WO2009031304A1 - 固体撮像素子及びその製造方法 - Google Patents

固体撮像素子及びその製造方法 Download PDF

Info

Publication number
WO2009031304A1
WO2009031304A1 PCT/JP2008/002428 JP2008002428W WO2009031304A1 WO 2009031304 A1 WO2009031304 A1 WO 2009031304A1 JP 2008002428 W JP2008002428 W JP 2008002428W WO 2009031304 A1 WO2009031304 A1 WO 2009031304A1
Authority
WO
WIPO (PCT)
Prior art keywords
center
photodiode
photoelectric
photoelectric charges
short
Prior art date
Application number
PCT/JP2008/002428
Other languages
English (en)
French (fr)
Inventor
Shigetoshi Sugawa
Yasushi Kondo
Hideki Tominaga
Original Assignee
Tohoku University
Shimadzu Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku University, Shimadzu Corporation filed Critical Tohoku University
Priority to KR1020107003064A priority Critical patent/KR101105635B1/ko
Priority to EP08828900A priority patent/EP2192615A4/en
Priority to US12/676,520 priority patent/US8569805B2/en
Priority to CN2008801056134A priority patent/CN101796643B/zh
Priority to JP2009531126A priority patent/JP5115937B2/ja
Publication of WO2009031304A1 publication Critical patent/WO2009031304A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers

Abstract

　埋め込み型のフォトダイオード（３１）の受光面の略中央にフローティングディフュージョン（３３１）を形成し、それを取り囲むように転送トランジスタ（３２）のゲート電極を配置する。フォトダイオード（３１）のｐ＋型半導体領域、ｎ型半導体領域又はｐ型ウエル領域の不純物濃度（又は深さ）を周辺部から中央に向かって傾斜状に変化させることで、ｐｎ接合に適宜のバイアス電圧を印加したときに周辺から中央に向かって下傾するポテンシャル勾配が形成されるようにする。受光により発生した光電荷はポテンシャル勾配に従って迅速に中央に集積される。またフォトダイオード（３１）の周辺からフローティングディフュージョン（３３１）までの最大移動距離も短いので、光電荷蓄積時間が短い場合でも効率良く光電荷を収集することができる。このようにして、フォトダイオード（３１）で生起された光電荷を効率良く利用することで、検出感度が向上する。
PCT/JP2008/002428 2007-09-05 2008-09-04 固体撮像素子及びその製造方法 WO2009031304A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020107003064A KR101105635B1 (ko) 2007-09-05 2008-09-04 고체촬상소자 및 그 제조방법
EP08828900A EP2192615A4 (en) 2007-09-05 2008-09-04 SOLID-BODY IMAGING ELEMENT AND METHOD FOR THE PRODUCTION THEREOF
US12/676,520 US8569805B2 (en) 2007-09-05 2008-09-04 Solid-state image sensor and method for producing the same
CN2008801056134A CN101796643B (zh) 2007-09-05 2008-09-04 固体摄像元件及其制造方法
JP2009531126A JP5115937B2 (ja) 2007-09-05 2008-09-04 固体撮像素子及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007230181 2007-09-05
JP2007-230181 2007-09-05

Publications (1)

Publication Number Publication Date
WO2009031304A1 true WO2009031304A1 (ja) 2009-03-12

Family

ID=40428628

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002428 WO2009031304A1 (ja) 2007-09-05 2008-09-04 固体撮像素子及びその製造方法

Country Status (7)

Country Link
US (1) US8569805B2 (ja)
EP (1) EP2192615A4 (ja)
JP (1) JP5115937B2 (ja)
KR (1) KR101105635B1 (ja)
CN (1) CN101796643B (ja)
TW (1) TW200921907A (ja)
WO (1) WO2009031304A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011004708A1 (ja) 2009-07-10 2011-01-13 株式会社島津製作所 固体撮像素子
KR20110023763A (ko) * 2009-08-28 2011-03-08 소니 주식회사 고체 촬상 장치와 그 제조 방법, 및 전자기기
EP2416555A1 (en) * 2009-03-30 2012-02-08 Hamamatsu Photonics K.K. Solid-state image pickup device
BE1021245B1 (nl) * 2010-04-29 2015-09-22 Bart Dierickx Pixel met beperkte 1/f ruis
JPWO2020039531A1 (ja) * 2018-08-23 2021-08-26 国立大学法人東北大学 光センサ及びその信号読み出し方法並びに光エリアセンサ及びその信号読み出し方法
JP2021150846A (ja) * 2020-03-19 2021-09-27 株式会社東芝 固体撮像装置

