DE60323751D1 - CMOS-Verstärker mit stufenförmig veränderlicher Verstärkung - Google Patents

CMOS-Verstärker mit stufenförmig veränderlicher Verstärkung

Info

Publication number
DE60323751D1
DE60323751D1 DE60323751T DE60323751T DE60323751D1 DE 60323751 D1 DE60323751 D1 DE 60323751D1 DE 60323751 T DE60323751 T DE 60323751T DE 60323751 T DE60323751 T DE 60323751T DE 60323751 D1 DE60323751 D1 DE 60323751D1
Authority
DE
Germany
Prior art keywords
variable gain
cmos amplifier
cmos
amplifier
gain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60323751T
Other languages
English (en)
Inventor
Marco Gaeta
Giacomino Bollati
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE60323751D1 publication Critical patent/DE60323751D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183Long tailed pairs
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3211Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45479Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45484Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with bipolar transistors as the active amplifying circuit
    • H03F3/45596Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with bipolar transistors as the active amplifying circuit by offset reduction
    • H03F3/45618Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with bipolar transistors as the active amplifying circuit by offset reduction by using balancing means
    • H03F3/45623Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with bipolar transistors as the active amplifying circuit by offset reduction by using balancing means using switching means
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Control Of Amplification And Gain Control (AREA)
DE60323751T 2003-09-11 2003-09-11 CMOS-Verstärker mit stufenförmig veränderlicher Verstärkung Expired - Lifetime DE60323751D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03425589A EP1515431B1 (de) 2003-09-11 2003-09-11 CMOS-Verstärker mit stufenförmig veränderlicher Verstärkung

Publications (1)

Publication Number Publication Date
DE60323751D1 true DE60323751D1 (de) 2008-11-06

Family

ID=34130431

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60323751T Expired - Lifetime DE60323751D1 (de) 2003-09-11 2003-09-11 CMOS-Verstärker mit stufenförmig veränderlicher Verstärkung

Country Status (3)

Country Link
US (1) US7078968B2 (de)
EP (1) EP1515431B1 (de)
DE (1) DE60323751D1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006109105A (ja) * 2004-10-05 2006-04-20 Nec Electronics Corp 半導体集積回路及びその制御方法
US7446608B2 (en) * 2006-02-16 2008-11-04 Honeywell Inernational Inc. Variable gain amplifier with constant input referred third order intercept
US7551029B2 (en) * 2006-03-10 2009-06-23 Broadcom Corporation Transconductance stage providing gain control
KR100852186B1 (ko) 2006-11-02 2008-08-13 삼성전자주식회사 광 대역 프로그래머블 가변 이득 증폭기 및 그를 포함하는무선 수신기
US8035447B2 (en) * 2007-08-21 2011-10-11 Qualcomm, Incorporated Active circuits with load linearization
JPWO2009078112A1 (ja) * 2007-12-19 2011-04-28 パナソニック株式会社 演算増幅器,パイプライン型ad変換器
US7741916B2 (en) * 2008-02-15 2010-06-22 Texas Instruments Incorporated Reconfigurable circuit to compensate for a low noise amplification input matching variation and a method for its configuration
JP2009284050A (ja) * 2008-05-20 2009-12-03 Nec Electronics Corp 差動増幅回路
EP2351216B1 (de) * 2008-10-24 2015-07-01 Saab AB Schaltung mit mindestens einer ersten transistorgruppe und einer zweiten transistorgruppe
KR101562898B1 (ko) * 2008-12-31 2015-10-23 주식회사 동부하이텍 Op 앰프
JP2010213042A (ja) * 2009-03-11 2010-09-24 Renesas Electronics Corp 増幅回路及びアナログ/デジタル変換回路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2671244B1 (fr) * 1990-12-27 1993-03-05 Bull Sa Dispositif de retard reglable.
US5812005A (en) * 1996-07-30 1998-09-22 Dallas Semiconductor Corp. Auto zero circuitry and associated method
US6396339B1 (en) * 2000-06-28 2002-05-28 Texas Instruments Incorporated Operational amplifier trim method with process and temperature error compensation
US6980051B2 (en) * 2001-05-08 2005-12-27 Nokia Corporation Gain adjusting and circuit arrangement
DE10143770B4 (de) * 2001-09-06 2006-03-16 Infineon Technologies Ag Verstärkerschaltung
US6429690B1 (en) * 2001-11-02 2002-08-06 International Business Machines Corporation Programmable linear transconductor circuit

Also Published As

Publication number Publication date
US7078968B2 (en) 2006-07-18
US20050057306A1 (en) 2005-03-17
EP1515431A1 (de) 2005-03-16
EP1515431B1 (de) 2008-09-24

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Legal Events

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8364 No opposition during term of opposition