669282B (zh) 2012-07-25
CN101669282A (zh) 2010-03-10
US7940121B2 (en) 2011-05-10
US20100188151A1 (en) 2010-07-29
JPWO2009078112A1 (ja) 2011-04-28

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