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5643555B2 (ja) 2010-07-07 2014-12-17 キヤノン株式会社 固体撮像装置及び撮像システム
JP5885401B2 (ja) 2010-07-07 2016-03-15 キヤノン株式会社 固体撮像装置および撮像システム
JP5697371B2 (ja) * 2010-07-07 2015-04-08 キヤノン株式会社 固体撮像装置および撮像システム
JP5751766B2 (ja) 2010-07-07 2015-07-22 キヤノン株式会社 固体撮像装置および撮像システム
US20120261730A1 (en) * 2011-04-15 2012-10-18 Omnivision Technologies, Inc. Floating diffusion structure for an image sensor
FR2971622A1 (fr) * 2011-07-13 2012-08-17 Commissariat Energie Atomique Pixel de capteur d'image dote d'un noeud de lecture ayant un agencement ameliore
JP5959187B2 (ja) * 2011-12-02 2016-08-02 オリンパス株式会社 固体撮像装置、撮像装置、および信号読み出し方法
JP6141160B2 (ja) * 2013-09-25 2017-06-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子およびその動作方法、並びに電子機器およびその動作方法
EP3097685B1 (en) * 2014-01-24 2021-11-17 Université Catholique de Louvain Image sensor
TWI648986B (zh) * 2014-04-15 2019-01-21 日商新力股份有限公司 攝像元件、電子機器
CN106576147B (zh) * 2014-07-31 2021-02-19 索尼半导体解决方案公司 像素电路、半导体光检测装置和辐射计数装置
WO2018181582A1 (ja) * 2017-03-30 2018-10-04 株式会社ニコン 撮像素子、焦点調節装置、および撮像装置
US20210313358A1 (en) * 2018-08-20 2021-10-07 Ningbo Abax Sensing Co., Ltd. Photodiode and manufacturing method, sensor and sensing array
JP7005459B2 (ja) * 2018-09-13 2022-01-21 株式会社東芝 固体撮像素子
KR20210000600A (ko) 2019-06-25 2021-01-05 에스케이하이닉스 주식회사 이미지 센서
KR20210002880A (ko) 2019-07-01 2021-01-11 에스케이하이닉스 주식회사 픽셀 및 이를 포함하는 이미지 센서
KR20210012190A (ko) 2019-07-24 2021-02-03 에스케이하이닉스 주식회사 메모리 시스템 및 그것의 동작 방법
CN110676279A (zh) * 2019-10-10 2020-01-10 中国电子科技集团公司第四十四研究所 一种高量子效率ccd结构
KR20210114786A (ko) * 2020-03-11 2021-09-24 에스케이하이닉스 주식회사 이미지 센서

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001345441A (ja) 2000-03-28 2001-12-14 Hideki Muto 高速撮像素子及び高速撮影装置
JP2003218332A (ja) * 2002-01-22 2003-07-31 Sony Corp 固体撮像素子
JP2006245522A (ja) 2005-02-04 2006-09-14 Tohoku Univ 光センサ、固体撮像装置、および固体撮像装置の動作方法
JP2007073864A (ja) * 2005-09-09 2007-03-22 Seiko Epson Corp ラインセンサ及び画像情報読取装置
JP2007081083A (ja) * 2005-09-14 2007-03-29 Seiko Epson Corp ラインセンサ及び画像情報読取装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6977684B1 (en) * 1998-04-30 2005-12-20 Canon Kabushiki Kaisha Arrangement of circuits in pixels, each circuit shared by a plurality of pixels, in image sensing apparatus
US7176972B2 (en) * 2000-03-28 2007-02-13 Link Research Corporation Fast imaging device and fast photographing device
JP2004349430A (ja) 2003-05-21 2004-12-09 Sharp Corp 固体撮像素子とその駆動方法
US7145122B2 (en) * 2004-06-14 2006-12-05 Omnivision Technologies, Inc. Imaging sensor using asymmetric transfer transistor
CN101164334B (zh) * 2005-04-07 2010-12-15 国立大学法人东北大学 光传感器、固体摄像装置和固体摄像装置的动作方法
KR100638260B1 (ko) 2005-06-24 2006-10-25 한국과학기술원 씨모스 이미지 센서
KR100778854B1 (ko) 2005-12-29 2007-11-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
CN101796822A (zh) * 2007-09-05 2010-08-04 国立大学法人东北大学 固体摄像元件
CN101796821B (zh) * 2007-09-05 2012-12-12 国立大学法人东北大学 固体摄像元件和该固体摄像元件的驱动方法
KR101090149B1 (ko) * 2007-09-05 2011-12-06 가부시키가이샤 시마쓰세사쿠쇼 고체촬상소자 및 촬영장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001345441A (ja) 2000-03-28 2001-12-14 Hideki Muto 高速撮像素子及び高速撮影装置
JP2003218332A (ja) * 2002-01-22 2003-07-31 Sony Corp 固体撮像素子
JP2006245522A (ja) 2005-02-04 2006-09-14 Tohoku Univ 光センサ、固体撮像装置、および固体撮像装置の動作方法
JP2007073864A (ja) * 2005-09-09 2007-03-22 Seiko Epson Corp ラインセンサ及び画像情報読取装置
JP2007081083A (ja) * 2005-09-14 2007-03-29 Seiko Epson Corp ラインセンサ及び画像情報読取装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KONDO ET AL.: "Kousokudo Bideo Kamera Hyper Vision HPV-1 no Kaihatsu (Development of "HyperVision HPV-1" High-Speed Video Camera)", SHIMADZU HYOUROU (SHIMADZU REVIEW), vol. 62, no. 1/2, 30 September 2005 (2005-09-30), pages 79 - 86
See also references of EP2192615A4

