WO2009075163A1 - 成膜用マスク及びマスク密着方法 - Google Patents

成膜用マスク及びマスク密着方法 Download PDF

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Publication number
WO2009075163A1
WO2009075163A1 PCT/JP2008/070815 JP2008070815W WO2009075163A1 WO 2009075163 A1 WO2009075163 A1 WO 2009075163A1 JP 2008070815 W JP2008070815 W JP 2008070815W WO 2009075163 A1 WO2009075163 A1 WO 2009075163A1
Authority
WO
WIPO (PCT)
Prior art keywords
mask
pair
film forming
sides
main body
Prior art date
Application number
PCT/JP2008/070815
Other languages
English (en)
French (fr)
Inventor
Yoshinari Kondo
Kentaro Suzuki
Eichi Matsumoto
Yoshihiro Kobayashi
Kiichiro Ishikawa
Original Assignee
Tokki Corporation
Kyushu Hitachi Maxell, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokki Corporation, Kyushu Hitachi Maxell, Ltd. filed Critical Tokki Corporation
Priority to US12/808,026 priority Critical patent/US20100260938A1/en
Priority to CN2008801205571A priority patent/CN101896635B/zh
Priority to KR1020107015382A priority patent/KR101493119B1/ko
Publication of WO2009075163A1 publication Critical patent/WO2009075163A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photovoltaic Devices (AREA)

Abstract

　基板と良好に密着して成膜パターン精度の良い成膜を可能とした極めて実用性に秀れた成膜用マスク及びマスク密着方法の提供。成膜材料の通過を許容する開口パターンを有するマスク本体１と、このマスク本体１を保持する保持フレーム２とから成り、前記開口パターンを介して前記成膜材料が付着せしめられる基板６が積層される成膜用マスクであって、前記保持フレーム２は、前記マスク本体１の４辺のうち対向する一対の辺部３に沿って夫々配設されこの一対の辺部３を夫々保持する一対の保持部４を備え、この一対の保持部４によってのみ前記マスク本体１を保持するように構成し、前記一対の保持部４によって保持される前記一対の辺部３間で前記マスク本体１が自重によって撓み且つこの一対の辺部３の対向方向で前記撓み量が変化するようにこの一対の辺部３を前記一対の保持部４に固定する。
PCT/JP2008/070815 2007-12-13 2008-11-14 成膜用マスク及びマスク密着方法 WO2009075163A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/808,026 US20100260938A1 (en) 2007-12-13 2008-11-14 Mask for film formation and mask-affixing method
CN2008801205571A CN101896635B (zh) 2007-12-13 2008-11-14 成膜用掩模和掩模密合方法
KR1020107015382A KR101493119B1 (ko) 2007-12-13 2008-11-14 성막용 마스크 및 마스크 밀착방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007322422A JP5258278B2 (ja) 2007-12-13 2007-12-13 成膜用マスク及びマスク密着方法
JP2007-322422 2007-12-13

Publications (1)

Publication Number Publication Date
WO2009075163A1 true WO2009075163A1 (ja) 2009-06-18

Family

ID=40755406

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/070815 WO2009075163A1 (ja) 2007-12-13 2008-11-14 成膜用マスク及びマスク密着方法

Country Status (6)

Country Link
US (1) US20100260938A1 (ja)
JP (1) JP5258278B2 (ja)
KR (1) KR101493119B1 (ja)
CN (1) CN101896635B (ja)
TW (1) TW200938642A (ja)
WO (1) WO2009075163A1 (ja)

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CN105026051A (zh) * 2013-02-26 2015-11-04 东丽工程株式会社 基板处理装置、掩模设置方法、膜形成装置及膜形成方法
US9656290B1 (en) * 2013-07-05 2017-05-23 Massachusetts Institute Of Technology Stencil masks for making conformable electromagnetic device structures
TWI480399B (zh) * 2013-07-09 2015-04-11 金屬遮罩
CN104749902B (zh) * 2013-12-31 2017-02-15 上海微电子装备有限公司 掩模板面型整形装置
CN103834921B (zh) * 2014-02-28 2016-05-18 上海和辉光电有限公司 一种蒸发源挡板结构
CN104561895B (zh) * 2014-12-25 2017-03-22 昆山国显光电有限公司 一种复合掩膜板及其制作方法
TWI579640B (zh) * 2015-10-15 2017-04-21 許銘案 薄膜光罩、貼合輔具、貼合與曝光輔助裝置及將一薄膜光罩貼合於一曲面基板的方法
CN108779553B (zh) * 2016-03-23 2021-04-06 鸿海精密工业股份有限公司 蒸镀掩膜及其制造方法、有机半导体元件的制造方法
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JPS5665980A (en) * 1979-11-05 1981-06-04 Hitachi Ltd Vacuum deposition device
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Also Published As

Publication number Publication date
KR20100114883A (ko) 2010-10-26
JP5258278B2 (ja) 2013-08-07
KR101493119B1 (ko) 2015-02-12
US20100260938A1 (en) 2010-10-14
TW200938642A (en) 2009-09-16
JP2009144195A (ja) 2009-07-02
CN101896635B (zh) 2013-07-31
CN101896635A (zh) 2010-11-24

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