DE602006021150D1 - Monolithisch integrierte leistungsverstärkereinrichtung - Google Patents
Monolithisch integrierte leistungsverstärkereinrichtungInfo
- Publication number
- DE602006021150D1 DE602006021150D1 DE602006021150T DE602006021150T DE602006021150D1 DE 602006021150 D1 DE602006021150 D1 DE 602006021150D1 DE 602006021150 T DE602006021150 T DE 602006021150T DE 602006021150 T DE602006021150 T DE 602006021150T DE 602006021150 D1 DE602006021150 D1 DE 602006021150D1
- Authority
- DE
- Germany
- Prior art keywords
- power amplifier
- integrated power
- monolithically integrated
- monolithically
- amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0500452A SE528473C2 (sv) | 2005-02-28 | 2005-02-28 | Monolitiskt integrerad effektförstärkaranordning |
PCT/EP2006/000738 WO2006089614A1 (en) | 2005-02-28 | 2006-01-27 | Monolithically integrated power amplifier device |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602006021150D1 true DE602006021150D1 (de) | 2011-05-19 |
Family
ID=36226433
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602006021150T Active DE602006021150D1 (de) | 2005-02-28 | 2006-01-27 | Monolithisch integrierte leistungsverstärkereinrichtung |
Country Status (7)
Country | Link |
---|---|
US (1) | US7330077B2 (de) |
EP (1) | EP1854207B1 (de) |
KR (1) | KR100816904B1 (de) |
CN (1) | CN100492884C (de) |
DE (1) | DE602006021150D1 (de) |
SE (1) | SE528473C2 (de) |
WO (1) | WO2006089614A1 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7609115B2 (en) * | 2007-09-07 | 2009-10-27 | Raytheon Company | Input circuitry for transistor power amplifier and method for designing such circuitry |
US7973684B2 (en) * | 2008-10-27 | 2011-07-05 | Microchip Technology Incorporated | Self auto-calibration of analog circuits in a mixed signal integrated circuit device |
EP2425527B1 (de) * | 2009-04-30 | 2013-12-25 | Freescale Semiconductor, Inc. | Drahtlose kommunikationseinrichtung und halbleiterkapselungseinrichtung mit einem leistungsverstärker dafür |
CN102281220B (zh) | 2010-06-12 | 2015-04-29 | 华为技术有限公司 | 数据流处理方法、设备及系统 |
CN102339336A (zh) * | 2010-07-22 | 2012-02-01 | 沈阳中科微电子有限公司 | 改善微波/射频功率放大器芯片热失效的设计方法 |
CN102130657A (zh) * | 2010-09-14 | 2011-07-20 | 华为技术有限公司 | 一种功率放大器、不对称达赫笛功率放大设备和基站 |
JP5599364B2 (ja) * | 2011-05-06 | 2014-10-01 | 三菱電機株式会社 | ドハティ増幅器 |
CN103259494A (zh) * | 2012-02-16 | 2013-08-21 | 京信通信系统(中国)有限公司 | 一种功率放大器 |
US8928411B2 (en) | 2012-12-31 | 2015-01-06 | Silicon Image, Inc. | Integration of signal sampling within transistor amplifier stage |
CN104065351B (zh) * | 2013-03-18 | 2017-02-22 | 宋胜君 | 一种基于单片集成电路的功率放大器 |
KR101729653B1 (ko) | 2013-12-30 | 2017-04-25 | 한국전자통신연구원 | 질화물 반도체 소자 |
CN108370235B (zh) * | 2015-12-17 | 2021-09-07 | 瑞士优北罗股份有限公司 | 功率放大器装置、包络跟踪放大器装置和放大信号的方法 |
EP3951871A4 (de) * | 2019-04-01 | 2022-05-11 | Nuvoton Technology Corporation Japan | Monolithisches halbleiterbauelement und hybrides halbleiterbauelement |
US11108361B2 (en) | 2019-08-15 | 2021-08-31 | Nxp Usa, Inc. | Integrated multiple-path power amplifier with interdigitated transistors |
US11417644B2 (en) * | 2020-06-17 | 2022-08-16 | Macom Technology Solutions Holdings, Inc. | Integration of multiple discrete GaN devices |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4939485A (en) * | 1988-12-09 | 1990-07-03 | Varian Associates, Inc. | Microwave field effect switch |
US5420541A (en) * | 1993-06-04 | 1995-05-30 | Raytheon Company | Microwave doherty amplifier |
US5757229A (en) * | 1996-06-28 | 1998-05-26 | Motorola, Inc. | Bias circuit for a power amplifier |
JPH11261351A (ja) * | 1998-03-09 | 1999-09-24 | Matsushita Electric Ind Co Ltd | 電力増幅器mmic |
JP2001068556A (ja) * | 1999-08-30 | 2001-03-16 | Mobile Communications Tokyo Inc | 高周波電力増幅用半導体装置 |
SE522892C2 (sv) * | 1999-09-28 | 2004-03-16 | Ericsson Telefon Ab L M | En förstärkarkrets för att förstärka signaler |
WO2002025810A2 (en) | 2000-09-22 | 2002-03-28 | U.S. Monolithics, L.L.C. | Mmic folded power amplifier |
US6362689B1 (en) | 2000-09-22 | 2002-03-26 | U.S. Monolithics, L.L.C. | MMIC folded power amplifier |
-
2005
- 2005-02-28 SE SE0500452A patent/SE528473C2/sv not_active IP Right Cessation
-
2006
- 2006-01-27 KR KR1020067025883A patent/KR100816904B1/ko active IP Right Grant
- 2006-01-27 EP EP06703879A patent/EP1854207B1/de active Active
- 2006-01-27 CN CNB2006800001845A patent/CN100492884C/zh active Active
- 2006-01-27 WO PCT/EP2006/000738 patent/WO2006089614A1/en active Application Filing
- 2006-01-27 DE DE602006021150T patent/DE602006021150D1/de active Active
- 2006-11-28 US US11/605,211 patent/US7330077B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2006089614A1 (en) | 2006-08-31 |
KR20070088307A (ko) | 2007-08-29 |
CN100492884C (zh) | 2009-05-27 |
EP1854207A1 (de) | 2007-11-14 |
US20070146079A1 (en) | 2007-06-28 |
SE528473C2 (sv) | 2006-11-21 |
CN1954488A (zh) | 2007-04-25 |
EP1854207B1 (de) | 2011-04-06 |
KR100816904B1 (ko) | 2008-03-25 |
US7330077B2 (en) | 2008-02-12 |
SE0500452L (sv) | 2006-08-29 |
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