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2416555A1 (en) * 2009-03-30 2012-02-08 Hamamatsu Photonics K.K. Solid-state image pickup device
EP2416555A4 (en) * 2009-03-30 2014-09-10 Hamamatsu Photonics Kk SOLID STATE IMAGE CRADLE
WO2011004708A1 (ja) 2009-07-10 2011-01-13 株式会社島津製作所 固体撮像素子
US8530947B2 (en) 2009-07-10 2013-09-10 Shimadzu Corporation Solid-state image sensor
KR20110023763A (ko) * 2009-08-28 2011-03-08 소니 주식회사 고체 촬상 장치와 그 제조 방법, 및 전자기기
JP2011049446A (ja) * 2009-08-28 2011-03-10 Sony Corp 固体撮像装置とその製造方法、及び電子機器
KR101683296B1 (ko) 2009-08-28 2016-12-20 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 장치와 그 제조 방법, 및 전자기기
BE1021245B1 (nl) * 2010-04-29 2015-09-22 Bart Dierickx Pixel met beperkte 1/f ruis
JPWO2020039531A1 (ja) * 2018-08-23 2021-08-26 国立大学法人東北大学 光センサ及びその信号読み出し方法並びに光エリアセンサ及びその信号読み出し方法
JP7333562B2 (ja) 2018-08-23 2023-08-25 国立大学法人東北大学 光センサ及びその信号読み出し方法並びに光エリアセンサ及びその信号読み出し方法
JP2021150846A (ja) * 2020-03-19 2021-09-27 株式会社東芝 固体撮像装置
JP7330124B2 (ja) 2020-03-19 2023-08-21 株式会社東芝 固体撮像装置

Also Published As

Publication number Publication date
KR101105635B1 (ko) 2012-01-18
EP2192615A4 (en) 2011-07-27
EP2192615A1 (en) 2010-06-02
JPWO2009031304A1 (ja) 2010-12-09
CN101796643B (zh) 2013-04-10
JP5115937B2 (ja) 2013-01-09
US8569805B2 (en) 2013-10-29
US20100176423A1 (en) 2010-07-15
CN101796643A (zh) 2010-08-04
TW200921907A (en) 2009-05-16
KR20100039885A (ko) 2010-04-16

Similar Documents

Publication Publication Date Title
WO2009031304A1 (ja) 固体撮像素子及びその製造方法
EP2816601B1 (en) Improvements in or relating to pinned photodiodes for use in image sensors
JP5295105B2 (ja) 低クロストークｐｍｏｓピクセル構造
JP6967755B2 (ja) 光検出器
CN103904092B (zh) 一种硅基cmos图像传感器提高电子转移效率的方法
KR100647959B1 (ko) 능동픽셀센서및그제조방법
US9806121B2 (en) Solid-state imaging device
KR100879013B1 (ko) 매립형 컬렉터를 구비하는 포토트랜지스터
RU2012118396A (ru) Твердотельное устройство захвата изображения
US6982183B2 (en) Method and system for manufacturing a pixel image sensor
JP2005142503A5 (ja)
CN104517983B (zh) 固态成像装置、其制造方法和成像系统
TW200640004A (en) Solid-state imaging device and method for manufacturing the same
US10312391B2 (en) Apparatus and method for single-photon avalanche-photodiode detectors with reduced dark count rate
JP2011082426A5 (ja)
RU2012118747A (ru) Твердотельное устройство захвата изображения и способ его производства
WO2008133144A1 (ja) 固体撮像装置
TW200627634A (en) Solid-state imaging device and manufacturing method thereof
JP6481898B2 (ja) ソーラーセルの機能を持つイメージセンサー
CN100474601C (zh) 适用于cmos图像传感器的低暗电流有源像素及其制造方法
CN103915457A (zh) 一种硅基cmos图像传感器及其抑制光生载流子表面陷阱复合的方法
De Munck et al. Backside illuminated hybrid FPA achieving low cross-talk combined with high QE
US20220254822A1 (en) Uttb photodetector pixel unit, array and method
TWI446564B (zh) 光敏組件
Sun et al. A flexible 32x32 SPAD image sensor with integrated microlenses

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880105613.4

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08828900

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009531126

Country of ref document: JP

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 20107003064

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 12676520

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

REEP Request for entry into the european phase

Ref document number: 2008828900

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2008828900

Country of ref document: EP